40results about How to "Good ferroelectric properties" patented technology

There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.

A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.

The invention discloses an anhydrous zinc tartrate ferroelectric function material, the molecular formula of which is Zn(C4H4O6), and the ferroelectric function material can pass through white powder with purity of no less than 99 percent of 100 meshes, the heat quantitative temperature of the white powder is 350 DEG C, parameters of the ferroelectric properties of the ferroelectric function material is respectively as follows: Ps=0.43 mu C.cm<-2>, 2Pr=0.73 mu C.cm<-2>, 2Ec=0.47 kV.cm<-1>; thereby, the anhydrous zinc tartrate ferroelectric function material has better ferroelectric properties and thermal stability; the invention also discloses a preparation method of the ferroelectric function material, which can realize the nucleus formation and growth processes of the prophase product of the anhydrous zinc tartrate through controlling the concentration and proportion of the materials, the adding speed of the reactants, the stirring time, the temperature of the reaction system, pH control of the solution and the like, in addition, dehydration treatment is then carried out, and anhydrous zinc tartrate ferroelectric power with higher purity and good performance can be obtained.

The invention provides a method for manufacturing a PNbZT ferroelectric thin film and a composite electronic component. In this method, a composition for forming a Nb-free PZT ferroelectric thin film is coated on a lower electrode (11) formed on a substrate (10), pre-sintered, and fired to crystallize it, thereby A crystallization promoting layer (12) with a thickness of 45 to 90 nm is formed, and a composition for forming a PNbZT ferroelectric thin film is coated on the crystallization promoting layer (12) formed above to form a coating film (13a) of PNbZT. After the coating film (13a) is pre-sintered, it is fired to crystallize it, thereby forming a PNbZT ferroelectric thin film on the above-mentioned lower electrode (11), wherein, in the PNbZT ferroelectric thin film, the 4-10 atomic % of Nb is contained in the total 100 atomic % of Zr and Ti contained perovskite B-site atoms.

The invention discloses a hydrate D-cerous tartrate ferroelectric functional material and a preparation method thereof. The ferroelectric functional material has a molecular formula of [Ce2(H2O)]3(D-C4HO6)3].3H2O, is triclinic white powder with the purity of not lower than 99% and is a C1 polar point group structure; the ferroelectric characteristic parameters are as follows: the remanent polarization 2Pr=0.019 micro C.cm<-2>, the coercive electric field 2Ec=1.139kv.cm<-2>, and the saturated polarization intensity Ps=0.233 micro C.cm<-2>; the powder lattice parameters are shown in the specification; the polarizability value of the ferroelectric functional material is similar to that of a common ferroelectric rochelle salt; and the ferroelectric functional material has excellent ferroelectric characteristics. The preparation method has the advantages of less flow, simplicity in process, low requirement on equipment, no pollution, low cost and easiness for industrialization.