60 results about "External bias" patented technology

The invention provides a preparation method of a PdSe2 / Bi2O2Se Van der Waals heterojunction self-driven photoelectric detector, and relates to construction of a two-dimensional material heterostructure and application of the two-dimensional material heterostructure to a photoelectric device. The method comprises the following steps; the preparation method comprises the following steps: preparing nanosheets through a chemical vapor deposition (CVD) process; respectively preparing a PdSe2 nanosheet and a Bi2O2Se nanosheet by adopting the CVD process; and preparing a heterostructure: transferring the PdSe2 nanosheet to the surface of the Bi2O2Se nanosheet in a dry transfer mode to form a Van der Waals heterojunction structure with a clean interface and tight interlayer coupling. The transfer technology keeps the lattice and morphology of the two-dimensional material complete, and reduces organic residues and solvent pollution influences. The heterojunction structure is combined with the narrow band gap of PdSe2 and the broad spectrum response characteristic of Bi2O2Se, and efficient photoelectric conversion from visible light to near-infrared light is achieved. And an electric field is built in the p-n type heterojunction, so that the device is self-driven without external bias voltage, and has the performance of low power consumption and the like. And the method is low in process thermal budget, high in compatibility and suitable for various substrates, and a technical path is provided for construction of the flexible photoelectric detector.

The invention discloses a non-magnetic passive space nonreciprocal antenna housing based on an artificial electromagnetic metamaterial, and relates to the technical field of stealth materials, the non-magnetic passive space nonreciprocal antenna housing comprises antenna housing units which are periodically spliced in a plane, and each antenna housing unit comprises two dielectric substrates which are vertically crossed with each other; artificial microstructure units are arranged on the upper surface and the lower surface of the dielectric substrate; wherein the artificial microstructure unit arranged on the upper surface of the dielectric substrate comprises a double-opening SRR ring, the artificial microstructure unit arranged on the lower surface of the dielectric substrate comprises an asymmetric square opening ring, and the centers of the double-opening SRR ring and the asymmetric square opening ring are asymmetric. The technical problems that in the prior art, a non-reciprocal super-electromagnetic surface needs external magnetic bias or an external power source, preparation is complex, and integration is difficult are solved.

A near-infrared radiation detector comprises: a substrate comprising a semiconductor; a substrate electrode formed in contact with the substrate; an active layer formed over the substrate, the active layer comprising a ferroelectric material; and an active layer electrode formed in contact with the active layer and substantially transparent to near-infrared radiation. The detector is operable without applied external bias so that, when near-infrared radiation is incident on the detector, charge carriers are generated by a photovoltaic effect in the substrate / active layer heterojunction and a temperature gradient is generated in the active layer, providing a pyro-phototronic current signal indicative of the near-infrared radiation incident on the detector. Also disclosed is a corresponding method of detecting near-infrared radiation.

The invention discloses a nonlinear quasi bound state terahertz non-magnetic regulation non-reciprocal transmitter and a control method, and belongs to the field of terahertz devices. The nonlinear quasi bound state terahertz non-magnetic regulation non-reciprocal transmitter is formed by periodically arranging and splicing a plurality of unit structures, and each unit structure comprises a silicon carbide substrate and a cylindrical groove gallium arsenide cylinder with the same outer diameter and different inner diameters. The non-linearity of the gallium arsenide material is combined with the asymmetry of the gallium arsenide cylindrical unit structures of the cylindrical grooves with the same outer diameter and different inner diameters, and the non-reciprocal transmission intensity of the terahertz waves is adjusted by changing structural parameters, so that the non-reciprocal transmission regulation and control of the terahertz waves are realized. The nonlinear quasi-bound-state terahertz non-magnetic regulation non-reciprocal transmission device designed by the invention is simple in structure, terahertz wave transmission can be regulated only by changing the incident power of terahertz waves without additionally arranging bias mechanisms such as an external magnetic field, electricity, light, a heat source and the like, and the nonlinear quasi-bound-state terahertz non-magnetic regulation non-reciprocal transmission device is suitable for a future terahertz integrated system.

The invention discloses a terahertz non-reciprocal transmission regulator with a double-quasi bound state effect and a method thereof, and belongs to the field of terahertz technologies and devices. The terahertz non-reciprocal transmission device with the double quasi bound state effect is formed by periodically arranging and splicing a plurality of unit structures, and each unit structure is composed of amorphous chalcogenide glass arsenic selenide with unequal rectangular grooves. According to the invention, the nonlinearity of the arsenic selenide material is combined with the asymmetry of the amorphous chalcogenide glass arsenic selenide unit with unequal grooves to generate a double quasi bound state effect, and the first quasi bound state effect and the second quasi bound state effect are utilized to realize the terahertz wave nonreciprocal transmission regulation and control of double frequency points at the same time. The terahertz non-reciprocal transmission device with the double quasi bound state effect designed by the invention is simple in structure, terahertz wave transmission can be regulated and controlled only by changing the incident power of terahertz waves without adding any external bias, and the research of an integratable non-reciprocal device is facilitated.

The invention discloses an ionic elastomer photoelectric sensor based on triplet-triplet annihilation up-conversion and a preparation method of the ionic elastomer photoelectric sensor, and belongs to the technical field of functional materials and photoelectric sensing. The photosensitizer and the luminescence agent form a triplet state-triplet state annihilation up-conversion system. The preparation method comprises the following steps: respectively forming the ionic conductive phase and the optical active phase, mixing the ionic conductive phase and the optical active phase to form a homogeneous system, and curing and molding through photo-initiation polymerization. Under the optical excitation condition of a specific wave band, the ion elastomer can generate measurable electric signal output, so that conversion from an optical signal to an electric signal is realized. The flexible photoelectric sensor can be prepared by curing the material on the surface of an electrode, can work under the condition of no external bias voltage or low bias voltage, has the characteristics of good wavelength selectivity, excellent flexibility and stretchability and the like, and has an application prospect in the fields of wearable sensing and flexible electronics.

The invention relates to a preparation method of a YIG-M type barium ferrite mixed material for a microstrip line circulator. The preparation method comprises the following steps: firstly, preparing YIG precursor powder and barium ferrite powder; pressing the YIG precursor powder into a green body, and sintering to obtain phase-formed YIG ferrite; and crushing the YIG ferrite, mixing the crushed YIG ferrite with the barium ferrite precursor powder according to a mass ratio of 1: 2-2: 1, pressing the mixture into a green body, and carrying out sintering phase formation to obtain the YIG-M type barium ferrite mixed material. The external bias magnetic field of the prepared mixed material is far smaller than that of a traditional YIG material, a good circulation effect can be achieved only through a smaller permanent magnet, and a circulator can be further miniaturized and integrated.

The application relates to the technical field of chips, in particular to an oscillator circuit and an isolated driving chip applying the same, which comprises a first control module, a bias voltage module and a delay module, the first control module is connected to the bias voltage module, the bias voltage module is connected to the delay module, the delay module is connected to a second control module, and the second control module is used for connecting an external under-voltage protection module; when the first control module receives external bias current and the bias voltage module connects an external power supply end VCC, the bias voltage module outputs voltage for the delay module, and the second control module feeds back to the delay module after receiving the voltage output by the under-voltage protection module to generate oscillation. The application has the effect of improving the oscillation frequency.

Provided is a photoelectric conversion element comprising a first electrode film (A), a photoelectric conversion layer (B), an auxiliary layer (C) that includes a compound α, and a second electrode film (D), wherein a change rate rd3 represented by formula (i) is 0.020-50.0. Formula (i): rd3=d3a / d3b. In the formula, d3a is a dark current (external bias 3V) after heat treatment under the following conditions, and d3b is a dark current (external bias 3V) without heat treatment. The conditions are that heating is performed for 1-3000 minutes at not lower than 450°C below a reference temperature and not higher than 10°C below the reference temperature, the reference temperature being a 5% mass reduction temperature of the compound α as measured at a pressure of 0.10 MPa, with nitrogen at 200 mL / min, a temperature of 20-550°C, and a temperature increase rate of 10°C / min.

The invention relates to the technical field of semiconductor materials and devices, and discloses an efficient circularly polarized photoelectric detector based on a topological quantum material, the efficient circularly polarized photoelectric detector comprises a substrate and an epitaxial structure grown on the substrate, the substrate is a Bi-modified Si (111) reconstructed surface, and the epitaxial structure is a Bi2Se3 / (Bi1-xInx) 2Se3 superlattice. The invention further provides a preparation method of the efficient circularly polarized photoelectric detector based on the topological quantum material, by designing the superlattice structure of the absorption layer, the conductance effect of circularly polarized light is effectively enhanced, and efficient circularly polarized light detection can be achieved without external bias voltage.

The invention provides a display unit and a display unit control method and device. The display unit comprises an LED array and a mirror image circuit, wherein the mirror image circuit comprises an MOS device; the drain electrode of the MOS device is used for being electrically connected with an external positive voltage generation circuit, the source electrode of the MOS device is electrically connected with the positive electrode of an LED in the LED array, the grid electrode of the MOS device is electrically connected with an external bias voltage generation circuit, and the negative electrode of the LED is used for being electrically connected with an external negative voltage generation circuit. Through the implementation of the scheme of the invention, the MOS device is connected with the LED in series and then is connected with the positive voltage generation circuit and the negative voltage generation circuit, and the output voltage of the negative voltage generation circuit is adjustable, so that the drain-source voltage of the MOS device can be adjusted through the output voltage, the power consumption of the LED is adjusted, the dissipation power of the LED is reduced, and the service life of the LED is prolonged. And the heating condition of the display unit is effectively improved.

The application discloses a kind of quasi-terahertz wave full absorption metasurface absorber and preparation method thereof, the structure of absorber includes: the design of silica layer, graphene multilayer structure and metal base;The structural design of top silica four pyramid;The structural design of multilayer graphene electric control simultaneously.The application uses multilayer graphene to enhance terahertz wave absorption, through the control of external bias voltage, can control the absorption intensity of low-frequency absorption band, realize certain degree of tunability.In terahertz wave band, the metasurface absorber proposed in the application can reach 96.33% average absorption in 0.5-10.0THz band.The application can effectively solve the problem that current absorber can only absorb part of terahertz wave band, open a new road for high performance of terahertz wave absorption field device.

The invention discloses an adjustable ultra-wideband terahertz metamaterial wave absorber, and belongs to the technical field of terahertz wave absorbers. The wave absorber is composed of a plurality of same metamaterial structure units which are periodically arranged, and each metamaterial structure unit is made of three layers of composite materials, wherein the first layer is a graphene pattern layer, the second layer is a polyimide dielectric layer, and the third layer is a copper reflecting layer. Wherein the graphene pattern layer adopts a combined design of four groups of square and L-shaped structures, and the four groups of structures form a biaxial symmetry layout through geometric coupling. The structure has the characteristics of wide absorption bandwidth, high absorption rate and dynamic adjustability, can realize more than 90% of efficient absorption in the frequency band of 2.28-4.68 THz, and can adjust the Fermi level of the graphene by externally applying bias voltage to realize rapid switching between the absorption state and the reflection state. The device is suitable for various application scenes such as terahertz communication, sensing and stealth.

A modulated laser is described, comprising a laser (30) optically coupled to a modulator (50), the modulator (50) having an intrinsic region (52) comprising: a multi-quantum-well material (41); a field control layer (42) having a doping density to enhance the electric field in the multi-quantum-well material; and a collection layer (43) having a band gap higher than that of the multi-quantum-well material (41). Combining the field control layer and the collection layer in the intrinsic region of the modulator of the modulated laser eliminates the need for a trade-off between high speed and low external bias in the modulated laser.

The application relates to a second-order adjustable transistor with a time-domain programmable characteristic and a preparation method thereof. The transistor comprises an insulator substrate, a gate bottom electrode, a ferroelectric blocking layer, a floating gate layer, a tunneling layer, a channel layer and a source and a drain, wherein the blocking layer is a ferroelectric material layer with an electrically programmable polarization state. Through the coupling of the ferroelectric polarization effect and the floating gate charge capture mechanism, the Schottky barrier height at the floating gate interface is regulated, thereby changing the release dynamics of photo-generated carriers, realizing the adjustable relaxation time of photo-generated carriers in the millisecond to second range, and realizing the time-domain programmable regulation of multiple different time factors without the need of a continuous external bias voltage. The device breaks through the limitation of a single time factor of a neuromorphic device and is suitable for in-situ computing scenes such as multi-speed motion perception.

The application discloses an X-ray detection composite material structure and a preparation method thereof. The composite material structure is composed of a conductive substrate (ITO glass), a nickel oxide (NiOx) nanostructure, a lead bromide formamidine (MAPbBr3) single crystal and an upper electrode. The preparation method comprises batching, a liquid phase reaction method and a solution method single crystal growth. The composite material structure prepared by the application can realize self-driven X-ray detection, that is, converts incident X-rays into current signals without an external bias voltage. The application has the advantages of low detection limit, wide detection energy range, high resolution, rapid response, good linearity and low manufacturing cost, and can be applied to X-ray detection, X-ray imaging, light sensors and many other fields.

This invention discloses a colloidal quantum dot dual-mode detector and its fabrication method. The colloidal quantum dot dual-mode detector comprises, from bottom to top, a substrate, a bottom electrode, a photodiode layer, an electric field modulation layer, a gain device layer, and a top electrode, stacked sequentially. Through an innovative vertically stacked bandgap design, this invention integrates a colloidal quantum dot photodiode and a multi-junction gain structure within a single device for the first time. The device intelligently modulates the direction of the internal electric field using an external bias voltage, achieving precise and rapid switching between high-gain weak-light detection and high-linearity strong-light detection modes. It also fundamentally suppresses dark current, solving the problems of excessive noise and poor stability in traditional gain devices. Furthermore, the device maintains high response speed and excellent stability while possessing a compact structure and high compatibility with existing planar processes, demonstrating excellent process compatibility and large-scale fabrication potential, providing a stable and reliable technical foundation for the development of high-resolution infrared imaging devices.

The application discloses a photoelectric detection system based on pyroelectric optoelectronic effect, which comprises a self-powered detector, a light modulation unit and a signal processing and translation unit; the light modulation unit is used for modulating information of excitation light according to a modulation instruction output by an instruction controller, and generating an encoded light signal carrying original information; the self-powered detector is used for receiving the encoded light signal based on pyroelectric optoelectronic effect without external bias, and generating a current signal corresponding to the encoded light signal; and the signal processing and translation unit is used for processing the current signal, translating and outputting the original information. The application can realize integrated detection and decoding of optical information, improve system integration and reduce power consumption.

The present invention relates to a read sense amplifier circuit and system that enables read operations over a wide power range by using a low reference resistor and securing gain through a two-stage operational amplifier circuit, and can also detect low fuse resistance to secure a sensing resistance margin and improve yield, and a memory cell read method using the same. The above read sense amplifier circuit comprises a current mirror circuit stage that receives a reference current from an external bias circuit and mirrors the reference current through a plurality of paths, a reference resistor stage including a reference resistor and an NMOS transistor that activates the reference resistor, a precharge circuit stage that receives a precharge signal and precharges a reference bit line connected to the reference resistor based on the precharge signal, an amplifier circuit stage that senses cell data for a cell corresponding to the selected fuse using the voltage difference between the resistance of the selected fuse corresponding to the selected cell and the reference resistor, and a buffer circuit stage that outputs the sensed data, wherein the amplifier circuit stage includes a plurality of PMOS transistors, and at least one input stage of the plurality of PMOS transistors of the amplifier circuit stage may be electrically connected to a connection resistor.

The application discloses a kind of multi-field regulated vector optoelectronic logic device and preparation method thereof, belong to vector optoelectronic logic device technical field, by integrating two-dimensional bismuth selenide material on LNOI substrate, using the sensitive characteristics of two-dimensional bismuth selenide material photo-thermal-electric response to laser position, power and external bias, a kind of multi-field regulated vector optoelectronic logic device is prepared, and vector optoelectronic logic device can realize different logic input values by regulating laser light source position, laser power size and external bias, so as to realize the output value of different size and vector direction photoelectric current.

The application relates to the technical field of integrated circuits, and provides a dynamic reference voltage amplification integrated circuit, which comprises a dynamic reference voltage circuit and a double-path output amplification circuit, the dynamic reference voltage circuit comprises ports VB, VINF1 and VREF1, the double-path output amplification circuit comprises ports VINF2, VREF2, VIA and VRA, the port VB is an input port of external bias voltage vb, the ports VINF1 and VINF2 are input ports of input voltage vinf, the port VREF1 is connected with the port VREF2, the port VRA is an output port of amplified dynamic reference voltage vr, the dynamic reference voltage circuit is adapted to generate corresponding reference voltage vref according to the input voltage vinf, and the double-path output amplification circuit is adapted to amplify and output the input voltage vinf and the dynamic reference voltage vref. The application can generate corresponding reference voltage according to the input voltage, that is, output dynamic reference voltage, so that a sufficient voltage difference is kept between the input voltage and the reference voltage, and the power consumption of the system and the demand of the power supply voltage for the normal operation of the system are reduced.

This invention discloses a portable high-flux-rate synchrotron radiation X-ray air kerma measurement device. This invention relates to the field of X-ray air kerma measurement technology, and proposes the following solution: It includes a silicon photodiode, a front shielding plate, a middle frame, and a rear shielding plate. A detector window is provided at the center of the front shielding plate, and a beryllium plate is mounted on the back of the detector window. The silicon photodiode is fixedly mounted on a base, which is also fixedly mounted on the front shielding plate. Mounting holes are provided on the rear shielding plate. This invention, by being installed within the front, middle, and rear shielding plates, possesses the characteristics of miniaturization and portability, making it suitable for small laboratories and portable use. Unlike free air ionization chambers, silicon photodiodes have high quantum efficiency, low dark current, strong radiation resistance, insensitivity to external magnetic fields, and do not require external bias voltage for measurement. Furthermore, their small size makes them easy to move.

The invention relates to the technical field of analog integrated circuit design, and discloses a dynamic amplifier and an analog-to-digital converter. The dynamic amplifier comprises a main amplification module, a clock control module and a bias module; the output end of the bias module is respectively connected with the first input end of the main amplification module and the clock control module; the second input end of the main amplification module is connected with the output end of the preceding-stage residual error subtractor; and the clock control module is connected with the third input end of the main amplification module. A first clock signal output by the clock control module is used for coordinating work, the bias module combines the clock signal and an external bias signal to generate a control signal, and the main amplification module amplifies a differential signal according to the control signal and the clock signal; a dynamic amplifier is adopted to replace a high-gain high-bandwidth operational amplifier and an auxiliary operational amplifier in a traditional closed-loop structure, and the problem of high power consumption caused by such elements is avoided.

The invention relates to the technical field of terahertz metamaterials, and provides a graphene-VO2 composite film tunable terahertz wave absorber. The wave absorber sequentially comprises a VO2 resonance layer, a graphene patch layer, a dielectric layer and a metal grounding layer from top to bottom, and the overall thickness of the wave absorber is 1t. And the structure is compact. The graphene Fermi level and the VO2 phase state are independently regulated and controlled through external bias voltage, and instantaneous switching of absorption frequency spectrums is achieved: when the graphene Fermi level is 0 eV and VO2 is in a metal state, the absorptivity of the device within the frequency band of 1.92-7.22 THz is larger than or equal to 90%, and the relative bandwidth is 115%; when the Fermi level of graphene is increased to 0.9 eV and VO2 is converted into an insulated state, the absorptivity of the device within the frequency band of 5.13-6.58 THz is larger than or equal to 90%. And meanwhile, the absorber has excellent polarization insensitivity and wide-angle incidence characteristics. The invention has the advantages of ultrafast speed, reconfigurability, low power consumption and flexible substrate compatibility, can be widely applied to terahertz imaging, intelligent stealth and adjustable filter devices, and provides a new generation of core function unit for a terahertz system.

The application belongs to the technical field of wide band gap semiconductor photoelectric detection, and particularly relates to a NdZnO-based high-suppression-ratio self-powered solar-blind ultraviolet photodetector and a preparation method thereof, realizes accurate band regulation of Nd2O3, red shifts the absorption cutoff edge from 215 nm to 280 nm, and perfectly matches the solar-blind ultraviolet band. Meanwhile, a p-Gr / i-NdZnO / n-Si double heterojunction structure forms two directionally coordinated built-in electric fields, and the photo-generated carriers can be separated and collected quickly without external bias, effectively solving the problem of excessively high resistivity of Nd2O3, and realizing self-powered work under 0V bias. The preparation method adopts room-temperature magnetron co-sputtering and graphene wet transfer process, and the whole preparation process is completed at room temperature, without complex high-temperature equipment, and the process parameters are controllable and good in repeatability, and the method is suitable for large-scale industrial production.

The application discloses a kind of photo-assisted stripping GaN film and its device method and system, belong to optoelectronic device preparation technical field, including the following steps: provide from bottom to top in turn for substrate, GaN sacrificial layer and target layer epitaxial structure;Exposure at least partial area of GaN sacrificial layer is carried out to epitaxial structure to process, and make GaN sacrificial layer and anode electric connection;Epitaxial structure is placed in electrolyte, with sacrificial layer as anode, while applying external bias between anode and cathode, interface of electrolyte and epitaxial structure is irradiated with light simultaneously, and the redox reaction kinetics process of sacrificial layer is accelerated using photo-generated carrier effect, and then target layer is separated after rapid selective dissolution of sacrificial layer is realized.In the basis of traditional electrochemical stripping, specific wavelength range of light irradiation is introduced, etching process is significantly accelerated by photo-generated carrier effect, etching selectivity is improved, stripping time is shortened, and interface quality of film after transfer is improved.

The invention discloses a reconfigurable photoelectric logic gate based on a hafnium-based ferroelectric film pyroelectric effect, which comprises a substrate, two devices with the same structure are symmetrically arranged on the left side and the right side of the substrate, each device comprises a top electrode, a middle layer and a bottom electrode which are sequentially arranged from top to bottom, and the middle layer adopts a ferroelectric film; external bias voltage is applied to top electrodes of the two devices, and bottom electrodes of the two devices are grounded; a laser transmitter is arranged above the device; the pyroelectric effect of the ferroelectric film is utilized, and the device controls the polarization direction and the residual polarization intensity of the ferroelectric film by adjusting external bias voltage, so that pyroelectric current response is adjusted, and operation of five logic gates is realized. The ferroelectric polarization direction and the residual polarization intensity are controlled in real time by adjusting the external bias voltage, dynamic logic reconstruction of the device can be achieved, and the same device can dynamically switch five logic functions without hardware change.

The application discloses a kind of bias switchable bimodulus photodetectors based on two-dimensional van der Waals p-n heterostructure and preparation method thereof, belong to the technical field of photodetector, by the ingenious combination of asymmetric work function electrode and van der Waals p-n junction, the vertical heterostructure of "Gr / 2H-MoTe2 / alpha-In2Se3 / Au" is designed, only simple change external bias polarity, it can realize instant reversible switching between photovoltaic mode and photoconductive mode, specifically, extremely high internal gain and ultra-low noise performance can be obtained in photoconductive mode, the dark current in photovoltaic mode reaches the order of magnitude of fly, while having excellent rectification characteristic and open-circuit voltage, realize the true sense of self-powered high-speed detection.The device of the application does not need ion doping, complex epitaxial growth or multi-gate regulation, easy to scale preparation and array integration.

The invention discloses a two-dimensional wave beam regulation and control broadband filtering antenna array driven by a No-en matrix and an adjustable phase shifter. The two-dimensional wave beam regulation and control broadband filtering antenna array comprises a No-en topology broadband wave beam forming network, a phase difference adjustable broadband power division phase shifting network, a broadband filtering antenna array and an input port. The Neen topological beam forming network is composed of a multi-stage co-directional output broadband directional coupler, an open-short circuit stub loading transmission line and a U-shaped transmission line, and is used for realizing multi-beam forming in the horizontal direction; the phase difference adjustable broadband power division phase shift network is composed of a three-wire coupling broadband power divider and a difference adjustable phase shifter, 360-degree continuous adjustable phase difference output within the broadband range is achieved by adjusting external bias voltage, and beam adjustment in the vertical direction is achieved. The broadband filtering antenna array adopts an end-on-fire structure, combines a folded microstrip line and a coplanar waveguide feed form, and has broadband radiation and filtering characteristics.