57 results about "Zone melting" patented technology

The invention discloses a grinding and polishing processing method of an ultra-precise YIG (yttrium iron garnet) single crystal, which is suitable for a planar YIG (yttrium iron garnet) single crystal (circle) prepared by a liquid phase epitaxy method, a molten salt method and a floating zone melting method, and comprises the following steps: grinding the YIG single crystal, and controlling the thickness and the total thickness deviation (TTV) of the crystal; rough polishing is carried out on the YIG single crystal, and subsurface damage of the wafer is eliminated; and finally, carrying out ultra-precision polishing on the YIG crystal to realize surface planarization with sub-nano-scale surface roughness. According to the method, the surface roughness of the yttrium iron garnet single crystal can be controlled below 1nm.

The invention belongs to the field of high-purity indium preparation, and provides a method for preparing high-purity indium based on ultrasonic vacuum distillation-electromagnetic pulse zone melting purification, the method combines vacuum distillation and zone melting purification technologies, ultrasonic waves are applied in the vacuum distillation process to assist in removing low-boiling-point impurities such as Cd, Zn and the like, and the purity of the high-purity indium is improved. In the zone melting process, pulse current is applied through an induction coil to assist in removing impurities mainly including Sn, Pb and Fe, and stable preparation of a high-purity indium product with the purity larger than or equal to 99.9995% and the oxygen content smaller than or equal to 2 ppm is achieved by screening and controlling technological conditions. According to the method, the requirement for the purity of the raw material indium is low, and the preparation cost of a high-purity indium product can be reduced.

The invention discloses a 7N single crystal copper preparation process based on zone melting and crystal orientation control, which specifically comprises the following steps: S1, raw material pretreatment: purifying 4N copper to 5N grade by adopting electrolytic refining of a nitric acid system, and the carbon content after acid pickling is less than or equal to 1ppm; the invention relates to the technical field of metal material preparation. According to the 7N single crystal copper preparation process based on zone melting and crystal orientation control, impurities in a material are redistributed in a melting zone through local heating, so that separation and removal of the impurities are achieved, in single crystal copper preparation, zone melting can remarkably reduce the content of the impurities in copper, the purity of the copper is improved, and the yield of the 7N single crystal copper is improved. By accurately controlling parameters such as the temperature gradient and the cooling rate in the smelting and solidification process, optimization of crystal orientation is achieved, single crystal copper with an ideal crystal structure can be obtained, the performance of the single crystal copper is improved, and impurities can be removed and crystal defects can be reduced through zone smelting; and crystal orientation control can optimize the crystal structure and improve the performance.

The invention discloses a zone-melting high-frequency coil with a water passing structure. A zone-melting method high-frequency coil with a water passing structure comprises a high-frequency coil, a first installation part and a second installation part which are arranged side by side are arranged on the high-frequency coil, the first installation part is detachably and electrically connected with the end of a copper electrode, and a water inlet in butt joint with an annular cooling channel is formed in the second installation part; the water inlet copper rod comprises a copper pipe part used for penetrating through the copper electrode and an exposed butt joint part used for exposing the copper electrode, and the exposed butt joint part is detachably connected with the second mounting part; the copper pipe part is sleeved with a first insulating ring, the first insulating ring abuts against the exposed butt joint part, and the first insulating ring is clamped between the water inlet copper rod and the copper electrode; the end, away from the exposed butt joint part, of the copper pipe part extends out of a copper electrode, and the end, away from the exposed butt joint part, of the copper pipe part is sleeved with a second insulating ring. A water inlet cooling system and a conductive function are realized, the service life of the high-frequency coil is prolonged, and the effect is improved.

The high-purity graphite boat cleaning method comprises the following steps: S1, putting a used high-purity graphite boat into a zone melting furnace; s2, oxygen is introduced, heating is conducted to 600-940 DEG C, and the temperature is kept for 30-60 min; s3, after keeping is finished, heating of the zone melting furnace is stopped, the high-purity graphite boat is taken out after being naturally cooled to the room temperature, the high-purity graphite boat is put into a cleaning solution to be subjected to ultrasonic cleaning for 30-60 min, and the cleaning solution is prepared from hydrofluoric acid, nitric acid and pure water according to the volume ratio of 1: (8-10): (500-600); s4, taking out the high-purity graphite boat, and ultrasonically washing the high-purity graphite boat with pure water for 30-60 minutes; s5, blow-drying the high-purity graphite boat with nitrogen, then putting the high-purity graphite boat into a zone melting furnace, vacuumizing to 1 * 10 <-2 >-1 * 10 <-3 > Pa, exhausting while pumping, keeping the pressure to 1 * 10 <-2 >-1 * 10 <-3 > Pa, heating to 400-650 DEG C, and keeping for 1-2 hours; and S6, after keeping is finished, the zone melting furnace stops heating, and after the high-purity graphite boat is naturally cooled to the room temperature, the high-purity graphite boat can be taken out for use.

The invention relates to the technical field of silicon slag recovery and purification, and particularly discloses a silicon slag refining and purifying process which comprises the following steps: mixing silicon slag with oxide activated functional pellets, and performing synchronous activation and reduction heat treatment in a weak reducing atmosphere at 1350-1450 DEG C to realize efficient separation of a slag phase and a silicon-rich phase; and deeply removing impurities through vacuum induction melting and electron beam zone melting to obtain the high-purity silicon ingot with the purity higher than 99.999%. The oxide activation functional pellet is of a core-shell structure with a reducing carbon core and an oxide shell, controllable and efficient in-situ oxidation and slagging reaction can be achieved, impurities such as Al, Fe, P and S in silicon slag are oxidized in situ through active oxygen provided by the pellet and captured into a low-melting-point slag phase, systematic and targeted purification of the silicon slag with complex components is achieved, and the purpose of purifying the silicon slag with the complex components is achieved. The method has the advantages of wide raw material adaptability, high purification efficiency, good process flow integration degree and the like, and successfully converts the silicon slag solid waste into a high-value material.

This invention belongs to the field of thermoelectric semiconductor materials technology, and relates to a bismuth telluride-based thermoelectric material, its preparation method, and its application. This invention obtains Bii through processes such as melt tumbling, zone melting, crushing and pressing, and hot extrusion molding. 0.48 Sb 1.52 Te3+3 wt%Te+ x wt% Cu₂Se, 0≤x≤0.1, has a room temperature carrier concentration of (3.1~5.5)×10⁻⁶. 19 cm ‑3 Electrical conductivity at room temperature is 770~1553 S / cm; thermal conductivity is 0.96~0.97 W / m². ‑1 K ‑1 μ W / k l The value is 0.15 m 3 KV ‑1 s ‑1 W ‑1 Thermoelectric figure of merit zT Not less than 1.0 (300~400 K). Specifically, it is produced by combining hot extrusion with Cu2Se doping. The hot extrusion process is used to optimize the grain orientation, form a dense microstructure, and reduce the thermal resistance of grain boundaries. It is suitable for industrial waste heat recovery and micro-refrigeration devices.

According to the thermodynamic calculation-based multi-element alloy suspension zone melting component distribution prediction method disclosed by the invention, based on thermodynamic phase diagram calculation and unbalanced solidification numerical model construction, a distribution rule of each alloy element in a solid phase and a liquid phase is determined according to real-time melting zone components; on the basis, quantitative prediction of component distribution of the multi-component alloy bar after smelting in the suspension zone is achieved through movement of the melting zone, and the problem that due to the fact that an existing model uses an approximately-simplified constant distribution coefficient, prediction deviation of solidification components of a multi-component alloy system is large is solved. The calculation method is simple and convenient, the test process of long time consumption and high cost of multi-time suspension zone smelting is avoided, the test workload is reduced, the process optimization process is accelerated, and the cost of repeated tests is reduced.

The present application relates to the technical field of preparation of large-size bulk single-crystal metal materials, and provides a preparation method of single-crystal niobium with a centimeter level. The present application proposes a method for preparing single-crystal niobium with a centimeter level based on low strain + two-stage annealing. The method drives abnormal growth of dominant grains (the size can reach a centimeter level) by cold rolling deformation of niobium ingot and two-stage annealing, and finally obtains single-crystal niobium with a centimeter level through processing and cutting. The method provided by the present application breaks through the bottleneck that it is difficult to obtain centimeter-level grains by conventional recrystallization annealing process, and realizes stable preparation of single-crystal niobium with a centimeter level. In addition, compared with the electron beam floating zone melting method commonly used in the industry for preparing single-crystal niobium, the present application significantly reduces the equipment investment and production cost, has higher process flexibility and preparation efficiency, and has a wide application prospect.

The invention discloses a single-crystal magnesium alloy wire for acupoint catgut embedding and weight losing and a preparation method of the single-crystal magnesium alloy wire, the chemical composition expression of the single-crystal magnesium alloy wire is Mg-yM-zR, in the formula, y and z represent the mass fraction of M and the mass fraction of R in magnesium alloy respectively, y is larger than or equal to 1.2 and smaller than or equal to 1.7, z is larger than or equal to 0.3 and smaller than or equal to 0.8, and the balance is Mg; m is one of Sr, Ce and Co, and R is one of Ge, Sm and Dy; the wire is prepared through the processes of smelting and casting, homogenizing treatment, hot extrusion, multi-pass cold drawing, intermediate annealing and zone smelting and directional solidification, and has uniform and controllable degradation rate, excellent mechanical property and biocompatibility; after the catgut embedding slimming agent is embedded into the acupuncture point of a human body, fat metabolism is promoted through mild and lasting physical stimulation and chemical ion regulation, intergranular corrosion and premature fracture caused by a polycrystalline structure are avoided, and the safety and durability of a catgut embedding slimming therapy are improved.

The utility model provides a single crystal clamping device for zone melting, which comprises a clamping molybdenum sheet, the clamping molybdenum sheet comprises a clamping part, two sides of the clamping part are provided with blocking parts, the clamping part is matched with a single crystal, the blocking parts are arranged along the circumferential direction of the single crystal, and when the clamping part clamps the single crystal, gaps are arranged between the blocking parts and the single crystal. The utility model has the beneficial effects that the single crystal can be stably clamped in the zone melting crystal pulling process, the stability in the crystal making process is improved, the single crystal can be effectively prevented from entering the inner part of the outer shaft after being melted, and the inner part of the outer shaft or the inner shaft is prevented from being scalded.

This invention discloses a method for preparing ultrapure metallic vanadium by zone melting, belonging to the field of ultrapure metal preparation technology. The method includes: raw material pretreatment, where 99.9% pure metallic vanadium rods are polished, cleaned, dehydrated, dried, and then vacuum-sealed; and apparatus debugging and atmosphere control, where a vacuum of 3 × 10⁻⁶ is applied. ‑4 -5×10 ‑4 The process involves introducing 99.9999% high-purity argon gas and heating to 1920-1930℃, followed by holding at that temperature. Zone melting is then performed at a speed of 0.8-1 mm / h, with 8-15 alternating forward and reverse melting cycles and a temperature control accuracy of ±2℃. After cooling, the impurity zones at both ends are cut to remove impurities, yielding ultra-pure vanadium with a purity ≥99.999%. This invention, through precise control of the melting zone temperature, moving speed, melting cycles, and atmosphere, increases the purity of metallic vanadium from 99.9% to 99.999%-99.9996%, significantly reducing impurity content. The removal rate of major impurities exceeds 95%, meeting the stringent requirements for high-purity vanadium in the nuclear industry, semiconductors, and other fields.

The invention belongs to the field of quantum calculation research, relates to a germane-73 ingot preparation technology, and provides a method for preparing a high-purity germane-73 isotope by using amorphous germanium dioxide 73, and the method comprises the following steps: calcining germanium dioxide 73 at 450-600 DEG C to obtain amorphous germanium dioxide 73; according to the method, amorphous germanium dioxide 73 is reduced in a hydrogen atmosphere by adopting a multi-section heating and dynamic hydrogen flow adjusting strategy to obtain a germane-73 isotope crude product, and the germane-73 isotope crude product is subjected to zone melting to obtain the high-purity germane-73 isotope. According to the method, the reduction yield can be effectively improved by designing the calcining temperature, the multi-section heating and the dynamic hydrogen flow adjusting strategy, the product can be subjected to zone melting to obtain the germane-73 with the purity larger than or equal to 99.99995%, and the use requirement of a chip base material coating can be met.

The application belongs to the technical field of floating zone melting single crystal furnace, in particular to a continuous feeding zone melting furnace, which comprises a crystal growing furnace chamber, a silicon tube is arranged at the upper end of the interior of the crystal growing furnace chamber, a bottom quartz support is fixedly connected to the lower end of the silicon tube, a first cylinder is fixedly connected to the interior of the crystal growing furnace chamber, an induction coil is fixedly connected to the middle part of the first cylinder, the induction coil is located outside the silicon tube, a graphite preheating ring is arranged at the middle part of the upper end of the silicon tube, a plurality of water-cooled quartz tubes are arranged around the outside of the silicon tube, a seed crystal is slidingly arranged at the lower end of the interior of the crystal growing furnace chamber, a feeding assembly is arranged at the upper end of the crystal growing furnace chamber, the feeding assembly comprises a feeding bin arranged at the upper end of the crystal growing furnace chamber, the silicon tube is cooled by the water-cooled quartz tubes, a self-adapting silicon crucible is formed between the melted granular silicon and the un-melted granular silicon, and the problem that the granular silicon may be contaminated by contacting the bottom quartz support is solved.

The invention provides a method for preparing high-purity indium through vacuum distillation coupled zone melting, and belongs to the technical field of high-purity indium preparation. The invention provides a three-step synergistic preparation method of high-purity indium, which comprises the following steps: firstly, carrying out primary purification on raw materials based on the physical difference of saturated vapor pressure of each component by adopting a vacuum distillation technology, removing most conventional impurities and providing a clean matrix; then, aiming at the stubborn impurity thallium which cannot be removed by vacuum distillation, selectively oxidizing and extracting the stubborn impurity thallium in a molten salt-metal system by utilizing the electrochemical potential difference between the stubborn impurity thallium and indium, and replacing the thallium with bismuth which is easy to subsequently treat through impurity replacement; and finally, performing final fine purification by adopting zone melting, and enriching all residual trace impurities including bismuth to the ingot tail and cutting off through multiple times of directional solidification on the basis of a solute segregation principle, so as to obtain high-purity indium.

This invention discloses a method for recovering germanium from high-purity germanium Hall effect wafers, belonging to the field of semiconductor waste recycling technology. The method includes: S1 Blade scraping: scraping off the indium from the four electrodes of the Hall effect wafer with a blade; S2 Ultrasonic treatment: ultrasonic cleaning with organic solvent to remove oil, followed by nitrogen drying; S3 Heating to melt indium: heating to 157-200℃ to melt indium; S4 Cleanroom wiping: wiping away the surface indium melt with a cleanroom cloth soaked in isopropanol; S5 Nitric acid etching: etching with 10-15% dilute nitric acid for 1-3 minutes, with magnetic stirring throughout; S6 Hydrochloric acid etching: etching with 10-15% dilute hydrochloric acid for 2-5 minutes, with magnetic stirring throughout; S7 Zone melting. This invention combines physical scraping, heating and melting wiping, and two-step dilute acid selective etching with magnetic stirring, enabling efficient removal of surface indium electrodes without damaging the original morphology of the germanium wafer, greatly improving the germanium recovery rate.

The invention provides a device and a method for preparing high-purity selenium dioxide, which can effectively remove impurities which have large difference in saturation solubility with selenium dioxide solid phase in liquid phases such as water, ethanol and the like, and realize preparation of high-purity selenium dioxide. According to the invention, a dissolution crystallization method and a similar zone melting mechanism for melting crystallization are unified and expanded to most dissolvable compounds. The device and the method provided by the invention have the advantages of high purity upper limit, low energy consumption, strong applicability and the like.

The invention relates to a zone-melting germanium ingot cutting platform. The device comprises an operation platform, an adjusting plate, clamping mechanisms and a cutting mechanism, the adjusting plate is adjustably installed on the operation platform, the multiple clamping mechanisms are installed on the adjusting plate at equal intervals, a germanium ingot is fixed in a flexible clamping mode, vibration generated when the germanium ingot breaks is reduced, and therefore the situation of edge breakage of the germanium ingot is relieved; the cutting mechanism is installed on the operation platform in a liftable mode and comprises a support, a cutting wire and a tensioning assembly, the cutting wire is rotatably installed on the support through a driving wheel and a driven wheel, the tensioning assembly corresponding to the cutting wire is further installed on the support, and the cutting wire can be tightened all the time through the tensioning assembly. The vibration problem caused by looseness of the cutting wire is relieved, and the cutting precision is improved.

This invention discloses an apparatus and method for purifying aluminum through zone melting, specifically relating to the field of aluminum purification. It includes: a moving assembly connected to a quartz tube, within which a graphite boat is placed. The graphite boat has different depths at its two ends, forming a pre-angled inclined surface inside. One end of the quartz tube has an exhaust opening; an induction coil sleeved on the outside of the quartz tube with a gap between them, and connected to a heating power source; the moving assembly capable of driving the quartz tube to move horizontally within the induction coil; an argon gas storage mechanism connected to the other end of the quartz tube via a pipeline; and an infrared thermometer located above the quartz tube, facing the central heating area of ​​the induction coil, used to monitor the temperature distribution on the sample surface within the graphite boat. Based on this apparatus, the compositional uniformity of aluminum can be improved.

The invention discloses a high-purity germanium isotope germanium ingot and a preparation method thereof, the high-purity germanium isotope germanium ingot is prepared by taking a low-resistivity (0.2-1 omega.cm) germanium isotope germanium ingot as a raw material and adopting multiple times of zone melting purification, the purity of the obtained high-purity germanium isotope germanium ingot product reaches 6.5 N and above, the loss is less, and the loss ratio is below 2%.

The invention relates to the technical field of metal purification, and discloses a 6N-grade ultra-high-purity aluminum purification method based on suspension zone melting and directional solidification, which comprises the following steps: forming a solid aluminum shell in-situ crucible by using a vertical cold crucible, and carrying out directional solidification to enrich impurities by adopting a first process mode; a second process mode is adopted, and two-stage serial extraction is executed in the impurity enrichment area, specifically, firstly, rapid reciprocating movement is conducted to break a membrane to remove volatile impurities, and then slow one-way movement segregation is conducted to remove non-volatile impurities. And the process conflict of volatile and non-volatile impurity removal mechanisms is solved.

This invention relates to the field of single-crystal silicon preparation technology, specifically disclosing a method for preparing Czochralski silicon single crystals. The method provided by this invention solves the problem of high oxygen content caused by crucible oxygen release through the physical barrier of the solidified layer formed by zone solidification. It also achieves the preparation of large-size single-crystal silicon with extremely low oxygen content by using the zero-magnetic-force surface of the CUSP magnetic field to facilitate oxygen volatilization and suppressing oxygen atom migration to the growth interface through a strong edge magnetic field. This solves the problem of the difficulty in stably mass-producing large-size, low-oxygen-content single-crystal silicon using the zone melting method in existing technologies. Furthermore, the Czochralski silicon single crystal preparation method provided by this invention is simple and controllable to operate, requires no special or complex equipment, and is suitable for large-scale production.

The invention discloses a gas phase doping method for growth of a zone-melting silicon single crystal. The method comprises the following steps: (1) measuring and collecting historical doping data of single crystals with different resistivity specifications; (2) grouping the data according to the specification of the resistivity, correcting the section resistivity of the single crystal according to the diameter of the single crystal, and eliminating abnormal data; (3) fitting the relationship between the section resistivity of the single crystal and the equal-diameter doping gas flow, and calculating the target doping gas flow in the equal-diameter stage of the single crystal by using a fitted curve; (4) calculating the target doping gas flow in the shouldering stage by using the target doping gas flow in the equal-diameter stage and the historical doping data; and (5) during single crystal growth, performing the target doping gas flow at the shouldering stage in the shouldering stage, and performing the target doping gas flow at the equal-diameter stage corrected according to the actual diameter of the equal-diameter part of the single crystal in the equal-diameter stage. The gas-phase doped zone-melting silicon single crystal grown by the method is high in resistivity accuracy and good in axial resistivity distribution uniformity.

The utility model relates to the technical field of metal purification, in particular to a zone melting furnace quartz tube sealing and fixing device which comprises a furnace body base and a quartz tube, two fixing flanges are symmetrically arranged on the furnace body base, the same quartz tube is jointly inserted into inner rings of the two fixing flanges, and the two ends of the quartz tube extend towards the sides, away from each other, of the two fixing flanges respectively. Flange covers are arranged on the sides, away from each other, of the two fixing flanges respectively, pressing rings are arranged on the sides, close to the fixing flanges, of the two flange covers respectively, sealing rings are arranged on the quartz tube and located between the pressing rings and the close fixing flanges in a sleeving mode, the pressing rings are matched with the fixing flanges to extrude the sealing rings to seal the ends of the quartz tube, and the flange covers are connected with the fixing flanges through bolts. The quartz tube is convenient and rapid to disassemble and assemble, after the flange covers and the sealing rings on the two sides are disassembled, the quartz tube can be directly inserted into or pulled out of the fixed flange from one side, repeated adjustment is not needed, the disassembly and assembly speed is increased, and the working efficiency is improved.

The utility model discloses a zone-melting silicon single crystal preparation device for detecting minority carrier lifetime of polycrystalline silicon. The zone-melting silicon single crystal preparation device comprises a zone-melting furnace, and an upper shaft, a lower shaft, a sample core clamp, a coil and a seed crystal clamp which are arranged in the zone-melting furnace, wherein the upper end of the upper shaft and the lower end of the lower shaft are respectively fixed at the inner top and the inner bottom of the zone melting furnace, and the upper shaft and the lower shaft are respectively connected with a driving mechanism; a sample core clamp used for clamping and fixing a sample core is arranged at the lower end of the upper shaft, a seed crystal clamp used for clamping and fixing a seed crystal is arranged at the upper end of the lower shaft, and the sample core clamp and the seed crystal clamp are relatively and vertically arranged; the coil is arranged around the sample core and is connected with a heating mechanism. Therefore, the technical problem that dislocation cannot be eliminated thoroughly and extends to a single crystal can be avoided, and the minority carrier lifetime in a polycrystalline silicon product can be represented more accurately during detection.

The invention relates to a multi-doped lanthanum bromide scintillation crystal and a preparation method thereof. The light-emitting non-uniformity of the head part and the tail part of the crystal is not more than 0.1%, the scintillation performance of the head part and the tail part of the crystal is consistent, the crystal quality is greatly improved, the application range of the crystal is widened, and the market prospect is wide. According to the preparation method disclosed by the embodiment of the invention, the preparation method of the multi-doped lanthanum bromide scintillation crystal in a secondary crystal growth mode by taking the crystal which is synthesized by a horizontal zone melting method and is free of surface and tail impurity layers as a raw material is provided for the first time, the operation is simple, the raw materials are easy to obtain, and the implementation of the whole preparation process is easy to realize. The problems of poor luminescence uniformity and the like caused by a component segregation phenomenon are avoided, the luminescence nonuniformity of the head part and the tail part of the crystal is improved to 0.07% from 1.12%, the energy resolution of the crystal is improved to 2.33% at 662 KeV from 2.94% at 662 KeV, and the quality of the crystal is greatly improved.

This invention relates to the field of thermoelectric materials technology, and discloses a bismuth telluride-based thermoelectric material, its preparation method, and its applications. It includes a matrix and a dopant material; the matrix is ​​bismuth telluride; the dopant material is selected from binary compound materials. The thermoelectric material of this application improves electrical transport performance and increases the power factor by incorporating binary compound materials into the matrix material and combining zone melting, ultrasonic exfoliation, and hot-pressing sintering processes. It also introduces numerous dislocations, grain boundaries, and other defects to effectively reduce lattice thermal conductivity and optimize thermoelectric performance; simultaneously, it significantly improves the Vickers hardness of the bismuth telluride-based thermoelectric material.

The invention discloses a bismuth telluride-based thermoelectric material preparation method, which comprises the steps of S1, weighing high-purity Bi, Te and Sb elementary substance powder as raw materials according to a P-type bismuth telluride thermoelectric material chemical formula (Bi1-ySby) 2Te3; s2, pouring the uniformly mixed materials into a quartz crucible, placing the quartz crucible in a closed atmosphere furnace, introducing protective gas into the furnace, and inserting a fixed stirring paddle; raising the temperature of the atmosphere furnace constantly, lowering a stirring paddle for forced stirring after reaching a set temperature, raising the stirring paddle after constant-temperature intensified smelting for a period of time, and taking out a product after cooling the product to room temperature along with the furnace; and S3, uniformly refining the product obtained in the step S2 into powder, filling the powder into a mold, compacting and sintering to obtain the high-performance bismuth telluride-based thermoelectric material. The bismuth telluride-based thermoelectric material prepared through the method is more uniform in alloy component, smaller in grain size and more excellent in thermoelectric performance, and compared with a traditional zone melting method and a smelting-annealing method, the method is easy to operate, simple and convenient in process and suitable for large-scale commercial production.

The method for purifying germanium through zone melting comprises the following steps: S1, treating a germanium material; s2, charging; s3, moving the heating coil from the head to the tail; s4, zone melting I: S41, when the germanium material at the tail part is completely solidified, reversely moving, quickly moving to a point B, melting the material from the point B, and moving from the point B to the head part; s42, when the germanium material at the head part is completely solidified, forward movement is carried out, the germanium material is rapidly moved to the point A, the material is melted from the point A, and the germanium material is moved from the point A to the tail part; (S43) repeating the step (S41) and the step (S42); s5, zone melting II: S51, when the germanium material at the tail part is completely solidified, reversely moving, quickly moving to a point B1 farther from the tail part than the point B, melting the material from the point B1, and moving from the point B1 to the head part; s52, when the germanium material at the head part is completely solidified, the heating coil moves forwards, firstly rapidly moves to a point A1 farther from the head part than the point A, melts the material from the point A1, and moves from the point A1 to the tail part; s53, repeating the step S51 and the step S52; and S6, turning off the heating power supply, cooling, turning off nitrogen, and taking out.

The application discloses a kind of based on the zone melting of polycrystalline silicon quality detection method of multi-parameter coupling, comprising the following steps: S1, sample preparation, S2, sample surface treatment, S3, sample surface scanning, S4, scanning data processing, S5, raw material quality analysis.The advantages are: by argon ion polishing combined with EBSD electron backscattering diffractometer, break through the limitation of traditional surface etching, can three-dimensional analysis polycrystalline silicon internal grain size, distribution and grain boundary morphology, more accurately reflect the physical growth form and quality characteristics of polycrystalline silicon.Based on the raw material screening of grain uniformity standard, it provides scientific, reasonable and effective basis for effectively selecting qualified zone melting polycrystalline silicon raw material before drawing, can avoid dislocation problem caused by microcrystalline unmelted, thereby significantly improve the success rate of single crystal pulling, reduce raw material waste, reduce production cost;It can also provide a reference for the purchase and export price of polycrystalline silicon rod.