2775results about "Lapping tools" patented technology

An artificial nail is provided, it comprises a nail flake, a guiding groove is provided on a top surface of the nail flake, the guiding groove has a groove depth of d, the guiding groove has a groove width of b, 0.05 mm≤d≤0.2 mm, and 0.05 mm≤b≤0.2 mm, and the guiding groove is used for guiding a user to draw a pattern or mount a decorative piece on the top surface of the nail flake. A guiding groove is provided on the nail flake, the guiding groove in the form of a groove has a certain depth and width, and the contour is clearly visible, so that it is easy to guide the user to make a design positioning on the nail flake and to complete the design quickly, for example, the user can be guided to draw a pattern or install a decorative piece on the nail flake; in addition, the guiding groove in the form of a groove can be filled in easily by the sealing layer applied to the top surface of the nail flake, which does not leave traces, so that the top surface of the nail flake is smooth and even; in addition, the guiding grooves in the form of grooves are more resistant to abrasion, and will not be easily sanded off, so even after sanding the top surface of the nail flake, the guiding grooves can still be clearly shown on the top surface of the nail flake.

The invention provides an ultrathin substrate polishing head and an ultrathin substrate polishing device.The ultrathin substrate polishing head comprises a polishing head body, a substrate holding part and a substrate holding ring, the substrate holding part and the substrate holding ring are both connected to the bottom of the polishing head body, the substrate holding ring is arranged on the periphery of the substrate holding part in a sleeving mode, an elastic film is arranged on the bottom face of the substrate holding part, and the elastic film is arranged on the bottom face of the substrate holding part. An adsorption hole is formed in the substrate holder in a penetrating manner, a through hole is formed in the elastic film, and the substrate holder is used for adsorbing the substrate to the bottom wall of the elastic film. According to the ultrathin substrate polishing device provided by the invention, the elastic film is arranged below the substrate holder, so that the adsorption force of the air bag on the substrate can be effectively buffered, the problems of non-uniform stress and overlarge local deformation of the substrate are avoided, the deformation quantity of the substrate in the grinding process is effectively controlled, the probability of occurrence of fragments is reduced, and the polishing quality of the ultrathin substrate is improved. The high flatness, uniformity and consistency of the surface of the substrate are improved, and meanwhile the polishing rate of the edge position of the substrate is increased.

The invention relates to a wafer polishing method and apparatus, a data processing apparatus, a program, and a storage medium. The polishing method comprises the following steps: loading a wafer to be polished; reading in a first polishing formula, and carrying out primary polishing on the wafer according to the first polishing formula; wafer parameters of all the partitions of the wafer are detected, whether the wafer parameters of all the partitions of the wafer reach the standard or not is judged, if yes, the wafer is unloaded, if not, a second polishing formula is obtained through the dynamic adjustment model according to the wafer parameters, and secondary polishing is conducted on the partitions, not reaching the standard, of the wafer based on the second polishing formula. And then returning to detect the wafer parameters of the partitions of the wafer again until the wafer parameters of all the partitions of the wafer are judged to reach the standard, and unloading the polished wafer. According to the method, the reworking function of multi-zone automatic triggering and time-pressure automatic combined adjustment can be achieved in the wafer polishing process, repeated treatment on the whole wafer is avoided, and material consumption and cost are reduced.

The invention belongs to the technical field of grinding tools, and relates to a grinding pad for CVD diamond rough polishing and a preparation method thereof.The grinding pad comprises a substrate and grinding blocks which are arranged on the substrate and provided with flat top faces, and the ratio of the diameter or the side length of each grinding block to the gap distance of the adjacent grinding blocks is (10-15): (1-1.5); the top of the grinding block is chamfered; the grinding block is prepared from the following raw materials: a diamond-silicon carbide grinding material, a binder, glass fibers and a filler; the roundness of the diamond-silicon carbide grinding material is 0.80-0.85, and the D50 particle size of the diamond-silicon carbide grinding material is 40-60 microns; the grinding pad has high strength and modulus, good stability and high grinding and polishing efficiency. The grinding blocks of the grinding pad are densely distributed, the grinding part is large, the grinding blocks are provided with chamfers and gaps, the CVD diamond can be prevented from being scratched in the polishing process, and chippings can be removed; the grinding material in the grinding pad is high in strength, good in self-sharpening performance and good in holding force, and therefore it can be guaranteed that the grinding pad has high grinding capacity in the rough polishing process, and the machining effect is good.

The invention discloses a mechanical polishing pad with a CMP composite groove and a preparation method of the mechanical polishing pad, and belongs to the technical field of polishing pads. The mechanical polishing pad comprises a polishing layer, a bonding layer and a substrate layer, and the polishing layer is bonded to the surface of the substrate layer through the bonding layer; the bonding layer is prepared from the following raw materials in parts by mass: 47 to 50 parts of EVA resin, 35 to 36 parts of tackifier, 8 to 12 parts of paraffin, 3 to 7 parts of filler and 0.5 to 2 parts of antioxidant. The mechanical polishing pad solves the problem that when an existing mechanical polishing pad is used, a groove of the mechanical polishing pad cannot well convey polishing liquid, the mechanical polishing pad cannot be well supported, and the mechanical polishing effect is poor. The polishing liquid conveying performance of the mechanical polishing pad can be improved, the mechanical polishing pad is prevented from deforming during polishing, it can be guaranteed that polishing pressure is evenly transmitted, the size stability and the compression permanent deformation resistance of the mechanical polishing pad can be improved, and the mechanical polishing effect can be effectively improved.

The embodiment of the utility model provides a polishing head and polishing equipment. The polishing head comprises a base, a polishing head and a driving device, the retaining ring is arranged below the base; the polishing head gas film is arranged on the base, is arranged on the inner side of the retaining ring and is used for fixedly holding the wafer; the retaining ring gas film is arranged on the inner side of the retaining ring and is arranged between the retaining ring and the polishing head gas film, the retaining ring gas film is in contact with the edge of the wafer when the retaining ring gas film is pressurized and expanded so as to apply acting force to the edge of the wafer, and the acting force forms radial clamping force and axial downward pressure on the edge of the wafer. Radial clamping force and axial downward pressure are applied to the edge of the wafer through the retaining ring gas film, the wafer can be clamped through the radial clamping force, the wafer is prevented from moving in the polishing process, and the risk of wafer sliding is reduced; the axial downward pressure can apply pressing force to the edge of the wafer in the wafer polishing process, the polishing effect of the edge of the wafer can be controlled more accurately, and the polishing consistency of the surface of the whole wafer is guaranteed.

A method comprises planarizing a substrate material with a functionalized chemical planarization pad. The functionalized chemical planarization pad includes a plurality of functional groups bonded to a material of the pad. The functional groups are configured to chemically react with the substrate material such that a portion of substrate material bonds to the functional groups. The pad is regenerated by applying a regeneration solution configured to break bonds between the functional groups and substrate material bonded to the functional groups to form removed material. The removed material is complexed in a dissolved complexing agent to form dissolved material in an effluent phase.

The utility model discloses a polishing head structure and polishing head drive device, wherein the polishing head structure includes bearing piece, flexible film and N pressure adjustment subassembly, N > = 2, the bearing piece includes side plate and transverse plate, side plate encloses to form the hollow cavity, transverse plate cover is provided the hollow cavity one side, flexible film and side plate inner side wall fixed connection, and the pressure adjustment subassembly is provided with the pressure adjustment subassembly. The flexible film is provided with a first surface and a second surface which are oppositely arranged, and the first surface is suitable for being attached to a to-be-polished part; any pressure adjusting assembly comprises at least one piezoelectric actuator and at least one pressure detection piece, the piezoelectric actuators are distributed on the second surface, the pressure detection pieces are located between the piezoelectric actuators and the flexible film, and the pressure detection pieces are used for obtaining pressure information generated by the corresponding piezoelectric actuators on the flexible film. Through cooperative use of the piezoelectric actuator and the pressure detection piece, the accuracy of the value of the pressure applied to the flexible film is improved, so that the planarization effect of the wafer is improved.

The invention provides a grinding disc, chemical mechanical polishing equipment and a detection method.The grinding disc comprises at least one finishing area and at least one scratch detection area which are arranged at the grinding end of the grinding disc, the finishing area is used for grinding a wafer, and the scratch detection area comprises a scratch detection material; whether the wafer has a scratch risk or not is judged by detecting whether the scratch detection material is scraped on the grinding pad by the hard particles or not in the wafer grinding process. In the wafer grinding process, if particles with relatively high hardness are generated on the grinding pad, when the particles with relatively high hardness are cleaned by the grinding disc, the scratch detection area is scratched by the particles with relatively high hardness, the scratch detection material is scratched on the surface of the grinding pad, and when the scratched scratch detection material is detected on the grinding pad, an alarm is triggered. Therefore, the wafer scratch can be timely and effectively detected in the wafer grinding process, the subsequent wafer is prevented from being continuously scratched by particles with relatively high hardness, and the yield of the wafer is improved.

A polishing pad and a chemical mechanical polishing apparatus are provided. The polishing pad includes: a central portion, designed with a central recess; and a peripheral portion surrounding the central portion, and designed with at least one peripheral recess. The at least one peripheral recess is disposed along an annulus contour. A lower part of the peripheral recess is greater than an upper part of the peripheral recess in terms of diameter area, and is different from the upper part in shape.

The invention relates to the technical field of three-step fine polishing methods for 19nm wafer regeneration, discloses a fine polishing method named'three-step fine polishing method for 19nm wafer regeneration ', and aims to solve the technical contradiction between macroscopic planarization and microscopic surface integrity of regenerated wafers in advanced process nodes. The method is characterized by comprising a first fine polishing step, a second fine polishing step and a third fine polishing step, and in each step, gradient decreasing polishing pad hardness, abrasive particle size and concentration, polishing pressure and pH value are adopted; and an on-line process monitoring and self-adaptive feedback control subsystem is used for assistance. By adopting the technical scheme, defects can be efficiently removed, damage can be repaired step by step, the wafer surface with ultralow defect density and excellent chemical stability is obtained, the requirements of the manufacturing process of 19nm and more advanced semiconductors are met, and the yield is increased.

The invention relates to a device and a method for photoelectrochemical mechanical polishing of a semiconductor substrate aiming at electric field uniform arrangement and light field intercoordination, and the device comprises a rack, a machine body unit, a polishing disc assembly, a conductive base, an LED ultraviolet light source, an electrochemical workstation and a moving assembly, the machine body unit is used for loading and unloading the polishing disc assembly; the electrochemical workstation and the LED light source power supply respectively supply power to the conductive base and the LED ultraviolet light source in the machining process, the LED ultraviolet light source is fixed on the polishing disc and acts on a semiconductor substrate workpiece in machining together with the polishing disc in the workpiece polishing process, and the semiconductor substrate workpiece is bonded on the conductive base. The LED light source directly irradiates the surface of a machined workpiece, the distance between the light source and a polishing solution is effectively shortened, the effect of a light field is improved, meanwhile, the intensity of the light field in different directions along the radius is adjusted, the light field and an electric field applied to the workpiece act together to guarantee uniform oxidation of the surface of the workpiece, and the flatness of the machined workpiece is guaranteed.

The invention discloses a device and a method for chemically and mechanically polishing a diamond substrate under the assistance of double modified multi-energy fields. By means of energy application and ultrasonic cavitation of ultrasonic vibration to a polishing solution and dual modification of strong ultraviolet light to a polishing disc and a diamond substrate, on the premise that the surface quality of polished diamond is guaranteed, the removal rate of a diamond polishing material is increased by increasing the mechanical removal rate, and the surface quality of the polished diamond is guaranteed. The problem that the chemical mechanical polishing material removal rate of the diamond substrate is low is solved. In the machining process, a polishing solution circulating system keeps that a polishing solution infiltrates a diamond substrate, the surfaces of the diamond and a polishing disc are subjected to oxidation modification, and an oxidation layer on the surface of the diamond is removed under the coupling action of ultrasonic, photocatalytic oxidation, electrochemical corrosion and mechanical grinding and polishing removal. Double modification of the diamond substrate and the polishing disc is achieved, the oxidation rate and the mechanical removal rate of the diamond substrate are increased, and the material removal rate and the polishing quality are improved.

The invention relates to a chemical mechanical grinding system and method for a hard and brittle semiconductor wafer, and the chemical mechanical grinding method comprises the following steps: preparing an oil-based thermal activity-optical activity composite grinding fluid by adopting an organic thermal decomposition type oxidizing agent, an organic optical decomposition oxidizing agent, polyethylene glycol, glycerol and vegetable oil; building an ultraviolet light-diamond abrasive grinding wheel chemical mechanical grinding platform which has an ultraviolet light irradiation function and is adjustable and controllable in irradiation intensity and ultraviolet light wavelength; the chemical mechanical grinding platform and the minimal quantity lubrication liquid supply device are started, and the wafer to be machined and the diamond abrasive grinding wheel are controlled to rotate relative to each other for opposite grinding; turning on an ultraviolet light generator to accurately irradiate the thermal activity-optical activity composite grinding liquid drops on the surface of the wafer, inducing a thermal decomposition type oxidizing agent and an optical decomposition type oxidizing agent to generate active free radicals by utilizing grinding heat energy and ultraviolet light irradiation energy, and initiating a free radical oxidation reaction of a wafer surface layer material to form an oxidation layer with low interface bonding force; the oxide layer on the surface of the wafer is removed through small-load micro-cutting of the diamond abrasive, and the semiconductor wafer with the subsurface almost free of mechanical damage is efficiently obtained.

The invention provides a bearing head for wafer processing and chemical mechanical polishing equipment. The bearing head comprises a bearing head main body; the retaining ring is arranged on one side, facing the wafer, of the bearing head main body, and the wafer is limited in the retaining ring; and an anti-slip sheet mechanism at least partially disposed in the retaining ring, the anti-slip sheet mechanism being configured to be axially retractable to retract into the retaining ring when the retaining ring abuts against the polishing unit and to protrude from the retaining ring when the retaining ring is axially separated from the polishing unit, the anti-slip sheet mechanism being made of a corrosion resistant material. According to the technical scheme, the wafer is effectively prevented from sliding out, the risk that the wafer is broken is reduced, and the effectiveness of the anti-slip sheet mechanism is guaranteed.

An example polishing system, such as an electrochemical mechanical polishing (ECMP) system, includes a polishing pad assembly having a polishing pad. The example polishing system includes a bias source. The example polishing system includes a workpiece carrier operable to bring the semiconductor workpiece into contact with the polishing pad. In some implementations, the polishing pad assembly is operable to provide an electrically conductive path for one or more charge carriers to the bias source.

The invention provides a chemical mechanical polishing film thickness real-time control method, device and equipment, and relates to the technical field of chemical mechanical polishing equipment. According to the invention, the optical sensing module is arranged in the vertical hole of the polishing disk, so that the reflected light intensity of the wafer can be monitored in real time in the CMP process. By adopting the optical sensing module, the corresponding relationship between the film thickness of samples with different thicknesses and the reflected light intensity is obtained. Therefore, the real-time film thickness can be determined in the CMP process according to the corresponding relation and the reflected light intensity monitored in real time, and chemical mechanical polishing film thickness real-time control is carried out on the target wafer. Time waste caused by multiple times of shutdown for film thickness detection in a traditional method is avoided, and the chemical mechanical polishing efficiency is improved.

Provided is an adhesive sheet for fixing a polishing pad for high-precision CMP processing, which is easy to adjust the reattachment position, has excellent air permeability, and also has excellent adhesive physical properties, and is a double-sided adhesive sheet for fixing the polishing pad to a surface plate. 【Solution means】 An adhesive sheet for fixing a polishing pad to a surface plate, comprising an adhesive layer A on one surface of a sheet-shaped base material, and an adhesive layer B on the other surface of the sheet-shaped base material, the surface of the adhesive layer A that is not in contact with the sheet-shaped base material has irregularities, and in the Bekk smoothness test, the smoothness of the said surface calculated | required on the following condition 1 is 1-100 second, the smoothness of the said surface calculated | required on the following condition 2 is 15-1125 second, An adhesive sheet for fixing a polishing pad, characterized by the above. Condition 1: The time until the pressure changes from -50.7 kPa to -48.0 kPa. Condition 2: The time until the pressure changes from -50.7 kPa to -29.3 kPa.

Printable resin precursor compositions and polishing articles including printable resin precursors are provided. Printable resin precursors include a curable precursor formulation having a viscosity of less than or about 15 cP at 70° which include at least one urethane acrylate oligomer, at least one reactive monomer, and a photoinitiator. The curable precursor formulation exhibits an ultimate tensile strength measured in mPa and an elongation at break (%), where a product of the ultimate tensile strength and the elongation at break is greater than or about 2,000.

The invention belongs to the technical field of grinding equipment, and particularly relates to a full-automatic valve grinding machine which comprises a base and a control box fixedly connected to the right side wall of the base, a PLC is fixedly connected to the right side wall of the base, and a clamping mechanism is fixedly connected to the upper side wall of the base. When the grinding machine is used for grinding the sealing door of the valve plate, a proper amount of grinding paste can be automatically dispensed and stricken on the grinding surface of the valve plate, the grinding quality of the valve plate is guaranteed, meanwhile, waste of the grinding paste is avoided, meanwhile, an operator does not need to manually smear and stricken the grinding paste, the workload of the operator is reduced, and the working efficiency is improved. According to the grinding machine, when the grinding material is used for grinding the grinding surface of the valve plate and the grinding surface of the valve plate, proper extrusion force can be kept between the grinding material and the grinding surface of the valve plate, the grinding performance of the valve plate is guaranteed, meanwhile, after the grinding material is consumed to a certain degree, an operator can be reminded to replace the grinding material in time, and the grinding quality of the grinding machine is further guaranteed.

The invention discloses automatic grinding equipment for ball bodies of ball valves, and relates to the field of ball grinding, the automatic grinding equipment comprises a machine body, the machine body is rotatably provided with an insertion rod, the insertion rod is vertically arranged, the insertion rod is in insertion connection with an insertion port of a ball body and forms coaxial rotation, and the machine body is provided with an abutting rod located on the upper side of the insertion rod in a lifting mode. An abutting rod is arranged on the machine body, the abutting rod abuts against the abutting plane of the ball, a mounting plate is arranged on the machine body in a swinging mode, two mounting bases are arranged on the mounting plate in a relative sliding mode, mounting discs are rotationally arranged on the mounting bases, and grinding discs are detachably connected into the mounting discs. Three clamping plates are arranged on the inner side of the mounting disc along the circumference, a clamping gap for clamping a grinding disc is formed among the three clamping plates, and a driving assembly for driving the three clamping plates to slide synchronously is arranged on the mounting disc. Different grinding discs can be disassembled and assembled so as to adapt to grinding machining of balls of different sizes, and the applicability is high.

The invention provides a system and method for inhibiting wafer scratching in double-sided polishing and double-sided polishing equipment. The system comprises: a shunt manifold valve group, which shunts a polishing liquid main flow path into at least three independent branches respectively corresponding to the inner, middle and outer areas of a polishing pad; the at least three online heating units are respectively arranged on each branch to independently heat the polishing solution; the temperature monitoring device comprises at least three temperature sensors which are arranged in different areas and is used for monitoring the temperature of the three areas in real time; and the control system independently regulates and controls the power of each heating unit based on temperature feedback, a preset non-uniform radial temperature gradient is established and maintained on the polishing pad, and the gradient is configured that the temperature of the middle area is not lower than that of the inner area, and the temperature of the inner area is higher than that of the outer area. Thermal deformation of the polishing pad is optimized through partitioned independent temperature control, and wafer scratching is effectively restrained.

The invention belongs to the technical field of ball valve machining equipment, and particularly relates to double-station ball valve ball body grinding equipment which comprises a rack, a grinding device, a grinding device and a grinding device. The fixing device is arranged on the machining fixed table and used for fixing a ball to be ground; the grinding device is arranged on the mounting seat and is used for grinding the fixed ball body; the spraying devices are arranged on the two sides of the machining table and used for spraying auxiliary media for grinding on the balls; the number of the fixing devices, the number of the polishing devices and the number of the spraying devices are all two. The double-station ball grinding machine has the beneficial effects that the double-station design is adopted to achieve an alternate operation mode, when grinding is conducted on one station, the other station can synchronously complete ball clamping or other work, the window waiting period of traditional single-station equipment is effectively eliminated, the utilization rate of the equipment is increased, and the machining efficiency is improved.

The invention relates to the technical field of semiconductors, and discloses a preparation method of a heat-conducting polyurethane polishing pad, which comprises the following steps: coupling a silane coupling agent with a hydroxylated inorganic heat-conducting material, and carrying out condensation reaction on silanol groups in the silane coupling agent and hydroxyl groups in the hydroxylated inorganic heat-conducting material to form Si-O-Si covalent bonds; bridging a hydroxylated inorganic heat-conducting material at one end of a silane coupling agent to obtain an intermediate; the intermediate is an inorganic heat-conducting material modified by a silane coupling agent; mixing the polyurethane prepolymer with the intermediate to form a mixed prepolymer, and curing the mixed prepolymer at a first temperature to obtain heat-conducting polyurethane; or curing the polyurethane prepolymer to obtain polyurethane, carrying out melt blending on the polyurethane and the intermediate at a second temperature, and curing at a first temperature to obtain heat-conducting polyurethane, in the heat-conducting polyurethane, polyurethane is bridged at the other end of the silane coupling agent. Compared with the prior art, the heat transfer and heat conduction performance of the polishing pad is effectively improved.

The utility model provides a wafer cleaning brush device and chemical mechanical polishing equipment. The wafer cleaning brush device comprises a cleaning brush body; the brush bars are arranged on the surface of the cleaning brush body at intervals, and the ends, away from the cleaning brush body, of the brush bars are brush heads; the limiting part is arranged on the brush head and partially covers the brush head, and the limiting part is used for limiting particles on the surface of the wafer. According to the cleaning brush, the limiting part is arranged on the brush head of the brush rod, particles on the surface of the wafer are limited through the limiting part, when the cleaning brush body rotates, the limiting part plays a role in pushing the particles limited by the limiting part, and the limiting part can easily strip the particles from the surface of the wafer under the cooperation of the chemical solution. The cleaning effect on the surface of the wafer is improved, and the product yield is prevented from being affected by particle residues.

The embodiment of the invention provides a polishing head, polishing equipment, a polishing method, a processor and a storage medium. Wherein the polishing head comprises: a base; the retaining ring is arranged below the base; the polishing head gas film is arranged on the base, is arranged on the inner side of the retaining ring and is used for fixedly holding the wafer; the retaining ring gas film is arranged on the inner side of the retaining ring and is arranged between the retaining ring and the polishing head gas film, the retaining ring gas film is in contact with the edge of the wafer when the retaining ring gas film is pressurized and expanded so as to apply acting force to the edge of the wafer, and the acting force forms radial clamping force and axial downward pressure on the edge of the wafer. Radial clamping force and axial downward pressure are applied to the edge of the wafer through the retaining ring gas film, the wafer can be clamped through the radial clamping force, the wafer is prevented from moving in the polishing process, and the risk of wafer sliding is reduced; the axial downward pressure can apply pressing force to the edge of the wafer in the wafer polishing process, the polishing effect of the edge of the wafer can be controlled more accurately, and the polishing consistency of the surface of the whole wafer is guaranteed.

The cutterhead cleaning assembly comprises a mounting base, a cleaning cylinder and a powder sweeping cylinder, and the mounting base is used for being detachably mounted on a grinding cavity of a machine body; the cleaning cylinder is movably arranged in the mounting seat in a penetrating manner and is used for covering the outer part of the inner cutter head; the inner side wall of the cleaning cylinder is provided with at least one set of first cleaning bristles used for making contact with the outer wall of the inner cutter head. The powder sweeping cylinder is rotatably arranged on the cleaning cylinder in a sleeving mode, and the bottom wall of the powder sweeping cylinder is provided with at least one set of second cleaning bristles which are used for making contact with the bottom of the grinding cavity and are in transmission fit with the powder sweeping plate. Wherein the first cleaning bristles are used for sweeping residues adhered to the outer wall of the inner cutter head when the inner cutter head rotates, and the second cleaning bristles are used for driving the powder sweeping plate to rotate together when the powder sweeping plate rotates and sweeping the swept residues to the powder outlet channel. Therefore, by the adoption of the cutter head cleaning assembly, trouble and labor are saved, the first cleaning brush bristles on the cleaning cylinder can clean the outer wall of the inner cutter head in an all-around mode, the problem that residual powder appears on the inner cutter head is avoided, and the cleaning effect is better; meanwhile, residues falling to the bottom of the grinding cavity can be completely swept out through second cleaning bristles on the powder sweeping barrel, so that the problem that residual powder appears in the grinding cavity is avoided, and cleanliness and sanitation of the grinding cavity are guaranteed.

The invention relates to the field of polyurethane polishing materials, and discloses a polyurethane polishing pad and a preparation method thereof. The polyurethane polishing pad is prepared from the following raw materials in parts by weight: 35-45 parts of diisocyanate, 15-20 parts of polycarbonate polyol, 8-14 parts of polyether polyol, 50-60 parts of a modified abrasive, 4-8 parts of a chain extender, 2-4 parts of a catalyst, 0.5-1.5 parts of a foaming agent and 1-3 parts of an antioxidant, the modified abrasive material is prepared from an abrasive material, a silane coupling agent, dimer acid diglycidyl ester and 4-hydroxybutyl vinyl ether; the grinding material is a combination of at least two of cerium oxide, zirconium oxide and / or aluminum oxide. The polyurethane polishing pad is suitable for fine grinding and polishing of sapphire optics, silicon carbide wafer metal and glass materials, the mirror surface effect can be achieved, good polishing stability and polishing smoothness are achieved, and the problems of scratching and uneven polishing are not prone to occurring after long-term polishing.

According to the polishing pad provided by the embodiment of the invention, in addition to the first grooves in the concentric form, the second grooves in the radial form, which are specially designed, are adopted, so that the flowability of slurry can be improved, and the wafer curve and the polishing rate can be changed.

To provide a top ring or a substrate polishing apparatus capable of making a polishing profile more uniform on the central side of a square substrate and the outer edge side of the substrate.SOLUTION: A top ring for holding a polygonal substrate includes: a base member which is connected to a rotation shaft; a substrate suction member which includes a substrate suction body that has a substrate suction surface for suctioning the substrate and communicates with a decompression module, a shielding member that is configured to cover the side of the substrate suction body opposite to the substrate suction surface, and a frame member that is connected to the shielding member so as to surround at least a portion of the periphery of the base member; and a biasing mechanism which has a first end in contact with the base member and a second end in contact with the frame member, and applies a biasing force in a direction that brings the base member and the frame member close to each other or separates them from each other.SELECTED DRAWING: Figure 3