SnSe-based thermoelectric material and preparation method thereof

A technology of thermoelectric material and zone melting method, which is applied in the directions of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, polycrystalline material growth, etc. The problems of poor performance and insignificant difference in ZT can achieve the effects of excellent thermoelectric performance, low cost, and obvious preferential orientation.
CN105047809AActive Publication Date: 2015-11-11NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Publication Date
2015-11-11

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Abstract

The invention discloses an SnSe-based thermoelectric material and a preparation method thereof. The preparation method includes steps: S100 weighing reaction raw material according to the stoichiometric ratio of the SnSe-based thermoelectric material; S200 refining the reaction raw material through a melt-refining process to obtain SnSe-based thermoelectric material ingots; and S300 placing SnSe-based thermoelectric material ingots obtained from the S200 in a zone smelting furnace and growing polycrystalline SnSe-based thermoelectric material through a zone melting method. The SnSe-based thermoelectric material obtained through the method is preferential and has better thermoelectric performance. Compared with a method for preparing monocrystalline SnSe-based thermoelectric material, the method is simple and is short in growth period, low in cost, and suitable for mass industrial production.
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Description

technical field

[0001] The invention relates to the field of thermoelectric materials, in particular to a SnSe-based thermoelectric material and a preparation method thereof. Background technique

[0002] Thermoelectric materials are functional materials that use the transport of phonons and carriers to realize the direct mutual conversion of thermal energy and electrical energy. Generally, the dimensionless thermoelectric figure of merit (ZT value) is used to characterize the performance of thermoelectric materials, where ZT=S 2 Tσ / κ, S is the Seebeck coefficient, σ is the electrical conductivity, κ is the thermal conductivity, and T is the temperature. Generally, the larger the ZT value, the higher the thermoelectric conversion efficiency. The difficulty in increasing the ZT value is that the parameters that determine this value are interrelated. At present, the main ways to improve the ZT value are: to realize the thermal conductivity of the independent lattice by intr...

Claims

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