40 results about "External bias" patented technology

A near-infrared radiation detector comprises: a substrate comprising a semiconductor; a substrate electrode formed in contact with the substrate; an active layer formed over the substrate, the active layer comprising a ferroelectric material; and an active layer electrode formed in contact with the active layer and substantially transparent to near-infrared radiation. The detector is operable without applied external bias so that, when near-infrared radiation is incident on the detector, charge carriers are generated by a photovoltaic effect in the substrate / active layer heterojunction and a temperature gradient is generated in the active layer, providing a pyro-phototronic current signal indicative of the near-infrared radiation incident on the detector. Also disclosed is a corresponding method of detecting near-infrared radiation.

The invention discloses a nonlinear quasi bound state terahertz non-magnetic regulation non-reciprocal transmitter and a control method, and belongs to the field of terahertz devices. The nonlinear quasi bound state terahertz non-magnetic regulation non-reciprocal transmitter is formed by periodically arranging and splicing a plurality of unit structures, and each unit structure comprises a silicon carbide substrate and a cylindrical groove gallium arsenide cylinder with the same outer diameter and different inner diameters. The non-linearity of the gallium arsenide material is combined with the asymmetry of the gallium arsenide cylindrical unit structures of the cylindrical grooves with the same outer diameter and different inner diameters, and the non-reciprocal transmission intensity of the terahertz waves is adjusted by changing structural parameters, so that the non-reciprocal transmission regulation and control of the terahertz waves are realized. The nonlinear quasi-bound-state terahertz non-magnetic regulation non-reciprocal transmission device designed by the invention is simple in structure, terahertz wave transmission can be regulated only by changing the incident power of terahertz waves without additionally arranging bias mechanisms such as an external magnetic field, electricity, light, a heat source and the like, and the nonlinear quasi-bound-state terahertz non-magnetic regulation non-reciprocal transmission device is suitable for a future terahertz integrated system.

The invention discloses a terahertz non-reciprocal transmission regulator with a double-quasi bound state effect and a method thereof, and belongs to the field of terahertz technologies and devices. The terahertz non-reciprocal transmission device with the double quasi bound state effect is formed by periodically arranging and splicing a plurality of unit structures, and each unit structure is composed of amorphous chalcogenide glass arsenic selenide with unequal rectangular grooves. According to the invention, the nonlinearity of the arsenic selenide material is combined with the asymmetry of the amorphous chalcogenide glass arsenic selenide unit with unequal grooves to generate a double quasi bound state effect, and the first quasi bound state effect and the second quasi bound state effect are utilized to realize the terahertz wave nonreciprocal transmission regulation and control of double frequency points at the same time. The terahertz non-reciprocal transmission device with the double quasi bound state effect designed by the invention is simple in structure, terahertz wave transmission can be regulated and controlled only by changing the incident power of terahertz waves without adding any external bias, and the research of an integratable non-reciprocal device is facilitated.

The invention discloses an ionic elastomer photoelectric sensor based on triplet-triplet annihilation up-conversion and a preparation method of the ionic elastomer photoelectric sensor, and belongs to the technical field of functional materials and photoelectric sensing. The photosensitizer and the luminescence agent form a triplet state-triplet state annihilation up-conversion system. The preparation method comprises the following steps: respectively forming the ionic conductive phase and the optical active phase, mixing the ionic conductive phase and the optical active phase to form a homogeneous system, and curing and molding through photo-initiation polymerization. Under the optical excitation condition of a specific wave band, the ion elastomer can generate measurable electric signal output, so that conversion from an optical signal to an electric signal is realized. The flexible photoelectric sensor can be prepared by curing the material on the surface of an electrode, can work under the condition of no external bias voltage or low bias voltage, has the characteristics of good wavelength selectivity, excellent flexibility and stretchability and the like, and has an application prospect in the fields of wearable sensing and flexible electronics.

The invention relates to a preparation method of a YIG-M type barium ferrite mixed material for a microstrip line circulator. The preparation method comprises the following steps: firstly, preparing YIG precursor powder and barium ferrite powder; pressing the YIG precursor powder into a green body, and sintering to obtain phase-formed YIG ferrite; and crushing the YIG ferrite, mixing the crushed YIG ferrite with the barium ferrite precursor powder according to a mass ratio of 1: 2-2: 1, pressing the mixture into a green body, and carrying out sintering phase formation to obtain the YIG-M type barium ferrite mixed material. The external bias magnetic field of the prepared mixed material is far smaller than that of a traditional YIG material, a good circulation effect can be achieved only through a smaller permanent magnet, and a circulator can be further miniaturized and integrated.

The application relates to the technical field of chips, in particular to an oscillator circuit and an isolated driving chip applying the same, which comprises a first control module, a bias voltage module and a delay module, the first control module is connected to the bias voltage module, the bias voltage module is connected to the delay module, the delay module is connected to a second control module, and the second control module is used for connecting an external under-voltage protection module; when the first control module receives external bias current and the bias voltage module connects an external power supply end VCC, the bias voltage module outputs voltage for the delay module, and the second control module feeds back to the delay module after receiving the voltage output by the under-voltage protection module to generate oscillation. The application has the effect of improving the oscillation frequency.

Provided is a photoelectric conversion element comprising a first electrode film (A), a photoelectric conversion layer (B), an auxiliary layer (C) that includes a compound α, and a second electrode film (D), wherein a change rate rd3 represented by formula (i) is 0.020-50.0. Formula (i): rd3=d3a / d3b. In the formula, d3a is a dark current (external bias 3V) after heat treatment under the following conditions, and d3b is a dark current (external bias 3V) without heat treatment. The conditions are that heating is performed for 1-3000 minutes at not lower than 450°C below a reference temperature and not higher than 10°C below the reference temperature, the reference temperature being a 5% mass reduction temperature of the compound α as measured at a pressure of 0.10 MPa, with nitrogen at 200 mL / min, a temperature of 20-550°C, and a temperature increase rate of 10°C / min.

The application discloses a kind of quasi-terahertz wave full absorption metasurface absorber and preparation method thereof, the structure of absorber includes: the design of silica layer, graphene multilayer structure and metal base;The structural design of top silica four pyramid;The structural design of multilayer graphene electric control simultaneously.The application uses multilayer graphene to enhance terahertz wave absorption, through the control of external bias voltage, can control the absorption intensity of low-frequency absorption band, realize certain degree of tunability.In terahertz wave band, the metasurface absorber proposed in the application can reach 96.33% average absorption in 0.5-10.0THz band.The application can effectively solve the problem that current absorber can only absorb part of terahertz wave band, open a new road for high performance of terahertz wave absorption field device.

A modulated laser is described, comprising a laser (30) optically coupled to a modulator (50), the modulator (50) having an intrinsic region (52) comprising: a multi-quantum-well material (41); a field control layer (42) having a doping density to enhance the electric field in the multi-quantum-well material; and a collection layer (43) having a band gap higher than that of the multi-quantum-well material (41). Combining the field control layer and the collection layer in the intrinsic region of the modulator of the modulated laser eliminates the need for a trade-off between high speed and low external bias in the modulated laser.

The application relates to a second-order adjustable transistor with a time-domain programmable characteristic and a preparation method thereof. The transistor comprises an insulator substrate, a gate bottom electrode, a ferroelectric blocking layer, a floating gate layer, a tunneling layer, a channel layer and a source and a drain, wherein the blocking layer is a ferroelectric material layer with an electrically programmable polarization state. Through the coupling of the ferroelectric polarization effect and the floating gate charge capture mechanism, the Schottky barrier height at the floating gate interface is regulated, thereby changing the release dynamics of photo-generated carriers, realizing the adjustable relaxation time of photo-generated carriers in the millisecond to second range, and realizing the time-domain programmable regulation of multiple different time factors without the need of a continuous external bias voltage. The device breaks through the limitation of a single time factor of a neuromorphic device and is suitable for in-situ computing scenes such as multi-speed motion perception.

The application discloses an X-ray detection composite material structure and a preparation method thereof. The composite material structure is composed of a conductive substrate (ITO glass), a nickel oxide (NiOx) nanostructure, a lead bromide formamidine (MAPbBr3) single crystal and an upper electrode. The preparation method comprises batching, a liquid phase reaction method and a solution method single crystal growth. The composite material structure prepared by the application can realize self-driven X-ray detection, that is, converts incident X-rays into current signals without an external bias voltage. The application has the advantages of low detection limit, wide detection energy range, high resolution, rapid response, good linearity and low manufacturing cost, and can be applied to X-ray detection, X-ray imaging, light sensors and many other fields.

This invention discloses a colloidal quantum dot dual-mode detector and its fabrication method. The colloidal quantum dot dual-mode detector comprises, from bottom to top, a substrate, a bottom electrode, a photodiode layer, an electric field modulation layer, a gain device layer, and a top electrode, stacked sequentially. Through an innovative vertically stacked bandgap design, this invention integrates a colloidal quantum dot photodiode and a multi-junction gain structure within a single device for the first time. The device intelligently modulates the direction of the internal electric field using an external bias voltage, achieving precise and rapid switching between high-gain weak-light detection and high-linearity strong-light detection modes. It also fundamentally suppresses dark current, solving the problems of excessive noise and poor stability in traditional gain devices. Furthermore, the device maintains high response speed and excellent stability while possessing a compact structure and high compatibility with existing planar processes, demonstrating excellent process compatibility and large-scale fabrication potential, providing a stable and reliable technical foundation for the development of high-resolution infrared imaging devices.

The present invention relates to a read sense amplifier circuit and system that enables read operations over a wide power range by using a low reference resistor and securing gain through a two-stage operational amplifier circuit, and can also detect low fuse resistance to secure a sensing resistance margin and improve yield, and a memory cell read method using the same. The above read sense amplifier circuit comprises a current mirror circuit stage that receives a reference current from an external bias circuit and mirrors the reference current through a plurality of paths, a reference resistor stage including a reference resistor and an NMOS transistor that activates the reference resistor, a precharge circuit stage that receives a precharge signal and precharges a reference bit line connected to the reference resistor based on the precharge signal, an amplifier circuit stage that senses cell data for a cell corresponding to the selected fuse using the voltage difference between the resistance of the selected fuse corresponding to the selected cell and the reference resistor, and a buffer circuit stage that outputs the sensed data, wherein the amplifier circuit stage includes a plurality of PMOS transistors, and at least one input stage of the plurality of PMOS transistors of the amplifier circuit stage may be electrically connected to a connection resistor.

This invention discloses a portable high-flux-rate synchrotron radiation X-ray air kerma measurement device. This invention relates to the field of X-ray air kerma measurement technology, and proposes the following solution: It includes a silicon photodiode, a front shielding plate, a middle frame, and a rear shielding plate. A detector window is provided at the center of the front shielding plate, and a beryllium plate is mounted on the back of the detector window. The silicon photodiode is fixedly mounted on a base, which is also fixedly mounted on the front shielding plate. Mounting holes are provided on the rear shielding plate. This invention, by being installed within the front, middle, and rear shielding plates, possesses the characteristics of miniaturization and portability, making it suitable for small laboratories and portable use. Unlike free air ionization chambers, silicon photodiodes have high quantum efficiency, low dark current, strong radiation resistance, insensitivity to external magnetic fields, and do not require external bias voltage for measurement. Furthermore, their small size makes them easy to move.

The application belongs to the technical field of wide band gap semiconductor photoelectric detection, and particularly relates to a NdZnO-based high-suppression-ratio self-powered solar-blind ultraviolet photodetector and a preparation method thereof, realizes accurate band regulation of Nd2O3, red shifts the absorption cutoff edge from 215 nm to 280 nm, and perfectly matches the solar-blind ultraviolet band. Meanwhile, a p-Gr / i-NdZnO / n-Si double heterojunction structure forms two directionally coordinated built-in electric fields, and the photo-generated carriers can be separated and collected quickly without external bias, effectively solving the problem of excessively high resistivity of Nd2O3, and realizing self-powered work under 0V bias. The preparation method adopts room-temperature magnetron co-sputtering and graphene wet transfer process, and the whole preparation process is completed at room temperature, without complex high-temperature equipment, and the process parameters are controllable and good in repeatability, and the method is suitable for large-scale industrial production.

The application discloses a kind of photo-assisted stripping GaN film and its device method and system, belong to optoelectronic device preparation technical field, including the following steps: provide from bottom to top in turn for substrate, GaN sacrificial layer and target layer epitaxial structure;Exposure at least partial area of GaN sacrificial layer is carried out to epitaxial structure to process, and make GaN sacrificial layer and anode electric connection;Epitaxial structure is placed in electrolyte, with sacrificial layer as anode, while applying external bias between anode and cathode, interface of electrolyte and epitaxial structure is irradiated with light simultaneously, and the redox reaction kinetics process of sacrificial layer is accelerated using photo-generated carrier effect, and then target layer is separated after rapid selective dissolution of sacrificial layer is realized.In the basis of traditional electrochemical stripping, specific wavelength range of light irradiation is introduced, etching process is significantly accelerated by photo-generated carrier effect, etching selectivity is improved, stripping time is shortened, and interface quality of film after transfer is improved.

The application discloses a kind of bias switchable bimodulus photodetectors based on two-dimensional van der Waals p-n heterostructure and preparation method thereof, belong to the technical field of photodetector, by the ingenious combination of asymmetric work function electrode and van der Waals p-n junction, the vertical heterostructure of "Gr / 2H-MoTe2 / alpha-In2Se3 / Au" is designed, only simple change external bias polarity, it can realize instant reversible switching between photovoltaic mode and photoconductive mode, specifically, extremely high internal gain and ultra-low noise performance can be obtained in photoconductive mode, the dark current in photovoltaic mode reaches the order of magnitude of fly, while having excellent rectification characteristic and open-circuit voltage, realize the true sense of self-powered high-speed detection.The device of the application does not need ion doping, complex epitaxial growth or multi-gate regulation, easy to scale preparation and array integration.

The invention discloses a two-dimensional wave beam regulation and control broadband filtering antenna array driven by a No-en matrix and an adjustable phase shifter. The two-dimensional wave beam regulation and control broadband filtering antenna array comprises a No-en topology broadband wave beam forming network, a phase difference adjustable broadband power division phase shifting network, a broadband filtering antenna array and an input port. The Neen topological beam forming network is composed of a multi-stage co-directional output broadband directional coupler, an open-short circuit stub loading transmission line and a U-shaped transmission line, and is used for realizing multi-beam forming in the horizontal direction; the phase difference adjustable broadband power division phase shift network is composed of a three-wire coupling broadband power divider and a difference adjustable phase shifter, 360-degree continuous adjustable phase difference output within the broadband range is achieved by adjusting external bias voltage, and beam adjustment in the vertical direction is achieved. The broadband filtering antenna array adopts an end-on-fire structure, combines a folded microstrip line and a coplanar waveguide feed form, and has broadband radiation and filtering characteristics.

The invention relates to the technical field of scanning tunneling microscopes, and discloses a scanning probe measuring device and a control method for pinpoint-to-pinpoint imaging, two pinpoints are oppositely arranged, and the pinpoints are accurately controlled and movably positioned based on a basic working mode of a scanning probe microscope. A needle tip-tunnel junction-needle tip working structure is established, after bias voltage is applied externally, electron tunneling between needle tips only relates to a small number of atoms or single atoms at the tail ends of the needle tips, the tunneling effect that the small number of atoms contribute to electrons is achieved, and therefore small number or single atom imaging is achieved. The device can be rapidly transplanted to application scenes of low temperature, strong magnetic field, optical measurement and the like, the double-needle-point structure is regulated and controlled through piezoelectric displacement or an electric field, tunnel junction width and barrier height can be optimized in real time, and research on dynamic construction and dynamic electrical characteristics of nanoscale tunnel junctions is greatly facilitated.

The application discloses a van der Waals asymmetric thermal resistance structure infrared thermoelectric detector and a preparation method thereof. The detector adopts a sandwich stacking structure and sequentially comprises, from bottom to top, a silicon nitride film, a middle electrode layer, a first electrode and a second electrode arranged on the silicon nitride film, and a thermoelectric conversion material layer, two ends of the thermoelectric conversion material layer being respectively in ohmic contact with the first electrode and the second electrode to form a suspended thermal bridge structure with the silicon nitride film as a support. The thermoelectric conversion material layer is selected from a low-thermal-conductivity high-Seebeck-coefficient van der Waals material, the contact area of the thermoelectric conversion material layer with the first electrode is greater than the contact area of the thermoelectric conversion material layer with the second electrode, and an asymmetric thermal resistance interface is formed between the first electrode and the second electrode, so that infrared thermoelectric detection is realized without an external bias. The application provides a novel infrared thermoelectric detector with high performance, self-power supply and compact structure.

The invention discloses an external bias device for a low-temperature probe and further discloses a de-embedding calibration measurement method of the external bias device for the low-temperature probe, the external bias device comprises a radio frequency test instrument, an external bias unit, a bias feed network and a low-temperature magnetic resonance probe, the external bias unit is used for providing direct-current bias voltage, and the bias feed network is used for providing direct-current bias voltage; the radio frequency test instrument is used for generating a test signal in the low-temperature magnetic resonance probe, and a direct-current bias signal output by the external bias unit forces the PIN diode to be converted from a high-resistance isolation state to a low-resistance conduction state; then the radio frequency testing instrument is started, milliwatt-level signals generated by the radio frequency testing instrument can easily reach the radio frequency coil through the passive T / R switch, so that the radio frequency coil is tested, the passive T / R switch is switched on under the conditions that the packaging structure of the low-temperature magnetic resonance probe is not damaged and an internal circuit is not changed, and the low-temperature magnetic resonance probe is tested. Therefore, a radio frequency test channel is established.

This invention relates to a photoelectrocatalytic reaction device without external bias and its applications, belonging to the field of energy materials and catalysis technology. The invention utilizes nanosheet nickel hydroxide, prepared by electrodeposition on hydrophilic carbon paper, as a catalyst for the oxidation of 5-hydroxymethylfurfural (HMF). A binuclear copper molecule is synthesized as a carbon dioxide (CO2) reduction catalyst via a reflux reaction of 1,2-bis(diphenylphosphine)benzene and copper bromide. The HMF oxidation catalyst is connected to the anode of a triple-junction gallium arsenide battery, encapsulated, and placed in the anode chamber. A hydrophobic carbon paper loaded with the binuclear copper molecule catalyst is connected to the cathode. Under no external bias, the anode efficiently oxidizes HMF to FDCA (2,5-furandicarboxylic acid) through the synergistic effect of nickel hydroxide and tetramethylpiperidine oxide (TEMPO), while the cathode simultaneously reduces CO2. This system exhibits high selectivity, high conversion rate, and excellent catalytic efficiency. The device is reusable, and the catalyst preparation is simple and the raw materials are inexpensive and readily available.

This invention provides a non-contact interactive system based on a photoelectric sensor array, comprising: a photoelectric sensor array, the photoelectric sensor array including: a transparent substrate; a conductive layer formed on the transparent substrate; a patterned confinement layer formed on the conductive layer for forming a patterned array of photoelectric active materials; a patterned array of photoelectric active materials formed on the patterned confinement layer, wherein each patterned unit in the array forms a miniature photoelectric sensor unit under the drive of an external bias voltage; a surface light source located on the back side of the substrate of the photoelectric sensor array; and a reflector movably located on the front side of the substrate of the photoelectric sensor array. This interactive system utilizes the high responsivity and fast response speed characteristics of the photoelectric sensor array to enable the interactive interface to quickly track signals from moving objects, and achieves photocurrent growth through light reflection from the reflector onto the surface light source, thereby realizing a responsive, contactless, three-dimensional human-computer interaction.

The purpose of the present disclosure is to widen the bandwidth of an optical receiver through a simple configuration.　An optical receiver 100 according to the present disclosure comprises: a subcarrier 2; a PD 3 which is provided to the subcarrier 2 and which receives light and is driven by voltage supply from an external bias power supply E; and a dielectric layer 5 which is formed in the subcarrier 2.

The invention discloses an oscillator circuit and a microcontroller, and the oscillator circuit comprises a pre-voltage-stabilizing circuit which converts a first power supply voltage into a second power supply voltage, and the second power supply voltage is smaller than the first power supply voltage; the bias circuit is used for providing bias current based on the second power supply voltage; the clock signal generation circuit is used for outputting a square wave signal based on the bias current; and the clock signal output circuit is used for outputting a first clock signal working in a power domain corresponding to the first power supply voltage and a second clock signal working in a power domain corresponding to the second power supply voltage based on the square wave signal. Through the pre-voltage-stabilizing circuit, the first power supply voltage is converted into the second power supply voltage and then is output to the subsequent circuit, so that the problem that the low-speed oscillator cannot output the clock signal when the kernel power supply is closed or the power supply voltage drops to the level that the logic circuit cannot work normally is avoided; and the bias circuit can generate a bias current based on the second power supply voltage, and does not depend on an external bias current source.

The invention discloses a bionic visual adaptation phototransistor and a preparation method thereof. The phototransistor comprises a substrate; the gate dielectric layer is positioned on the substrate; the single-layer metal oxide nanofiber network functional layer is positioned on the gate dielectric layer; the source electrode and the drain electrode are located on the single-layer metal oxide nanofiber network functional layer, and a semiconductor channel layer is formed between the source electrode and the drain electrode; wherein the single-layer metal oxide nanofiber network functional layer has an intrinsic defect state, so that the output current of the phototransistor is monotonically enhanced along with time to simulate a dark adaptation behavior when the power density of incident light is lower than a first threshold value under the condition of zero gate voltage; when the incident light power density is greater than or equal to a first threshold value, the output current rises to a peak value and then decays along with time to simulate a bright adaptation behavior. The invention overcomes the defects that the prior art depends on a complex heterojunction and needs external bias voltage driving.

The invention provides a miniature gauge pressure sensor based on a two-dimensional Bi2O2Se suspended thin film, and belongs to the technical field of micro electro mechanical systems (MEMS). The miniature gauge pressure sensor comprises a substrate, array holes, a suspended thin film, an upper electrode and a lower electrode; the substrate adopts a silicon wafer, and the upper surface of the silicon wafer is covered with an insulating layer; the array holes are micron-sized regularly arranged holes and are formed on the insulating layer and the silicon substrate through photoetching and etching processes; the suspended thin film is a two-dimensional Bi2O2Se nanosheet, covers the array holes through a wet transfer process, and forms a closed cavity together with the array holes; the upper electrodes are arranged on the edges of the two sides of the suspended thin film, the lower electrodes are arranged on the insulating layer below the suspended thin film, and the upper electrodes and the lower electrodes are made of high-conductivity metal and used for collecting charge signals. The two-dimensional material Bi2O2Se with supernormal effective piezoelectric response is adopted, an independent suspended film structure is utilized, external bias voltage or driving current is not needed, self-powered sensing is achieved, and efficient and direct conversion from pressure change to electric signals is achieved.

A magnetic encoding system based on self-biased anisotropic magnetoresistance sensor belongs to the technical field of angle measurement. The magnetic encoding system comprises a magnetic field generating device for generating a periodic spatial magnetic field, a sensor probe for detecting the magnetic field and outputting two-way orthogonal voltage signals, and a signal processing unit for receiving and processing the two-way orthogonal voltage signals to solve the angle information; wherein the probe comprises two self-biased anisotropic magnetoresistance linear magnetic field sensors arranged orthogonally in space. The self-biased AMR linear sensor is used to construct the orthogonal measurement system, and the external bias magnet necessary in the traditional scheme is omitted, so that the structure is significantly simplified, and the cost and volume are reduced. At the same time, by introducing the system level calibration algorithm based on ellipse fitting, the inherent amplitude error, zero offset and orthogonality deviation of the discrete sensor system are effectively eliminated, and high-precision angle measurement is realized.

This application discloses an adjustable planar prism. It includes, from top to bottom, an electrically conductive structure layer, a dielectric substrate, and a metal backplate. The electrically conductive structure layer includes an insulating layer, on which multiple spaced metasurface basic units are disposed. Each metasurface basic unit includes two graphene strips symmetrically arranged on the upper and lower surfaces of the insulating layer. This adjustable planar prism employs a structure design of a double-layer graphene grating, a dielectric substrate, and a metal backplate, enabling perfect dispersion of the anomalous reflection angle of broadband terahertz waves. Due to the electrically tunable characteristics of graphene, the Fermi level of the graphene in the unit can be changed by applying an external bias voltage, allowing for convenient and rapid dynamic adjustment of the dispersion angle range of the reflected beam. Furthermore, the double-layer electrically biased structure composed of two symmetrically arranged graphene strips facilitates the application of bias voltage and is easy to fabricate.