The invention relates to the technical field of
semiconductor chip preparation, in particular to a VCSEL
chip and a manufacturing method thereof, and the VCSEL
chip comprises a substrate, an epitaxial layer, an
oxide layer, a passive film and a P-type
electrode. During manufacturing, a groove and a mesa platform are formed on an epitaxial layer, a
diffusion barrier layer is manufactured in the groove to prevent subsequent atoms from diffusing through an active region and an
oxide layer, and then
chemical vapor deposition is adopted to perform atom
diffusion in the horizontal direction from the side surface through the groove, so that a
diffusion region is formed at the top of the P-type DBR in the inner and
peripheral regions of the groove, and the reflection capability is lost. The
front edge of the diffusion area formed by side diffusion is a cylindrical surface, and the diffusion depth is easy to control; and through side surface atom diffusion, the non-destructive P-type DBR contact area between the
front edge of the diffusion region and the vertical direction of the light outlet hole is greatly increased, so that the VCSEL chip can still work in a single
transverse mode under the condition of relatively high output power, and the gas detection range or the
signal sensitivity can be increased.