The invention discloses a self-aligned embedded gate
metal IGBT (Insulated Gate Bipolar Translator) and a manufacturing method. The self-aligned embedded gate
metal IGBT comprises a
semiconductor layer arranged on the front surface of a substrate, a
body region and a drift region which are arranged in the
semiconductor layer, and a source region arranged in the
body region, the pair of first side walls are arranged on the surface of the
semiconductor layer above the source region; the
trench gate is arranged in the semiconductor layer between the pair of first side walls and penetrates through the source region; the gate
metal is embedded between the pair of first side walls and is connected with the
trench gate; the source region contact groove is formed in the semiconductor layer on one side of the
trench gate; the source region contact metal is filled in the source region contact groove and is connected with the source region; the gate metal and the source region contact metal are respectively connected with the metal
interconnection layer through conductive contact holes; the collector region layer and the buffer region layer are arranged below the back surface of the substrate, and the collector layer is arranged on the back surface of the substrate. The invention can accelerate the conduction speed, increase the
switching frequency, reduce the number of photomasks, eliminate the
overlay error, reduce the device area, reduce the short-circuit resistance and improve the device performance.