45 results about "Rapid thermal processing" patented technology

The invention discloses a method for growing a low-surface-defect epitaxial wafer on a heavily-doped silicon substrate and the epitaxial wafer, and belongs to the field of semiconductor material preparation. The method comprises the following steps: carrying out rapid heat treatment on a heavily doped silicon substrate of which the resistivity is not greater than 1.15 m omega.cm in an inert atmosphere at the treatment temperature of 1000-1500 DEG C and the heating / cooling rate of 10-120 DEG C / s, and keeping the high temperature for 30-120 seconds; then HCl gas phase polishing is carried out at the temperature of 650-1250 DEG C, and mixed gas of HCl and hydrogen is introduced to remove a surface silicon layer by 50-150 nm; and finally growing an epitaxial layer. And the substrate can be subjected to particle detection and screening, and only the substrate with the specific pattern defect is subjected to the treatment. According to the method, through the synergistic effect of RTP and HCl polishing, in-vivo defect repairing and surface finishing are achieved, the number of LPDs, larger than or equal to 55 nm, on the surface of the epitaxial wafer is stably reduced to 10 or below, and the quality of the epitaxial wafer is remarkably improved.

The invention discloses a temperature control method, device and equipment for semiconductor equipment and a storage medium, and relates to the technical field of temperature control, and the method comprises the steps: calculating the equivalent radiation temperature of the brightness of a slit cavity observation band based on the brightness of the slit cavity observation band in an edge infrared observation annular region of a rapid heat treatment furnace and the surface emissivity of a wafer; solving the equivalent temperature of the inner edge of the quartz clock cover; on the basis of the equivalent radiation temperature and the equivalent temperature of the inner edge of the quartz clock cover, net radiation heat incoming power transmitted to a wafer edge belt of the wafer by an annular slit radiation cavity in the rapid heat treatment furnace is calculated; and solving a target lamp area power replacement vector of the rapid heat treatment furnace based on the net radiation heat incoming power. According to the invention, the initiative and accuracy of wafer edge temperature control can be improved.

The invention discloses a rotary air inlet device for rapid heat treatment equipment and a using method of the rotary air inlet device, and belongs to the technical field of semiconductor equipment manufacturing. The rotary air inlet device comprises an air inlet pipeline, an air outlet pipeline and a base, a cavity is formed in the base, and the air outlet pipeline is arranged above the cavity; a plurality of air inlet holes are evenly formed in the bottom of the air outlet pipeline in the axis direction, one ends of the air inlet holes are communicated with the air outlet pipeline, the other ends of the air inlet holes are communicated with the cavity, the bottom of the air outlet pipeline is located in the cavity, one end of the air outlet pipeline is communicated with an air outlet of the air inlet pipeline, and the air outlet pipeline is rotationally connected with the base. The gas inlet holes are formed in the bottom of the gas outlet pipeline to uniformly introduce process gas into the cavity, and the gas outlet pipeline is rotationally connected with the base, so that the included angle between the gas inlet holes in the bottom of the gas outlet pipeline and the vertical direction can be adjusted, the inlet angle of the process gas entering the cavity is controlled, and the gas flow rate in the cavity is controlled; and the effective regulation and control on the film thickness distribution are realized.

The application discloses a nanocrystalline soft magnetic alloy prepared by rapidly heat treating an amorphous precursor strip, wherein the amorphous precursor strip is composed of Fe a Si b B c P d Ni e Cu f M g , wherein a+b+c+d+e+f+g=100, M is one or two of Nb, Mo or Ta elements, 0

The application relates to the field of high-temperature alloy coating materials and post-processing technology, in particular to a laser cladding ceramic reinforced nickel-based high-temperature alloy coating heat treatment process and system. Through the heat treatment process combined with ultra-high temperature short-time treatment and integrated rapid air cooling, and the rapid heat treatment equipment with air cooling cavities and high-temperature cavities, the problems that the strength and plasticity of the laser cladding oxide ceramic dispersion strengthened nickel-based high-temperature alloy coating are difficult to coordinate, the organization regulation is not accurate, and the existing equipment cannot efficiently and stably realize the seamless connection of the high-temperature treatment and rapid cooling process are solved.

This invention discloses a method for preparing high sheet resistance shallow pn junction single-crystal silicon wafers based on rapid boron diffusion, comprising the following steps: S1: depositing a boron-containing precursor on the textured silicon wafer surface; S2: depositing a low-temperature oxide layer on the surface of the boron-containing precursor; S3: placing the silicon wafer with the deposited low-temperature oxide layer in a rapid thermal processing device, rapidly heating it to 1050-1350℃ at a heating rate of 5-200℃ / s, holding it at this temperature for 20-600s, and then rapidly cooling it to complete the diffusion and activation of boron atoms in the silicon wafer. This invention employs a combination of low-temperature deposition and rapid boron diffusion, which can significantly shorten the boron diffusion time, reduce energy consumption, and shorten the high-temperature processing time. It also suppresses the formation of oxygen precipitate defects at the source, eliminating problems such as black cores and black rings in batteries, and significantly improving carrier lifetime and material electrical performance.

The utility model discloses a heat treatment device for wear-resistant lining plate processing, which relates to the technical field of wear-resistant lining plate processing and comprises a platform and a high-frequency heating component, a stable guide rail is mounted at the top of the platform, stable pedestals are mounted on the surface of the stable guide rail in a bilateral symmetry manner, and a lifting component is vertically mounted at one end of the top of the platform. The high-frequency heating component is connected to one end of the lifting assembly. According to the heat treatment device for processing the wear-resistant lining plate, the high-frequency heating component is arranged and is connected with external power frequency alternating current supply equipment in a matched manner, and a magnetic field with the same frequency is converted through the high-frequency heating coil according to the electromagnetic induction principle and then acts on the wear-resistant lining plate in the magnetic field; in this way, rapid heat treatment of the wear-resistant lining plate can be achieved, meanwhile, the heating uniformity of the surface of the wear-resistant lining plate can be guaranteed through cooperation with the structural arrangement of the lifting assembly, and the heat treatment effect of the wear-resistant lining plate cannot be easily affected by the external environment.

A low carbon low alloy duplex steel and hot dip galvanized duplex steel with tensile strength ≥ 980MPa and their rapid heat treatment manufacturing method, the chemical composition of the steel is as follows in mass percent: C: 0.05-0.17%, Si: 0.1-0.7%, Mn: 1.4-2.8%, P ≤ 0.020%, S ≤ 0.005%, B ≤ 0.005%, Al: 0.02-0.055%, and may further contain two or more of Nb, Ti, Cr, Mo, and V, and Cr + Mo + Ti + Nb + V ≤ 1.1%, with the balance being Fe and other unavoidable impurities. The manufacturing method includes smelting, casting, hot rolling, cold rolling, and rapid heat treatment steps. By controlling the rapid heating, short-time holding time and rapid cooling processes in the rapid heat treatment process, the present invention changes the recovery of the deformed structure, recrystallization and austenite phase transformation processes, increases the nucleation rate, shortens the grain growth time, refines the grains, increases the strength of the material and expands the performance range of the material.

This invention discloses a rapid thermal treatment device, method, and application for silicon wafer surfaces based on LED light sources. The device includes an LED array light source module, a positioning mechanism, and a drive control unit. The LED array light source module emits light in the 350nm to 850nm wavelength range. The positioning mechanism maintains a working distance of 1-5cm between the emitting surface of the LED array light source module and the surface of the silicon wafer to be treated. The drive control unit is electrically connected to the LED array light source module, ensuring that the light power density irradiated onto the silicon wafer surface is greater than 5W / cm². This invention provides a rapid thermal treatment device, method, and application for silicon wafer surfaces based on LED light sources, reducing thermal damage to silicon wafers.

The invention discloses an electric heating repairing and strengthening method for a TC4 titanium alloy welded joint, which adopts a high-energy pulse current processing device to carry out short-time and rapid heat treatment on the specified TC4 titanium alloy welded joint by changing electric pulse parameters under the protection of inert gas so as to repair the defects of a welding fusion zone and improve the phenomena of coarse grains and the like in a heat affected zone. The method is simple, rapid, efficient and energy-saving, fixed-point heat treatment can be carried out on the designated area of the component, the mechanical property of the welding area can be improved and recovered, the strength and plasticity of the titanium alloy are improved at the same time, the strength is improved by 21-41 MPa, meanwhile, the plasticity is improved by 29%-55%, and the method has good application prospects.

The application relates to the technical field of piezoelectric materials, in particular to a lead zirconate titanate film and a low-temperature preparation method and application thereof, the preparation method comprising the following steps: Ti metal is taken as a radio frequency target material to perform first sputter deposition treatment on a substrate to form a Ti adhesion layer; a bottom electrode is formed on the Ti adhesion layer; Pb x Zr 0.52 Ti 0.48 O3 ceramic is taken as a radio frequency target material to perform second sputter deposition treatment on the bottom electrode, rapid heat treatment is performed, a PZT seed layer is formed; Pb x Zr 0.52 Ti 0.48 O3 ceramic is taken as a radio frequency target material to perform third sputter deposition treatment on the PZT seed layer, rapid heat treatment is performed, the step is repeated, and a lead zirconate titanate film is formed. In the process of sputter deposition of the PZT film material, the substrate tray is not additionally heated, the loss and volatilization of PbO are reduced, the film component stability can be effectively maintained; more crystal nuclei are provided by the PZT seed layer, the uniform crystallization of the PZT film is promoted, the crystallization quality and electrical properties of the PZT film are improved, the crystal boundary defects are reduced, and the adhesion and stability of the film and the substrate are enhanced.

The application provides a rapid heat treatment device for amorphous nanocrystalline magnetic cores, and relates to the technical field of heat treatment devices.The device comprises a heat treatment furnace, a fixed shell is fixedly installed at the lower end of the heat treatment furnace, a movable atmosphere structure is arranged on the inner side of the fixed shell, a rotating and oscillating integrated bearing structure is arranged on the movable atmosphere structure, and a self-adaptive adjustment structure is arranged on the rotating and oscillating integrated bearing structure.When the pressure in the heating cavity increases, one-way driving of the second single-acting cylinder drives the gate valve gate to descend and reduce the atmosphere delivery amount, and one-way driving of the first single-acting cylinder drives the sliding block to slide, thereby reducing the eccentric distance between the first ball head hinge and the second ball head hinge and reducing the oscillation amplitude, so that the atmosphere spraying amount and the oscillation amplitude can be automatically adjusted according to the internal pressure of the heating cavity, the problems of poor atmosphere flow and excessive oscillation damage to the surface gas film of the magnetic core under high pressure are avoided, and the stability of the amorphous nanocrystalline magnetic core heat treatment quality under different pressure working conditions is ensured.

The invention provides a rapid heat treatment device for an amorphous nanocrystalline magnetic core, and relates to the technical field of heat treatment devices.The rapid heat treatment device comprises a heat treatment furnace, a fixed shell is fixedly installed at the lower end of the heat treatment furnace, a movable atmosphere structure is arranged on the inner side of the fixed shell, and a rotation and oscillation integrated bearing structure is arranged on the movable atmosphere structure; the rotation and oscillation integrated bearing structure is provided with a self-adaptive adjusting structure, and through the arrangement of the self-adaptive adjusting structure, when the pressure of the heating cavity is increased, one path drives the second single-acting air cylinder to drive the gate valve to descend to reduce the atmosphere conveying amount, and the other path drives the first single-acting air cylinder to drive the sliding block to slide; the eccentric distance between the first ball hinge and the second ball hinge is reduced, and the oscillation amplitude is reduced, so that the atmosphere spraying amount and the oscillation amplitude can be automatically adjusted according to the internal pressure of the heating cavity, and the problem that an air film on the surface of a magnetic core is damaged due to unsmooth atmosphere flowing and excessive oscillation in a high-pressure state is solved; and the stability of the heat treatment quality of the amorphous nanocrystalline magnetic core under different pressure working conditions is ensured.

The invention provides a preparation method and application of a CdS / Sb2 (S, Se) 3 heterojunction, and relates to the technical field of photovoltaic materials. The preparation method of the CdS / Sb2 (S, Se) 3 heterojunction comprises the following steps: depositing CdCl2 on a CdS film, and carrying out first annealing to obtain a first film; depositing a Sb2 (S, Se) 3 absorption layer on the first thin film, and performing second annealing to obtain a CdS / Sb2 (S, Se) 3 heterojunction; and the second annealing is single-face annealing, specifically, annealing is directly conducted on a platform preheated to 350-400 DEG C for 10-20 min. According to the one-way rapid heat treatment (URTP) technology for preheating, the heating speed and the cooling speed are moderate, the annealing uniformity is improved, the process time of second annealing is shortened, a proper thermal gradient is formed, uniform crystallization of the Sb2 (S, Se) 3 thin film is effectively promoted, sufficient element migration time is guaranteed, the pinhole problem caused by rapid heating can be eliminated, and the yield of the CdS / Sb2 (S, Se) 3 thin film is improved. The interface quality of the Sb2 (S, Se) 3 heterojunction is improved, and the S and / or Se loss and defect density of the Sb2 (S, Se) 3 film are reduced.

In the present invention, a highly formable hot-dip aluminum galvanized or hot-dip zinc aluminum magnesium plated dual-phase steel having a tensile strength of ≥ 590MPa and a rapid heat treatment hot-dip manufacturing method are provided, in which the mass percentages of the components of the steel are as follows: C: 0.045-0.12%, Si: 0.1-0.5%, Mn: 1.0-2.0%, P ≤ 0.02%, S ≤ 0.006%, Al: 0.02-0.055%, and may further contain one or two of Cr, Mo, Ti, Nb, and V, and Cr+Mo+Ti+Nb+V ≤ 0.5%, with the balance being Fe and other unavoidable impurities. The present invention uses rapid heat treatment to change the recovery of deformation structure during the annealing process, the recrystallization of ferrite, and the phase transformation process of austenite, increase the number of crystal nucleation points, shorten the grain growth time, and increase the heat treatment efficiency, while at the same time improving the strength and formability (n 90 value) and widen the performance range of the material.

The invention discloses a cavity for rapid heat treatment equipment and a using method thereof, and belongs to the technical field of semiconductor equipment.The cavity for the rapid heat treatment equipment comprises a chamber and a base, the side wall of the chamber is provided with an air inlet cavity and a wafer conveying opening, the base is internally provided with an air inlet and uniformizing cavity, and the bottom of the cavity is provided with a plurality of air inlets; outlets of the plurality of air inlets are communicated with the air inlet uniformizing cavity, a plurality of air inlet uniformizing holes are uniformly formed between the air inlet uniformizing cavity and the air inlet cavity, exhaust ports are formed in the side wall of the wafer conveying port, and each exhaust port is communicated with an exhaust pipeline. According to the invention, air in the wafer conveying process is reduced by arranging the wafer conveying port, the air inlet, the air inlet uniformizing cavity and the air inlet uniformizing hole, the oxygen discharging efficiency is improved, and the capacity of the whole machine is improved; in addition, the exhaust port is arranged on the side of the wafer conveying port, so that the problem that the purging efficiency is reduced due to diffusion caused by air flowing through the cavity in the nitrogen purging process before the process is avoided, the nitrogen purging time is shortened, and the capacity of the whole machine is improved.

The invention provides a method for improving the quality of a gate oxide layer, and the method comprises the steps: providing a substrate, and forming a gate oxide layer on the substrate; performing ion implantation on the surface of the gate oxide layer, wherein the implanted ions are consistent with semiconductor elements contained in the material of the gate oxide layer; and carrying out rapid heat treatment on the gate oxide layer in an inert gas and oxygen atmosphere, so that ions injected into the gate oxide layer react with oxygen to improve the surface quality of the gate oxide layer. According to the method, ion implantation is carried out on the surface of the gate oxide layer, and rapid heat treatment is carried out in the inert gas and oxygen atmosphere, so that ions implanted on the surface of the gate oxide layer react with oxygen to form a more compact surface, and the surface quality of the gate oxide layer is improved.

To provide a method of manufacturing a semiconductor wafer of single crystal silicon which satisfies mechanical robustness without being hindered by an oxygen-induced stacking fault (OSF defect), and to provide a semiconductor wafer made of single crystal silicon.SOLUTION: A method for producing a semiconductor wafer of monocrystalline silicon includes growing a single crystal of silicon by the Czochralski (CZ) method, splitting at least one semiconductor wafer of monocrystalline silicon from the single crystal, and performing a first rapid thermal annealing (RTA), a second RTA treatment, and a third RTA treatment of the semiconductor wafer in this order.SELECTED DRAWING: Figure 1

The invention relates to a method for monitoring a temperature field of an RTP thermal annealing cavity. The method is characterized by comprising the following steps: S100, providing a silicon substrate; s200, placing the silicon substrate in a cavity of RTP equipment, and performing thermal oxidation treatment in an oxygen-containing atmosphere to enable a silicon dioxide oxide layer to grow on the surface of the silicon substrate; s300, measuring the thickness of the oxide layer at a plurality of preset positions on the surface of the silicon substrate; s400, determining the temperature field distribution of the RTP equipment cavity based on the thickness of the oxide layer at the plurality of preset positions; wherein the silicon substrate is a silicon substrate which is not subjected to ion implantation treatment, and the thickness measured in the step S300 is the thickness of the silicon dioxide oxide layer which grows in situ in the thermal oxidation treatment process. The temperature field is directly inverted by measuring the thickness distribution, so that the monitoring deviation caused by the fluctuation of the injection process is fundamentally eliminated, the monitoring cost is effectively reduced, and the silicon wafer can be repeatedly used.

A high-formability hot galvanized aluminum-zinc or hot galvanized aluminum-magnesium dual-phase steel having a tensile strength of ≥590 MPa and a rapid heat treatment hot dipping fabrication method, the steel comprising the following components in mass percentage: C: 0.045-0.12%; Si: 0.1-0.5%; Mn: 1.0-2.0%; P: ≤0.02%; S: ≤0.006%; and Al: 0.02-0.055%. The steel may also contain one or two among Cr, Mo, Ti, Nb, and V, wherein the Cr+Mo+Ti+Nb+V≤0.5%, and the remainder is Fe and other inevitable impurities. The present invention changes the recovery of a deformed structure, ferrite recrystallization and austenite transformation processes during annealing by means of rapid heat treatment, and the nucleation point of a crystal is increased, grain growth time is shortened, the strength and formability (n90 value) of the material is improved while heat treatment efficiency is improved, which thus extends the performance range of the material.

This application relates to a semiconductor device and a method for manufacturing the same, comprising: providing a substrate; forming a sacrificial layer on the substrate covering non-silicide regions and exposing silicide regions; forming a metal material layer on the substrate within the silicide regions, the metal material layer extending and covering the sacrificial layer, and the metal element of the metal material layer including at least platinum metal; subjecting the metal material layer to rapid thermal processing to form a metal silicide layer; performing a first wet etching process using an SPM solution to remove at least a portion of the metal material layer covering the sacrificial layer; performing a second wet etching process using a phosphoric acid solution to remove a portion of the sacrificial layer, thereby increasing the contact area between the sacrificial layer and the remaining metal material layer; and performing a third wet etching process using a mixed solution of an APM solution and an anionic surfactant to remove the remaining metal material layer. This application improves the efficiency and effectiveness of wet etching processes in removing metal material layers and reduces the risk of residual metal material layers within the semiconductor device.

A method of cleaning a process chamber is provided including supplying a plasma from a remote plasma source to an interior volume of a rapid thermal processing chamber during a first time period, the rapid thermal processing chamber including a plurality of lamps configured to heat an interior volume of the rapid thermal processing chamber; and providing heat from the plurality of lamps to heat the interior volume of the rapid thermal processing chamber during the first time period when the plasma from the remote plasma source is provided to the interior volume of the rapid thermal processing chamber.

Methods and apparatus for fabricating separators for solid-state lithium metal batteries employ rapid thermal processing. Aspects include high temperature sintering. Temperatures, durations of heat application, and proximity of heating elements to materials undergoing sintering combine to provide separators with desirable physical characteristics, including porosity, in a batch process.

The embodiment of the invention provides a rapid heat treatment chamber and a lamp panel device, and relates to the technical field of semiconductor equipment. The lamp panel device is used for the rapid heat treatment chamber and comprises a lamp panel body, a light source, a light source, a light source and a control device, and the lamp panel body is provided with two surfaces distributed at intervals in the thickness direction; a plurality of sunken parts are arranged in a preset area of at least one surface of the lamp panel body; wherein the at least two concave parts are distributed at intervals along at least one preset direction; and the functional coating coats a preset area of the lamp panel body.

Examples described herein generally relate to apparatus and methods for rapid thermal processing (RTP) of a substrate. The present disclosure discloses pulsed radiation sources used to measure a broad range of low to high temperatures in the RTP chamber, each at a discrete wavelength, are used at a low temperature regime before using one laser at a discrete wavelength for higher temperatures. In another example, a single laser is used for both the low temperature regime and higher temperatures. These methods are useful for detection of a broad range of low to high temperatures in the RTP chamber with varying substrate types.

The application discloses a temperature control method and device of a semiconductor device, equipment and a storage medium, and relates to the technical field of temperature control, and comprises the following steps: based on the slit cavity observation band brightness of the edge infrared observation annular area of a rapid thermal processing furnace and the surface emissivity of a wafer, the equivalent radiation temperature of the slit cavity observation band brightness is calculated; the equivalent temperature of the inner edge of a quartz bell jar is solved; based on the equivalent radiation temperature and the equivalent temperature of the inner edge of the quartz bell jar, the net radiation incident heat power transmitted from the annular slit radiation cavity of the rapid thermal processing furnace to the wafer edge band of the wafer is calculated; and based on the net radiation incident heat power, the target lamp area power replacement vector of the rapid thermal processing furnace is solved. The application can improve the initiative and accuracy of wafer edge temperature control.

A processing chamber, comprising a chamber body, a reflector plate, a base plate, and a cover. The chamber body comprises an interior volume. The reflector plate is disposed within the interior volume of the chamber body. The base plate is disposed within the interior volume of the chamber body and below the reflector plate. The cover encloses the reflector plate and the base plate and isolates the reflector plate and base plate from a remainder of the interior volume of the chamber body.

The invention discloses a step-by-step rapid heat treatment method for enhancing nonlinear response of a magnetostrictive / piezoelectric composite material. According to the method, the crystal structure of the magnetostriction layer is regulated and controlled by accurately controlling temperature and time parameters, so that the magnetoelectric coupling performance of the composite material is improved. The method comprises the following key steps of vacuum sealing, ultrafast heating, short-time heat preservation and step-by-step fast cooling. Through the step-by-step type rapid heat treatment method, the nonlinear magnetostriction response and the magnetoelectric coupling coefficient can be remarkably enhanced (the nonlinear magnetostriction response and the magnetoelectric coupling coefficient can be improved by 417.74% and 90.06% respectively). The method is efficient and controllable, and can be applied to high-performance magnetoelectric sensors and energy acquisition devices.

The application provides a boron diffusion preparation method, which comprises the following steps: (1) after the texturing of a silicon wafer, the silicon wafer is subjected to surface oxidation in a diffusion device by introducing O2; then small N2 carrying a boron source is introduced into the diffusion device to react with O2, and large N2 is introduced to transport the boron source and O2 to the surface of the silicon wafer, so that BSG pre-deposition is carried out on the surface of the silicon wafer; after the completion, the flow rates of O2, small N2 and large N2 are adjusted, and BSG deposition and promotion are continuously carried out on the surface of the silicon wafer; after the completion, the silicon wafer in the diffusion device is purged; (2) the silicon wafer after the completion of the purging is transferred to a chain oxidation device to perform rapid heat treatment under a protective atmosphere, and boron diffusion is completed after the removal of the back BSG layer; the method rapidly completes BSG deposition and short-time pre-promotion in a tube diffusion device, and further completes the promotion by means of a rapid heat treatment device, so that the uniformity of the silicon wafer is ensured, the boron diffusion preparation time is greatly saved, and the production efficiency is improved.

The invention relates to a preparation method of a double-layer composite electrode for a zero-excess lithium metal battery. The double-layer composite electrode is obtained by heating and rolling a reduced graphene oxide modified film prepared by a thermal reduction method and a double-phase magnesium-lithium alloy foil. The graphene oxide and the commercial magnesium-lithium alloy serve as main raw materials, a simple and convenient rapid heat treatment and equal-thickness rolling method is adopted, the raw material cost is low, the preparation process is simple and convenient, and meanwhile the prepared self-supporting double-layer composite electrode shows the good capacity retention rate.