The invention discloses a method for preparing vacuum zone melting high resistant silicon single crystal, comprising the two sequential major processes: polysilicon purification and crystal forming of silicon single crystal, wherein, the process of polysilicon purification comprises the steps of cleaning fire, charging, evacuating, preheating, melting materials heat sealing, growing narrow necks, shouldering, shoulder circuiting, equating diameter, ending and repeating; the process of crystal forming of silicon single crystal comprises the steps of cleaning fire, charging, evacuating, preheating, processing of chemicals, crystal seeding, shouldering, shoulder circuiting, equating diameter, ending and blowing out. With the method of the invention adopted to prepare silicon single crystal, electric resistivity, ultra-high purity, resistivity profile, uniformity of cross-section electric resistivity and minority carrier lifetime are greatly improved; purity of the silicon single crystal is above 11N, electric resistivity reaches 8000 omega/cm-30000omega/cm, uniformity of cross-section electric resistivity is less than 15%, and minority carrier lifetime is more than 600-1000Mus, thus greatly improving performance, stability and safety of the devices while realizing mass production of vacuum zone melting high resistant silicon single crystal.