Process for preparing vapor doping zone-melted silicon single crystal

A production method, gas-phase doping technology, which is applied in the production field of molten silicon single crystal in the gas-phase doping area, and can solve the problem of high axial resistivity inhomogeneity of silicon single crystal

Active Publication Date: 2006-11-22
ZHONGHUAN ADVANCED SEMICON MATERIALS CO LTD +1
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  • Abstract
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Problems solved by technology

At the same time, there is still the problem that the radial

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  • Process for preparing vapor doping zone-melted silicon single crystal
  • Process for preparing vapor doping zone-melted silicon single crystal
  • Process for preparing vapor doping zone-melted silicon single crystal

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Embodiment Construction

[0015] refer to figure 1 , 2, 3. In the described evacuation and inflation process, the relative pressure of the furnace pressure is 0.2bar-6bar; The speed is 1mm / min-5mm / min, and the rotation speed of the lower shaft maintained at equal diameter is 1rpm-30rpm. In the described doping process, the doping gas used is phosphine (PH 3 ), borane (B 2 h 6 ), phosphine (PH 3 ) and argon (Ar) mixed gas, borane (B 2 h 6 ) mixed with argon (Ar) any one of the four doping gases; among the four doping gases, phosphine (PH 3 ) or borane (B 2 h 6 ) accounts for a concentration ratio of 0.0001%-100%.

[0016] In the evacuation process, the use of furnace pressure is determined according to the diameter of the silicon single crystal. Example: 3" single crystal uses 0.5bar (relative pressure), while 4" single crystal uses 1bar (relative pressure).

[0017] The doping gas used in the doping process includes four kinds: 1. Phosphine (PH 3 ) its concentration is 100%, 2. borane (B 2...

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Abstract

The invention discloses a manufacturing method of gas-phase pre-blending zone melting process monocrystalline silicon, which comprises the following steps: shoving; exhausting; filling argon gas; doping; mitering; utilizing zone melting process monocrystalline silicon furnace electric control system to do the following operation in the metering growing procedure: setting positive, inversed movement for touching screen and coil heating moving order; moving positively for 1-90 s and moving inversely; repeating the movement to coincidence with the coil center and lower shaft or eccentric 1-50 mm. The invention reduces the radial and axial resistance heterogeneous problem of silicon single-crystal to improve the stability and reliability, which satisfies different needs of zone melting process monocrystalline silicon.

Description

technical field [0001] The invention relates to a production method of silicon single crystal, in particular to a production method of molten silicon single crystal in a gaseous phase doping region. technical background [0002] At present, the silicon single crystal produced by the Czochralski method or the zone melting method is easy to cause thermal instability and reversibility of the resistivity due to the high oxygen content, which leads to the limitation of the Czochralski silicon single crystal in the manufacturing process of power devices. Although the silicon single crystal produced by the zone melting method can reduce the oxygen content, it can only be doped by neutron irradiation, which has a long production cycle, high production cost, and neutron irradiation resources. shortage constraints. [0003] The present invention supplements and improves on the basis of the patent No. 02159135.0 and the same title as "Production Method of Fused Silicon Single Crystal ...

Claims

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Application Information

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IPC IPC(8): C30B13/12
Inventor 沈浩平刘为钢高树良王聚安昝兴立李翔
Owner ZHONGHUAN ADVANCED SEMICON MATERIALS CO LTD
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