42 results about "Sequential deposition" patented technology

The invention belongs to the technical field of ultrahigh-temperature ceramic materials, and discloses a high-purity porous tantalum carbide ceramic and a preparation method and application thereof.The preparation method comprises the steps that a porous graphite substrate is horizontally placed in a vertical vapor deposition chamber, after the chamber is vacuumized, argon is introduced, the reaction air pressure is increased to 10-100 mbar, and the graphite substrate is heated to the deposition temperature of the tantalum element; inorganic tantalum salt and hydrogen are conveyed into the cavity, and tantalum element deposition of the first area is achieved; argon is introduced into the reaction chamber, the reaction air pressure is pressurized, the carrier gas flow of the inorganic tantalum salt is increased, the deposition temperature of the tantalum element is increased, tantalum element deposition of the second area is achieved, and the process is repeated to achieve sequential deposition of the tantalum element on the porous graphite substrate from inside to outside; after the tantalum element is completely deposited, the high-purity porous graphite substrate is heated and reacts to obtain tantalum carbide, reaction conditions are adjusted, so that reaction airflow gradually permeates at different depths of the porous material, and Ta is uniformly deposited at different positions.

Methods of producing an optical surface atop an exterior of a substrate that includes smoothing the exterior using an ALD process to sequentially deposit ALD layers to produce one or more ALD films that fill spaces between spaced-apart asperities existing on the exterior, and thereafter depositing a reflective material on the smoothed exterior of the substrate to produce the optical surface. The smoothing resulting from depositing the ALD film on the exterior of the substrate causes the grain size of the reflective material to be reduced in comparison to the grain size that would exists without having deposited the ALD film on the exterior of the substrate. The smoothing is sufficient to cause a reduction in grain size that results in a reduction in plasmon absorption in the optical surface in comparison to the plasmon absorption that would otherwise exist without having reduced the grain size of the reflective material.

This invention discloses a method for preparing a (111) preferred-oriented perovskite thin film based on substrate control, comprising: providing a substrate; forming a SnO2 electron transport layer on the substrate; forming a zinc oxalate (ZnOX) interlayer on the electron transport layer; and preparing the perovskite active layer on the ZnOX interlayer using a two-step sequential deposition method, wherein the perovskite active layer has a (111) preferred orientation; in this invention, the interaction between oxalate anions and PbI2 induces the formation of a porous PbI2 film, which, combined with Zn... 2+ The defect compensation and lattice regulation effects of the embedded perovskite lattice successfully induced the growth of a (111) preferred orientation perovskite thin film with large grains (up to 3 μm in size) and low defect density, and the (111) / (100) peak intensity ratio was improved by nearly 5 times. This invention achieves the simultaneous optimization of perovskite thin film structure and device performance with a simple and effective interface modification strategy, providing a new path that is both scientific and practical for the industrialization of high-performance long-life perovskite solar cells.

The present application relates to a method (200) for inspecting a tyre building process comprising sequentially depositing on a drum (2) an ordered number of semi-finished product elements of N semi-finished product elements, the method comprising:-pre-determining (102) an ordered number of classes of N drum state classes, where a first class corresponds to a bare drum state, and a second class corresponds to a second drum state; and the i-th category corresponds to a drum state comprising an (i-1)-th semi-finished product element deposited at a radially outermost location, where i ranges from 2 to N; -said method comprising: prior to depositing the i-th semi-finished product element-acquiring (103) an image of the current drum state; -processing (104) the image to associate the current drum state with a current class of an ordered plurality of classes of the N drum state classes; -authorizing the deposition of said i-th semi-finished product element based on a comparison between said current category and a desired category, said desired category being an i-th category of said ordered plurality of categories.

An integrated semiconductor photodetector and its fabrication method are disclosed, relating to the field of integrated photodetector technology. This invention addresses the problems of existing detectors, such as limited functionality, insufficient responsivity, low integration, and difficulty in achieving synergistic miniaturization and high performance improvement. The method involves depositing a Cr conductive layer on the front side of a superlens substrate, uniformly coating the conductive layer surface with photoresist, pre-baking to prepare a dot-matrix mask pattern, developing and fixing followed by Ni deposition, and then stripping to obtain the Ni dot-matrix mask. ICP etching is used to remove the surface conductive layer, and a nanopillar array superlens structure is then fabricated. A photodetector layer is transferred to the back side of the substrate. Positive photoresist is spin-coated onto the substrate surface, pre-baking to prepare a source / drain electrode pattern, developing and fixing followed by sequential deposition of an adhesion layer metal and an electrode body metal layer. The metal layer in the non-electrode region is then stripped to obtain the metal electrode in contact with the photodetector layer, completing the detector fabrication. This invention can be applied to polarization imaging, space remote sensing, airborne detection, and optical communication.

A system for the fabrication of ε-phase MnAl / Co bilayer thin films, consisting of: a) a high-frequency magnetron sputtering system for the deposition of multilayer thin films on a silicon substrate, the sputtering system comprising: • a system for maintaining base pressure, configured to maintain a constant pressure; • three 2-inch targets consisting of MnAl, Co and Ta; and • a substrate rotation mechanism configured to rotate the substrate at a constant number of revolutions per minute; b) a layer deposition unit that is operationally connected to the RF magnetron sputtering system and enables the sputtering system to deposit layers sequentially: • a 3 nm thick Ta buffer layer on the silicon substrate; • a 60 nm thick MnAl layer on the Ta buffer layer; • a Co layer with a thickness of 1 nm to 5 nm on the MnAl layer; and • a 5 nm thick Ta top layer on the Co layer; c) an annealing furnace configured to anneal the deposited Ta and MnAl layers for 2 hours at 600 °C before the Co layer is deposited; and d) a characterization unit for analyzing the produced thin films, wherein the characterization unit comprises the following: • an X-ray diffraction (XRD) system for structural characterization; • an optical 3D profilometer for measuring surface structure and mean roughness; and • a field emission scanning electron microscope (FESEM) with energy-dispersive X-ray spectrometer (EDS) for analyzing surface morphology and elemental composition.

The invention discloses a gradient sodium-philic 3D porous current collector and a preparation method and application thereof, and relates to the technical field of battery materials. The 3D porous current collector comprises a base material, a sodium-philic layer on the surface of the base material and a stable layer on the surface of the sodium-philic layer; wherein the sodium-philic layer comprises a first sodium-philic layer which is electrochemically co-deposited or sequentially deposited and a second sodium-philic layer which is generated in situ when the sacrificial template is removed; the stabilizing layer is external to the second sodium-philic layer. The provided gradient sodium-philic 3D porous current collector is applied to a negative-electrode-free sodium battery and is used for enhancing initial and long-term sodium-philic performance and relieving volume expansion, so that long-term uniform and stable deposition of sodium ions on the current collector is realized, and finally, the coulombic efficiency of the negative-electrode-free sodium battery is improved and the cycle life of the negative-electrode-free sodium battery is prolonged.

The invention relates to the technical field of manufacturing of electronic materials and electronic components, in particular to a strippable carrier-attached copper foil with a bipolar thin copper layer and a preparation method of the strippable carrier-attached copper foil. The preparation method provided by the invention comprises the following steps: preparing a carrier copper layer; preparing a first inorganic stripping layer on the smooth surface of the carrier copper layer; preparing a first ultra-thin copper layer on the surface of the first inorganic stripping layer; preparing a second inorganic stripping layer on the surface of the first ultra-thin copper layer; preparing a second ultra-thin copper layer on the surface of the second inorganic stripping layer; carrying out hyperfine roughening treatment on the ultrathin copper layer; and constructing a non-copper functional layer on the surface of the roughened ultra-thin copper layer, and carrying out silane coupling agent coating treatment to obtain the strippable carrier-attached copper foil with the bipolar thin copper layer. The inorganic matter with good heat resistance is used as the stripping layer, the heat resistance of the carrier copper foil stripping layer is improved, the two ultra-thin copper layers are sequentially deposited on the surface of the carrier copper layer, the mSAP manufacturing procedure and the ETS manufacturing procedure can be met at the same time, and the production and processing cost is effectively reduced.

The subject matter described herein relates to laminated magnetic cores, methods of fabricating laminated magnetic cores, and electric devices using laminated magnetic cores. In some examples, a method for fabricating a laminated magnetic core includes depositing a first magnetic layer and depositing an interlamination layer of over the first magnetic layer. The interlamination layer comprises a partially conducting material having a conductivity greater than or equal to 10−4 S / cm and less than or equal to 105 S / cm. The method includes depositing a second magnetic layer over the interlamination layer. The method can include sequentially depositing additional interlamination layers and additional magnetic layers in an alternating fashion to produce the laminated magnetic core.

The present invention discloses a membrane structure and a method for manufacturing the same. The membrane structure is: Sub|((HL)^a(2H)^b(LH)^c(2L)^d)^e(HL)^a(2H)^b(LH)^c fL|Air; wherein Sub is the substrate, Air is the output medium air, H is a high-refractive-index material with an optical thickness of 1 / 4 the center wavelength, L is a low-refractive-index material with an optical thickness of 1 / 4 the center wavelength, and a, b, c, d, e, and f are all positive integers; wherein, (HL)^a represents the sequential deposition of the H film layer and the L film layer and is repeated a times; (2H)^b represents the sequential deposition of the H film layer and the H film layer and is repeated b times; (LH)^c represents the sequential deposition of the L film layer and the H film layer and is repeated c times; (2L)^d represents the sequential deposition of the L film layer and the L film layer and is repeated d times; ((HL)^a(2H)^b(LH)^c(2L)^d)^e represents the film stack (HL)^a(2H)^b(LH)^c(2L)^d repeated e times; fL represents the L film layer repeated f times. The technical solution of the embodiment of the present invention can be used to correct the relative ratio of the optical thickness of high and low refractive index materials while correcting the uniformity of the film thickness, and is accurate and efficient.

This invention relates to the field of alloy material processing technology, and discloses a preparation process for a lightweight, high-strength silver-plated copper alloy conductor for next-generation aerospace and marine engineering equipment. The process includes: vacuum melting of raw materials containing copper, lightweight reinforcing components, and microstructure stabilizing agents; obtaining wire through multiple cold drawing passes; pretreatment followed by sequential deposition of a transition layer and a silver plating layer, and then synergistic heat treatment. This application reduces density through lightweight reinforcing components, locks grain boundaries using microstructure stabilizing agents, and constructs a multi-scale strengthening system through cold drawing and heat treatment, significantly improving the tensile strength of the conductor. By setting a transition layer and a precision silver plating process, interfacial bonding is enhanced and atomic diffusion is suppressed, achieving a deep coupling of lightweight, high-strength, high-conductivity, and excellent environmental adaptability in the conductor.

An LED consisting of first and second p-n junctions sequentially deposited on the same wafer is provided. The first and second junctions have opposite n-layer and p-layer deposition sequences. One light emitting active region is embedded between the n-layer and the p-layer of the first junction, and the other light emitting active region is embedded between the n-layer and the p-layer of the second junction. The contacts are processed such that a forward current can pass through the two junctions in parallel using a single voltage source. For a given forward current, the LED operates at a lower voltage, with higher luminous flux and efficiency.

The invention belongs to the field of nuclear fuel cladding material surface engineering, and particularly relates to a gradient structure protective coating and a preparation method and application thereof. According to the method, the Cr layer, the Cr-Al-Si layer and the Cr-Al-Si-N layer are sequentially deposited, a three-layer structure with components and density in gradient transition is constructed, interlayer stress concentration is effectively avoided, and the binding force and toughness are improved. Wherein the grain size of the Cr-Al-Si intermediate layer is 25-45nm, and the Cr-Al-Si intermediate layer can accommodate and combine irradiation point defects; the surface Cr-Al-Si-N layer is of a composite structure with 5-15 nm nanocrystals wrapped by an amorphous matrix, a rapid defect annihilation channel is provided, and the anti-irradiation performance is synergistically enhanced. The method is completed through single-period sequential deposition, the process is easy and convenient to control, reproducibility is good, industrialization implementation is easy, and the prepared coating has excellent radiation resistance, high-temperature water vapor oxidation resistance and good film-substrate bonding strength.

The invention discloses a method for preparing a perovskite thin film in air based on tridecafluoroheptyl ethylene oxide, and belongs to the technical field of semiconductors. The method comprises the following steps: firstly, preparing a PbI2 precursor solution and an organic ammonium salt isopropanol solution, and then adding perdecafluoroheptyl ethylene oxide into the PbI2 precursor solution; a two-step sequential deposition method is adopted, the perovskite thin film is prepared in air, a PbI2 precursor solution added with perfluoroheptyl ethylene oxide is spin-coated, a PbI2 thin film growing on a highly layered surface is obtained after annealing, an organic ammonium salt solution is further spin-coated on the PbI2 surface, and the perovskite thin film is formed through solid-liquid reaction annealing. The residual amount of PbI2 in the high-quality perovskite thin film prepared by the method is reduced, crystal grains are obviously increased, and crystal boundaries are reduced. The photoelectric conversion efficiency of the perovskite solar cell prepared based on the method is also obviously improved, and the method has certain guiding significance for preparing the large-area perovskite solar cell in the air.

The invention provides a single-photon detector and a preparation method thereof, and relates to the technical field of single-photon detection. The aluminum-gallium-nitrogen absorption layer and the silicon carbide multiplication layer of different material systems are sequentially arranged on the sapphire substrate, and one side of the sapphire substrate and one side of the aluminum-gallium-nitrogen absorption layer are arranged as the light incidence side, so that incident light firstly passes through the aluminum-gallium-nitrogen absorption layer and is excited to generate current carriers, and then the current carriers are multiplied by the multiplication layer to generate internal gain; the detection sensitivity is improved. The aluminum gallium nitride absorption layer only absorbs the solar-blind wave band and transmits the wave band outside the solar-blind wave band, absorption of photons outside the solar-blind wave band when a silicon carbide absorption layer is adopted is avoided, light filtering in a light filter mode is avoided, and the detection responsivity is improved.

Provided are a thin-film liquid metal electrode, a method of fabricating the same using a sequential deposition, and a stretchable electronic device using the electrode fabricated therefrom. The thin-film liquid metal electrode may be applied to various application fields, such as a solar cell, a display, a biosensor, and a flexible / stretchable device using the thin-film liquid metal electrode by providing the thin-film liquid metal electrode in which at least two types of liquid metal nanoclusters are sequentially over-layered with an oxide film in therebetween and deposited as thin films on a surface-treated stretchable substrate in an over-layered structure, by fabricating the liquid metal nanoclusters in a no-direct contact structure, and by implementing negative piezoresistivity (NPR) property in which resistance decreases up to 85% during first 50% stretching since an additional electrical path is generated between two liquid metal nanoclusters as the oxide film is ruptured due to mechanical deformation.

The invention relates to a method for producing a microelectromechanical device (1) comprising a functional unit (2), at least one cavity (3), and a cap structure (4) that delimits the at least one cavity (3) and has at least one cavity access channel (5), wherein the at least one cavity (3) is provided between the cap structure (4) and the functional unit (2), wherein the cap structure (4) is produced by sequentially depositing and optionally structuring material layers (A1, A2, A3, M1, M2, M3, O1) on a cap substrate (6), the functional unit (2) is attached to the cap structure (4), and the at least one cavity access channel (5) is formed in the cap structure (4) by means of etching, wherein, during the production of the cap structure (4), an etch-stop structure (7) is created that covers the exit of the cavity access channel (5), projects into the cavity (3), and has an etch-stop element (8) and a first etch-stop region (9) arranged in the etch-stop element (8). The invention also relates to a micromechanical device (1).

Disclosed herein are systems and methods for producing structural color in layer-by-layer assemblies of Ti3C2Tz MXene nanosheets and polyelectrolyte heterostructures with controlled block thicknesses. In an aspect, the block thickness and spatial placement of MXene is controlled by the assembly's salt concentration and number of layer pairs. In a further aspect, to achieve controllable thicknesses in MXene blocks a processing method called layer-by-layer (LbL) assembly is employed. LbL assembly uses electrostatic interactions to alternately deposited layers of desired materials. In a still further aspect, layers of desired thicknesses can be built up by sequential deposition, allowing the creation of MXene blocks of specific thicknesses in order to attain structural color.

The present application relates to a kind of ternary auxiliary-based step-by-step solution deposition all-polymer organic photovoltaic device and its preparation method, belong to organic photovoltaic device preparation technical field, the present application selects the all-polymer system of current photoelectric conversion efficiency higher as intrinsic system, wherein polymer donor material is PBDB-T-2F, polymer acceptor material is PY-IT.In addition, polymer acceptor PDI-2T is selected as the third component, to modify the exciton diffusion behavior in intrinsic acceptor material PY-IT.Ternary (1+2) auxiliary step-by-step solution deposition strategy uses the preparation method of the order of first depositing 1 donor (PBDB-T-2F) and then depositing 2 blend acceptor (PY-IT:PDI-2T) to sequentially film forming.The method not only realizes the adjustment effect of sequential deposition strategy in ideal vertical phase distribution form, but also successfully retains the regulation effect of ternary strategy on exciton diffusion behavior.

Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.

The invention provides a preparation method of a photocathode. The preparation method comprises the following steps: providing a substrate, an alkali metal evaporation source and a non-metal evaporation source; and realizing non-metal intermittent deposition and alkali metal continuous deposition on the surface of the substrate by adopting an alkali metal evaporation source and a non-metal evaporation source in a high-vacuum environment so as to prepare the corresponding photocathode. According to the method, non-metal intermittent deposition and alkali metal continuous deposition are adopted, it is ensured that in the photocathode preparation process of different devices, different batches of photocathodes prepared by different persons keep almost consistent high quantum efficiency, and the quantum efficiency of 100% of the photocathodes is maximized; the non-substrate surface can be inhibited from generating a photocathode with high quantum efficiency by non-metal intermittent and alkali metal continuous deposition, and the interference of dark current in the preparation process is remarkably reduced; and compared with sequential deposition and co-evaporation, the preparation difficulty is greatly reduced, the consumption of an evaporation source is greatly reduced, the preparation time is shortened, the service life of the photocathode is prolonged, and a foundation is laid for realizing industrial full-automatic production of the photocathode.

The invention discloses a method for testing the crystallization rate of microcrystalline silicon of a solar cell. The method for testing the crystallization rate of the microcrystalline silicon of the solar cell comprises the following steps of: depositing an intrinsic amorphous silicon layer and a doped microcrystalline silicon film layer on a monocrystalline silicon substrate in sequence; depositing metal nanoparticles on the doped microcrystalline silicon film layer to form a metal nano film layer; and testing the crystallization rate of the doped microcrystalline silicon film layer. According to the method for testing the crystallization rate of the microcrystalline silicon of the solar cell, film coating testing is carried out on the monocrystalline silicon substrate, the influence of different substrates on film growth is solved, the Raman signal of the microcrystalline silicon doped with the microcrystalline silicon film layer is improved by coating the surface of the sample with the metal nanoparticle structure and utilizing the surface enhanced Raman effect of the metal nanoparticles, and the crystallization rate of the microcrystalline silicon doped with the microcrystalline silicon film layer is improved. The influence of the monocrystalline silicon substrate is reduced, the crystallization rate of the surface microcrystalline silicon can be analyzed more accurately, and the test accuracy is improved.

The invention discloses a characterization method for a nano structure of an X-ray photoetching grayscale mask, and relates to the technical field of micro-nano processing. The method comprises the following steps: before preparing a focused ion beam cross section, sequentially depositing a multi-layer composite protective film on the surface of a to-be-detected X-ray photoetching gray scale mask nanostructure, and sequentially comprising a first carbon layer, a first tungsten layer, a second carbon layer and a second tungsten layer from bottom to top; according to the structure, pollution of the tungsten layer is isolated through the carbon layer, the purity of interface component analysis is ensured, meanwhile, mechanical support and ion sputtering resistance are provided through the tungsten layer, the original three-dimensional shape of the nanostructure is protected, finally, focused ion beam cutting is carried out, and detection and analysis are carried out through a scanning electron microscope-energy dispersion X-ray spectrometer. Accurate characterization of the depth, the side wall morphology and the elemental components of the X-ray photoetching grayscale mask nanostructure is realized.

To provide formation or a repair method for a component with an overhang part and a related turbomachine blade.SOLUTION: When a component with an overhang part is formed or repaired, a portion is removed and a section is added. The section includes the overhang part. The addition includes sequentially laminating at least one of a plurality of material layers on the component. A dimension of the at least one of the plurality of material layers is closely similar to that of the section including the overhang part. The sequential lamination may include, for example, laser welding and may be performed in many methods for forming a changed layer in the overhang part. This method can include machining the at least one of the plurality of material layers and forming the section including the overhang part.SELECTED DRAWING: Figure 14

The invention discloses a high-stability solar cell based on perovskite layer doping and a preparation method thereof. The preparation method comprises the following steps: 1) cleaning a substrate; 2) preparing an electron transport layer; (3) preparing a perovskite layer: adding PbI2 into a mixed solution of DMF (Dimethyl Formamide) and DMSO (Dimethylsulfoxide), and then adding potassium perfluorobutanesulfonate to obtain a PbI2 mixed solution; adding FAI and MACl into the IPA solution to obtain an FAI solution; depositing a PbI2 mixed solution and an FAI solution on the compact tin dioxide thin film through a two-step sequential deposition method to form a perovskite layer; the perovskite layer prepared by adopting the preparation method disclosed by the invention has fewer composite centers, and the prepared solar cell has higher efficiency and better stability.

The invention belongs to the field of photoelectric materials and devices, and discloses a perovskite light-emitting diode based on biguanide salt intercalation and a preparation method thereof. The perovskite light-emitting diode sequentially comprises an anode substrate, a hole injection layer, a hole transport layer, a perovskite light-emitting layer, an electron transport layer, an electron injection layer and a metal cathode layer from bottom to top, wherein the perovskite light-emitting layer is formed by sequentially depositing CsX ', biguanide salt and PbX ''2 on the surface of the hole transport layer under a vacuum condition through an annealing reaction, and X' and X ''are independently selected from Cl, Br or I. According to the invention, the biguanide salt is introduced into the perovskite light-emitting layer through a sequential deposition process, so that dimension control of evaporation perovskite is realized, various defects in the perovskite light-emitting layer are effectively passivated, ion migration is inhibited, and the efficiency and stability of a device are remarkably improved.

The invention discloses a low-temperature silicon nitride sequential deposition method for improving adhesive force and regulating stress, which belongs to the technical field of low-temperature silicon nitride, and comprises the following steps: S1, pretreating a wafer to obtain a substrate; s2, a raw material with the radio frequency power of 1200-1400 W and the silicon-nitrogen ratio of 2: 1-5: 1 is used for deposition of a pre-activated layer; s3, a raw material with the radio frequency power being 900-1100 W and the silicon-nitrogen ratio being 1: 2-1: 5 is used for main body layer deposition; and S4, raw materials with the radio frequency power ranging from 1000 W to 1200 W and the silicon-nitrogen ratio ranging from 1: 2 to 1: 5 are used for generating a covering layer, the distance between the covering layer and the reactor ranges from 11 mm to 13 mm, and the sequentially deposited film is obtained. According to the method, the pre-activation layer, the main body layer and the covering layer are sequentially deposited, so that a gradient film structure from interface chemical enhancement to bulk phase function optimization to surface stress fine adjustment is realized, and the problems of poor film adhesion, uncontrollable stress and insufficient uniformity caused by low reaction activity in a low-temperature silicon nitride process are solved.

A method and system for checking a process for building a tyre including sequential deposition of an ordered plurality of N semi-finished elements on a drum. The method includes: establishing an ordered plurality of N classes of drum states, wherein a first class corresponds to a bare drum state and an i-th class corresponds to a drum state including the i-1th semi-finished element deposited in radially outermost position; before the deposition of the i-th semi-finished element: processing an acquired image of a drum state to associate to the current drum state a current class among the ordered plurality of N classes of drum states; authorising the deposition of the i-th semi-finished element based on a comparison between the current class and the expected class.

The invention discloses a high double-sided rate TOPCon battery based on a Poly Finger structure and a preparation method thereof. The preparation method comprises the following steps: S1, performing alkali texturing treatment to form a positive pyramid textured surface; s2, performing boron diffusion to form a boron diffusion layer; s3, removing borosilicate glass on the back surface; s4, polishing the substrate; s5, sequentially depositing a silicon dioxide tunneling oxide layer, a phosphorus-doped amorphous silicon layer and a silicon dioxide mask layer on the back surface; s6, performing annealing crystallization to obtain a phosphorus-doped polycrystalline silicon layer and a phosphorosilicate glass layer; s7, the phosphorosilicate glass is loosened through picosecond laser; s8, performing surface etching to form a Poly Finger structure; s9, polishing the back surface; s10, performing ink jet etching on a non-grid line area, and cleaning to obtain an inverted pyramid light trapping structure; s11, preparing an aluminum oxide passivation layer; s12, coating the front and back surfaces; and S13, preparing an electrode. The product prepared by the invention can significantly improve the back efficiency and the cell double-sided rate.

The invention provides a method for producing a perovskite material which comprises: i. The deposition of a first metal halide precursor; and ii. The deposition of a second metal halide precursor, wherein the halide component in the second metal halide precursor is different from that of the first metal halide precursor and the first and second metal halide precursors are deposited separately; and iii. The deposition of an inorganic halide precursor; and / or iv. The deposition of a first organic halide precursor; and v. Optionally, the deposition of a second organic halide precursor which is different from the first organic halide precursor; and vi. Optionally, the deposition of a third organic halide precursor which is different from the first and second organic halide precursors; to form the perovskite material which comprises a mixed halide; wherein steps i., ii., and iii., when present, are carried out by physical vapour deposition.