1785results about "Amplifier modifications to reduce temperature/voltage variation" patented technology

The invention relates to the technical field of wireless communication, and provides a radio frequency power amplifier and a radio frequency chip, the radio frequency power amplifier comprises an input matching circuit, a first-stage amplifier, a first inter-stage matching circuit, a second-stage amplifier, a second inter-stage matching circuit, a third-stage amplifier and an output matching circuit which are electrically connected in sequence; the radio frequency power amplifier further comprises a control module, a direct current power supply module, a first bias circuit, a second bias circuit and a third bias circuit. The first biasing circuit comprises a power detection network and a switch control circuit; the first input end of the power detection network serves as the first input end of the first bias circuit, the second input end of the power detection network serves as the second input end of the first bias circuit, and the power detection network is used for receiving a radio frequency signal, converting the radio frequency signal into a control voltage in a detection mode and outputting the control voltage to the input end of the switch control circuit. The control switch controls connection or disconnection of the circuit. According to the invention, the robustness of power can be improved.

The invention discloses a slew rate enhancement circuit of an operational amplifier, which comprises a comparison module used for comparing a positive input voltage and a negative input voltage of the operational amplifier and generating a first comparison signal and a second comparison signal according to a comparison result; the slew rate enhancing module is used for enhancing the slew rate of the falling edge of the output voltage of the operational amplifier according to the first comparison signal and enhancing the slew rate of the rising edge of the output voltage of the operational amplifier according to the second comparison signal; the common-mode feedback module is used for clamping the common-mode voltage of the first comparison signal and the common-mode voltage of the second comparison signal to a reference voltage when the operational amplifier is in a steady state, so that the slew rate enhancing module is in a closed state; therefore, the slew rate of the output voltage of the operational amplifier can be quickly enhanced when the operational amplifier has large step signal output, so that the output of the operational amplifier is quickly responded and established.

The embodiment of the invention provides a cascode amplifier, a power supply and a server. The cascode amplifier comprises a substrate, a GaN transistor and an S transistor. The substrate comprises a plate, a control pin, a first pole pin and a second pole pin. The GaN transistor is arranged on the plate, the GaN transistor comprises a first electrode, a second electrode and a control electrode, the GaN transistor comprises a first surface, the first surface deviates from the plate, the first electrode, the second electrode and the control electrode of the GaN transistor are arranged on the first surface, and the first electrode of the GaN transistor is connected to the first electrode pin. The S transistor comprises a first electrode, a second electrode and a control electrode; the first electrode of the S transistor is connected to the second electrode of the GaN transistor, and the second electrode of the S transistor is connected to the control electrode and the second electrode pin of the GaN transistor. The control electrode of the S transistor comprises a plurality of first connection points, and the control electrode of the S transistor is connected to the control pin through the plurality of first connection points.

An oscillator (1) according to the present disclosure generates output power, and provides a microwave that is in accordance with the output power as an output wave. The oscillator (1) includes a signal generator (10), a power amplifier (20), and a temperature sensor (40). The signal generator (10) generates an oscillation signal. The power amplifier (20) includes a final stage device (22), and amplifies the oscillation signal to generate the output power. The temperature sensor (40) detects a temperature of the final stage device (22). The final stage device (22) is packaged. The temperature sensor (40) is disposed in a package (200) that includes the final stage device (22).

The invention provides a correlated double-sampling program-controlled gain amplifier for a high-energy particle detection pixel sensor and an implementation method, and solves the technical problem that a large dynamic range and high readout precision cannot be considered at the same time during existing high-energy particle detection. The circuit comprises a correlated double-sampling circuit, a signal polarity conversion circuit, an amplification feedback circuit and a configuration automatic judgment circuit. The correlated double sampling circuit is used for performing double sampling on the output voltage of the pixel signal to obtain twice sampling voltage; the configuration automatic judgment circuit is used for selecting configurations for switching according to the voltage difference between the two sampling voltages to obtain an output signal; and the amplification feedback circuit is used for performing fixed gain voltage amplification on the output signal to obtain an amplified voltage signal. The circuit can be widely applied to the technical field of integrated circuits.

A power amplifying circuit includes an output transistor that amplifies a radio frequency signal and outputs an amplified signal, a bias circuit that supplies a bias current or voltage to the output transistor, and a bias control part connected to the bias circuit and includes a control circuit that increases the bias current or voltage when an ambient temperature is equal to or less than a predetermined value. In consecutive time periods of a first, a second, and a third time period, when output of the output transistor in the third time period is greater than output of the output transistor in the first and the second time period, the bias control part increases the bias current or voltage in the second time period as to become higher than the bias current or voltage of a case where the ambient temperature is higher than the predetermined threshold value.

Aspects of gate voltage level shifting circuits are described. An example power amplifier includes a depletion mode power transistor and a level shift circuit. The level shift circuit is configured to generate a level-shifted gate bias control signal for the depletion mode power transistor based on a gate bias control signal. Among other benefits, the level shift circuit facilitates the replacement of the power transistor in a power amplifier system, particularly in cases where the gate bias control levels generated by the amplifier system are insufficient to completely pinch-off the depletion mode power transistor.

The invention discloses a low-voltage gallium nitride power amplifier based on second harmonic suppression. The low-voltage gallium nitride power amplifier is used for solving the technical problem that the overall efficiency of a radio frequency system is low due to an existing radio frequency power amplifier. The amplifier comprises an input stage circuit, an input stage low-voltage gallium nitride transistor, an intermediate stage circuit, an intermediate stage low-voltage gallium nitride transistor, an output stage circuit, an output stage low-voltage gallium nitride transistor group, a drain bias capacitor, a drain bias voltage port and a secondary harmonic suppression output matching network, by arranging an input-stage low-voltage gallium nitride transistor, an intermediate-stage low-voltage gallium nitride transistor, an output-stage low-voltage gallium nitride transistor group, a secondary harmonic suppression output matching network and a corresponding connection relationship, the secondary harmonic suppression output matching network can be used for suppressing a low-voltage gallium nitride transistor on the basis of a low-voltage gallium nitride process technology. Harmonic suppression is directly carried out on the second harmonic, so that the output power and the power additional efficiency of the radio frequency power amplifier are improved, and the overall efficiency of a radio frequency system is improved.

An integrated circuit for a switching power supply circuit has an enable pin, a power supply pin, a switch pin, a ground pin, a power switch and an amplifier. The enable pin receives an enable signal. The power supply pin is coupled to a power supply capacitor. The switch pin receives an input voltage. The power switch has a normally-on switching device and a normally-off switching device. A first terminal of the normally-on switching device is coupled to the switch pin. A first terminal of the normally-off switching device is coupled to a second terminal of the normally-on switching device, a second terminal of the normally-off switching device is coupled to the ground pin. The amplifier provides an amplified signal based on a difference between a voltage at the power supply pin and a voltage at the second terminal of the normally-on switching device to control the normally-on switching device.

The invention discloses an ultra-wideband low-noise amplifier based on a double-coupling structure, relates to the field of electronic devices, and is used for solving the problems of large occupied area and large noise coefficient of a distributed amplifier in the prior art. Comprising a broadband input matching network acting on a first-stage circuit, a transconductance enhancement coupling structure and an active bias structure; the parallel RC negative feedback structure and the series-parallel coupling inductance peaking structure act on the second-stage circuit; the transconductance enhancement coupling structure at least comprises a first transistor, a first microstrip line connected with a source electrode of the first transistor and a second microstrip line connected with a drain electrode of the first transistor, and the first microstrip line and the second microstrip line are mutually coupled. Part of drain electrode current signals are coupled to the source electrode to be secondarily amplified, the high-frequency gain of the first-stage circuit is effectively improved, post-stage noise can be restrained, meanwhile, minimum noise matching under high frequency is carried out through the source electrode degeneration inductor and the broadband input matching network, and the noise performance is excellent; and the area can be saved.

The invention discloses a low-power-consumption low-noise amplification circuit with temperature compensation, and belongs to the field of radio frequency amplifiers, the amplification circuit comprises a temperature compensation bias module and an amplifier main body unit, the temperature compensation bias module comprises first to third enhancement mode transistors and first to eighth resistors, the amplifier main body unit comprises an input matching circuit, a fourth enhanced transistor, an inter-stage matching circuit, a fifth enhanced transistor, a sixth enhanced transistor and an output matching circuit; the temperature compensation bias module outputs a first bias voltage applied to the grid electrode of the fourth enhancement mode transistor, outputs a second bias voltage applied to the grid electrode of the fifth enhancement mode transistor and outputs a third bias voltage applied to the grid electrode of the sixth enhancement mode transistor, and the input end of the input matching circuit receives a radio frequency signal. And the output end of the output matching circuit outputs the amplified radio frequency signal. The low-noise amplifier can solve the problem that the gain of the low-noise amplifier is greatly changed due to the influence of temperature under the condition of low power consumption.

The invention discloses an open-circuit compensation type bias circuit, which belongs to the technical field of solid-state microwave power amplifiers and comprises a bias line, an open-circuit compensation line, a first transmission line and a second transmission line. One end of the first transmission line, one end of the open circuit compensation line, one end of the bias line and one end of the second transmission line are connected; the other end of the first transmission line is a first microwave port, the other end of the open circuit compensation line is suspended, the other end of the bias line is a power port, and the other end of the second transmission line is a second microwave port; the physical length of the bias line and the physical length of the open-circuit compensation line meet the relational expression that the sum of the physical length of the bias line and the physical length of the open-circuit compensation line is equal to the sum of four of the central wavelength of the working frequency band of the power amplifier. Through the combination of the transmission line, the compensation line and the bias line, the parasitic inductance of the bias circuit is reduced, and compared with an existing bias circuit, the parasitic inductance is reduced by more than 1 / 4.

Technologies are provided to calculate a logarithm of an input current to a logarithmic transimpedance amplifier device at a particular temperature. The logarithm of the current is calculated in digital domain based on sampling of analog signals that are internal to the logarithmic transimpedance amplifier device. The sampling can be performed, in some cases, by an analog-to-digital converter device integrated into the logarithmic transimpedance amplifier device. The calculation in digital domain is performed by one or more processor external to the logarithmic transimpedance amplifier device. The calculation includes a determination of a temperature compensation factor based on an internal analog signal indicative of temperature of the logarithmic transimpedance amplifier device. The temperature compensation factor permits removing temperature dependence from a logarithmic output voltage originating from the input current. Operating in the digital domain permits applying corrections that account for residual leakage current and an emitter-resistance correction at high input currents.

The invention discloses a high-speed and high-linearity margin amplifier and an analog-to-digital converter, belongs to the technical field of integrated circuits, and solves the technical problem that an existing source follower cannot meet high-speed and high-linearity indexes. The amplifier comprises a margin amplifier bias and output module, a phase inverter and a linear transconductance unit based on an AB-class super source follower structure, wherein the bias and output module, the linear transconductance unit and the phase inverter are connected in sequence. The linear transconductance unit can generate high-linearity transconductance, so that the linearity of the whole margin amplifier is improved, the symmetry of the positive output end and the negative output end of the margin amplifier under the condition of high-frequency or large-swing input can be ensured, and the high-speed and high-linearity index can be effectively met. In addition, a gain calibration module resistant to temperature and process changes is further introduced, and the influence caused by follow-up system environment temperature changes can be automatically compensated.

The invention relates to a rail-to-rail input bias circuit which is used for providing bias voltage for an input stage of a rail-to-rail input operational amplifier. The circuit comprises a detection module and a bias module. The detection module is used for generating a selection control signal according to the differential input amplitude and outputting the selection control signal to the bias module; the differential input amplitude is a voltage difference value between an external input signal and an output signal of the rail-to-rail input operational amplifier; the bias module is used for responding to a selection control signal to control input of an external input signal or a common-mode input signal and transmitting a generated bias voltage to an input stage of the rail-to-rail input operational amplifier; wherein when the differential input amplitude is greater than a detection threshold value, the bias module inputs a common-mode input signal; when the differential input amplitude is smaller than or equal to a detection threshold value, the bias module inputs an external input signal; according to the rail-to-rail input biasing circuit, the influence of offset ripples at the output end on the biasing current can be avoided, and the common-mode rejection ratio of a rail-to-rail input operational amplifier is increased.

The invention discloses an amplifying circuit for improving a common-mode rejection ratio, relates to the field of sensor analog front-end circuits, and aims to improve the common-mode rejection ratio of a circuit system by suppressing common-mode signal change and differential-mode signals caused by the common-mode signal change. A capacitive coupling structure and a chopping stabilizing circuit are combined, so that the problems of an instrument amplifier with a three-operational-amplifier structure are solved, firstly, the amplifier drives a passive network, and the power consumption is reduced; secondly, the AC capacitor is connected in series to isolate a common-mode signal, so that the CMRR of the circuit is improved; thirdly, the chopping stabilizing circuit modulates the offset voltage and the common-mode signal change voltage to high frequency, the offset voltage and the common-mode signal change voltage are filtered by a filter, the circuit gain is improved, and meanwhile, the CMRR is also improved; and fourthly, the problems of residual offset and output ripple caused by the chopper circuit are reduced through the DSL and the RRL, so that saturation of a post-stage circuit is avoided.

The invention discloses a K-band amplitude-limiting low-noise amplifier, and belongs to the technical field of radio frequency microelectronics. The circuit comprises an input matching module, a diode amplitude limiting module, an inter-stage matching module, a low-noise amplification module and an output matching module which are cascaded in sequence, the input matching module is used for realizing impedance matching between a radio frequency signal input end and the diode amplitude limiting module and transmitting a radio frequency signal; the diode amplitude limiting module is used for limiting the amplitude of the radio frequency signal and transmitting the radio frequency signal; the inter-stage matching module is used for realizing impedance matching between the diode amplitude limiting module and the low-noise amplification module; the low-noise amplification module is used for carrying out amplification processing on the radio frequency signal after amplitude limiting and transmitting the radio frequency signal; and the output matching module is used for realizing impedance matching between the low-noise amplification module and the radio frequency signal output end and outputting the amplified radio frequency signal. According to the invention, the amplitude of the input signal can be limited, so that the amplitude is kept in a bearable range of the low-noise amplification circuit, and the stability and reliability of the whole system are ensured.

In accordance with an embodiment, a nested floating inverter dynamic amplifier (FIDA) includes: a first FIDA amplifier comprising a plurality of first inverters switchably coupled to a first reservoir capacitor; and a second FIDA amplifier comprising a plurality of second inverters switchably coupled to a second reservoir capacitor, wherein outputs of the plurality of first inverters are coupled to corresponding inputs of the plurality of second inverters.

According to the operational amplifier with the low offset voltage and the electronic equipment, on one hand, the offset voltage existing in the first operational amplifier unit and the offset voltage existing in the second operational amplifier unit are stored and accurately offset through the first offset voltage elimination unit and the second offset voltage elimination unit respectively; the first output current unit and the second output current unit generate first output current and second output current errors respectively due to the offset voltage. And on the other hand, the first operational amplifier module and the second operational amplifier module are controlled to be alternately in different working stages by controlling the on-off of the switch, so that the input end of the operational amplifier module in a normal working state in each clock period is ensured to have extremely low offset voltage, and the offset voltage elimination continuity is ensured.

The present invention provides a broadband harmonic suppression power amplifier containing a resistive filter, and relates to the technical field of power amplifiers. The present invention effectively solves the power supply compatibility problem between BJT power units and GaN power units through innovative single-power intelligent reconstruction technology. Ensure that the negative gate voltage required by the GaN power unit is established first and intelligently triggers the drain power supply, reducing the risk of device damage caused by bias disorder. The built-in resistive filter network and cascade control design can adaptively suppress high-frequency harmonic interference, improve signal purity and system electromagnetic compatibility. Through modular circuit integration, while retaining the original power supply interface and heat dissipation structure, the seamless upgrade from BJT to GaN architecture is achieved, reducing the cost and cycle of hardware transformation. Supporting seamless switching of dual-mode power units, the operating frequency range of old equipment is expanded and the output power is enhanced without the need for overall reconstruction, while reducing overall energy consumption.

The invention discloses a gain boosting type floating anti-phase dynamic amplifier circuit, and relates to the technical field of integrated circuits, the gain boosting type floating anti-phase dynamic amplifier circuit comprises a power supply, a main amplifier, a first auxiliary amplifier and a second auxiliary amplifier, and the main amplifier and the auxiliary amplifiers both adopt a cascode floating anti-phase dynamic amplifier structure; the main amplifier comprises a first power supply capacitor, a second power supply capacitor, a plurality of first common-source transistors and a plurality of first common-gate transistors; a plurality of drain electrodes of the plurality of first common-source transistors are respectively connected with the input ends of the first auxiliary amplifier and the second auxiliary amplifier, and a plurality of grid electrodes of the first common-gate transistors are respectively connected with the output ends of the first auxiliary amplifier and the second auxiliary amplifier; the first auxiliary amplifier and the second auxiliary amplifier each comprise a plurality of second common-gate transistors, and a plurality of gates of the second common-gate transistors are directly connected to the common-mode level. According to the amplifier circuit, the gain of the amplifier is improved on the premise that the speed and the stability are guaranteed.

The invention discloses a self-stabilization zero operational amplifier circuit free from input imbalance and common mode influence, relates to the technical field of integrated circuits, and is applied to a high-precision operational amplifier. The operational amplifier is a three-stage operational amplifier and mainly comprises a single auxiliary input end zeroing amplifier, a main amplifier and an output stage. After a zero setting auxiliary input end of a traditional zero setting amplifier is changed into single-end input from differential input and a zero setting input stage is subjected to multi-stage design, an offset voltage of 3.8 microvolts, a low-frequency gain of 189dB and a gain bandwidth product of 8.6 MHz are realized under power consumption of 400 microamperes, the phase margin of the operational amplifier is 78 degrees under unit gain, and the stability requirement is met. Compared with a traditional structure, the low-residual-offset operational amplifier has the advantages that lower residual offset and larger operational amplifier bandwidth are achieved, and the application range is wider.

An SIP module integrated direct wave amplifier comprises a power supply control module, an X-band down-conversion module and an L-band down-conversion module, the power supply control module provides attenuation control signals and a low-ripple power supply for the X-band down-conversion module and the L-band down-conversion module, the X-band down-conversion module performs primary frequency conversion on externally received radio frequency signals, and the L-band down-conversion module performs secondary frequency conversion on the externally received radio frequency signals. The L-band down-conversion module performs secondary frequency conversion on the radio frequency signal subjected to primary frequency conversion by the X-band down-conversion module, the two down-conversion modules are arranged to realize structure modularization and standardization by adopting a SiP modularization mode, and each module is independent in function, so that the structure is simple, the cost is low, and the cost is low. Meanwhile, the serial-parallel conversion chip control circuit is adopted to control the numerical control attenuator to meet the requirements for high gain and large dynamic range of the direct wave amplifier, the architecture and the number of control circuits are simplified, and the circuit is easy to build, easy to use, convenient to integrate and high in selection flexibility.

The utility model provides a CP sampling circuit of an automobile alternating current charging pile, and relates to the technical field of CP sampling circuits, the technical scheme provided by the utility model adopts a double-path sampling design, CP signals in two forms of PWM and DC can be processed at the same time, and the signal processing precision is improved through multi-stage amplification and filtering. The overall structure of the circuit enables the circuit to quickly respond to the voltage change of the CP signal in different charging stages and accurately identify different voltage levels, so that the sampling speed and accuracy of the automobile AC charging pile to the CP signal can be improved.

An amplifier circuit includes a first input stage with a differential input transistor pair and a second gain stage having an output node coupled to a load. A node in the first gain stage is coupled to the output node in the second gain stage. A feedback line couples the output node to the control node of a first transistor of the differential input transistor pair. Current mirror circuitry is coupled to a current flow path through a further transistor in the second gain stage and includes a sensing node configured to produce a sensing signal indicative of the current supplied to the load. The sensing signal at the sensing node is directly fed back to the control node of the first transistor of the differential input transistor pair to provide a zero in the loop transfer function that is matched to and tracks and cancels out a load-dependent pole.

The utility model discloses a power amplifier circuit and electronic equipment. The power amplifier circuit comprises a power supply module; the power supply end of the power amplification module is connected with the power supply module, and the output end is connected with an external loudspeaker; the signal detection module is connected with the output end of the power amplification module and the power supply module; wherein the signal detection module is configured to detect an audio signal of the output end of the power amplification module, and the power supply module is configured to provide a first voltage signal for the power amplification module when the signal detection module does not detect the audio signal and provide a second voltage signal for the power amplification module when the signal detection module detects the audio signal. A second voltage signal is provided for the power amplification module, and the voltage value of the second voltage signal is larger than that of the first voltage signal. Through the mode, the power supply voltage can be reduced when the power amplification module has no audio output, the circuit energy consumption is reduced, the heating is reduced, and the service life of the power amplifier is further prolonged.

The utility model provides a kind of electrostatic discharge protection circuit and low noise amplification module, the electrostatic discharge protection circuit is applied to low noise amplification circuit, the low noise amplification circuit includes input matching circuit and the low noise amplifier of the output end being connected to the input matching circuit;The electrostatic discharge protection circuit includes inductance and resistance;The first end of the inductance is used to connect to the signal input end of low noise amplifier;The first end of the resistance is connected to the second end of the inductance, and the second end of the resistance is grounded.The electrostatic discharge protection circuit in the utility model is connected to the input end of low noise amplifier, and the noise coefficient of low noise amplifier will not be deteriorated, and the performance of low noise amplifier will not be affected, and the input stability of low noise amplifier will not be affected simultaneously.

A logarithmic detector based on input frequency dynamic compensation comprises a logarithmic amplifier for receiving a radio frequency signal, performing logarithmic conversion and outputting a first current; the frequency discriminator determines first frequency information according to a radio frequency signal, and the first frequency information indicates a first frequency of the radio frequency signal; the control module is used for generating a first control signal and a second control signal based on the first frequency information; wherein the first control signal is used for controlling the magnitude of the second current; the second control signal is used for controlling the magnitude of the third current; the temperature compensation circuit comprises a first transistor with a temperature coefficient and a current adjusting circuit; the first transistor is used for generating a second current changing along with the temperature; the current adjusting circuit adjusts the magnitude of the second current based on the first control signal; and the intercept compensation circuit outputs a corresponding third current based on the second control signal.

The invention discloses a gain temperature compensation method and circuit for a Ku-band amplifier, and belongs to the technical field of semiconductor integrated circuits. A Ku wave band power amplifier is formed on the basis of a pHEMT amplification device. A grid temperature compensation bias network is adopted for grid bias of the pHEMT amplifier, and the gain of the amplifier is controlled to fluctuate along with the temperature. According to the fluctuation condition of the gain of the pHEMT amplifier along with the temperature, the resistance value of a temperature compensation resistor in the grid bias network is determined, and the grid bias voltage is divided through the grid temperature compensation resistor. As the resistance value of the thermistor changes along with the temperature, the direct-current voltage output by the grid bias network correspondingly changes along with the temperature, so that the gain is controlled. The problem that the gain of an existing PHEMT technology-based Ku band amplifier changes greatly along with the temperature change is solved, and the situation that the gain of the amplifier is out of tolerance along with the temperature change is avoided. The technical scheme provided by the invention is widely applied to various Ku wave band power amplifiers.

The invention provides a transmitter and a gain temperature compensation circuit thereof, and the output end of a temperature detection circuit is connected with the control end of a variable resistance circuit. The variable resistance circuit is connected in parallel with the input end of a power amplifier in the transmitter; the temperature detection circuit outputs a control signal to the variable resistance circuit according to the detected temperature and adjusts the resistance value of the variable resistance circuit; by introducing the variable resistance circuit and the temperature detection circuit and dynamically adjusting the resistance value according to the temperature change, the adjustment of the load in the transmitter can be effectively realized, so that the gain is kept relatively constant under different temperature conditions, and the design not only improves the stability and reliability of the circuit, but also improves the reliability of the circuit. And the performance of the circuit under different environmental conditions is optimized, the power consumption of the transmitter is reduced, the working point of a transistor in the transmitter is not influenced, and the performance of the transmitter is relatively stable.