134 results about "Ferroelectric thin films" patented technology

The invention provides a hafnium oxide-based ferroelectric film annealing process with a low thermal budget and a hafnium oxide-based ferroelectric film, and relates to the field of ferroelectric films, the hafnium oxide-based ferroelectric film is subjected to multiple low-temperature rapid annealing cycles, and the hafnium oxide-based ferroelectric film annealing process comprises the following steps: heating to an annealing temperature of 400 DEG C at a heating rate of 10-80K / s, keeping the temperature for 15-120s, and cooling at a cooling rate of not less than 10K / s, and after cooling to room temperature, carrying out next annealing cycle. The internal defect distribution of the thin film is changed through repeated rapid annealing circulation; and multiple times of rapid cooling are introduced, so that multiple times of enhanced stress is generated in the thin film, the hafnium oxide phase change potential barrier is cooperatively regulated and controlled, conversion from a non-ferroelectric high-temperature tetragonal phase to a ferroelectric orthogonal phase is promoted, and the requirement for the high annealing temperature is avoided.

The embodiment of the invention discloses a hafnium oxide-based ferroelectric film doped in a calcium gap position and a preparation method. The method comprises the following steps: preparing a target material: mixing hafnium oxide and calcium oxide according to a set ratio, and grinding to obtain mixed raw material powder; calcining the mixed raw material powder for the first time; grinding the mixed raw material powder calcined for the first time, and performing compression molding to obtain a target material biscuit; calcining the target material biscuit for the second time to obtain the hafnium oxide-based ceramic target material doped in the calcium gap position; a commercial bottom electrode La0. 7Sr0. 3MnO3 target material is used as a first sputtering target, sputtering is carried out under a first set condition, and an LSMO bottom electrode thin film is obtained; taking the calcium gap position doped hafnium oxide-based ceramic target material as a second sputtering target, sputtering under a second set condition, and epitaxially growing on the LSMO bottom electrode film to form a calcium gap position doped hafnium oxide-based ferroelectric film; the chemical composition of the hafnium oxide-based ferroelectric film doped in the calcium gap position is CaxHf (1-x) O (2-x), x is 0.01-0.05, and calcium ions occupy the gap position of a hafnium oxide crystal lattice.

The invention provides a method for recovering a hafnium oxide-based ferroelectric erasing and writing mark phenomenon, which relates to the field of ferroelectric films, and comprises the step of applying bipolar electric pulses or unipolar electric pulses with the polarization direction opposite to that of data erasing and writing electric pulses to a hafnium oxide-based ferroelectric film device which is subjected to data erasing and writing after the electric pulses are applied to the hafnium oxide-based ferroelectric film device. By means of the method, the imprint offset field caused by data erasing and writing can be effectively recovered.

This invention discloses an electrode-free constrained annealed hafnium oxide-based ferroelectric thin film, its preparation method, and its application. The method employs ALD technology to alternately deposit a predetermined number of hafnium oxide layers on a substrate. 0.5 Zr 0.5 O2 thin film and a layer of Al2O3 thin film were used to obtain Al with different doping concentrations. x -(Hf) 0.5 Zr 0.5 O2) y Ferroelectric thin films, where x represents the number of Al2O3 layers deposited using ALD, and y represents the number of Hf layers deposited using ALD. 0.5 Zr 0.5 The number of O2 layers; for the obtained Al x -(Hf) 0.5 Zr 0.5 O2) y Ferroelectric thin films are subjected to high-temperature annealing to obtain Al. x -(Hf) 0.5 Zr 0.5 O2) y Ferroelectric thin film samples; for the obtained Al x -(Hf) 0.5 Zr 0.5 O2) y A hafnium oxide-based ferroelectric thin film was obtained by depositing a top electrode and a bottom electrode onto a ferroelectric thin film sample. This invention improves the performance of annealed ferroelectric thin films without electrode constraint, deepens the understanding of the ferroelectric principle of HfO2 thin films, and promotes the development of the field of novel practical ferroelectric thin films.

The present invention relates to a ferroelectric thin film transistor and a method of manufacturing the same. According to an example embodiment of the present invention, a ferroelectric thin film transistor may include: a ferroelectric layer formed by depositing a ferroelectric material on a buffer layer provided on a substrate, a semiconductor layer formed by depositing an oxide on the ferroelectric layer and doping an upper region thereof through plasma treatment, a gate insulating layer formed by depositing a dielectric material on the semiconductor layer, a gate electrode formed by depositing a metal material on the gate insulating layer and performing a gate patterning process, an interlayer formed on the gate electrode and the semiconductor layer, and a source electrode and a drain electrode formed by patterning the interlayer and depositing a metal material.

The embodiment of the invention discloses a donor-receptor complementary co-doped hafnium oxide-based ferroelectric film material and a preparation method thereof. The method comprises the following steps: according to the composition of the donor-receptor complementary co-doped hafnium oxide-based ceramic target material, mixing raw material powder to obtain mixed raw material powder; calcining the mixed raw material powder under a preset condition; pressing and molding the calcined product into a target material green body; and sintering the target material green body to obtain the donor-receptor complementary co-doped hafnium oxide-based ceramic target material. Wherein the composition of the donor-acceptor complementary co-doped hafnium oxide-based ceramic target material is expressed as AxByHf (1-x-y) O2, A is a donor and comprises elements niobium and tan, and B is an acceptor and comprises elements yttrium and lanthanum; x is more than 0.01 and less than 0.05, and y is more than 0.01 and less than 0.05; the raw material powder containing the donor comprises niobium oxide and tantalum oxide, and the raw material powder containing the acceptor comprises yttrium oxide and lanthanum oxide; and taking the donor-acceptor complementary co-doped hafnium oxide-based ceramic target material as a sputtering target, and obtaining the donor-acceptor complementary co-doped hafnium oxide-based ferroelectric material film by using a pulse laser deposition method.

The self-driven sensor and bearing slip rate in-situ monitoring method disclosed by the specification relates to the technical field of bearing detection and comprises a ferroelectric PVDF film, an upper flexible electrode, a lower flexible electrode and a spacer. The ferroelectric PVDF film is bonded to the Cu electrode area on the upper surface of the lower flexible electrode. The spacer is arranged on the two sides of the ferroelectric PVDF film in the horizontal direction. The upper flexible electrode is bonded to the spacer. When subjected to external pressure, the upper flexible electrode is deformed to contact the ferroelectric PVDF film. The self-driven sensor and bearing slip rate in-situ monitoring method provided by the present application meets the requirements of non-interference, easy integration, self-power supply and high-precision monitoring for bearing slip rate monitoring, and realizes precise wireless in-situ monitoring of bearing slip rate.

The invention discloses a high-linearity AlGaN / GaN device based on a ferroelectric medium, a conductor layer and an AlGaN layer are arranged on a GaN layer, a barrier layer is formed, a ferroelectric film is arranged between a grid electrode and the barrier layer, and the high-linearity AlGaN / GaN device based on the ferroelectric medium is obtained. In the prior art, the linearity of a device is improved to a certain extent, but the complexity of the device is increased due to higher design requirements on a process and an epitaxial material. According to the invention, a layer of ferroelectric medium is introduced under the gate, and polarization regulation and control of the AlGaN / GaN HEMT are realized by utilizing the characteristic that the polarization intensity of the ferroelectric medium can be modulated by an external electric field and an extremely high dielectric constant, so that relatively flat transconductance is obtained. According to the high-linearity AlGaN / GaN HEMT device, the ferroelectric material is introduced and the parameters of the ferroelectric material are optimized, so that the electrical characteristics of the AlGaN / GaN HEMT device are successfully regulated and controlled, the peak transconductance is broadened, and the high-linearity AlGaN / GaN HEMT device based on the ferroelectric gate medium is realized. Therefore, an important theoretical and experimental basis is provided for further improving the performance of the device and expanding the application field.

This invention discloses a phase-field method for multi-topological domain cyclic transformation in lead titanate (PTO) ferroelectric thin films. A computational model of the PTO ferroelectric thin film is established, defining polarization, potential, displacement, and oxygen vacancy concentration as field variables. Based on Ginzburg-Landau theory, a total free energy expression for the PTO ferroelectric thin film is established, incorporating oxygen vacancy transport processes and the coupling between oxygen vacancies and the electrostatic field. Combining time-correlated Ginzburg-Landau kinetic equations, mechanical equilibrium equations, electrostatic equilibrium equations, and Nernst-Planck equations, a phase-field model of the PTO ferroelectric thin film coupled with multiple physics fields is established. A stable initial skyrmion domain structure is constructed, and a preset uniform electric field sequence is applied to simulate the cyclic transformation process between skyrmions and flux-closed domains and / or stripe domains. This method can analyze the evolution path, transformation threshold, oxygen vacancy distribution, and cyclic stability of topological domains in PTO ferroelectric thin films under the synergistic effect of an applied electric field and oxygen vacancies, providing a theoretical basis for the design of ferroelectric topological domain multi-state storage devices.

This invention discloses a method and apparatus for awakening the polarization of a large-area ferroelectric capacitor at the wafer level. The wafer consists of a bottom electrode, a ferroelectric layer, and a patterned, independent top electrode array stacked sequentially from bottom to top. The bottom electrode is electrically connected to one end of a pulse voltage generator, and the conductive film on the surface of a flexible conductive roller is electrically connected to the other end of the pulse voltage generator. By controlling the horizontal movement of the wafer stage, the flexible conductive roller is driven to roll and contact the surface of the top electrode array; simultaneously, a preset pulse voltage is applied between the bottom electrode and the conductive film using the pulse voltage generator, increasing the ferroelectric remanent polarization intensity of the ferroelectric film covered by the top electrode in the contact area, thus achieving ferroelectric polarization awakening. This invention, after a high-temperature heat treatment at over 200°C, efficiently and over a large area awakens the polarization of the ferroelectric film corresponding to the top electrode array, ensuring high stability and consistency in its ferroelectric remanent polarization intensity.

This invention discloses a method for controlling the polarization reversal characteristics of hafnium-based ferroelectric thin films through surface ion treatment, relating to the field of ferroelectric memory device technology. The method includes: providing a substrate; forming a hafnium-based ferroelectric thin film on the substrate; and after rapid thermal annealing of the hafnium-based ferroelectric thin film, introducing control ions onto the film surface through a surface ion treatment process to control the polarization reversal characteristics. The surface ion treatment process includes electrochemical treatment or plasma treatment, and the control ions include one or more of halide ions, hydrogen ions, hydroxide ions, sulfur-containing ions, and nitrogen-containing ions. This invention achieves effective control of the surface electric field distribution and polarization reversal barrier of the hafnium-based ferroelectric thin film through surface ion treatment, significantly reducing the coercive field and optimizing polarization stability, enabling ferroelectric domains to flip at lower voltages. This method is simple, low-cost, and compatible with CMOS processes, making it suitable for fabricating high-performance, low-power ferroelectric memory devices.

The application discloses an electrode structure and a polarization method for an ultrathin back gate ferroelectric dielectric layer, which comprises a source electrode, a drain electrode and a gate electrode; a channel is arranged on the upper surface of the ferroelectric dielectric layer, the source electrode and the drain electrode are arranged at two ends of the channel respectively, and the gate electrode is arranged on the lower surface of the ferroelectric dielectric layer; a first polarization pulse input port is arranged between the source electrode and the gate electrode, and a second polarization pulse input port is arranged between the drain electrode and the gate electrode. The application solves the problems that the low breakdown strength is introduced due to the ultrathin thickness of the ferroelectric film, and the polarization electric field cannot be applied to the vertical channel due to the back gate structure, so that the polarization is insufficient, realizes the regulation and control of the polarization performance of the hafnium-based ultrathin ferroelectric film serving as a back gate dielectric layer in a field effect transistor, further improves the reliability and stability of the residual polarization field, and has important significance for constructing a floating gate structure of a field effect device and inhibiting device leakage and power consumption.

The invention discloses a preparation method of an HfO2-based ferroelectric film with gradient oxygen vacancy distribution as well as the film and application of the HfO2-based ferroelectric film. The method comprises the steps that a lower electrode is prepared on a substrate, an amorphous HfO2-based prefabricated film is deposited on the lower electrode through atomic layer deposition, an upper electrode is prepared on the prefabricated film to form a sandwich stacking structure, and crystallization annealing is carried out to induce the prefabricated film to be crystallized into a ferroelectric orthorhombic phase; wherein the atomic layer deposition comprises at least one oxidant modulation period, a first deposition stage and a second deposition stage with different oxidation capacities are alternately carried out, and the oxygen content and oxygen vacancy defect distribution are regulated and controlled in the film thickness direction through the combination of sub-cycles, so that the oxygen vacancy concentration on one side close to the lower electrode and the upper electrode is lower than that in the middle area of the film. The obtained film can be applied to devices such as ferroelectric capacitors and ferroelectric field effect transistors, and is used for improving polarization output, reducing electric leakage and improving consistency and reliability of the devices.

The application discloses a high-frequency ferroelectric negative capacitance field effect transistor and a preparation method thereof, and belongs to the field of field effect transistor logic devices and circuits of CMOS super-large integrated circuits. The high-frequency negative capacitance field effect transistor provided by the application overcomes problems of low working frequency and large hysteresis of a traditional negative capacitance field effect transistor by taking a needle-shaped ferroelectric domain structure ferroelectric film with a fast ferroelectric negative capacitance effect as a gate dielectric layer and combining specific device structures and processes. Compared with similar devices, the product has the outstanding advantages of fast operation speed, small hysteresis and low power consumption, and has important academic and application values in the fields of microelectronic devices, military industry and aerospace.

The invention discloses an oxide channel aluminum scandium nitrogen ferroelectric thin film transistor memory which comprises a drain end electrode, an oxide semiconductor channel layer, an oxide dielectric layer, a source end electrode, a floating gate metal layer, a ferroelectric dielectric layer and a control end electrode. The floating gate metal layer is located on the substrate, the oxide dielectric layer and the ferroelectric layer are located on the floating gate metal layer and are isolated from each other, and the ferroelectric layer is an aluminum scandium nitrogen ferroelectric film; the oxide semiconductor channel layer is located on the oxide dielectric layer, and the drain end electrode and the source end electrode are arranged on the oxide semiconductor channel layer; the control end electrode is arranged on the ferroelectric dielectric layer to form a ferroelectric capacitor, and the control end electrode is used for applying a pulse or a direct current signal to control the polarization direction of the ferroelectric dielectric layer and regulate and control the carrier concentration of the oxide semiconductor channel layer, so that the threshold voltage of the device is regulated and controlled, and the purpose of storing data is achieved.

The application belongs to the technical field of organic semiconductor electronic devices, and discloses a flexible threshold value adjustable negative capacitance transistor and a preparation method, and a small logic circuit. The flexible threshold value adjustable negative capacitance transistor comprises a flexible substrate, an organic semiconductor layer, an organic dielectric layer, a source-drain electrode and two gate electrodes. The preparation method is as follows: a bottom gate electrode is prepared on the surface of the flexible substrate and an organic ferroelectric film is spin-coated; an organic polymer film is spin-coated on the surface of the organic dielectric layer as a semiconductor channel layer; a source / drain metal electrode is prepared; finally, an organic ferroelectric film is spin-coated and a top gate electrode is prepared. The application utilizes the negative capacitance principle of the organic ferroelectric transistor to reduce the working voltage and power consumption, and the double-gate structure is made to make the threshold voltage of the transistor adjustable, which has a great effect in the flexible logic circuit based on the unipolar device.

The invention provides a crack-free lithium niobate film based on a Si substrate and a growth method and application thereof, and belongs to the field of ferroelectric film growth methods. According to the crack-free lithium niobate thin film based on the Si substrate, the substrate is selected from a Si substrate, and a target material is selected from congruent lithium niobate ceramic doped with 2.0 mol%-5.0 mol% of erbium and congruent lithium niobate ceramic doped with 5.0 mol% of iron prepared by a solid-phase reaction method, or is selected from congruent lithium niobate crystal doped with 2.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method, or is selected from congruent lithium niobate crystal doped with 5.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method. The lithium niobate thin film shows a lithium niobate (006) characteristic diffraction peak and a lithium-deficient phase LiNb3O8 (-602) characteristic diffraction peak, the surface of the lithium niobate thin film is flat, smooth and crack-free, the problem of surface cracking of a Si-based lithium niobate thin film for a long time is solved, and the lithium niobate thin film can be used for preparing micro-cavities, electro-optical modulators, photoelectric detectors, super-surface micro-nano devices and the like and has wide application prospects. And a foundation is laid for manufacturing and researching an integrated device on a lithium niobate film sheet.

The application discloses a polarization-enhanced ferroelectric synapse device and a preparation method thereof. The polarization-enhanced ferroelectric synapse device comprises a substrate, a two-dimensional ferroelectric film formed on the substrate as a channel, a source electrode and a drain electrode formed on both sides of the two-dimensional ferroelectric film, a ferroelectric gate dielectric layer which is a hafnium-based ferroelectric film and is formed on the device, and a gate electrode formed on the ferroelectric gate dielectric layer and located above the channel. When a positive voltage is applied to the gate electrode, the hafnium-based ferroelectric film is subjected to polarization reversal, and the resistance of the device becomes small. At this time, the polarization intensity only depends on the hafnium-based ferroelectric film. When the positive voltage is continuously applied, the hafnium-based ferroelectric film and the two-dimensional ferroelectric film are both subjected to polarization reversal, the resistance of the device becomes minimum, the polarization intensity becomes maximum, and the effects of polarization enhancement and increase of the resistance state regulation range are realized.

The invention relates to a modeling method of a ferroelectric field effect transistor, and relates to the technical field of memories. Comprising the following steps: constructing a classical ferroelectric Preisach model to calculate an effective polarization value of a ferroelectric film; introducing a polarization relaxation time parameter tau, and establishing a differential relationship between the external voltage and the effective voltage of the ferroelectric capacitor, so as to establish a ferroelectric polarization dynamic model; and on the basis of the model, constructing electrical modeling of the ferroelectric field effect transistor. According to the method, the polarization relaxation time parameter tau is introduced into the Preisach model, the dynamic change of ferroelectric polarization is more accurately reflected, and the change rule of the storage window of the ferroelectric field effect transistor device after the grid pulse signal is written can be better predicted, so that the working voltage can be guided to be optimized, and the writing reliability of a memory is improved.

The application discloses a method for preparing a high self-polarization piezoelectric performance bismuth ferrite-based film through multi-element isometric solid solution. The method comprises the following steps: configuring sols of more than three different cations which are solid-solved at B positions of bismuth ferrite, then dropping the sols on a substrate, uniformly coating the sols, solidifying, drying, pyrolyzing and annealing, repeating the dropping, uniformly coating, solidifying, drying, pyrolyzing and annealing processes, and obtaining a bismuth ferrite-based ferroelectric polycrystal film with a required thickness. The sol-gel method is adopted to prepare the multi-element isometric solid solution ferroelectric film, so that accurate component control can be realized, the growth of the material on a large-area substrate is suitable, the equipment and synthesis steps are simple, the material is saved, the cost is low, industrialized production is easy to realize, and the prepared ferroelectric polycrystal film has excellent self-polarization characteristics and a high piezoelectric coefficient, so that the ferroelectric polycrystal film has a wide application prospect in the field of electronic material technology.

The invention provides a high-frequency bulk acoustic wave resonator structure, which comprises a substrate, a bottom electrode, a piezoelectric layer and a top electrode, and is characterized in that the bottom electrode is positioned above the substrate; the piezoelectric layer is located above the bottom electrode, the piezoelectric layer is formed by alternately stacking piezoelectric film layers and ferroelectric film layers, interfaces of the adjacent piezoelectric film layers and ferroelectric film layers are in direct contact, and the adjacent piezoelectric film layers and ferroelectric film layers have opposite polarities so as to excite N-order mode resonance; n is an integer not less than the total number of the piezoelectric film layers and the ferroelectric film layers; the top electrode is over the piezoelectric layer. According to the high-frequency bulk acoustic wave resonator, the polarities of the adjacent piezoelectric film layer and ferroelectric film layer are opposite, the high-order resonance mode of the resonator is excited under the condition that the thick piezoelectric layer is maintained, and the resonance frequency of the bulk acoustic wave resonator is remarkably improved. Besides, the piezoelectric film layer and the ferroelectric film layer which are adjacent are in direct contact, an electrode material layer does not need to be inserted between the piezoelectric film layer and the ferroelectric film layer, and the device is simple in structure and high in performance.

We provide substrates with multilayer films. [Solution] The invention comprises a buffer layer made of an oxide mainly composed of La formed on a metal layer, and a PZT-based ferroelectric thin film made of PZT or PLZT formed on the buffer layer, wherein the integrated intensity of the peak of the PZT-based ferroelectric thin film (100) is measured at the XRD intensity of each of the nine points in the plane on the PZT-based ferroelectric thin film side. XY [Counts·degree] represents the integral intensity in the plane I XY The ratio of the standard deviation to the maximum value (standard deviation / maximum value) is 0.18 or less.

The application discloses a ferroelectric thin film and a preparation method thereof. (0.85‑x) Ca 0.15 Gd x ][Zr 0.2 Ti 0.8 ]O (3+0.5x) , wherein x=0.005-0.01. The ferroelectric thin film is prepared by using barium acetate as a barium source, calcium acetate and gadolinium acetate as doping sources, tetrabutyl titanate as a titanium source, zirconium n-butyrate as a zirconium source, acetic acid and glycol methyl ether as mixed solvents, and acetylacetone as an additive, and then uniformly and stably preparing a precursor solution through a sol-gel method, and then obtaining the ferroelectric thin film on a silicon substrate through spin coating, drying and calcining. The ferroelectric thin film has high crystallinity, low roughness and a nanocrystalline dense structure.

An electronic device includes: a substrate including a source, a drain, and a channel between the source and the drain; a gate electrode arranged above the substrate and facing the channel, the gate electrode being apart from the channel in a first direction; and a ferroelectric thin film structure between the channel and the gate electrode, the ferroelectric thin film structure including a first ferroelectric layer, a crystallization barrier layer including a dielectric material, and a second ferroelectric layer, which are sequentially arranged from the channel in the first direction. The average of sizes of crystal grains of the first ferroelectric layer may be less than or equal to the average of sizes of crystal grains of the second ferroelectric layer, and owing to small crystal grains, dispersion of performance may be improved.

The invention relates to a ferroelectric memristor array and a sequential sequence processing method adopting the ferroelectric memristor array, and the ferroelectric memristor array comprises a bottom array gating structure which is used for providing unit-by-unit addressing and suppressing an undercurrent path of a non-gated unit in the array when the array scale is expanded; the adjustable conductive channel structure is used for generating a continuous photoconductive effect which can be accumulated and attenuated along with time under optical excitation; the in-plane polarization regulation and control structure modifies the conductive degree of the semiconductor channel by regulating and controlling the surface potential barrier of the channel so as to form a non-volatile weight state; and the multi-physical-quantity coupled electrode structure is used as a unified channel for weight regulation and control, conductivity reading and photoelectric response. Compared with the prior art, the semiconductor channel potential barrier is dynamically regulated and controlled through in-plane polarization of the ferroelectric film, non-volatile multi-stage conductance weight is achieved, synaptic-like photoresponse and short-time memory characteristics are obtained through the continuous photoconduction effect of a semiconductor material, and the continuous light input natural accumulation and attenuation process is achieved.

This application provides a gradient-doped ferroelectric thin film device and its fabrication method, relating to the field of optoelectronic device technology. The gradient-doped ferroelectric thin film device comprises, from bottom to top, a substrate, a buried oxide layer, a buffer layer, and a ferroelectric thin film material layer; the ferroelectric thin film material layer is doped with impurity ions, with the doping concentration of the impurity ions increasing sequentially from bottom to top. This application, by employing a bottom-up incremental gradient doping design, optimizes the interface defects and internal stress of the ferroelectric thin film, overcomes the problem of lattice mismatch between ordinary ferroelectric thin films and the substrate layer, achieves improved crystal quality and enhanced electro-optic coefficient, and effectively improves the electro-optic effect.

The invention provides a gradient doped ferroelectric film device and a preparation method thereof, and relates to the technical field of optoelectronic devices. The gradient doped ferroelectric thin film device comprises a substrate, a buried oxide layer, a buffer layer and a ferroelectric thin film material layer which are sequentially stacked from bottom to top, impurity ions are doped in the ferroelectric film material layer, and the doping concentration of the impurity ions is sequentially increased from bottom to top. By adopting the gradient doping design increasing from bottom to top, the interface defect and the internal stress of the ferroelectric film are optimized, the problem of lattice mismatch between a common ferroelectric film and the substrate layer is solved, the crystal quality is improved, the electro-optical coefficient is enhanced, and the electro-optical effect is effectively improved.

This application provides a ferroelectric thin-film capacitor and its fabrication method, a ferroelectric memory, and an electronic device. Each ferroelectric thin-film capacitor in the ferroelectric memory includes two electrode layers and a ferroelectric layer, with the ferroelectric layer located between the two electrode layers. The ferroelectric layer comprises hafnium dioxide material and includes at least one first doped region, in which a first doping element is doped. The atomic radius of the first doping element is smaller than the atomic radius of the hafnium element in the ferroelectric layer. The ferroelectric memory of this application can achieve higher crystallization quality under low-temperature rapid thermal crystallization conditions, thereby reducing operating voltage and power consumption, and improving storage reliability.

The application discloses a ferroelectric local field enhanced polarized photoelectric detector and a preparation method thereof, and relates to the technical field of polarized photoelectric detection. The polarized photoelectric detector is observed from bottom to top and sequentially comprises a substrate, a two-dimensional semiconductor layer, a metal electrode pair and a ferroelectric film layer. The material of the two-dimensional semiconductor layer is black phosphorus. The material of the ferroelectric film layer is polyvinyl fluoride-based ferroelectric polymer. The metal electrode pair comprises a first metal electrode and a second metal electrode. A channel structure formed between the first metal electrode and the second metal electrode exposes part of the two-dimensional semiconductor layer. An in-plane PN junction is formed by part of the two-dimensional semiconductor layer exposed after the ferroelectric film layer is electrode polarized. The strong local field of the ferroelectric film changes the Seebeck coefficient and the conductivity of the black phosphorus in the armchair direction and the zigzag direction, enhances the photocurrent in the armchair direction, and greatly improves the polarization detection ratio of the polarized photoelectric detector.

The invention relates to the technical field of PVDF ferroelectric film preparation, and particularly provides a PVDF ferroelectric film, a preparation method thereof and a ferroelectric device, and the method comprises the steps: preparing an initial PVDF film; the initial PVDF film is placed on a moving platform; controlling the femtosecond laser to generate a downward laser beam, and controlling the mobile platform to drive the initial PVDF film to move below the femtosecond laser, so as to scan the initial PVDF film by using the laser beam and modify and polarize the scanned initial PVDF film, thereby forming a PVDF ferroelectric film; the method can effectively overcome the limitation that micro-region regulation and control are difficult to carry out and effectively avoid the problems of introduction of extra mechanical stress, high-voltage breakdown risks or nano impurities.