Nested 3D Trench Electrode Silicon Detector

Abstract

The invention discloses a nested three-dimensional trench electrode silicon detector which comprises a silicon dioxide protective layer with the thickness of 1 micron. A peripheral electrode is arranged on the silicon dioxide protective layer. The peripheral electrode is in a hollow cuboid structure from top to bottom. A nested portion and a center electrode are embedded in the peripheral electrode. The nested portion is composed of a p-type silicon substrate on the upper surface of the silicon dioxide layer, an n-type heavily doped phosphorus silicon layer and a p-type light doped borosilicate layer, wherein the n-type heavily doped phosphorus silicon layer and the p-type light doped borosilicate layer are located on the p-type silicon substrate. The bottom of the center electrode penetrates the nested portion and is connected with the silicon dioxide protective layer. An isolation silicon body is arranged between the peripheral electrode and the center electrode. The tops of the peripheral electrode, the center electrode and the isolation silicon body are located in the same plane, and an electrode contact layer is arranged on the tops of the three. The electrode contact layer iscomposed of an aluminum skin connected with the peripheral electrode and the center electrode and silicon dioxide connected with the isolation silicon body. Electrode contact ports are arranged on the aluminum skin, which is connected with the peripheral electrode and the center electrode, of the electrode contact layer. The practicality of the detector is greatly enhanced.

Description

technical field [0001] The invention belongs to the technical field of high-energy physics and astrophysics, and relates to a nested three-dimensional groove electrode silicon detector. Background technique [0002] Detectors are widely used in high-energy physics, astrophysics, aerospace, military, medical and other technical fields. In high-energy physics and astrophysics applications, the working environment of detectors is under strong irradiation conditions, so there are strict requirements for detectors , the specific requirements are reflected in the need for strong radiation resistance, moderate leakage current and full depletion voltage, and appropriate size. The traditional three-dimensional trench electrode silicon detector has many shortcomings: First, when the traditional three-dimensional trench electrode silicon detector electrode is etched, it cannot completely penetrate the entire silicon body, and a weak electric field appears in the unetched part , no ele...

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Problems solved by technology

[0004] In order to achieve the above object, the present invention provides a nested three-dimensional grooved electrode silicon detector, which solves the problem of the large dead zone, limited sensitivity and the adjustment of the size of the unit structure of the detector in the traditional three-dimensional grooved electrode silicon detector. Inconvenience, problems that limit its usefulness

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