1644 results about "Photoelectric effect" patented technology

A method of evaluating a reservoir includes a multi-energy X-ray CT scan of a sample, obtaining bulk density and photoelectric effect index effect for the sample, estimation of at least mineral property using data obtained from at least one of a core gamma scan, a spectral gamma ray scan, an X-ray fluorescence (XRF) analysis, or an X-ray diffraction (XRD) analysis of the sample, and determination of at least one sample property by combining the bulk density, photoelectric effect index, and the at least one mineral property (e.g., total clay content). Reservoir properties, such as one or more of formation brittleness, porosity, organic material content, and permeability, can be determined by the method without need of detailed lab physical measurements or destruction of the sample. A system for evaluating a reservoir also is provided.

An optical monitoring circuit includes a photoelectric device such as a photo-detector that produces a signal in response to incident light thereon corresponding to a characteristic of the incident light such as intensity, or wavelength. A light source is disposed within the circuit for emitting a beam of light, a portion of which is to be incident upon the photoelectric device. The photoelectric device when reversed biased provides an output electrical signal from which the intensity of light from the light source impinging thereon can be determined. The photoelectric device when forward biased provides an output signal from which the temperature of the photoelectric device can be determined. A method and circuit are disclosed for calibrating out the unwanted effect of light from the light source affecting accuracy of the determined temperature derived from the output signal when the photoelectric device is forward biased.

A positron emission tomography detector for a multilayer scintillation crystal comprises a plurality of layers of scintillation crystals, a photoelectric detector system and an algorithm system, wherein the multilayer scintillation crystals comprises n layers of array scintillation crystals and m layers of continuous scintillation crystals, both n and m are integers which are greater than or equal to 1, the sum of n and m is smaller than or equal to 10, the array scintillation crystals are formed by arraying strip-type scintillation crystals along the width and length directions, the continuous scintillation crystals are scintillation crystals which have uncut inner parts, the array scintillation crystals and the continuous scintillation crystals are sequentially coupled along the height direction of the strip-type scintillation crystals to form the multilayer scintillation crystals, and the bottoms of the continuous scintillation crystals are coupled with the photoelectric detector system. The positron emission tomography detector can more accurately obtain the position and the time of energy deposition of gamma photon in the scintillation crystal, and has higher detection efficiency of the gamma photon, the spatial resolution, the time resolution and the flexibility of a positron emission tomographic imaging system can be improved when the positron emission tomography detector is applied to the positron emission tomographic imaging system, and further, the imaging quality of the system can be improved.

The invention relates to a solar broad-spectrum multicolor stroboscopic concentrating long-shot high-trapping LED lamp. Photoeffect is generated when sunlight strikes a solar panel and electric energy is stored in a storage battery through a control circuit; when an insect-trapping lamp is started to work, a special efficient LED lamp light source is developed and ultra-long distance LED lamp insect-attracting wavelength of a laser beam is determined; low-temperature plasma are generated by electric discharge; ultraviolet radiation exerts phototactic hormesis on pests to attract pests to jump on the lamp light source; a high-voltage killing net is arranged outside the light source to kill pests and ensure that the killed pests drop into a special pest bag, thereby killing pests; meanwhile, the arrangement of an LED street lamp light source and fishpond pest trapping are combined; power is cut off automatically when it rains; moreover, a device capable of clearing dead pests on the high-voltage electric net is arranged; and therefore, the solar broad-spectrum multicolor stroboscopic concentrating long-shot high-trapping LED lamp not only kills pests, but also protects the natural enemies of pests and maintains the balance of the biological chain to form a pollution-free 'physical disinsection method'.

The invention provides an InAs/GaSb superlattice infrared photoelectric detector and a manufacturing method thereof. The InAs/GaSb superlattice infrared photoelectric detector comprises a substrate, an epitaxy structure deposited on the substrate, an upper metal electrode formed above steps, a lower metal electrode formed under the steps and a passivation layer, wherein the epitaxy structure comprises an n-type doping buffer layer, an n-type electrode contact layer, a barrier layer, an intrinsic absorption layer, a p-type electrode contact layer and a cover layer, the steps are formed on two sides of the epitaxy structure through etching, the intrinsic absorption layer is composed of a plurality of periodical InAs/InSb/GaSb/ InSb superlattice structures. In the InAs/GaSb superlattice infrared photoelectric detector, InSb is respectively inserted into two interfaces of each superlattice period of the intrinsic absorption layer to form strained superlattices, the stress between the superlattices and the substrate is effectively balanced, the material growing quality is improved, and accordingly the photoelectric performance of the detector is improved.

Devices incorporating a single to a few-layer MoS₂ channels in combination with optimized substrate, dielectric, contact and electrode materials and configurations thereof, exhibit light emission, photoelectric effect, and superconductivity, respectively.

The invention discloses a stable photoelectric oscillator. The stable photoelectric oscillator comprises a laser device, an electro-optical modulator, a long optical fiber, a photoelectric detector, an amplifier, an electric band-pass filter, an electrically-controlled microwave phase shifter, a high-stability microwave source, a 2*1 wave combiner or directional coupler, a first 1*2 power divider or directional coupler, a second 1*2 power divider or directional coupler, a third 1*2 power divider or directional coupler and a phase locking control module, wherein the phase locking control module comprises a frequency mixer, an electric low pass filter and a servo control module, the output end of the frequency mixer is connected to the input end of the electric low pass filter, and the output end of the electric low pass filter is connected to the input end of the servo control module. According to the stable photoelectric oscillator, an electric injection of the external high-stability microwave source and a phase locking control mechanism are added based on a traditional single-loop OEO structure. Compared with the prior art, the stable photoelectric oscillator has the advantages that insertion loss of an optical link in a resonant cavity is not increased, the high signal to noise ratio of the photoelectric resonant cavity is maintained, and the structural complexity of the stable photoelectric oscillator is lower than that of an existing scheme. The stable photoelectric oscillator is easy to obtain.

The invention relates to an LCD device, a photoelectric device and a manufacture method thereof. The LCD device comprises a bending LCD panel and a backlight module, wherein the bending LCD panel includes an inner curved surface and an outer curved surface; the backlight module is arranged on the inner curved surface of the bending LCD panel and includes a bending optical film and a light source; and the bending degree of the bending optical film is substantially equal to that of the bending liquid display panel. Accordingly, the LCD device has flexibility. The LCD device of the invention is mainly composed of the bending LCD panel and the backlight module having the bending optical film, and the bending degree of the bending optical film is substantially equal to that of the bending LCD panel. Accordingly, the LCD device has flexibility to meet the more use requirement. Additionally, the fabrication method of the LCD device is compatible to prior art and technique, thus obviating the addition of extra equipment and the increase of cost.

A photoelectric attractive capturer for locusts is composed of a case body containing a group of vertical corrugated plates with gap between adjacent ones for dropping the locusts in it, a light source, and a locust collecting chamber under said gaps.

The invention discloses a silicon nanowire grating resonant enhanced photoelectric detector, which comprises a silicon substrate, a silicon oxide layer, an I-shaped mesa structure, a protective layer, a metal gate electrode and two photocurrent output metal electrodes, wherein the silicon oxide layer is manufactured on the silicon substrate; the I-shaped mesa structure is manufactured on the silicon oxide layer, two ends of the I-shaped mesa structure are provided with a P-type electrode and an N-type electrode, and a silicon nanowire grating resonant cavity structure is connected between the P-type electrode and the N-type electrode; the protective layer is manufactured on the surface and side faces of the I-shaped mesa structure, and electrode windows are formed on the P-type electrode and the N-type electrode at two ends of the I-shaped mesa structure; the metal gate electrode is manufactured on the protective layer of the silicon nanowire grating resonant cavity structure and is close to one side of the N-type electrode; and the two photocurrent output metal electrodes are manufactured in the electrode windows of the protective layer on the P-type electrode and the N-type electrode of the I-shaped mesa structure.

The invention relates to a full duplex cat eye reverse modulation recovery free space laser communication system, belongs to the technical field of wireless communication, and solves the problem of low transmission rate of the system in the prior art. A laser I and a transmitting data source are both connected with a DPSK (differential phase shift keying) modulator, the DPSK modulator and a laser II are both connected with an optical fiber amplifier I, two communication lights are amplified and then connected with a port a of a fiber circulator, a port b of the fiber circulator is connected with an optical antenna, a port c of the fiber circulator is connected with a photoelectric detector I, the photoelectric detector I is connected with a DPSK modulator I, a cat eye optical system is coaxially arranged with the optical antenna, an optical filtering beam splitter is arranged between the cat eye optical system and a laser collimating lens and forms an angle of 45 degrees with the cat eye optical system, the laser collimating lens is connected with a port d of a fiber circulator II, a port e of the fiber circulator II, an optical fiber amplifier II and the DPSK modulator II are sequentially connected, the other end of the DPSK modulator is connected with a port f of the fiber circulator II, and a photoelectric detector II is connected with the DPSK modulator.

The invention discloses an artificial synaptic device based on a photoelectric coupling memristor and a modulation method of the artificial synaptic device. The artificial synaptic device comprises an upper electrode, a lower electrode and a functional material layer, wherein the functional material layer is arranged between the upper electrode and the lower electrode, the upper electrode, the functional material layer and the lower electrode jointly form a sandwich structure, the functional material layer is made of a material having a photoelectric effect, the lower electrode is a transparent conductive electrode, an electrical signal is input through the upper electrode and the lower electrode, and an optical signal is input through the transparent conductive electrode. In the artificial synaptic device provided by the invention, light is introduced as a control signal of the other end except the electrical signal, two control ends of the artificial synapse device are expanded to three ends, the artificial synaptic device can generate resistance change under an external optical excitation signal by the additionally-arranged end, the artificial synaptic device can be configured to be in a plurality of resistance states correspondingly by selection and control of intensity, frequency and optical pulse time of the optical excitation signal, and various synaptic plasticity functions are correspondingly achieved.

The invention provides a photochromic device which changes color along with variation of solar ray intensity. An external electric field which controls color change is provided through an organic solar battery which is integrated in the same device. The photochromic device comprises a transparent non-conductive substrate, a transparent conducting layer, an organic solar battery material layer, an electrochromic material layer and an electrolyte layer, wherein the organic solar battery material layer at least comprises a positive layer, a negative layer and an organic photovoltaic conversion material layer. According to the photochromic device, electric power generated through photoelectric effects of the organic solar battery can provide electric power for the electrochromic layer and change of device color is automatically controlled through a light activated switch according to intensity of solar light. The photochromic device has the advantages of operating without additional power supply, being more energy saving and greatly reducing manufacturing costs due to the fact that external circuits are greatly simplified.

The invention provides a dual energy X ray detector which sequentially comprises a first photoelectric detector, a scintillator and a second photoelectric detector in the incidence direction of an X ray, wherein the first photoelectric detector and the second photoelectric detector are respectively arranged on the front end face and the back end face of the scintillator; the X ray penetrates through the first photoelectric detector and enters the scintillator; and the scintillator converts the incident X ray into visible light. The first photoelectric detector and the second photoelectric detector are used for receiving the visual light emitted by the scintillator and converting the visual light into electric signals. The relative difference between the low energy part and the high energy part of the energy spectrum of the X ray penetrating an object can be measured by using the dual energy X ray detector, and a basis for material recognition is provided.

This invention discloses one photoelectric reactor to degrade organic pollute and one method to remove the pollute assistant with catalyze reactor, wherein, the reactor is located with conductive multi-hole materials load compound semi-conductor photo catalyze positive and negative electrodes; the optimized catalyze can be used as light source; it uses conductive solid electrolyte applied to degrade pollute with gas and liquid and to separate metal ions.

An exposure apparatus (EA2) that uses X-ray radiation in a photolithographic process and can obtain various measurements regarding the X-ray radiation used, by obtaining and analyzing readings of the photoelectric effect on various reflective surfaces (5, 60a, 60b, 7, 7a, 9a, 9b, 9c and 9d) or optical elements (50a and 51). With the measurements of the X-ray radiation, the exposure apparatus can control the exposure dose during the mask (8) and wafer (10) illumination process. The exposure system also has the ability to detect deformation in the mirrors (9a, 9b, 9c and 9d) of the projection optical system caused by heat generated by absorption of the X-ray radiation. This is accomplished by analyzing the photoelectric effect occurring on the mirror surfaces and correcting the deformation of the mirrors based on this analysis.

The present invention provides a digital imaging photodetector with a gas electron multiplier. The digital imaging photodetector comprises a gas electron multiplier detector. The gas electron multiplier detector includes a photoelectric converter for converting incident light into photoelectrons or Compton electrons; a gas electron multiplier (GEM) for receiving the photoelectrons or Compton electrons from the photoelectric converter and multiplying them; and a readout unit for receiving an electrical signal indicating a position where an electron cloud multiplied in the gas electron multiplier arrives on an anode, recognizing coordinates of the electron cloud based on the received signal, and outputting the coordinates of the electron cloud. According to the digital imaging photodetector of the present invention, real-time imaging of image information can be achieved by multiplying photoelectrons or Compton electrons, which are discharged due to a photoelectric effect or a Compton effect induced by visible rays, ultraviolet rays or X-rays, using the gas electron multiplier.

The invention provides a locomotive pantograph-catenary hard point photoelectric vibration comprehensive detection and GPS positioning method. The method includes steps: conversion from arc light to electric signals, analysis and processing of the electric signals, analysis of vibration signals, obtaining of a hard point value via calculation, and GPS accurate positioning. A locomotive pantograph-catenary hard point photoelectric vibration comprehensive detection and GPS positioning system mainly comprises a photoelectric sensor, an acceleration sensor, a signal conditioning device, an isolation transformer, an acquisition card, a control computer, a display, a memory, and a GPS positioner. According to the method and the system, acceleration detection of the hard point and photoelectric detection of the hard point are effectively combined, more accurate discrimination of the hard point can be made via double discrimination, accurate positioning of the hard point of a contact system is realized by employing an advanced GPS positioning module, the search and maintenance of faults are simple, and failure to adapt to the development requirement of high-speed rails and false and missed judgments can be avoided.

The invention belongs to the field of photoelectric technology, and specifically relates to a photoelectric material adjustable absorption enhancing layer based on graphene surface plasmon. Graphene forming the enhancing layer is a thin film formed by single-layer graphene and having micro-nano scale structural features, graphene is doped to a certain concentration, and the Fermi level Ef of the graphene is larger than 0.1eV or smaller than -0.1eV, so that the graphene becomes a surface plasmon material; and the micro-nano structure is used for realizing wave-vector matching between incident light and a graphene surface plasmon mode, and under irradiation of the incident light, the doped graphene micro-nano structure generates surface plasmon, thereby realizing a local area of focusing. The absorption enhancing layer is applied to the upper side of photoelectric material used by photoelectric devices such as a solar cell and a photoelectric detector, can improve the absorption efficiency of the photoelectric material, and can realize active regulation and control of absorption characteristics of the photoelectric material, thereby expanding application of the photoelectric material in fields of spectrum-adjustable selective detection and the like.

The invention discloses a compression spectral imaging system based on random wavefront phase modulation, comprising at least a front imaging objective, a random wavefront phase modulator, a photoelectric detector and a computer, wherein the front imaging objective images the object surface on a first imaging surface; the random wavefront phase modulator and photoelectric detector are arranged in the back of the first imaging surface; the output end of the photoelectric detector is connected with the input end of the computer. The compression spectral imaging system performs three-dimensional compression acquisition on the spectral image data according to the compressive sensing principle, so that the system drastically reduces the data acquisition quantity. The system can work in single multi-point measurement mode, multiple multi-point measurement mode or multiple single-point measurement mode; the arrangement shape can be selected randomly as the detection units does not need to be arranged tightly on the detection surface.

The invention provides an electron blocking layer structure of a photoelectric device. The electron blocking layer structure is characterized in that structure matching between a quantum well and a P layer is achieved through adjusting a lattice structure and a band gap as much as possible; meanwhile, the formation of a polarized electric field is reduced, the formation of a negative charge area in an electron blocking layer is weakened as much as possible, and further the efficiency is improved; the electron leakage caused by energy band bending of the electron blocking layer and the increment of hole potential energy of the P layer are weakened. The electron blocking layer structure of the photoelectric device adopts AlInGaN or AlInGaN/InGaN super-lattice structure growth, wherein the In component is less than or equal to 10 percent; the Al component is less than or equal to 40 percent; the gradual distribution of the In component and the Al component exists in the electron blocking layer, and gradual change principles of the In component and the Al component are mutually independent; as for the electron blocking layer with an AlInGaN/InGaN super-lattice structure, the gradual change of the In component occurs in a super-lattice AlInGaN or a super-lattice AlInGaN/InGaN or in both the super-lattice AlInGaN and the super-lattice AlInGaN/InGaN.

The invention provides a TFT (thin film transistor) array substrate, and a production method thereof and a display device. The TFT array substrate mainly comprises a substrate, a common electrode wire, a grid wire, an insulation buffering layer, an active layer, a grid electrode insulation layer, a grid lead, a source electrode, a grid electrode and a data wire wherein the common electrode wire and the grid wire are formed on the substrate and extend along a first direction; the insulation buffering layer is formed on the common electrode wire and the grid wire; the active layer is formed on the insulation buffering layer; and the grid electrode insulation layer is formed on the active layer, and the grid lead, the source electrode, the grid electrode and the data wire are formed on the grid electrode insulation layer. Since the common electrode wire is made of a nontransparent metal, and a ditch area is arranged right above the common electrode wire, the high-bright backlight can be efficiently shielded by the common electrode wire, so that the photovoltaic effect which is produced under the influence of the high-bright backlight in the ditch area can be avoided. Therefore, according to the scheme provided by the invention, alight shielding layer is not required to be specially arranged, so that one procedure is omitted, the metal material is reduced, and the productivity of the TFT array substrate can be effectively improved.

The invention discloses a preparation method of a multiple quantum well structure for a photoelectric device. The multiple quantum well structure comprises n quantum well structures which are overlapped in sequence, and each quantum well structure is formed by sequential growth of potential well layers and potential barriers, wherein the growth of each potential well layer comprises the following steps: 1, first growing an NixGa1-xN potential well layer, wherein x is more than 0.1 and less than 0.45; 2, growing a GaN insert layer; and 3, growing the InxGa1-xN potential well layer, wherein x is more than 0.1 and less than 0.45. When the potential well layer grows, one or more than two of GaN insert layers with energy band width different from that of the InxGa1-xN potential well layer and an In treatment layer grow alternately. On the one hand, the In treatment layer can stabilize the structure of the InxGa1-xN, ensures the stability of quantum well components, and controls the stability and consistency of wavelength; on the other hand, the GaN insert layer disturbs the energy band structure of a quantum well region to improve the composite rate of electron hole pairs, so that the internal quantum efficiency of device illumination is improved, and as the brightness is improved, the life test performance of the device can be improved.

The invention discloses a laser bonding method for packaging of a photoelectric device, which comprises the following steps of: accurately positioning and fixing elements to be welded; applying an initial clamping force to the elements to be welded to tightly bond the elements to be welded with glass sealing materials; and in the bonding process, moving and heating the glass materials by using double beam laser obtained by light splitting method, preheating the glass sealing materials by the previous laser, melting the glass sealing materials by the next laser, forming a sealing body on a glass substrate plane, and providing airtight sealing. The laser bonding method provided by the invention remarkably reduces a residual stress distribution state of the cooled glass and has an outstanding effect for improving the packaging quality and prolonging the service life of the photoelectric device. Some examples of such glass packaging body are an organic light-emitting diode (OLED) display and other optical devices. The OLED device is taken as an example for presentation in the laser bonding method.