12 results about "Zone melting" patented technology

The present application relates to the technical field of preparation of large-size bulk single-crystal metal materials, and provides a preparation method of single-crystal niobium with a centimeter level. The present application proposes a method for preparing single-crystal niobium with a centimeter level based on low strain + two-stage annealing. The method drives abnormal growth of dominant grains (the size can reach a centimeter level) by cold rolling deformation of niobium ingot and two-stage annealing, and finally obtains single-crystal niobium with a centimeter level through processing and cutting. The method provided by the present application breaks through the bottleneck that it is difficult to obtain centimeter-level grains by conventional recrystallization annealing process, and realizes stable preparation of single-crystal niobium with a centimeter level. In addition, compared with the electron beam floating zone melting method commonly used in the industry for preparing single-crystal niobium, the present application significantly reduces the equipment investment and production cost, has higher process flexibility and preparation efficiency, and has a wide application prospect.

This invention discloses a method for preparing ultrapure metallic vanadium by zone melting, belonging to the field of ultrapure metal preparation technology. The method includes: raw material pretreatment, where 99.9% pure metallic vanadium rods are polished, cleaned, dehydrated, dried, and then vacuum-sealed; and apparatus debugging and atmosphere control, where a vacuum of 3 × 10⁻⁶ is applied. ‑4 -5×10 ‑4 The process involves introducing 99.9999% high-purity argon gas and heating to 1920-1930℃, followed by holding at that temperature. Zone melting is then performed at a speed of 0.8-1 mm / h, with 8-15 alternating forward and reverse melting cycles and a temperature control accuracy of ±2℃. After cooling, the impurity zones at both ends are cut to remove impurities, yielding ultra-pure vanadium with a purity ≥99.999%. This invention, through precise control of the melting zone temperature, moving speed, melting cycles, and atmosphere, increases the purity of metallic vanadium from 99.9% to 99.999%-99.9996%, significantly reducing impurity content. The removal rate of major impurities exceeds 95%, meeting the stringent requirements for high-purity vanadium in the nuclear industry, semiconductors, and other fields.

This invention discloses an apparatus and method for purifying aluminum through zone melting, specifically relating to the field of aluminum purification. It includes: a moving assembly connected to a quartz tube, within which a graphite boat is placed. The graphite boat has different depths at its two ends, forming a pre-angled inclined surface inside. One end of the quartz tube has an exhaust opening; an induction coil sleeved on the outside of the quartz tube with a gap between them, and connected to a heating power source; the moving assembly capable of driving the quartz tube to move horizontally within the induction coil; an argon gas storage mechanism connected to the other end of the quartz tube via a pipeline; and an infrared thermometer located above the quartz tube, facing the central heating area of ​​the induction coil, used to monitor the temperature distribution on the sample surface within the graphite boat. Based on this apparatus, the compositional uniformity of aluminum can be improved.

This invention relates to the field of single-crystal silicon preparation technology, specifically disclosing a method for preparing Czochralski silicon single crystals. The method provided by this invention solves the problem of high oxygen content caused by crucible oxygen release through the physical barrier of the solidified layer formed by zone solidification. It also achieves the preparation of large-size single-crystal silicon with extremely low oxygen content by using the zero-magnetic-force surface of the CUSP magnetic field to facilitate oxygen volatilization and suppressing oxygen atom migration to the growth interface through a strong edge magnetic field. This solves the problem of the difficulty in stably mass-producing large-size, low-oxygen-content single-crystal silicon using the zone melting method in existing technologies. Furthermore, the Czochralski silicon single crystal preparation method provided by this invention is simple and controllable to operate, requires no special or complex equipment, and is suitable for large-scale production.

This invention relates to the field of GaSb polycrystalline synthesis and purification technology, and discloses a method for synthesizing and purifying gallium antimonide (GaSb) polycrystalline. The method includes first placing Ga and Sb elements into a boron nitride boat, then placing the boron nitride boat into a quartz tube for high-temperature synthesis, followed by melting the quartz tube using a cutting mechanism, installing a sealing mechanism at both ends of the quartz tube using a driving mechanism, performing zone melting purification, and finally removing the GaSb polycrystalline and boron nitride boat. This invention utilizes a heating chamber and a semi-circular plate to form a complete tubular structure. A lifting assembly drives the semi-circular plate to send the quartz tube to a height coaxial with the driving mechanism, cutting mechanism, and sealing mechanism, followed by cutting and secondary sealing. This achieves a fully enclosed operation from GaSb polycrystalline synthesis, quartz tube melting, secondary sealing to zone melting purification, without interrupting the protective state to remove the polycrystalline, completely avoiding external contamination of the polycrystalline by oxygen, moisture, dust, etc., in the operating environment, and ensuring the crystal integrity and stoichiometry of the GaSb polycrystalline.

The application relates to the technical field of melting furnaces, and discloses a high-pressure floating-zone melting furnace for anisotropic UCM superconducting material and a control method thereof, which solves the problem that, after material growth is completed, slag is easily accumulated in a furnace cavity of an existing high-pressure floating-zone melting furnace, manual tool is needed to manually shovel and clean the slag, and the high-pressure floating-zone melting furnace comprises a bottom plate, a high-pressure floating-zone melting furnace body is fixedly installed at the top of the bottom plate, a supporting frame is fixedly installed at the rear side of the top of the high-pressure floating-zone melting furnace body, an outer lifting door and a translation door are movably installed at the front end and the rear end of the high-pressure floating-zone melting furnace body respectively, a connecting frame is fixedly installed at the top of the supporting frame, a servo motor is fixedly installed on one side of the connecting frame, and the high-pressure floating-zone melting furnace can quickly and conveniently push out the slag accumulated in the furnace and clean the slag attached to the inner wall, manual intervention is not needed, the labor amount of the operator is reduced, the work efficiency is improved, and the effective cleaning effect is achieved.

This invention discloses a NiTi shape memory alloy with strong crystallographic texture and its preparation method, belonging to the field of NiTi shape memory alloys. The method includes: mounting nearly atomically equal NiTi polycrystalline rods in an electron beam levitation zone melting furnace, evacuating to a target vacuum level; increasing the filament current to a set current, and increasing the electron gun power until a molten zone appears and stabilizes; performing zone melting from bottom to top with the electron gun at a set zone melting rate; and cooling to room temperature after melting to obtain a polycrystalline NiTi shape memory alloy with a [001] orientation texture. This invention employs electron beam levitation zone melting technology, which is simple to operate, has high material utilization, and produces a NiTi alloy with high purity, strong texture, and excellent superelastic recovery performance.

This invention relates to the field of zone melting furnaces, specifically a single crystal clamping device for a zone melting furnace. The device includes a base with a central through-hole. Multiple grooves are arranged in a circumferential array on the upper surface of the base, each groove extending radially to the central through-hole. Each groove contains a sliding plate, and an arc-shaped clamping plate is fixed to the end of each sliding plate near the center of the base. A guide rod is provided on the upper surface of each sliding plate. A turntable is located above the base, with a central through-hole. Multiple arc-shaped extrusion holes are arranged in a circumferential array on the turntable, and these extrusion holes are fitted around the outer ring of the guide rods. In this invention, the turntable simultaneously extrudes multiple guide rods, which in turn drive the clamping plate to clamp the crystal and provide support for the entire crystal. This reduces the swaying generated during crystal growth, thereby improving the stability of crystal growth and ensuring smooth crystal growth.

This invention discloses a method for preparing raw material rods for W-Nb alloy single crystals. The method includes: 1. mixing W powder and FNb-1 powder, pressing and sintering under vacuum at high temperature to obtain W-Nb alloy sintered bars; 2. obtaining W-Nb alloy ingots after electron beam melting; 3. obtaining W-Nb alloy extruded rods through extrusion processing; 4. producing W-Nb alloy electrode rods after hot forging; 5. obtaining raw material rods for W-Nb alloy single crystals through pre-purification and grain amplification using an electron beam zone melting furnace. This invention is the first to propose a method combining electron beam melting, extrusion and forging hot processing, and electron beam zone melting to achieve alloying of the material system and removal of internal impurity elements, promote grain breakage and uniform distribution of the microstructure, further purify and promote grain growth, which is beneficial for subsequent growth to form a single crystal structure. The preparation process is simple, easy to implement, and applicable to aerospace, nuclear energy and other fields.

The application relates to the technical field of photovoltaic monocrystalline silicon preparation, in particular to a silicon rod growing method. The silicon rod growing method provided by the application comprises the following steps: S1, using a zone melting method to prepare a monocrystalline silicon base rod; the monocrystalline silicon base rod is sequentially subjected to ion doping and annealing, a first doping area is formed at the head and tail of the monocrystalline silicon base rod, and a primary mother alloy rod is obtained; S2, the primary mother alloy rod is cut into a silicon core, the silicon core is uniformly mixed with high-purity intrinsic polycrystalline silicon fragments, and a secondary doping material is obtained; S3, high-purity intrinsic polycrystalline silicon blocks are laid in a main crucible, and then the secondary doping material is laid on the surface of the high-purity intrinsic polycrystalline silicon blocks; and then heating and crystal growth are sequentially performed. The method realizes high uniform distribution of the dopant in the molten silicon body, introduces less impurities, and can meet the requirements of the BC battery on high uniformity of the monocrystalline silicon resistivity, low oxygen content and high minority carrier lifetime.