767 results about "Silica membrane" patented technology

Methods for forming silicon dioxide thin films on hydrophobic surfaces are provided. For example, in some embodiments, silicon dioxide films are deposited on porous, low-k materials. The silicon dioxide films can be deposited using a catalyst and a silanol. In some embodiments, an undersaturated dose of one or more of the reactants can be used in forming a pore-sealing layer over a porous material.

The amount of atoms diffused into a substrate may be made uniform or the thickness of a thin film may be made uniform in a low species utilization process by stopping the flow of gas into a reaction chamber during the low species utilization process. Stopping the flow of gas into a reaction chamber may entail closing the gate valve (the valve to the vacuum pump), stabilizing the pressure within the reaction chamber, and maintaining the stabilized pressure while stopping the gas flowing into the chamber. Low species utilization processes include the diffusion of nitrogen into silicon dioxide gate dielectric layers by decoupled plasma nitridation (DPN), the deposition of a silicon dioxide film by rapid thermal processing (RTP) or chemical vapor deposition (CVD), and the deposition of silicon epitaxial layers by CVD.

Provided is a method of setting a thickness of a dielectric, which restrains the dielectric formed in an electrode from being consumed when etching a silicon dioxide film on a substrate by using plasma. In a substrate processing apparatus including an upper electrode facing a susceptor and the dielectric formed of silicon dioxide in the upper electrode, a silicon dioxide film formed on a wafer being etched by using plasma, an electric potential of the plasma facing the dielectric in a case where the dielectric is not formed in the upper electrode is estimated based on a bias power applied to the susceptor and an A / C ratio in a chamber, and the thickness of the dielectric is determined so that an electric potential of the plasma, which is obtained by multiplying the estimated electric potential of the plasma by a capacity reduction coefficient calculated when a capacity of the dielectric and a capacity of a sheath generated around a surface of the dielectric are combined, is 100 eV or less.

A process for treating silica dielectric film on a substrate, which includes reacting a suitable hydrophilic silica film with an effective amount of a multifunctional surface modification agent. The film is present on a substrate and optionally has a pore structure with hydrophilic pore surfaces, and the reaction is conducted for a period of time sufficient for said surface modification agent to penetrate said pore structure and produce a treated silica film having a dielectric constant of about 3 or less, wherein the surface modification agent is hydrophobic and suitable for silylating or capping silanol moieties on such hydrophilic surfaces. Dielectric films and integrated circuits including such films are also disclosed.

Disclosed are a method and apparatus for forming an insulating film on the surface of a semiconductor substrate capable of improving the quality and electrical properties of the insulating film with no employment of high-temperature heating and with good controllability. After the surface of a silicon substrate is cleaned, a silicon dioxide film having a thickness of 1-20 nm is formed on the substrate surface. The silicon substrate is exposed to plasma generated by electron impact, while the silicon substrate is maintained at a temperature of 0° C. to 700° C. Thus, nitrogen atoms are incorporated into the silicon dioxide film, obtaining a modified insulating film having good electrical properties.

A manufacturing method of a semiconductor substrate provided with a through hole electrode is proposed. In accordance with the methods, it is possible to effectively form a through hole electrode in a semiconductor substrate in which a device and a wiring pattern have been already fabricated. This manufacturing method includes the steps of forming a first silicon oxide film 12 on a principal surface of the semiconductor substrate 11, forming a small hole 13 through the semiconductor substrate 11 from the opposite the step to reach to the first silicon oxide film 12, covering the inside of the small hole 13 with the second silicon oxide film 14, forming a first thin metal film 15 and a second thin metal film 16 on the first silicon oxide film 12, partially removing the first silicon oxide film 12 corresponding to the end of the small hole 13, and filling the small hole 13 with the conductive material to form a through hole electrode 17.

The silica film forming material of the present invention comprises a silicone polymer which comprises, as part of its structure, CHx, an Si—O—Si bond, an Si—CH3 bond and an Si—CHx- bond, where x represents an integer of 0 to 2.

In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radicals and excited species is generated from an oxygen (O2) gas in the plasma generation region, then the radicals and excited species flow into the processing region through the perforated holes. A monosilane (SiH4) gas is also supplied into the processing region, but the backward flow of the monosilane gas into the plasma generation region is suppressed by the plate. In the processing region, the radicals and the excited species and the monosilane gas result in a gas phase reaction that yields the silicon dioxide film formed on the substrate or the wafer with high quality.

The invention aims to provide a light emitting device comprising a base material or protective member which has improved light transmittance, heat resistance, passivation (gas barrier, oligomer release prevention and minimized outgassing), anti-water or moisture-absorption, stability against chemical degradation, dimensional and shape stability, anti-surface-reflection, electrical insulation, UV degradation resistance, and weather resistance, and is highly productive due to possible film formation under atmospheric pressure, and hence, a light emitting device featuring high reliability, ease of manufacture and low cost. The object is attained by a light emitting device comprising a base material (1) having flexibility, light transparency and heat resistance, a lower electrode (4) having light transmittance, a light emitting layer (4), and an upper electrode (4) formed on the base material, the device further comprising a silica film and / or a siliceous film (3) which is formed on the substrate side as viewed from the light emitting layer (4) or on opposite sides of the substrate by applying polysilazane and subjecting it to oxidative treatment.

The invention discloses a graphene-containing insulated radiating composition and preparation and application thereof. The composition comprises the components of silica-coating graphene, insulated heat-conducting filler, a surface treating agent, and a function additive. The preparation method comprises the following steps of: hydrolyzing ethyl silicate on the graphene surface by the sol-gel method to obtain graphene coated with a silica film on the surface; adding the surface treating agent to a mixture of the insulated heat-conducting filler and modified graphene; uniformly agitating; then adding the function additive; and uniformly dispersing to obtain the insulated radiating composition. The composition has the advantages that the graphene is processed by insulating and coating, and the insulated heat-conducting filler and additive of other forms are coordinately added, thus the composition shows high radiating improvement effect in the plastic cement and coating fields; and the composition can be widely applied to a heating element and a radiating facility of various electronic products and electrical equipment, and can greatly improve the radiating effect as well as prolong the service life of devices.

A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a film containing the perhydrosilazane polymer by heating the solution, and converting the film into a silicon dioxide film including heating the film at a first temperature in an atmosphere containing vapor, and heating the film heated at the first temperature at a second temperature lower than the first temperature in an atmosphere containing vapor or in pure water.

The invention provides a method which uses a graphic substrate to improve the illumination efficiency of a GaN-based efficiency, comprising the steps as follows: a silicon dioxide film is deposited on a sapphire substrate; a photoresist graphic array is optically etched; the photoresist graphic array is taken as a mask so as to etch the silicon dioxide film with the graphic structure; the silicon dioxide film with the graphic structure is taken as a mask so as to etch the sapphire substrate and the graphics is etched onto the sapphire substrate; the sapphire substrate is thoroughly cleaned so as to form a pyramid structure with triangular sections; a low-temperature nucleation layer grows on the graphic sapphire substrate; temperature is continuously increased on the low-temperature nucleation layer so as to grow an n-typed mixed GaN layer and an array structure which has low dislocation density and V-shaped holes on the surface; a multiple quantum well layer and a p-typed material layer required when the LED structure material grows continue to grow; furthermore, the final surface is led to still have the array structure with V-shaped holes.

To achieve a higher operating speed, higher reliability, and lower power consumption by reducing the thickness of an inter-poly silicon insulator film between a floating gate and a control gate of a flash memory, a silicon dioxide film, a silicon nitride film, tantalum pentoxide, and a silicon dioxide film are formed in a multilayer structure to serve as the inter-poly insulator film between a floating gate and a control gate. With this configuration, tantalum pentoxide formed on the silicon nitride film has a dielectric constant of 50 or more, which is higher than that of the silicon dioxide film, and the thickness of the inter-poly silicon insulator film can be reduced.

A first silicon oxide film is formed in such a manner as to cover source / drain regions of a transistor. A conductive pad is provided in the first silicon oxide film in such a manner that one end surface thereof is connected to each source / drain region and the other end surface thereof is exposed to the surface of the first silicon oxide film. A second silicon oxide film is formed on the first silicon oxide film and the pad. A conductive layer functioning as a plug is provided in the second silicon oxide film in such a manner that one end surface thereof is in contact with the pad and the other end surface thereof is connected to an interconnection layer. The surface of the first silicon oxide film is smoothly continuous to the other end surface of the pad at the same level. The conductive layer as the plug is formed in such a manner as to be smaller in size than the pad and to be in contact with the central portion of the pad.

The invention discloses a production method of the patterned sapphire substrate for the nitride epitaxial growth, which comprises the following steps: a silica coating is deposited on the sapphire substrate used for the nitride epitaxial growth; a general photetch technology is utilized to prepare a mask of photetch patterns; the photetch patterns are etched on the silica coating by utilizing the doped liquid of hydrofluoric acid, ammonium fluoride and H2O; with the patterned silica coating as a mask, the sapphire substrate are etched by adopting the doped liquid of sulphuric acid and phosphoric acid in a wet manner so that the patterns are etched on the sapphire substrate; a dilute hydrofluoric acid solution is used for wet etching so as to remove the residual silica coating and clean the sapphire substrate, and then the preparation of the patterned sapphire substrate is completed. The production method has the advantages of low cost, preventing the sapphire substrate from being damaged by dry etching, etc. The patterned sapphire substrate can be used for the epitaxial growth of nitrides with low dislocation density and high crystal weight.

A method for manufacturing a memory device having a vertical structure according to one embodiment of the present invention comprises: a step for alternatingly laminating one or more insulation layers and one or more sacrificial layers on a substrate; a step for forming a penetration hole for penetrating the insulation layer and the sacrificial layer; a step for forming a pattern for filling up the penetration hole; a step for forming an opening for penetrating the insulation layer and the sacrificial layer; and a step for removing the sacrificial layer by supplying an etchant through the opening, wherein the step for laminating the insulation layer includes a step for depositing a first silicon oxide film by supplying to the substrate at least one gas selected from the group consisting of SiH4, Si2H6, Si3H8, Si4H10, and the step for laminating the sacrificial layer includes a step for depositing a second silicon oxide film by supplying dichlorosilane (SiCl2H2) to the substrate.

A surface of a semiconductor wafer with a gate of a high dielectric constant film formed thereon is heated to a target temperature for a short time by irradiating the surface with a flash of light. This promotes the crystallization of the high dielectric constant film while suppressing the growth of an underlying silicon dioxide film. Subsequently, the temperature of the semiconductor wafer subjected to the flash heating is maintained at an annealing temperature by irradiating the semiconductor wafer with light from halogen lamps. An annealing process after the flash heating is performed in an atmosphere of a gas mixture of hydrogen gas and nitrogen gas. The annealing process is performed on the semiconductor wafer in the atmosphere of the hydrogen-nitrogen gas mixture, so that defects present near the interfaces of the high dielectric constant film are eliminated by hydrogen termination.

A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room temperature. The silicon dioxide film removing method of removing a silicon dioxide film formed on a workpiece in a processing vessel 18 that can be evacuated uses a mixed gas containing HF gas and NH3 gas for removing the silicon dioxide film. The silicon dioxide film can be efficiently removed from the surface of the workpiece by using the mixed gas containing HF gas and NH3 gas.

A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500° C. and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.

A method of making an anti-reflective film comprises preparing a liquid composition with specific amounts of tetraethyl orthosilicate, polyethylene glycol, HCl, ethanol and at least one alcohol having a higher boiling point than ethanol and miscibility with both ethanol and water; applying the liquid composition onto a surface of a substrate to form a liquid film; evaporating the ethanol and the at least one alcohol from the liquid film to form a solid film; and heating the solid film to form a silica film.

This invention relates to a chemical transformation of the bridging organic groups in metal oxide materials containing bridging organic groups, such as bridged organosilicas, wherein such a transformation greatly benefits properties for low dielectric constant (k) applications. A thermal treatment at specific temperatures is shown to cause a transformation of the organic groups from a bridging to a terminal configuration, which consumes polar hydroxyl groups. The transformation causes k to decrease, and the hydrophobicity to increase (through ‘self-hydrophobization’). As a result of the bridge-terminal transformation, porous organosilica films are shown to have k<2.0, E>6 GPa, do not require additional chemical surface treatment for dehydroxylation (hydrophobicity).

A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to reduce the surface roughness such as protrusions that cause shunts. In one embodiment, the surface roughness is reduced by coating surface with a thin silicon dioxide which fills the cavities and recesses around the protrusions and thereby reducing the surface roughness. After the silicon dioxide film is formed, a contact layer is formed over the ruthenium layer and the exposed portions of the substrate to complete the base.

The invention relates to selective diffusion technology for a crystalline silicon solar cell, which comprises high-concentration phosphorous diffusion in a facade electrode grid line area and low-concentration phosphorous diffusion out of the facade electrode grid line area, and comprises the following steps: after a silicon chip is cleaned and made to be velvet, preparing a layer of dense silicon dioxide film on the silicon chip as a diffusion blocking layer, then selectively removing an oxidation film in the electrode grid line area by adopting laser grooving technology and forming a groove with a definite depth, and performing the high-concentration phosphorous diffusion to form heavy doping in the electrode area. The selective emitter solar cell prepared by the technology not only has high short wave efficiency, but also has lower electrode resistance and contact resistance; and compared with the conventional corrosion electrode figures adopting photoetching technology, the technology has the advantages of low equipment cost and high production efficiency, and is applicable to industrialized production of the crystalline silicon solar cell.

Methods and devices for isolating and sorting nanoparticles are disclosed herein. Nanopores of a desired size can be formed in silicon dioxide membranes and used as filters to separate nanoparticles. Devices are also provided herein for sorting nanoparticles with multiple filters having various sized nanopores.

In order to suppress the chromaticity shift and corrosion associated with the deterioration of a sulfide phosphor particle, this phosphor sheet is produced using a phosphor particle-containing resin composition which comprises: covered phosphor particles; polymerizable compound; and a polymerization initiator. The covered phosphor particles are obtained by covering phosphor particles with silicon dioxide films, wherein among the phosphor particles, at least sulfide phosphor particles are covered with silicon dioxide films that contain a metal oxide powder. Thus, the phosphor sheet can be inhibited from emitting a sulfur-based gas, and exhibits a minimized chromaticity shift, even when the phosphor sheet is present in such a manner that the edge of the phosphor layer of the sheet is in an exposed state.

The invention relates to a method for preparing a collagen protein / silica membrane double-layer stent. According to the invention, a collagen sponge with a porous network structure is prepared through different crosslinking methods, and a layer of silica membrane with different thicknesses is coated on the collagen sponge again, then the collagen protein / silica membrane double-layer stent is prepared. The collagen protein / silica membrane double-layer stent obtained in the invention has a good effect in an application of being used as an artificial skin stent material, and two layers of the material have different functions, namely the outer layer of the silica membrane has higher mechanical strength to be capable of supporting and protecting a wound, and a good gas-liquid permeability performance to be capable of effectively preventing fluid loss, and a moderate density performance to be capable of preventing bacterial infections and providing a moister environment for wound repair; the inner layer of the collagen sponge can effectively promote cell proliferation and differentiation, delay wound contraction and accelerate wound healing.

The invention relates to packaging glass for solar cells, in particular to photovoltaic glass plated with a temperable anti-reflection film layer and a manufacturing method thereof. The photovoltaic glass comprises a low-iron super white patterned glass substrate (1) and an anti-reflection film layer (4), wherein one side of the low-iron super white patterned glass substrate (1) is a textured surface (2), while the other side is a patterned surface (3); the anti-reflection film layer (4) is plated on the textured surface (2) of the low-iron super white patterned glass substrate (1); the anti-reflection film layer (4) is formed by coating anti-reflection coating film liquid on the textured surface (2) of the low-iron super white patterned glass substrate (1) and performing surface drying, heating, pre-curing and tempering in turn; and a nano-scale silicon dioxide film layer is formed on the textured surface (2) of the low-iron super white patterned glass substrate (1). The photovoltaic glass plated with the temperable anti-reflection film layer produced by the method has the characteristics of high power generation increment, high film layer hardness, high acid and alkali resistance, high weather resistance, great film layer adhesion and the like.

A film of silicon dioxide is formed on the silicon-germanium layer, and a high dielectric constant film is further formed on the film of silicon dioxide. First irradiation from a flash lamp is performed on the semiconductor wafer to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 3 milliseconds to 1 second. This promotes the crystallization of the high dielectric constant film while suppressing the alleviation of distortion in the silicon-germanium layer.

A first silicon oxide film is formed in such a manner as to cover source / drain regions of a transistor. A conductive pad is provided in the first silicon oxide film in such a manner that one end surface thereof is conducted to each source / drain region and the other end surface thereof is exposed to the surface of the first silicon oxide film. A second silicon oxide film is formed on the first silicon oxide film and the pad. A conductive layer functioning as a plug is provided in the second silicon oxide film in such a manner that one end surface thereof is in contact with the pad and the other end surface thereof is conducted to an interconnection layer. The surface of the first silicon oxide film is smoothly continuous to the other end surface of the pad at the same level. The conductive layer as the plug is formed in such a manner as to be smaller in size than the pad and to be in contact with the central portion of the pad.