A method and dedicated device for
ultrasonic detection of microcracks in
semiconductor silicon rings are disclosed, specifically comprising: selecting a piezoelectric
crystal with a size of 6–10 mm and a frequency range of 1 MHz–15 MHz for a
water immersion focusing ultrasonic probe; calculating the required incident angle for the ultrasonic
waves to refract into transverse
waves, surface
waves, and creeping waves at the water /
silicon interface; adjusting multiple sets of ultrasonic probes to emit ultrasonic waves at different tilt angles according to the incident angle value; the ultrasonic waves are refracted on the surface of the
semiconductor silicon ring, resulting in waveform conversion; the refracted waves excited by ultrasonic waves at different incident angles in the
semiconductor silicon ring propagate in the silicon
wafer along a certain propagation path; when they encounter a defect,
ultrasonic scattering occurs, and the
reflected waves in the scattering return along the original path and are received by the ultrasonic probe; the ultrasonic probe converts the reflected wave
signal into a detection electrical
signal and transmits it to the ultrasonic instrument; the ultrasonic instrument uploads the result
signal to an industrial control computer; the imaging
software in the industrial control computer images the detection results and displays the distribution information of the microcracks in the entire semiconductor silicon
wafer.