312 results about "Ferroelectric thin films" patented technology

The invention discloses an optical memristor, and relates to the field of photon integrated circuits and optical computing, and the optical memristor comprises a waveguide layer, a ferroelectric film layer, an electrode structure and a substrate. The ferroelectric film layer is located on the upper surface of the substrate; the waveguide layer and the electrode structure are located on the upper surface of the ferroelectric film layer; the waveguide layer is used for propagating an incident light signal and performing amplitude modulation on the incident light signal; the electrode structure is used for applying an electric field to the ferroelectric film layer; and the ferroelectric film layer is used for carrying out phase modulation on optical signals transmitted in the waveguide layer under the action of the electric field. The ferroelectric material is used as the optical switch of the optical memristor, efficient modulation of the optical phase is achieved through the non-volatility and the high electro-optical effect of the ferroelectric material, and meanwhile the optical memristor has the advantages of being low in energy consumption and rapid in response.

The invention discloses a high-durability superlattice wurtzite ferroelectric material and preparation and application thereof.The high-durability superlattice wurtzite ferroelectric material is of a stacked structure composed of wurtzite ferroelectric films and AlN films alternately, and the total layer number of the stacked structure is larger than two. The first layer and the last layer of the stacked structure are wurtzite ferroelectric films. The preparation method comprises the following steps: depositing a layer of wurtzite ferroelectric film on the substrate; depositing a layer of AlN thin film on the obtained wurtzite ferroelectric thin film; a layer of wurtzite ferroelectric film is deposited on the obtained AlN film; the steps are repeated until a required stacked structure is formed, and the material can be used for a ferroelectric memory. The AlN thin film with good lattice matching performance with the wurtzite ferroelectric thin film is inserted into the wurtzite ferroelectric thin film, so that the durability of the thin film is improved, the superlattice structure shows excellent performance of low defect, low electric leakage, high durability and the like, and the breakdown resistance and durability of the ferroelectric memory are improved when the superlattice structure is applied to the ferroelectric memory.

The present disclosure relates to a ferroelectric thin film transistor and may include: a substrate; a gate electrode layer formed on the substrate; a ferroelectric layer formed on the gate electrode layer, including a hafnium-based oxide, and including an uneven portion having at least one or more step that is formed on the gate electrode layer; a semiconductor channel layer formed on the ferroelectric layer and including an oxide semiconductor; a drain electrode layer connected to the semiconductor channel layer at one side of the gate electrode layer; and a source electrode layer connected to the semiconductor channel layer at the other side of the gate electrode layer.

The invention belongs to the field of microelectronics, and particularly relates to a preparation method and application of a ferroelectric diode based on a scandium-doped aluminum nitride thin film, and the ferroelectric diode is prepared through the following steps: S1, growing an adhesion layer on a substrate through magnetron sputtering; s2, growing a bottom electrode on the adhesion layer through magnetron sputtering; s3, growing a ferroelectric film on the bottom electrode through magnetron co-sputtering at room temperature; s4, coating photoresist on the ferroelectric film, and exposing and developing; s5, growing a top electrode on the exposed and developed ferroelectric film through magnetron sputtering; and S6, stripping to obtain the ferroelectric diode. Compared with the prior art, the method has the advantages that the problems of high preparation temperature of the Al1-xScxN layer and large thickness of the Al1-xScxN layer in the prior art are solved, the ferroelectric diode memory of the scandium-doped aluminum nitride film is prepared at room temperature for the first time, and compatibility with a CMOS (complementary metal oxide semiconductor) process is better realized.

According to the hafnium oxide-based ferroelectric crystal phase modulation method based on the superlattice structure, each hafnium oxide layer in a hafnium oxide-based ferroelectric film is designed to be formed by stacking m hafnium oxide sub-layers, and each doped element layer is designed to be formed by stacking n doped element sub-layers; the hafnium oxide layer and the doping element layer are stacked to form a superlattice structure, and the hafnium oxide-based ferroelectric crystal phase is modulated as o phase dominant, t phase dominant or o / t mixed phase by determining the values of m and n, and the method is as follows: by volume, when the content of o phase is greater than 60%, o phase dominant, m is greater than or equal to 2 and less than or equal to 10, and n is 1.5 * m; when the content of the t phase is greater than 60%, the t phase is dominant, m is greater than or equal to 20 and less than or equal to 30, and n is equal to 2.5 * m; when the difference between the content of the o phase and the content of the t phase does not exceed 20%, the phase is an o / t mixed phase, m is more than 10 and less than 20, and n is equal to 2 * m; wherein m is an even number. According to the invention, the crystalline phase of the hafnium oxide-based ferroelectric film can be modulated, the electric leakage is extremely low, and the reliability is high.

In accordance with some embodiments of the present disclosure, a memory device is provided. The memory device may include a first electrode, a ferroelectric layer fabricated on the first electrode, and a second electrode fabricated on the ferroelectric layer. The ferroelectric layer includes a plurality of ferroelectric films and a plurality of interface layers stacked alternately. Each of the ferroelectric films comprises at least one ferroelectric material, such as hafnium oxide (HfO2), zirconium oxide (ZrO2), zirconium-doped hafnium oxide (Hf1-xZrxO2), scandium-doped aluminum nitride (Al1-xScxN), titanates (BaTiO3), niobates (LiNbO3), tantalates (NaTaO3), etc. Each of the interface layers comprises at least one dielectric material that is more chemically stable than the ferroelectric material, such as aluminum oxide.

The invention provides a preparation method of a ferroelectric film. The preparation method comprises the following steps: providing a first stress layer; depositing a hafnium elementary substance and a zirconium elementary substance on the first stress layer through a magnetron sputtering process to form a ferroelectric alloy layer; the ferroelectric alloy layer is oxidized, crystal defects and crystal phase transformation stress are generated in the ferroelectric alloy layer through heat released in the oxidation process, and a ferroelectric oxidation layer is formed; performing graphical processing on the ferroelectric oxide layer, and depositing a stress material in a graphical processing area of the ferroelectric oxide layer to form a second stress layer; and carrying out rapid thermal annealing treatment on a composite layer formed by the first stress layer, the ferroelectric alloy layer and the second stress layer to promote the crystalline phase of the ferroelectric alloy layer to be converted into a ferroelectric orthogonal phase so as to obtain the ferroelectric film. The invention also provides an application of the preparation method in a microelectronic device.

The invention provides a hafnium oxide-based ferroelectric film annealing process with a low thermal budget and a hafnium oxide-based ferroelectric film, and relates to the field of ferroelectric films, the hafnium oxide-based ferroelectric film is subjected to multiple low-temperature rapid annealing cycles, and the hafnium oxide-based ferroelectric film annealing process comprises the following steps: heating to an annealing temperature of 400 DEG C at a heating rate of 10-80K / s, keeping the temperature for 15-120s, and cooling at a cooling rate of not less than 10K / s, and after cooling to room temperature, carrying out next annealing cycle. The internal defect distribution of the thin film is changed through repeated rapid annealing circulation; and multiple times of rapid cooling are introduced, so that multiple times of enhanced stress is generated in the thin film, the hafnium oxide phase change potential barrier is cooperatively regulated and controlled, conversion from a non-ferroelectric high-temperature tetragonal phase to a ferroelectric orthogonal phase is promoted, and the requirement for the high annealing temperature is avoided.

The invention provides a self-powered polarized photoelectric detector, a preparation method thereof and a method for regulating and controlling the polarization ratio of the self-powered polarized photoelectric detector. The structure of the self-powered polarized photoelectric detector comprises a conductive substrate layer, a two-dimensional perovskite ferroelectric film layer, a semiconductor material layer and a metal top electrode layer from bottom to top. The two-dimensional perovskite ferroelectric film layer and the semiconductor material layer can form a heterojunction with polarization property. Different polarization voltages are applied to the polarization photoelectric detector, the intensity of an electric field built in the two-dimensional perovskite ferroelectric film heterojunction is regulated and controlled, and the polarization ratio of the polarization sensitive photoelectric detector is dynamically regulated and controlled. The invention provides a convenient method for dynamically regulating and controlling the polarization ratio of the polarization sensitive photoelectric detector by using a ferroelectric-pyroelectric electro-optical electronic effect, and the regulation and control of the polarization ratio are realized on the same polarization device.

The invention discloses a La-doped hafnium oxide-based ferroelectric film, a capacitor and a preparation method of the La-doped hafnium oxide-based ferroelectric film, the La-doped hafnium oxide-based ferroelectric film is of a single (111)-oriented orthorhombic phase structure, and the preparation method comprises the following steps: firstly, epitaxially growing a buffer layer with consistent orientation on a (111)-oriented perovskite substrate, and then epitaxially growing a La-doped hafnium oxide-based ferroelectric film layer on the surface of the buffer layer. The La-doped hafnium oxide-based ferroelectric thin film is obtained by the method, the thickness of the thin film is accurately regulated and controlled, the performance of the La-doped hafnium oxide-based ferroelectric thin film is optimized, and the requirement of an electronic device for a high-performance ferroelectric thin film is met. The laser pulse deposition epitaxial La-doped hafnium oxide-based ferroelectric film provided by the invention is high in purity and good in film forming uniformity; meanwhile, the operation process is simple, low in energy consumption, free of pollution and easy to industrialize.

The invention discloses a strontium-doped bismuth titanate-based ferroelectric film and a preparation method thereof, and belongs to the technical field of dielectric energy storage materials. The chemical composition of the film is Ba < 1-x > Sr < x > Bi < 4 > Ti < 4 > O < 15 >, wherein x ranges from 0.025 to 0.1. The preparation method comprises the following steps: mixing ethylene glycol monomethyl ether and ethylene glycol, adding bismuth nitrate, barium acetate, strontium acetate and butyl titanate, fully stirring and filtering to obtain a precursor solution, aging, dripping to the center of a substrate for spin coating, heating a spin-coated sample to obtain a dry film, and annealing to obtain the ferroelectric film. The method is low in technological condition requirement, and the thin film obtains the optimal energy storage density by changing the doping proportion of Sr. According to the ferroelectric film, when x is equal to 0.075, the leakage current density of Ba0. 925Sr0. 075Bi4Ti4O15 (BBST75) is only 1.59 * 10 <-7 > A / cm < 2 >, the breakdown field strength is as high as 3.22 MV / cm, and at the moment, the film has the energy storage density of 28.2 J / cm < 3 > and the energy storage efficiency of 80.36%.

The invention discloses a method for improving the performance of an HZO ferroelectric capacitor through plasma interface treatment. The method comprises the following steps: forming a TiN bottom electrode on a Si substrate material through deposition; zrO2 and HfO2 are deposited on the TiN bottom electrode through an atomic layer to form an HZO ferroelectric medium layer; performing plasma treatment on the upper surface of the HZO ferroelectric dielectric layer; after processing, a TiN top electrode is formed on the upper surface of the HZO ferroelectric dielectric layer through deposition; carrying out rapid thermal annealing treatment in an N2 atmosphere; according to the method, plasma is adopted to process the upper surface of the ferroelectric film, and the oxygen vacancy distribution uniformity of the upper surface of the HZO film can be optimized, so that the wake-up effect is inhibited, and the performance of the ferroelectric film is improved; plasma is adopted to process the upper surface of the ferroelectric film, and generation of oxygen vacancies on the upper surface of the HZO film can be inhibited, so that electric leakage is reduced, the fatigue effect and the imprinting effect are inhibited, and the performance of the ferroelectric film is improved.

The invention belongs to the field of microelectronics, and particularly relates to a ferroelectric capacitor, a preparation method thereof and a three-dimensional ferroelectric memory array, and the ferroelectric capacitor comprises a substrate, a bottom electrode, a ferroelectric dielectric layer, a deoxidizing layer and a top electrode which are sequentially arranged from bottom to top; the ferroelectric medium layer is an Hf < 1-x > Zr < x > O < 2 > layer, 0 lt; xlt; the Hf-rich composition is realized by controlling the Hf: Zr super-cycle ratio of atomic layer deposition; the thickness of the ferroelectric medium layer is 1-6 nm, and the thickness of the bottom electrode is 0.1-5 nm. Compared with the prior art, the problems of polarization characteristic degradation caused by thinning of the ferroelectric layer in the hafnium-based ferroelectric capacitor and crosstalk in the FeRAM in the prior art are solved. According to the scheme, the oxygen vacancy concentration is accurately adjusted to inhibit the formation of a non-ferroelectric phase, so that the ultra-thin ferroelectric film can still maintain relatively high remanent polarization while the size is reduced, a storage window is effectively improved, and the wake-up requirement is reduced.

The invention provides an additive for optimizing the performance of a ferroelectric film material and a method for optimizing the energy storage performance of a sodium bismuth titanate-based ferroelectric film, and belongs to the technical field of electronic functional materials and devices. The ferroelectric film is prepared by using a sol-gel method, and a novel additive composed of N, N-dimethylacetamide, ethanolamine, lactic acid, ethylene glycol monomethyl ether and propionic acid is added in the process of preparing a film precursor solution. And spin-coating, drying, pyrolyzing and annealing the precursor solution to obtain a ferroelectric film material, and sputtering a gold electrode on the top of the ferroelectric film material. Compared with the ferroelectric film without the additive, the polarization performance and the energy storage performance of the ferroelectric film added with the additive are remarkably improved. Taking a 0.6 (Na0. 5Bi0. 5) TiO3-0. 4Bi (Mg0. 5Zr0. 5) O3 ferroelectric film as an example, under an electric field of 2000kV / cm, the maximum polarization is improved by about 70%, and the energy storage performance is improved by about 40%.

The invention discloses a dynamic light field regulation and control method based on a ferroelectric topological domain structure, and the method comprises the steps: selecting the ferroelectric topological domain structure formed in a ferroelectric film material as a light field regulation and control medium, and the ferroelectric topological domain structure is provided with dipole arrangement in spatial distribution; the ferroelectric topological domain structure is used for carrying out linear or nonlinear conversion on a light field of incident fundamental waves to generate a vortex light field or a vector light field, and domain distribution and dipole arrangement of the ferroelectric topological domain structure are adjusted in real time through external field driving modes such as a thermal field, an electric field or a pulse light field. And dynamically changing the phase, the amplitude and the polarization state of the vortex light field or the vector light field to realize real-time correlation response of the light field parameters and the topological domain structure. According to the method, the topological domain structure in the ferroelectric material is utilized, multi-dimensional regulation and control of the light field are achieved through rich dipole arrangement, and the method can also be applied to the fields of high-integration photonic circuits and reconfigurable high-capacity optical communication.

The invention discloses a high-durability FeFET based on a ferroelectric semiconductor channel and an anti-ferroelectric gate dielectric and a preparation method of the high-durability FeFET. A back gate electrode layer, an anti-ferroelectric gate dielectric layer, a ferroelectric semiconductor channel layer, a top gate high-k gate dielectric layer and a top gate electrode layer are sequentially stacked in a FeFET structure, and the anti-ferroelectric gate dielectric layer serves as a back gate dielectric layer; the top gate high-k gate dielectric layer serves as a top gate dielectric layer, the thickness of the back gate dielectric layer is larger than that of the top gate dielectric layer, and an asymmetric double-gate structure is formed. According to the invention, the hafnium oxide-based anti-ferroelectric thin film is used for replacing a ferroelectric thin film as a gate medium of the FeFET, so that the operation voltage is effectively reduced; no interface layer is arranged between the ferroelectric semiconductor channel and the anti-ferroelectric gate dielectric, so that durability failure caused by charge trapping and defect generation associated with the traditional FeFET and the interface layer is inhibited; the out-of-plane spontaneous polarization continuous, precise and adjustable characteristic of a ferroelectric semiconductor channel and the gate storage mode and the channel storage mode which are switched mutually based on the asymmetric double-gate structure of the FeFET are hopeful to enable the FeFET to show higher durability.

The invention relates to an HZO ferroelectric film with a controllable coercive field, a ferroelectric capacitor and a preparation method of the ferroelectric capacitor. The HZO ferroelectric film is provided with at least one microbeam gallium ion implantation region; and the gallium ion injection amount of each micro-beam gallium ion injection region is 1.3 * 10 < 14 >-5.2 * 10 < 14 > ion / cm < 2 >. According to the HZO ferroelectric film with the controllable coercive field provided by the invention, the coercive field of the HZO ferroelectric film can be accurately regulated and controlled by adjusting the gallium ion injection amount in the micro-beam gallium ion injection region, and meanwhile, the high polarization intensity, the structural uniformity and the electrical stability of the ferroelectric film can be maintained. Moreover, different injection amounts of gallium ions are injected into different regions of the HZO ferroelectric film, different coercive fields can be shown in different regions, the HZO ferroelectric film can be applied to a multi-valued memory, and the storage density is greatly improved.

The invention discloses a phase field simulation and analysis method for an anisotropic domain wall of a hafnium oxide-based ferroelectric film, and solves the problems that an existing method is difficult to reflect the influence of the anisotropy of the domain wall on domain evolution and polarization overturning dynamics and is associated with macroscopic electrical properties. Comprising the following steps: 1) determining a total energy equation and correlation coefficients; 2) establishing a gradient energy density equation based on domain wall anisotropy; 3) constructing and solving a control equation; 4) visualizing a simulation result; and 5) domain evolution and polarization flipping characteristics under different voltages are analyzed. According to the method, accurate simulation of the anisotropic domain wall and quantitative analysis of the migration behavior of the domain wall are realized, guidance is provided for experimenters to understand the influence rule of the anisotropic domain wall on the domain overturning characteristic and the macroscopic electrical property, the experiment cost is reduced, and the experiment efficiency is improved.

The invention discloses a doped hafnium oxide-based ferroelectric film based on doping distribution regulation and control and a preparation method and application thereof, an x-y-x structural unit is selected according to the doping concentration, an ALD technology is repeatedly adopted on a substrate to obtain [(Hf0. 5Zr0. 5O2) y-Alx-(Hf0. 5Zr0. 5O2) y] z ferroelectric films with different doping concentrations, x is the number of cycles of a dopant, y is the number of cycles of the dopant, y is the number of cycles of the dopant, y is the number of cycles of the dopant, y is the number of cycles of the dopant, and z is the number of cycles of the dopant. Y is the total number of cycles of hafnium oxide and zirconium oxide, z is the number of repetitions of an x-y-x structural unit, and the doping concentration of the ferroelectric film is x / 2y; a top electrode and a bottom electrode are plated on a [(Hf < 0.5 > Zr < 0.5 > O < 2 >) < y >-Al < x >-(Hf < 0.5 > Zr < 0.5 > O < 2 >) < y >] < z > ferroelectric film, and then high-temperature annealing treatment is performed to obtain the doped hafnium oxide-based ferroelectric film based on doping distribution regulation and control. According to the invention, the distribution of doped elements is accurately regulated and controlled, so that the insulating property, ferroelectric property and durability of the material are remarkably improved, and the requirements of future high-performance electronic devices are met. The technical innovation opens up a new direction for application of ferroelectric materials and promotes further development of related fields.

The invention relates to the technical field of semiconductors, in particular to a transistor with mechanical sensing and memory functions and a preparation method and application of the transistor. The semiconductor thin film layer is arranged on one side, close to the groove, of the substrate and covers the groove; the ferroelectric thin film layer is arranged on one side, deviating from the groove, of the semiconductor thin film layer and covers right above the groove; and the first electrode and the second electrode are respectively arranged at two ends of the semiconductor film layer and are in contact with the substrate. External force is applied to the ferroelectric film layer arranged right above the groove, so that an equivalent flexoelectric field induced by a strain gradient generated by the ferroelectric film layer under the action of the external force forms a force grid, and ferroelectric polarization of the ferroelectric film can be regulated and controlled through a flexoelectric effect; and due to the non-volatility of ferroelectric polarization in the ferroelectric film layer and the arrangement of the bottom groove, the characteristic of sensing memory response is realized, so that the transistor with the structure has mechanical sensing and memory functions at the same time.

The present invention relates to a display pixel circuit using ferroelectric thin-film transistors and a method of driving the same. More particularly, the present invention relates to a display pixel circuit in which a volatile switch function and a non-volatile memory function are selectively applied by using a plurality of ferroelectric thin-film transistors including a ferroelectric gate-insulating film having a high dielectric constant (high-k) and a method of driving the display pixel circuit.

A method for manufacturing a piezoelectric film deposition substrate (100) according to this present invention includes forming a piezoelectric film (3) on or above the lower electrode (2) with the mask (5) being attached on or above the lower electrode; forming an upper electrode (4) on the piezoelectric film with the mask being attached on or above the lower electrode; forming a the lower-electrode-exposed part (2a) by detaching the mask from the lower electrode; and subjecting the piezoelectric film to polarization by applying a voltage between the lower-electrode-exposed part and the upper electrode.

The present application discloses a phase field analysis method based on the influence of oxygen vacancies on hafnium oxide-based ferroelectric films, including: considering the influence of oxygen vacancy concentration on hafnium oxide-based ferroelectric films, determining the total energy equation; establishing the constitutive equations of various physical fields based on the influence of oxygen vacancies through the energy equation; determining the control equations of various physical fields; solving through the finite element method, deriving the weak form of the control equations of various physical fields based on the influence of oxygen vacancies, and establishing a phase field calculation model based on the influence of oxygen vacancies for hafnium oxide-based ferroelectric films according to the weak form of the equations, so as to simulate the domain structure cloud diagram and its phase transition law of polymorphic coexistence of hafnium oxide-based ferroelectric films under different oxygen vacancy concentrations. The present application can provide theoretical guidance on the influence of oxygen vacancies for experimenters during the experiment through the establishment of a calculation model, thereby effectively reducing the experimental cost, and having a preset range control value for the oxygen vacancy concentration used in the experiment.

The invention belongs to the field of semiconductors, and discloses a novel ferroelectric memcapacitor based on an MFIS structure and a preparation method thereof, a substrate of the novel ferroelectric memcapacitor comprises a first doped region and a second doped region, and the doping type of the first doped region is p-type; the insulating layer, the ferroelectric layer and the top electrode layer are arranged on the substrate from bottom to top and cover the first doped region of the substrate; an uncovered area on the surface of the substrate is a second doped area, and the doping type of the second doped area is n type; the bottom electrode layer is located in the second doped region of the substrate and is far away from the first doped region; the channel is located in the second doped region of the substrate and is close to the first doped region; the invention also provides a corresponding preparation method, according to the ferroelectric memcapacitor prepared by using the method, because the semiconductor layer has a PN junction depletion region, the ferroelectric film can be fully overturned by using a band-to-band tunneling mechanism without large voltage, and meanwhile, the capacitance of the depletion region of the PN junction on one side of the semiconductor is adjusted, so that a relatively high capacitance-to-switch ratio is obtained while low power consumption is ensured.

The invention provides a Bi < 1.8 > Sm < 0.2 > O < 3 > ferroelectric film as well as a preparation method and application thereof. The preparation method comprises the following steps: taking sapphire subjected to annealing treatment at the temperature of 1100-1300 DEG C as a substrate, bombarding a bismuth oxide samarium target material in a chamber by adopting pulse laser, and depositing on the substrate at the temperature of 450-600 DEG C to form the Bi1. 8Sm0. 2O3 ferroelectric film. The preparation method of the Bi1. 8Sm0. 2O3 ferroelectric film provided by the invention is simple to operate, the production cost of the ferroelectric film is low, a brand new method and thought are provided for the preparation of the Bi1. 8Sm0. 2O3 ferroelectric epitaxial film, and the prepared Bi1. 8Sm0. 2O3 ferroelectric epitaxial film has excellent crystallinity and ferroelectric property.

The invention relates to an ultrathin hafnium oxide ferroelectric film capacitor based on electrode optimization and a preparation method thereof, and the method can effectively inhibit the production of an interface dead layer and excessive oxygen vacancies at the bottom of an HYO ferroelectric film through constructing a capacitor with a six-layer structure of a substrate, a bottom electrode layer, an oxide intercalation layer, a metal layer, an HYO ferroelectric film layer and a top electrode layer. The HYO ferroelectric film layer is grown through an atomic layer deposition method, and a large-area high-quality ferroelectric film with good uniformity can be grown; the capacitor with a six-layer structure is rapidly annealed in an inert atmosphere, so that the formation of a ferroelectric orthogonal phase in the HYO ferroelectric film can be promoted, the ferroelectricity is improved, the coercive field and the leakage current are reduced, and the fatigue characteristic is enhanced; meanwhile, the whole preparation process is simple and controllable, and the prepared ferroelectric film is good in quality and has commercial production and application potential.

The invention relates to the technical field of semiconductor photoelectric detectors, in particular to a gallium oxide-based ultraviolet detector with a vertical structure and a preparation method of the gallium oxide-based ultraviolet detector. The detector comprises a bottom electrode, a substrate, a buffer layer, an epsilon-phase gallium oxide layer and a top electrode which are arranged from bottom to top, the buffer layer is nickel oxide; the substrate is a silicon substrate; the top electrode and the bottom electrode are used for applying bias voltage to realize polarization deflection of the epsilon-phase gallium oxide layer; the buffer layer is nickel oxide (111), and the thickness of the buffer layer is 1-50 nm. The method has the advantages that technical means such as doping, surface treatment or high-temperature annealing do not need to be introduced into the epsilon-phase gallium oxide thin film; positive and negative bias voltages are applied to the ferroelectric thin film material, and the electric dipoles are arranged along the direction of an electric field, so that the current regulation of a depolarization field on the device is realized, and the performance of the detector is effectively improved.

The embodiment of the invention discloses a hafnium oxide-based ferroelectric film doped in a calcium gap position and a preparation method. The method comprises the following steps: preparing a target material: mixing hafnium oxide and calcium oxide according to a set ratio, and grinding to obtain mixed raw material powder; calcining the mixed raw material powder for the first time; grinding the mixed raw material powder calcined for the first time, and performing compression molding to obtain a target material biscuit; calcining the target material biscuit for the second time to obtain the hafnium oxide-based ceramic target material doped in the calcium gap position; a commercial bottom electrode La0. 7Sr0. 3MnO3 target material is used as a first sputtering target, sputtering is carried out under a first set condition, and an LSMO bottom electrode thin film is obtained; taking the calcium gap position doped hafnium oxide-based ceramic target material as a second sputtering target, sputtering under a second set condition, and epitaxially growing on the LSMO bottom electrode film to form a calcium gap position doped hafnium oxide-based ferroelectric film; the chemical composition of the hafnium oxide-based ferroelectric film doped in the calcium gap position is CaxHf (1-x) O (2-x), x is 0.01-0.05, and calcium ions occupy the gap position of a hafnium oxide crystal lattice.

The invention provides a method for recovering a hafnium oxide-based ferroelectric erasing and writing mark phenomenon, which relates to the field of ferroelectric films, and comprises the step of applying bipolar electric pulses or unipolar electric pulses with the polarization direction opposite to that of data erasing and writing electric pulses to a hafnium oxide-based ferroelectric film device which is subjected to data erasing and writing after the electric pulses are applied to the hafnium oxide-based ferroelectric film device. By means of the method, the imprint offset field caused by data erasing and writing can be effectively recovered.

This invention discloses an electrode-free constrained annealed hafnium oxide-based ferroelectric thin film, its preparation method, and its application. The method employs ALD technology to alternately deposit a predetermined number of hafnium oxide layers on a substrate. 0.5 Zr 0.5 O2 thin film and a layer of Al2O3 thin film were used to obtain Al with different doping concentrations. x -(Hf) 0.5 Zr 0.5 O2) y Ferroelectric thin films, where x represents the number of Al2O3 layers deposited using ALD, and y represents the number of Hf layers deposited using ALD. 0.5 Zr 0.5 The number of O2 layers; for the obtained Al x -(Hf) 0.5 Zr 0.5 O2) y Ferroelectric thin films are subjected to high-temperature annealing to obtain Al. x -(Hf) 0.5 Zr 0.5 O2) y Ferroelectric thin film samples; for the obtained Al x -(Hf) 0.5 Zr 0.5 O2) y A hafnium oxide-based ferroelectric thin film was obtained by depositing a top electrode and a bottom electrode onto a ferroelectric thin film sample. This invention improves the performance of annealed ferroelectric thin films without electrode constraint, deepens the understanding of the ferroelectric principle of HfO2 thin films, and promotes the development of the field of novel practical ferroelectric thin films.