73 results about "Silica membrane" patented technology

The invention relates to the technical field of sewage treatment, in particular to a metal sulfide nanoparticle slow-release activator for sewage treatment and a preparation method of the metal sulfide nanoparticle slow-release activator for sewage treatment. The surface of the core layer is coated with the porous silicon dioxide membrane shell layer; the citric acid modifier is loaded on a core-shell interface; according to the invention, metal sulfide (such as FeS, MoS2, WS2 and the like) micro-nano particles are used as a solid-phase slow-release activator, so that the core problem of a traditional homogeneous activation system is radically solved. Firstly, the metal sulfide exists in the form of a solid phase and can directly contact and react with permanganate without an additional dissolving step, so that the problem of complicated process operation caused by poor solubility of activating agents such as sulfite is thoroughly avoided, and the process of reclaimed water treatment is simplified. The problem of poor continuous oxidation effect of a traditional homogeneous system is thoroughly solved.

The invention discloses a terahertz MEMS composite membrane switch based on a glass substrate, and belongs to the field of terahertz wireless communication equipment. The MEMS switch is of a three-dimensional structure and sequentially comprises a metal ground, a glass substrate, a coplanar waveguide signal transmission line, a silicon nitride dielectric layer and an MEMS composite film from bottom to top. The MEMS composite film is equivalent to a clamped beam structure, and an anchor area of the MEMS composite film is connected with a signal ground of the CPW; the composite film is composed of a gold film and a silicon dioxide film, the composite film, a silicon nitride dielectric layer below and a CPW signal line form a parallel plate capacitor, bias voltage is loaded through a direct-current voltage signal transmission line connected with an anchor area, the height of the MEMS composite film is changed, then the plate capacitance value is changed, and switching between the on state and the off state of a transmission signal is achieved. The MEMS switch of the composite film has the advantages of low insertion loss and high isolation in terahertz frequency band application, and can be applied to radio frequency devices such as phase shifters, attenuators, reconfigurable filters and the like.

A method of estimating a breakdown voltage of a silicon dioxide film includes; generating breakdown voltage information associated with first test dies selected from among test dies, generating a breakdown voltage estimation model by updating a parameter of a neural network model based on the breakdown voltage information, applying test voltages to second test die selected from among the test dies and distinct from the first dies and receiving currents levels for current generated by the second test dies in response to the test voltages, wherein the test voltages have respective levels lower than levels of breakdown voltages for the first test dies, and estimating breakdown voltages of the second test dies using the breakdown voltage estimation model in relation to the currents levels.

The invention belongs to the technical field of wet electronic chemicals, and particularly relates to a buffer oxide etching solution (BOE) with high selection ratio of silicon dioxide (SiO2) to silicon oxynitride (SiOxNy) in semiconductor manufacturing, and the etching solution comprises the following components in percentage by mass: 0-20% of HF, 20-40% of NH4F, 0.01-0.05% of an impregnating compound, 0.005-0.01% of an additive and the balance of ultrapure water. The wetting agent is introduced, so that the wettability of the silicon dioxide film layer can be improved, and the etching roughness is improved; meanwhile, after 2-(2-(2-hydroxyethoxy)-ethoxy)-ethyl phosphonic acid is added, a phosphonic acid group can form coordination with a Si-N bond in silicon oxynitride, and the silicon oxynitride film etching selection ratio of silicon dioxide can be remarkably increased under the condition that the silicon dioxide etching rate is not reduced. The etching liquid is stable, the solution is clear and transparent, and the addition of the additive can reduce the surface tension and improve the infiltration and undercutting capabilities of the etching liquid.

The purpose of the present invention is to provide a polyamide composition capable of forming a molded article having excellent heat dissipation properties, strength, and moisture resistance. The purpose of the present invention is also to provide a molded article having excellent heat dissipation properties, strength, and moisture resistance. The polyamide composition contains a polyamide, a fibrous inorganic reinforcing material, and a sintered body containing magnesium oxide, the sintered body being covered with a silica film, and the content of the sintered body being 35 mass% or more. The molded article contains the polyamide composition.

The application provides a novel titanium-based sunlight control coated glass and a preparation method thereof. The preparation method comprises the following steps: preparing a first titanium dioxide film layer, a second silicon dioxide film layer and a third mutually doped titanium dioxide / titanium nitride film layer on the upper surface of the glass in a tin bath by using a chemical vapor deposition method. The titanium dioxide film layer is used as a metal bridge for increasing the bonding capacity of the silicon dioxide film layer and the glass, and forms a double-layer antireflection layer together with the silicon dioxide film layer, so as to reduce the overall reflectivity and reflection interference color of the film layer. The mutually doped titanium dioxide / titanium nitride film layer is used for selectively absorbing visible light and solar energy, so as to reduce the transmittance of the visible light and the solar energy.

According to the method for adjusting the etching rate in the wet etching process, the wet etching process is adopted, a silicon nitride layer and a silicon oxide layer with a certain thickness on a semiconductor structure are removed, and the current etching rate of the silicon oxide layer is dynamically adjusted in the process of removing the silicon oxide layer with the certain thickness through wet etching, so that the etching rate of the silicon oxide layer is adjusted. By dynamically adjusting the current etching rate of the silicon oxide layer, the influence of liquid medicine periodic characteristics of wet etching on the etching rate of the silicon oxide layer can be reduced, the situation that other film layers at the bottom of a silicon dioxide film layer are accidentally damaged due to the fact that the silicon dioxide film layer at the bottom of the silicon nitride film is excessively etched is avoided, and the actual process operation time is more stable; the influence of the fluctuation factor of the liquid medicine replacement (acid replacement) period is reduced, so that the wet etching process is more stable, the low yield of products is prevented, and the device yield is improved.

The application belongs to the field of coating technology, and relates to a laser protective lens high-damage threshold coating method based on a semiconductor wafer process, comprising the following steps: sequentially performing ultrasonic cleaning and plasma activation on an optical lens substrate to obtain a pretreated lens; alternately depositing hafnium dioxide film layers and silicon dioxide film layers on the surface of the pretreated lens by using a double-target co-sputtering process to obtain a coated lens; using trimethylaluminum and ozone as precursors, growing an aluminum oxide packaging layer on the surface of the coated lens by using an atomic layer deposition process, and then performing gradient annealing treatment to obtain a laser protective lens. The whole process is systematically optimized from interface bonding, film layer structure to surface packaging. Through the synergistic effect of optimizing each link of the coating process, the intrinsic quality of the film layer is improved while the environmental adaptability is enhanced, so that the lens can withstand long-term irradiation of high-power laser, and the damage resistance and long-term stability of the laser protective lens are significantly improved.

To provide a slide structure which is suitable for industrial production without requiring a running-in process and can be adopted under a wide use environment, and a manufacturing method thereof.SOLUTION: The manufacturing method of the slide structure includes: a transfer adhesion process S1 in which a first slide element 10 on which a first hard layer 12 is formed and a silica nano particle carrier 30 having a carrier face 32 which carries the silica nano particle on a surface of the carrier base 31 in advance are prepared, a surface of the first hard layer 12 of the first slide element 10 and the carrier face 32 of the silica nano particle carrier 30 are arranged to face to each other, and the silica nano particle is transferred and adhered to the surface of the first hard layer 12 of the first slide element 10 by a friction at a predefined speed and load via a water-based lubricant to form a silica film 13; and a slide process S3 in which a second slide element 20 is prepared, the silica film 13 of the first slide element 10 and a second hard layer 22 as a slide surface of the second slide element 20 are arranged to face to each other after the transfer adhesion process S1 and then relatively slide to each other via the water-based lubricant or an oil-based lubricant.SELECTED DRAWING: Figure 1

The invention relates to a preparation method of glass beads with high silicification on surfaces, which is characterized by comprising the following steps: (1) washing the glass beads with a sodium hydroxide solution and deionized water in sequence to obtain pretreated glass beads; (2) mixing a modifier with deionized water, uniformly stirring to obtain a mixed solution, adding the pretreated glass beads into the mixed solution, and stirring for 2-3 hours to obtain modified glass beads; and (3) adding the modified glass beads into deionized water, continuously adding a sodium hydroxide solution and a tetraethoxysilane solution, uniformly stirring for reaction, separating the glass beads from the solution after the reaction is finished, and drying in a drying oven to obtain the high silicification glass beads with uniformly coated and compact surfaces. The method has the advantages that the process is simple, the coating process is stable, the reaction time is short, the energy consumption is low, the preparation process is environment-friendly, and the coating process is suitable for various glass bead specifications; and the prepared silicon dioxide film layer is uniform and strong in adhesive force, and the binding property of the glass beads and a matrix material is remarkably improved.

The application relates to a preparation method of a high-quality large-thickness silicon dioxide film layer, and belongs to the technical field of silicon-based photonic device preparation. The application aims to solve the problem that the large thickness and the high-quality and high-performance film layer cannot be considered simultaneously in the prior art, and provides a preparation method of a high-quality large-thickness silicon dioxide film layer; the method combines a dry-wet oxidation process and high-temperature annealing, designs part of the dry oxygen and the annealing process while the dry-wet-dry process is reformed, and can improve the quality and the light binding property of the large-thickness silicon dioxide film layer while the growth rate is maintained.

The invention belongs to the technical field of semiconductor device manufacturing processes, and relates to a slide glass wafer for SiC wafer rapid annealing, a preparation method and application, and the method comprises the steps: depositing a silicon dioxide film layer on a first silicon wafer and a second silicon wafer, and forming an etching masking layer; removing the second silicon wafer, performing dry etching on the first silicon wafer, and forming a groove corresponding to the second silicon wafer on the surface of the first silicon wafer; the first silicon wafer subjected to dry etching is put into an HF solution to be corroded so as to remove the etching masking layer, cleaning and drying are carried out, a slide wafer is obtained, the temperature measurement problem of the SiC wafer is solved in a slide wafer machining mode, low-cost machining of rapid annealing of the SiC wafer is achieved, and the temperature measurement efficiency of the SiC wafer is improved. The problems that traditional silicon-based rapid annealing equipment cannot accurately measure the surface temperature of the SiC wafer and rapid annealing of the SiC wafer is difficult to complete are solved.

The invention relates to a high-frequency-response high-temperature heat flux sensor for a flight test, which is characterized in that the type of a thermocouple is selected according to the maximum value of the surface temperature of an aircraft in the flight process, a heat transfer element is of a cylindrical structure, the end part is polished and ground, and two mounting through holes are symmetrically formed in the same distance from the center line of the cylindrical structure; positive and negative electrodes of the thermocouple are processed into wires with corresponding diameters and are fixed in the two mounting through holes of the heat transfer element, and one ends of the two electrodes are flush with the end surface of the heat transfer element; the end face of the heat transfer element provided with the thermocouple is sequentially plated with a copper film and a silicon dioxide film in a magnetron sputtering mode, and the high-frequency response characteristic of the heat flow sensor is achieved. The coated heat transfer element is fixed in the high-temperature alloy packaging shell, the tail parts of the positive electrode and the negative electrode of the thermocouple are welded with the compensating leads with the same polarity, and a cavity in the tail part of the high-temperature alloy packaging shell is filled with high-temperature glue. The sensor has the advantages of being small in size, resistant to temperature and high in frequency response.

This invention relates to a catalytic membrane for HCl oxidation reaction, the preparation method of which includes: Step 1: reacting silica particles with SiO2. ­2 A mixture of ZrO2 sol and silica gel is coated onto a hollow fiber carrier and calcined to obtain a transition layer for the membrane. Step two: A silsesquioxane sol is applied to the transition layer obtained in step one and calcined to obtain a silica membrane. Step three: The silica membrane obtained in step two is subjected to impurity removal treatment. Step four: A solution of silane coupling agent (A) and a metal salt solution (B) are prepared separately and mixed to obtain solution C. The silica membrane treated in step three is immersed in solution C and grafted with nano-metal particles using ultrasonic assistance, followed by a high-temperature reaction to obtain a catalytic membrane. The catalytic membrane designed in this invention, when applied to the HCl oxidation reaction, can separate reactants and products simultaneously, causing the reaction to shift forward, increasing the reaction conversion rate, reducing the reaction temperature, and extending the catalyst lifetime.

The invention relates to the technical field of microfluidic treatment, in particular to a nucleic acid microfluidic treatment system and method. Comprising a clamping box and an injector, the clamping box comprises a clamping plate seat and a clamping plate, the clamping plate is clamped in the clamping plate seat, the injector is clamped on the clamping plate seat, a plurality of rotary plug valves, ion exchange columns and silica gel membrane exchange columns are arranged in the clamping box, corresponding rotary valve heads are arranged on the clamping plate seat corresponding to different rotary plug valves, and the rotary valve heads are connected with the clamping plate seat. Each rotary valve head is correspondingly provided with one rotary valve motor, and different interfaces of the corresponding rotary plug valves are switched to be communicated through rotation of the rotary valve motors, so that a solution flows through the ion exchange column or the silica membrane exchange column, and switching of different plasmid purification modes is realized; the conversion of various purification modes is realized.

The embodiment of the present application provides a hard mask pattern manufacturing method and a DRAM capacitor manufacturing method, relates to the technical field of semiconductors, and can not only avoid the influence of long-time etching of polycrystalline silicon on the pattern of an insulating film, but also avoid damaging an existing metal layer and affecting the function of the metal layer in a substrate when etching a titanium dioxide film alone. The hard mask pattern manufacturing method comprises the following steps: providing a semiconductor substrate, the substrate being provided with a layer to be etched; forming a hard mask layer on the layer to be etched, the hard mask layer comprising, from bottom to top, a polycrystalline silicon film, a titanium dioxide film and a silicon dioxide film; and performing a patterning treatment on the hard mask layer to obtain a hard mask pattern.

The utility model discloses a coated metal texture lens, which relates to the technical field of glasses, and comprises a base material, a nickel-chromium material layer, silicon dioxide film layers and trititanium pentoxide film layers, the nickel-chromium material layer is plated on one side surface of the base material, and the silicon dioxide film layers and the trititanium pentoxide film layers are alternately plated on one side surface, far away from the base material, of the nickel-chromium material layer. The lens provided by the utility model has the metal texture effect and the antireflection function.

The invention discloses a preparation method of a photon chip integrated microfluidic channel based on chemical mechanical polishing. Comprising the following steps: plating a silicon dioxide film on a thin-film lithium niobate photon chip by chemical vapor deposition, plating a chromium film by magnetron sputtering, directly writing a chromium mask by femtosecond laser, chemically and mechanically polishing, grinding and etching a microfluidic channel structure, carrying out wet etching on the mask, packaging with an ultraviolet curing adhesive and the like. According to the method disclosed by the invention, chemical mechanical polishing etching is used for replacing traditional photoetching, and the ultra-precision machining advantage of chemical mechanical polishing and the technical characteristics of low cost, high efficiency and the like of the femtosecond laser direct writing mask are utilized, so that a high-precision and low-roughness two-dimensional complex microfluidic channel structure can be prepared on a photon chip on a large scale; the method can be applied to the fields of on-chip optical fluid sensing, photochemical analysis, environment monitoring and the like.

The present invention discloses a method for preparing a TOPCon solar cell with a double-layer passivated contact structure, belonging to the field of TOPCon cells. A first tunneling oxide layer and a blocking polysilicon layer are first deposited on the back side of a treated silicon substrate; a second tunneling oxide layer and a doped polysilicon layer are then deposited on the deposited blocking polysilicon layer; the oxygen flow rate is then increased to form a silicon dioxide film mask on the back side; and then back-side phosphorus diffusion is performed. The present invention has the beneficial effects of significantly increasing the propulsion temperature for phosphorus diffusion, improving crystallization capability, and avoiding the increased internal diffusion caused by high-temperature phosphorus diffusion, while maintaining a good tunneling effect and the contact passivation capability of the polysilicon layer and the tunneling layer, ultimately significantly improving the efficiency of the TOPCon cell.

The invention discloses a sensor for measuring various gases and a preparation method thereof, and the sensor comprises a main controller, a substrate, a silicon dioxide film layer arranged on the substrate, and a plurality of gas-sensitive sensing assemblies arranged on the silicon dioxide film layer in an array. Each gas-sensitive sensing assembly in the plurality of gas-sensitive sensing assemblies correspondingly detects at least one preset type of gas; wherein each gas-sensitive sensing assembly comprises a heating layer, and the heating layer is used for locally heating the gas-sensitive sensing assembly under the control of the main controller, so that the gas-sensitive sensing assembly works within a preset temperature; the electrode layer is used for transmitting induced current to the main controller; the induction layer is arranged on the electrode layer and is used for generating the induction current according to the gas; and the water vapor suppression layer is arranged on the induction layer and is used for enabling water vapor to be separated from the induction layer so as to increase the contact area between the induction layer and air. Therefore, various special gases can be accurately monitored.

This invention provides a surface passivation structure for a TVS diode, comprising a glass layer in a mesa-shaped region on one or both sides of a silicon substrate; a protective layer is constructed between the silicon substrate and the glass layer, the protective layer comprising at least a polycrystalline silicon film layer, and silicon dioxide films are constructed between the polycrystalline silicon film layer and the silicon substrate, and between the polycrystalline silicon film layer and the glass layer. A fabrication process for the TVS diode surface passivation structure is also proposed. This invention provides a TVS diode surface passivation structure, a dual passivation protection structure that completely isolates the device from the external environment, ensuring excellent high reliability, chemical stability, and high-temperature characteristics; simultaneously, this structure exhibits low leakage current and high conductivity, maximizing IPP capability and reducing the influence of surface electric fields.

Semiconductor devices having nanosheet architectures, e.g., transistors such as horizontal gate-all-around (hGAA) structures, methods, and apparatuses for forming such semiconductor devices are described. The methods comprise forming a cladding material around each of a first plurality of nanosheets; oxidizing a portion of the cladding material to form an oxidize film, such as a silicon oxide (SiO2) film, around the cladding material and a form a second plurality of nanosheets; annealing the second plurality of nanosheets at a temperature of less than or equal to 850° C.; and removing the oxide film.

The invention discloses a manufacturing method of a silicon carbide MOS device and the silicon carbide MOS device. According to the manufacturing method of the silicon carbide MOS device, aluminum ions and boron ions are injected through the same ion injection region, basic structures of a P + region and a P-region of the silicon carbide MOS device are formed by utilizing diffusivity difference of the aluminum ions and the boron ions in a silicon carbide material, the production process is simplified, and the manufacturing cost is reduced; multiple times of photoetching, etching turbidity and film regeneration are not needed in the whole manufacturing method, so that the production period is shortened; in addition, according to the manufacturing method, the silicon dioxide film layer is grown through deposition, and the silicon dioxide side wall is formed in the ion implantation window through dry etching; the method solves the problem that the doping concentration is difficult to control accurately and the electrical performance of the device is affected when aluminum ions are injected into the P-region in the traditional process by forming the ion injection region and injecting two ions with different properties to form the P + region and the P-region, and ensures the doping concentration of the P + region and the P-region by injecting the ions with different diffusivity.

The invention provides high-weather-resistance AG glass and a preparation method thereof, and belongs to the field of glass preparation.The preparation method comprises the steps that a glass substrate is sequentially subjected to ultrasonic cleaning, acid pickling treatment and plasma cleaning treatment, and pretreated glass is obtained; depositing a silicon dioxide film layer on the surface of the pretreated glass through magnetron sputtering; and spraying a fluorine-containing nano coating material on the silicon dioxide film layer, and baking and curing to obtain the high-weather-resistance AG glass. Through a series of precise surface treatment and multi-layer coating construction technologies, the composite coating with a specific microstructure and chemical composition is formed on the glass substrate; the anti-dazzle property of the acid pickling AG glass is utilized, light pollution is reduced, after coating treatment, the weather resistance and the easy-to-clean capacity of the BIPV assembly can be effectively improved, and the long-acting service life of the BIPV assembly under the outdoor condition is guaranteed.

This invention discloses a centrifugal microfluidic chip and a nucleic acid extraction method, specifically relating to the field of nucleic acid extraction technology. The method includes a pretreatment filtration module and a nucleic acid extraction and purification module. The sample solution undergoes primary and secondary filtration in the pretreatment filtration module to remove particulate impurities and protein precipitates, obtaining a clear sample supernatant. Nucleic acids in the supernatant are captured by a silica membrane in the nucleic acid extraction and purification module. Subsequently, a first washing solution and a second washing solution flow sequentially through the silica membrane to wash the adsorbed nucleic acids, removing residual impurities and reaction inhibitors. Finally, the eluent flows through the silica membrane, carrying the nucleic acids into the nucleic acid collection chamber, thereby obtaining the purified nucleic acid sample. This invention features a simple structure and reliable control, enabling sequential control of liquids in multiple chambers, effectively removing impurities and inhibitors from the sample, improving nucleic acid extraction efficiency and purity, and achieving a high degree of integration and automation in the nucleic acid extraction process for soil samples.

The invention discloses an etchant solution for a doped structure of a medium-low voltage MOS device, and relates to the technical field of semiconductors. Comprising chromic acid solution, hydrofluoric acid and nitric acid; x is the volume of hydrofluoric acid, y is the volume of the chromic acid solution, z is the volume of nitric acid, and the unit is mL; the ratio of x to y to z is (1: 1: 6)-(1: 1: 10). Chromic acid and HF further react to generate dichromic acid with higher oxidability, and the dichromic acid directly reacts with silicon, so that a highly-doped N-type region has a higher reaction rate, and the region is preferentially corroded to form a recess; the nitric acid oxidizes the silicon surface to generate a layer of ultra-thin silicon dioxide film, and the hydrofluoric acid efficiently dissolves the SiOO film generated by oxidation of the nitric acid, so that the pure silicon surface below is exposed, the pure silicon surface can be oxidized again, and the P-type region and the low-doped N-type region are circularly corroded. While the boundary of each doped region is ensured to be clearly displayed, the overall corrosion reaction time is effectively shortened, a fine device structure is protected from being excessively damaged in the process, and the process analysis efficiency is greatly improved.

Semiconductor devices having nanosheet architectures, e.g., transistors such as horizontal gate-all-around (hGAA) structures, methods, and apparatuses for forming such semiconductor devices are described. The methods comprise forming a cladding material around each of a first plurality of nanosheets; oxidizing a portion of the cladding material to form an oxidize film, such as a silicon oxide (SiO2) film, around the cladding material and a form a second plurality of nanosheets; annealing the second plurality of nanosheets at a temperature of less than or equal to 850 °C; and removing the oxide film.

The invention is suitable for the technical field of lenses, and provides a PC material myopia prevention and control lens based on double-surface coordinated regulation, which comprises a substrate, a scattering micro-point layer is arranged on the front side surface of the substrate, the central area of the scattering micro-point layer is free of micro-points, the diameter of the central area is less than or equal to 5mm, the edge density is 800 points / mm < 2 >, the micro-point depth is 0.5-0.8 mu m, a prism layer is arranged on the rear side surface of the substrate, and the prism layer is made of PC materials. The prism layer is an inward prism, the vertical prism degree is less than or equal to 1, the substrate angle is 3-6, the surface of the lens is provided with a filtering film, the filtering film is formed by five alternating layers of titanium dioxide film layers and silicon dioxide film layers, and the light transmittance is greater than or equal to 95%. Myopia prevention and control are effectively improved to 65%-70%, dispersion is compensated through a filtering coating film (TiO2 / SiO2 multilayer film), and the Abbe number is improved to 43 from 32.

The invention discloses a red pearlescent pigment as well as a preparation method and application thereof, and relates to the technical field of automobile coatings. The red pearlescent pigment comprises a laminated oxide film which is alternately prepared from silicon dioxide and titanium dioxide; a starting film layer and a terminating film layer of the laminated oxide film are silicon dioxide films; the number of layers of the laminated oxide films is 5-13. The prepared red pearlescent pigment has no shielding effect on millimeter wave radar, can meet the requirements of an automatic driving technology, and has the characteristics of high flickering feeling and high covering power. When the red pearlescent pigment is prepared by adopting a physical vapor deposition method, no three wastes are generated in the production process, the process is environment-friendly, the pigment performance of the prepared product is superior to that of a red pearlescent product prepared by a traditional process, and the red pearlescent pigment is expected to be popularized and applied in the field of automobile coatings.

The invention relates to a surface treatment process method for preparing a silicon carbide material by a CVD (Chemical Vapor Deposition) method, which comprises the following steps: placing the silicon carbide material prepared by the CVD method in an oxidation furnace, and carrying out oxidation treatment to form an oxide layer on the surface of the silicon carbide material; and removing the oxide layer. The oxidation treatment comprises the following steps: introducing oxygen, heating to a first preset temperature from room temperature at a speed of 3-5 DEG C / min, and carrying out heat preservation treatment; continuously raising the temperature to a second preset temperature at the speed of 2-3 DEG C / min, then raising the temperature to a target process temperature at the speed of 0.8-1.2 DEG C / min, and carrying out heat preservation oxidation; and the temperature is reduced to the first preset temperature at the speed of 2.5-3.5 DEG C / min, then is reduced to the third preset temperature at the speed of 1.3-1.8 DEG C / min, and finally is naturally reduced. A silicon carbide material is treated through an oxidation process, a defect layer is uniformly oxidized, an oxide layer (silicon dioxide film) is formed on the surface of the silicon carbide material, and then the oxide layer is removed, so that surface defects are eliminated, the service life of the SiC material is remarkably prolonged, and the stability and yield of the etching process are remarkably improved.