SnSe-based thermoelectric material and preparation method thereof

A technology of thermoelectric material and zone melting method, which is applied in the directions of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, polycrystalline material growth, etc. The problems of poor performance and insignificant difference in ZT can achieve the effects of excellent thermoelectric performance, low cost, and obvious preferential orientation.

Active Publication Date: 2015-11-11
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the poor mechanical properties of layered single crystals, and the long preparation time and high energy consumption make it difficult to apply to large-scale industrial production.
[0004] S. Sassi et al. prepared polycrystalline SnSe with a certain orientation by vacuum melting combined with spark plasma sintering. Its thermoelectric properties have certain anisotropy in the direction perpendicular to the pressure and parallel to the direction of pressure, but the The ZT difference on is not obvious, the maximum ZT value is only 0.5
Q.zhang et al. prepared polycrystalline SnSe by smelting method combined with hot pressing and sintering, which also has the problem of poor orientation, and the maximum ZT value is only 0.82 at 500 °C.

Method used

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  • SnSe-based thermoelectric material and preparation method thereof
  • SnSe-based thermoelectric material and preparation method thereof
  • SnSe-based thermoelectric material and preparation method thereof

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preparation example Construction

[0033] Specifically, the preparation method of the SnSe-based thermoelectric material of the present invention comprises the following steps:

[0034] S100, weighing the reaction raw materials according to the stoichiometric ratio of the SnSe-based thermoelectric material.

[0035] The selection principle of the reaction raw material in the present invention is to try not to introduce irrelevant elements. Usually, the simple substance of the corresponding element in the SnSe-based thermoelectric material or the compound formed by two or more elements in the SnSe-based thermoelectric material is selected as the reaction raw material. For example, when the SnSe-based thermoelectric material is SnSe 0.9 Br 0.1 When, Sn simple substance, Se simple substance and SnBr can be selected 2 compound as the starting material for the reaction. Preferably, the purity of the reaction raw materials is greater than or equal to 99%.

[0036] S200, using a smelting method to refine the react...

Embodiment 1

[0063] (1) taking Sn particles and Se particles as reaction raw materials according to the stoichiometric ratio of SnSe;

[0064] (2) the reaction raw material that weighs in the step (1) is packed in the clean and dry first reaction vessel, the first reaction vessel is evacuated to 10 -5 Pa, then utilize an oxyacetylene flame to seal the opening of the first reaction vessel;

[0065] (3) Place the sealed first reaction vessel in a swing furnace, heat up to 950°C at a rate of 1°C / min, and then keep it at 950°C for 1h, wherein the swing frequency of the swing furnace is 5r / min, The angle is 60°;

[0066] (4) After the smelting is completed, turn off the power supply of the swing furnace, take out the first reaction vessel after being cooled to 800°C with the furnace, and cool it to room temperature in the air to obtain the SnSe ingot;

[0067] (5) the first reaction vessel that SnSe ingot is housed is placed in the second reaction vessel, the second reaction vessel is evacuat...

Embodiment 2

[0074] (1) According to Sn 1.2 The stoichiometric ratio of Se takes Sn particles and Se particles as reaction raw materials;

[0075] (2) the reaction raw material that weighs in the step (1) is packed in the clean and dry first reaction vessel, the first reaction vessel is evacuated to 10 -6 Pa, then utilize an oxyacetylene flame to seal the opening of the first reaction vessel;

[0076] (3) Place the sealed first reaction vessel in a swing furnace, heat up to 900°C at a rate of 2°C / min, and then keep it at 900°C for 8 hours, wherein the swing frequency of the swing furnace is 10r / min, and the swing frequency is 10r / min. The angle is 20°;

[0077] (4) After the smelting is completed, turn off the power supply of the swing furnace, and cool the first reaction vessel to room temperature with the furnace to obtain Sn 1.2 Se ingot;

[0078] (5) will be equipped with Sn 1.2The first reaction vessel of the Se ingot is placed in the second reaction vessel, and the second reacti...

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Abstract

The invention discloses an SnSe-based thermoelectric material and a preparation method thereof. The preparation method includes steps: S100 weighing reaction raw material according to the stoichiometric ratio of the SnSe-based thermoelectric material; S200 refining the reaction raw material through a melt-refining process to obtain SnSe-based thermoelectric material ingots; and S300 placing SnSe-based thermoelectric material ingots obtained from the S200 in a zone smelting furnace and growing polycrystalline SnSe-based thermoelectric material through a zone melting method. The SnSe-based thermoelectric material obtained through the method is preferential and has better thermoelectric performance. Compared with a method for preparing monocrystalline SnSe-based thermoelectric material, the method is simple and is short in growth period, low in cost, and suitable for mass industrial production.

Description

technical field [0001] The invention relates to the field of thermoelectric materials, in particular to a SnSe-based thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric materials are functional materials that use the transport of phonons and carriers to realize the direct mutual conversion of thermal energy and electrical energy. Generally, the dimensionless thermoelectric figure of merit (ZT value) is used to characterize the performance of thermoelectric materials, where ZT=S 2 Tσ / κ, S is the Seebeck coefficient, σ is the electrical conductivity, κ is the thermal conductivity, and T is the temperature. Generally, the larger the ZT value, the higher the thermoelectric conversion efficiency. The difficulty in increasing the ZT value is that the parameters that determine this value are interrelated. At present, the main ways to improve the ZT value are: to realize the thermal conductivity of the independent lattice by intr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H01L35/16C30B13/00C30B29/52
Inventor 付亚杰蒋俊秦海明梁波王雪刘柱张烨江浩川
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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