193 results about "Ferroelectric thin films" patented technology

The present disclosure relates to a ferroelectric thin film transistor and may include: a substrate; a gate electrode layer formed on the substrate; a ferroelectric layer formed on the gate electrode layer, including a hafnium-based oxide, and including an uneven portion having at least one or more step that is formed on the gate electrode layer; a semiconductor channel layer formed on the ferroelectric layer and including an oxide semiconductor; a drain electrode layer connected to the semiconductor channel layer at one side of the gate electrode layer; and a source electrode layer connected to the semiconductor channel layer at the other side of the gate electrode layer.

The invention provides a hafnium oxide-based ferroelectric film annealing process with a low thermal budget and a hafnium oxide-based ferroelectric film, and relates to the field of ferroelectric films, the hafnium oxide-based ferroelectric film is subjected to multiple low-temperature rapid annealing cycles, and the hafnium oxide-based ferroelectric film annealing process comprises the following steps: heating to an annealing temperature of 400 DEG C at a heating rate of 10-80K / s, keeping the temperature for 15-120s, and cooling at a cooling rate of not less than 10K / s, and after cooling to room temperature, carrying out next annealing cycle. The internal defect distribution of the thin film is changed through repeated rapid annealing circulation; and multiple times of rapid cooling are introduced, so that multiple times of enhanced stress is generated in the thin film, the hafnium oxide phase change potential barrier is cooperatively regulated and controlled, conversion from a non-ferroelectric high-temperature tetragonal phase to a ferroelectric orthogonal phase is promoted, and the requirement for the high annealing temperature is avoided.

The invention discloses a strontium-doped bismuth titanate-based ferroelectric film and a preparation method thereof, and belongs to the technical field of dielectric energy storage materials. The chemical composition of the film is Ba < 1-x > Sr < x > Bi < 4 > Ti < 4 > O < 15 >, wherein x ranges from 0.025 to 0.1. The preparation method comprises the following steps: mixing ethylene glycol monomethyl ether and ethylene glycol, adding bismuth nitrate, barium acetate, strontium acetate and butyl titanate, fully stirring and filtering to obtain a precursor solution, aging, dripping to the center of a substrate for spin coating, heating a spin-coated sample to obtain a dry film, and annealing to obtain the ferroelectric film. The method is low in technological condition requirement, and the thin film obtains the optimal energy storage density by changing the doping proportion of Sr. According to the ferroelectric film, when x is equal to 0.075, the leakage current density of Ba0. 925Sr0. 075Bi4Ti4O15 (BBST75) is only 1.59 * 10 <-7 > A / cm < 2 >, the breakdown field strength is as high as 3.22 MV / cm, and at the moment, the film has the energy storage density of 28.2 J / cm < 3 > and the energy storage efficiency of 80.36%.

The invention discloses a method for improving the performance of an HZO ferroelectric capacitor through plasma interface treatment. The method comprises the following steps: forming a TiN bottom electrode on a Si substrate material through deposition; zrO2 and HfO2 are deposited on the TiN bottom electrode through an atomic layer to form an HZO ferroelectric medium layer; performing plasma treatment on the upper surface of the HZO ferroelectric dielectric layer; after processing, a TiN top electrode is formed on the upper surface of the HZO ferroelectric dielectric layer through deposition; carrying out rapid thermal annealing treatment in an N2 atmosphere; according to the method, plasma is adopted to process the upper surface of the ferroelectric film, and the oxygen vacancy distribution uniformity of the upper surface of the HZO film can be optimized, so that the wake-up effect is inhibited, and the performance of the ferroelectric film is improved; plasma is adopted to process the upper surface of the ferroelectric film, and generation of oxygen vacancies on the upper surface of the HZO film can be inhibited, so that electric leakage is reduced, the fatigue effect and the imprinting effect are inhibited, and the performance of the ferroelectric film is improved.

The invention belongs to the field of microelectronics, and particularly relates to a ferroelectric capacitor, a preparation method thereof and a three-dimensional ferroelectric memory array, and the ferroelectric capacitor comprises a substrate, a bottom electrode, a ferroelectric dielectric layer, a deoxidizing layer and a top electrode which are sequentially arranged from bottom to top; the ferroelectric medium layer is an Hf < 1-x > Zr < x > O < 2 > layer, 0 lt; xlt; the Hf-rich composition is realized by controlling the Hf: Zr super-cycle ratio of atomic layer deposition; the thickness of the ferroelectric medium layer is 1-6 nm, and the thickness of the bottom electrode is 0.1-5 nm. Compared with the prior art, the problems of polarization characteristic degradation caused by thinning of the ferroelectric layer in the hafnium-based ferroelectric capacitor and crosstalk in the FeRAM in the prior art are solved. According to the scheme, the oxygen vacancy concentration is accurately adjusted to inhibit the formation of a non-ferroelectric phase, so that the ultra-thin ferroelectric film can still maintain relatively high remanent polarization while the size is reduced, a storage window is effectively improved, and the wake-up requirement is reduced.

The invention discloses a phase field simulation and analysis method for an anisotropic domain wall of a hafnium oxide-based ferroelectric film, and solves the problems that an existing method is difficult to reflect the influence of the anisotropy of the domain wall on domain evolution and polarization overturning dynamics and is associated with macroscopic electrical properties. Comprising the following steps: 1) determining a total energy equation and correlation coefficients; 2) establishing a gradient energy density equation based on domain wall anisotropy; 3) constructing and solving a control equation; 4) visualizing a simulation result; and 5) domain evolution and polarization flipping characteristics under different voltages are analyzed. According to the method, accurate simulation of the anisotropic domain wall and quantitative analysis of the migration behavior of the domain wall are realized, guidance is provided for experimenters to understand the influence rule of the anisotropic domain wall on the domain overturning characteristic and the macroscopic electrical property, the experiment cost is reduced, and the experiment efficiency is improved.

The invention belongs to the field of semiconductors, and discloses a novel ferroelectric memcapacitor based on an MFIS structure and a preparation method thereof, a substrate of the novel ferroelectric memcapacitor comprises a first doped region and a second doped region, and the doping type of the first doped region is p-type; the insulating layer, the ferroelectric layer and the top electrode layer are arranged on the substrate from bottom to top and cover the first doped region of the substrate; an uncovered area on the surface of the substrate is a second doped area, and the doping type of the second doped area is n type; the bottom electrode layer is located in the second doped region of the substrate and is far away from the first doped region; the channel is located in the second doped region of the substrate and is close to the first doped region; the invention also provides a corresponding preparation method, according to the ferroelectric memcapacitor prepared by using the method, because the semiconductor layer has a PN junction depletion region, the ferroelectric film can be fully overturned by using a band-to-band tunneling mechanism without large voltage, and meanwhile, the capacitance of the depletion region of the PN junction on one side of the semiconductor is adjusted, so that a relatively high capacitance-to-switch ratio is obtained while low power consumption is ensured.

The embodiment of the invention discloses a hafnium oxide-based ferroelectric film doped in a calcium gap position and a preparation method. The method comprises the following steps: preparing a target material: mixing hafnium oxide and calcium oxide according to a set ratio, and grinding to obtain mixed raw material powder; calcining the mixed raw material powder for the first time; grinding the mixed raw material powder calcined for the first time, and performing compression molding to obtain a target material biscuit; calcining the target material biscuit for the second time to obtain the hafnium oxide-based ceramic target material doped in the calcium gap position; a commercial bottom electrode La0. 7Sr0. 3MnO3 target material is used as a first sputtering target, sputtering is carried out under a first set condition, and an LSMO bottom electrode thin film is obtained; taking the calcium gap position doped hafnium oxide-based ceramic target material as a second sputtering target, sputtering under a second set condition, and epitaxially growing on the LSMO bottom electrode film to form a calcium gap position doped hafnium oxide-based ferroelectric film; the chemical composition of the hafnium oxide-based ferroelectric film doped in the calcium gap position is CaxHf (1-x) O (2-x), x is 0.01-0.05, and calcium ions occupy the gap position of a hafnium oxide crystal lattice.

The invention provides a method for recovering a hafnium oxide-based ferroelectric erasing and writing mark phenomenon, which relates to the field of ferroelectric films, and comprises the step of applying bipolar electric pulses or unipolar electric pulses with the polarization direction opposite to that of data erasing and writing electric pulses to a hafnium oxide-based ferroelectric film device which is subjected to data erasing and writing after the electric pulses are applied to the hafnium oxide-based ferroelectric film device. By means of the method, the imprint offset field caused by data erasing and writing can be effectively recovered.

This invention discloses an electrode-free constrained annealed hafnium oxide-based ferroelectric thin film, its preparation method, and its application. The method employs ALD technology to alternately deposit a predetermined number of hafnium oxide layers on a substrate. 0.5 Zr 0.5 O2 thin film and a layer of Al2O3 thin film were used to obtain Al with different doping concentrations. x -(Hf) 0.5 Zr 0.5 O2) y Ferroelectric thin films, where x represents the number of Al2O3 layers deposited using ALD, and y represents the number of Hf layers deposited using ALD. 0.5 Zr 0.5 The number of O2 layers; for the obtained Al x -(Hf) 0.5 Zr 0.5 O2) y Ferroelectric thin films are subjected to high-temperature annealing to obtain Al. x -(Hf) 0.5 Zr 0.5 O2) y Ferroelectric thin film samples; for the obtained Al x -(Hf) 0.5 Zr 0.5 O2) y A hafnium oxide-based ferroelectric thin film was obtained by depositing a top electrode and a bottom electrode onto a ferroelectric thin film sample. This invention improves the performance of annealed ferroelectric thin films without electrode constraint, deepens the understanding of the ferroelectric principle of HfO2 thin films, and promotes the development of the field of novel practical ferroelectric thin films.

The present invention relates to a ferroelectric thin film transistor and a method of manufacturing the same. According to an example embodiment of the present invention, a ferroelectric thin film transistor may include: a ferroelectric layer formed by depositing a ferroelectric material on a buffer layer provided on a substrate, a semiconductor layer formed by depositing an oxide on the ferroelectric layer and doping an upper region thereof through plasma treatment, a gate insulating layer formed by depositing a dielectric material on the semiconductor layer, a gate electrode formed by depositing a metal material on the gate insulating layer and performing a gate patterning process, an interlayer formed on the gate electrode and the semiconductor layer, and a source electrode and a drain electrode formed by patterning the interlayer and depositing a metal material.

The phase structure evolution phase field analysis method in the annealing and crystallization process of the amorphous hafnium oxide-based ferroelectric film comprises the following steps: S1, setting a sequence parameter xi according to the evolution process from an amorphous phase to a crystal phase in the annealing process, and setting a sequence parameter eta according to the process of the crystal phase and the crystal phase; s2, a phase field theoretical model is established, the total free energy is the sum of the free energy of the sequence parameter xi and the free energy of the sequence parameter eta, and the free density in the free energy of the sequence parameter eta is obtained through coupling of the sequence parameter xi and the sequence parameter eta; s3, deducing a weak form of the control equation; and S4, compiling the weak form equation into COMSOL finite element software, solving and analyzing the phase structure in the annealing crystallization process of the thin film. According to the method, the sequence parameter xi representing the transformation process from the amorphous phase to the crystalline phase is introduced and coupled with the sequence parameter eta to construct a new free energy equation and a new control equation, the weak form of the control equation is deduced, and the phase structure and the evolution rule of the hafnium oxide-based ferroelectric film at different annealing moments can be dynamically reproduced.

The application provides a ferroelectric thin film with a two-dimensional layered electrode and a preparation method thereof. The ferroelectric thin film comprises a ferroelectric hafnium oxide thin film and a two-dimensional layered calcium nitride electrode arranged on the ferroelectric hafnium oxide thin film. The calcium nitride of the application has excellent in-plane lattice matching with hafnium oxide (111), and the lattice mismatch degree is extremely low, which is beneficial to realize high-quality epitaxial growth of the heterostructure and provides a structural basis for device manufacturing. The calcium nitride of the application can form stable chemical bonds (such as Hf-N and O-Ca) with hafnium oxide at the interface, can effectively enhance the interface bonding force, and improve the structural stability of the device. The calcium nitride of the application can significantly inhibit the depolarization field in the hafnium oxide thin film, restore and exceed the ferroelectric polarization intensity of the hafnium oxide bulk, and significantly improve the ferroelectric performance of the hafnium oxide.

The embodiment of the invention discloses a donor-receptor complementary co-doped hafnium oxide-based ferroelectric film material and a preparation method thereof. The method comprises the following steps: according to the composition of the donor-receptor complementary co-doped hafnium oxide-based ceramic target material, mixing raw material powder to obtain mixed raw material powder; calcining the mixed raw material powder under a preset condition; pressing and molding the calcined product into a target material green body; and sintering the target material green body to obtain the donor-receptor complementary co-doped hafnium oxide-based ceramic target material. Wherein the composition of the donor-acceptor complementary co-doped hafnium oxide-based ceramic target material is expressed as AxByHf (1-x-y) O2, A is a donor and comprises elements niobium and tan, and B is an acceptor and comprises elements yttrium and lanthanum; x is more than 0.01 and less than 0.05, and y is more than 0.01 and less than 0.05; the raw material powder containing the donor comprises niobium oxide and tantalum oxide, and the raw material powder containing the acceptor comprises yttrium oxide and lanthanum oxide; and taking the donor-acceptor complementary co-doped hafnium oxide-based ceramic target material as a sputtering target, and obtaining the donor-acceptor complementary co-doped hafnium oxide-based ferroelectric material film by using a pulse laser deposition method.

The self-driven sensor and bearing slip rate in-situ monitoring method disclosed by the specification relates to the technical field of bearing detection and comprises a ferroelectric PVDF film, an upper flexible electrode, a lower flexible electrode and a spacer. The ferroelectric PVDF film is bonded to the Cu electrode area on the upper surface of the lower flexible electrode. The spacer is arranged on the two sides of the ferroelectric PVDF film in the horizontal direction. The upper flexible electrode is bonded to the spacer. When subjected to external pressure, the upper flexible electrode is deformed to contact the ferroelectric PVDF film. The self-driven sensor and bearing slip rate in-situ monitoring method provided by the present application meets the requirements of non-interference, easy integration, self-power supply and high-precision monitoring for bearing slip rate monitoring, and realizes precise wireless in-situ monitoring of bearing slip rate.

The invention discloses a high-linearity AlGaN / GaN device based on a ferroelectric medium, a conductor layer and an AlGaN layer are arranged on a GaN layer, a barrier layer is formed, a ferroelectric film is arranged between a grid electrode and the barrier layer, and the high-linearity AlGaN / GaN device based on the ferroelectric medium is obtained. In the prior art, the linearity of a device is improved to a certain extent, but the complexity of the device is increased due to higher design requirements on a process and an epitaxial material. According to the invention, a layer of ferroelectric medium is introduced under the gate, and polarization regulation and control of the AlGaN / GaN HEMT are realized by utilizing the characteristic that the polarization intensity of the ferroelectric medium can be modulated by an external electric field and an extremely high dielectric constant, so that relatively flat transconductance is obtained. According to the high-linearity AlGaN / GaN HEMT device, the ferroelectric material is introduced and the parameters of the ferroelectric material are optimized, so that the electrical characteristics of the AlGaN / GaN HEMT device are successfully regulated and controlled, the peak transconductance is broadened, and the high-linearity AlGaN / GaN HEMT device based on the ferroelectric gate medium is realized. Therefore, an important theoretical and experimental basis is provided for further improving the performance of the device and expanding the application field.

The application discloses a lead lanthanum zirconium tin-based antiferroelectric film prepared through doping regulation, a preparation method and application thereof, and relates to the technical field of antiferroelectric films. The lead lanthanum zirconium tin-based antiferroelectric film is prepared through the following steps. First, a mixed solution is prepared by mixing lead acetate trihydrate, dibutyl tin diacetate, lanthanum nitrate hexahydrate, manganese acetate tetrahydrate and glacial acetic acid. Then, the mixed solution is heated and stirred and cooled. Subsequently, polyethylene glycol and acetylacetone are added in sequence and stirred at room temperature. Then, zirconium n-propylate, ethylene glycol methyl ether and deionized water are added and stirred at room temperature. Finally, lactic acid is added and stirred at room temperature. After standing, a precursor solution is obtained through filtration. The precursor solution is prepared on a Pt(111) / Ti / SiO2 / Si(004) substrate through spin coating. Then, the precursor solution is subjected to drying treatment and pyrolysis treatment. The thin film of the first layer and the tenth layer is subjected to annealing treatment in an air atmosphere, so that the lead lanthanum zirconium tin-based antiferroelectric film is obtained. While realizing a larger refrigeration temperature change value, the electric refrigerator refrigeration effect is also expanded to a low-temperature region, and the antiferroelectric performance is more excellent.

This invention discloses a phase-field method for multi-topological domain cyclic transformation in lead titanate (PTO) ferroelectric thin films. A computational model of the PTO ferroelectric thin film is established, defining polarization, potential, displacement, and oxygen vacancy concentration as field variables. Based on Ginzburg-Landau theory, a total free energy expression for the PTO ferroelectric thin film is established, incorporating oxygen vacancy transport processes and the coupling between oxygen vacancies and the electrostatic field. Combining time-correlated Ginzburg-Landau kinetic equations, mechanical equilibrium equations, electrostatic equilibrium equations, and Nernst-Planck equations, a phase-field model of the PTO ferroelectric thin film coupled with multiple physics fields is established. A stable initial skyrmion domain structure is constructed, and a preset uniform electric field sequence is applied to simulate the cyclic transformation process between skyrmions and flux-closed domains and / or stripe domains. This method can analyze the evolution path, transformation threshold, oxygen vacancy distribution, and cyclic stability of topological domains in PTO ferroelectric thin films under the synergistic effect of an applied electric field and oxygen vacancies, providing a theoretical basis for the design of ferroelectric topological domain multi-state storage devices.

The invention relates to the field of semiconductor devices, in particular to an ultra-low sub-threshold swing transistor based on a hafnium-aluminum-oxygen ultra-thin matching layer film and a preparation method of the ultra-low sub-threshold swing transistor based on the hafnium-aluminum-oxygen ultra-thin matching layer film. And the driving capability and switching speed of the device are further improved. On the premise of ensuring stable characteristics of the ferroelectric film, a proper matching layer medium is introduced to achieve the purpose of reducing clockwise hysteresis caused by an interface state so as to further reduce total hysteresis, the introduced new matching layer Hf1-aAlaOb is compared with a common Al2O3 matching layer, nitridation process research is carried out, a capacitance matching medium most suitable for Zr1-xAlxOy is explored, and the performance of the ferroelectric film is improved. And the driving capability and switching speed of the device are further improved.

The invention discloses a gradient diffusion doped ferroelectric film and a preparation method thereof. The preparation method comprises the following steps: selecting a substrate and depositing a film layer on the substrate; preparing a ferroelectric film on the substrate on which the film layer is deposited by using a chemical method; and performing high-energy crystallization treatment on the ferroelectric film to obtain the gradient doped ferroelectric film. According to the invention, a means of preparing the film through a chemical method is combined with a characteristic of diffusing film particles through continuous action of a high-energy crystallization method, so that the element gradient doped ferroelectric film with strong ferroelectric property and high polarization switching speed is effectively prepared.

This invention discloses a method and apparatus for awakening the polarization of a large-area ferroelectric capacitor at the wafer level. The wafer consists of a bottom electrode, a ferroelectric layer, and a patterned, independent top electrode array stacked sequentially from bottom to top. The bottom electrode is electrically connected to one end of a pulse voltage generator, and the conductive film on the surface of a flexible conductive roller is electrically connected to the other end of the pulse voltage generator. By controlling the horizontal movement of the wafer stage, the flexible conductive roller is driven to roll and contact the surface of the top electrode array; simultaneously, a preset pulse voltage is applied between the bottom electrode and the conductive film using the pulse voltage generator, increasing the ferroelectric remanent polarization intensity of the ferroelectric film covered by the top electrode in the contact area, thus achieving ferroelectric polarization awakening. This invention, after a high-temperature heat treatment at over 200°C, efficiently and over a large area awakens the polarization of the ferroelectric film corresponding to the top electrode array, ensuring high stability and consistency in its ferroelectric remanent polarization intensity.

This invention discloses a method for controlling the polarization reversal characteristics of hafnium-based ferroelectric thin films through surface ion treatment, relating to the field of ferroelectric memory device technology. The method includes: providing a substrate; forming a hafnium-based ferroelectric thin film on the substrate; and after rapid thermal annealing of the hafnium-based ferroelectric thin film, introducing control ions onto the film surface through a surface ion treatment process to control the polarization reversal characteristics. The surface ion treatment process includes electrochemical treatment or plasma treatment, and the control ions include one or more of halide ions, hydrogen ions, hydroxide ions, sulfur-containing ions, and nitrogen-containing ions. This invention achieves effective control of the surface electric field distribution and polarization reversal barrier of the hafnium-based ferroelectric thin film through surface ion treatment, significantly reducing the coercive field and optimizing polarization stability, enabling ferroelectric domains to flip at lower voltages. This method is simple, low-cost, and compatible with CMOS processes, making it suitable for fabricating high-performance, low-power ferroelectric memory devices.

The application discloses an electrode structure and a polarization method for an ultrathin back gate ferroelectric dielectric layer, which comprises a source electrode, a drain electrode and a gate electrode; a channel is arranged on the upper surface of the ferroelectric dielectric layer, the source electrode and the drain electrode are arranged at two ends of the channel respectively, and the gate electrode is arranged on the lower surface of the ferroelectric dielectric layer; a first polarization pulse input port is arranged between the source electrode and the gate electrode, and a second polarization pulse input port is arranged between the drain electrode and the gate electrode. The application solves the problems that the low breakdown strength is introduced due to the ultrathin thickness of the ferroelectric film, and the polarization electric field cannot be applied to the vertical channel due to the back gate structure, so that the polarization is insufficient, realizes the regulation and control of the polarization performance of the hafnium-based ultrathin ferroelectric film serving as a back gate dielectric layer in a field effect transistor, further improves the reliability and stability of the residual polarization field, and has important significance for constructing a floating gate structure of a field effect device and inhibiting device leakage and power consumption.

The invention discloses a preparation method of an HfO2-based ferroelectric film with gradient oxygen vacancy distribution as well as the film and application of the HfO2-based ferroelectric film. The method comprises the steps that a lower electrode is prepared on a substrate, an amorphous HfO2-based prefabricated film is deposited on the lower electrode through atomic layer deposition, an upper electrode is prepared on the prefabricated film to form a sandwich stacking structure, and crystallization annealing is carried out to induce the prefabricated film to be crystallized into a ferroelectric orthorhombic phase; wherein the atomic layer deposition comprises at least one oxidant modulation period, a first deposition stage and a second deposition stage with different oxidation capacities are alternately carried out, and the oxygen content and oxygen vacancy defect distribution are regulated and controlled in the film thickness direction through the combination of sub-cycles, so that the oxygen vacancy concentration on one side close to the lower electrode and the upper electrode is lower than that in the middle area of the film. The obtained film can be applied to devices such as ferroelectric capacitors and ferroelectric field effect transistors, and is used for improving polarization output, reducing electric leakage and improving consistency and reliability of the devices.

The application discloses a high-frequency ferroelectric negative capacitance field effect transistor and a preparation method thereof, and belongs to the field of field effect transistor logic devices and circuits of CMOS super-large integrated circuits. The high-frequency negative capacitance field effect transistor provided by the application overcomes problems of low working frequency and large hysteresis of a traditional negative capacitance field effect transistor by taking a needle-shaped ferroelectric domain structure ferroelectric film with a fast ferroelectric negative capacitance effect as a gate dielectric layer and combining specific device structures and processes. Compared with similar devices, the product has the outstanding advantages of fast operation speed, small hysteresis and low power consumption, and has important academic and application values in the fields of microelectronic devices, military industry and aerospace.

The invention provides a ferroelectric memory, a preparation method thereof and electronic equipment. The ferroelectric memory comprises a substrate and a plurality of memory cells formed on the substrate, wherein each memory cell comprises a ferroelectric capacitor; the ferroelectric capacitor comprises a first electrode and a second electrode which are stacked, and a ferroelectric layer; the ferroelectric layer comprises at least one of hafnium oxide and zirconium oxide and doping elements; the electronegativity of the doping elements is less than that of oxygen, such as sulfur, selenium and tellurium. Therefore, anions formed by doping the elements into the ferroelectric layer are easier to displace under the action of an electric field, the electric polarization state is easier to overturn, the coercive electric field of the ferroelectric film is reduced, and meanwhile, a rectangular ferroelectric hysteresis loop can be maintained, so that the working voltage of the ferroelectric memory device can be reduced, and the anti-interference capability can be improved.

The invention discloses an oxide channel aluminum scandium nitrogen ferroelectric thin film transistor memory which comprises a drain end electrode, an oxide semiconductor channel layer, an oxide dielectric layer, a source end electrode, a floating gate metal layer, a ferroelectric dielectric layer and a control end electrode. The floating gate metal layer is located on the substrate, the oxide dielectric layer and the ferroelectric layer are located on the floating gate metal layer and are isolated from each other, and the ferroelectric layer is an aluminum scandium nitrogen ferroelectric film; the oxide semiconductor channel layer is located on the oxide dielectric layer, and the drain end electrode and the source end electrode are arranged on the oxide semiconductor channel layer; the control end electrode is arranged on the ferroelectric dielectric layer to form a ferroelectric capacitor, and the control end electrode is used for applying a pulse or a direct current signal to control the polarization direction of the ferroelectric dielectric layer and regulate and control the carrier concentration of the oxide semiconductor channel layer, so that the threshold voltage of the device is regulated and controlled, and the purpose of storing data is achieved.

The application belongs to the technical field of organic semiconductor electronic devices, and discloses a flexible threshold value adjustable negative capacitance transistor and a preparation method, and a small logic circuit. The flexible threshold value adjustable negative capacitance transistor comprises a flexible substrate, an organic semiconductor layer, an organic dielectric layer, a source-drain electrode and two gate electrodes. The preparation method is as follows: a bottom gate electrode is prepared on the surface of the flexible substrate and an organic ferroelectric film is spin-coated; an organic polymer film is spin-coated on the surface of the organic dielectric layer as a semiconductor channel layer; a source / drain metal electrode is prepared; finally, an organic ferroelectric film is spin-coated and a top gate electrode is prepared. The application utilizes the negative capacitance principle of the organic ferroelectric transistor to reduce the working voltage and power consumption, and the double-gate structure is made to make the threshold voltage of the transistor adjustable, which has a great effect in the flexible logic circuit based on the unipolar device.

The invention provides a crack-free lithium niobate film based on a Si substrate and a growth method and application thereof, and belongs to the field of ferroelectric film growth methods. According to the crack-free lithium niobate thin film based on the Si substrate, the substrate is selected from a Si substrate, and a target material is selected from congruent lithium niobate ceramic doped with 2.0 mol%-5.0 mol% of erbium and congruent lithium niobate ceramic doped with 5.0 mol% of iron prepared by a solid-phase reaction method, or is selected from congruent lithium niobate crystal doped with 2.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method, or is selected from congruent lithium niobate crystal doped with 5.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method. The lithium niobate thin film shows a lithium niobate (006) characteristic diffraction peak and a lithium-deficient phase LiNb3O8 (-602) characteristic diffraction peak, the surface of the lithium niobate thin film is flat, smooth and crack-free, the problem of surface cracking of a Si-based lithium niobate thin film for a long time is solved, and the lithium niobate thin film can be used for preparing micro-cavities, electro-optical modulators, photoelectric detectors, super-surface micro-nano devices and the like and has wide application prospects. And a foundation is laid for manufacturing and researching an integrated device on a lithium niobate film sheet.

The application discloses a polarization-enhanced ferroelectric synapse device and a preparation method thereof. The polarization-enhanced ferroelectric synapse device comprises a substrate, a two-dimensional ferroelectric film formed on the substrate as a channel, a source electrode and a drain electrode formed on both sides of the two-dimensional ferroelectric film, a ferroelectric gate dielectric layer which is a hafnium-based ferroelectric film and is formed on the device, and a gate electrode formed on the ferroelectric gate dielectric layer and located above the channel. When a positive voltage is applied to the gate electrode, the hafnium-based ferroelectric film is subjected to polarization reversal, and the resistance of the device becomes small. At this time, the polarization intensity only depends on the hafnium-based ferroelectric film. When the positive voltage is continuously applied, the hafnium-based ferroelectric film and the two-dimensional ferroelectric film are both subjected to polarization reversal, the resistance of the device becomes minimum, the polarization intensity becomes maximum, and the effects of polarization enhancement and increase of the resistance state regulation range are realized.