The invention discloses an electrooptical modulator based on a phase-change material. The electrooptical modulator comprises an SOI substrate; the electrooptical modulator is characterized in that aninput waveguide, a mixing waveguide and an output waveguide connected in sequence are arranged on the SOI substrate in the horizontal direction, the mixing waveguide is formed by laminating a siliconwaveguide layer, a phase-change material GST layer and a copper electrode layer from bottom to top in sequence, the SOI substrate comprises a layer of silicon substrate body with the thickness of 250nanometers and a silicon dioxide layer with the thickness of 2 micrometers, the thicknesses of the input waveguide and the output waveguide are both 250 nanometers, the widths of the input waveguide and the output waveguide are both 400 nanometers, the thickness of the mixing waveguide is 290 nanometers, the width of the mixing waveguide is 400 nanometers, and silicon thin film with the thicknessof 10 nanometers is formed at one side of the silicon waveguide layer through selective erosion. The electrooptical modulator has the advantages that the size is small, on-substrate integration is facilitated, the energy consumption is low, the working bandwidth is large, the modulating depth is large, and the inserting loss is low.