1329results about "Amplifier modifications to reduce temperature/voltage variation" patented technology

The invention relates to the technical field of wireless communication, and provides a radio frequency power amplifier and a radio frequency chip, the radio frequency power amplifier comprises an input matching circuit, a first-stage amplifier, a first inter-stage matching circuit, a second-stage amplifier, a second inter-stage matching circuit, a third-stage amplifier and an output matching circuit which are electrically connected in sequence; the radio frequency power amplifier further comprises a control module, a direct current power supply module, a first bias circuit, a second bias circuit and a third bias circuit. The first biasing circuit comprises a power detection network and a switch control circuit; the first input end of the power detection network serves as the first input end of the first bias circuit, the second input end of the power detection network serves as the second input end of the first bias circuit, and the power detection network is used for receiving a radio frequency signal, converting the radio frequency signal into a control voltage in a detection mode and outputting the control voltage to the input end of the switch control circuit. The control switch controls connection or disconnection of the circuit. According to the invention, the robustness of power can be improved.

The invention discloses a slew rate enhancement circuit of an operational amplifier, which comprises a comparison module used for comparing a positive input voltage and a negative input voltage of the operational amplifier and generating a first comparison signal and a second comparison signal according to a comparison result; the slew rate enhancing module is used for enhancing the slew rate of the falling edge of the output voltage of the operational amplifier according to the first comparison signal and enhancing the slew rate of the rising edge of the output voltage of the operational amplifier according to the second comparison signal; the common-mode feedback module is used for clamping the common-mode voltage of the first comparison signal and the common-mode voltage of the second comparison signal to a reference voltage when the operational amplifier is in a steady state, so that the slew rate enhancing module is in a closed state; therefore, the slew rate of the output voltage of the operational amplifier can be quickly enhanced when the operational amplifier has large step signal output, so that the output of the operational amplifier is quickly responded and established.

The embodiment of the invention provides a cascode amplifier, a power supply and a server. The cascode amplifier comprises a substrate, a GaN transistor and an S transistor. The substrate comprises a plate, a control pin, a first pole pin and a second pole pin. The GaN transistor is arranged on the plate, the GaN transistor comprises a first electrode, a second electrode and a control electrode, the GaN transistor comprises a first surface, the first surface deviates from the plate, the first electrode, the second electrode and the control electrode of the GaN transistor are arranged on the first surface, and the first electrode of the GaN transistor is connected to the first electrode pin. The S transistor comprises a first electrode, a second electrode and a control electrode; the first electrode of the S transistor is connected to the second electrode of the GaN transistor, and the second electrode of the S transistor is connected to the control electrode and the second electrode pin of the GaN transistor. The control electrode of the S transistor comprises a plurality of first connection points, and the control electrode of the S transistor is connected to the control pin through the plurality of first connection points.

An oscillator (1) according to the present disclosure generates output power, and provides a microwave that is in accordance with the output power as an output wave. The oscillator (1) includes a signal generator (10), a power amplifier (20), and a temperature sensor (40). The signal generator (10) generates an oscillation signal. The power amplifier (20) includes a final stage device (22), and amplifies the oscillation signal to generate the output power. The temperature sensor (40) detects a temperature of the final stage device (22). The final stage device (22) is packaged. The temperature sensor (40) is disposed in a package (200) that includes the final stage device (22).

The invention provides a correlated double-sampling program-controlled gain amplifier for a high-energy particle detection pixel sensor and an implementation method, and solves the technical problem that a large dynamic range and high readout precision cannot be considered at the same time during existing high-energy particle detection. The circuit comprises a correlated double-sampling circuit, a signal polarity conversion circuit, an amplification feedback circuit and a configuration automatic judgment circuit. The correlated double sampling circuit is used for performing double sampling on the output voltage of the pixel signal to obtain twice sampling voltage; the configuration automatic judgment circuit is used for selecting configurations for switching according to the voltage difference between the two sampling voltages to obtain an output signal; and the amplification feedback circuit is used for performing fixed gain voltage amplification on the output signal to obtain an amplified voltage signal. The circuit can be widely applied to the technical field of integrated circuits.

Aspects of gate voltage level shifting circuits are described. An example power amplifier includes a depletion mode power transistor and a level shift circuit. The level shift circuit is configured to generate a level-shifted gate bias control signal for the depletion mode power transistor based on a gate bias control signal. Among other benefits, the level shift circuit facilitates the replacement of the power transistor in a power amplifier system, particularly in cases where the gate bias control levels generated by the amplifier system are insufficient to completely pinch-off the depletion mode power transistor.

The invention discloses a low-voltage gallium nitride power amplifier based on second harmonic suppression. The low-voltage gallium nitride power amplifier is used for solving the technical problem that the overall efficiency of a radio frequency system is low due to an existing radio frequency power amplifier. The amplifier comprises an input stage circuit, an input stage low-voltage gallium nitride transistor, an intermediate stage circuit, an intermediate stage low-voltage gallium nitride transistor, an output stage circuit, an output stage low-voltage gallium nitride transistor group, a drain bias capacitor, a drain bias voltage port and a secondary harmonic suppression output matching network, by arranging an input-stage low-voltage gallium nitride transistor, an intermediate-stage low-voltage gallium nitride transistor, an output-stage low-voltage gallium nitride transistor group, a secondary harmonic suppression output matching network and a corresponding connection relationship, the secondary harmonic suppression output matching network can be used for suppressing a low-voltage gallium nitride transistor on the basis of a low-voltage gallium nitride process technology. Harmonic suppression is directly carried out on the second harmonic, so that the output power and the power additional efficiency of the radio frequency power amplifier are improved, and the overall efficiency of a radio frequency system is improved.

The invention discloses an ultra-wideband low-noise amplifier based on a double-coupling structure, relates to the field of electronic devices, and is used for solving the problems of large occupied area and large noise coefficient of a distributed amplifier in the prior art. Comprising a broadband input matching network acting on a first-stage circuit, a transconductance enhancement coupling structure and an active bias structure; the parallel RC negative feedback structure and the series-parallel coupling inductance peaking structure act on the second-stage circuit; the transconductance enhancement coupling structure at least comprises a first transistor, a first microstrip line connected with a source electrode of the first transistor and a second microstrip line connected with a drain electrode of the first transistor, and the first microstrip line and the second microstrip line are mutually coupled. Part of drain electrode current signals are coupled to the source electrode to be secondarily amplified, the high-frequency gain of the first-stage circuit is effectively improved, post-stage noise can be restrained, meanwhile, minimum noise matching under high frequency is carried out through the source electrode degeneration inductor and the broadband input matching network, and the noise performance is excellent; and the area can be saved.

The invention discloses an open-circuit compensation type bias circuit, which belongs to the technical field of solid-state microwave power amplifiers and comprises a bias line, an open-circuit compensation line, a first transmission line and a second transmission line. One end of the first transmission line, one end of the open circuit compensation line, one end of the bias line and one end of the second transmission line are connected; the other end of the first transmission line is a first microwave port, the other end of the open circuit compensation line is suspended, the other end of the bias line is a power port, and the other end of the second transmission line is a second microwave port; the physical length of the bias line and the physical length of the open-circuit compensation line meet the relational expression that the sum of the physical length of the bias line and the physical length of the open-circuit compensation line is equal to the sum of four of the central wavelength of the working frequency band of the power amplifier. Through the combination of the transmission line, the compensation line and the bias line, the parasitic inductance of the bias circuit is reduced, and compared with an existing bias circuit, the parasitic inductance is reduced by more than 1 / 4.

Technologies are provided to calculate a logarithm of an input current to a logarithmic transimpedance amplifier device at a particular temperature. The logarithm of the current is calculated in digital domain based on sampling of analog signals that are internal to the logarithmic transimpedance amplifier device. The sampling can be performed, in some cases, by an analog-to-digital converter device integrated into the logarithmic transimpedance amplifier device. The calculation in digital domain is performed by one or more processor external to the logarithmic transimpedance amplifier device. The calculation includes a determination of a temperature compensation factor based on an internal analog signal indicative of temperature of the logarithmic transimpedance amplifier device. The temperature compensation factor permits removing temperature dependence from a logarithmic output voltage originating from the input current. Operating in the digital domain permits applying corrections that account for residual leakage current and an emitter-resistance correction at high input currents.

The invention discloses a high-speed and high-linearity margin amplifier and an analog-to-digital converter, belongs to the technical field of integrated circuits, and solves the technical problem that an existing source follower cannot meet high-speed and high-linearity indexes. The amplifier comprises a margin amplifier bias and output module, a phase inverter and a linear transconductance unit based on an AB-class super source follower structure, wherein the bias and output module, the linear transconductance unit and the phase inverter are connected in sequence. The linear transconductance unit can generate high-linearity transconductance, so that the linearity of the whole margin amplifier is improved, the symmetry of the positive output end and the negative output end of the margin amplifier under the condition of high-frequency or large-swing input can be ensured, and the high-speed and high-linearity index can be effectively met. In addition, a gain calibration module resistant to temperature and process changes is further introduced, and the influence caused by follow-up system environment temperature changes can be automatically compensated.

According to the operational amplifier with the low offset voltage and the electronic equipment, on one hand, the offset voltage existing in the first operational amplifier unit and the offset voltage existing in the second operational amplifier unit are stored and accurately offset through the first offset voltage elimination unit and the second offset voltage elimination unit respectively; the first output current unit and the second output current unit generate first output current and second output current errors respectively due to the offset voltage. And on the other hand, the first operational amplifier module and the second operational amplifier module are controlled to be alternately in different working stages by controlling the on-off of the switch, so that the input end of the operational amplifier module in a normal working state in each clock period is ensured to have extremely low offset voltage, and the offset voltage elimination continuity is ensured.

The present invention provides a broadband harmonic suppression power amplifier containing a resistive filter, and relates to the technical field of power amplifiers. The present invention effectively solves the power supply compatibility problem between BJT power units and GaN power units through innovative single-power intelligent reconstruction technology. Ensure that the negative gate voltage required by the GaN power unit is established first and intelligently triggers the drain power supply, reducing the risk of device damage caused by bias disorder. The built-in resistive filter network and cascade control design can adaptively suppress high-frequency harmonic interference, improve signal purity and system electromagnetic compatibility. Through modular circuit integration, while retaining the original power supply interface and heat dissipation structure, the seamless upgrade from BJT to GaN architecture is achieved, reducing the cost and cycle of hardware transformation. Supporting seamless switching of dual-mode power units, the operating frequency range of old equipment is expanded and the output power is enhanced without the need for overall reconstruction, while reducing overall energy consumption.

The invention discloses a gain boosting type floating anti-phase dynamic amplifier circuit, and relates to the technical field of integrated circuits, the gain boosting type floating anti-phase dynamic amplifier circuit comprises a power supply, a main amplifier, a first auxiliary amplifier and a second auxiliary amplifier, and the main amplifier and the auxiliary amplifiers both adopt a cascode floating anti-phase dynamic amplifier structure; the main amplifier comprises a first power supply capacitor, a second power supply capacitor, a plurality of first common-source transistors and a plurality of first common-gate transistors; a plurality of drain electrodes of the plurality of first common-source transistors are respectively connected with the input ends of the first auxiliary amplifier and the second auxiliary amplifier, and a plurality of grid electrodes of the first common-gate transistors are respectively connected with the output ends of the first auxiliary amplifier and the second auxiliary amplifier; the first auxiliary amplifier and the second auxiliary amplifier each comprise a plurality of second common-gate transistors, and a plurality of gates of the second common-gate transistors are directly connected to the common-mode level. According to the amplifier circuit, the gain of the amplifier is improved on the premise that the speed and the stability are guaranteed.

The invention discloses a self-stabilization zero operational amplifier circuit free from input imbalance and common mode influence, relates to the technical field of integrated circuits, and is applied to a high-precision operational amplifier. The operational amplifier is a three-stage operational amplifier and mainly comprises a single auxiliary input end zeroing amplifier, a main amplifier and an output stage. After a zero setting auxiliary input end of a traditional zero setting amplifier is changed into single-end input from differential input and a zero setting input stage is subjected to multi-stage design, an offset voltage of 3.8 microvolts, a low-frequency gain of 189dB and a gain bandwidth product of 8.6 MHz are realized under power consumption of 400 microamperes, the phase margin of the operational amplifier is 78 degrees under unit gain, and the stability requirement is met. Compared with a traditional structure, the low-residual-offset operational amplifier has the advantages that lower residual offset and larger operational amplifier bandwidth are achieved, and the application range is wider.

An SIP module integrated direct wave amplifier comprises a power supply control module, an X-band down-conversion module and an L-band down-conversion module, the power supply control module provides attenuation control signals and a low-ripple power supply for the X-band down-conversion module and the L-band down-conversion module, the X-band down-conversion module performs primary frequency conversion on externally received radio frequency signals, and the L-band down-conversion module performs secondary frequency conversion on the externally received radio frequency signals. The L-band down-conversion module performs secondary frequency conversion on the radio frequency signal subjected to primary frequency conversion by the X-band down-conversion module, the two down-conversion modules are arranged to realize structure modularization and standardization by adopting a SiP modularization mode, and each module is independent in function, so that the structure is simple, the cost is low, and the cost is low. Meanwhile, the serial-parallel conversion chip control circuit is adopted to control the numerical control attenuator to meet the requirements for high gain and large dynamic range of the direct wave amplifier, the architecture and the number of control circuits are simplified, and the circuit is easy to build, easy to use, convenient to integrate and high in selection flexibility.

The utility model provides a CP sampling circuit of an automobile alternating current charging pile, and relates to the technical field of CP sampling circuits, the technical scheme provided by the utility model adopts a double-path sampling design, CP signals in two forms of PWM and DC can be processed at the same time, and the signal processing precision is improved through multi-stage amplification and filtering. The overall structure of the circuit enables the circuit to quickly respond to the voltage change of the CP signal in different charging stages and accurately identify different voltage levels, so that the sampling speed and accuracy of the automobile AC charging pile to the CP signal can be improved.

An amplifier circuit includes a first input stage with a differential input transistor pair and a second gain stage having an output node coupled to a load. A node in the first gain stage is coupled to the output node in the second gain stage. A feedback line couples the output node to the control node of a first transistor of the differential input transistor pair. Current mirror circuitry is coupled to a current flow path through a further transistor in the second gain stage and includes a sensing node configured to produce a sensing signal indicative of the current supplied to the load. The sensing signal at the sensing node is directly fed back to the control node of the first transistor of the differential input transistor pair to provide a zero in the loop transfer function that is matched to and tracks and cancels out a load-dependent pole.

The utility model provides a kind of electrostatic discharge protection circuit and low noise amplification module, the electrostatic discharge protection circuit is applied to low noise amplification circuit, the low noise amplification circuit includes input matching circuit and the low noise amplifier of the output end being connected to the input matching circuit;The electrostatic discharge protection circuit includes inductance and resistance;The first end of the inductance is used to connect to the signal input end of low noise amplifier;The first end of the resistance is connected to the second end of the inductance, and the second end of the resistance is grounded.The electrostatic discharge protection circuit in the utility model is connected to the input end of low noise amplifier, and the noise coefficient of low noise amplifier will not be deteriorated, and the performance of low noise amplifier will not be affected, and the input stability of low noise amplifier will not be affected simultaneously.

The invention provides a transmitter and a gain temperature compensation circuit thereof, and the output end of a temperature detection circuit is connected with the control end of a variable resistance circuit. The variable resistance circuit is connected in parallel with the input end of a power amplifier in the transmitter; the temperature detection circuit outputs a control signal to the variable resistance circuit according to the detected temperature and adjusts the resistance value of the variable resistance circuit; by introducing the variable resistance circuit and the temperature detection circuit and dynamically adjusting the resistance value according to the temperature change, the adjustment of the load in the transmitter can be effectively realized, so that the gain is kept relatively constant under different temperature conditions, and the design not only improves the stability and reliability of the circuit, but also improves the reliability of the circuit. And the performance of the circuit under different environmental conditions is optimized, the power consumption of the transmitter is reduced, the working point of a transistor in the transmitter is not influenced, and the performance of the transmitter is relatively stable.

The invention relates to a switch adaptive bias circuit, which belongs to the technical field of radio frequency integrated circuits, is used for adjusting the bias state of a power amplification circuit, and comprises a linear bias module, a temperature compensation module and a switch control module, the linear bias module, the temperature compensation module and the switch control module are connected in sequence; the bias current output end of the linear bias module is connected with the base electrode of a power transistor of the power amplification circuit, and the linear bias module is used for outputting bias current to adjust the linearity of the power transistor; the temperature compensation module is used for suppressing the temperature drift of the power amplification circuit so as to realize temperature compensation; and the switch control module is provided with a switch control transistor, and an emitter of the switch control transistor is used as a switch interface. According to the invention, the linear bias module, the temperature compensation module and the switch control module are integrated, so that the integration level of the self-adaptive bias circuit is improved; the on and off of the switch self-adaptive bias circuit are realized through the control voltage of the switch interface, and wide-range stable switch regulation and control are realized.

The invention discloses a broadband high-precision voltage compensation control method of a power amplifier, relates to the technical field of broadband compensation, and is used for solving the problem of low voltage compensation efficiency caused by cooperative distortion caused by mutual regulation and control when the signal frequencies of different input channels are close. Recording information of the input signal is called to judge the signal type of the input signal, when the multi-frequency signal exists in the analysis database, the signal amplitude and the signal frequency of the multi-frequency signal are collected, the high-order intermodulation distortion degree of the input signal is judged, and the distortion index of the multi-frequency signal is calculated; selecting to start intermodulation distortion processing or enter a frequency coexistence risk test mechanism according to the high-order intermodulation distortion degree of the multi-frequency signals, calculating frequency intermodulation characteristics of different single-frequency signals, and performing effect integration on the frequency intermodulation characteristics of all the single-frequency signals in the analysis database according to the number of the single-frequency signals; and judging whether to carry out intermodulation distortion processing or not by combining the distortion index of the multi-frequency signal.

The invention provides a low-frequency measurement amplifying circuit for suppressing direct-current bias voltage and noise. The low-frequency measurement amplifying circuit is mainly used for reducing the direct-current bias voltage and suppressing interference of low-frequency and high-frequency noise of the circuit. The scheme of the invention comprises a low-pass filtering module, a charge conversion module, a multi-gear gain adjustment module and an output signal protection module. High-frequency noise of weak charge signals generated by the piezoelectric sensor is filtered out through the low-pass filtering module, then the charge signals are converted into voltage signals through the charge conversion module, the voltage signals are amplified according to different proportions through the multi-gear gain adjusting module, and finally the converted and amplified voltage signals are output through the output signal protection module. Compared with the prior art, the low lower limit cut-off frequency is achieved, meanwhile, the direct current bias voltage and noise generated by the circuit are reduced, a band elimination filter is formed through circuit design, the influence of low-frequency and high-frequency interference signals is restrained, and the quality of output signals is improved.

The invention provides a control system for suppressing peak of output voltage and current of a power amplifier. The system comprises a PS signal processing module, a PL signal processing module and a high-voltage power circuit, wherein the PS is configured to receive a bus signal issued by an upper computer, execute digital Gaussian filtering processing on the bus signal and then transmit the bus signal to the PL signal processing module; meanwhile, relevant data of the power amplifier are collected and uploaded; the PL signal processing module is configured to receive a signal which is issued by the PS and is subjected to digital Gaussian filtering processing, and pre-process the signal; and transmitting the processed signal to a high-voltage power circuit to control the high-voltage power circuit to execute power conversion operation on the load. According to the method provided by the invention, smooth transition is realized at the phase jump position of the signal by adjusting the parameters of the digital Gaussian filter, so that the peak of the output voltage and current of the power amplifier is inhibited, the stress of a post-stage high-voltage power circuit device is reduced, the post-stage output power is effectively improved, and the stability of the power amplifier is improved.

The invention relates to the technical field of amplifiers, and discloses an analog-to-digital converter combination instrument amplifier which comprises a first-stage amplifier, the first-stage amplifier is in signal connection with a second-stage amplifier, the second-stage amplifier is in signal connection with a front-end low-pass filter (LPF), the front-end low-pass filter (LPF) is in signal connection with an analog-to-digital converter (ADC), and the analog-to-digital converter (ADC) is in signal connection with the analog-to-digital converter. And an unbalanced input-to-balanced differential circuit output module is arranged between the second-stage amplifier signal and a front-end low-pass filter (LPF). From the perspective of signal processing and conversion, a precise signal transition bridge is constructed by adding an unbalanced input-to-balanced differential circuit output module, unbalanced signals output by a second-stage amplifier are converted into double-end balanced differential signals, common-mode noise interference is effectively resisted through a differential transmission mode, the signal purity is guaranteed, and the signal quality is improved. The front-end low-pass filter and the analog-to-digital converter are adaptive to differential signals, so that the signal transmission is stable and anti-interference, and the analog-to-digital conversion is more accurate.

A current sense amplifier measures a voltage drop in a drive transistor LS to measure the current flowing through the drive transistor LS. The current sense amplifier includes a preamplifier pre-amp, to which a voltage across the drive transistor LS is inputted, and which obtains a positive output and a negative output corresponding to a voltage difference of the inputted voltage across the drive transistor; and a switch sw, which connects the input end of a common mode voltage vcm and the negative output, the common mode voltage vcm serving as the operation reference of the preamplifier pre-amp. A change of the positive output caused by turning on / off the switch sw can be detected.

A control device (100) for controlling at least one actuator (200) for actuating an optical element (310) of an optical system (300), comprising an amplifier (110) which is configured to receive a provided supply voltage (V1) at an input node (K1) and to provide a control voltage (V2) for the actuator (200) at an output node (K2), wherein the amplifier (110) has a resistive voltage divider (R1, R2) for adjusting the gain of the amplifier (110) with a first resistor (R1) and a second resistor (R2) and a capacitive voltage divider (C1, C2) with a first capacitor (C1) and a second capacitor (C2), wherein the capacitive voltage divider (C1, C2) is connected in parallel to the resistive voltage divider (R1, R2).

The invention relates to the technical field of nuclear magnetic resonance, and discloses a nuclear magnetic resonance preamplifier circuit which comprises a gating module and a first-stage amplification submodule. The gating signal end of the gating module is connected to the control end of the third switching tube and the control end of the fourth switching tube through a first resistor; a second power supply end is connected to a second node through a sixth resistor and a second inductor; the second node is grounded through the first switching tube; a second power supply end is connected to a second node through a sixth resistor and a second inductor; and the second node is also grounded through a fifth capacitor. A gating control signal is added on the basis of the low-noise amplifier, and bias voltage of the first switching tube is closed or opened in a radio-frequency transmitting mode and a radio-frequency receiving mode respectively, so that closing and working conversion time, namely recovery time, is prolonged.

The invention relates to a low-voltage operational amplifier for reducing system offset voltage, which comprises a folded cascode input module (101), a CLASSAB output-stage control circuit (102) and an output-stage module (103), and solves the problems of large system offset voltage, inaccurate output-stage quiescent current control, waste of dynamic power consumption and the like in the existing low-voltage CLASSAB operational amplifier. An output stage quiescent current error caused by a channel length modulation effect is improved, meanwhile, a second stage common-gate tube is added, the current matching of the first stage common-source common-gate tube is improved, the input offset voltage of the operational amplifier system is effectively reduced, and when large pull-sink current exists outside, current limiting is carried out on the CLASSAB output stage control circuit (102), so that the output stage quiescent current error caused by the channel length modulation effect is reduced. Compared with the prior art, the CLASSAB output-stage operational amplifier has the advantages that the internal maximum power consumption is limited, the heating value is reduced, the useless power consumption is reduced, and the application range of the CLASSAB output-stage operational amplifier in a low-voltage and high-precision circuit system is widened.

The invention discloses a ping-pong self-stabilization zero-loop ripple suppression precision operational amplifier, which comprises a high-frequency path and a low-frequency path, and is characterized in that the high-frequency path comprises a third transconductance amplifier Gm3 and a fourth transconductance amplifier Gm4; the low-frequency path comprises a first transconductance amplifier Gm1-Gm3, a second transconductance amplifier Gm1-Gm3, a first chopper Cop1-Cop2, a second chopper Cop1-Cop2 and a ping-pong self-stabilization zero ripple suppression loop, and the ping-pong self-stabilization zero ripple suppression loop is used for suppressing offset voltage and output ripple generated by the low-frequency path. The invention designs a ping-pong self-stabilizing zero ripple suppression feedback (AZCFB) loop, the self offset voltage of the ripple suppression loop is eliminated by adopting an automatic zeroing technology, and the residual offset is filtered by a chopper and a filter. In addition, a high-pass filter is used for eliminating the influence of AZCFB loop sampling node direct-current potential deviation on output ripples, and the purpose of restraining the output ripples is achieved.