81 results about "Rapid thermal processing" patented technology

The invention discloses a method for growing a low-surface-defect epitaxial wafer on a heavily-doped silicon substrate and the epitaxial wafer, and belongs to the field of semiconductor material preparation. The method comprises the following steps: carrying out rapid heat treatment on a heavily doped silicon substrate of which the resistivity is not greater than 1.15 m omega.cm in an inert atmosphere at the treatment temperature of 1000-1500 DEG C and the heating / cooling rate of 10-120 DEG C / s, and keeping the high temperature for 30-120 seconds; then HCl gas phase polishing is carried out at the temperature of 650-1250 DEG C, and mixed gas of HCl and hydrogen is introduced to remove a surface silicon layer by 50-150 nm; and finally growing an epitaxial layer. And the substrate can be subjected to particle detection and screening, and only the substrate with the specific pattern defect is subjected to the treatment. According to the method, through the synergistic effect of RTP and HCl polishing, in-vivo defect repairing and surface finishing are achieved, the number of LPDs, larger than or equal to 55 nm, on the surface of the epitaxial wafer is stably reduced to 10 or below, and the quality of the epitaxial wafer is remarkably improved.

The invention discloses a temperature control method, device and equipment for semiconductor equipment and a storage medium, and relates to the technical field of temperature control, and the method comprises the steps: calculating the equivalent radiation temperature of the brightness of a slit cavity observation band based on the brightness of the slit cavity observation band in an edge infrared observation annular region of a rapid heat treatment furnace and the surface emissivity of a wafer; solving the equivalent temperature of the inner edge of the quartz clock cover; on the basis of the equivalent radiation temperature and the equivalent temperature of the inner edge of the quartz clock cover, net radiation heat incoming power transmitted to a wafer edge belt of the wafer by an annular slit radiation cavity in the rapid heat treatment furnace is calculated; and solving a target lamp area power replacement vector of the rapid heat treatment furnace based on the net radiation heat incoming power. According to the invention, the initiative and accuracy of wafer edge temperature control can be improved.

The invention relates to the technical field of semiconductor processing, in particular to an oxidation induced fault suppression system for a monocrystalline silicon rapid heat treatment process, comprising: an RTP reaction chamber having an outer reaction chamber and a quartz reaction chamber arranged therein; the heating unit is provided with an upper heating unit and a lower heating unit which are respectively positioned at the top and the bottom of the quartz reaction cavity; the gas path structure is provided with an upper-layer process gas pipeline and a lower-layer process gas pipeline which are connected to the interior of the quartz reaction cavity, high-purity argon is introduced into the upper layer, nitrogen-hydrogen mixed gas is injected into the lower layer, and oxygen readsorption is inhibited through gas layering; the in-situ monitoring module is arranged on the lower side of the quartz reaction cavity and is used for monitoring the crystal temperature gradient and the oxygen precipitation density.

The invention discloses a structure for improving the stability of a rapid heat treatment process, and belongs to the technical field of semiconductor process equipment, rapid heat treatment equipment comprises an edge ring and a support ring, and the edge ring is flatly placed on the support ring; the middle of the edge ring is provided with a placing groove used for placing a wafer, the outer side of the edge ring is provided with an outer ring structure extending downwards, the edge ring is further provided with an inner ring structure between the outer ring structure and the placing groove, an annular groove is formed between the inner ring structure and the outer ring structure, an opening of the annular groove faces downwards, and the top of the supporting ring is located in the annular groove. The inner ring structure plays a role in fixing and supporting, even if the edge ring and the supporting ring are heated to deform, the gap between the edge ring and the supporting ring can still be ensured not to be too large or not to be uniform, and then the wafer can still be stably and firmly lapped on the edge ring, so that the wafer quality is improved. The problem that the process is unstable due to the fact that the deviated edge of the wafer makes contact with the edge ring is solved, it is guaranteed that the wafer is heated evenly, and the process stability of the rapid heat treatment equipment is improved.

The invention discloses a rotary air inlet device for rapid heat treatment equipment and a using method of the rotary air inlet device, and belongs to the technical field of semiconductor equipment manufacturing. The rotary air inlet device comprises an air inlet pipeline, an air outlet pipeline and a base, a cavity is formed in the base, and the air outlet pipeline is arranged above the cavity; a plurality of air inlet holes are evenly formed in the bottom of the air outlet pipeline in the axis direction, one ends of the air inlet holes are communicated with the air outlet pipeline, the other ends of the air inlet holes are communicated with the cavity, the bottom of the air outlet pipeline is located in the cavity, one end of the air outlet pipeline is communicated with an air outlet of the air inlet pipeline, and the air outlet pipeline is rotationally connected with the base. The gas inlet holes are formed in the bottom of the gas outlet pipeline to uniformly introduce process gas into the cavity, and the gas outlet pipeline is rotationally connected with the base, so that the included angle between the gas inlet holes in the bottom of the gas outlet pipeline and the vertical direction can be adjusted, the inlet angle of the process gas entering the cavity is controlled, and the gas flow rate in the cavity is controlled; and the effective regulation and control on the film thickness distribution are realized.

The invention relates to the field of semiconductor packaging materials, in particular to a high gold bonding alloy wire and a production process and application thereof, and the production process comprises the following steps: smelting and quickly solidifying raw materials with the purity being greater than or equal to 99.999% to prepare a gold alloy ingot with the gold content being greater than or equal to 99.99%; carrying out hot working and multi-pass cold drawing on the gold alloy cast ingot, and carrying out intermediate annealing during cold drawing to obtain an intermediate wire with the diameter of 50-200 microns; plastic twisting deformation is applied to the middle wire, and the twisting deformation degree ranges from 30 circles per meter to 120 circles per meter; the intermediate wire subjected to twisting deformation is subjected to rapid heat treatment, the heat treatment temperature ranges from 350 DEG C to 550 DEG C, the heat treatment time ranges from 2 s to 8 s, and then rapid cooling is conducted; and precisely drawing the wire material subjected to heat treatment to obtain a final finished product with the diameter of 15-33 microns. Through coordination of the components and the process, the problem of sliding balls or pseudo soldering defects is solved, and a high-strength and low-radian product is obtained.

The application discloses a nanocrystalline soft magnetic alloy prepared by rapidly heat treating an amorphous precursor strip, wherein the amorphous precursor strip is composed of Fe a Si b B c P d Ni e Cu f M g , wherein a+b+c+d+e+f+g=100, M is one or two of Nb, Mo or Ta elements, 0

The invention discloses an ultra-fast degreased and sintered dental restoration based on a photocuring technology and a preparation method thereof, and relates to the technical field of photocuring dental glass ceramic manufacturing. According to the preparation method of the dental restoration based on the ultra-fast degreasing and sintering of the photocuring technology, the photocrosslinking compound and the thermal crosslinking compound are simultaneously introduced into the slurry system, and the low-molecular-weight solvent and the ceramic powder with high solid content are matched, so that a green body structure capable of keeping integrity under the condition of fast heat treatment is effectively constructed. By combining Joule heating ultra-fast high-temperature sintering equipment, the green body can cross a critical temperature interval in which the green body is easy to crack in an extremely short time, meanwhile, structural relaxation and defect accumulation which are possibly generated in a slow heating process are inhibited, and the microstructure uniformity and reliability of the glass ceramic material in a fast densification and crystallization process are ensured. According to the invention, ultra-fast degreasing and sintering of the dental ceramic material are realized.

Embodiments of a lamp housing for a processing chamber are provided herein. In some embodiments, a lamp housing for a processing chamber includes: a first plate having a plurality of first openings; the copper plate is provided with a plurality of second openings; a plurality of tubes, the plurality of tubes being welded to the first plate at a first end of the plurality of tubes by a welding alloy, and the plurality of tubes being welded to the copper plate at a second end of the plurality of tubes by the welding alloy, wherein the plurality of tubes have a central opening aligned with the plurality of first openings and the plurality of second openings, and wherein the welding alloy comprises a nickel-containing alloy or a copper-containing alloy wherein the copper-containing alloy does not comprise gold; and an annular sheath surrounding the plurality of tubes and welded to the first plate by the welding alloy.

The application relates to the field of high-temperature alloy coating materials and post-processing technology, in particular to a laser cladding ceramic reinforced nickel-based high-temperature alloy coating heat treatment process and system. Through the heat treatment process combined with ultra-high temperature short-time treatment and integrated rapid air cooling, and the rapid heat treatment equipment with air cooling cavities and high-temperature cavities, the problems that the strength and plasticity of the laser cladding oxide ceramic dispersion strengthened nickel-based high-temperature alloy coating are difficult to coordinate, the organization regulation is not accurate, and the existing equipment cannot efficiently and stably realize the seamless connection of the high-temperature treatment and rapid cooling process are solved.

The present invention discloses an anti-interference detection method for a wafer temperature measurement system, which belongs to the field of semiconductor rapid thermal processing technology. The anti-interference detection method includes the following steps: a temperature sensor detects the temperature of a wafer, an original sample value obtained by the temperature sensor is first subjected to noise interference filtering processing by a temperature detector, and then the processed data is sent to a temperature controller as the detected temperature of the wafer. The temperature controller compares the detected temperature with the formula set temperature, and then adjusts the output power to form a closed-loop control; the noise interference filtering processing includes: the original sample value obtained by the temperature sensor is first subjected to data verification, the verified data is subjected to de-extreme value filtering, and then a noise estimation algorithm is used to perform real-time estimation and identify steady-state noise. The steady-state noise is removed to obtain the actual temperature of the wafer. The present invention adopts de-extreme value filtering in terms of random disturbance and adopts a noise estimation method in terms of stable sinusoidal disturbance, significantly improving the accuracy of temperature measurement.

This invention discloses a method for preparing high sheet resistance shallow pn junction single-crystal silicon wafers based on rapid boron diffusion, comprising the following steps: S1: depositing a boron-containing precursor on the textured silicon wafer surface; S2: depositing a low-temperature oxide layer on the surface of the boron-containing precursor; S3: placing the silicon wafer with the deposited low-temperature oxide layer in a rapid thermal processing device, rapidly heating it to 1050-1350℃ at a heating rate of 5-200℃ / s, holding it at this temperature for 20-600s, and then rapidly cooling it to complete the diffusion and activation of boron atoms in the silicon wafer. This invention employs a combination of low-temperature deposition and rapid boron diffusion, which can significantly shorten the boron diffusion time, reduce energy consumption, and shorten the high-temperature processing time. It also suppresses the formation of oxygen precipitate defects at the source, eliminating problems such as black cores and black rings in batteries, and significantly improving carrier lifetime and material electrical performance.

The utility model discloses a heat treatment device for wear-resistant lining plate processing, which relates to the technical field of wear-resistant lining plate processing and comprises a platform and a high-frequency heating component, a stable guide rail is mounted at the top of the platform, stable pedestals are mounted on the surface of the stable guide rail in a bilateral symmetry manner, and a lifting component is vertically mounted at one end of the top of the platform. The high-frequency heating component is connected to one end of the lifting assembly. According to the heat treatment device for processing the wear-resistant lining plate, the high-frequency heating component is arranged and is connected with external power frequency alternating current supply equipment in a matched manner, and a magnetic field with the same frequency is converted through the high-frequency heating coil according to the electromagnetic induction principle and then acts on the wear-resistant lining plate in the magnetic field; in this way, rapid heat treatment of the wear-resistant lining plate can be achieved, meanwhile, the heating uniformity of the surface of the wear-resistant lining plate can be guaranteed through cooperation with the structural arrangement of the lifting assembly, and the heat treatment effect of the wear-resistant lining plate cannot be easily affected by the external environment.

A low carbon low alloy duplex steel and hot dip galvanized duplex steel with tensile strength ≥ 980MPa and their rapid heat treatment manufacturing method, the chemical composition of the steel is as follows in mass percent: C: 0.05-0.17%, Si: 0.1-0.7%, Mn: 1.4-2.8%, P ≤ 0.020%, S ≤ 0.005%, B ≤ 0.005%, Al: 0.02-0.055%, and may further contain two or more of Nb, Ti, Cr, Mo, and V, and Cr + Mo + Ti + Nb + V ≤ 1.1%, with the balance being Fe and other unavoidable impurities. The manufacturing method includes smelting, casting, hot rolling, cold rolling, and rapid heat treatment steps. By controlling the rapid heating, short-time holding time and rapid cooling processes in the rapid heat treatment process, the present invention changes the recovery of the deformed structure, recrystallization and austenite phase transformation processes, increases the nucleation rate, shortens the grain growth time, refines the grains, increases the strength of the material and expands the performance range of the material.

This invention discloses a rapid thermal treatment device, method, and application for silicon wafer surfaces based on LED light sources. The device includes an LED array light source module, a positioning mechanism, and a drive control unit. The LED array light source module emits light in the 350nm to 850nm wavelength range. The positioning mechanism maintains a working distance of 1-5cm between the emitting surface of the LED array light source module and the surface of the silicon wafer to be treated. The drive control unit is electrically connected to the LED array light source module, ensuring that the light power density irradiated onto the silicon wafer surface is greater than 5W / cm². This invention provides a rapid thermal treatment device, method, and application for silicon wafer surfaces based on LED light sources, reducing thermal damage to silicon wafers.

The invention discloses an electric heating repairing and strengthening method for a TC4 titanium alloy welded joint, which adopts a high-energy pulse current processing device to carry out short-time and rapid heat treatment on the specified TC4 titanium alloy welded joint by changing electric pulse parameters under the protection of inert gas so as to repair the defects of a welding fusion zone and improve the phenomena of coarse grains and the like in a heat affected zone. The method is simple, rapid, efficient and energy-saving, fixed-point heat treatment can be carried out on the designated area of the component, the mechanical property of the welding area can be improved and recovered, the strength and plasticity of the titanium alloy are improved at the same time, the strength is improved by 21-41 MPa, meanwhile, the plasticity is improved by 29%-55%, and the method has good application prospects.

The present invention discloses a Mg, O, Br triple-doped Li-Y-Cl-S-based amorphous solid electrolyte material, its preparation method and application, belonging to the technical field of all-solid-state lithium batteries, with a chemical general formula of Li a Y b S d‑z O z Cl c‑y Br y Mg w , where Mg2 + substitutes for Li + and introduces equimolar lithium vacancies, O 2‑ substitutes for part of S 2‑ , Br ‑ substitutes for part of CI ‑‑ The preferred doping range is 0.1 ≤ z ≤ 0.3, 0 < y ≤ 0.4, 0.05 < w ≤ 0.3. This material is prepared by a high-energy ball milling mixing method combined with a low-temperature rapid heat treatment process, presenting a single-phase amorphous structure, with a room-temperature ionic conductivity ≥ 1.2x10 ‑2 S / cm, significantly reducing the interfacial impedance and greatly improving the air humidity resistance stability. When applied to an all-solid-state lithium metal battery, it has good compatibility with a high-nickel NMC811 positive electrode and a lithium negative electrode, can achieve long-term stable cycling at room temperature, and significantly improve the battery safety and cycle life.

The application relates to the technical field of piezoelectric materials, in particular to a lead zirconate titanate film and a low-temperature preparation method and application thereof, the preparation method comprising the following steps: Ti metal is taken as a radio frequency target material to perform first sputter deposition treatment on a substrate to form a Ti adhesion layer; a bottom electrode is formed on the Ti adhesion layer; Pb x Zr 0.52 Ti 0.48 O3 ceramic is taken as a radio frequency target material to perform second sputter deposition treatment on the bottom electrode, rapid heat treatment is performed, a PZT seed layer is formed; Pb x Zr 0.52 Ti 0.48 O3 ceramic is taken as a radio frequency target material to perform third sputter deposition treatment on the PZT seed layer, rapid heat treatment is performed, the step is repeated, and a lead zirconate titanate film is formed. In the process of sputter deposition of the PZT film material, the substrate tray is not additionally heated, the loss and volatilization of PbO are reduced, the film component stability can be effectively maintained; more crystal nuclei are provided by the PZT seed layer, the uniform crystallization of the PZT film is promoted, the crystallization quality and electrical properties of the PZT film are improved, the crystal boundary defects are reduced, and the adhesion and stability of the film and the substrate are enhanced.

The application provides a rapid heat treatment device for amorphous nanocrystalline magnetic cores, and relates to the technical field of heat treatment devices.The device comprises a heat treatment furnace, a fixed shell is fixedly installed at the lower end of the heat treatment furnace, a movable atmosphere structure is arranged on the inner side of the fixed shell, a rotating and oscillating integrated bearing structure is arranged on the movable atmosphere structure, and a self-adaptive adjustment structure is arranged on the rotating and oscillating integrated bearing structure.When the pressure in the heating cavity increases, one-way driving of the second single-acting cylinder drives the gate valve gate to descend and reduce the atmosphere delivery amount, and one-way driving of the first single-acting cylinder drives the sliding block to slide, thereby reducing the eccentric distance between the first ball head hinge and the second ball head hinge and reducing the oscillation amplitude, so that the atmosphere spraying amount and the oscillation amplitude can be automatically adjusted according to the internal pressure of the heating cavity, the problems of poor atmosphere flow and excessive oscillation damage to the surface gas film of the magnetic core under high pressure are avoided, and the stability of the amorphous nanocrystalline magnetic core heat treatment quality under different pressure working conditions is ensured.

The invention provides a rapid heat treatment device for an amorphous nanocrystalline magnetic core, and relates to the technical field of heat treatment devices.The rapid heat treatment device comprises a heat treatment furnace, a fixed shell is fixedly installed at the lower end of the heat treatment furnace, a movable atmosphere structure is arranged on the inner side of the fixed shell, and a rotation and oscillation integrated bearing structure is arranged on the movable atmosphere structure; the rotation and oscillation integrated bearing structure is provided with a self-adaptive adjusting structure, and through the arrangement of the self-adaptive adjusting structure, when the pressure of the heating cavity is increased, one path drives the second single-acting air cylinder to drive the gate valve to descend to reduce the atmosphere conveying amount, and the other path drives the first single-acting air cylinder to drive the sliding block to slide; the eccentric distance between the first ball hinge and the second ball hinge is reduced, and the oscillation amplitude is reduced, so that the atmosphere spraying amount and the oscillation amplitude can be automatically adjusted according to the internal pressure of the heating cavity, and the problem that an air film on the surface of a magnetic core is damaged due to unsmooth atmosphere flowing and excessive oscillation in a high-pressure state is solved; and the stability of the heat treatment quality of the amorphous nanocrystalline magnetic core under different pressure working conditions is ensured.

The invention provides a preparation method and application of a CdS / Sb2 (S, Se) 3 heterojunction, and relates to the technical field of photovoltaic materials. The preparation method of the CdS / Sb2 (S, Se) 3 heterojunction comprises the following steps: depositing CdCl2 on a CdS film, and carrying out first annealing to obtain a first film; depositing a Sb2 (S, Se) 3 absorption layer on the first thin film, and performing second annealing to obtain a CdS / Sb2 (S, Se) 3 heterojunction; and the second annealing is single-face annealing, specifically, annealing is directly conducted on a platform preheated to 350-400 DEG C for 10-20 min. According to the one-way rapid heat treatment (URTP) technology for preheating, the heating speed and the cooling speed are moderate, the annealing uniformity is improved, the process time of second annealing is shortened, a proper thermal gradient is formed, uniform crystallization of the Sb2 (S, Se) 3 thin film is effectively promoted, sufficient element migration time is guaranteed, the pinhole problem caused by rapid heating can be eliminated, and the yield of the CdS / Sb2 (S, Se) 3 thin film is improved. The interface quality of the Sb2 (S, Se) 3 heterojunction is improved, and the S and / or Se loss and defect density of the Sb2 (S, Se) 3 film are reduced.

In the present invention, a highly formable hot-dip aluminum galvanized or hot-dip zinc aluminum magnesium plated dual-phase steel having a tensile strength of ≥ 590MPa and a rapid heat treatment hot-dip manufacturing method are provided, in which the mass percentages of the components of the steel are as follows: C: 0.045-0.12%, Si: 0.1-0.5%, Mn: 1.0-2.0%, P ≤ 0.02%, S ≤ 0.006%, Al: 0.02-0.055%, and may further contain one or two of Cr, Mo, Ti, Nb, and V, and Cr+Mo+Ti+Nb+V ≤ 0.5%, with the balance being Fe and other unavoidable impurities. The present invention uses rapid heat treatment to change the recovery of deformation structure during the annealing process, the recrystallization of ferrite, and the phase transformation process of austenite, increase the number of crystal nucleation points, shorten the grain growth time, and increase the heat treatment efficiency, while at the same time improving the strength and formability (n 90 value) and widen the performance range of the material.

The invention discloses a cavity for rapid heat treatment equipment and a using method thereof, and belongs to the technical field of semiconductor equipment.The cavity for the rapid heat treatment equipment comprises a chamber and a base, the side wall of the chamber is provided with an air inlet cavity and a wafer conveying opening, the base is internally provided with an air inlet and uniformizing cavity, and the bottom of the cavity is provided with a plurality of air inlets; outlets of the plurality of air inlets are communicated with the air inlet uniformizing cavity, a plurality of air inlet uniformizing holes are uniformly formed between the air inlet uniformizing cavity and the air inlet cavity, exhaust ports are formed in the side wall of the wafer conveying port, and each exhaust port is communicated with an exhaust pipeline. According to the invention, air in the wafer conveying process is reduced by arranging the wafer conveying port, the air inlet, the air inlet uniformizing cavity and the air inlet uniformizing hole, the oxygen discharging efficiency is improved, and the capacity of the whole machine is improved; in addition, the exhaust port is arranged on the side of the wafer conveying port, so that the problem that the purging efficiency is reduced due to diffusion caused by air flowing through the cavity in the nitrogen purging process before the process is avoided, the nitrogen purging time is shortened, and the capacity of the whole machine is improved.

The invention provides a method for improving the quality of a gate oxide layer, and the method comprises the steps: providing a substrate, and forming a gate oxide layer on the substrate; performing ion implantation on the surface of the gate oxide layer, wherein the implanted ions are consistent with semiconductor elements contained in the material of the gate oxide layer; and carrying out rapid heat treatment on the gate oxide layer in an inert gas and oxygen atmosphere, so that ions injected into the gate oxide layer react with oxygen to improve the surface quality of the gate oxide layer. According to the method, ion implantation is carried out on the surface of the gate oxide layer, and rapid heat treatment is carried out in the inert gas and oxygen atmosphere, so that ions implanted on the surface of the gate oxide layer react with oxygen to form a more compact surface, and the surface quality of the gate oxide layer is improved.

To provide a method of manufacturing a semiconductor wafer of single crystal silicon which satisfies mechanical robustness without being hindered by an oxygen-induced stacking fault (OSF defect), and to provide a semiconductor wafer made of single crystal silicon.SOLUTION: A method for producing a semiconductor wafer of monocrystalline silicon includes growing a single crystal of silicon by the Czochralski (CZ) method, splitting at least one semiconductor wafer of monocrystalline silicon from the single crystal, and performing a first rapid thermal annealing (RTA), a second RTA treatment, and a third RTA treatment of the semiconductor wafer in this order.SELECTED DRAWING: Figure 1

The invention relates to a method for monitoring a temperature field of an RTP thermal annealing cavity. The method is characterized by comprising the following steps: S100, providing a silicon substrate; s200, placing the silicon substrate in a cavity of RTP equipment, and performing thermal oxidation treatment in an oxygen-containing atmosphere to enable a silicon dioxide oxide layer to grow on the surface of the silicon substrate; s300, measuring the thickness of the oxide layer at a plurality of preset positions on the surface of the silicon substrate; s400, determining the temperature field distribution of the RTP equipment cavity based on the thickness of the oxide layer at the plurality of preset positions; wherein the silicon substrate is a silicon substrate which is not subjected to ion implantation treatment, and the thickness measured in the step S300 is the thickness of the silicon dioxide oxide layer which grows in situ in the thermal oxidation treatment process. The temperature field is directly inverted by measuring the thickness distribution, so that the monitoring deviation caused by the fluctuation of the injection process is fundamentally eliminated, the monitoring cost is effectively reduced, and the silicon wafer can be repeatedly used.

A high-formability hot galvanized aluminum-zinc or hot galvanized aluminum-magnesium dual-phase steel having a tensile strength of ≥590 MPa and a rapid heat treatment hot dipping fabrication method, the steel comprising the following components in mass percentage: C: 0.045-0.12%; Si: 0.1-0.5%; Mn: 1.0-2.0%; P: ≤0.02%; S: ≤0.006%; and Al: 0.02-0.055%. The steel may also contain one or two among Cr, Mo, Ti, Nb, and V, wherein the Cr+Mo+Ti+Nb+V≤0.5%, and the remainder is Fe and other inevitable impurities. The present invention changes the recovery of a deformed structure, ferrite recrystallization and austenite transformation processes during annealing by means of rapid heat treatment, and the nucleation point of a crystal is increased, grain growth time is shortened, the strength and formability (n90 value) of the material is improved while heat treatment efficiency is improved, which thus extends the performance range of the material.

The invention discloses a semiconductor chip virtual production line simulation system, which comprises an equipment module and a process module, and is characterized in that the equipment module comprises an etching module, a deposition module, a gluing module, a photoetching module, a cleaning module, a photoresist removing module, an ion implantation module, a rapid heat treatment module, a thermal oxidation module and a CMP module; the process module comprises a selection module, a detail module, a parameter filling module and a display module, the equipment module comprises all process modules, the equipment module simulates complete production simulation of a semiconductor chip, and the process module is used for teaching practice; the etching module carries out modeling simulation on an etching process by introducing plasma density, frequency, Debye length, Poisson equation potential distribution models and the like, and the simulation reduction capability of the models is enhanced in a correction term compensation mode; and the deposition module performs modeling on the deposition behavior, introduces a correction term to compensate non-ideal factors, improves the adaptability of the model to a non-ideal process environment, and presents the production effect of the wafer under different process parameters.

This application relates to a semiconductor device and a method for manufacturing the same, comprising: providing a substrate; forming a sacrificial layer on the substrate covering non-silicide regions and exposing silicide regions; forming a metal material layer on the substrate within the silicide regions, the metal material layer extending and covering the sacrificial layer, and the metal element of the metal material layer including at least platinum metal; subjecting the metal material layer to rapid thermal processing to form a metal silicide layer; performing a first wet etching process using an SPM solution to remove at least a portion of the metal material layer covering the sacrificial layer; performing a second wet etching process using a phosphoric acid solution to remove a portion of the sacrificial layer, thereby increasing the contact area between the sacrificial layer and the remaining metal material layer; and performing a third wet etching process using a mixed solution of an APM solution and an anionic surfactant to remove the remaining metal material layer. This application improves the efficiency and effectiveness of wet etching processes in removing metal material layers and reduces the risk of residual metal material layers within the semiconductor device.

A method of cleaning a process chamber is provided including supplying a plasma from a remote plasma source to an interior volume of a rapid thermal processing chamber during a first time period, the rapid thermal processing chamber including a plurality of lamps configured to heat an interior volume of the rapid thermal processing chamber; and providing heat from the plurality of lamps to heat the interior volume of the rapid thermal processing chamber during the first time period when the plasma from the remote plasma source is provided to the interior volume of the rapid thermal processing chamber.