Preparing technology of bismuth-layer-structure K0.5Bi4.5Ti4O15 crystal

A preparation process, bismuth layered technology, applied in the field of ferroelectric functional crystal materials, can solve problems such as domain inversion difficulties, and achieve the effects of easy control of uniformity, reduced defect concentration and impurity concentration, and short growth cycle

Inactive Publication Date: 2016-11-09
WUHAN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to achieve domain inversion using mechanical force as the driving force.
As far as we know, for K 0.5 Bi 4.5 Ti 4 o 15 domain research has not been reported, we realize ferroelectric domain inversion by electric field and mechanical force, the present invention discloses applying mechanical force to realize ferroelectric domain inversion phenomenon for the first time, for studying the piezoelectric effect inside ferroelectric material, electro-induced stretching effect, Maxwell stress effect is of great significance

Method used

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  • Preparing technology of bismuth-layer-structure K0.5Bi4.5Ti4O15 crystal
  • Preparing technology of bismuth-layer-structure K0.5Bi4.5Ti4O15 crystal
  • Preparing technology of bismuth-layer-structure K0.5Bi4.5Ti4O15 crystal

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A bismuth layered structure K 0.5 Bi 4.5 Ti 4 o 15 Crystal preparation process, concrete steps are as follows:

[0026] (1) will Bi 2 o 3 、K 2 CO 3 、TiO 2 Weigh the ingredients according to the molar ratio of 1:1:4, Bi 2 o 3 and K 2 CO 3 Excessive 5% to compensate for the loss of Bi and K elements during the thermal evaporation process. Mix the raw materials evenly and compact them into solid blocks, heat them in a muffle furnace to 750°C for 10 hours, and take out the polycrystalline material for grinding after the furnace cools down. Form into powder and compact it for secondary sintering. The secondary sintering temperature is 910°C for 2 hours. After the furnace body cools down, take it out to obtain polycrystalline material;

[0027] (2) Cut and polish the polycrystalline material to obtain a polycrystalline raw material rod, place the polycrystalline raw material rod in the lower part of the hollow platinum tube, the tube wall is in good contact with the...

Embodiment 2

[0031] A bismuth layered structure K 0.5 Bi 4.5 Ti 4 o 15 Crystal preparation process, concrete steps are as follows:

[0032] (1) will Bi 2 o 3 、K 2 CO 3 、TiO 2 Weigh the ingredients according to the molar ratio of 1:1:4, Bi 2 o 3 and K 2 CO 3 Excessive 5% to compensate for the loss of Bi and K elements during the thermal evaporation process. Mix the raw materials evenly and compact them into solid blocks, heat them in a muffle furnace to 750°C for 10 hours, and take out the polycrystalline material for grinding after the furnace cools down. It is powdered, compacted, and subjected to secondary sintering. The secondary sintering temperature is 910° C., and the sintering time is 2 hours. After the furnace cools down, the polycrystalline material is taken out.

[0033] (2) Cut and polish the polycrystalline material to obtain a polycrystalline raw material rod, place the polycrystalline raw material rod in the lower part of the hollow platinum tube, the tube wall is...

Embodiment 3

[0036] With the K that embodiment 1~2 makes 0.5 Bi 4.5 Ti 4 o 15 The crystal was used as the target material, and the pulsed laser deposition method was used to deposit K 0.5 Bi 4.5 Ti 4 o 15 Thin film, the selected substrate is Pt / Ti / SiO 2 / Si, the atmosphere is oxygen, the oxygen partial pressure is 120mTorr, the heating temperature is 550°C, and the deposition time is 40-60min.

[0037] Such as Figure 5 , is the ferroelectric domain structure of the thin film prepared in Example 3, where the figure (a) is K 0.5 Bi 4.5 Ti 4 o 15 The PFM morphology of the crystal, Figure (b) shows the corresponding micro-region under the condition of -12V electric field, and the obvious domain wall structure can be observed, Figure (c) shows the light and dark contrast of the domain wall under the condition of +12V voltage, which is Due to the polarization reversal of the domain wall under the action of an electric field, Figure (d) shows the polarization reversal phenomenon afte...

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Abstract

The invention belongs to the field of ferroelectric function crystal materials, and particularly relates to a preparing technology of a bismuth-layer-structure K0.5Bi4.5Ti4O15 crystal. The preparing technology includes the steps that a polycrystal material is prepared; the polycrystal material is pulverized to be pressed a solid block again, the solid block is subjected to secondary sintering, polished and cut, and a polycrystal raw material rod is obtained; the polycrystal raw material rod is put at the lower portion of a hollow platinum tube, then put into a crystal growing furnace, heated in the argon atmosphere and melted, a platinum wire is led, and nucleation and growth of the crystal are carried out; the crystal completely grows to be slowly moved away fusion intervals, the platinum wire is taken out after stabilization is carried out for 1 h to 2 h, and bismuth-layer-structure K0.5Bi4.5Ti4O15 crystal is obtained; the bismuth-layer-structure K0.5Bi4.5Ti4O15 crystal is annealed at the high temperature. The K0.5Bi4.5Ti4O15 crystal prepared with the technology is good in evenness, and has the good ferroelectric characteristics.

Description

technical field [0001] The invention belongs to the research field of ferroelectric functional crystal materials, and in particular relates to a bismuth layered structure K 0.5 Bi 4.5 Ti 4 o 15 Crystal preparation process. Background technique [0002] A ferroelectric crystal refers to a type of crystal that has spontaneous polarization, and the direction of the spontaneous polarization can be changed by an external electric field. Ferroelectric crystals and thin films are widely used in memory storage devices, microelectromechanical systems, surface acoustic wave devices, tunable capacitors, remote sensing, etc. Among them, K 0.5 Bi 4.5 Ti 4 o 15 Crystals have attracted much attention due to their good anti-polarization fatigue properties, large remanent polarization strength and piezoelectric coefficient. [0003] The crystal with bismuth layered structure of Aurivillius phase was first discovered by scholars such as Aurivillius. Its general structural formula is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/32C30B28/02C30B33/02C30B13/00
CPCC30B13/00C30B28/02C30B29/32C30B33/02
Inventor 赵洪阳蔡康马志斌黄志登邓全程振祥木村秀夫
Owner WUHAN INSTITUTE OF TECHNOLOGY
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