The invention discloses a bidirectional high-voltage ESD protection device of a full-symmetric LDMOS triggered SCR structure, and belongs to the field of electrostatic discharge protection and surge resistance of integrated circuits. The protection device is mainly composed of a P substrate, a deep N well, a first P well, an N well, a second P well, a first P + injection region, a first N + injection region, a first polysilicon gate, a first thin gate oxide layer, a first field oxide isolation region, a second P + injection region, a second field oxide isolation region, a second polysilicon gate, a second thin gate oxide layer, a second N + injection region and a third P + injection region. The two NLDMOSs are embedded to form an auxiliary trigger SCR current path in which the on-state NLDMOS and the off-state NLDMOS are connected in series. The voltage withstanding capability of the device is improved, so that the device meets the ESD protection requirement of a high-voltage power supply domain, the ESD robustness of the device is enhanced, the discharge efficiency of the device in unit area is improved, the carrier concentration of a base region in a parasitic SCR structure is reduced, and the maintaining voltage of the device is improved.