491results about "Amplifier modifications to reduce temperature/voltage variation" patented technology

The invention provides a control system for suppressing peak of output voltage and current of a power amplifier. The system comprises a PS signal processing module, a PL signal processing module and a high-voltage power circuit, wherein the PS is configured to receive a bus signal issued by an upper computer, execute digital Gaussian filtering processing on the bus signal and then transmit the bus signal to the PL signal processing module; meanwhile, relevant data of the power amplifier are collected and uploaded; the PL signal processing module is configured to receive a signal which is issued by the PS and is subjected to digital Gaussian filtering processing, and pre-process the signal; and transmitting the processed signal to a high-voltage power circuit to control the high-voltage power circuit to execute power conversion operation on the load. According to the method provided by the invention, smooth transition is realized at the phase jump position of the signal by adjusting the parameters of the digital Gaussian filter, so that the peak of the output voltage and current of the power amplifier is inhibited, the stress of a post-stage high-voltage power circuit device is reduced, the post-stage output power is effectively improved, and the stability of the power amplifier is improved.

The invention provides a broadband high-efficiency filtering power amplifier and an output matching network design method thereof, and belongs to the technical field of wireless communication. The broadband high-efficiency filtering power amplifier comprises a power amplifier main body and an output matching network connected with the output end of the power amplifier main body; the output matching network structure is based on a three-mode transverse coupling filter; the output matching network comprises a plurality of transmission lines which are directly connected to form a first sub-network, a second sub-network, a third sub-network and a fourth sub-network; the structures of the first and second sub-networks are configured to be equivalent to a [lambda] / 4 transmission line having a harmonic impedance control function. Fundamental wave matching, harmonic control and filtering functions are integrated by adopting an output matching network structure: fundamental wave matching with a steep edge is realized by utilizing a three-mode transverse resonator, secondary harmonic impedance is controlled to a high-efficiency area by adopting an equivalent T-shaped lambda / 4 line, and while wide-bandwidth work is realized, the harmonic control and filtering functions are realized. And high efficiency and excellent harmonic suppression capability are realized.

The utility model discloses a high-power microwave solid-state source module, which comprises an adjustable signal source, an analog electrically controlled attenuation control circuit, a radio frequency switch, a gain power amplifier module, a power divider, a multi-stage power amplifier circuit, a combiner, a power detection circuit and a main control circuit, the input end of the adjustable signal source is connected with an input power supply, and the output end of the adjustable signal source is sequentially connected with the analog electrically-controlled attenuation control circuit, the radio frequency switch, the gain power amplifier module, the power divider, the multi-stage power amplifier circuit and the combiner; the power detection circuit is in coupling connection with the output end of the combiner; the main control circuit is connected with the control end of the adjustable signal source, the control end of the analog electrically controlled attenuation control circuit, the control end of the radio frequency switch, the control end of the gain power amplifier module, the control end of the multi-stage power amplifier circuit and the output end of the power detection circuit. According to the utility model, the problems of low efficiency and inconvenient and unstable frequency and power adjustment of the existing microwave solid-state source are effectively solved.

The invention is suitable for the technical field of power electronics, and provides an intelligent management method and system for a power amplifier, and the method comprises the steps: obtaining the output voltage and current of the power amplifier, and determining the real-time load impedance; predicting the junction temperature of the power amplifier according to a coupling thermal model associating the effective thermal resistance with the load mismatch degree; based on the predicted junction temperature and real-time load impedance, stability compensation parameters for maintaining operational stability and pre-distortion parameters for compensating for non-linear distortion are cooperatively determined and adjusted. Through cooperative intelligent management, safety and reliability can be improved, performance maximization is realized, and high fidelity of all working conditions is ensured.

The invention discloses a single-power-supply ultra-wideband temperature compensation low-noise amplifier circuit, and belongs to the technical field of radio frequency microwaves. The circuit is mainly composed of a pre-stage low-noise amplifier module, an inter-stage temperature compensation equalization module and a post-stage driving amplifier module. The temperature compensation equalizer module generates differential voltage related to temperature through a three-stage gallium arsenide diode temperature sensing unit, outputs a control signal through an enhanced FET differential amplification circuit, drives a voltage-controlled attenuation equalizer to dynamically adjust the attenuation amount of a radio frequency signal, and achieves gain stability in a frequency band. Through the collaborative design of a blocking capacitor and a divider resistor, the grid bias of an FET switch is strictly limited in a transconductance linear adjustment interval, and the interval covers 80% of the effective range of the threshold voltage of a gallium arsenide FET tube. The circuit is powered by a single power supply + 5V, stable work of each module is ensured through active bias and a power supply filter network, and the circuit is suitable for extreme temperature environments such as high-frequency communication and radar.

The invention discloses a wide dynamic underwater sound acquisition method suitable for an underwater glider and a hydrophone, and the method comprises the steps: configuring a unique hydrophone into four parallel band-pass filtering and amplifying circuits, each band-pass filtering and amplifying circuit having different acquisition frequency bands; after the underwater glider enters water, underwater sound collection is carried out based on the only installed hydrophone, and underwater sound signals of four collection frequency bands are collected at the same time through four parallel band-pass filtering and amplifying circuits. Through four paths of differentiated gains and frequency segmentation, the wide dynamic full frequency band can be covered, the dynamic range is improved, a single hydrophone integrates four channels, cables and installation space among multiple devices are saved, and the underwater glider compact layout is adapted; the channels are activated on demand, the total power consumption can be reduced, and the endurance time is prolonged. Under the conditions of low power consumption and limited volume of the underwater glider, wide dynamic range signal acquisition can be realized, and signals can be processed in real time.

The invention discloses a temperature compensation circuit, a power amplifier and a radio frequency front-end module. The temperature compensation circuit comprises a temperature compensation module, a current source module and a control module. The temperature compensation module is used for outputting a first temperature compensation voltage under the condition that the environment temperature is smaller than or equal to a first temperature threshold value; the current source module is connected between the temperature compensation module and the output port and is used for converting the temperature compensation voltage output by the temperature compensation module into control current; the current source module is provided with at least two current adjusting gears, and the control module is connected with the current source module. When the first temperature compensation voltage output by the temperature compensation module is in positive correlation with the environment temperature, and the environment temperature is smaller than or equal to a first temperature threshold value (namely, the low-temperature environment), the control current is reduced accordingly, so that the offset signal of the compensated power amplifier is synchronously reduced, and the offset signal of the power amplifier is synchronously reduced. The working gain of the power amplifier in a low-temperature environment can be reduced, so that the durability of the power amplifier is improved.

A push-pull source follower circuit includes a main source follower, a first biasing circuit, and a second biasing circuit. The main source follower includes a first transistor and a second transistor between a first power rail and a second power rail, where the first transistor and the second transistor include an N-type transistor and a P-type transistor. The first biasing circuit programs a bias current of the main source follower through generating a first bias voltage of the first transistor. The second biasing circuit programs an output mean voltage of the push-pull source follower circuit through generating a second bias voltage of the second transistor. The bias current and the output mean voltage are programmed independently.

The invention discloses a biasing circuit, an array substrate and detection equipment. The biasing circuit comprises a coupling module and an equivalent resistance module, the first end of the coupling module is connected with an input signal, and the second end of the coupling module serves as the output end of the biasing circuit; the first end of the equivalent resistance module is connected with the second end of the coupling module, the second end of the equivalent resistance module is connected with bias voltage, and the control end of the equivalent resistance module is connected with control voltage; wherein the equivalent resistance module comprises at least one transistor, and the control voltage is used for controlling the working state of the transistor in the equivalent resistance module and adjusting the resistance value of the transistor in the equivalent resistance module. According to the technical scheme, the use performance of the detection equipment is improved.

In at least one embodiment, an amplifier (180) is provided. The amplifier (180) includes an input stage, a plurality of output stages, and a combining stage (106). The input stage includes a first input transistor and a second input transistor to receive an input signal. Each output stage includes at least one output resistor. The plurality of output stages is configured to operate in a one of a push mode to output a positive cycle of the input signal to a load and a pull mode to absorb a negative cycle of the input signal from the load. The combining stage (106) includes a plurality of combining resistors, each combining resistor forming a star connection with the output resistors for each output stage to receive a first voltage therefrom and to generate an output voltage based on the first voltage to produce a low distortion output signal at the load.

The embodiment of the present disclosure provides a variable gain amplifier with high temperature stability, which is applied to the technical field of electronic circuit. The amplifier comprises a constant transconductance bias circuit, a first variable gain amplifier and a second variable gain amplifier; wherein the output end of the constant transconductance bias circuit is connected with the input common source transistor of the first variable gain amplifier and the second variable gain amplifier, and is used for providing a constant transconductance bias signal which is compensated according to temperature change; the input end of the first variable gain amplifier is used for receiving an externally input differential signal, and the output end is connected with the input end of the second variable gain amplifier, and is used for transmitting the differential signal after coarse adjustment attenuation to the second variable gain amplifier; and the output end of the second variable gain amplifier is used for outputting an attenuation differential signal with temperature stability. In this way, by restraining the influence of temperature change on the transconductance characteristic of the input common source transistor of the variable gain amplifier, the stable attenuation characteristic of the variable gain amplifier in a wide temperature range is ensured.

The present disclosure relates to power amplifier circuitry with temperature-controlled biasing and protective shutdown based on die temperature. A first amplifier die and second amplifier die each have their own power amplifiers and temperature-sensing elements. An amplifier controller die controls both power amplifier dice, generating a bias current that can be coupled to either power amplifier die to activate the power amplifier of one or the other die. The bias current magnitude is updated in response to decreased temperature-dependent voltage from the inactive die which is at an average temperature of both dice. A switch control logic also selects the temperature-dependent voltage of the temperature-sensing element of the active die to input to a comparator that outputs a thermal shutdown signal if the temperature of the active die approaches a damaging level, and the switch control logic controls opening of switches connected to the bias output terminal to prevent damage.

The utility model relates to a PD detection alarm protection circuit of a laser. The PD detection alarm protection circuit comprises a PD sensor, a resistance voltage division circuit, an in-phase proportion amplification circuit, a comparator circuit and a voltage reference circuit, the PD sensor collects a PD photocurrent signal of the laser and then sends the PD photocurrent signal to the resistance voltage division circuit; the resistance voltage division circuit converts the PD photocurrent signal into a PD voltage signal and then sends the PD voltage signal to the in-phase proportion amplification circuit; the in-phase proportional amplification circuit amplifies the PD voltage signal and then transmits the PD voltage signal to one input end of the comparator circuit, the other input end of the comparator circuit is connected with the voltage reference circuit, and the output end of the comparator circuit outputs a processed PD signal; by optimizing a pre-stage amplification framework and a post-stage reference design, the detection reliability is remarkably improved while the cost is reduced, and the detection response speed is very high. And real-time monitoring can be realized through an upper computer. The system is especially suitable for a safety protection system of industrial laser equipment.

An envelope tracking (ET) radio frequency (RF) front-end circuit receives a single tracking signal (e.g., Vramp) from a baseband transceiver and generates a plurality of control signals (Vcc). The control signals are created by a multiple control signal generator circuit based on a calculated load estimate for each relevant power amplifier. The load estimate may be calculated from a sensed current and voltage. By providing control signals optimized for loads presented to the power amplifiers, the overall efficiency of the transmitter is improved.

The proposed solution relates to a computer-implemented method for outputting an amplified audio output signal (S2) using an amplification unit (1) for an acoustic vehicle warning system (100) to generate sound audible from persons in the vicinity of a vehicle (200). The method involves receiving an audio input signal (S1) and a temperature value (T) from a temperature sensing unit (20). A control unit (10) of the amplification unit (1) adjusts the amplification of the audio input signal (S1), taking into account at least one temperature reduction measure depending on the temperature value (T), in order to generate the audio output signal (S2). According to the proposed solution, the temperature reduction measure comprises at least one of i.a. adjusting the audio input signal (S1) with respect to at least one frequency (F1) of the audio input signal (S1) while maintaining or increasing the gain of at least one other frequency (F2) of the audio input signal (S1), ii. reducing an operating frequency of the amplification unit (1), and iii. adding at least one frequency (F3) to the audio output signal (S2) that is not included in the audio input signal (S1).

The invention provides a low-noise amplifier and a chip wherein the low-noise amplifier comprises: a cascade amplification module, which comprises N cascade amplification units and amplifies and outputs an input signal under the action of each stage of bias signal, N being a natural number greater than 1; the active bias module is used for providing a corresponding bias signal for a first-stage amplification unit in the cascade amplification module; the control logic module takes the power supply voltage or the ground voltage as the output voltage based on the control signal; and the resistance voltage division module is connected with the control logic module and is used for carrying out resistance voltage division on the output voltage and providing corresponding bias signals for the second-stage amplification unit to the Nth-stage amplification unit in the cascade amplification module. According to the low noise amplifier and the chip provided by the invention, the problem that a traditional structure has a current abnormal phenomenon under a high-temperature condition is solved.

The invention provides a current multiplexing type output amplifier. The current multiplexing type output amplifier comprises a current multiplexing type input stage, a first self-biased diode pair, a second self-biased diode pair, a first AB type output stage and a second AB type output stage, wherein the first self-biased diode pair and the second self-biased diode pair are connected with the current multiplexing type input stage; the first AB type output stage is connected with the first self-biased diode pair; according to the invention, two self-biased diode pairs are adopted to replace a floating voltage source in the prior art. When a large pulse signal is input, one diode in each of the two diode pairs is in a cut-off state, transient change current I only flows into or out of the output end from a certain branch, and compared with a traditional amplifier, the slew rate is multiplied under the same bias current condition. In addition, the input stage adopts a current multiplexing type architecture combining a PMOS (P-channel Metal Oxide Semiconductor) and an NMOS (N-channel Metal Oxide Semiconductor), under the same bias current, the equivalent input transconductance is the sum of the transconductance of the PMOS and the transconductance of the NMOS, and the unity gain bandwidth is also multiplied.

The application belongs to the technical field of radio frequency amplifiers, and specifically discloses a CMOS common-source common-gate radio frequency amplifier with temperature and process deviation compensation, which comprises a bias circuit and an amplification stage circuit; the bias circuit adopts a temperature and process deviation compensation bias circuit; when the ambient temperature changes, the bias circuit can collect the real-time temperature of an amplifying tube and generate a new bias voltage, so that the bias state of the amplification stage circuit is dynamically adjusted, and the fluctuation of the gain and power consumption of the amplifier with the temperature change is reduced; similarly, when the process parameter distribution deviation occurs in different regions of a wafer during the chip manufacturing process, the same chip bias circuit and the amplifying tube region of the amplification stage circuit are the same, the same process deviation is generated, the bias circuit can generate a new bias voltage according to the process deviation, the bias state of the amplification stage circuit is dynamically adjusted, and the fluctuation of the gain and power consumption of the amplifier with the process deviation is reduced. The application is suitable for a low-noise amplifier in a WiFi radio frequency front-end module.

The application relates to the chip technical field and discloses an input bias current compensation circuit, a bipolar input rail-to-rail operational amplifier and a chip. The circuit comprises a sampling circuit, a control circuit and a mirror circuit. The sampling circuit is used for sampling input bias currents of NPN input tubes and PNP input tubes in an input stage of a rail-to-rail operational amplifier. The control circuit is used for controlling the input bias current of the NPN input tube to be turned on and the input bias current of the PNP input tube to be turned off in a first common-mode input level range, and controlling the input bias current of the NPN input tube to be turned off and the input bias current of the PNP input tube to be turned on in a second common-mode input level range. The mirror circuit is used for providing NPN mirror currents of the input bias current of the NPN input tube and PNP mirror currents of the input bias current of the PNP input tube, and outputting superimposed currents of the NPN mirror currents and the PNP mirror currents. The application can adapt to the input bias current changes caused by different common-mode input ranges through segmented compensation.

The embodiment of the present disclosure discloses a power amplifier circuit, a radio frequency chip and an electronic device. The power amplifier circuit comprises: at least two stages of power amplifiers in cascade; a low-frequency resonant network comprising a first capacitor, a second capacitor and a first inductor; the first capacitor is coupled between a power supply end and a ground end; the second capacitor is coupled between a first end of the power amplifier and the ground end; the first inductor is coupled between the first capacitor and the second capacitor; and the first capacitor comprises a decoupling capacitor.

The invention discloses a multilayer ceramic-based amplifier high-isolation DC power supply circuit, which comprises a multilayer ceramic plate, a capacitive circuit and an inductive circuit, the capacitive circuit comprises a left capacitive circuit and a right capacitive circuit; the left capacitive circuit comprises a left capacitive circuit piece, a first left extension piece and a second left extension piece, and the right capacitive circuit comprises a right capacitive circuit piece, a first right extension piece and a second right extension piece; the inductive circuit comprises an upper inductive circuit, a middle inductive circuit and a lower inductive circuit which are connected; according to the invention, a unit circuit with a small specific size is realized through a multilayer ceramic design, a circuit pattern can be built in a proper area among multiple layers of substrates according to actual isolation use requirements in a specific product, and meanwhile, through the superposition effect of a plurality of structural units, the circuit pattern can be built in a proper area among the multiple layers of substrates in a complex inter-board product design. And the crosstalk influence between the power supply and the amplifier is obviously reduced under the condition of not additionally occupying a relatively large design space.

The invention belongs to the technical field of integrated chips, and particularly relates to a bias circuit of a radio frequency power amplifier and the radio frequency power amplifier, which comprises a first transistor Q0, a second transistor Q1, a third transistor Q2, a fourth transistor Q3, a fifth transistor Q4, a sixth transistor Q5, a seventh transistor Q6 and an eighth transistor Q7, a sixth transistor Q5 is adopted as a sampling structure and an eighth transistor Q7 is adopted as active negative feedback, so that the influence of process errors and temperature change on the transistors is used for compensating the influence of temperature on the fifth transistor and the first transistor, and the transfer of a quiescent working point is greatly corrected; meanwhile, according to the scheme, an active negative feedback path can be formed at the base electrode of the power supply transistor Q1 and an output signal port, and the linearity is further improved.

The invention relates to the technical field of digital signal processing and power amplification, and discloses a power optimization method for high-power pulse amplification based on digital preprocessing. Pulse voltage is sampled and normalized into unit energy discrete pulse signals, frequency domain transformation is carried out under a unified energy reference, and frequency point amplitudes and phases are extracted to form a frequency spectrum sequence; establishing a frequency response model according to the cut-off frequency of the power amplifier to obtain an amplitude gain coefficient, constructing a pre-compensation function comprising an amplitude pre-compensation factor and a phase compensation amount changing along with the frequency, acting on a frequency spectrum sequence, and performing inverse transformation to form a pre-compensation time domain signal; after a power amplifier is input, an output frequency spectrum is reconstructed and inversely transformed to obtain an output time domain signal, peak power and frequency spectrum energy fidelity are calculated, power normalization is performed when the fidelity meets a threshold value, and a transmitting system is accessed, so that the problems of difficult compensation unification and frequency spectrum distortion are solved, and target power output is realized on the premise of ensuring frequency spectrum fidelity.

This application relates to the field of operational amplifier circuit technology, and more particularly to an inverting operational amplifier circuit for eliminating input offset voltage. It includes an input resistor for receiving an input voltage; an operational amplifier for inverting and amplifying the input voltage; an output resistor section connected in series between the output terminal of the operational amplifier and the input resistor, the output resistor section being composed of multiple output resistors connected in series; multiple current sources connected to nodes between the various output resistors of the output resistor section, the current sources being used to compensate for the output offset voltage caused by the input offset voltage of the operational amplifier; and a digital code input section for adjusting the current values ​​of the current sources; wherein the voltage value of the output offset voltage is determined based on the current values ​​of the multiple current sources and the corresponding resistance values ​​of the output resistor section. Using this application is advantageous for canceling the output offset voltage caused by the input offset voltage of the operational amplifier and appearing at the output terminal.

The embodiment of the application provides a direct current offset correction method and a correction system, the method comprising: obtaining a first direct current output offset voltage of a complex filter to be corrected; determining a relationship between a direct current input voltage and the direct current output offset voltage under an ideal filter based on a preset virtual ground characteristic of an operational amplifier, according to an input current of an input point of the operational amplifier and a preset resistance of the complex filter; determining a to-be-corrected current according to the relationship between the direct current input voltage and the direct current output offset voltage under the ideal filter and the first direct current output offset voltage, and working under a normal working condition by using the to-be-corrected current; and based on the preset virtual ground characteristic of the operational amplifier, performing one or more iteration calculations on the input current of the input point of the operational amplifier, the preset resistance of the complex filter and the to-be-corrected current, so that a second direct current offset voltage is a preset value, the IQ structure of the complex filter is not damaged, and the I / Q two paths can be simultaneously corrected, and one-step correction is completed.

To provide a sufficient ground reference to a power transistor die.SOLUTION: An amplifier module 200 includes a module substrate 210. A thermal dissipation structure 316 extends through the module substrate. A ground contact 434 of a power transistor die 233 is coupled to a surface of the thermal dissipation structure. An encapsulant material 380 covers a mounting surface 209 of the module substrate and the power transistor die. A surface of the encapsulant material defines a contact surface 382 of the amplifier module. A ground terminal 244 is embedded within the encapsulant material and has a proximal end coupled to a ground terminal pad 344 and a distal end exposed at the contact surface. The ground terminal pad is electrically coupled to an RF ground layer 302 through a via 444. The RF ground layer is also electrically coupled to the thermal dissipation structure.SELECTED DRAWING: Figure 4A

An RFA (radio frequency amplifier) includes an NCSA (N-type common-source amplifier) established upon a first source node and configured to receive a first signal and output a first internal current; a first NCGA (N-type common-gate amplifier) configured to receive the first internal current and output a second internal current; a second NCGA configured to receive the second internal current and output a first output current; a PCSA (P-type common-source amplifier) established upon a second source node and configured to receive a second signal and output a third internal current; a first PCGA (P-type common-gate amplifier) configured to receive the third internal current and output a fourth internal current; a second PCGA configured to receive the fourth internal current and output a second output current; and a load network comprising a parallel connection of a primary inductor and a tuning capacitor configured to establish an output signal.

The application relates to the technical field of signal processing, and discloses a logarithmic detector, which comprises at least one feedback loop module, multiple rectification modules, a filtering module, a buffer module, a temperature compensation module and a band gap reference module; the feedback loop module is used for amplifying an input differential input signal to obtain an amplified differential signal; the rectification module is used for converting the differential input signal and the amplified differential signal to output a current signal; the buffer module is used for performing level shifting on a filtered voltage signal to output a detection voltage; the temperature compensation module is used for performing temperature compensation on the detection voltage to output an output signal; one feedback loop module comprises one pre-stage limiting amplification unit, two limiting amplification units and a direct current feedback compensation unit. The direct current feedback compensation unit performs negative feedback on the differential input signal, reduces direct current distortion, and improves the precision of the output signal; the temperature compensation module performs temperature compensation on the voltage signal, and improves the precision of the output signal.

The invention relates to the technical field of intelligent chips, and discloses a transistor circuit optimization method for improving the heat dissipation performance of an amplifier chip, and the method comprises the steps: carrying out the thermal resistance modeling of an input matching network, and obtaining the temperature rise distribution; a copper-graphene composite thermal conductivity enhancing structure is arranged on a grid wiring path; embedding an aluminum nitride high-thermal-conductivity dielectric layer below the grid electrode and connecting the deep silicon through hole to the substrate heat sink to construct a vertical low-thermal-resistance channel; a heat isolation groove filled with aerogel is arranged between the matching network and the active region to block transverse heat flow; a miniature temperature sensor and a bias control circuit are integrated, and gate voltage drift is dynamically compensated. According to the invention, the active heat dissipation structure matched with the thermal resistance of the input matching network is constructed in the grid region of the transistor, so that local hot spots caused by mismatching of the thermal resistance are eliminated fundamentally; a vertical heat dissipation channel formed by the high thermal conductivity dielectric layer and the deep silicon through hole significantly reduces a thermal resistance path from the grid electrode to the heat sink.