99 results about "Silicon detector" patented technology

The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.

A thermal sensor for low level radiation with built-in photo-thermal gain utilizing a thin film of pyro-optical material to modulate the reflectivity and/or transmission of a photonic carrier beam. The photonic carrier beam is modulated by the temperature of the pyro-optical film and detected by typically a silicon detector. A slight temperature increase of the pyro-optical film due to absorption of low level radiation increases the coefficient of absorption of the photonic carrier beam which in turn causes a further increase in temperature of the pyro-optical film. The photonic carrier beam provides power to increase the temperature of the pyro-optical film beyond the heating caused by the absorption of low level radiation alone. This thermal amplification effect provides a radiation sensor with photo-thermal gain.

An integrated application specific integrated circuit having a detection layer, a time delayed integration capability, data acquisition electronics, and a readout function is provided for detecting breast cancer in women. The detection layer receives x-ray radiation and converts the received energy to electron pairs, one of which is received by pixels. The time delay integration is on the chip and a part of the readout architecture. The detector may be a hybrid silicon detector (SiPD), a CdZnTe detector, or a GaAs detector.

The invention relates to a silicon detector structure with a wide spectral response range, which comprises an n-type silicon substrate, a silicon dioxide medium masking layer, a p-type doping layer, a front surface contact electrode, an antireflection film layer, a broad-spectrum absorbing black silicon layer, a medium passivating layer and a back surface contact electrode, wherein a circular groove is arranged on the surface of the n-type silicon substrate; the silicon dioxide medium masking layer is formed around the circular groove on the surface of the n-type silicon substrate, and the middle of the silicon dioxide medium masking layer is an annular structure; the p-type doping layer is arranged in the circular groove of the n-type silicon substrate; the front surface contact electrode is produced on the inner wall of the annular structure of the silicon dioxide medium masking layer and covers the partial edge of the surface of the annular structure to form an annular structure; the antireflection film layer is produced in the annular structure of the front surface contact electrode and covers the surface of the p-type doping layer; the broad-spectrum absorbing black silicon layer is produced on the back surface of the n-type silicon substrate; the medium passivating layer is point-type and is formed on the surface of the broad-spectrum absorbing black silicon layer; and the back surface contact electrode is produced on the surface of the broad-spectrum absorbing black silicon layer and covers the point-type medium passivating layer.

A method and apparatus for creating both segmented and unsegmented radiation detectors which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a second metal contact layer to complete the device structure. When the contacts to the device are segmented, the device is capable of position sensitive detection and spectroscopy of ionizing radiation, such as photons, electrons, and ions.

The invention discloses an open-and-close type three-dimensional trench electrode silicon detector. An open-and-close type groove electrode and a central electrode are formed after etching on the silicon through diffusion and doping, the open-and-close type groove electrode surrounds the central electrode, the central electrode is connected with the negative electrode, the open-and-close type groove electrode is connected with the positive electrode, and the open-and-close type groove electrode is an open and discontinuous cylindrical structure. The bottom of the detector has a silicon dioxide protective layer. The area of the dead zone is smallest, particles can enter from both sides during working, and reaction is more flexible. The problem that in the prior art, the three-dimensional silicon detector can only be single-sided etched, the particles can only be incident on one side, and there is a dead zone, so that the detection performance of the detector is affected.

A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1×10¹⁴ cm⁻², and locally exceeding 10²² per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices.

A high pixel density intraoral x-ray imaging sensor includes a direct conversion, fully depleted silicon detector bump bonded to a readout CMOS substrate by capillary bump bonds.

A solar-blind ultraviolet irradiation calibrating device relates to the field of ultraviolet irradiation calibration and solves the problems that existing solar-blind ultraviolet detection is narrow in dynamic range and low in accurate. The device comprises an L-shaped light track, an ultraviolet light source, an inlet diaphragm, a shielding cover, an integrating sphere, an outlet diaphragm, a silicon detector, a reference detector and a horizontal electric displacement bench, wherein the inlet diaphragm is used for controlling the radiation energy flux entering the integrating sphere, the shielding cover is used for shielding environmental stray light around the light source from entering the integrating sphere, the outlet diaphragm is tightly attached to an outlet of the integrating sphere and used for controlling the radiation energy flux of the outlet of the integrating sphere, the silicon detector is used for monitoring the irradiation change situation on the wall of the integrating sphere, the reference detector is used for measuring the irradiation at some position, and the horizontal electric displacement bench enables the reference detector and a detector to be detected to be arranged at the center of a light path in turns. The solar-blind ultraviolet irradiation calibrating device is simple in structure, strong in operability, high in accuracy and capable of achieving solar-blind ultraviolet detector irradiation calibration in a large dynamic range of 10-7 to 10-13W/cm<2>.

The invention discloses a method for preparing a silicon detector with high photoelectric response at the room temperature. The method is characterized by comprising the following steps of: preparing a heavily doped n-type silicon (Si) layer with an impurity deep energy level on a light receiving surface of an n-type Si substrate, preparing a transparent conductive film on the heavily doped n-type Si layer, and preparing an ohmic contact n electrode on the transparent conductive film serving as a first electrode; and preparing a Schottky electrode on a back surface or the light receiving surface of the n-type Si substrate serving as a second electrode, or forming a p-type Si region on the back surface or the light receiving surface of the n-type Si substrate, and preparing an ohmic contact p electrode on the p-type Si region serving as the second electrode. By using the method, the photoelectric response of the silicon detector can be greatly improved, namely the flexibility is improved and the detection range is expanded to an infrared light region.

The invention provides an aerosol continuous radiation monitoring device for a nuclear power plant. The device comprises a shielding body, a detecting component disposed inside the shielding body, a filtering component disposed inside the shielding body and under the detecting component, and a circuit board and an ARM processing board disposed at the detecting component, wherein the detecting component comprises a PIPS semiconductor detector and a plastic scintillator detector, the filtering component comprises a filter housing, and the filter housing is provided with an inlet chamber, an exhaust chamber, a roll cassette, a cam, a paper pressing mechanism and a paper feeding motor. The aerosol continuous radiation monitoring device provided by the invention utilizes a PIPS semiconductor detector (passivated injection surface silicon detector) to detect alpha and beta radiations in the aerosol, and detects the background gamma rays presented in the environment through a large plastic scintillator detector.

The present invention relates to a sensor device. More particularly, the invention relates to a CMOS-based micro-optical-electromechanical-sensor (MOEMS) device with silicon light emitting devices, silicon waveguides and silicon detectors being fabricated using current Complementary Metal Oxide Semiconductor (CMOS) technology or Silicon on Insulator (SOI) technology. According to the invention there is provided a sensor comprising: a Silicon-based light emitting structure; an integrated electro-optical mechanical interface structure that is capable to sense mechanical deflections; an integrated electronic driving and processing circuitry so as to detect physical parameters such as vibration, motion, rotation, acceleration.

The invention provides a compensation correction method of a flat panel detector image lag. The compensation correction method comprises the following steps of generating a lag data sheet and storingthe data sheet in a flat panel detector or detector software; obtaining a current bright field image and a dark filed image; enabling a lag signal of each pixel in the dark field image to be corresponding to the lag data sheet, and finding out a lag value of the lag signal of each pixel corresponding to the lag data sheet, and a moment corresponding to the lag value; enabling the moment corresponding to the lag value to be added with the time interval of the collection time between the current bright field image and the dark field image to obtain a new moment, finding a lag value correspondingto the new moment from the lag data sheet, and generating a current image evaluation lag template matrix; and enabling the lag template matrix to be subtracted from the current bright field image toperform lag compensation correction. The compensation correction method of the flat panel detector image lag disclosed in the invention can be used for solving the complex lag problems, and is wide inapplicable range, and suitable for a noncrystalline silicon detector and amorphous selenium, CMOS and other semiconductor detectors.

This invention discloses the several means by which transient noise due to capacitance related displacement current can be excluded from the optical signal coming from a silicon detector used in opto-couplers. The exclusion of such noise permits a high degree of detector sensitivity which permits the use of low efficiency silicon based LEDs for opto-coupler applications.

The invention relates to an active neutron personal dosimeter based on three silicon detectors, and a measurement method of the active neutron personal dosimeter. The personal dosimeter comprises a main detector, an outer transformant module, and a nuclear electronics system. The main detector and the outer transformant module comprise three passivation injection planar silicon detectors which aresequentially an Open detector, a Fast detector and an Albedo detector from the top to the bottom. A polyethylene layer and a 6LiF coating layer are disposed in front of the Open detector, a polyethylene layer is arranged in front of the Fast detector, and a boron-containing polyethylene layer, a polyethylene layer and a 6LiF coating layer are arranged in front of the Albedo detector. The nuclearelectronics system provides high voltages for all detectors, and obtains detection signals for multichannel analysis. The personal dosimeter provides two measurement modes. A direct reading mode can present the neutron fluence and personal dose equivalent information in real time, and a spectrum unfolding mode can give a more precise neutron field power spectrum. The personal dosimeter is wide inenergy measurement range, has the energy resolution capability, and can be used in an n-gamma mixed field.

The invention discloses an integrated biosensor and a preparation method thereof, wherein an incident waveguide is arranged on the input end of a body, the input end of a waver filter is positioned on the input end of the body, the output end of the wave filter is positioned on the output end of the body, a thermal tuning micro ring is arranged on the output end of the wave filter, the input end of a power splitter is positioned on the download end of the thermal tuning micro ring, a sensing micro ring is arranged on the other output end of the power splitter, a germanium-silicon detector is arranged on the output port of the download end of the sensing micro ring, a heating electrode is arranged on the thermal tuning micro ring, and the sensing micro ring is positioned in a sensing window. According to the present invention, the photodetector and the sensing passive device are monolithically integrated so as to easily perform the array sensing; the input light source is the broad spectrum light source, and the external optical power meter is not required, such that the loss and the complexity of the system are reduced; and the expensive tunable laser and the high-precision spectrometer are not required so as to substantially reduce the whole system cost.

The invention relates to an alpha, beta and gamma radioactive aerosol continuous sampling and measuring device which comprises a frame, a sampling chamber, a measuring chamber, a boosting motor, a tape conveying motor, a tape collection plate, a tape feeding plate, a filter paper tape, a passivated ion implantation plane silicon detector and a sodium iodide detector. The sampling chamber comprises an upper air chamber and a lower air chamber, and the upper air chamber and the lower air chamber are communicated with each other; the top of the upper air chamber is provided with an air inlet, and the bottom of the lower air chamber is provided with an air outlet; the measuring chamber comprises an upper measuring chamber and a lower measuring chamber, and the upper measuring chamber and the lower measuring chamber are communicated with each other; an output end of the boosting motor is connected with an eccentric shaft through a speed reducer, and the eccentric shaft is connected with both the upper air chamber and the upper measuring chamber through a connecting rod; the tape conveying motor is arranged on one side, close to the measuring chamber, of the frame; the tape collection plate is connected with the tape conveying motor through a speed reducer; the tape feeding plate is arranged on the other side of the frame; one end of the filter paper tape is wound on the tape feeding plate, and the other end of the filter paper tape sequentially penetrates between the upper air chamber and the lower air chamber and between the upper measuring chamber and the lower measuring chamber and then are wound on the tape collection plate; the passivated ion implantation plane silicon detector is arranged at the bottom of the upper measuring chamber; the sodium iodide detector is arranged in the lower measuring chamber.

The invention relates to a near-infrared polarization interferometer spectrometer. The near-infrared polarization interferometer spectrometer comprises a light source group, a collimation off-axis parabolic mirror, a first cold light mirror, a polarizing prism, a compensation crystal, a scanning optical wedge component, an analyzing prism, a second cold light mirror, a convergence off-axis parabolic mirror and a detector which are arranged in sequence in the light-path direction. The light source group comprises a halogen tungsten lamp which carries out direct coupling output through a single mode fiber and a He-Ne laser device for sending a calibration light source. The detector comprises a silicon detector and an InGaAs detector. The near-infrared polarization interferometer spectrometer is simple in structure.

The invention discloses a three-dimensional groove electrode silicon detector with variable center collecting electrodes. A peripheral electrode comprises a first linear portion, a second linear portion and a bent portion, wherein the first linear portion is parallel to the second linear portion, and the end of the first linear portion is hermetically connected with the end of the second linear portion through the bent portion. A long center electrode is positioned in the middle of the peripheral electrode and parallel to the first linear portion and the second linear portion, and the length of the first linear portion is as same as that of the second linear portion. Isolation silicon is arranged between the peripheral electrode and the long center electrode, a p type silicon substrate is arranged below the long center electrode, and the bottom of the p type silicon substrate is plated with a silicon dioxide protective layer. The three-dimensional groove electrode silicon detector is simple and reasonable in structure and strong in radiation resistance, and solves the problems that electric fields between a positive electrode and a negative electrode are non-uniform, a weak electric field area exists, the size of a single detector unit structure has a great influence on the radiation resistance, and consequently, the size is inconveniently adjusted in the prior art.

A manufacturing method of a silicon detector array device for enhancing the blue light efficiency belongs to the field of photoelectric technology. The problem on how to provide a manufacturing methodof a silicon detector array device with high blue light sensitivity, high gain and high integration is solved. The preparation method of the invention includes the following steps: depositing an avalanche layer on a cleaned substrate material; depositing a field control layer on the upper surface of the avalanche layer; depositing an absorption layer on the upper surface of the field control layer and preparing doping junctions by ion implantation; depositing a non-depletion layer on the upper surface of the absorption layer; preparing isolation regions; preparing anodes and anode electrode leads; preparing a transparent layer on the non-depletion layer or on the non-depletion layer and the anodes; thinning the substrate; and finally, preparing cathodes and cathode electrode leads, removing the hard substrate, and completing packaging to obtain an array device. The array device manufactured by the method has high blue light responsiveness and high quantum efficiency.