Three-dimensional groove electrode silicon detector with variable center collecting electrodes

A technology of collecting electrodes and trench electrodes, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of uneven electric field distribution, large impact on radiation resistance performance, inconvenient volume adjustment, etc., to solve uneven electric field distribution, Solve the effect of inconvenient adjustment and simple and reasonable structure

Active Publication Date: 2017-02-22
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In order to achieve the above purpose, the present invention provides a three-dimensional grooved electrode silicon detector with a variable central collecting electrode, which has a simple and reasonable structure and strong radiation resistance, and solves the problem o

Method used

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  • Three-dimensional groove electrode silicon detector with variable center collecting electrodes
  • Three-dimensional groove electrode silicon detector with variable center collecting electrodes
  • Three-dimensional groove electrode silicon detector with variable center collecting electrodes

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Embodiment 1

[0021] The structure of the present invention, such as Figure 2-3 As shown, the peripheral electrode 7 is composed of a first straight part 8, a second straight part 9 and a curved part 10, the first straight part 8 and the second straight part 9 are parallel, and the end of the first straight part 8 and the second straight part The ends of the two straight parts 9 are closed and connected by a curved part 10, and the curved part 10 is preferably semicircular; the long central electrode 6 is located in the middle of the peripheral electrode 7, and the long central electrode 6 is connected to the first straight part 8 and the second straight part. 9 in parallel, there is an isolated silicon body 3 between the peripheral electrode 7 and the long central electrode 6, and the p-type silicon substrate 4 is placed under the peripheral electrode 7 and the long central electrode 6, and the bottom of the p-type silicon substrate 4 is plated with a 1 μm-thick two-layer silicon substrate...

Embodiment 2

[0024] In the structure of the present invention, except that the thickness of the heavily doped borosilicate layer and the heavily doped phosphorus silicon layer is 500 μm, the thickness of the lightly doped borosilicate layer is 500 μm, and the thickness of the p-type silicon substrate 4 is 20 μm, the remaining parts are the same as those in the embodiment. 1 is the same.

Embodiment 3

[0026] In the structure of the present invention, except that the thickness of the heavily doped borosilicate layer and the heavily doped phosphorus silicon layer is 270 μm, the thickness of the lightly doped borosilicate layer is 270 μm, and the thickness of the p-type silicon substrate 4 is 30 μm, the remaining parts are the same as those in the embodiment. 1 is the same.

[0027] Considering that the positive electrode is located in the center of the traditional three-dimensional trench electrode silicon detector, its breakdown voltage is significantly reduced, while the long center electrode 6 of the present invention makes the position of the positive and negative electrodes different, and the impact on the breakdown voltage is relatively reduced, and the long The central electrode 6 changes with the change of the peripheral electrode 7, that is, M p with M n match (M n -M p =2y), where M p Indicates the length of the long center electrode 6, M nIndicates the length ...

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Abstract

The invention discloses a three-dimensional groove electrode silicon detector with variable center collecting electrodes. A peripheral electrode comprises a first linear portion, a second linear portion and a bent portion, wherein the first linear portion is parallel to the second linear portion, and the end of the first linear portion is hermetically connected with the end of the second linear portion through the bent portion. A long center electrode is positioned in the middle of the peripheral electrode and parallel to the first linear portion and the second linear portion, and the length of the first linear portion is as same as that of the second linear portion. Isolation silicon is arranged between the peripheral electrode and the long center electrode, a p type silicon substrate is arranged below the long center electrode, and the bottom of the p type silicon substrate is plated with a silicon dioxide protective layer. The three-dimensional groove electrode silicon detector is simple and reasonable in structure and strong in radiation resistance, and solves the problems that electric fields between a positive electrode and a negative electrode are non-uniform, a weak electric field area exists, the size of a single detector unit structure has a great influence on the radiation resistance, and consequently, the size is inconveniently adjusted in the prior art.

Description

technical field [0001] The invention belongs to the technical field of high-energy physics and astrophysics, and relates to a three-dimensional groove electrode silicon detector with a variable central collecting electrode. Background technique [0002] Detectors are widely used in high-energy physics, astrophysics, aerospace, military, medical and other technical fields. In high-energy physics and astrophysics, the detector is under strong irradiation conditions, so there are strict requirements on the detector itself. It has a strong ability to resist radiation, and the leakage current and full depletion voltage cannot be too large, and there are different requirements for its size. The traditional "three-dimensional trench electrode silicon detector" has many shortcomings: first, the electric field distribution between its positive and negative electrodes is not uniform, and the electric field lines are mostly curves, not the shortest straight line, and electrons in the e...

Claims

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Application Information

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IPC IPC(8): H01L31/0224
CPCH01L31/022408H01L31/022416
Inventor 李正廖川唐立鹏张亚
Owner XIANGTAN UNIV
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