7445 results about "SILICONE DIOXIDE" patented technology

A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, including steps of growing on the silicon substrate an interfacial layer of a silicon-containing dielectric material; and depositing on the interfacial layer a layer comprising at least one high-K dielectric material, in which the interfacial layer is grown by laser excitation of the silicon substrate in the presence of oxygen, nitrous oxide, nitric oxide, ammonia or a mixture of two or more thereof. In one embodiment, the silicon-containing material is silicon dioxide, silicon nitride, silicon oxynitride or a mixture thereof.

Methods for forming silicon dioxide thin films on hydrophobic surfaces are provided. For example, in some embodiments, silicon dioxide films are deposited on porous, low-k materials. The silicon dioxide films can be deposited using a catalyst and a silanol. In some embodiments, an undersaturated dose of one or more of the reactants can be used in forming a pore-sealing layer over a porous material.

The amount of atoms diffused into a substrate may be made uniform or the thickness of a thin film may be made uniform in a low species utilization process by stopping the flow of gas into a reaction chamber during the low species utilization process. Stopping the flow of gas into a reaction chamber may entail closing the gate valve (the valve to the vacuum pump), stabilizing the pressure within the reaction chamber, and maintaining the stabilized pressure while stopping the gas flowing into the chamber. Low species utilization processes include the diffusion of nitrogen into silicon dioxide gate dielectric layers by decoupled plasma nitridation (DPN), the deposition of a silicon dioxide film by rapid thermal processing (RTP) or chemical vapor deposition (CVD), and the deposition of silicon epitaxial layers by CVD.

The invention relates to an aerogel composite material, in particular to a glass fiber reinforced silicon dioxide aerogel composite material and a preparation method thereof. The excellent properties of aerogel are maintained, the mechanical properties of the aerogel are reinforced, and the glass fiber reinforced silicon dioxide aerogel composite material has good integrity and certain strength. The glass fiber reinforced silicon dioxide aerogel composite material is prepared by compounding glass fiber and silicon dioxide aerogel, wherein the glass fiber is a reinforcement, and the content ofthe glass fiber accounts for 1-15% total mass of a sample; the silicon dioxide aerogel is a matrix, tetraethoxysilane is a silicon source material, and methyltrimethoxysilane or methyltriethoxysilaneis used as a silicon source co-precursor. The preparation method comprises the following steps of: firstly, pretreating the glass fiber; then, preparing glass fiber reinforced silicon dioxide composite wet gel; and finally, aging, secondarily modifying and drying the silicon dioxide composite wet gel.

Disclosed are a method and apparatus for forming an insulating film on the surface of a semiconductor substrate capable of improving the quality and electrical properties of the insulating film with no employment of high-temperature heating and with good controllability. After the surface of a silicon substrate is cleaned, a silicon dioxide film having a thickness of 1-20 nm is formed on the substrate surface. The silicon substrate is exposed to plasma generated by electron impact, while the silicon substrate is maintained at a temperature of 0° C. to 700° C. Thus, nitrogen atoms are incorporated into the silicon dioxide film, obtaining a modified insulating film having good electrical properties.

The invention relates to a process for manufacturing compounds based on one or more silicates of alkali metals and / or of alkaline-earth metals, optionally in the form of mixed silicates that combine at least two of these elements, said process involving:(i) preferably a conversion reaction (1) in which halides of said alkali metals and / or of said rare earths and / or of said alkaline-earth metals are converted into the corresponding sulfates;(iii) a conversion reaction (2) in which said sulfates together with silica are converted into the corresponding silicates, the heat supply needed for this conversion being provided, at least in part, by a combustion reaction (3) using a submerged burner or a plurality of submerged burners.

A through silicon via structure and a method of fabricating the through silicon via. The method includes: (a) forming a trench in a silicon substrate, the trench open to a top surface of the substrate; (b) forming a silicon dioxide layer on sidewalls of the trench, the silicon dioxide layer not filling the trench; (c) filling remaining space in the trench with polysilicon; after (c), (d) fabricating at least a portion of a CMOS device in the substrate; (e) removing the polysilicon from the trench, the dielectric layer remaining on the sidewalls of the trench; (f) re-filling the trench with an electrically conductive core; and after (f), (g) forming one or more wiring layers over the top surface of the substrate, a wire of a wiring level of the one or more wiring levels closet to the substrate contacting a top surface of the conductive core.

Improved methods are disclosed for catalyst-assisted atomic layer deposition (ALD) to form a silicon dioxide layer having superior properties on a semiconductor substrate by using a first reactant component consisting of a silicon compound having at least two silicon atoms, or using a tertiary aliphatic amine as the catalyst component, or both in combination, together with related purging methods and sequencing.

The present invention relates to a novel printable etching medium having non-Newtonian flow behaviour for the etching of surfaces in the production of solar cells and to the use thereof. In particular, the invention relates to corresponding particle-containing compositions by means of which extremely fine structures can be etched very selectively without damaging or attacking adjacent areas.

An optical device (300) comprises a multilayer structure, formed by wafer bonding, incorporating in sequence a silicon dioxide layer (304), a buried silicide layer (306), a contact layer (308) and a silicon surface layer (310). The surface layer (310) is selectively etched to form an exposed rib (312). An upper surface of the rib (312) is doped to form an elongate electrode (314) therealong. The surface layer (310) is selectively etched to the contact layer (308) in regions remote from the rib (312) to form via channels (316a, 316b) for making electrical connection to the contact layer (308). The rib (312) forms a waveguide along which radiation propagates. When the electrode (314) is biased relative to the contact layer (308), charge carriers are injected into the rib (312) and induce refractive index changes in a central region (324) thereof where most of the radiation propagates along the rib (312). The silicide layer (306) provides an efficient current conduction path for injecting the carriers, thereby providing enhanced device operating bandwidth and reduced power dissipation.

The composite material comprise acid functionalized inorganic supports such as silica dispersed in a functionalized and / or non-functionalized polymer matrix that is based on numerous polymers such as poly(aromatic ether ketones), or poly(benzoyl phenylene), or derivatives thereof. The composite material is characterized by good water retention capabilities due to the acidic functions and the hydrophilicity of the silica particles. Moreover, a good impermeability to gas and liquid fuels commonly used in fuel cell technology, like hydrogen gas or methanol solution, is also obtained due to the presence of silica particles. Good mechanical properties of the composite material let the material to be formed easily in thin film or membrane form. In that form, the composite material is usable for proton exchange membrane for fuel cells, for drying or humidifying membrane for gas or solvent conditioning, or as acid catalytic membrane.

A coating composition forming a abrasion resistant coating comprising (A) an ultraviolet-curable silicone prepared by chemically modifying particulate colloidal silica with a specific silane compound, (B) a monomer mixture comprising a (meth)acrylate having a specific isocyanate skeleton and a urethane poly(meth)acrylate having an alicyclic skeleton, and (C) a photo-polymerization initiator. By using a urethane poly(meth)acrylate having an alicyclic skeleton as part of the component (B) and the component (A) having an enhanced reactivity of chemical modification, the compatibility of the component (A) with the component (B) is improved to give a cured coating with excellent wear resistance, weather resistance and durability.

A semiconductor device and a process for fabricating the device, the process including steps of depositing on the silicon substrate a layer comprising at least one high-K dielectric material, whereby a quantity of silicon dioxide is formed at an interface between the silicon substrate and the high-K dielectric material layer; depositing on the high-K dielectric material layer a layer of a metal; and diffusing the metal through the high-K dielectric material layer, whereby the metal reduces at least a portion of the silicon dioxide to silicon and the metal is oxidized to form a dielectric material having a K value greater than silicon dioxide. In another embodiment, the metal is implanted into the interfacial layer. A semiconductor device including such metal layer and implanted metal is also provided.

A silicon substrate comprises a silicon-on-insulator (SOI) portion which includes an insulating silicon dioxide layer beneath a device layer. SOI circuit structures, including SOI field effect transistors, are formed in the device layer. The substrate also comprises a bulk portion. Bulk semiconductor circuit structures are formed in wells in the bulk portion. The bulk circuit structures may be coupled to the SOI circuit structures.

The present invention belongs to the field of material preparing technology. By means of sol-gel technology, organic high molecule and silicon source are led into a surfactant self-assembling reaction system so as to prepare high ordered mesoporous high molecule / silica and carbon / silica composite material and ordered mesoporous carbon material through organic-organic competition, inorganic-inorganic competition, organic-inorganic competition, cross-linking polymerization coordinate assembling and solvent volatizing self assembling. The prepared mesoporous carbon material has high order property, great specific surface area, great caliber and great porosity, as well as excellent electrochemical properties as super capacitor and cell material. It has also wide application foreground in catalysis, adsorption, biomolecule separation, and other fields.

The invention discloses a transparent super-hydrophobic coating material. The raw materials of the transparent super-hydrophobic coating material comprise gas-phase silica nano-particle dispersion liquid which consists of gas-phase silica nano-particles and a solvent, and a hydrophobic treating agent. The invention further discloses a preparation method of a transparent super-hydrophobic coating; a coating of a micro-nano structure is prepared by rubbing and coating a substrate with the gas-phase silica nano-particle dispersion liquid, and then the coating is subjected to surface hydrophobization treatment by the hydrophobic treating agent to obtain the transparent super-hydrophobic coating. According to the super-hydrophobic coating material provided by the invention, hydrophobization treatment manners can be changed flexibly according to the difference of coated substrates; the method for preparing the super-hydrophobic coating has low requirement on equipment; the using cost is extremely low; the method is simple; the coating application is convenient; a large-area high-efficiency super-hydrophobic coating can be prepared; the prepared super-hydrophobic has excellent super-hydrophobicity, high transparency, droplet impact resistance, temperature and pH stability, durability, and repeated rubbing and coating capacity, and can be applied to almost all currently known solid surfaces.

A full fill trench structure comprising a microelectronic device substrate having a high aspect ratio trench therein and a full filled mass of silicon dioxide in the trench, wherein the silicon dioxide is of a substantially void-free character and has a substantially uniform density throughout its bulk mass. A corresponding method of manufacturing a semiconductor product is described, involving use of specific silicon precursor compositions for use in full filling a trench of a microelectronic device substrate, in which the silicon dioxide precursor composition is processed to conduct hydrolysis and condensation reactions for forming the substantially void-free and substantially uniform density silicon dioxide material in the trench. The fill process may be carried out with a precursor fill composition including silicon and germanium, to produce a microelectronic device structure including a GeO2 / SiO2 trench fill material. A suppressor component, e.g., methanol, may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

The invention relates to a preparation technology for concrete with super high performance, and belongs to the field of concrete technology in civil engineering. The invention is characterized in that: 1 m<3> of concrete contains 380 to 420 kg of cement, 680 to 740 kg of fine aggregate, 1120 to 1190 kg of coarse aggregate, 130 to 160 kg of water, 50 to 75 kg of fly ash, 25 to 64 kg of silica fume, 6.1 to 10.4 kg of a high performance water reducer, 0.05 to 0.25 kg of multi-walled carbon nanotubes and 15 to 25 kg of nanometer silica. The preparation technology is to carry out mechanical stirring for 180 to 240 seconds. The carbon nanotubes are added in the form of dispersion liquid, and a dispersant is cetyl trimethyl ammonium bromide (C16TAB), wherein the dispersion liquid is prepared according to the following portion MWNRs : C16TAB : water = 0.48 g : 4.1 g : 40 ml. The invention enables the super high performance concrete to have an enhanced mechanical property and lasting quality, a drastically increased service life, and capacity of being used in projects where requirements for the performance of concrete are high, for example, large-scale cross-sea bridges, super high buildings, and the like. The invention has a high utility value.

The invention relates to a preparation method of a hydrophobic silica aerogel heat-insulation composite material. The method comprises steps as follows: (1) preparation of silica sol: siloxane is used as a precursor, an organic solvent, water and an acid catalyst are added, and the silica sol is obtained; (2) preparation of composite gel: a flame retardant and an infrared blocking agent are added to the silica sol, the mixture is evenly mixed, a base catalyst is added, an inorganic fiber product is immersed in the silica sol, and the mixture is left to stand; (3) solvent replacement: the composite gel is replaced by the organic solvent; (4) drying: the composite gel is dried. With the adoption of the method, the process is simple, the production cycle is short, the cost is lower, the equipment requirement is low, reaction conditions are controllable, product performance is excellent, and the prepared silica aerogel composite material has the overall waterproof performance, the extremely low heat conductivity coefficient and the excellent high-temperature heat-insulation performance, can pass an incombustibility test under the condition that the material is ensured to be hydrophobic as a whole and reaches level A1 according to the incombustibility test.

This invention provides for compositions, which can be crosslinked by radiation to give elastomeric coatings, which comprises: (a) high-molecular weight siloxanes with multiple (meth)acrylate functional groups; and (b) reinforcing fillers selected from the group consisting of silicone resins and silicone dioxide fillers, wherein the siloxanes (a) have the general structure: [R3SiO1 / 2]a[(Z)nG-Ym-R2SiO1 / 2]a'[R2SiO2 / 2]b[(Z)nG-Ym-RSiO2 / 2]b'[RSiO3 / 2]c[SiO4 / 2]d.

The invention relates to a rubber composition containing relatively low levels of carbon black and / or silica reinforcement together with a particulate calcium carbonate and selected modifiers. The invention particularly relates to a tire having a component, particularly a tread, of such composition.

An interference filter includes a layers stack comprising a plurality of layers of at least: layers of amorphous hydrogenated silicon with added nitrogen (a-Si:H,N) and layers of one or more dielectric materials, such as SiO2, SiOx, SiOxNy, a dielectric material with a higher refractive index in the range 1.9 to 2.7 inclusive, or so forth. The interference filter is designed to have a passband center wavelength in the range 750-1000 nm inclusive. Added nitrogen in the a-Si:H,N layers provides improved transmission in the passband without a large decrease in refractive index observed in a-Si:H with comparable transmission. Layers of a dielectric material with a higher refractive index in the range 1.9 to 2.7 inclusive provide a smaller angle shift compared with a similar interference filter using SiO2 as the low index layers.

A high quality Group III-Nitride semiconductor crystal with ultra-low dislocation density is grown epitaxially on a substrate via a particle film with multiple vertically-arranged layers of spheres with innumerable micro- and / or nano-voids formed among the spheres. The spheres can be composed of a variety of materials, and in particular silica or silicon dioxide (SiO2).

A thin film interference filter system includes a plurality of stacked films having a determined reflectance; a model monitor curve; and a topmost layer configured to exhibit a wavelength corresponding to one of the determined reflectance or the modeled monitor curve. The topmost layer is placed on the plurality of stacked films and can he a low-index film such as silica or a high index film such as niobia.

The invention is concerned with the making method of the selective emitter crystal silicon solar cell including high thickness doping diffusion. It is to form the electrode window on the silicon dioxide layer of the crystal silicon chip with the printer technique cauterant, next is to conduct high thickness doping diffusion in the POCl3 atmosphere of the electrode window sector. The invention is with low cost but high productivity.

An antenna assembly for forming a barrier coating on the inner surface of a tube by means of a sealed annular chemical-plasma-reaction chamber defined by the inner wall of the tube, two spaced elements slidingly and sealingly moveable inside the tube, and a quartz tube that interconnects the cylindrical elements. The coating is formed by a PE CVD process generated inside the chamber by a transversal RF antenna unit which creates a plasma column that participates in rotation simultaneously with linear motion thus providing uniform coating of the inner surface of the tube. The method of the invention consists of depositing a layer of silicon dioxide onto the inner surface of a plastic tube by means of the aforementioned antenna assembly. The plasma column is rotated by the RF magnetic field which is rotated by using two RF generators of different frequencies that energize two groups of specifically interconnected coils.

The invention relates to a production method of an environment-friendly water-soluble gum electrochemical aluminothermic transfer printing film. The production method comprises the following steps: a PET film of 6 to 15 micron is adopted as a carrier film; the carrier film is sequentially provided with four coatings such as a releasing layer, a color layer, an aluminum layer and an adhesive layer; wherein the releasing layer, the color layer and the adhesive layer coat the coating materials on a PET basal membrane substrate by a smooth roll or an anilox roll in a forward coating mode or backward coating mode; the aluminum layer is spray-plated in a vacuum spray-plating mode; the invention adopts the environment-friendly material and the production technique to produce the aluminothermic transfer printing film product, and the key points are as follows: solvent based acrylic resin, ethylene-vinyl acetate resin, ketone resin and cellulosic resin hot melt adhesive are changed into cellulose acetate and products made by cellulose acetate; and vinyl cellulose, polyvinyl butyral and powdery silicon dioxide are synthesized by water and a mixed solvent in a mode of wetting and dispersing. The production method has the characteristics of having no solvent residue harmful to human body and being beneficial to environmental protection and the like.

The present invention discloses a nano silicon dioxide emulsion, its preparation method and application. Said emulsion contains nano silicon dioxide, silane coupling agent, surfactant and water. The described nano silicon dioxide and the described silane coupling agent are combined into a hydrophobic particle, and the described hydrophobic particles are covered with surfactant, and dispersed in the water. Its preparation method includes the following steps: adding water-soluble alcohol into the colloid solution of silicon dioxide in the water, then adding silane coupling agent and adding surfactant and water; another preparation method includes the following steps: adding water-soluble alcohol or aqueous solution of described alcohol into nano silicon dioxide gel, then adding silane coupling agent, surfactant and water. Said emulsion can be directly added into the water-based paint, and can be used for modifying water-based paint and improving various properties of the water-based paint.

The invention discloses a mesoporous WO[3-x] visible-light-driven photocatalyst with oxygen vacancy and a preparation method thereof. The method comprises the following steps: calcinating at a controlled temperature of 350-600 DEG C in air so as to obtain a mesoporous silica molecular sieve KIT-6 loaded with tungsten trioxide by taking mesoporous silica molecular sieve KIT-6 as a hard template and a silicotungstic acid or phosphotungstic acid hydrate as a tungsten trioxide precursor; then calcinating at a controlled temperature of 450-550 DEG C so as to obtain a mesoporous silica molecular sieve KIT-6 provided with oxygen vacancy and loaded with tungsten trioxide by utilizing H2 as a reducing agent; and finally, removing the mesoporous silica molecular sieve KIT-6 by use of a 10wt% HF aqueous solution, thereby obtaining the mesoporous WO[3-x] visible-light-driven photocatalyst with oxygen vacancy and relatively large specific surface area and pore diameter. The mesoporous WO[3-x] visible-light-driven photocatalyst with oxygen vacancy is capable of effectively utilizing lights to rapidly catalyze CO2 so as to generate methane, and is high in catalysis efficiency, simple in preparation process and needed equipment, environmentally friendly in preparation process and free from pollution.

An antireflection film comprising transparent base film 1 and, sequentially superimposed thereon, hard coat layer (2), high refractive index layer 3 and low refractive index layer 4. Alternatively, there is provided an antireflection film comprising a transparent base film and, sequentially superimposed thereon, a conductive high refractive index hard coat layer and a low refractive index layer. The low refractive index layer is obtained through irradiating of a coating film comprising hollow silica microparticles, a polyfunctional (meth)acrylic compound and a photopolymerization initiator with ultraviolet rays in an atmosphere of 0 to 10,000 ppm oxygen concentration so as to harden the same.