129 results about "Rapid thermal processing" patented technology

The invention provides an all-solid-state battery three-dimensional electrode preparation method based on aerosol jet printing, and the method comprises the following steps: constructing a three-dimensional porous frame by using a conductive skeleton material through an aerosol jet printing technology; depositing an active material and a solid electrolyte on the surface of the frame layer by layer to form a gradient distribution layer; generating an interface transition layer by adopting ultraviolet curing or rapid heat treatment; and in combination with a closed-loop feedback control system, deposition parameters are dynamically adjusted. A conductive active material and a solid electrolyte are uniformly distributed on the surface of a three-dimensional porous framework in a layer-by-layer deposition manner through an aerosol jet printing method, and the solid electrolyte and an electrode material form a close contact interface by accurately controlling a jet path, a nozzle diameter and a material deposition rate; the interface side reaction easily caused by traditional high-temperature sintering is eliminated, and the interface impedance is reduced; and furthermore, the transmission efficiency of the lithium ions at the interface is improved through an ultraviolet curing or rapid heat treatment process.

The invention discloses a method for growing a low-surface-defect epitaxial wafer on a heavily-doped silicon substrate and the epitaxial wafer, and belongs to the field of semiconductor material preparation. The method comprises the following steps: carrying out rapid heat treatment on a heavily doped silicon substrate of which the resistivity is not greater than 1.15 m omega.cm in an inert atmosphere at the treatment temperature of 1000-1500 DEG C and the heating / cooling rate of 10-120 DEG C / s, and keeping the high temperature for 30-120 seconds; then HCl gas phase polishing is carried out at the temperature of 650-1250 DEG C, and mixed gas of HCl and hydrogen is introduced to remove a surface silicon layer by 50-150 nm; and finally growing an epitaxial layer. And the substrate can be subjected to particle detection and screening, and only the substrate with the specific pattern defect is subjected to the treatment. According to the method, through the synergistic effect of RTP and HCl polishing, in-vivo defect repairing and surface finishing are achieved, the number of LPDs, larger than or equal to 55 nm, on the surface of the epitaxial wafer is stably reduced to 10 or below, and the quality of the epitaxial wafer is remarkably improved.

The utility model provides a silicon wafer carrier, a cooling chamber and semiconductor process equipment, the carrier comprises a metal bearing platform with a supporting surface, and a ceramic protruding piece which extends upwards out of the supporting surface and is used for supporting a silicon wafer is fixedly embedded in the metal bearing platform. When the silicon wafer subjected to rapid heat treatment is transmitted to the ceramic convex piece, the heat conduction coefficient of the ceramic convex piece is greatly reduced relative to the heat conduction coefficient of the metal bearing table, so that the heat conduction efficiency between the silicon wafer and the ceramic convex piece is reduced, and the problem of silicon wafer cracking caused by sudden drop of the single-point temperature of the silicon wafer is further avoided.

The invention discloses a rapid annealing heat treatment method for optimizing contact between p-GaN and ITO (Indium Tin Oxide) in a Micro-LED (Light Emitting Diode) device. According to the method, rapid heat treatment (RTP) is carried out in a specific atmosphere, and annealing is carried out at 550 DEG C for 1 minute and 5 minutes respectively, so that the contact performance between p-GaN and ITO is improved. Experimental results show that the current density of a single Micro-LED pixel reaches 0.4624 A / cm < 2 > and the light transmittance is 80.33% when annealing is carried out for 1 minute in an O2 atmosphere. Under the optimized RTP annealing condition, the forward turn-on voltage of a single pixel of the blue light Micro-LED is about 3V, the peak value of the emission wavelength is 449.87 nm, the dominant wavelength is 455.11 nm, and the half width is 17.75 nm. The side wall of a single pixel shows a good appearance after RTP optimization, and no ITO chippings are attached, which indicates that the method effectively reduces the problems of side wall damage and electric leakage channel caused by ITO etching.

The invention relates to the technical field of wafer heat treatment, in particular to wafer rapid heat treatment equipment which comprises a heat treatment equipment body, the side face of the heat treatment equipment body is concaved inwards to form a machining cavity, and the upper end of the machining cavity of the heat treatment equipment body is concaved upwards to form a circular cavity. A circular cavity is formed in the feeding area, a heating cover is installed in the circular cavity in an up-down sliding mode, a first tension spring is fixedly connected to the upper end of the heating cover, the upper end of the first tension spring is fixedly connected with the upper end of an inner cavity of the circular cavity, and a heating assembly is fixedly installed at the upper end of an inner cavity of the heating cover. A bearing disc with a wafer body is clamped into a placement groove of a placement table, an output shaft of a stepping motor rotates by a quarter of a circle, a rotary circular table drives the bearing disc and the wafer body to rotate by the quarter of the circle through the placement table, and the bearing disc with the wafer body rotates from a feeding area to a heat treatment area.

The invention provides a reaction chamber and rapid heat treatment equipment, the reaction chamber comprises a chamber main body, an air inlet device and an air exhaust device, and the side wall of the chamber main body is provided with a wafer conveying port and a pump port opposite to the wafer conveying port; the gas inlet device is arranged at the pump opening and is communicated with an external gas source so as to provide process gas to the interior of the cavity main body; and the exhaust device is arranged at the wafer conveying opening and is used for exhausting gas in the chamber main body out of the chamber main body. Process gas enters the chamber main body from the gas inlet device and is exhausted from the gas exhaust device, the wafer is conveyed into the chamber main body from the wafer conveying opening, at the moment, the wafer conveying opening is opened, air enters the chamber main body along with the wafer, the process gas entering from the gas inlet device and the air entering from the wafer conveying opening are headed, and the process gas enters the chamber main body. Therefore, air is prevented from entering the chamber main body in the wafer transfer process, the oxygen content in the chamber main body is reduced, the later oxygen removal and analysis time is shortened, and the wafer productivity is improved.

The invention discloses a temperature control method, device and equipment for semiconductor equipment and a storage medium, and relates to the technical field of temperature control, and the method comprises the steps: calculating the equivalent radiation temperature of the brightness of a slit cavity observation band based on the brightness of the slit cavity observation band in an edge infrared observation annular region of a rapid heat treatment furnace and the surface emissivity of a wafer; solving the equivalent temperature of the inner edge of the quartz clock cover; on the basis of the equivalent radiation temperature and the equivalent temperature of the inner edge of the quartz clock cover, net radiation heat incoming power transmitted to a wafer edge belt of the wafer by an annular slit radiation cavity in the rapid heat treatment furnace is calculated; and solving a target lamp area power replacement vector of the rapid heat treatment furnace based on the net radiation heat incoming power. According to the invention, the initiative and accuracy of wafer edge temperature control can be improved.

A silicon crystal, a silicon crystal defect treatment method, and a defect characterization method. The silicon crystal defect treatment method comprises: providing a silicon crystal, wherein the silicon crystal includes self-interstitial defects; and executing a rapid heat treatment process on the silicon crystal, so as to at least eliminate self-interstitial defects within a preset distance from a surface of the silicon crystal. By means of executing a rapid heat treatment process on a silicon crystal, self-interstitial defects in the silicon crystal can be quickly and effectively reduced or even completely eliminated.

The utility model provides a wafer heating and bearing device, and solves the technical problem that the temperature is not uniform when a wafer is heated in an RTP process. The heating bearing device comprises a rotary table, a wafer bearing table, a base, an edge ring loader and an edge ring. The heating bearing device is sequentially provided with the rotary table, the wafer bearing table, the base, the edge ring loader and the edge ring from bottom to top. The wafer bearing table is located in the base, a baffle ring is arranged on the inner side, close to the wafer bearing table, of the edge ring in the vertical direction, the two ends of the baffle ring extend to the upper side and the lower side of the edge ring respectively, and the two ends of the baffle ring are bent towards one side of the wafer bearing table. The utility model also discloses wafer rapid heat treatment equipment. According to the utility model, the irradiation of the outer ring of the wafer is more uniform, and the temperature uniformity of the wafer is ensured.

The invention relates to the technical field of semiconductor processing, in particular to an oxidation induced fault suppression system for a monocrystalline silicon rapid heat treatment process, comprising: an RTP reaction chamber having an outer reaction chamber and a quartz reaction chamber arranged therein; the heating unit is provided with an upper heating unit and a lower heating unit which are respectively positioned at the top and the bottom of the quartz reaction cavity; the gas path structure is provided with an upper-layer process gas pipeline and a lower-layer process gas pipeline which are connected to the interior of the quartz reaction cavity, high-purity argon is introduced into the upper layer, nitrogen-hydrogen mixed gas is injected into the lower layer, and oxygen readsorption is inhibited through gas layering; the in-situ monitoring module is arranged on the lower side of the quartz reaction cavity and is used for monitoring the crystal temperature gradient and the oxygen precipitation density.

The invention discloses a structure for improving the stability of a rapid heat treatment process, and belongs to the technical field of semiconductor process equipment, rapid heat treatment equipment comprises an edge ring and a support ring, and the edge ring is flatly placed on the support ring; the middle of the edge ring is provided with a placing groove used for placing a wafer, the outer side of the edge ring is provided with an outer ring structure extending downwards, the edge ring is further provided with an inner ring structure between the outer ring structure and the placing groove, an annular groove is formed between the inner ring structure and the outer ring structure, an opening of the annular groove faces downwards, and the top of the supporting ring is located in the annular groove. The inner ring structure plays a role in fixing and supporting, even if the edge ring and the supporting ring are heated to deform, the gap between the edge ring and the supporting ring can still be ensured not to be too large or not to be uniform, and then the wafer can still be stably and firmly lapped on the edge ring, so that the wafer quality is improved. The problem that the process is unstable due to the fact that the deviated edge of the wafer makes contact with the edge ring is solved, it is guaranteed that the wafer is heated evenly, and the process stability of the rapid heat treatment equipment is improved.

The invention discloses a rotary air inlet device for rapid heat treatment equipment and a using method of the rotary air inlet device, and belongs to the technical field of semiconductor equipment manufacturing. The rotary air inlet device comprises an air inlet pipeline, an air outlet pipeline and a base, a cavity is formed in the base, and the air outlet pipeline is arranged above the cavity; a plurality of air inlet holes are evenly formed in the bottom of the air outlet pipeline in the axis direction, one ends of the air inlet holes are communicated with the air outlet pipeline, the other ends of the air inlet holes are communicated with the cavity, the bottom of the air outlet pipeline is located in the cavity, one end of the air outlet pipeline is communicated with an air outlet of the air inlet pipeline, and the air outlet pipeline is rotationally connected with the base. The gas inlet holes are formed in the bottom of the gas outlet pipeline to uniformly introduce process gas into the cavity, and the gas outlet pipeline is rotationally connected with the base, so that the included angle between the gas inlet holes in the bottom of the gas outlet pipeline and the vertical direction can be adjusted, the inlet angle of the process gas entering the cavity is controlled, and the gas flow rate in the cavity is controlled; and the effective regulation and control on the film thickness distribution are realized.

Embodiments disclosed herein include a method of monitoring a condition of a chamber. In an embodiment, the method comprises processing a substrate in the chamber, providing substrate history and chamber data to a model of the chamber, where the model of the chamber is configured to predict a chamber cleanliness, comparing the predicted chamber cleanliness against a performance limit, and flagging the chamber for preventive maintenance (PM) when the predicted chamber cleanliness is above the performance limit.

The invention relates to the field of semiconductor packaging materials, in particular to a high gold bonding alloy wire and a production process and application thereof, and the production process comprises the following steps: smelting and quickly solidifying raw materials with the purity being greater than or equal to 99.999% to prepare a gold alloy ingot with the gold content being greater than or equal to 99.99%; carrying out hot working and multi-pass cold drawing on the gold alloy cast ingot, and carrying out intermediate annealing during cold drawing to obtain an intermediate wire with the diameter of 50-200 microns; plastic twisting deformation is applied to the middle wire, and the twisting deformation degree ranges from 30 circles per meter to 120 circles per meter; the intermediate wire subjected to twisting deformation is subjected to rapid heat treatment, the heat treatment temperature ranges from 350 DEG C to 550 DEG C, the heat treatment time ranges from 2 s to 8 s, and then rapid cooling is conducted; and precisely drawing the wire material subjected to heat treatment to obtain a final finished product with the diameter of 15-33 microns. Through coordination of the components and the process, the problem of sliding balls or pseudo soldering defects is solved, and a high-strength and low-radian product is obtained.

1. The name of the product of this design: Wafer rapid thermal processing host. 2. Purpose of this design product: This design product is used for rapid heat treatment of wafers. 3. The design key point of this appearance design product lies in the shape. 4. The picture or photo that best illustrates the design points: three-dimensional picture.

The invention relates to a method for producing partially reacted silicon for the control of the lithium intercalation capacity, for use in lithium batteries, wherein a first silicon layer is deposited on a substrate, the first silicon layer subsequently being subjected to rapid thermal processing. The invention also relates to an anode thereby produced. The problem addressed by the present invention of specifying a method that allows control of the capacity of ion intercalation into functional layers for battery production is solved in that a layer of silicon, metal and / or another material is applied as a diffusion barrier, which is subjected to subsequent rapid thermal processing, and partially reacted silicon is formed. (The structure of the diffusion barrier makes the diffusion barrier permeable to lithium.)

The application discloses a nanocrystalline soft magnetic alloy prepared by rapidly heat treating an amorphous precursor strip, wherein the amorphous precursor strip is composed of Fe a Si b B c P d Ni e Cu f M g , wherein a+b+c+d+e+f+g=100, M is one or two of Nb, Mo or Ta elements, 0

The invention discloses an ultra-fast degreased and sintered dental restoration based on a photocuring technology and a preparation method thereof, and relates to the technical field of photocuring dental glass ceramic manufacturing. According to the preparation method of the dental restoration based on the ultra-fast degreasing and sintering of the photocuring technology, the photocrosslinking compound and the thermal crosslinking compound are simultaneously introduced into the slurry system, and the low-molecular-weight solvent and the ceramic powder with high solid content are matched, so that a green body structure capable of keeping integrity under the condition of fast heat treatment is effectively constructed. By combining Joule heating ultra-fast high-temperature sintering equipment, the green body can cross a critical temperature interval in which the green body is easy to crack in an extremely short time, meanwhile, structural relaxation and defect accumulation which are possibly generated in a slow heating process are inhibited, and the microstructure uniformity and reliability of the glass ceramic material in a fast densification and crystallization process are ensured. According to the invention, ultra-fast degreasing and sintering of the dental ceramic material are realized.

The present invention discloses a heat treatment chamber and heat treatment equipment, which relate to the field of semiconductor processing technology. The heat treatment chamber includes: a shell assembly, which is provided with a process chamber; a heating assembly, which includes a plurality of heaters located on one side of the process chamber and arranged along a first direction and a plurality of heaters located on the other side of the process chamber and arranged along a second direction, wherein the first direction and the second direction are in a spatial vertical relationship; a first cooling assembly, which includes a cooling water channel, which is arranged in the shell assembly and surrounds the process chamber; and a second cooling assembly, which includes a cooling air duct, a part of which is located at the heater. The heat treatment chamber and the heat treatment equipment have high temperature uniformity and high airflow uniformity, which can avoid equipment damage caused by overheating of the cavity wall and overheating of the lamp tube, increase the service life of the equipment and production safety, and can simultaneously meet the strict requirements of the rapid heat treatment process.

Embodiments of a lamp housing for a processing chamber are provided herein. In some embodiments, a lamp housing for a processing chamber includes: a first plate having a plurality of first openings; the copper plate is provided with a plurality of second openings; a plurality of tubes, the plurality of tubes being welded to the first plate at a first end of the plurality of tubes by a welding alloy, and the plurality of tubes being welded to the copper plate at a second end of the plurality of tubes by the welding alloy, wherein the plurality of tubes have a central opening aligned with the plurality of first openings and the plurality of second openings, and wherein the welding alloy comprises a nickel-containing alloy or a copper-containing alloy wherein the copper-containing alloy does not comprise gold; and an annular sheath surrounding the plurality of tubes and welded to the first plate by the welding alloy.

The application relates to the field of high-temperature alloy coating materials and post-processing technology, in particular to a laser cladding ceramic reinforced nickel-based high-temperature alloy coating heat treatment process and system. Through the heat treatment process combined with ultra-high temperature short-time treatment and integrated rapid air cooling, and the rapid heat treatment equipment with air cooling cavities and high-temperature cavities, the problems that the strength and plasticity of the laser cladding oxide ceramic dispersion strengthened nickel-based high-temperature alloy coating are difficult to coordinate, the organization regulation is not accurate, and the existing equipment cannot efficiently and stably realize the seamless connection of the high-temperature treatment and rapid cooling process are solved.

The present invention discloses an anti-interference detection method for a wafer temperature measurement system, which belongs to the field of semiconductor rapid thermal processing technology. The anti-interference detection method includes the following steps: a temperature sensor detects the temperature of a wafer, an original sample value obtained by the temperature sensor is first subjected to noise interference filtering processing by a temperature detector, and then the processed data is sent to a temperature controller as the detected temperature of the wafer. The temperature controller compares the detected temperature with the formula set temperature, and then adjusts the output power to form a closed-loop control; the noise interference filtering processing includes: the original sample value obtained by the temperature sensor is first subjected to data verification, the verified data is subjected to de-extreme value filtering, and then a noise estimation algorithm is used to perform real-time estimation and identify steady-state noise. The steady-state noise is removed to obtain the actual temperature of the wafer. The present invention adopts de-extreme value filtering in terms of random disturbance and adopts a noise estimation method in terms of stable sinusoidal disturbance, significantly improving the accuracy of temperature measurement.

The invention provides a manufacturing method of a cobalt silicide and a manufacturing method of a semiconductor device, and the method comprises the steps: carrying out the rapid heat treatment of a silicon substrate deposited with metal cobalt at a first temperature, removing unreacted cobalt, carrying out the rapid heat treatment at a second temperature, and then depositing at least one dielectric material layer, and first laser peak annealing is carried out on any proper node after deposition of partial or all dielectric material layers is completed, so that de-crystallization points in the cobalt silicide are re-activated and crystallized, and therefore, under the condition that the influence on the original device manufacturing process is small, the performance of the device can be improved. The performance of the device is improved by adding one or more first laser spike annealing.

The invention provides a temperature determination method of a rapid heat treatment machine. The method comprises the following steps: acquiring an initial detection substrate obtained by generating a silicon nitride layer on a silicon substrate; determining a relational expression used for describing the temperature of the rapid heat treatment machine and the etching rate of the silicon nitride layer; the initial detection substrate is conveyed to a to-be-detected rapid heat treatment machine table with the display temperature being the preset machine table temperature, rapid heat treatment is conducted on the initial detection substrate according to the preset heat treatment condition, and a first detection thickness value, obtained after rapid heat treatment, of the first detection substrate is measured; performing hydrofluoric acid etching on the first detection substrate for a preset time period, and measuring a second detection thickness value of a second detection substrate obtained after etching; determining the actual etching rate of the silicon nitride layer of the initial detection substrate according to the first detection thickness value, the second detection thickness value and a preset time period; and determining the actual machine temperature corresponding to the actual etching rate according to the actual etching rate and the relational expression.

This invention discloses a method for preparing high sheet resistance shallow pn junction single-crystal silicon wafers based on rapid boron diffusion, comprising the following steps: S1: depositing a boron-containing precursor on the textured silicon wafer surface; S2: depositing a low-temperature oxide layer on the surface of the boron-containing precursor; S3: placing the silicon wafer with the deposited low-temperature oxide layer in a rapid thermal processing device, rapidly heating it to 1050-1350℃ at a heating rate of 5-200℃ / s, holding it at this temperature for 20-600s, and then rapidly cooling it to complete the diffusion and activation of boron atoms in the silicon wafer. This invention employs a combination of low-temperature deposition and rapid boron diffusion, which can significantly shorten the boron diffusion time, reduce energy consumption, and shorten the high-temperature processing time. It also suppresses the formation of oxygen precipitate defects at the source, eliminating problems such as black cores and black rings in batteries, and significantly improving carrier lifetime and material electrical performance.

The utility model discloses a heat treatment device for wear-resistant lining plate processing, which relates to the technical field of wear-resistant lining plate processing and comprises a platform and a high-frequency heating component, a stable guide rail is mounted at the top of the platform, stable pedestals are mounted on the surface of the stable guide rail in a bilateral symmetry manner, and a lifting component is vertically mounted at one end of the top of the platform. The high-frequency heating component is connected to one end of the lifting assembly. According to the heat treatment device for processing the wear-resistant lining plate, the high-frequency heating component is arranged and is connected with external power frequency alternating current supply equipment in a matched manner, and a magnetic field with the same frequency is converted through the high-frequency heating coil according to the electromagnetic induction principle and then acts on the wear-resistant lining plate in the magnetic field; in this way, rapid heat treatment of the wear-resistant lining plate can be achieved, meanwhile, the heating uniformity of the surface of the wear-resistant lining plate can be guaranteed through cooperation with the structural arrangement of the lifting assembly, and the heat treatment effect of the wear-resistant lining plate cannot be easily affected by the external environment.

A low carbon low alloy duplex steel and hot dip galvanized duplex steel with tensile strength ≥ 980MPa and their rapid heat treatment manufacturing method, the chemical composition of the steel is as follows in mass percent: C: 0.05-0.17%, Si: 0.1-0.7%, Mn: 1.4-2.8%, P ≤ 0.020%, S ≤ 0.005%, B ≤ 0.005%, Al: 0.02-0.055%, and may further contain two or more of Nb, Ti, Cr, Mo, and V, and Cr + Mo + Ti + Nb + V ≤ 1.1%, with the balance being Fe and other unavoidable impurities. The manufacturing method includes smelting, casting, hot rolling, cold rolling, and rapid heat treatment steps. By controlling the rapid heating, short-time holding time and rapid cooling processes in the rapid heat treatment process, the present invention changes the recovery of the deformed structure, recrystallization and austenite phase transformation processes, increases the nucleation rate, shortens the grain growth time, refines the grains, increases the strength of the material and expands the performance range of the material.

The invention discloses a method for improving overlay precision by optimizing wafer edge voltage, and belongs to the technical field of semiconductor manufacturing, and the method for improving the overlay precision by optimizing the wafer edge voltage comprises the following steps: carrying out heat treatment on a wafer by using rapid heat treatment equipment before a photoetching process is carried out; a heating device for heating the wafer is arranged in the rapid heat treatment equipment, the position of the wafer in the rapid heat treatment equipment is opposite to the heating device, and the size of the heating device is larger than that of the wafer; the heating device is provided with a plurality of heating areas, and each heating area is provided with at least one heating lamp. According to the method, the relation between the voltage of the secondary outer ring and the voltage of the inner ring is influenced by changing the voltage of the outermost ring of the wafer, that is, the effect that the thermal field is distributed progressively is achieved, then the internal stress borne by the wafer in the front-layer process is fully released, and the OVL problem after the photoetching process is solved.

This invention discloses a rapid thermal treatment device, method, and application for silicon wafer surfaces based on LED light sources. The device includes an LED array light source module, a positioning mechanism, and a drive control unit. The LED array light source module emits light in the 350nm to 850nm wavelength range. The positioning mechanism maintains a working distance of 1-5cm between the emitting surface of the LED array light source module and the surface of the silicon wafer to be treated. The drive control unit is electrically connected to the LED array light source module, ensuring that the light power density irradiated onto the silicon wafer surface is greater than 5W / cm². This invention provides a rapid thermal treatment device, method, and application for silicon wafer surfaces based on LED light sources, reducing thermal damage to silicon wafers.

The invention discloses an electric heating repairing and strengthening method for a TC4 titanium alloy welded joint, which adopts a high-energy pulse current processing device to carry out short-time and rapid heat treatment on the specified TC4 titanium alloy welded joint by changing electric pulse parameters under the protection of inert gas so as to repair the defects of a welding fusion zone and improve the phenomena of coarse grains and the like in a heat affected zone. The method is simple, rapid, efficient and energy-saving, fixed-point heat treatment can be carried out on the designated area of the component, the mechanical property of the welding area can be improved and recovered, the strength and plasticity of the titanium alloy are improved at the same time, the strength is improved by 21-41 MPa, meanwhile, the plasticity is improved by 29%-55%, and the method has good application prospects.