Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Three-dimensional Trench Electrode Silicon Detector with Variable Central Collecting Electrode

A collection electrode and center electrode technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of large impact on radiation resistance, inconvenient adjustment of volume, uneven electric field distribution, etc. Adjusting inconvenient and practically enhanced effects

Active Publication Date: 2018-04-13
XIANGTAN UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to achieve the above purpose, the present invention provides a three-dimensional grooved electrode silicon detector with a variable central collecting electrode, which has a simple and reasonable structure and strong radiation resistance, and solves the problem of uneven electric field distribution between the positive and negative electrodes in the prior art. In the weak electric field area, the size of a single detector unit structure has a great influence on the anti-radiation performance, making it inconvenient to adjust the volume

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional Trench Electrode Silicon Detector with Variable Central Collecting Electrode
  • Three-dimensional Trench Electrode Silicon Detector with Variable Central Collecting Electrode
  • Three-dimensional Trench Electrode Silicon Detector with Variable Central Collecting Electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The structure of the present invention, such as Figure 2-3 As shown, the peripheral electrode 7 is composed of a first straight part 8, a second straight part 9 and a curved part 10, the first straight part 8 and the second straight part 9 are parallel, and the end of the first straight part 8 and the second straight part The ends of the two straight parts 9 are closed and connected by a curved part 10, and the curved part 10 is preferably semicircular; the long central electrode 6 is located in the middle of the peripheral electrode 7, and the long central electrode 6 is connected to the first straight part 8 and the second straight part. 9 in parallel, there is an isolated silicon body 3 between the peripheral electrode 7 and the long central electrode 6, and the p-type silicon substrate 4 is placed under the peripheral electrode 7 and the long central electrode 6, and the bottom of the p-type silicon substrate 4 is plated with a 1 μm-thick two-layer silicon substrate...

Embodiment 2

[0024] In the structure of the present invention, except that the thickness of the heavily doped borosilicate layer and the heavily doped phosphorus silicon layer is 500 μm, the thickness of the lightly doped borosilicate layer is 500 μm, and the thickness of the p-type silicon substrate 4 is 20 μm, the remaining parts are the same as those in the embodiment. 1 is the same.

Embodiment 3

[0026] In the structure of the present invention, except that the thickness of the heavily doped borosilicate layer and the heavily doped phosphorus silicon layer is 270 μm, the thickness of the lightly doped borosilicate layer is 270 μm, and the thickness of the p-type silicon substrate 4 is 30 μm, the remaining parts are the same as those in the embodiment. 1 is the same.

[0027] Considering that the positive electrode is located in the center of the traditional three-dimensional trench electrode silicon detector, its breakdown voltage is significantly reduced, while the long center electrode 6 of the present invention makes the position of the positive and negative electrodes different, and the impact on the breakdown voltage is relatively reduced, and the long The central electrode 6 changes with the change of the peripheral electrode 7, that is, M p with M n match (M n -M p =2y), where M p Indicates the length of the long center electrode 6, M nIndicates the length ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a three-dimensional groove electrode silicon detector with variable center collecting electrodes. A peripheral electrode comprises a first linear portion, a second linear portion and a bent portion, wherein the first linear portion is parallel to the second linear portion, and the end of the first linear portion is hermetically connected with the end of the second linear portion through the bent portion. A long center electrode is positioned in the middle of the peripheral electrode and parallel to the first linear portion and the second linear portion, and the length of the first linear portion is as same as that of the second linear portion. Isolation silicon is arranged between the peripheral electrode and the long center electrode, a p type silicon substrate is arranged below the long center electrode, and the bottom of the p type silicon substrate is plated with a silicon dioxide protective layer. The three-dimensional groove electrode silicon detector is simple and reasonable in structure and strong in radiation resistance, and solves the problems that electric fields between a positive electrode and a negative electrode are non-uniform, a weak electric field area exists, the size of a single detector unit structure has a great influence on the radiation resistance, and consequently, the size is inconveniently adjusted in the prior art.

Description

technical field [0001] The invention belongs to the technical field of high-energy physics and astrophysics, and relates to a three-dimensional groove electrode silicon detector with a variable central collecting electrode. Background technique [0002] Detectors are widely used in high-energy physics, astrophysics, aerospace, military, medical and other technical fields. In high-energy physics and astrophysics, the detector is under strong irradiation conditions, so there are strict requirements on the detector itself. It has a strong ability to resist radiation, and the leakage current and full depletion voltage cannot be too large, and there are different requirements for its size. The traditional "three-dimensional trench electrode silicon detector" has many shortcomings: first, the electric field distribution between its positive and negative electrodes is not uniform, and the electric field lines are mostly curves, not the shortest straight line, and electrons in the e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224
CPCH01L31/022408H01L31/022416
Inventor 李正廖川唐立鹏张亚
Owner XIANGTAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com