KU wave-band low noise amplifier

A low-noise amplifier and band technology, applied in the direction of amplifiers, high-frequency amplifiers, power amplifiers, etc., can solve problems such as inability to work effectively, and achieve the effect of performance balance and optimization

Active Publication Date: 2017-05-31
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This circuit is composed of transistor devices based on the traditional Si-based cmos process, but it cannot work effectively in the KU band

Method used

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  • KU wave-band low noise amplifier
  • KU wave-band low noise amplifier
  • KU wave-band low noise amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Such as Figure 5 As shown, the KU-band low-noise amplifier includes a first-stage cascode inductance source-stage negative feedback structure, an interstage matching network, a second-stage cascode inductance source-stage negative feedback structure, and the first-stage The cascode cascade inductor source-level negative feedback structure is connected to the second-level cascode cascode inductor source-level negative feedback structure through the inter-stage matching network; the first-level cascode cascode inductor source-level negative feedback structure The structure includes an input matching network, a first-stage cascode structure amplifying circuit, and the input matching network is connected to the first-stage cascode structure amplifying circuit to realize that the noise figure of the low-noise amplifier is less than 1.2dB; the second-stage common-source The source-level negative feedback structure of the cascaded inductance includes the second cascode amplif...

Embodiment 2

[0048] Such as Figure 5 , 6 As shown, the KU-band low-noise amplifier includes a first-stage cascode inductance source-stage negative feedback structure, an interstage matching network, a second-stage cascode inductance source-stage negative feedback structure, and the first-stage The cascode cascade inductor source-level negative feedback structure is connected to the second-level cascode cascode inductor source-level negative feedback structure through the inter-stage matching network; the first-level cascode cascode inductor source-level negative feedback structure The structure includes an input matching network, a first-stage cascode structure amplifying circuit, and the input matching network is connected to the first-stage cascode structure amplifying circuit to realize that the noise figure of the low-noise amplifier is less than 1.2dB; the second-stage common-source The source-level negative feedback structure of the cascaded inductance includes the second cascode a...

Embodiment 3

[0055] Such as Figure 5 , 6 As shown, the KU-band low-noise amplifier has a circuit structure as in Embodiment 2, the first common-source HEMT transistor T1, the first common-gate HEMT transistor T2, the second common-source HEMT transistor T4, and the second common-gate HEMT transistor T4. Transistors T3 are Schottky gate

[0056] InAs / AlSb HEMTs.

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Abstract

The invention discloses a KU wave-band low noise amplifier. The KU wave-band low noise amplifier comprises a first-stage cascade-inductance-source-stage negative feedback structure, an inter-stage matching network and a second-stage cascade-inductance-source-stage negative feedback structure; the first-stage cascade-inductance-source-stage negative feedback structure is connected with the second-stage cascade-inductance-source-stage negative feedback structure through the inter-stage matching network. The KU wave-band low noise amplifier has the advantages that (1) the work frequency band ranges from 12 GHz to 18 GHz; (2) the minimum value of the gain (S21) is 20 dB, and the good gain flatness is achieved; (3) the noise factor of an input matching S11 and the noise factor of an output matching S22 are smaller than -10 dB in the work bandwidth; (4) K is larger than 1 in a wave band; in other words, the circuit meets the requirements of the unconditional stability.

Description

technical field [0001] The invention relates to a low noise amplifier, in particular to a KU band low noise amplifier. Background technique [0002] The RF receiver is located at the next stage of the antenna, and is responsible for receiving the signal and amplifying, mixing, filtering, etc. the signal and then passing it to the baseband for processing. figure 1 It is a structural block diagram of a traditional super extrapolation receiver, in which the low noise amplifier (LNA) is located at the front end of the receiver, which is the first active circuit in the radio frequency receiving system, which directly receives the useful signal from the antenna, and can effectively Therefore, the LNA is a very critical module of the entire radio frequency receiving system, which directly determines the signal sensitivity of the receiver. When the received signal is small, the LNA can amplify the useful signal with very little additional noise. When the input signal is large, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/26H03F1/56H03F3/19H03F3/24
CPCH03F1/26H03F1/56H03F3/19H03F3/24H03F2200/372H03F2200/451
Inventor 关赫杜永乾张双喜
Owner NORTHWESTERN POLYTECHNICAL UNIV
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