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High-frequency amplifier and high-frequency mixer

A high-frequency amplifier and high-frequency signal technology, applied in the direction of high-frequency amplifiers, amplifiers, differential amplifiers, etc., can solve the problems of noise index degradation, base bias compensation circuit impedance reduction, etc., to suppress the degradation of noise index, reduce Current consumption, effect of increasing impedance

Inactive Publication Date: 2003-02-12
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0018] In the above-mentioned conventional high-frequency amplifier, when a high-power high-frequency signal is input, the base bias compensation circuit increases the amount of current supplied to the base terminal of the bipolar transistor 103, thereby alleviating the drop in base potential. And improve the saturation characteristics, but because the impedance of the base bias compensation circuit decreases with the increase of the current supply, it leads to the problem of deterioration of the noise figure

Method used

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  • High-frequency amplifier and high-frequency mixer

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Embodiment 1

[0094] image 3 It is a circuit diagram of the high-frequency amplifier of Embodiment 1 of the present invention. In the figure, 1 is the input terminal of the high-frequency signal, 2 is the output terminal of the high-frequency signal, 3 is the bipolar transistor for amplification, 4 is the constant voltage source, 5 is the constant current source, and 6 is used to switch the constant voltage source 4b and the switching switch of the constant current source 5.

[0095] The structure is described below.

[0096] According to the high-frequency amplifier of Embodiment 1, the emitter is grounded and the amplifying bipolar transistor 3 is used, corresponding to the power level of the high-frequency signal input to the amplifying bipolar transistor 3 or the power level of the output high-frequency signal, The constant current source 5 and the constant voltage source 4 b are respectively switched to apply a DC bias to the base terminal of the bipolar transistor 3 for amplificati...

Embodiment 2

[0101] Figure 4 is a circuit diagram of a high-frequency amplifier according to Embodiment 2 of the present invention. In the figure, 1 is the input terminal of the high-frequency signal, 2 is the output terminal of the high-frequency signal, 3 is the bipolar transistor for amplification, 4 is the constant voltage source, 5 is the constant current source, and 6 is used to switch the constant voltage source 4b and the switching switch of the constant current source 5.

[0102] The structure is described below.

[0103] According to the high-frequency amplifier of Embodiment 2, the emitter is grounded and the amplifying bipolar transistor 3 is used, corresponding to the power level of the high-frequency signal input to the amplifying bipolar transistor 3 or the power level of the output high-frequency signal, The constant current source 5 and the constant voltage source 4b are respectively switched to apply a DC bias to the base terminal of the amplifying bipolar transistor 3...

Embodiment 3

[0108] Figure 5 is a circuit diagram of a high-frequency amplifier according to Embodiment 3 of the present invention. In the figure, 1 is the input terminal of the high-frequency signal, 2 is the output terminal of the high-frequency signal, 3 is the bipolar transistor for amplification, 4 is the constant voltage source, 5 is the constant current source, and 6 is used to switch the constant voltage source 4b and the switching switch of the constant current source 5, 7 is a bias resistor.

[0109] The structure is described below.

[0110] According to the high-frequency amplifier of the third embodiment, the emitter is grounded and the amplifying bipolar transistor 3 is used, corresponding to the power level of the high-frequency signal input to the amplifying bipolar transistor 3 or the power level of the output high-frequency signal, Switch to the constant current source 5 and the constant voltage source 4b respectively to apply a DC bias to the base terminal of the bipo...

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Abstract

A high frequency amplifier in which a common emitter bipolar transistor is used, and in that a constant current source and a constant voltage source are switched to apply a DC bias to a base terminal of the bipolar transistor in accordance with a power level of a high frequency signal input to the bipolar transistor or a power level of a high frequency signal output therefrom, and a frequency mixer in that a DC bias is applied to a base of at least one of a bipolar transistor for the input of a high frequency signal and a bipolar transistor for the input of a local oscillation wave by using a configuration for applying the DC bias to a base of an amplifying bipolar transistor employed in the high frequency amplifier.

Description

technical field [0001] The present invention relates to a high-frequency amplifier capable of obtaining high saturation characteristics by alleviating the drop in base potential of a bipolar transistor when a high-power high-frequency signal is input. [0002] In addition, the present invention relates to a high-frequency amplifier and a mixer capable of reducing the degradation of the noise figure while obtaining high saturation characteristics by alleviating the drop in the base potential of the bipolar transistor when a high-power high-frequency signal is input. device. Background technique [0003] For example, the conventional emitter-grounded bipolar type high-frequency amplifier described in the initial review report of IEEE Microwave Theory and Technology Symposium (1997) supplies the base terminal of the bipolar transistor with a DC bias generated from a current mirror circuit, such as figure 1 shown. [0004] In the figure, 1 is the input terminal of the high-fre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03D7/14H03F1/02H03F1/30H03F1/32H03F3/19H03F3/45H03F3/72
CPCH03F3/45089H03D7/1491H03D2200/0043H03F3/72H03F2200/301H03D7/1433H03F2200/54H03D2200/0033H03F1/302H03F2200/492H03D7/1458H03F3/19H03D7/1408H03F2203/7206H03F2200/249
Inventor 谷口英司末松宪治泽海千惠美前田宪一生岛贵之上马弘敬高木直
Owner MITSUBISHI ELECTRIC CORP
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