123 results about "Silica membrane" patented technology

A method for making a dense organosilicon film with improved mechanical properties includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising alkoxy silane; and applying energy to the gaseous composition comprising alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from ˜2.40 to ˜3.20, an elastic modulus of from ˜6 to ˜30 GPa, and an at. % carbon of from ˜10 to˜45 as measured by XPS.

The invention discloses an integrated high-performance LDMOS device and a preparation method thereof, and the method comprises the steps: forming a first polysilicon layer at one side of a second well region, a third well region and an oxide layer, forming a second polysilicon layer at the other side of the oxide layer, and forming resistive field plates which are located between the first polysilicon layer and the second polysilicon layer and are arranged on the oxide layer at intervals, resistive field plates are arranged in the LDMOS device, an equipotential ring is formed between the resistive field plates, the resistive field plates and the equipotential ring are arranged between a gate and a drain of the LDMOS device at intervals, only a thin silicon dioxide film layer is arranged between the surface of a drift region of the device and the resistive field plates at intervals, one side of each resistive field plate is connected with a drain electrode high potential, and a source electrode is connected with a lowest potential. A weak leakage current passing through the resistive field plate exists between the source electrode and the drain electrode, so that the surface electric field distribution between the grid electrode and the drain electrode of the device is more uniform, the peak electric fields near the grid electrode and the drain electrode are greatly weakened, the voltage resistance of the device is improved, and the HTRB reliability of the device is improved.

The invention relates to the technical field of sewage treatment, in particular to a metal sulfide nanoparticle slow-release activator for sewage treatment and a preparation method of the metal sulfide nanoparticle slow-release activator for sewage treatment. The surface of the core layer is coated with the porous silicon dioxide membrane shell layer; the citric acid modifier is loaded on a core-shell interface; according to the invention, metal sulfide (such as FeS, MoS2, WS2 and the like) micro-nano particles are used as a solid-phase slow-release activator, so that the core problem of a traditional homogeneous activation system is radically solved. Firstly, the metal sulfide exists in the form of a solid phase and can directly contact and react with permanganate without an additional dissolving step, so that the problem of complicated process operation caused by poor solubility of activating agents such as sulfite is thoroughly avoided, and the process of reclaimed water treatment is simplified. The problem of poor continuous oxidation effect of a traditional homogeneous system is thoroughly solved.

The invention discloses a universal biochip as well as a preparation method and application thereof. The preparation method of the universal biochip comprises the following steps: S1, soaking a substrate in a solution consisting of a silane reagent A, an alkaline reagent and a buffer salt solution for reaction, and curing to form a silicon dioxide film on the surface of the substrate; the material of the substrate is selected from any one of glass, metal, plastic, resin and a film material; s2, soaking the substrate treated in the step S1 in a solution of a silane reagent B connected with an active group for reaction so as to modify the active group on the surface of the silicon dioxide film; and S3, carrying out a coupling reaction on the surface active group of the substrate treated in the step S2 and a DNA probe or a group in protein to obtain the universal biochip. The method is suitable for various metal and non-metal material substrates, the preparation process is simple, the condition is mild, the biological chip can be processed into the required shape according to the material, and the application range of the biological chip is further expanded.

The invention discloses an anti-scraping lens and a processing technology thereof. The anti-scraping lens comprises a cured resin substrate, and a hardening layer is formed on the surface of the resin substrate through a sol-gel technology; the anti-reflection mixed film layers are plated on the front surface and the rear surface of the resin substrate, the anti-reflection mixed film layers sequentially comprise a silicon dioxide film layer, a zirconium-titanium mixture film layer, a silicon dioxide film layer, a zirconium-titanium mixture film layer, an ITO film layer, a silicon dioxide film layer and a super-smooth waterproof film layer from inside to outside, and the thickness of the anti-reflection mixed film layers on the front surface and the thickness of the anti-reflection mixed film layers on the rear surface are different. According to the invention, vacuum coating is carried out on the front surface and the back surface of the hardened lens, evaporation is carried out by adopting the electron gun and the ion source, and the anti-reflection mixed film layer is plated on the surface of the lens, so that high-standard protection is provided while the light transmittance is ensured, the service life of the glasses is prolonged as far as possible, and the lens is dirt-resistant and easy to clean.

The invention provides an annealing-free thin film preparation process for improving stress stability of silicon dioxide, a silicon dioxide thin film product and application. The thin film preparation process comprises the following steps: providing a substrate, and forming a silicon dioxide film layer on the substrate by adopting a chemical vapor deposition method; plasma treatment is conducted on the surface of the silicon dioxide film layer, plasma in plasma treatment is a combination of plasma-state helium and plasma-state nitrogen, and the silicon dioxide film product is obtained. According to the method, plasma treatment is carried out on the silicon dioxide film through combination of helium and nitrogen, so that the compactness of the silicon dioxide film is effectively improved, the purpose of preventing the silicon dioxide film from absorbing moisture is achieved, the stress stability is maintained, and therefore the good technical effects that the annealing treatment step is omitted, and the production cost is reduced are achieved.

The invention discloses a terahertz MEMS composite membrane switch based on a glass substrate, and belongs to the field of terahertz wireless communication equipment. The MEMS switch is of a three-dimensional structure and sequentially comprises a metal ground, a glass substrate, a coplanar waveguide signal transmission line, a silicon nitride dielectric layer and an MEMS composite film from bottom to top. The MEMS composite film is equivalent to a clamped beam structure, and an anchor area of the MEMS composite film is connected with a signal ground of the CPW; the composite film is composed of a gold film and a silicon dioxide film, the composite film, a silicon nitride dielectric layer below and a CPW signal line form a parallel plate capacitor, bias voltage is loaded through a direct-current voltage signal transmission line connected with an anchor area, the height of the MEMS composite film is changed, then the plate capacitance value is changed, and switching between the on state and the off state of a transmission signal is achieved. The MEMS switch of the composite film has the advantages of low insertion loss and high isolation in terahertz frequency band application, and can be applied to radio frequency devices such as phase shifters, attenuators, reconfigurable filters and the like.

A method of estimating a breakdown voltage of a silicon dioxide film includes; generating breakdown voltage information associated with first test dies selected from among test dies, generating a breakdown voltage estimation model by updating a parameter of a neural network model based on the breakdown voltage information, applying test voltages to second test die selected from among the test dies and distinct from the first dies and receiving currents levels for current generated by the second test dies in response to the test voltages, wherein the test voltages have respective levels lower than levels of breakdown voltages for the first test dies, and estimating breakdown voltages of the second test dies using the breakdown voltage estimation model in relation to the currents levels.

The invention belongs to the technical field of wet electronic chemicals, and particularly relates to a buffer oxide etching solution (BOE) with high selection ratio of silicon dioxide (SiO2) to silicon oxynitride (SiOxNy) in semiconductor manufacturing, and the etching solution comprises the following components in percentage by mass: 0-20% of HF, 20-40% of NH4F, 0.01-0.05% of an impregnating compound, 0.005-0.01% of an additive and the balance of ultrapure water. The wetting agent is introduced, so that the wettability of the silicon dioxide film layer can be improved, and the etching roughness is improved; meanwhile, after 2-(2-(2-hydroxyethoxy)-ethoxy)-ethyl phosphonic acid is added, a phosphonic acid group can form coordination with a Si-N bond in silicon oxynitride, and the silicon oxynitride film etching selection ratio of silicon dioxide can be remarkably increased under the condition that the silicon dioxide etching rate is not reduced. The etching liquid is stable, the solution is clear and transparent, and the addition of the additive can reduce the surface tension and improve the infiltration and undercutting capabilities of the etching liquid.

The purpose of the present invention is to provide a polyamide composition capable of forming a molded article having excellent heat dissipation properties, strength, and moisture resistance. The purpose of the present invention is also to provide a molded article having excellent heat dissipation properties, strength, and moisture resistance. The polyamide composition contains a polyamide, a fibrous inorganic reinforcing material, and a sintered body containing magnesium oxide, the sintered body being covered with a silica film, and the content of the sintered body being 35 mass% or more. The molded article contains the polyamide composition.

The application provides a novel titanium-based sunlight control coated glass and a preparation method thereof. The preparation method comprises the following steps: preparing a first titanium dioxide film layer, a second silicon dioxide film layer and a third mutually doped titanium dioxide / titanium nitride film layer on the upper surface of the glass in a tin bath by using a chemical vapor deposition method. The titanium dioxide film layer is used as a metal bridge for increasing the bonding capacity of the silicon dioxide film layer and the glass, and forms a double-layer antireflection layer together with the silicon dioxide film layer, so as to reduce the overall reflectivity and reflection interference color of the film layer. The mutually doped titanium dioxide / titanium nitride film layer is used for selectively absorbing visible light and solar energy, so as to reduce the transmittance of the visible light and the solar energy.

The utility model discloses a reflecting film and a windshield, and relates to the technical field of optical projection, and the reflecting film comprises a low-refractive-index dielectric layer and a high-refractive-index dielectric layer which are stacked in sequence; wherein the low-refractive-index dielectric layer is a silicon dioxide film layer with a porous structure, the refractive index of the low-refractive-index dielectric layer is inversely proportional to the porosity of the low-refractive-index dielectric layer, and the porosity refers to the proportion of the volume of pores in the film layer in the volume of the film layer. The silicon dioxide film layer of the porous structure is used as the low-refractive-index medium layer, the refractive index difference value of all media in the reflecting film can be increased by reducing the refractive index of the low-refractive-index medium, the film system of the reflecting film is simpler, the thickness and the preparation process of the reflecting film are easier to control, and the application range is wider. The windshield using the reflecting film has a better reflecting effect on P polarized light, so that the image display effect of a head-up display system is improved.

According to the method for adjusting the etching rate in the wet etching process, the wet etching process is adopted, a silicon nitride layer and a silicon oxide layer with a certain thickness on a semiconductor structure are removed, and the current etching rate of the silicon oxide layer is dynamically adjusted in the process of removing the silicon oxide layer with the certain thickness through wet etching, so that the etching rate of the silicon oxide layer is adjusted. By dynamically adjusting the current etching rate of the silicon oxide layer, the influence of liquid medicine periodic characteristics of wet etching on the etching rate of the silicon oxide layer can be reduced, the situation that other film layers at the bottom of a silicon dioxide film layer are accidentally damaged due to the fact that the silicon dioxide film layer at the bottom of the silicon nitride film is excessively etched is avoided, and the actual process operation time is more stable; the influence of the fluctuation factor of the liquid medicine replacement (acid replacement) period is reduced, so that the wet etching process is more stable, the low yield of products is prevented, and the device yield is improved.

The application belongs to the field of coating technology, and relates to a laser protective lens high-damage threshold coating method based on a semiconductor wafer process, comprising the following steps: sequentially performing ultrasonic cleaning and plasma activation on an optical lens substrate to obtain a pretreated lens; alternately depositing hafnium dioxide film layers and silicon dioxide film layers on the surface of the pretreated lens by using a double-target co-sputtering process to obtain a coated lens; using trimethylaluminum and ozone as precursors, growing an aluminum oxide packaging layer on the surface of the coated lens by using an atomic layer deposition process, and then performing gradient annealing treatment to obtain a laser protective lens. The whole process is systematically optimized from interface bonding, film layer structure to surface packaging. Through the synergistic effect of optimizing each link of the coating process, the intrinsic quality of the film layer is improved while the environmental adaptability is enhanced, so that the lens can withstand long-term irradiation of high-power laser, and the damage resistance and long-term stability of the laser protective lens are significantly improved.

To provide a slide structure which is suitable for industrial production without requiring a running-in process and can be adopted under a wide use environment, and a manufacturing method thereof.SOLUTION: The manufacturing method of the slide structure includes: a transfer adhesion process S1 in which a first slide element 10 on which a first hard layer 12 is formed and a silica nano particle carrier 30 having a carrier face 32 which carries the silica nano particle on a surface of the carrier base 31 in advance are prepared, a surface of the first hard layer 12 of the first slide element 10 and the carrier face 32 of the silica nano particle carrier 30 are arranged to face to each other, and the silica nano particle is transferred and adhered to the surface of the first hard layer 12 of the first slide element 10 by a friction at a predefined speed and load via a water-based lubricant to form a silica film 13; and a slide process S3 in which a second slide element 20 is prepared, the silica film 13 of the first slide element 10 and a second hard layer 22 as a slide surface of the second slide element 20 are arranged to face to each other after the transfer adhesion process S1 and then relatively slide to each other via the water-based lubricant or an oil-based lubricant.SELECTED DRAWING: Figure 1

The invention relates to a preparation method of glass beads with high silicification on surfaces, which is characterized by comprising the following steps: (1) washing the glass beads with a sodium hydroxide solution and deionized water in sequence to obtain pretreated glass beads; (2) mixing a modifier with deionized water, uniformly stirring to obtain a mixed solution, adding the pretreated glass beads into the mixed solution, and stirring for 2-3 hours to obtain modified glass beads; and (3) adding the modified glass beads into deionized water, continuously adding a sodium hydroxide solution and a tetraethoxysilane solution, uniformly stirring for reaction, separating the glass beads from the solution after the reaction is finished, and drying in a drying oven to obtain the high silicification glass beads with uniformly coated and compact surfaces. The method has the advantages that the process is simple, the coating process is stable, the reaction time is short, the energy consumption is low, the preparation process is environment-friendly, and the coating process is suitable for various glass bead specifications; and the prepared silicon dioxide film layer is uniform and strong in adhesive force, and the binding property of the glass beads and a matrix material is remarkably improved.

The application relates to a preparation method of a high-quality large-thickness silicon dioxide film layer, and belongs to the technical field of silicon-based photonic device preparation. The application aims to solve the problem that the large thickness and the high-quality and high-performance film layer cannot be considered simultaneously in the prior art, and provides a preparation method of a high-quality large-thickness silicon dioxide film layer; the method combines a dry-wet oxidation process and high-temperature annealing, designs part of the dry oxygen and the annealing process while the dry-wet-dry process is reformed, and can improve the quality and the light binding property of the large-thickness silicon dioxide film layer while the growth rate is maintained.

The invention discloses an integrated high-performance LDMOS device and a preparation method thereof. The invention forms a first polysilicon layer on a second well region, a third well region and one side of an oxide layer, forms a second polysilicon layer on the other side of the oxide layer, forms a resistive field plate between the first polysilicon layer and the second polysilicon layer and arranged at intervals on the oxide layer, and forms an equipotential ring between the resistive field plates. The resistive field plate and the equipotential ring are arranged at intervals between the gate and drain of the LDMOS device. Only a thin silicon dioxide film layer is spaced between the surface of the drift region of the device and the resistive field plate. One side of the resistive field plate is connected to a high potential of the drain, and the source is connected to a minimum potential. When the device is reverse biased, there is a weak leakage current between the source and the drain through the resistive field plate, so that the surface electric field distribution between the gate and the drain of the device is more uniform, the peak electric field near the gate and the drain is greatly weakened, the voltage resistance performance of the device is improved, and the HTRB reliability of the device is improved.

The invention belongs to the technical field of semiconductor device manufacturing processes, and relates to a slide glass wafer for SiC wafer rapid annealing, a preparation method and application, and the method comprises the steps: depositing a silicon dioxide film layer on a first silicon wafer and a second silicon wafer, and forming an etching masking layer; removing the second silicon wafer, performing dry etching on the first silicon wafer, and forming a groove corresponding to the second silicon wafer on the surface of the first silicon wafer; the first silicon wafer subjected to dry etching is put into an HF solution to be corroded so as to remove the etching masking layer, cleaning and drying are carried out, a slide wafer is obtained, the temperature measurement problem of the SiC wafer is solved in a slide wafer machining mode, low-cost machining of rapid annealing of the SiC wafer is achieved, and the temperature measurement efficiency of the SiC wafer is improved. The problems that traditional silicon-based rapid annealing equipment cannot accurately measure the surface temperature of the SiC wafer and rapid annealing of the SiC wafer is difficult to complete are solved.

The invention relates to a high-frequency-response high-temperature heat flux sensor for a flight test, which is characterized in that the type of a thermocouple is selected according to the maximum value of the surface temperature of an aircraft in the flight process, a heat transfer element is of a cylindrical structure, the end part is polished and ground, and two mounting through holes are symmetrically formed in the same distance from the center line of the cylindrical structure; positive and negative electrodes of the thermocouple are processed into wires with corresponding diameters and are fixed in the two mounting through holes of the heat transfer element, and one ends of the two electrodes are flush with the end surface of the heat transfer element; the end face of the heat transfer element provided with the thermocouple is sequentially plated with a copper film and a silicon dioxide film in a magnetron sputtering mode, and the high-frequency response characteristic of the heat flow sensor is achieved. The coated heat transfer element is fixed in the high-temperature alloy packaging shell, the tail parts of the positive electrode and the negative electrode of the thermocouple are welded with the compensating leads with the same polarity, and a cavity in the tail part of the high-temperature alloy packaging shell is filled with high-temperature glue. The sensor has the advantages of being small in size, resistant to temperature and high in frequency response.

This invention relates to a catalytic membrane for HCl oxidation reaction, the preparation method of which includes: Step 1: reacting silica particles with SiO2. ­2 A mixture of ZrO2 sol and silica gel is coated onto a hollow fiber carrier and calcined to obtain a transition layer for the membrane. Step two: A silsesquioxane sol is applied to the transition layer obtained in step one and calcined to obtain a silica membrane. Step three: The silica membrane obtained in step two is subjected to impurity removal treatment. Step four: A solution of silane coupling agent (A) and a metal salt solution (B) are prepared separately and mixed to obtain solution C. The silica membrane treated in step three is immersed in solution C and grafted with nano-metal particles using ultrasonic assistance, followed by a high-temperature reaction to obtain a catalytic membrane. The catalytic membrane designed in this invention, when applied to the HCl oxidation reaction, can separate reactants and products simultaneously, causing the reaction to shift forward, increasing the reaction conversion rate, reducing the reaction temperature, and extending the catalyst lifetime.

The invention relates to the technical field of microfluidic treatment, in particular to a nucleic acid microfluidic treatment system and method. Comprising a clamping box and an injector, the clamping box comprises a clamping plate seat and a clamping plate, the clamping plate is clamped in the clamping plate seat, the injector is clamped on the clamping plate seat, a plurality of rotary plug valves, ion exchange columns and silica gel membrane exchange columns are arranged in the clamping box, corresponding rotary valve heads are arranged on the clamping plate seat corresponding to different rotary plug valves, and the rotary valve heads are connected with the clamping plate seat. Each rotary valve head is correspondingly provided with one rotary valve motor, and different interfaces of the corresponding rotary plug valves are switched to be communicated through rotation of the rotary valve motors, so that a solution flows through the ion exchange column or the silica membrane exchange column, and switching of different plasmid purification modes is realized; the conversion of various purification modes is realized.

The embodiment of the present application provides a hard mask pattern manufacturing method and a DRAM capacitor manufacturing method, relates to the technical field of semiconductors, and can not only avoid the influence of long-time etching of polycrystalline silicon on the pattern of an insulating film, but also avoid damaging an existing metal layer and affecting the function of the metal layer in a substrate when etching a titanium dioxide film alone. The hard mask pattern manufacturing method comprises the following steps: providing a semiconductor substrate, the substrate being provided with a layer to be etched; forming a hard mask layer on the layer to be etched, the hard mask layer comprising, from bottom to top, a polycrystalline silicon film, a titanium dioxide film and a silicon dioxide film; and performing a patterning treatment on the hard mask layer to obtain a hard mask pattern.

The invention discloses a high refractive index anti-reflection blue light lens and its processing technology, which comprises: a cured resin substrate, a hardening layer formed on the surface of the resin substrate by a sol-gel process; a low-reflection mixed film layer plated on the surface of the resin substrate, the low-reflection mixed film layer sequentially comprising a zirconium oxide film layer, a silicon dioxide film layer, a titanium oxide film layer, a silicon dioxide film layer, a titanium oxide film layer, an ITO film layer, a silicon dioxide film layer, and an ultra-smooth waterproof film layer from the inside to the outside. The invention performs vacuum coating on both sides of the hardened lens, uses an electron gun and an ion source for co-evaporation, and plates a hybrid anti-reflection film on the surface of the lens, thereby reducing the reflective effect of the lens surface while improving the transmittance, avoiding the virtual image problem, and reducing the ghosting phenomenon of lights at night.

The utility model discloses a coated metal texture lens, which relates to the technical field of glasses, and comprises a base material, a nickel-chromium material layer, silicon dioxide film layers and trititanium pentoxide film layers, the nickel-chromium material layer is plated on one side surface of the base material, and the silicon dioxide film layers and the trititanium pentoxide film layers are alternately plated on one side surface, far away from the base material, of the nickel-chromium material layer. The lens provided by the utility model has the metal texture effect and the antireflection function.

The invention discloses a preparation method of a photon chip integrated microfluidic channel based on chemical mechanical polishing. Comprising the following steps: plating a silicon dioxide film on a thin-film lithium niobate photon chip by chemical vapor deposition, plating a chromium film by magnetron sputtering, directly writing a chromium mask by femtosecond laser, chemically and mechanically polishing, grinding and etching a microfluidic channel structure, carrying out wet etching on the mask, packaging with an ultraviolet curing adhesive and the like. According to the method disclosed by the invention, chemical mechanical polishing etching is used for replacing traditional photoetching, and the ultra-precision machining advantage of chemical mechanical polishing and the technical characteristics of low cost, high efficiency and the like of the femtosecond laser direct writing mask are utilized, so that a high-precision and low-roughness two-dimensional complex microfluidic channel structure can be prepared on a photon chip on a large scale; the method can be applied to the fields of on-chip optical fluid sensing, photochemical analysis, environment monitoring and the like.

The present invention discloses a method for preparing a TOPCon solar cell with a double-layer passivated contact structure, belonging to the field of TOPCon cells. A first tunneling oxide layer and a blocking polysilicon layer are first deposited on the back side of a treated silicon substrate; a second tunneling oxide layer and a doped polysilicon layer are then deposited on the deposited blocking polysilicon layer; the oxygen flow rate is then increased to form a silicon dioxide film mask on the back side; and then back-side phosphorus diffusion is performed. The present invention has the beneficial effects of significantly increasing the propulsion temperature for phosphorus diffusion, improving crystallization capability, and avoiding the increased internal diffusion caused by high-temperature phosphorus diffusion, while maintaining a good tunneling effect and the contact passivation capability of the polysilicon layer and the tunneling layer, ultimately significantly improving the efficiency of the TOPCon cell.

The utility model relates to a high-reflectivity HUD reflector, which comprises a reflector body and a film system structure arranged on the optical surface of the reflector body, and the film system structure comprises six film layers sequentially arranged on the reflector body. The six film layers comprise two aluminum oxide film layers, two silicon dioxide film layers, one trititanium pentoxide film layer and one aluminum film layer. According to the utility model, the reflection times of light on the surface of a product can be increased, so that the overall reflectivity in a visible light wave band is improved.

The invention relates to the technical field of optical tweezers, and discloses a composite film structure for capture of thermophoresis optical tweezers and a preparation method and application thereof, and the composite film structure for capture of thermophoresis optical tweezers sequentially comprises a substrate, a chromium film layer and a silicon dioxide film layer from bottom to top. A local non-uniform temperature field is generated by irradiating the composite film structure through laser, and thermophoresis capture of particles is realized by utilizing a thermal gradient field near a hot spot; when a chromium-silicon dioxide substrate is used for photo-thermal capture, a spatial light modulator is used for generating an array light trap (such as 100 or more), on-chip capture of particles can be carried out at the array photo-thermal trap, the capture power of each point is smaller than 0.1 mW, and under the condition that the laser power is the same, on-chip capture of particles can be carried out. And a larger and more stable thermal gradient field can be generated compared with substrate materials such as gold, graphene and the like so as to assist more types of photo-thermal capture.

The invention belongs to the technical field of film layer structures, and particularly provides a high-reflection film layer structure with the reflectivity larger than 95%, which comprises a metal aluminum layer, one surface of the metal aluminum layer is plated with a silicon dioxide film layer, the other surface of the silicon dioxide film layer is plated with a high-refractive-index film layer, and the other surface of the metal aluminum layer is plated with a metal chromium layer. The metal chromium film is deposited below the aluminum film in a vacuum magnetron sputtering coating mode, the adhesive ability of the aluminum film is enhanced, then the high-refractive-index and low-refractive-index oxide materials are deposited above the aluminum film to improve the reflectivity and prevent the metal film from being oxidized, meanwhile, the coating method is efficient and environmentally friendly, and the reflectivity of the prepared film layer structure is larger than 95%.