P-type graphene/N-type germanium nanocone array schottky junction infrared photoelectric detector and preparation method thereof

Abstract

The invention discloses a P-type graphene / N-type germanium nanocone array schottky junction infrared photoelectric detector and a preparation method thereof. The preparation method is characterized by comprising the following steps of forming an insulating layer on the front face of an N-type germanium basal layer in an evaporation manner by taking the N-type germanium basal layer as a base region of the photoelectric detector; arranging an N-type germanium nanocone array on the upper surface of the N-type germanium basal layer; transferring P-type graphene to the N-type germanium nanocone array covered with the insulating layer; coating the P-type graphene with indium tin oxide (ITO) nano-particles in a spin manner to realize a P-type graphene / N-type germanium nanocone array schottky junction-based photodiode. According to the infrared photoelectric detector disclosed by the invention, by utilizing the structure of the germanium nanocone array and the characteristic of the surface plasma resonance of the ITO nano-particles, the ability of absorbing light is enhanced, and the ability of responding to light is improved; the preparation method disclosed by the invention is simple, is suitable for mass production, and can be used for preparing the infrared photoelectric detector which has high light absorption ability and is high in photoelectric conversion efficiency, and a foundation is laid for applying the germanium nanocone array structure to the photoelectric detector.

Description

technical field [0001] The invention belongs to the field of semiconductor photoelectric detection, in particular to a P-type graphene / N-type germanium nanocone array Schottky junction infrared photodetector and a preparation method thereof. Background technique [0002] Infrared radiation is electromagnetic waves with wavelengths between visible light and microwaves, which cannot be detected by the human eye. To detect the existence of this radiation and measure its strength, it must be transformed into other physical quantities that can be detected and measured. Generally speaking, any effect caused by infrared radiation irradiating an object can be used to measure the intensity of infrared radiation as long as the effect can be measured and is sensitive enough. [0003] Infrared detectors are photosensitive devices that can convert invisible infrared radiation into measurable signals. They are suitable for various environments, easy to detect, easy to integrate, low powe...

AI Technical Summary

Problems solved by technology

However, the current photodetectors based on germanium materials have slow response speed, low specific detection rate, large dark current and complicated device fabrication process.

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