38 results about "Broadband power amplifier" patented technology

The invention discloses a broadband power amplifier with an output reconfigurable network, and relates to the technical field of microelectronics, the broadband power amplifier with the output reconfigurable network adopts a three-stage amplification circuit with a gate width ratio of 1: 2: 8, and signal pre-amplification and gain improvement are realized through the first two stages of amplifiers; the last-stage eight-tracheid parallel structure outputs saturated power under high-voltage power supply and realizes power additional efficiency; the output reconfigurable network is controlled by a first switch and a second switch, the first switch is turned off and the second switch is turned on in a high-power mode, so that a compensation microstrip line is grounded to form a fundamental wave matching branch knot, the loss of a harmonic suppression network is avoided, and high-efficiency output is guaranteed; in a low-power mode, the first switch is switched on, the second switch is switched off, the first LC resonance unit and the second LC resonance unit jointly form a band-stop filtering network, secondary and third harmonic impedance is adjusted to be in a near-short-circuit state, so that generation of higher harmonics is restrained, phase distortion is offset through the compensation microstrip line, and the integrity of fundamental wave signals is maintained.

A broadband Doherty power amplifier is provided, which includes a power divider, a carrier power amplifier circuit, a peak power amplifier circuit, and a load modulation network. The carrier power amplifier circuit includes a carrier input matching circuit, a carrier power amplifier, and a carrier output matching circuit. The peak power amplifier circuit includes a peak input matching circuit, a peak power amplifier and a peak output matching circuit. A resistance value of a system load is ZL. An output impedance of the carrier output matching circuit is Zm and meets Zm=ZL(n+1). An output impedance of the peak output matching circuit is Zp and meets Zp=ZL(n+1) / n. The load modulation network is configured to set an impedance of a combination point to be ZQ, whose resistance value is ZL. A method of implementing a broadband Doherty power amplifier is further provided.

The embodiment of the invention provides a gallium nitride device, a preparation method and a chip. The gallium nitride device comprises an epitaxial layer, a source electrode, a drain electrode and a grid electrode, the drain electrode and the epitaxial layer form Schottky contact and ohmic contact distributed at intervals in an array mode, the electric field distribution on one side of the drain electrode is improved, the output capacitance of the gallium nitride device is reduced, the breakdown voltage and the frequency gain characteristic of the gallium nitride device are improved, and therefore the gallium nitride device is suitable for a broadband power amplifier and a higher frequency range. The problem that a scheme for improving the breakdown voltage of a device from the perspective of reducing electric leakage or modulating electric field distribution in the prior art is not suitable for a communication system of a high-frequency end is solved.

The invention provides a waveform agility high-power microwave generation system based on time reversal and a working method. The system comprises a computer, an arbitrary waveform generator, a first broadband power amplifier, m second broadband power amplifiers, a first time reversal pulse compression cavity, m second time reversal pulse compression cavities, a power divider, a high-speed sampling oscilloscope, m phase shifters, m directional couplers and m radiation antennas. The computer is connected with the arbitrary waveform generator, the high-speed sampling oscilloscope, the phase shifter and the directional coupler; the arbitrary waveform generator is connected with the high-speed sampling oscilloscope through the first time reversal pulse compression cavity on one hand, and is connected with an input port of the power divider through the first broadband power amplifier on the other hand. And m output ports of the power divider are sequentially connected with the radiating antenna through the corresponding second broadband power amplifier, the second time reversal pulse compression cavity, the phase shifter, the directional coupler and the radiating antenna. According to the invention, high-universality broadband internal waveform agility high-power microwave pulse generation can be realized.

The present invention provides a high-speed multi-level quantum phase drive circuit based on radio frequency transistors, comprising a random signal generator, a plurality of high-speed level converters respectively connected to the output ends of the random signal generator, and a plurality of radio frequency transistors and their resistor network units respectively connected to the output ends of the high-speed level converters; the random signal generator generates a random coding signal according to random coding logic, the random coding signal is transmitted to the high-speed level converter, and the high-speed level converter converts the random coding signal into a low-voltage positive emitter coupled logic level. The low-voltage positive emitter coupled logic level drives the corresponding radio frequency transistor to conduct, and the radio frequency transistor outputs a level of corresponding amplitude. At any time, only one radio frequency transistor is conducted. The advantages of the present invention are: the power amplification of the level signal is achieved by using the parallel connection of radio frequency transistors instead of a broadband power amplifier, which simplifies the design difficulty of the quantum phase drive circuit and greatly reduces the cost.

A broadband Doherty power amplifier is disclosed. A Doherty power amplifier includes a main power amplifier and a peaking amplifier. In contrast to conventional approaches that combine outputs from the main and peaking amplifiers before an impedance transformation circuit, the Doherty power amplifier combines the outputs after an impedance transformation circuit in the peaking amplifier output path. This eliminates, or at least reduces, a possible impedance step down and corresponding impedance step up for the main output path. Reduction or elimination of such a step down and step up reduces insertion loss and allows increased efficiency at the first efficiency peak, as well as improving the fractional bandwidth of the Doherty power amplifier.

The invention belongs to the field of broadband power amplifiers, and particularly relates to a broadband impedance converter. The circuit comprises an input impedance converter, an input matching unit, a driving power amplifier, an inter-stage matching unit, a final-stage power amplifier and an output impedance converter. According to the invention, based on the HBT technology, coupling among multiple layers of metal is utilized, so that an ultra-wideband impedance converter is realized; the broadband impedance transformer can provide a required load line for the power amplifier in a very wide frequency band range; the broadband impedance converter can simplify the input matching of the ultra-wideband power amplifier and reduce the design complexity. Based on the impedance transformer and the ultra-wideband power amplifier structure, the designed wideband amplifier is high in bandwidth, high in efficiency, simple in design and small in area.

A method for operating a plasma processing system includes determining a first frequency for powering a first plasma within a plasma processing chamber. The method includes generating, at a broadband power amplifier, a first amplified RF signal having the first frequency. The method includes supplying the first amplified RF signal to process a substrate arranged in the plasma processing chamber using a first plasma process including the first plasma. The method includes determining a second frequency for powering a second plasma within the plasma processing chamber. The method includes generating, at the broadband power amplifier, a second amplified RF signal having the second frequency. The method includes supplying the second amplified RF signal to process the substrate arranged in the plasma processing chamber using a second plasma process including the second plasma.

The utility model relates to a power amplifier assembly, in particular to a miniaturized split type two-way broadband power amplifier assembly, which comprises an aluminum shell, a power division module shell, two power amplifier module shells and a power supply control device are fixed in an inner cavity of the aluminum shell, a power distribution module is fixed in the power division module shell, a first cover plate is fixed on the power division module shell, and a second cover plate is fixed on the power division module shell. A power amplification module is fixed in the power amplification module shell, a second cover plate is fixed on the power amplification module shell, a third cover plate is fixed above the second cover plate on the power amplification module shell, and a fourth cover plate is fixed above the first cover plate and the third cover plate on the aluminum shell; according to the technical scheme provided by the utility model, the defects that the size is large, the weight is heavy and the power amplification module is inconvenient to replace in the prior art can be effectively overcome.

The invention discloses a broadband power amplifier based on a distributed Balun structure, which comprises an input matching network, a first-stage amplifier, an inter-stage matching network, a second-stage amplifier and a distributed Balun parallel transmission line structure which are connected in sequence, the function of converting differential signals into single-end signals and optimal load matching are achieved through a distributed Balun parallel transmission line structure, the amplifier can achieve broadband load matching and good output power and efficiency in a high-frequency band, meanwhile, parallel transmission lines are additionally introduced, and the overcurrent capacity of an output matching network is improved.

A broadband Doherty power amplifier is disclosed. The Doherty power amplifier includes a main power amplifier and a peak amplifier. Compared to the conventional method of combining the outputs of the main and peak amplifiers before an impedance transformation circuit, this Doherty power amplifier combines the outputs after an impedance transformation circuit in the peak amplifier output path. This eliminates or at least reduces the possible impedance step drop and corresponding impedance step rise for the main output path. This reduction or elimination of the step drop and rise reduces insertion loss and allows for increased efficiency at the first efficiency peak, thus improving the fractional bandwidth of the Doherty power amplifier.

The invention discloses an efficient broadband power amplifier combining parasitic compensation and harmonic control technologies, which comprises an input matching network, a grid bias network, a parallel resonance stabilization network, a field effect transistor, a parasitic compensation network, a harmonic control network, a drain bias network and an output matching network, the design of an input and output matching network is realized by adopting a step type matching structure, the circuit bandwidth is expanded, the output efficiency of the power amplifier is improved by designing a parasitic compensation network, meanwhile, a harmonic control network is designed, and second and third harmonics of the power amplifier are suppressed by utilizing the harmonic control network, so that after being tuned by the harmonic network, a radio-frequency signal is transmitted to the power amplifier. The second harmonic power and the third harmonic power are obviously reduced, so that the harmonic power is converted into fundamental power, the output power is increased, the output efficiency is improved, the circuit structure enables the power amplifier to obtain high-efficiency and high-power capabilities in a broadband, and the circuit structure can be popularized and applied to a 5G wireless communication system.

The utility model relates to the field of radio frequency amplification, and discloses an all-solid-state short-wave broadband power amplifier, which comprises a controller, broadband power modules, a three-way distributor and a three-way synthesizer, the three-way distributor, the three broadband power modules and the three-way synthesizer are connected in sequence, the controller is connected with the broadband power modules and a directional coupler, and the directional coupler is connected with the controller. The input port of the three-way distributor is connected with an input signal. According to the utility model, the input signals are distributed and synthesized, and then are dynamically adjusted through the controller, so that the effects of realizing full-band coverage and guaranteeing the quality of full-band signals without connecting a plurality of traditional narrow-band devices in parallel are achieved, and the requirements of the fields of short-wave communication and the like on broadband high-power signals are met.

The application discloses a broadband microwave solid-state power amplifier design method based on a reconfigurable matching network, and belongs to the technical field of microwave power amplifier design. The method acquires transistor model parameters and a target working frequency band, constructs an initial topology of a reconfigurable matching network containing tunable element nodes and switch switching paths, performs discretization sampling on the target frequency band to obtain a plurality of key frequency points, dynamically adjusts element values and switch on-off states for each key frequency point through an iterative search algorithm to generate a corresponding power matching parameter set, compares the power matching parameter sets of adjacent key frequency points in terms of difference degree, identifies parameter jump intervals with a difference degree exceeding a tolerance threshold, positions mismatch element nodes according to the parameter jump intervals, performs a switch path reconstruction operation, and generates a broadband matching parameter sequence. The application can effectively solve the performance deterioration problem of a broadband power amplifier matching network caused by parameter mutation when working across frequency bands.

The invention provides a harmonic filter integrated in an ultra-short wave power amplifier in a matching manner by using a load traction technology, which comprises the following steps: setting different frequency points for a broadband power amplifier, and determining target impedance values corresponding to the different frequency points based on a preset test condition by combining the load traction technology; determining an input impedance network of the harmonic filter corresponding to the target impedance value according to the target impedance value, and matching an output transmission line corresponding to the input impedance network through impedance conversion by adopting a multi-order elliptical low-pass network model; an elliptical low-pass model is arranged in the harmonic filter, and a transmission zero point is generated through parallel resonance to suppress harmonic waves. According to the method disclosed by the invention, a module cascade matching joint debugging link can be omitted to the greatest extent, functional indexes of the module assembly are correspondingly improved, the volume space is saved, the integrated design is realized, the application, installation and operation are simple and convenient, and the performance is stable and reliable.

This utility model relates to the field of radio frequency communication technology and discloses a multi-band broadband power amplifier module, including a single-chip module, a thermal management module, and a power management module. The single-chip module integrates a dynamic broadband matching module, a multi-stage push-pull amplification module, and a digital predistortion correction module. The output terminal of the dynamic broadband matching module is electrically connected to the input terminal of the multi-stage push-pull amplification module, and the output terminal of the multi-stage push-pull amplification module is electrically connected to the input terminal of the digital predistortion correction module. The output terminal of the digital predistortion correction module is electrically connected to the input terminal of the dynamic broadband matching module. The single-chip module is bidirectionally electrically connected to the thermal management module. In this utility model, by adopting an integrated design, the dynamic broadband matching module, the multi-stage push-pull amplification module, and the digital predistortion correction module are integrated onto a single chip, significantly reducing the overall size, lowering production costs, and improving power amplification efficiency.

The invention discloses a limited water area transfer function response low-frequency broadband measurement method and system. The measurement method comprises the following steps: firstly, constructing a broadband frequency modulation signal in a negative number time domain, expanding a transfer function system formed by a transmitting transducer and a hydrophone to a negative frequency domain according to a relation between time and frequency, and then processing frequency response of a transfer function by utilizing prior information of the frequency response of the transfer function and combining a signal processing technology. And obtaining a transfer function under a free field condition. The measuring system comprises a control system, a low-frequency transmitting transducer, a hydrophone, an arbitrary function transmitter, a broadband power amplifier, a current sampler, a filter and the like. The time signal is constructed in the negative time domain, and the measurement frequency of the limited water area transfer function is expanded to the low frequency band by combining the prior information of the underwater acoustic parameters of the transmitting transducer and the hydrophone, so that the measurement of the lowest 1Hz low-frequency transfer function can be realized, and the method can be well applied to the measurement of the underwater electroacoustic parameters of the transducer and the hydrophone.

This invention provides an ultra-wideband Doherty power amplifier system and control method, comprising a control layer, a physical layer, and an optimization layer. The physical layer employs three parallel gallium nitride high electron mobility transistors, combined with a broadband collaborative synthesis network of a multilayer PCB planar transformer synthesizer with a leakage inductance resonant parasitic absorption mechanism, to achieve bandwidth expansion. The optimization layer introduces an improved MOEA / D algorithm with group delay flatness constraints. The control layer uses an FPGA-embedded model to assist in iterative learning and control of the ILC unit. This invention effectively solves the nonlinear divergence problem caused by strong physical-control coupling in a three-channel amplifier module architecture within the ultra-wideband range, simultaneously achieving high back-off efficiency and fast, stable convergence of the digital predistortion algorithm in the 0.6–4.9 GHz frequency band.

The invention provides a rapid detection device and method for evaluating the fatigue life of an aluminum alloy welding seam, and relates to the technical field of fatigue detection.The device comprises an ultrasonic excitation and acquisition module, a signal processing module and a signal processing module, the ultrasonic transducer is configured to inject a group of high-energy and continuous-frequency-sweeping ultrasonic excitation signals into a welding seam; the receiver and the high-frequency piezoelectric probe are integrated, and the receiver is used for synchronously collecting a first ultrasonic response signal modulated by micro damage in the welding seam; the feature extraction module is configured to demodulate a high-order harmonic component caused by material fatigue damage from the first ultrasonic response signal; the relative energy ratio of the high-order harmonic component to the fundamental component is calculated, and a nonlinear resonance spectrum distortion factor is generated; a first fatigue damage physical model is embedded in the service life evaluation module, and the service life evaluation module is configured to calculate and output the first residual fatigue service life of the to-be-detected aluminum alloy welding seam by taking the nonlinear resonance spectrum distortion factor as an input parameter.

The invention discloses a millimeter wave broadband power amplifier and communication system based on transconductance enhancement stacked common-gate input. The millimeter wave broadband power amplifier and communication system comprises an input matching circuit which is composed of an input transformer, a first capacitor and a second capacitor, wherein the first capacitor and the second capacitor are connected to the primary side and the secondary side of the input transformer in parallel; the output matching network is composed of an output transformer, an eleventh capacitor and a twelfth capacitor, wherein the eleventh capacitor and the twelfth capacitor are connected in parallel. The inter-stage matching network is composed of an inter-stage transformer, a seventh capacitor, an eighth capacitor and a fourth resistor, wherein the seventh capacitor and the eighth capacitor are connected to the primary stage and the secondary stage of the inter-stage transformer in parallel. A secondary coil of the input matching network is connected with an input end of the first amplifier, an output end of the first amplifier is connected with a primary coil of the inter-stage matching network, a secondary coil of the inter-stage matching network is connected with an input end of the second amplifier, and an output end of the second amplifier is connected with a primary coil of the output matching network; the first amplifier adopts a transconductance-enhanced stacked common-gate architecture, and the second amplifier adopts a common-source architecture with a cross-coupling capacitor.

The invention discloses a high-linearity millimeter wave broadband power amplifier based on a cross cold field effect transistor pair, which belongs to the technical field of wireless communication, and comprises a linearizer consisting of a self-adaptive double-voltage path biasing circuit and a cross cold field effect transistor pair, a driving stage module and a power stage module, an input matching network, an inter-stage matching network and an output matching network; the broadband OP1dB performance of the millimeter wave power amplifier can be improved by a linearizer technology combining a self-adaptive dual-voltage path biasing circuit and a cross cold field effect transistor pair and by adjusting the gain pole positions of an input matching network, an inter-stage matching network and an output matching network; and good broadband OP1dB performance can be realized in both small signal performance and large signal performance.

The application provides a rapid detection device and method for evaluating aluminum alloy weld fatigue life, and relates to the technical field of fatigue detection. The device comprises: an ultrasonic excitation and collection module, which comprises a broadband power amplifier and a high-frequency piezoelectric probe, is used for contacting an aluminum alloy weld to be detected, and is configured to inject a group of high-energy and continuously swept-frequency ultrasonic excitation signals into the weld; a receiver, which is integrally integrated with the high-frequency piezoelectric probe, is used for synchronously collecting a first ultrasonic response signal modulated by internal micro-damage of the weld; a feature extraction module is configured to demodulate a high-order harmonic component caused by material fatigue damage from the first ultrasonic response signal; the relative energy ratio of the high-order harmonic component and a fundamental wave component is calculated, a nonlinear resonance spectrum distortion factor is generated; and a life evaluation module, which is embedded with a first fatigue damage physical model, is configured to take the nonlinear resonance spectrum distortion factor as an input parameter, calculate and output a first residual fatigue life of the aluminum alloy weld to be detected.

This invention discloses a silicon-based ultra-wideband power amplifier in the millimeter-wave band. The silicon-based ultra-wideband power amplifier adopts a three-stage cascaded structure, including a wideband input matching network, a driver stage amplifier network on the signal input side, an interstage matching network, a power stage amplifier network on the signal output side, and a wideband output matching network. The driver stage amplifier network is connected to the GSG input probe on the input side via the input matching network. The interstage matching network connects the driver stage amplifier network and the power stage amplifier network. The power stage amplifier network is connected to the GSG output probe on the output side via the wideband output matching network. This invention meets the requirements of multi-band mobile communication by extending bandwidth, and reduces costs using silicon-based technology while meeting output power and efficiency requirements.

The application discloses a kind of wideband power amplifiers based on transformer coupling, it is related to the technical field of radio frequency integrated circuit, and the matching network based on transformer coupling effectively expands the working bandwidth of power amplifier.The proposed wideband power amplifier adopts two-stage structure, both stages adopt pseudo-differential cascode structure, the driving stage adopts neutralizing capacitor technology to improve circuit stability, the power stage adopts thick gate transistor to improve gain, the input matching adopts the way that common-source stage gate inductance is coupled with common-gate common-source stage interstage inductance and common-source stage parallel inductance respectively, and the interstage and output broadband matching is realized through magnetic coupling resonant cavity structure, so as to realize the performance of wideband high gain of power amplifier.

The invention discloses a three-inductor stray capacitance counteracting network, a broadband power amplifier, a chip and equipment, and the three-inductor stray capacitance counteracting network is arranged at an intermediate node of a differential stacked transistor and is used for eliminating the influence of the equivalent stray capacitance of the differential stacked transistor; comprising a first inductor, a second inductor and a third inductor, the first inductor and the second inductor are matched and are respectively connected in series between the output end of the upper-layer transistor and the input end of the lower-layer transistor, and two ends of the third inductor are respectively connected to the output end of the upper-layer transistor or the input end of the lower-layer transistor. According to the three-inductor parasitic cancellation technology provided by the invention, the output power, the efficiency and the bandwidth of the power amplifier of the wireless communication system are effectively improved by increasing the impedance from a signal path to the ground, reducing the signal loss and eliminating the influence caused by the parasitic capacitance of the transistor at an intermediate node of the differential stacked transistor. The method can be widely applied to the field of radio frequency integrated circuit design.

This invention discloses a multi-octave broadband power amplifier, comprising: an LC input matching network, a drive network, an interstage high-order matching network, an amplification network, and an output high-order matching network connected in sequence. According to this invention, the multi-octave broadband power amplifier reduces the area of ​​the interstage and output matching networks by configuring the LC input matching network, the interstage high-order matching network, and the output high-order matching network, thereby achieving multi-octave bandwidth within the limited area of ​​the SOC chip. Simultaneously, the configuration of the interstage and output high-order matching networks allows for a higher order of the matching circuit in the impedance matching of the fundamental signal, resulting in better signal gain and flatness of the power amplifier over a wider bandwidth.

This application relates to an impedance determination method, apparatus, broadband power amplifier, storage medium, and program product for a broadband power amplifier. The impedance determination method determines the optimal impedance of the power amplifier tube's package surface based on the performance parameters of the power amplifier tube and the reactance parameters of the broadband power amplifier. It then applies a pull-type processing method to the optimal matching impedance of the power amplifier tube's package surface. This impedance determination method achieves pull-type processing based on the optimal impedance of the power amplifier tube's package surface, obtaining the optimal fundamental impedance at the input end, the optimal second harmonic impedance at the output end, the optimal third harmonic impedance at the output end, and the optimal fundamental impedance at the output end. This allows the broadband power amplifier to maintain broadband operation while simultaneously achieving high efficiency, meeting the wide bandwidth and high efficiency requirements of modern wireless communication technologies.

The application provides a power amplifier architecture for broadband microwave signal mixing and a working method thereof. The power amplifier architecture comprises a continuous wave microwave signal source S1, a synchronization signal source S2, a pulse signal source S3, a broadband phase shifter or a delay device D1, a broadband power amplifier A1, a broadband power amplifier A2, a broadband power amplifier A3, a bridge H1, a bridge H2, an isolation resistor R1, a directional coupler C1, a directional coupler C2, a directional coupler C3 and a directional coupler C4. The power amplifier architecture realized by the application is used for seamless mixing of broadband high-power microwave signals, and the mixing ratio, frequency and signal pattern are not limited, and the cost of a micro-power test system can be greatly reduced.

The present application relates to the technical fields of wideband power amplifier, and especially relates to a wideband power amplifier input control circuit, which comprises: a first operational amplifier circuit, a same-phase input end of which is connected with a related voltage signal of a wideband power amplifier output signal, an opposite-phase input end of which is connected with a voltage signal corresponding to a preset voltage threshold for amplitude stabilization, and an output end of which outputs a voltage signal for amplitude stabilization; a waveband selection circuit, an input end of which is connected with a preset waveband selection control signal, selects and outputs a segmented preset voltage signal corresponding to a frequency waveband of the output signal; a second operational amplifier circuit, a same-phase input end of which is connected with the segmented preset voltage signal, an opposite-phase input end of which is connected with the voltage signal for amplitude stabilization, and an output end of which outputs an attenuation value control voltage signal; and an electrically tunable attenuator, an input end of which is connected with the attenuation value control voltage signal, and an output end of which outputs a working radio frequency signal to the wideband power amplifier. The present application can solve the technical problem of unstable power output amplitude of the wideband power amplifier.

A power amplifier package is proposed. The power amplifier package may include a heat sink including a protrusion heat sink structure, and a transistor die disposed on a surface of the protrusion heat sink structure. The power amplifier package may also include an insulation board formed on a surface of the heat sink and including an aperture upward exposing the protrusion heat sink structure. The power amplifier package may further include an input and output impedance matching network formed on a surface of the insulation board and electrically connected to the transistor die by a bonding wire.