173results about How to "High conductance" patented technology

Methods for forming a diffusion barrier on low aspect features of an integrated circuit include at least three operations. The first operation deposits a barrier material and simultaneously etches a portion of an underlying metal at the bottoms of recessed features of the integrated circuit. The second operation deposits barrier material to provide some minimal coverage over the bottoms of the recessed features. The third operation deposits a metal conductive layer. Controlled etching is used to selectively remove barrier material from the bottom of the recessed features, either completely or partially, thus reducing the resistance of subsequently formed metal interconnects.

A gas supply device 3 includes a device body 31 forming a substantially conical gas-conducting space 32 for conducting gases therethrough from a diametrally reduced end 32a of the space 32 to a diametrally enlarged end 32b thereof, gas introduction ports 61a to 63a, 61b to 63b, and 64, each provided near the diametrally reduced end 32a of the gas-conducting space 32 in the device body 31 to introduce the gases into the gas-conducting space 32, and a plurality of partitioning members 41 to 46 provided in the gas-conducting space 32 of the device body 31 to partition the gas-conducting space 32 concentrically. The partitioning members 42 to 46 arranged adjacently to each other at a radially outer side of the gas-conducting space 32 are greater than the adjacently arranged partitioning members 41 to 45 at a radially inner side in dimensionally diverging rate per partitioning member. Thus, internal gas flow channels of the gas supply device have high gas conductance and enhanced gas replaceability, compared with those of the conventional gas showerhead.

An implant assembly comprises an elongated pusher member, and an implantable device (e.g., a vaso-occlusive device) mounted to the distal end of the pusher member. The implant assembly further comprises an electrolytically severable joint disposed on the pusher member, wherein the implantable device detaches from the pusher member when the severable joint is severed, and a return electrode carried by the distal end of the pusher member (e.g., a coil disposed about the pusher member) in proximity to, but electrically isolated from, the severable joint. The implant assembly further comprises a terminal carried by the proximal end of the pusher member in electrical communication with the severable joint.

A modified planar Low Temperature Co-Fired Ceramic (LTCC) high conductance inductor, embedding a large cross section conductor, supports a stacked arrangement of heat spreader, inductor and active device layers. Interlayer electrical connections connect the layers. Optionally, a DC-DC converter includes the modified planar LTCC high conductance inductor, embedding a large cross section conductor, supporting a stacked arrangement of heat spreader, capacitor and active device layers, the active devices layer including the switching transistors. The active devices layer may include semiconductor dies embedded in a substrate.

Plasma containment is achieved within a region by a containment plate while gas is allowed to flow through this region by openings in the plate. The openings in the plate are larger in two of the cross-sectional dimensions parallel to the plate surface than the thickness of the dark space or plasma sheath. The openings of the plate are wider nearest the source of the electromagnetic energy in order to attenuate the electromagnetic fields and thereby prevent build up of deposits which would block the flow gas through the plate.

Radio frequency (RF) connectors and electronics housings and packages employing one or more inventive RF connector(s) provided herein utilize a ground spring to achieve improved conductivity of the ground signal by making a plurality of contacts with a ferrule member of the RF connector's hermetic feedthru and a plurality of contacts with the electronics housing or package at points adjacent to an air dielectric. Ground springs used in connection with the present RF connectors maintain predetermined spring properties under compression and/or extreme environmental conditions, including thermal fluctuations, and therefore may be suitably employed in aircraft and spacecraft.

The invention relates to a method for preparing a high-specific surface area graphene material by utilizing strong base chemical treatment and belongs to the technical field of preparation of graphene materials. By reacting strong base with carbon at high temperature to further perform chemical treatment on graphene powder obtained through thermal treatment or microwave irradiation, nano-scale micropores are rapidly and massively corroded on the surface of graphene, and the specific surface area is greatly improved. Meanwhile, the graphene can be reduced through high-temperature treatment; therefore, high conductivity of the obtained material is guaranteed.

An electrode formed using a transparent conductive oxide is likely to be crystallized by heat treatment performed in the manufacturing process of a semiconductor device. In the case of a thin film element using an electrode having a significantly uneven surface due to crystallization, a short circuit is likely to occur and thus reliability of the element is degraded. An object is to provide a light-transmitting conductive oxynitride which is not crystallized even if subjected to heat treatment and a manufacturing method thereof. It is found that an oxynitride containing indium, gallium, and zinc, to which hydrogen atoms are added as impurities, is a light-transmitting conductive film which is not crystallized even if heated at 350° C. and the object is achieved.

The invention relates to a negative electrode material used for a lithium battery and a preparation method and application thereof, the negative electrode material includes a conductive substrate material layer and a silicon based thin film material layer, the silicon based thin film material layer contains one or more components selected from the group consisting of silicon element, SiOX and silicon alloy, wherein, 0 < X =< 2; in the silicon based thin film material layer, silicon accounts for 10-100% of the weight of the silicon based thin film material layer; the silicon based thin film material layer is a thin film formed by regular and/or irregular columnar and/or fibrous micro nano naps, wherein the micro nano naps are connected with each other by root parts, and the root parts of the micro nano naps are connected with the conductive substrate material layer; gaps are existed among the micro nano naps, and the porosity among the micro nano naps is 2%-98%; the diameter size of the micro nano naps is 1 nm to 10 mum, and the thickness of the silicon based thin film material layer is 50 nm-10 mum.

Disclosed are keeper circuits for electronic circuits that selectively maintain the voltage level of an intermediate circuit node at a desired level. In one exemplary embodiment, a keeper transistor either provides current or drains current from the intermediate node to maintain the desired voltage level in response to a signal to do so. The keeper circuit works against a leakage current that either drains current from the node or supplies current to the node. A current-setting transistor is coupled in series with the keeper transistor to set the maximum current through the keeper circuit to a value that is related to this leakage current, preferably tracking the leakage current. With this construction, the current-setting transistor is able to track variations in the leakage current caused by variations in the manufacturing process, and thereby provide dynamic leakage compensation.

A photonics assembly (8-16) is housed within an hermetically sealed container (24) mounted within an outer container (20), and is cooled by a fluidic arrangement comprising a liquid flow path (28) defined between the outer container and the sealed container, the outer container having a liquid inlet and a liquid outlet (30, 32), whereby cooling liquid can flow around the hermetically sealed container to remove heat. The photonics assembly including photonics devices, has a composite thermally conductive substrate (17, 19) contacting a thermally conductive wall (22) of the sealed container, whereby the cooling liquid cools said photonics devices. Liquid flow passageways (48-66) are provided in wall (22) and substrate (17, 19) for improving fluidic cooling.

The invention discloses a P-type graphene/N-type germanium nanocone array schottky junction infrared photoelectric detector and a preparation method thereof. The preparation method is characterized by comprising the following steps of forming an insulating layer on the front face of an N-type germanium basal layer in an evaporation manner by taking the N-type germanium basal layer as a base region of the photoelectric detector; arranging an N-type germanium nanocone array on the upper surface of the N-type germanium basal layer; transferring P-type graphene to the N-type germanium nanocone array covered with the insulating layer; coating the P-type graphene with indium tin oxide (ITO) nano-particles in a spin manner to realize a P-type graphene/N-type germanium nanocone array schottky junction-based photodiode. According to the infrared photoelectric detector disclosed by the invention, by utilizing the structure of the germanium nanocone array and the characteristic of the surface plasma resonance of the ITO nano-particles, the ability of absorbing light is enhanced, and the ability of responding to light is improved; the preparation method disclosed by the invention is simple, is suitable for mass production, and can be used for preparing the infrared photoelectric detector which has high light absorption ability and is high in photoelectric conversion efficiency, and a foundation is laid for applying the germanium nanocone array structure to the photoelectric detector.

The invention discloses a preparation method for a double quaternary ammonium side long chain anion-exchange membrane. The preparation method is characterized in that a dual-functional monomer with both tertiary amine group and quaternary ammonium group performs nucleophilic substitution on the main polymer chain with live benzyl bromine, benzyl chloride or chlorine acyl group, so as to obtain the double quaternary ammonium side long chain anion-exchange membrane. The raw materials are cheap and are easy to obtain, the preparation method is simple and is applicable to large scale industrial production, and the prepared anion-exchange membrane has the advantages of high ion conductivity, long service life, excellent mechanical property, and good solubility.

A system and methods are provided for testing anode integrity during vehicle operation. In one example described, the system and methods allow for anode leak tests during vehicle operation based on a flow of hydrogen into a fuel cell, the flow of hydrogen into the fuel cell maintaining the vehicle power while the leak test is performed. The methods further allow for operational adjustments responsive to the leak test, which may include controlling the vehicle power to manage vehicle operations in the presence of a hydrogen leak in some instances.

The present invention provides a means of greatly reducing interferences from mercury vapor, UV-absorbing compounds and water vapor in the measurement of ozone by UV absorbance. A heated graphite scrubber destroys greater than 99% of ozone passing through it while reducing biases from typical atmospheric UV-absorbing interferents by large factors compared to conventional ozone scrubbers. Substitution of a heated graphite scrubber in place of traditional ozone scrubbers such as hopcalite, metal oxides and heated silver scrubbers, results in a more accurate measurement of ozone by reducing the responses to UV-absorbing interferences and water vapor. The heated graphite scrubber also may be used in combination with other ozone sensors, such as electrochemical and HMOS sensors, to provide a reference measurement with ozone selectively removed and thus greatly reduce contributions from interfering species in those measurement devices as well.

The invention discloses a preparation method of graphene. Specifically, graphite oxide prepared by existing technology is dispersed in a green reducing agent, and oxygen on the graphite oxide is removed through an unbalance reaction in hot water, so that the graphite oxide is reduced into graphene. The graphene prepared by the method provided by the invention has low oxygen content and high conductivity; the method has advantages of simple operation, low cost and high efficiency, and really realizes graphene preparation in kilogram level; no reducing agent severely harmful to the environment or strongly toxic is used; therefore, the method causes no environmental pollution, greatly simplifies the growth process, suits industrial production, and has potential application value in the fields based on graphene.

An organic electroluminescent device includes an anode, a cathode and an organic functional layer between the anode and the cathode, in which at least one of hole injection layer, hole transport layer and electron transport layer includes a host material and an inorganic inactive material doped in the host material, and the inorganic inactive material is a halide, oxide or carbonate of metal.

A vacuum pump system includes at least one high-vacuum pump, a fore-vacuum pump, and at least one intermediate pump, arranged between the at least one high-vacuum pump and the fore-vacuum pump and having its inlet connected directly and exclusively with the outlet of the high-vacuum pump.

The invention provides a trivalent chromium electroplating solution of a sulfate system. The trivalent chromium electroplating solution is characterized by comprising the following components in molarconcentration (mol/L): chromium sulfate0.2-0.6, potassium sulfate 0.5-1.5, ammonium bromide 0.02-0.5, boric acid 0.5-1.2, sodium hypophosphite 0.1-1, ferrous sulfate 0.01-0.1, complexing agent 0.2-2.0, thickening agent 0.01-0.5 and the balance of water. The invention also discloses an electroplating method for the electroplating solution. Compared with the prior art, the electroplating solution and the electroplating method have the advantages that: the electroplating solution is clean and pollution free, the thickness of the plating layer reaches 20 to 80mu m, the plating layer is smooth with few cracks and high bonding force, the source of raw materials is rich, the cost is lower, the performance-to-price ratio is good, the electroplating solution can be continuously used for electroplating for 0.5 to 5 hours, the hardness of the plating layer is 600 to 700HV, and after thermal treatment, the hardness of the plating layer can reach 1,200HV.