87 results about "Zone melting" patented technology

The invention discloses a grinding and polishing processing method of an ultra-precise YIG (yttrium iron garnet) single crystal, which is suitable for a planar YIG (yttrium iron garnet) single crystal (circle) prepared by a liquid phase epitaxy method, a molten salt method and a floating zone melting method, and comprises the following steps: grinding the YIG single crystal, and controlling the thickness and the total thickness deviation (TTV) of the crystal; rough polishing is carried out on the YIG single crystal, and subsurface damage of the wafer is eliminated; and finally, carrying out ultra-precision polishing on the YIG crystal to realize surface planarization with sub-nano-scale surface roughness. According to the method, the surface roughness of the yttrium iron garnet single crystal can be controlled below 1nm.

The invention discloses a multi-scale research method for improving the separation efficiency of impurities in an ultra-pure metal system. The multi-scale research method comprises the following steps that tellurium crystals are prepared through a zone melting method, and purity and crystal face orientation analysis is conducted; simulation analysis is carried out in combination with experimental data, firstly, phase field simulation is used for analyzing conversion of an interface structure and grain competition-driven orientation in the solidification process, then the density functional theory is used for calculating and analyzing adsorption energy of solid phases on different crystal faces at the solid-liquid interface to impurity atoms, and the structure-activity relationship between crystal face orientation and impurity separation efficiency is obtained. Finally, the crystal face and the preferred orientation degree of the tellurium crystal are regulated and controlled through a Bridgman method, and the impurity separation efficiency is improved. By means of the mode, the key factors influencing trace impurity atom separation can be obtained, the universal method for improving the impurity separation efficiency in the ultra-pure metal system is obtained, and development of the non-ferrous metal metallurgy field is promoted.

The invention belongs to the field of high-purity indium preparation, and provides a method for preparing high-purity indium based on ultrasonic vacuum distillation-electromagnetic pulse zone melting purification, the method combines vacuum distillation and zone melting purification technologies, ultrasonic waves are applied in the vacuum distillation process to assist in removing low-boiling-point impurities such as Cd, Zn and the like, and the purity of the high-purity indium is improved. In the zone melting process, pulse current is applied through an induction coil to assist in removing impurities mainly including Sn, Pb and Fe, and stable preparation of a high-purity indium product with the purity larger than or equal to 99.9995% and the oxygen content smaller than or equal to 2 ppm is achieved by screening and controlling technological conditions. According to the method, the requirement for the purity of the raw material indium is low, and the preparation cost of a high-purity indium product can be reduced.

The invention discloses a low-melting-point metal vacuum distillation-zone melting impurity removal device, the interior of the device is divided into a vacuum distillation zone and a zone melting zone which are communicated, the vacuum distillation zone comprises a graphite crucible and a special-shaped condensation cover, the inner side wall of the special-shaped condensation cover is provided with a triangular airflow separator, and the inner bottom wall of the special-shaped condensation cover is provided with a plane airflow splitter plate; a bottom outlet is communicated with a flow guide pipe and is connected with a zone melting pipe of the zone melting zone through a flow guide branch pipe; the method comprises the steps that firstly, low-melting-point metal is added, and all parts are installed; 2, carrying out vacuum distillation on the low-melting-point metal; and 3, carrying out regional purification on the vacuum distillation material in the regional melting pipe. According to the device, the vacuum distillation zone and the zone melting zone which are communicated are arranged, so that zone melting impurity removal is directly carried out after low-melting-point metal is subjected to vacuum distillation impurity removal, and the defects of air oxidation, pollution introduction, long charging time and the like caused by segmented charging are overcome; the method enhances the impurity removal effect and is suitable for the field of metal purification.

The invention discloses a 7N single crystal copper preparation process based on zone melting and crystal orientation control, which specifically comprises the following steps: S1, raw material pretreatment: purifying 4N copper to 5N grade by adopting electrolytic refining of a nitric acid system, and the carbon content after acid pickling is less than or equal to 1ppm; the invention relates to the technical field of metal material preparation. According to the 7N single crystal copper preparation process based on zone melting and crystal orientation control, impurities in a material are redistributed in a melting zone through local heating, so that separation and removal of the impurities are achieved, in single crystal copper preparation, zone melting can remarkably reduce the content of the impurities in copper, the purity of the copper is improved, and the yield of the 7N single crystal copper is improved. By accurately controlling parameters such as the temperature gradient and the cooling rate in the smelting and solidification process, optimization of crystal orientation is achieved, single crystal copper with an ideal crystal structure can be obtained, the performance of the single crystal copper is improved, and impurities can be removed and crystal defects can be reduced through zone smelting; and crystal orientation control can optimize the crystal structure and improve the performance.

The invention discloses a zone-melting high-frequency coil with a water passing structure. A zone-melting method high-frequency coil with a water passing structure comprises a high-frequency coil, a first installation part and a second installation part which are arranged side by side are arranged on the high-frequency coil, the first installation part is detachably and electrically connected with the end of a copper electrode, and a water inlet in butt joint with an annular cooling channel is formed in the second installation part; the water inlet copper rod comprises a copper pipe part used for penetrating through the copper electrode and an exposed butt joint part used for exposing the copper electrode, and the exposed butt joint part is detachably connected with the second mounting part; the copper pipe part is sleeved with a first insulating ring, the first insulating ring abuts against the exposed butt joint part, and the first insulating ring is clamped between the water inlet copper rod and the copper electrode; the end, away from the exposed butt joint part, of the copper pipe part extends out of a copper electrode, and the end, away from the exposed butt joint part, of the copper pipe part is sleeved with a second insulating ring. A water inlet cooling system and a conductive function are realized, the service life of the high-frequency coil is prolonged, and the effect is improved.

The invention relates to the technical field of purification, in particular to vacuum distillation zone smelting purification equipment for deeply removing high-purity tellurium impurities and a production process. The vacuum distillation zone smelting purification equipment comprises a purification tank cover and a purification tank body; a movable bracket is arranged in the purification tank body; an induction line group is fixedly mounted on the movable bracket; a raw material cylinder is arranged in the purification tank body; a clamping mechanism and a turnover mechanism are arranged on the mounting plate; the clamping mechanism can clamp the raw material barrel; a reciprocating heating mechanism is arranged in the purification tank body and can drive the movable bracket to do reciprocating translation so as to drive the induction line group to move along the length direction of the raw material barrel; when the induction line group moves to the tail end of the stroke, the turnover mechanism can drive the turnover raw material barrel; through mutual cooperation of the reciprocating heating mechanism and the turnover mechanism, the process of heating mineral aggregate by the induction line group is relatively continuous (the interval time is short), impurities are gathered on one side of the raw material cylinder, and the product loss can be effectively reduced, so that the purification efficiency is indirectly improved.

The high-purity graphite boat cleaning method comprises the following steps: S1, putting a used high-purity graphite boat into a zone melting furnace; s2, oxygen is introduced, heating is conducted to 600-940 DEG C, and the temperature is kept for 30-60 min; s3, after keeping is finished, heating of the zone melting furnace is stopped, the high-purity graphite boat is taken out after being naturally cooled to the room temperature, the high-purity graphite boat is put into a cleaning solution to be subjected to ultrasonic cleaning for 30-60 min, and the cleaning solution is prepared from hydrofluoric acid, nitric acid and pure water according to the volume ratio of 1: (8-10): (500-600); s4, taking out the high-purity graphite boat, and ultrasonically washing the high-purity graphite boat with pure water for 30-60 minutes; s5, blow-drying the high-purity graphite boat with nitrogen, then putting the high-purity graphite boat into a zone melting furnace, vacuumizing to 1 * 10 <-2 >-1 * 10 <-3 > Pa, exhausting while pumping, keeping the pressure to 1 * 10 <-2 >-1 * 10 <-3 > Pa, heating to 400-650 DEG C, and keeping for 1-2 hours; and S6, after keeping is finished, the zone melting furnace stops heating, and after the high-purity graphite boat is naturally cooled to the room temperature, the high-purity graphite boat can be taken out for use.

The invention relates to the technical field of silicon slag recovery and purification, and particularly discloses a silicon slag refining and purifying process which comprises the following steps: mixing silicon slag with oxide activated functional pellets, and performing synchronous activation and reduction heat treatment in a weak reducing atmosphere at 1350-1450 DEG C to realize efficient separation of a slag phase and a silicon-rich phase; and deeply removing impurities through vacuum induction melting and electron beam zone melting to obtain the high-purity silicon ingot with the purity higher than 99.999%. The oxide activation functional pellet is of a core-shell structure with a reducing carbon core and an oxide shell, controllable and efficient in-situ oxidation and slagging reaction can be achieved, impurities such as Al, Fe, P and S in silicon slag are oxidized in situ through active oxygen provided by the pellet and captured into a low-melting-point slag phase, systematic and targeted purification of the silicon slag with complex components is achieved, and the purpose of purifying the silicon slag with the complex components is achieved. The method has the advantages of wide raw material adaptability, high purification efficiency, good process flow integration degree and the like, and successfully converts the silicon slag solid waste into a high-value material.

This invention belongs to the field of thermoelectric semiconductor materials technology, and relates to a bismuth telluride-based thermoelectric material, its preparation method, and its application. This invention obtains Bii through processes such as melt tumbling, zone melting, crushing and pressing, and hot extrusion molding. 0.48 Sb 1.52 Te3+3 wt%Te+ x wt% Cu₂Se, 0≤x≤0.1, has a room temperature carrier concentration of (3.1~5.5)×10⁻⁶. 19 cm ‑3 Electrical conductivity at room temperature is 770~1553 S / cm; thermal conductivity is 0.96~0.97 W / m². ‑1 K ‑1 μ W / k l The value is 0.15 m 3 KV ‑1 s ‑1 W ‑1 Thermoelectric figure of merit zT Not less than 1.0 (300~400 K). Specifically, it is produced by combining hot extrusion with Cu2Se doping. The hot extrusion process is used to optimize the grain orientation, form a dense microstructure, and reduce the thermal resistance of grain boundaries. It is suitable for industrial waste heat recovery and micro-refrigeration devices.

According to the thermodynamic calculation-based multi-element alloy suspension zone melting component distribution prediction method disclosed by the invention, based on thermodynamic phase diagram calculation and unbalanced solidification numerical model construction, a distribution rule of each alloy element in a solid phase and a liquid phase is determined according to real-time melting zone components; on the basis, quantitative prediction of component distribution of the multi-component alloy bar after smelting in the suspension zone is achieved through movement of the melting zone, and the problem that due to the fact that an existing model uses an approximately-simplified constant distribution coefficient, prediction deviation of solidification components of a multi-component alloy system is large is solved. The calculation method is simple and convenient, the test process of long time consumption and high cost of multi-time suspension zone smelting is avoided, the test workload is reduced, the process optimization process is accelerated, and the cost of repeated tests is reduced.

The invention relates to the field of zone melting furnaces, in particular to zone melting furnace single crystal clamping equipment which comprises a base, the middle of the base is arranged in a penetrating mode, a plurality of sliding grooves are formed in the circumferential array of the upper surface of the base, each sliding groove penetrates to the middle penetrating position of the base in the radial direction of the base, and a sliding plate is arranged in each sliding groove. The end, close to the middle of the base, of each sliding plate is fixedly connected with an arc-shaped clamping plate. A guide rod is arranged on the upper surface of each sliding plate; a rotating disc is arranged above the base, the middle of the rotating disc is arranged in a penetrating mode, a plurality of arc-shaped extrusion holes are formed in the rotating disc in a circumferential array mode, and the extrusion holes are arranged on the outer rings of the guide rods in a sleeving mode; according to the crystal growth device, the designed rotating disc synchronously extrudes the multiple guide rods, the multiple guide rods synchronously drive the clamping plates to clamp the crystal and provide support for the whole crystal, and swing generated in the crystal growth process can be reduced in the crystal growth process, so that the crystal growth stability is improved, and smooth crystal growth is guaranteed.

The utility model provides a thermal insulation cylinder for zone melting and a zone melting furnace with the thermal insulation cylinder. The thermal insulation cylinder for zone melting comprises a cylindrical body, a supporting layer is arranged on the outer side of the cylindrical body, an isolating layer is arranged on the inner side of the cylindrical body, and a thermal insulation layer is arranged between the supporting layer and the isolating layer. The device has the beneficial effects that the heat loss is reduced, the heating power requirement is reduced, the heat preservation effect is improved, a uniform temperature gradient is maintained in a melting region, a larger temperature gradient is prevented from being generated between the center and the periphery of the large-diameter single crystal, the thermal stress of the large-diameter single crystal is more uniform, dislocation or edge breakage is reduced, and the production efficiency is improved. And the growth stability and the finished product quality of monocrystalline silicon can be improved.

To provide a single crystal having low impedance.SOLUTION: A method for manufacturing a single crystal being a lithium cobaltate single crystal obtained by doping metal atoms A selected from a group consisting of alkaline earth metal and transition metal having a valence of 5 or more by a traveling solvent floating zone method comprises a step of forming a melting zone including a solvent having a composition different from that of a raw material rod between the raw material rod and a seed crystal to grow the single crystal on the seed crystal. When setting the content of metal atoms A in the raw material rod to total 100 at% of Co atoms and the metal atoms A in the raw material rod to FRA at%, FRA is less than 2.0 at%; and when setting the content of metal atoms A in the solvent to total 100 at% of Co atoms and the metal atoms A in the solvent to SRA at%, SRA is less than 2.0 at%.SELECTED DRAWING: Figure 1

The invention discloses a method for preparing high-purity beryllium based on vacuum induction zone melting, and relates to the technical field of high-purity beryllium, the method comprises the following steps: (1) polishing a beryllium rod, and then placing the beryllium rod in a graphite boat in a protective gas environment; and (2) the beryllium rod treated in the step (1) is placed in a vacuum environment, a melting zone with the controllable axial temperature gradient is formed in the local portion of the beryllium rod through a coaxial induction coil, the melting zone is moved at the preset speed and repeated for multiple times, directional enrichment and removal are achieved through the impurity segregation effect, and high-purity beryllium is obtained. According to the method, the beryllium rod is subjected to zone melting treatment for multiple times in the vacuum environment, purification of the beryllium rod is achieved, and the purity of the beryllium rod can reach 99.995% or above.

The present application relates to the technical field of preparation of large-size bulk single-crystal metal materials, and provides a preparation method of single-crystal niobium with a centimeter level. The present application proposes a method for preparing single-crystal niobium with a centimeter level based on low strain + two-stage annealing. The method drives abnormal growth of dominant grains (the size can reach a centimeter level) by cold rolling deformation of niobium ingot and two-stage annealing, and finally obtains single-crystal niobium with a centimeter level through processing and cutting. The method provided by the present application breaks through the bottleneck that it is difficult to obtain centimeter-level grains by conventional recrystallization annealing process, and realizes stable preparation of single-crystal niobium with a centimeter level. In addition, compared with the electron beam floating zone melting method commonly used in the industry for preparing single-crystal niobium, the present application significantly reduces the equipment investment and production cost, has higher process flexibility and preparation efficiency, and has a wide application prospect.

The invention discloses a single-crystal magnesium alloy wire for acupoint catgut embedding and weight losing and a preparation method of the single-crystal magnesium alloy wire, the chemical composition expression of the single-crystal magnesium alloy wire is Mg-yM-zR, in the formula, y and z represent the mass fraction of M and the mass fraction of R in magnesium alloy respectively, y is larger than or equal to 1.2 and smaller than or equal to 1.7, z is larger than or equal to 0.3 and smaller than or equal to 0.8, and the balance is Mg; m is one of Sr, Ce and Co, and R is one of Ge, Sm and Dy; the wire is prepared through the processes of smelting and casting, homogenizing treatment, hot extrusion, multi-pass cold drawing, intermediate annealing and zone smelting and directional solidification, and has uniform and controllable degradation rate, excellent mechanical property and biocompatibility; after the catgut embedding slimming agent is embedded into the acupuncture point of a human body, fat metabolism is promoted through mild and lasting physical stimulation and chemical ion regulation, intergranular corrosion and premature fracture caused by a polycrystalline structure are avoided, and the safety and durability of a catgut embedding slimming therapy are improved.

The utility model provides a single crystal clamping device for zone melting, which comprises a clamping molybdenum sheet, the clamping molybdenum sheet comprises a clamping part, two sides of the clamping part are provided with blocking parts, the clamping part is matched with a single crystal, the blocking parts are arranged along the circumferential direction of the single crystal, and when the clamping part clamps the single crystal, gaps are arranged between the blocking parts and the single crystal. The utility model has the beneficial effects that the single crystal can be stably clamped in the zone melting crystal pulling process, the stability in the crystal making process is improved, the single crystal can be effectively prevented from entering the inner part of the outer shaft after being melted, and the inner part of the outer shaft or the inner shaft is prevented from being scalded.

This invention discloses a method for preparing ultrapure metallic vanadium by zone melting, belonging to the field of ultrapure metal preparation technology. The method includes: raw material pretreatment, where 99.9% pure metallic vanadium rods are polished, cleaned, dehydrated, dried, and then vacuum-sealed; and apparatus debugging and atmosphere control, where a vacuum of 3 × 10⁻⁶ is applied. ‑4 -5×10 ‑4 The process involves introducing 99.9999% high-purity argon gas and heating to 1920-1930℃, followed by holding at that temperature. Zone melting is then performed at a speed of 0.8-1 mm / h, with 8-15 alternating forward and reverse melting cycles and a temperature control accuracy of ±2℃. After cooling, the impurity zones at both ends are cut to remove impurities, yielding ultra-pure vanadium with a purity ≥99.999%. This invention, through precise control of the melting zone temperature, moving speed, melting cycles, and atmosphere, increases the purity of metallic vanadium from 99.9% to 99.999%-99.9996%, significantly reducing impurity content. The removal rate of major impurities exceeds 95%, meeting the stringent requirements for high-purity vanadium in the nuclear industry, semiconductors, and other fields.

The utility model relates to a germanium ingot preparation system, which comprises a first push boat furnace, a second push boat furnace and a third push boat furnace, the second pusher furnace is used for melting and ingot casting the metal germanium to form a cast germanium ingot; and the zone melting furnace is used for performing zone melting on the cast germanium ingot to obtain a germanium ingot. The germanium ingot preparation system is compact in structure, continuous production and preparation of germanium ingots can be achieved, production efficiency can be improved, and cost can be reduced.

The invention belongs to the field of quantum calculation research, relates to a germane-73 ingot preparation technology, and provides a method for preparing a high-purity germane-73 isotope by using amorphous germanium dioxide 73, and the method comprises the following steps: calcining germanium dioxide 73 at 450-600 DEG C to obtain amorphous germanium dioxide 73; according to the method, amorphous germanium dioxide 73 is reduced in a hydrogen atmosphere by adopting a multi-section heating and dynamic hydrogen flow adjusting strategy to obtain a germane-73 isotope crude product, and the germane-73 isotope crude product is subjected to zone melting to obtain the high-purity germane-73 isotope. According to the method, the reduction yield can be effectively improved by designing the calcining temperature, the multi-section heating and the dynamic hydrogen flow adjusting strategy, the product can be subjected to zone melting to obtain the germane-73 with the purity larger than or equal to 99.99995%, and the use requirement of a chip base material coating can be met.

The application belongs to the technical field of floating zone melting single crystal furnace, in particular to a continuous feeding zone melting furnace, which comprises a crystal growing furnace chamber, a silicon tube is arranged at the upper end of the interior of the crystal growing furnace chamber, a bottom quartz support is fixedly connected to the lower end of the silicon tube, a first cylinder is fixedly connected to the interior of the crystal growing furnace chamber, an induction coil is fixedly connected to the middle part of the first cylinder, the induction coil is located outside the silicon tube, a graphite preheating ring is arranged at the middle part of the upper end of the silicon tube, a plurality of water-cooled quartz tubes are arranged around the outside of the silicon tube, a seed crystal is slidingly arranged at the lower end of the interior of the crystal growing furnace chamber, a feeding assembly is arranged at the upper end of the crystal growing furnace chamber, the feeding assembly comprises a feeding bin arranged at the upper end of the crystal growing furnace chamber, the silicon tube is cooled by the water-cooled quartz tubes, a self-adapting silicon crucible is formed between the melted granular silicon and the un-melted granular silicon, and the problem that the granular silicon may be contaminated by contacting the bottom quartz support is solved.

The invention provides a method for preparing high-purity indium through vacuum distillation coupled zone melting, and belongs to the technical field of high-purity indium preparation. The invention provides a three-step synergistic preparation method of high-purity indium, which comprises the following steps: firstly, carrying out primary purification on raw materials based on the physical difference of saturated vapor pressure of each component by adopting a vacuum distillation technology, removing most conventional impurities and providing a clean matrix; then, aiming at the stubborn impurity thallium which cannot be removed by vacuum distillation, selectively oxidizing and extracting the stubborn impurity thallium in a molten salt-metal system by utilizing the electrochemical potential difference between the stubborn impurity thallium and indium, and replacing the thallium with bismuth which is easy to subsequently treat through impurity replacement; and finally, performing final fine purification by adopting zone melting, and enriching all residual trace impurities including bismuth to the ingot tail and cutting off through multiple times of directional solidification on the basis of a solute segregation principle, so as to obtain high-purity indium.

This invention discloses a method for recovering germanium from high-purity germanium Hall effect wafers, belonging to the field of semiconductor waste recycling technology. The method includes: S1 Blade scraping: scraping off the indium from the four electrodes of the Hall effect wafer with a blade; S2 Ultrasonic treatment: ultrasonic cleaning with organic solvent to remove oil, followed by nitrogen drying; S3 Heating to melt indium: heating to 157-200℃ to melt indium; S4 Cleanroom wiping: wiping away the surface indium melt with a cleanroom cloth soaked in isopropanol; S5 Nitric acid etching: etching with 10-15% dilute nitric acid for 1-3 minutes, with magnetic stirring throughout; S6 Hydrochloric acid etching: etching with 10-15% dilute hydrochloric acid for 2-5 minutes, with magnetic stirring throughout; S7 Zone melting. This invention combines physical scraping, heating and melting wiping, and two-step dilute acid selective etching with magnetic stirring, enabling efficient removal of surface indium electrodes without damaging the original morphology of the germanium wafer, greatly improving the germanium recovery rate.

The invention belongs to the technical field of halide semiconductor nuclear detection, and particularly relates to a bipolar charge transfer halide semiconductor single crystal for high-energy radiation detection and a preparation method and application thereof. The general formula of the crystal is Cs1-xAxPb1-yByBr3-zXz, A is one or more of Na, K, Rb, Cu, Tl and H3O, B is one or more of Si, Ge, Sn, Mg, Ca, Sr, Ba, Zn, Cd and Hg, X is one or more of F, Cl, I, BF4, HCOO, OH, CN, SCN, NCS, SH, NO3 and H2POO, 0 < = x < = 1, 0 < = y < = 1, and 0 < = z < = 3. Zone-melting purification is combined with the vertical Bridgman method, the crack-free large-size high-quality single crystal is prepared, the crystal yield and the device uniformity are improved, bipolar charge transfer is achieved, the device structure is simplified, and the method can be widely applied to the field of nuclear detection.

The invention provides a device and a method for preparing high-purity selenium dioxide, which can effectively remove impurities which have large difference in saturation solubility with selenium dioxide solid phase in liquid phases such as water, ethanol and the like, and realize preparation of high-purity selenium dioxide. According to the invention, a dissolution crystallization method and a similar zone melting mechanism for melting crystallization are unified and expanded to most dissolvable compounds. The device and the method provided by the invention have the advantages of high purity upper limit, low energy consumption, strong applicability and the like.

The present invention relates to the technical field of polysilicon production, and in particular to a process for producing a combined masterbatch of polysilicon raw materials for zone melting, comprising the following steps: installing a masterbatch silicon core on an inner ring electrode, installing a zone melting silicon core on a middle ring electrode and an outer ring electrode; connecting the masterbatch silicon core and the zone melting silicon core with phase current, and passing a mixture of hydrogen and trichlorosilane; when the silicon core masterbatch grows to a preset diameter, the inner ring electrode is powered on and disconnected; the zone melting silicon core continues to be powered on, and the zone melting polysilicon raw materials grow to a preset diameter, and the middle ring electrode and the outer ring electrode are powered off; disassembling the reduction furnace, and disassembling the silicon core masterbatch and the zone melting polysilicon raw materials. In the present invention, the silicon core masterbatch and the zone melting polysilicon raw materials are jointly produced, saving production costs; disconnecting the inner ring current makes the feed gas circulation more powerful and the raw material growth gas field more uniform; after the silicon core masterbatch stops growing, the reaction atmosphere temperature is reduced to avoid atomization, and the raw material growth temperature field is more uniform, thereby improving the quality of the zone melting polysilicon raw materials.

The invention relates to a zone-melting germanium ingot cutting platform. The device comprises an operation platform, an adjusting plate, clamping mechanisms and a cutting mechanism, the adjusting plate is adjustably installed on the operation platform, the multiple clamping mechanisms are installed on the adjusting plate at equal intervals, a germanium ingot is fixed in a flexible clamping mode, vibration generated when the germanium ingot breaks is reduced, and therefore the situation of edge breakage of the germanium ingot is relieved; the cutting mechanism is installed on the operation platform in a liftable mode and comprises a support, a cutting wire and a tensioning assembly, the cutting wire is rotatably installed on the support through a driving wheel and a driven wheel, the tensioning assembly corresponding to the cutting wire is further installed on the support, and the cutting wire can be tightened all the time through the tensioning assembly. The vibration problem caused by looseness of the cutting wire is relieved, and the cutting precision is improved.

This invention discloses an apparatus and method for purifying aluminum through zone melting, specifically relating to the field of aluminum purification. It includes: a moving assembly connected to a quartz tube, within which a graphite boat is placed. The graphite boat has different depths at its two ends, forming a pre-angled inclined surface inside. One end of the quartz tube has an exhaust opening; an induction coil sleeved on the outside of the quartz tube with a gap between them, and connected to a heating power source; the moving assembly capable of driving the quartz tube to move horizontally within the induction coil; an argon gas storage mechanism connected to the other end of the quartz tube via a pipeline; and an infrared thermometer located above the quartz tube, facing the central heating area of ​​the induction coil, used to monitor the temperature distribution on the sample surface within the graphite boat. Based on this apparatus, the compositional uniformity of aluminum can be improved.

The invention discloses a preparation method of a raw material bar for a W-Nb alloy single crystal. The method comprises the following steps: 1, mixing W powder and FNb-1 powder, pressing, and carrying out vacuum high-temperature sintering to obtain a W-Nb alloy sintered bar; secondly, a W-Nb alloy cast ingot is obtained after electron beam smelting; thirdly, a W-Nb alloy extrusion bar is obtained through extrusion machining; fourthly, a W-Nb alloy electrode bar is manufactured after heating and forging; and 5, carrying out pre-purification and grain amplification by adopting an electron beam zone melting furnace to prepare the raw material bar for the W-Nb alloy single crystal. The method combining electron beam melting, extrusion and forging hot working and electron beam zone melting is provided for the first time, alloying of a material system and removal of impurity elements in the material are achieved, material grain breaking and uniform distribution of structures are promoted, deep purification is conducted again, grain inoculation and growth are promoted, subsequent growth is facilitated, and a single crystal structure is formed. The preparation process is simple, easy to implement and suitable for the fields of spaceflight, nuclear energy and the like.