18 results about "Silicon detector" patented technology

The invention discloses a monitoring system and method for the cross state of in-loop reaction beam targets, and relates to the technical field of particle physical experiments. The system comprises a signal source module which is used for taking delta electrons generated by collision of a medium-high energy ion beam and a gas inner target as a signal source for monitoring a beam-target crossing state; the detection equipment module is used for adopting a customized ultrahigh vacuum compatible silicon detector as delta electron detection equipment; and the monitoring module is used for tracking the delta electronic normalization counting rate and monitoring the cross state of the reaction beam target in the ring in real time. The technical scheme has universality, real-time performance, safety and accuracy, and adapts to various beam target combinations.

The application discloses a thin film thickness measuring device and method based on a pixel array type silicon detector, and relates to the technical field of thin film thickness detection.The thin film thickness measuring device based on the pixel array type silicon detector comprises an X-ray generator, a thin film fixing module, a pixel array type silicon detector, readout electronics and an upper computer.The thin film fixing module is used for fixing a to-be-detected thin film.The X-ray generator is used for generating X-rays.The X-rays pass through the to-be-detected thin film and irradiate on the pixel array type silicon detector.The pixel array type silicon detector is used for converting the X-rays into electric signals.The readout electronics is used for conditioning the electric signals to obtain conditioned signals.The upper computer is used for determining a corresponding X-ray energy spectrum according to the conditioned signals, and determining the thickness distribution of each thin film in the to-be-detected thin film according to the X-ray energy spectrum.The application can realize high-precision measurement of the thin film thickness in a simple and fast manner.

The invention discloses a three-dimensional silicon detector airtight packaging structure integrating thermoelectric refrigeration and efficient heat dissipation, and relates to the technical field of detectors, and the three-dimensional silicon detector airtight packaging structure comprises a TO tube cap, an X-ray incidence window, a first limiting ring, a second limiting ring, a TO tube seat, a detector chip and an interconnection lead, and a refrigerating mechanism for refrigerating is arranged at the top end of the vapor chamber. Through phase change circulation of a liquid working medium on the vapor chamber and pressure driving of the vapor chamber, rapid and uniform distribution and efficient diffusion of heat are achieved, formation of local hot spots is effectively eliminated, the integrated capillary structure and the multi-cavity design of the vapor chamber exert excellent heat conduction performance in a limited space, the thermal resistance of the system is remarkably reduced, the dynamic response capability is improved, and the service life of the vapor chamber is prolonged. Therefore, the stability of the working temperature of the thermoelectric refrigeration element is guaranteed, and the heat dissipation reliability and the overall performance of the detector in long-term operation are enhanced.

A stacked focal planar array (FPA) device and method of fabrication. The method can include forming photodetectors or FPAs by heteroepitaxial growth of III-V PINs, APDs, or other photodetector devices that are bonded to a Si-based read-out integrated circuit (ROIC) wafer in a stacked configuration. In a single-color device example, a wavelength configuring buffer layer and photodetector are grown on a first substrate using compound semiconductor materials to enable infrared detection at desired wavelength(s). Depending on the application, this growth can be done on a graded compliant buffer layer and / or a selectively transparent buffer layer. And, silicon detectors can be incorporated to detect visible and NIR wavelengths in a dual-color device example. Further, the resulting devices can be bonded overlying the ROIC device in a flipped orientation and configured as pixels in a sensor array device coupled to the ROIC device.

The application provides a preparation method of a flat femtosecond laser oversaturated doping device, a method and a detector, and belongs to the technical field of photoelectricity, comprising a femtosecond laser, an electro-optic shutter, a second half-wave plate, a second Gartai Taylor prism, a focusing lens and a closed processing cavity arranged in sequence, sulfur film is plated on the surface of silicon as a dopant by using a thermal evaporation method, and the number of processing pulses is accurately controlled by using the electro-optic shutter, so that arbitrary pulse number processing is realized, and uncontrollable random influences caused by surface energy localization and hatching effect are inhibited. The surface of the flat oversaturated doping silicon material prepared by the application is compatible with modern semiconductor industrial technology, is beneficial to the development of silicon-based series photoelectric devices and promotes the development of CCD and CMOS focus plane devices. In addition, the light responsivity of the flat oversaturated doping silicon detector prepared by the application exceeds 1A / W in the 350-1200nm wave band, and ultraviolet enhancement and sub-bandgap infrared detection are simultaneously realized.

The present application relates to a kind of space particle detector based on silicon detector module and its detection method, comprising: silicon detector module, main amplifier, ADC collector and FPGA processor;Wherein, the silicon detector module includes: a piece of silicon semiconductor detector and ASIC device mounted on the same printed board;The ASIC device includes: charge preamplification module, fast shaping circuit and slow shaping circuit.The detection device of the present application adopts silicon detector module, and integrates silicon semiconductor detector and ASIC device, with charge signal amplification, fast / slow voltage pulse signal shaping function;It can also measure the energy spectrum and flux of charged particles;And, through ASIC module and differential amplifier circuit, the consistency of voltage signal input / output linearity is improved;When used for space charged particle measurement, through the high integration and shielding structure design of silicon detector module, the low noise, high integration requirement of space particle detector is reached, and the signal-to-noise ratio is improved.

The preparation method comprises the following steps: taking silicon as a substrate layer, growing Si3N4 passivation layers on the upper surface and the lower surface of the silicon substrate by adopting a chemical vapor deposition technology, spin-coating a negative photoresist layer on the Si3N4 passivation layer on one surface by utilizing a spin coater, exposing and developing the negative photoresist layer, and repeating the steps on the other surface, thereby obtaining the radiation-resistant ultrafast response silicon detector. Hole patterns formed after photoetching of the front face and the back face are mutually nested, photoresist is washed away through photoresist removing liquid after the exposed part of the Si3N4 passivation layer is removed, then the silicon substrate is soaked in etching liquid to be subjected to constant-temperature and ultrasonic treatment, the silicon substrate is etched to form a three-dimensional hole structure, the residual Si3N4 passivation layer on the surface is removed, and the three-dimensional hole structure is obtained. And finally depositing metal electrodes on the front and back surfaces of the sample respectively. According to the three-dimensional rhombic hole structure provided by the invention, the radiation resistance and ultrafast response capability of the silicon detector can be effectively improved, the selective wet etching quality is high, and the etching cost is low.

The invention relates to a silicon SPAD detector of an integrated waveguide and a manufacturing method of the silicon SPAD detector, and belongs to the field of photoelectric detector chips. The device sequentially comprises a second dielectric layer, a lower electrode, a first dielectric layer, an n + contact region, an avalanche region, a p-absorption region, a p + contact region, a third dielectric layer, a fourth dielectric layer, an upper electrode and a waveguide from bottom to top, wherein the upper electrode and the waveguide are located above the fourth dielectric layer. The lower electrode is connected with the n + contact region through the contact hole of the first dielectric layer; the waveguide is arranged above the fourth dielectric layer and extends to an area corresponding to the third dielectric layer, and the refractive index of the waveguide is larger than that of the third dielectric layer and that of the fourth dielectric layer; and the upper electrode is connected with the p + contact region through the contact hole of the fourth dielectric layer. According to the invention, through integration of the silicon SPAD detector and the waveguide, the coupling loss generated by connecting the photonic integrated chip and the silicon SPAD through the optical fiber is reduced, and the detection efficiency of the device is improved.

This invention relates to the field of silicon detector technology, specifically disclosing a silicon drift detector and a simplified pressurization method for a silicon drift detector array. The silicon drift detector includes: a substrate, a hexagonal anode, a floating cathode concentric ring, and a switching resistor chain. The bottom layer of the substrate is entirely cathode and covered with a first electrode contact layer. The hexagonal anode is located at the center of the top layer of the substrate and covered with a second electrode contact layer. Multiple concentric rings of the floating cathode are arranged around the hexagonal anode. A third electrode contact layer covers the inner end of the switching resistor chain and connects to the innermost concentric ring of the floating cathode. A fourth electrode contact layer covers the outer end of the switching resistor chain and connects to the outermost concentric ring of the floating cathode. This invention can improve the performance of silicon drift detectors and simplify the pressurization method for large-area silicon drift detector arrays.

The utility model discloses a refrigeration structure and a packaging structure of a two-dimensional array type silicon detector. The refrigeration structure comprises a silicon-based bottom plate, a silicon-based splitter plate, a cover plate and two water receiving pipes. A first layer of micro-channel is formed between the silicon-based bottom plate and the silicon-based splitter plate through a silicon-silicon bonding process; the silicon-based splitter plate and the cover plate form a second-layer micro-channel through anodic bonding, and the second-layer micro-channel is used for distributing the inflow cooling medium and receiving the backflow cooling medium for each channel in the first-layer micro-channel; the two water receiving pipes are connected with the cooling medium input port and the cooling medium output port in the cover plate respectively and used for providing circulating cooling media for the micro-channel radiator. The refrigeration structure aims to reduce detection dead zones among the modules in the detector and realize efficient and uniform refrigeration of the detector modules.

The invention discloses a single-energy neutron fluence rate absolute measurement device based on a 6LiF telescope system, and belongs to the technical field of neutron detection, the single-energy neutron fluence rate absolute measurement device comprises a cylinder, a collimation diaphragm is arranged in the cylinder, the collimation diaphragm comprises a first center hole and a second center hole, the first center hole and the second center hole are coaxially arranged and have the same diameter, and the first center hole is communicated with the second center hole. A first center hole is formed in one end of the cylinder, a composite layered neutron conversion body is mounted at the first center hole and comprises an aluminum substrate, a 6LiF active layer is evaporated on the upper surface of the aluminum substrate, a passivation ion implantation planar silicon detector is arranged behind a second center hole and is provided with an SMA connector, and a rear cover is arranged at the other end of the cylinder. The center of the rear cover is provided with a BNC female base leading-out signal line. Based on the structural design of the invention, the absolute measurement of the single-energy neutron fluence rate in the energy region from 1 keV to 100 keV can be realized. The method can be used for establishing the reference research of the single-energy neutron fluence rate in the energy region from 1 keV to 100 keV, and the traceability and accuracy of the measurement result of the single-energy neutron fluence rate are ensured.

The invention relates to the technical field of silicon detectors, and particularly discloses a silicon drift detector and a silicon drift detector array with a simplified pressurization mode, and the silicon drift detector comprises a substrate, a hexagonal anode, a floating cathode concentric ring, and a break-through resistor chain. The whole surface of the bottom layer of the substrate is a cathode and is covered with a first electrode contact layer; the hexagonal anode is positioned in the center of the top layer of the substrate and is covered with a second electrode contact layer; a plurality of circles of floating cathode concentric rings are arranged around the hexagonal anode; a third electrode contact layer covers the inner end of the break-through resistance chain and is connected with the innermost floating cathode concentric ring; and a fourth electrode contact layer covers the outer end of the break-through resistance chain and is connected with the outermost floating cathode concentric ring. According to the invention, the performance of the silicon drift detector can be improved, and the pressurization mode of the large-area silicon drift detector array can be simplified.

The invention discloses a preparation method of a three-dimensional silicon detector, and relates to the field of detectors, and the preparation method comprises the steps: carrying out the pretreatment of a wafer, so as to enable the wafer to meet the electrode etching requirements; the p-type electrode is etched in stages, each stage comprises a plurality of cyclic etching processes, the cyclic etching parameters of the same stage are the same, and the etching parameters of different stages are gradually changed according to the etching depth; performing thermal diffusion doping on a solid-state source sheet, filling polycrystalline silicon into the hole or the groove of the p-type electrode, and performing high-temperature thermal diffusion doping by using a solid-state diffusion source to realize doping of the hole or the groove; post-processing to form a complete p-type electrode structure; repeating the steps S2-S4 to etch the n-type electrode in stages, and performing thermal diffusion doping and post-processing on the solid-state source sheet to form a complete n-type electrode structure; metal connection of an n-type electrode and wafer surface passivation are carried out; and performing etching windowing and back metal deposition on the back of the wafer so as to realize metal connection of the p-type electrode. According to the invention, high-precision, high-reliability and environment-friendly preparation of the highly doped electrode can be realized.

This invention discloses a method based on 6 The monoenergetic neutron fluence absolute measurement device for the LiF telescope system, belonging to the field of neutron detection technology, includes a cylindrical body. A collimating aperture is installed inside the cylinder, comprising a first central aperture and a second central aperture. The first and second central apertures are coaxially aligned and have the same diameter. A composite layered neutron converter is installed at the first central aperture. The composite layered neutron converter includes an aluminum substrate, and the upper surface of the aluminum substrate is coated with a... 6 A passivated ion-implanted planar silicon detector is positioned behind the second central hole of the LiF active layer. This detector is equipped with an SMA connector. A rear cover is located at the other end of the casing, with a BNC female connector at its center leading out signal lines. Based on this structural design, absolute measurement of monoenergetic neutron fluence in the energy range of 1 keV to 100 keV can be achieved. This contributes to establishing a benchmark study of monoenergetic neutron fluence in the 1 keV to 100 keV energy range, ensuring the traceability and accuracy of monoenergetic neutron fluence measurement results.

This invention discloses a moving target localization method based on single-pixel imaging in complex backgrounds, comprising: a rapidly moving target entering the scene against a complex grayscale background; playing several binarized Fourier substrate patterns using a digital micromirror device; the light field of the target being rapidly modulated and received by a single-point silicon detector, then converted from analog to digital by a high-speed acquisition card and stored in a computer; then using the Fourier slicing theorem to convert some Fourier coefficients into a one-dimensional line integral signal projected along the x and y axes; comparing the difference between the one-dimensional line integral signals with and without the target in the time dimension; and using a threshold division method to determine the coordinates of the target center. This invention addresses the problem that the imaging frame rate in the single-pixel domain cannot meet the high resolution and real-time requirements of object tracking, effectively broadening the application scope of image-free tracking methods and promoting the application of single-pixel imaging in fields such as moving target detection.

The present application relates to a kind of energy spectrum diagram flux measurement method and dead time correction method, it solves the technical problems that when particle flux is too large, capacitor array in ASIC chip is saturated, resulting in obtaining inaccurate energy spectrum flux and the dead time of ASIC chip is too long in the process of measuring signal of existing silicon detector, it will the trigger signal of ASIC chip be separately led out and be counted in the way of timer, judge total signal quantity, can obtain complete energy spectrum in combination with the data in SCA.

The application provides a slow start high-voltage circuit suitable for silicon detectors with various sensitive layer thicknesses, in a high-frequency oscillation circuit, when a transistor is turned on, an induced electromotive force is generated in a primary coil of a transformer, when the transistor is saturated, the induced electromotive force generated in the primary coil of the transformer prevents the decrease of current, thereby a circulating oscillation signal is formed, after the power supply is powered on, the voltage can be adjusted through the adjustment of an RC circuit; a voltage doubling rectifier circuit doubles the oscillation signal; the slow start circuit adjusts the time length of slow start through an RC time constant circuit, the time length of power supply to the silicon detector is delayed after the RC time constant circuit is powered on through a field effect transistor, the impact current when the power supply is powered on is reduced through the slow start circuit, the output current is extremely small, is a microampere level current, the detector can work in a full depletion state, and is suitable for systems with high power consumption requirements.

The invention provides a silicon detector and a manufacturing method thereof. The silicon detector comprises a silicon substrate, an active region arranged on the front surface of the silicon substrate and a phosphorus-doped layer arranged on the back surface of the silicon substrate. The manufacturing method comprises the steps of providing a silicon substrate and forming an active region on the front surface of the silicon substrate; thinning the back surface of the silicon substrate; injecting phosphorus ions into the thinned back surface to form a phosphorus-doped layer; and annealing the silicon substrate to activate the phosphorus doped layer. The implantation energy of the phosphorus ions is 8-15 KeV, the implantation dose is 5 * 10 < 12 >-5 * 10 < 13 > ions / cm < 2 >, and the annealing mode is laser annealing. According to the method, traditional arsenic ion implantation is replaced with phosphorus ion implantation, and the problems that in the prior art, due to dependence on specific heavy ion implantation equipment, the technology is complex, the production period is long, and the productivity is limited are solved. The method can simplify the process, improve the production efficiency and reduce the manufacturing cost while ensuring and even optimizing the performances of light response, electric leakage and the like.