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Method for fabricating ferroelectric memory device

A ferroelectric memory, ferroelectric storage technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, capacitors, etc., can solve the problems of easy oxidation, insufficient titanium in PZT, etc.

Inactive Publication Date: 2009-09-09
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In particular, the platinum-catalyzed reduction reaction, which easily oxidizes PZT, thus causes unacceptable defects at the interface between each electrode and PZT, resulting in insufficient titanium (easy to oxidize) of PZT, which eventually leads to reliability problems

Method used

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  • Method for fabricating ferroelectric memory device
  • Method for fabricating ferroelectric memory device
  • Method for fabricating ferroelectric memory device

Examples

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Embodiment Construction

[0015] Consistent with the object of the present invention, a method of manufacturing a ferroelectric memory device will be specifically described below. Figures 1A-1J is a cross-sectional view of a semiconductor substrate at a select process stage for a ferroelectric capacitor. see Figure 1A , providing a semiconductor substrate 100 having a transistor 104 and a first insulating layer 106 on an active region thereof. The active region is surrounded by a device isolation region 102 having a predetermined pattern. Transistor 104 includes a gate with an insulating capping layer, and a pair of source / drain regions extending from lateral edges of the gate to a predetermined depth within the active region.

[0016] see Figure 1B , forming an adhesion / barrier layer 108 on the first insulating layer 106 . The adhesion / barrier layer 108 is used to enhance the adhesion between the bottom electrode of the subsequent ferroelectric capacitor and the first insulating layer 106 . Add...

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Abstract

A ferroelectric capacitor with a ferroelectric film having a relatively larger amount of titanium constituent than zirconate constituent improves ferroelectric characteristics. The method for fabricating the ferroelectric capacitor includes the step of performing a heat treatment in an oxygen atmosphere after forming a contact opening in an insulating layer which covers an already formed ferroelectric capacitor. This heat treatment in an oxygen atmosphere can minimize undesirable side effects resulting from a platinum electrode oxidizing the ferroelectric film components.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a ferroelectric storage device and a manufacturing method thereof. Background technique [0002] Modern data processing systems require random access to a substantial portion of the information stored in their memory to ensure fast access to such information. Due to the high-speed operation of memories performed by this semiconductor technology, Ferroelectric Random Access Memory (FRAM) has been developed, and FRAM has the significant advantage of being non-volatile because a ferroelectric capacitor consists of a pair of capacitor plates and Obtained with a ferroelectric material sandwiched between two polar plates with two different stable polarization states that can be defined by a hysteresis loop described by plotting the degree of polarization against the applied voltage. [0003] Recently, the application of this ferroelectric material has reached the level of commercial applicati...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L27/115H01L21/8247H01L21/8242H01L21/8246H01L27/105H01L27/108H01L29/78H01L29/788H01L29/792
CPCH01L27/11502H01L28/55H10B53/00H01L29/78
Inventor 郑东镇金奇南
Owner SAMSUNG ELECTRONICS CO LTD
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