177 results about "Photoelectric effect" patented technology

The invention discloses an ultraviolet laser enhanced plasma electrolytic polishing method for an aluminum-based silicon carbide composite material, which is characterized in that the conductive performance of a reinforced phase SiC material is locally improved by utilizing the synergistic effect of the local thermal effect and the photoelectric effect of ultraviolet laser, and meanwhile, uniform-speed polishing of a metal aluminum matrix and the reinforced phase SiC material is achieved by virtue of plasma discharge. And the machining efficiency is obviously improved, a machined surface with higher quality compared with traditional machining and single plasma electrolytic polishing is obtained, and further application and popularization of the aluminum-based silicon carbide composite material are facilitated.

The invention discloses a quantum partial discharge detection system and method based on single photon measurement. The system comprises a photoelectric detection module and an information transmission and processing module which are connected in pairs. A free space light collection unit in the photoelectric detection module is used for converging photons of partial discharge radiation and guiding the collected photons to a classic weak light detection unit and a single photon detection unit respectively; the classic weak light detection unit is used for converting an optical signal into an electric pulse signal based on an internal photoelectric effect; the single-photon detection unit is used for detecting extremely weak light and even single-photon events and outputting discrete electric pulse signals. The classical weak light detection unit and the single photon detection unit operate in parallel, partial discharge optical detection with a wide dynamic range and a high signal-to-noise ratio is realized through a signal fusion and processing algorithm, electromagnetic interference is effectively inhibited, and a more comprehensive and reliable monitoring means is provided for evaluation of the insulation state of power equipment.

The invention relates to a copolymerized polyurethane material with a photo-electro-mechanical effect as well as a preparation method and application thereof, and belongs to the technical field of self-powered energy conversion. The preparation method comprises the following steps: S1, synthesizing bis (p-hydroxyethyl) azobenzene; s2, synthesis of azobenzene polyurethane is carried out; s3, synthesis of diethanol amine bromine salt; s4, synthesizing quaternary ammonium salt ionic liquid based polyurethane; s5, synthesizing azobenzene-quaternary ammonium salt ionic liquid copolymerized polyurethane; and S6, preparing the copolymerized polyurethane material. In the application which is prepared from the copolymerized polyurethane material and has the photoelectric effect, the quaternary ammonium salt ionic liquid is used for replacing imidazole ionic liquid, so that the influence of cytotoxicity of the quaternary ammonium salt ionic liquid can be effectively weakened or avoided, and the quaternary ammonium salt ionic liquid can be directly used as a nano-generator without polarization treatment and has better flexibility and ductility.

The invention relates to an InP-based back incidence coplanar electrode position sensitive detector, which belongs to the technical field of photoelectric detectors, and is characterized in that an array is formed by a plurality of back incidence PSD units, the upper layers of the back incidence PSD units share a cathode, and an innovative structure capable of generating a better photoelectric effect is adopted; a common cathode layer, a P-type heavily doped layer for ohmic contact, a high-resistance silicon substrate layer and an InP dioxide substrate layer are sequentially arranged along the direction of incident light, a photosensitive area, a frame area and an isolation area are sequentially arranged on the lower portion of the high-resistance silicon substrate layer from inside to outside, and metal anodes are implanted in the positions of four end points of the InP dioxide substrate in contrast with the frame area. The structure greatly reduces the PSD array gap, eliminates the sampling blind area, has the advantages of simple signal processing, higher detection rate, high integration level, low cost, simple process and the like, and can be widely applied to the fields of wavefront detection, pose detection and the like to meet the various requirements of manufacturing super-large target surface, high-speed and high-density detectors and the like.

The invention provides a preparation method and application of a photocatalytic microorganism-nano material heterozygote. The heterozygote is formed by compounding electroactive bacteria Shewanella oneidensis MR-1 and a nano material CNx with a photoelectric effect, degradation of antibiotics such as tetracycline and the like is accelerated by utilizing photo-induced electrons and holes generated by excitation of the CNx under a natural illumination condition, inhibition of the antibiotics on microbial activity is relieved, the microbial metabolism efficiency is improved, and the degradation rate of antibiotics such as tetracycline and the like is increased. Therefore, nitrogen and phosphorus elements in the wastewater are rapidly induced to form magnesium ammonium phosphate crystals, and synchronous antibiotic degradation and nitrogen and phosphorus resource recovery are realized. The method is easy and convenient to operate, environmentally friendly and high in phosphorus recovery efficiency, the obtained magnesium ammonium phosphate crystals are controllable in grain size and excellent in quality, and the method is suitable for resourceful treatment scenes of antibiotic-containing organic pollutants such as breeding wastewater and has good application and popularization prospects.

The disclosure relates to a method of manufacturing an avalanche photodetector (APD) (100). The method comprises: providing a silicon-on-insulator substrate comprising an oxide layer (101) and a silicon layer (102) disposed on the oxide layer, the silicon-on-insulator substrate comprising a central region (110) in which an n+ doped layer (103) is embedded in the silicon layer, an embedded intrinsic layer (104) is overlaying the n+ doped layer and an intrinsic multiplication layer (105) is overlaying the embedded intrinsic layer and the n+ doped layer; forming in the silicon layer on the central region, by a thermal drive-in process, a p+ doped charge layer (106) above the intrinsic multiplication layer, wherein the p+ doped charge layer forms with the embedded intrinsic layer, the intrinsic multiplication layer and the n+ doped layer a PIN junction of the APD which is configured to cause a photoelectric effect to convert light energy to electrical energy; and depositing on the central region a germanium absorption layer (107) overlaying the p+ doped charge layer, the germanium absorption layer being configured to function as a light absorption layer to absorb light.

A superconducting array ion instrument, the invention relates to the technical field of ion generators; a treatment head inner cover is embedded inside the treatment head body, a sapphire lens and a conductive head are embedded in the treatment head inner cover from left to right in sequence, the right end of the conductive head is inserted and fixed in a fixing plate, the fixing plate is embedded and fixed in the right side of the treatment head inner cover, the left end of the conductive needle is inserted in the fixing plate and is contacted with the right side wall of the conductive head, the right end of the conductive needle is inserted in the fixing plate and is arranged in contact with the right side wall of the conductive head, the right end of the conductive needle is inserted in a circuit board, a treatment head cover is arranged on the right side of the circuit board, and the positioning column on the left side of the lower part of the treatment head cover passes through the arc groove at the bottom of the circuit board, and is plugged and fixed with the positioning sleeve at the bottom of the treatment head inner cover. Diseases are treated directly through the photoelectric effect, and the effect of beauty and skin care can be achieved after reasonable discharge treatment; it is effective for acne treatment, skin sterilization, scar inhibition and wound healing.

The utility model relates to the technical field of electron beam lithography, in particular to an electron emitter. The electron emitter comprises a patterned light source, a lens unit and a photoelectric material unit; the patterned light source comprises a light source and a pattern generator, the lens unit is arranged between the pattern generator and the photoelectric material unit, and the pattern generator is used for modulating light beams emitted by the light source; after a light beam emitted by the light source is modulated by the pattern generator, an optical pattern with light and shade changes is generated, the optical pattern is irradiated on the surface of the photoelectric material unit after being amplified and imaged by the lens unit so as to generate an external photoelectric effect, and an electron beam with the optical pattern is formed. According to the electron beam lithography device, electron beams with optical patterns can be sent into the electron optical system to directly carry out patterning electron beam lithography treatment, and exposure carried out in a point-by-point electron beam scanning mode in the prior art is not needed, so that the electron beam lithography efficiency is greatly improved by the electron beam lithography device.

The present application is to solve the problem that the optical characteristics of a plurality of LEDs cannot be inspected at the same time by a method of causing one of a pair of LEDs to emit light and causing the other to receive light, and using the current value of the current output by the photoelectric effect to inspect the optical characteristics of the LEDs. To solve the above problem, the present application proposes a test device provided with: an electrical connection portion electrically connected to the terminals of each of a plurality of LEDs that are test subjects; a light source portion that irradiates light to the plurality of LEDs at the same time; a measurement portion that measures a photoelectric signal that is photoelectrically converted by each of the plurality of LEDs with respect to the light irradiated by the light source portion and output via the electrical connection portion; and a determination portion that determines the good or bad of each of the plurality of LEDs based on the measurement result of the measurement portion.

The invention discloses an ultraviolet light modulated depletion type graphene field effect transistor (UV-GFET) and a preparation method thereof. The ultraviolet light modulated depletion type graphene field effect transistor sequentially comprises a Si / SiO2 substrate layer, a metal electrode layer, a graphene film sensing layer and a quantum dot doped insulated gate layer from bottom to top, and the top of graphene is covered with a polymethyl methacrylate (PMMA) organic matter thin layer containing quantum dots to serve as a gate insulating layer. When quantum dots in the PMMA thin layer release hole-electron pairs under the irradiation of ultraviolet light due to a photoelectric effect, the hole concentration is reduced and the conductivity is reduced after graphene absorbs electrons, so that the resistance of the GFET is increased, and the function of regulating and controlling the resistance of the depletion type graphene field effect transistor through ultraviolet light is realized.

The invention discloses a near-field radiant heat rectifier based on a high-frequency photoelectric effect, and belongs to the technical field of radiant heat transport regulation and control. The invention aims to solve the problems that an existing magneto-photo-thermal rectification scheme depends on a strong magnetic field, the size is large, integration is difficult, and electromagnetic interference exists. The invention provides a near-field radiant heat rectifier based on a high-frequency photoelectric effect. The near-field radiant heat rectifier comprises a heat emission layer, an emission end time modulation layer, a receiving end time modulation layer, a heat receiving layer and a nanometer displacement platform. A nanoscale vacuum gap is kept between the photoelectric modulation layers of the transmitting end and the receiving end through a nanometer displacement platform, and dielectric constants of the photoelectric modulation layers are subjected to high-frequency periodic modulation through a dual-mode integrated laser. The modulation phase difference is utilized to break the system time reversal symmetry, and an artificially synthesized magnetic field is introduced to realize near-field radiation heat rectification. The device has the advantages of compact structure, full light control, no magnetic interference and the like, and is suitable for being applied to practical engineering scenes of microelectronic heat dissipation, waste heat recovery, thermal logic circuits and the like.

The invention discloses a new energy photovoltaic cell panel protection device, and relates to the technical field of photovoltaic cell panels, and the device comprises a supporting frame which is arranged on the ground; the fixing frame is fixedly mounted at the top of the supporting frame; the supporting plate is fixedly mounted on the inner wall of the fixing frame; the photovoltaic panel is fixedly installed at the top of the supporting plate, and the photovoltaic panel is a device used for directly or indirectly converting solar radiation energy into electric energy through a photoelectric effect or a photochemical effect; the sliding rail is fixedly mounted on the surface of the fixing frame; the driving motor is mounted in the sliding rail in a sliding manner, and the driving motor linearly moves along the sliding rail; the fixing rod is fixedly installed on the surface of the driving motor, the connecting rod is fixedly installed on the surface of the fixing rod, and rainwater or sand and dust are prevented from entering from a gap between the protection covers, so that equipment is prevented from being damaged due to water inflow, and normal use is affected.

The invention provides a method for forming a semiconductor device. The method comprises the following steps of: acquiring an interface state forbidden band width between a semiconductor substrate and a gate dielectric layer; then, the wavelength of incident light is preset according to the interface state forbidden bandwidth; and carrying out ultraviolet irradiation treatment on the MOS device according to the preset wavelength of the incident light to enable the incident light to penetrate through the metal gate and the gate dielectric layer so as to adjust the threshold voltage of the MOS device. By carrying out ultraviolet irradiation treatment on the MOS device, an interface state defect between a semiconductor substrate and a gate dielectric layer and a defect state trap in the gate dielectric layer can be excited, so that a photoelectric effect is triggered, an electron hole pair is generated, a hole is easily captured by the interface state trap and the defect state trap, positive charges can be formed, and the photoelectric effect is improved. And the local electric field distribution is changed, so that the threshold voltage of the MOS device is adjusted.

The present invention relates to a device structure containing a simple fused-ring small molecule material, the structure comprising an active layer having a thickness of 500-600 nm. The active layer comprises a structure in which an electron donor material and an electron acceptor material are blended. The electron acceptor material has the following general structural formula: #imgabs0#. The above-mentioned material is applied to a photoelectric device structure, has a good photoelectric effect, and is suitable for devices with thicker active layers, thereby facilitating roll-to-roll industrial production.

The application discloses a crude oil water content analysis method and device. The method comprises the following steps: obtaining low, medium and high energy level light quantum detection data of a penetrating crude oil sample; calculating photoelectric effect cross section coefficients of low and medium energy levels, simultaneously solving oil, gas and water phase fractions and calculating a first mixed density; combining Compton reaction cross section coefficient of high energy level data to calculate a second mixed density; comparing the deviation of the two mixed densities, if the deviation is greater than a preset threshold, the detection time is automatically extended for re-measurement; if the deviation is still greater than the preset threshold, it is determined that the sample is in a gas-containing or non-full-liquid state, the high energy level calculation result is actively removed, and only the low and medium energy level data are used to solve the phase fraction and normalized output the final water content. The application innovatively introduces a density deviation check and a dynamic delay mechanism, effectively distinguishes and separates the gas phase interference, and realizes non-contact and high-precision automatic water content detection.

The application discloses an optical linear diameter measuring instrument, and belongs to the technical field of medical instruments. The measuring instrument comprises a measuring instrument body, a measuring unit, a clamping unit and a control unit, wherein the measuring unit comprises a measuring frame, the measuring frame is provided with a first laser receiving sensor and a first laser emitting area arranged on one diameter of a measured body, the measuring frame is provided with a second laser receiving sensor and a reflecting prism arranged on another diameter of the measured body, the measuring frame is provided with a second laser emitting area, a laser generator is arranged in the second laser emitting area or the first laser emitting area, and the measuring frame is provided with a first straight line module for controlling the laser generator to reciprocatingly move between the first laser emitting area and the second laser emitting area. The application further discloses an optical linear diameter measuring method. The test device of the application has the advantages of simple structure, small size, high test precision, perfect overall function and strong practicability, and can test a sample linear body through photoelectric effect without contacting the sample linear body.

[Problem to be solved by the invention] In a method of checking optical characteristics of one LED of a pair of LEDs that are to be checked by causing the one LED to emit light and receiving the light by the other LED, using a current value of a current output by a photoelectric effect, optical characteristics of a plurality of LEDs cannot be checked at once. [Solution] A test device includes: an electrical connection portion electrically connected to terminals of each of a plurality of light emitting elements that are to be tested; a light source portion that irradiates light to the plurality of light emitting elements together; a measurement portion that measures a photoelectric signal output from the plurality of light emitting elements by photoelectric conversion of light irradiated by the light source portion and via the electrical connection portion; an acquisition portion that acquires a correction map including a correction value for correcting unevenness in intensity of light irradiated by the light source portion to positions of each of the plurality of light emitting elements; and a determination portion that determines whether each of the plurality of light emitting elements is good or not based on a measurement result of the measurement portion and the correction map acquired by the acquisition portion.

To provide an inter-energy conversion power generation method that solves the problems that conventional power sources that generate power using photoelectric effect, such as solar cells, rely on an external light source of a device, making power generation unavailable at night etc. when the necessary light energy required for power generation.SOLUTION: A phosphorescent material, which has a material property of being able to convert electrical energy and light energy back and forth, is mixed in appropriate amounts and ratios with a highly conductive metal such as copper or aluminum, or a carbon-based good conductor such as a carbon allotrope and processed into powder or solution. This mixture is sealed inside a power generation device and temporarily energized from an external power source or irradiated by an external light source. Furthermore, the mixture enters a state in which light is emitted and electricity is generated simultaneously within the device (electrical energy and light energy are being converted back and forth). This problem is solved by using a power generation method that utilizes the chemical reaction (energy interconversion reaction) of this "mixture of phosphorescent materials and good conductors". The same effect can be achieved by using fluorescent materials, which are raw materials for fluorescent paints, or reflective materials, which are the raw materials for reflective materials, instead of phosphorescent materials.SELECTED DRAWING: None

The invention relates to the technical field of electrical equipment testing, and particularly provides a space charge detection device and method based on optical measurement. The space charge detection device based on optical measurement comprises a sensing acquisition array which is uniformly distributed around detected equipment in the circumferential direction, full-surrounding detection of space charges is achieved, collaborative design of four optical detection technologies is adopted, multi-dimensional detection of the space charges is achieved through the complementary effect of Raman scattering, the photoacoustic effect, LIBS and the photoelectric effect, and the detection accuracy of the space charges is improved. The detection limitation of a single technology is made up; according to the space charge detection method based on optical measurement, a space-time synchronization-weight distribution-feature fusion algorithm and a signal-to-noise ratio-based adaptive weight distribution fusion algorithm are adopted, space-time synchronization calibration and Kalman filtering are combined, the problems of space-time inconsistency and random errors of multi-source data are solved, and the precision of data fusion is improved.

The present application discloses an integrated circuit, which includes: a detection subcircuit, which is used to detect optical fault injection attacks through photoelectric effect, and the detection subcircuit can output a first signal when the detection subcircuit itself is attacked by optical fault injection; an auxiliary subcircuit, which is used to enable the detection subcircuit to output the first signal when the detection subcircuit itself is attacked by optical fault injection. In this way, the protection capability of the laser detection circuit can be assisted to be expanded, and technical support can be provided for reducing chip area and chip cost.

The invention discloses a PSD principle-based contact type ultra-high precision micrometer, which comprises a product shell, a cover plate is mounted at the top of the product shell through a screw, a laser head bracket and a precision ball sliding group are mounted on the inner wall of the product shell, a laser emission head is mounted in the middle of the laser head bracket, and a precision ball sliding group is mounted in the middle of the precision ball sliding group. A prism support is installed on the surface of a sliding block of the precise ball sliding set through a screw, an internal reflection prism is installed at the end, facing the laser emission head, of the prism support, and a ball bush assembly is installed at one end of the product shell. The PSD photoelectric position detection technology is adopted, the displacement of a laser incidence point is directly calculated through the semiconductor transverse photoelectric effect, the theoretical resolution can reach 0.05 micron, the response speed is increased to 500 Hz or above and is far higher than that of a traditional mechanical micrometer and a traditional grating type displacement sensor, and the ultra-precision machining requirement can be met.

To solve the problem that a conventional power supply such as a solar cell for generating electric power utilizing photoelectric effects cannot generate electric power in the night when the optical energy (light quantity) needed for power generation is unavailable, because it utilizes the light source outside of an apparatus.SOLUTION: A metal element having material properties known as the interconversion effect of electrical energy and optical energy and a metal having high conductivity or a carbon-containing good conductor such as carbon allotrope are processed into a powder or a liquid state and mixed together. This admixture is sealed in the inside of a power generating apparatus, and is powered on temporarily from an external power supply or irradiated from an external light source. As a result, interconversion of electrical energy and optical energy is performed in the apparatus. The problem is solved by a power generation method utilizing the chemical reaction of the admixture of the metal element used for energy conversion and the good conductor used for energy transmission.SELECTED DRAWING: None

The invention discloses a biological hybrid material as well as a preparation method and application thereof, and belongs to the technical field of environmental engineering and new materials. The activated sludge microbe loaded with positive electricity CQD and barium titanate loaded pre-oxidized MXene are combined to form the activated sludge microbe loaded with positive electricity CQD. The natural conditions of strong illumination and large day and night temperature difference in the plateau area are utilized to excite multiple effects, BTO generates a pyroelectric effect by utilizing the temperature difference, MXene and CQD generate a photothermal effect by utilizing the illumination, and TiO2 on the surface and CQD on the surface of microorganisms generate a photoelectric effect by utilizing the illumination. The synergistic effect of the effects not only effectively overcomes the inhibition of low temperature on microbial activity, but also remarkably improves the pollutant degradation efficiency. The material is particularly suitable for water purification in low-temperature areas such as the Qinghai-Tibet Plateau, efficient utilization of natural energy is achieved, and the biological treatment efficiency is remarkably improved.

The invention provides a single-photon avalanche diode unit and a preparation method, and the single-photon avalanche diode unit comprises a photoelectric effect region which is a region for generating a photoelectric effect. Wherein the photoelectric effect region comprises a depletion region and an oxide filling region; the depletion region is used for absorbing photons and generating carriers, and the carriers in the depletion region are used for triggering avalanche breakdown; the oxide filling region is formed by filling an oxide, and the oxide filling region is a region exceeding the depletion region in the photoelectric effect region; a doped thin layer is arranged at the region junction of the depletion region and the oxide filling region, the polarity of the doped thin layer is the same as that of a target well region, and the target well region is a well region far away from an electrode in the depth direction in a main junction of the single photon avalanche diode unit. According to the technical scheme, the problems of time jitter and delay pulse of the SPAD can be solved.

The invention relates to a thermophotovoltaic device, comprising: - an absorber layer configured to absorb photonic radiation, particularly daylight, within a focal spot as a part of a surface of the absorber layer and convert it into heat energy; - an emitter layer positioned adjacent to the absorber layer or integrally formed with it, configured to emit thermal radiation due to the heat energy via a surface of the emitter layer; - at least one photovoltaic cell positioned to receive the emitted thermal radiation from the emitter layer and convert it into electrical energy using the photoelectric effect; - a heat spreading layer embedded within the absorber layer and / or emitter layer configured to distribute heat energy lateral over the emitter surface.

This application provides a semiconductor structure, its manufacturing method, and an image sensor. The semiconductor structure includes: a substrate; an isolation structure formed on the surface of the substrate; the isolation structure includes an interlayer isolation structure and a regional isolation structure; a photoelectric functional layer disposed on the substrate; the photoelectric functional layer is used to realize photoelectric signal conversion based on the photoelectric effect; the photoelectric functional layer includes multiple photosensitive layers stacked at intervals along the normal direction of the substrate; the doping type of the photosensitive layer is opposite to that of the isolation structure; wherein, the regional isolation structure penetrates the photoelectric functional layer along the normal direction of the substrate, dividing the photoelectric functional layer into multiple photosensitive regions; the interlayer isolation structure is disposed between the photoelectric functional layer and the substrate, and between adjacent photosensitive layers. Through this application embodiment, the diffusion of photogenerated carriers between the photosensitive regions is reduced by utilizing the interlayer isolation structure and the regional isolation structure, thereby improving the imaging quality of the image sensor.

A multi-modality imaging system allows for selectable photoelectric effect and / or Compton effect detection. The camera or detector is a module with a catcher detector. Depending on the use or design, a scatter detector and / or a coded physical aperture are positioned in front of the catcher detector relative to the patient space. For low energies, emissions passing through the scatter detector continue through the coded aperture to be detected by the catcher detector using the photoelectric effect. Alternatively, the scatter detector is not provided. For higher energies, some emissions scatter at the scatter detector, and resulting emissions from the scattering pass by or through the coded aperture to be detected at the catcher detector for detection using the Compton effect. Alternatively, the coded aperture is not provided. The same module may be used to detect using both the photoelectric and Compton effects where both the scatter detector and coded aperture are provided with the catcher detector. Multiple modules may be positioned together to form a larger camera, or a module is used alone. By using modules, any number of modules may be used to fit with a multi-modality imaging system. One or more such modules may be added to another imaging system (e.g., CT or MR) for a multi-modality imaging system.

The invention discloses an identification method of an anti-misoperation induction cooker and an anti-misoperation electric ceramic cooker, and relates to the technical field of household appliances. The camera converts a received optical signal into an electric signal through a photoelectric effect, acquires an image according to a fixed frame rate, and identifies pixel change in a specified area; when the change exceeds a set threshold value, a signal is sent to a processor of the induction cooker or the electric ceramic cooker to indicate that an object moves at the moment; under the condition of normal illumination, the resistance value of a photoresistor of the light sensation identification circuit is reduced, and the voltage input into a processor in the induction cooker or the electric ceramic cooker is reduced, and under the condition of no illumination or dark light, the resistance value of the photoresistor is increased, and the voltage input into the processor in the induction cooker or the electric ceramic cooker is increased. An internal processor of the induction cooker or the electric ceramic cooker judges and recognizes the external environment illuminance according to the signal; the camera and the light sensation recognition circuit are additionally arranged on the induction cooker or the electric ceramic cooker, whether manual operation exists or not is judged from the environment and object characteristics, misoperation is avoided, and use safety is improved.

The invention provides a chiral detection method which is widely suitable for testing opaque materials and is convenient to use. The material chirality detection method disclosed by the invention adopts an ultrafast terahertz emission spectrum technology, and the technology is very mature and has been widely applied to the field of scientific research. A circular polarization modulation technology required for exciting the circular polarization photoelectric effect is one of the most basic optical technologies. Therefore, based on a mature technology system, reliable and stable operation of chiral detection testing is facilitated. Meanwhile, the method disclosed by the invention is an all-optical non-contact detection means, does not need a transparent sample, has low requirements on sample treatment and test environment, is high in test speed, is visual and readable in result, and is suitable for being used as a widely applicable and efficient material chiral detection method.

The application discloses a kind of cable-forming grease alarm system and method, including cable-forming component and monitoring alarm component, and the grease spraying gun of cable-forming component is installed on bracket and is coated with grease to the surface of reinforcing member, reinforcing member passes through bracket to cable-forming stranding table movement and completes grease spraying before entering to cable-forming stranding table;Monitoring alarm component photoelectric switch is installed on bracket, PLC controller is connected with photoelectric switch and alarm signal;The filling condition of reinforcing member is detected by the photoelectric effect of photoelectric switch, and the amount of grease on the surface of reinforcing member is obtained based on the digital signal sensed by PLC controller photoelectric switch to determine whether grease coating is normal, and start-stop of cable-forming action is controlled according to feedback.The above-mentioned mode, the application can monitor the grease condition on the surface of reinforcing member in real time online, ensure that grease filling is normal operation, determine grease filling stop by buzzer, facilitate timely inspection filling condition, meet cable core water seepage performance requirement, reduce worker labor intensity.