Method for fabricating ferroelectric memory device

A ferroelectric memory, ferroelectric storage technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, capacitors, etc., can solve the problems of easy oxidation, insufficient titanium in PZT, etc.

Inactive Publication Date: 2009-09-09
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In particular, the platinum-catalyzed reduction reaction, which easily oxidizes PZT, thus causes unacceptable defects at the interface be

Method used

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  • Method for fabricating ferroelectric memory device
  • Method for fabricating ferroelectric memory device
  • Method for fabricating ferroelectric memory device

Examples

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Embodiment Construction

[0015] Consistent with the object of the present invention, a method of manufacturing a ferroelectric memory device will be specifically described below. Figures 1A-1J is a cross-sectional view of a semiconductor substrate at a select process stage for a ferroelectric capacitor. see Figure 1A , providing a semiconductor substrate 100 having a transistor 104 and a first insulating layer 106 on an active region thereof. The active region is surrounded by a device isolation region 102 having a predetermined pattern. Transistor 104 includes a gate with an insulating capping layer, and a pair of source / drain regions extending from lateral edges of the gate to a predetermined depth within the active region.

[0016] see Figure 1B , forming an adhesion / barrier layer 108 on the first insulating layer 106 . The adhesion / barrier layer 108 is used to enhance the adhesion between the bottom electrode of the subsequent ferroelectric capacitor and the first insulating layer 106 . Add...

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Abstract

A ferroelectric capacitor with a ferroelectric film having a relatively larger amount of titanium constituent than zirconate constituent improves ferroelectric characteristics. The method for fabricating the ferroelectric capacitor includes the step of performing a heat treatment in an oxygen atmosphere after forming a contact opening in an insulating layer which covers an already formed ferroelectric capacitor. This heat treatment in an oxygen atmosphere can minimize undesirable side effects resulting from a platinum electrode oxidizing the ferroelectric film components.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a ferroelectric storage device and a manufacturing method thereof. Background technique [0002] Modern data processing systems require random access to a substantial portion of the information stored in their memory to ensure fast access to such information. Due to the high-speed operation of memories performed by this semiconductor technology, Ferroelectric Random Access Memory (FRAM) has been developed, and FRAM has the significant advantage of being non-volatile because a ferroelectric capacitor consists of a pair of capacitor plates and Obtained with a ferroelectric material sandwiched between two polar plates with two different stable polarization states that can be defined by a hysteresis loop described by plotting the degree of polarization against the applied voltage. [0003] Recently, the application of this ferroelectric material has reached the level of commercial applicati...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L27/115H01L21/8247H01L21/8242H01L21/8246H01L27/105H01L27/108H01L29/78H01L29/788H01L29/792
CPCH01L27/11502H01L28/55H10B53/00H01L29/78
Inventor 郑东镇金奇南
Owner SAMSUNG ELECTRONICS CO LTD
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