128results about How to "Improved Gain Flatness" patented technology

The invention belongs to the field of radio frequency microwave integrated circuit design, in particular to a broadband high-gain-flatness power amplifier. The power amplifier mainly includes: an input matching network composed of a high coupling factor transformer and a capacitor resistor; a differential common-source driver amplifier with neutralization capacitance; an inter-stage matching network composed of high coupling factor transformers; a differential common-source power amplifier with neutralizing capacitance for power amplification; and an output matching network which is composed of a high-coupling-factor transformer and a load capacitor. The power amplifier adopts high-coupling-factor transformers in three-stage matching network. The in-band gain fluctuation of broadband is reduced by compensating three-stage matched gain fluctuation, which effectively solves the problem of poor gain flatness caused by large inter-stage matched gain fluctuation of traditional broadband power amplifiers and improves the gain at the same time. Compared with the prior art, the invention can significantly improve the gain flatness of the wideband power amplifier while realizing high gain.

The invention discloses a drive power amplifier with the adjustable gain of a 0.1-3GHz CMOS. The drive power amplifier comprises an input match circuit, an ultra-wideband drive stage amplifying circuit, a gain-adjustable amplifying circuit, an ultra-wideband power amplifying circuit and an output blocking circuit. A first ultra-wideband drive stage is used for achieving preceding-stage gain and ensuring ultra-wideband input match of the whole circuit. A gain control circuit is used for controlling power gain of wideband radio frequency signals and the good inter-ultra-wideband matching property. A third ultra-wideband drive power stage is used for ensuring large power output of the whole circuit and the good wideband output matching property. A three-stage stacking structure is combined with a compensation capacitance circuit, and the area of a chip is small. In the whole circuit, parameters of an adopted component can be determined according to indexes of items such as the whole circuit gain, the wideband and the output power, and therefore the adjustable gain, the high-linearity and the high drive power within the 0.1-3GHz can be achieved.

A series-fed E-shaped patch antenna array has co-polarized parasitic patches to improve aperture efficiency. Each of microstrip parasitic patches is inserted between a plurality of microstrip E-shaped patch antennas. The parasitic patches are co-polarized with the E-shaped patch antennas so that the current flows in the parasitic patches and the E-shaped patch antennas have the same polarity. Additional radiation from the co-polarized microstrip parasitic patches significantly improves gain flatness, gain and aperture efficiency due to offset resonance frequency.

The invention discloses an ultra-wideband monolithic microwave integrated low noise amplifier, which realizes an ultra wideband and ultralow noise. The ultra-wideband monolithic microwave integrated low noise amplifier comprises a primary amplification unit (1) and a secondary amplification unit (2). The ultra-wideband monolithic microwave integrated low noise amplifier is a full-on-chip monolithic microwave integrated circuit, and an enhanced field-effect transistor is taken as an amplifying tube. A multilevel feedback structure is adopted on a circuit structure. A feedback resistor not onlyserves as an alternating-current negative feedback, thereby realizing input and output matching, and constructing a noise cancellation structure; and the feedback resistor also serves as a direct-current divider resistor, thereby providing a direct-current bias and a drain end power supply for the amplifying tube. Moreover, back hole grounding is adopted for the amplifier, thereby greatly reducingthe grounding inductance effect. A design without an on-chip inductor is used, so that the chip area is saved. The ultra-wideband monolithic microwave integrated low noise amplifier is simple in structure and easy to integrate, and occupies a small chip area.

The invention discloses a conformal spherical antenna array which comprises a radome, an antenna array, a shield cover, a base plate and a supporting device. The antenna array is arranged on the base plate. The shield cover is located between the antenna array and the base plate. The antenna array is covered by the radome. The base plate is provided with an annular groove. The lower edge of the radome is inserted into the annular groove and is positioned by a locking positioning mechanism. The supporting device is arranged at the bottom of the base plate. The antenna array comprises a first skeleton, a second skeleton, a third skeleton and an antenna. The first skeleton, the second skeleton and the third skeleton are all arranged within the same ellipsoidal plane. The inclination angle of each skeleton is different. The first skeleton and the second skeleton are tangent to the ellipsoidal plane. The sphere tangent lines of the third skeleton and the second skeleton form a tangent angle a. The conformal spherical antenna array provided by the invention has the advantages of high antenna radiation uniformity, low production cost and stable structure.

The invention discloses an ultra-wideband miniaturized radio frequency module. An input signal passing a low pass filter A (1) and a limiter (2) and a calibration signal passing a single knife doublethrow switch A (3) are selected by a single knife double throw switch B (4), and then selected through a single knife four throw switch A (5); then power control is performed through a low noise amplifier A (6), a low noise amplifier B (7), a direct connector (8) and one of the four ways of a fixed attenuator; then power adjustment is performed through a single knife four throw switch B (10), a numerical attenuator (11) and an amplifier A (12); then selection is carried out by a single knife six throw switch A (13), and frequency selection is carried out through one of the six ways of a band-pass filter; and a local oscillator signal passes a mixer (26) and a low pass filter B (27) to obtain an intermediate frequency signal. The ultra-wideband miniaturized radio frequency module solves theproblems of the ultra-wideband low noise design, the gain flatness control, the anti-interference and the miniaturization.

The invention discloses an ultra-wideband planar monopole antenna. The ultra-wideband planar monopole antenna comprises a dielectric substrate, a monopole radiation patch, a lumped device and a grounding plate, wherein the monopole radiation patch is formed by loading a monopole antenna main body and a top end, a part, near to the grounding plate, of the monopole radiation patch employs a triangular corner and is mainly used for impedance matching of a high-frequency part. A lumped component loaded by the antenna main body is mainly used for reducing a working frequency band of the antenna andgain of a smooth antenna in the whole frequency band, a plurality of rectangular open-circuit branches are loaded at a top end of a monopole, the capacitance between the antenna and floor is improved, and the working frequency band of the antenna is further reduced. By loading the lumped component and additionally arranging open-circuit branches on ground, the antenna size is effectively reducedas well as favorable ultra-wideband characteristic is maintained, and the application of the antenna in the monitoring field is facilitated.

The invention relates to the technical field of short-wave wireless communication and provides a short-wave high-linearity balance structure power amplifier. The short-wave high-linearity balance structure power amplifier comprises an input Balun, two same amplification circuit modules, an adjustable DC bias circuit module and an output Balun, wherein radio frequency input signals are coupled to two balance signals having a phase difference of 180 degrees through the input Balun, the two balance signals are respectively input to the two amplification circuit modules, output signals of the two amplification circuit modules are coupled to single-signal output through the output Balun, and the adjustable DC bias circuit module is used for providing DC bias for the two amplification circuit modules; each amplification circuit modules comprises an amplification circuit and a negative feedback circuit, each amplification circuit is composed of two transistors through cascading by use of a common-emitter and common-base mode, each negative feedback circuit is composed of a directional coupler, and the negative feedback circuits are connected with the input ends and the output ends of the amplification circuits. The power amplifier employs a balance structure, is simple in structure and also has the advantages of high linearity and high output power.

The invention discloses a KU wave-band low noise amplifier. The KU wave-band low noise amplifier comprises a first-stage cascade-inductance-source-stage negative feedback structure, an inter-stage matching network and a second-stage cascade-inductance-source-stage negative feedback structure; the first-stage cascade-inductance-source-stage negative feedback structure is connected with the second-stage cascade-inductance-source-stage negative feedback structure through the inter-stage matching network. The KU wave-band low noise amplifier has the advantages that (1) the work frequency band ranges from 12 GHz to 18 GHz; (2) the minimum value of the gain (S21) is 20 dB, and the good gain flatness is achieved; (3) the noise factor of an input matching S11 and the noise factor of an output matching S22 are smaller than -10 dB in the work bandwidth; (4) K is larger than 1 in a wave band; in other words, the circuit meets the requirements of the unconditional stability.

These glasses incorporate a combination of F and Al2O3 to achieve even wider fluorescence and improved gain flatness. In addition, SPCVD incorporates large amounts of N into low-loss fiber whose high charge has an impact on rare earth behavior. The Surface Plasma Chemical Vapor Deposition (SPCVD) produces fiber preforms with high levels of F, Al2O3, and N. These heavily fluorinated glasses provide much broader Er3+ emission than Type I or Type II silica for enhanced multichannel amplifiers. SPCVD successfully fluorinates silica with losses below 5 dB / km and increased Er3+ emission width.

The invention discloses a low-noise frequency mixer circuit. The low-noise frequency mixer circuit comprises a noise elimination trans-conductance input stage, a switch mixing stage and an output load stage, wherein the noise elimination trans-conductance input stage receives a RF voltage signal and converts the RF voltage signal into a current signal; the switch mixing stage is controlled through a local oscillator LO to periodically reverse the current signal and convert the frequency into an intermediate frequency from a radio frequency to finish the frequency conversion; the output load stage carries out filter suppression on a high-frequency signal and converts the corresponding intermediate-frequency signal into an output IF voltage signal. The low-noise frequency mixer circuit improves the effective input trans-conductance of the trans-conductance stage through using a cross coupling method at the noise elimination trans-conductance input stage so as to lower the power consumption of the circuit and achieve low noise.

The invention designs an integrated circuit chip of a reconfigurable frequency mixer, in particular an integrated circuit chip of a dual frequency band reconfigurable frequency mixer, which is applied to two systems, namely advanced international mobile communication (IMT-Advanced) and ultra-wide band (UWB) communication. By adoption of an adjustable capacitor and a resistance network structure, reconfiguration between two frequency bands can be realized; compared with other frequency mixers reported at present, the circuit is arranged into a switch frequency selection tuning network; and the circuit can be switched between two working modes by adjusting an external control voltage; at the same time, the two frequency bands of the circuit can be optimized simultaneously by adjusting element parameters in the circuit. Factors, such as linearity, variable gain flatness, complexity, chip area, power consumption and the like, are taken into consideration, so the design compared with other reported technologies is improved greatly. The feasibility of the integrated circuit chip is tested in China by using a 0.13-millimeter mixed signal complementary metal-oxide-semiconductor process of SMIC Company.

The invention provides a reconfigurable ultra-broadband low noise amplifier with an active inductor, which has the characteristics of high gains, adjustable gains, small area, low noises and the like. The low noise amplifier comprises a parallel feedback amplifier, a Cascode amplifier and a common source amplifier fed back based on a fully differential floating active inductor, and an output buffering stage, wherein the parallel feedback amplifier adopts a resistor to replace a traditional spiral inductor to realize broadband input impedance matching and the area of a chip is reduced; by adopting the structure, the transconductance is increased so that the transconductance is changed into gmN+gmP from original gmN or gmP, and the noises of the amplifier are reduced. A middle amplification stage is composed of the Cascode amplifier and the common source amplifier so that the gains of the whole amplifier are increased. The active inductor is the fully differential floating active inductor and the whole amplifier only adopts one active inductor so that the area of the chip is greatly reduced; the size of an inductance value can be changed through adjusting bias voltage, and furthermore, the grains of the low noise amplifier are changed and the grains can be adjusted.

The invention discloses a single-end input and double-end output gain adjustable low noise amplifier. The amplifier comprises a single-end input end, a single-to-differential amplification circuit (100), a first level buffer circuit (200), a second level buffer circuit (300), a first differential output end and a second differential output end. The single-end input end is used for inputting single-end input signals; the single-to-differential amplification circuit (100) is used for carrying out differential amplification to the single-end input signals; the first level buffer circuit (200) is used for filtering and amplifying the differential signals output by the single-to-differential amplification circuit (100); the second level buffer circuit (300) is used for further amplifying and carrying out phase and amplitude adjustment to the differential signals output by the first level buffer circuit (200); and the first differential output end and the second differential output end are used for selectively outputting the differential output signals of the low noise amplifier. According to the amplifier, the circuit gain is adjustable; and output signal balance and gain flatness are realized.

The invention discloses a two-dimensional millimeter wave circularly-polarized wide-angle scanning phased-array antenna, and relates to the technical field of millimeter wave antennas. According to the technical scheme, an antenna radiation patch is connected with a rectangular parasitic patch through a high impedance matching microstrip line which is provided with a cross-carved equal length in the center and is used for carrying out impedance matching on the antenna, and a windmill-shaped microstrip radiation patch excitation equal-amplitude in-phase polarization orthogonal degenerate mode is manufactured on the symmetric center of a diagonal bisector of the corner of the antenna radiation patch; feed probes penetrate through the antenna dielectric layer and are connected with the antenna radiation patch through the four rectangular parasitic patches, the four feed probes 4 of each antenna unit feed through rotary feed structures which are equal in amplitude and sequentially differ by 90 degrees, and the windmill-shaped microstrip radiation patch is connected with rectangular blocks of the four rectangular parasitic patches of the four metallized probes for feed. feeding in equal-amplitude excitation with the phase difference of 90 degrees is performed in sequence to form circular polarization radiation, and the antenna arrays are arranged in a rectangular manner at equal intervals according to unit intervals to form an antenna array surface.

The invention provides a one-dimensional wide-angle scanning phased array based on a rectangular patch TM20 mode, and relates to the technical field of microwave antennas. The structure of the phasedarray provided by the invention is mainly composed of an array antenna patch, a feeding part and a dielectric substrate, and the array is composed of 8 identical units arranged at equal intervals. Since the performance of the phased array has a great relationship with the array units, the invention makes an improvement based on the rectangular patch TM20 mode, expands the unit beam, and further broadens the phased array scanning range. Under the premise of ensuring the same polarization in the scanning process, through miniaturization technology, the unit size is reduced, the unit spacing is increased to a certain extent, the mutual coupling effect among the units is reduced, and a good impedance matching effect in the beam scanning process is ensured.

A series-fed E-shaped patch antenna array has co-polarized parasitic patches to improve aperture efficiency. Each of microstrip parasitic patches is inserted between a plurality of microstrip E-shaped patch antennas. The parasitic patches are co-polarized with the E-shaped patch antennas so that the current flows in the parasitic patches and the E-shaped patch antennas have the same polarity. Additional radiation from the co-polarized microstrip parasitic patches significantly improves gain flatness, gain and aperture efficiency due to offset resonance frequency.

The invention discloses a multi-channel feedback type broadband low-noise amplifier which comprises an input module electrically connected with an input end RFin of the low-noise amplifier and used for receiving and processing an input signal of the low-noise amplifier; an amplification module electrically connected with the input module and is used for receiving and amplifying the signal output by the input module to obtain an amplified signal; and an output module electrically connected with the amplification module and the output end RFout of the low-noise amplifier, and is used for processing the amplified signal and outputting the processed amplified signal. According to the low-noise amplifier designed by the invention, the cascaded amplifying circuit is adopted. The problem that a low-noise amplifier achieves low noise in a wide frequency band and the problem that a broadband low-noise amplifier has gain roll-off in a high frequency are solved in different amplifying circuits, good noise and gain response in a broadband are achieved, meanwhile, the design pressure of each stage of circuit is relieved, and the performance performance of the whole amplifier is improved.

The invention discloses a broadband harmonic suppression amplifier, which belongs to the technical field of integrated circuits and comprises an input matching network, a broadband current multiplexing amplification network, a first active bias network, a harmonic suppression balance matching network, a broadband common-source amplification network, a second active bias network and an output matching network. The broadband current multiplexing and common-source amplification network is adopted, the grid-source RLC parallel negative feedback circuit is matched, the characteristics of broadband, high gain and low power consumption are achieved, the harmonic suppression balance matching network is adopted between stages, the harmonic suppression degree of the amplifier is improved, meanwhile, impedance matching and gain flatness can be considered, and the power consumption is reduced. The antenna has the advantages of wide working frequency band, low noise coefficient, high gain, high harmonic suppression degree, low power consumption and the like.

The invention relates to the technical field of microwave antennas, in particular to a broadband end-fire antenna on the basis of surface wave waveguide and high-impedance surfaces. The broadband end-fire antenna comprises a first dielectric substrate, a second dielectric substrate, a surface wave waveguide portion, a high-impedance surface portion and a surface wave exciter portion. The broadbandend-fire antenna which is a panel end-fire antenna has the advantages that end-fire effects can be realized by surface wave conduction and suppression functions of the surface wave waveguide and thehigh-impedance surfaces, and the broadband end-fire antenna is excellent in characteristics such as radiation gain, front-to-back ratio and gain flatness; two resonant modes in the surface wave waveguide can be excited, the high-impedance surfaces with the broad stop band characteristics are adopted, accordingly, the broadband end-fire antenna has a broadband function, and the relative central bandwidths can reach 33.5%; the panel antenna has the end-fire radiation performance and broad impedance bandwidth functions, and is simple in structure and easy to implement and integrate, and the performance of the antenna can be effectively enhanced when the broadband end-fire antenna is applied to radar, communication, remote sensing and measuring, electronic countermeasures and the like.

There is provided a wide-band amplifier circuit with improved gain flatness. The wide-band amplifier circuit includes a first resonant load unit connected to an operating power terminal, providing a preset first load, and forming a preset first resonant point, a second resonant load unit connected to the operating power terminal, providing a preset second load, and forming a second resonant point set to a frequency different from the first resonant point; a first amplification unit receiving operating power via the first load of the first resonant load unit, having an amplification band characteristic determined according to the first resonant point of the first resonant load unit, and amplifying an input signal; and a second amplification unit receiving operating power via the second load, having an amplification band characteristic determined according to the second resonant point, and amplifying an input signal from the first amplification unit.

The invention relates to a short-wave pre-and-post-selector, which comprises a digital control circuit, transmitting-receiving switching circuits, band switching circuits, frequency hopping filters, a decoder, a broadband low noise amplifier and a receiving protection circuit, wherein the digital control circuit is electrically connected with an external short-wave radio station control unit through a control interface; serial codes sent by the short-wave radio station control unit are received by the digital control circuit and converted into parallel tuning codes respectively used for controlling the frequency hopping filters, the band switching circuits and the transmitting-receiving switching circuits so as to realize transmission on carrier signals different in frequency point and rapidly perform switching on carrier frequencies of useful signals; the transmitting-receiving switching circuits comprise a first transmitting-receiving switching circuit, a second transmitting-receiving switching circuit, a third transmitting-receiving switching circuit and a fourth transmitting-receiving switching circuit; the band switching circuits comprise a first band switching circuit and a second band switching circuit; the frequency hopping filters comprise a first frequency hopping filter and a second frequency hopping filter. The short-wave pre-and-post-selector disclosed by the invention has the advantages of being reasonable in structure, stable and reliable to use, strong in anti-jamming capability, low in cost, simple to control, fast in frequency hopping speed, low in power consumption, small in bottom noise and the like.

The invention discloses a broadband big power test clamp. The broadband big power test clamp comprises a circuit sheet fixed on a structure member; a microwave coaxial connector is welded on the circuit sheet through an insulator to form a microwave signal path; an impedance conversion line, a DC offset line and a grounding line are manufactured on a circuit sheet; the DC power supply pedestal is welded on the circuit sheet through a lead; chip-type microwave broadband capacitors are arranged on an input end and an output end of the clamp; a filtering capacitor is connected between the DC offset line and the grounding line of the circuit sheet through a scolding tin welding mode; and a chip-type resistor and an electrolytic capacitor are arranged on the circuit sheet through the soldering tin welding mode. Compared with the prior art, the beneficial effects of the broadband big power test clamp are that: through analogue simulation of ADS software, an in-band gain sink of the broadband big power test clamp can be effectively eliminated and the gain flatness can be improved. The broadband big power test clamp can effectively inhibit the in-band sink of the broadband big power test clamp and improves the in-band gain flatness.

The invention relates to the technical field of metasurface antennas, in particular to an open rectangular ring loaded microstrip slot coupling metasurface antenna which comprises a metasurface structure layer and a feed grounding layer. The metasurface structure layer comprises a metasurface dielectric substrate, an open rectangular ring and a patch layer unit, and the open rectangular ring and the patch layer unit are arranged on the surface of the metasurface dielectric substrate. The feed grounding layer comprises a feed medium substrate, a grounding metal plate and a metal feed microstrip line. The antenna meets the characteristics of low profile, wide band, wide beam width and low profile, and can be applied to many fields of mobile communication systems, radar navigation, satellite communication and the like.

The invention discloses a conformal spherical antenna array with a good shielding effect. The antenna array comprises a radome (13), an antenna array (14), a shield cover (15) and a base plate (16). The antenna array (14) is arranged on the base plate (16). The shield cover (15) is located between the antenna array (14) and the base plate (16). The antenna array (14) is covered by the radome (13). The base plate (16) is provided with an annular groove (18). The lower edge of the radome (13) is inserted into the annular groove (18) and is positioned by a locking positioning mechanism. The antenna array (14) comprises a first skeleton (1), a second skeleton (2), a third skeleton (3), an antenna (11) and a positioning device (10). The conformal spherical antenna array provided by the invention has the advantages of high antenna radiation uniformity, high structural strength and good shielding effect.

The invention relates to a shortwave prognostic selector control system. The shortwave prognostic selector control system comprises a single chip microcomputer control circuit, transceiving conversion circuits, band switching circuits, frequency hopping filters, a decoder, a broadband low-noise amplifier and a receiving protection circuit; the single chip microcomputer control circuit is electrically connected to an external short-wave radio station main control circuit, the transceiving conversion circuits, the band switching circuits, the frequency hopping filters and the decoder separately; the transceiving conversion circuits comprise first, second, third and fourth transceiving conversion circuits; the band switching circuits comprise first and second band switching circuits; the frequency hopping filters comprise first and second frequency hopping filters; the decoder is electrically connected to the single chip microcomputer control circuit, and correspondingly connected to the first and second frequency hopping filters separately through a relay; and the receiving protection circuit is electrically connected to the radio-frequency input end of the pre-selector, and electrically connected with the third transceiving conversion circuit at the same time. The shortwave prognostic selector control system disclosed by the invention is simple in structural design, steady to use, high in anti-interference capability, simple to control, rapid in frequency hopping speed, and low in power consumption and bottom noise.

The invention belongs to a hardware composition unit of a borehole radar logging system and particularly relates to a borehole radar stepping frequency-controllable gain receiver leading end. According to the borehole radar stepping frequency-controllable gain receiver leading end, real-time adjustment control on a gain stepping value is realized through a single-chip microcomputer control circuit according to an output signal value, and an opening-closing-loop-controllable gain control function is further provided. At least twice of down conversion processing on an input signal is carried out through a mixer and a filter, frequency bandwidth of a finally-outputted intermediate frequency signal is made to be quite narrow, instantaneous bandwidth corresponding to a receiver is made to be quite small, noise interference is effectively inhibited, and system sensitivity is improved. For a gain control unit, a gain balance device is utilized to realize high gain flatness, -13dB-95dB linear gain control is finally provided, and 0.5dB-16dB gain stepping is realized. The borehole radar stepping frequency-controllable gain receiver leading end is advantaged in that unsynchronized transceiving modes are realized, gain flatness is high, gain control is convenient, and the borehole radar stepping frequency-controllable gain receiver leading end is suitable for a receiver system with a quite great reception signal scope.

The invention relates to a PCB (Printed Circuit Board) dual-frequency communication antenna. The PCB dual-frequency communication antenna comprises a PCB, a radiating body, a feed-in part and a grounding part, wherein the radiating body and the feed-in part are embedded into the front side of the PCB; the radiating body is connected with the feed-in part, and is used for receiving and transmitting an electromagnetic wave signal; the grounding part is embedded into the back side of the PCB, and is positioned on the same side as the feed-in part. In the PCB dual-frequency communication antenna, a PCB dual-ring series-connection structure is adopted, so that 2.4G and 5.8G are designed integrally, and the antenna is minimized; the working bandwidth of the antenna is extended by an arc-shaped recess between a radiating body projection and a floor, and high gain flatness is achieved; a printed molding antenna technology is adopted, so that the antenna is easy to machine.

The invention discloses an S wave band GaN MMIC low noise amplifier. The circuit structure includes a first-stage field effect transistor amplifier, an input matching network, a first-stage gate biasnetwork, a first-stage drain resistor, a first-stage drain bias network, an inter-stage matching network, a second-stage gate resistor, a second-stage field effect transistor amplifier, an output-stage matching network, a second-stage drain bias network, a second-stage drain resistor and a second-stage gate bias network are included. The negative feedback network formed by the resistor enhances the stability of the circuit, adjusts the gain of the circuit, and improves the linearity of the low-noise amplifier. Performance of large radio frequency input signals, low noise coefficient and good gain flatness in a working band of the low-noise amplifier can be realized.