1561results about "Lapping tools" patented technology

The invention discloses a mechanical polishing pad with a CMP composite groove and a preparation method of the mechanical polishing pad, and belongs to the technical field of polishing pads. The mechanical polishing pad comprises a polishing layer, a bonding layer and a substrate layer, and the polishing layer is bonded to the surface of the substrate layer through the bonding layer; the bonding layer is prepared from the following raw materials in parts by mass: 47 to 50 parts of EVA resin, 35 to 36 parts of tackifier, 8 to 12 parts of paraffin, 3 to 7 parts of filler and 0.5 to 2 parts of antioxidant. The mechanical polishing pad solves the problem that when an existing mechanical polishing pad is used, a groove of the mechanical polishing pad cannot well convey polishing liquid, the mechanical polishing pad cannot be well supported, and the mechanical polishing effect is poor. The polishing liquid conveying performance of the mechanical polishing pad can be improved, the mechanical polishing pad is prevented from deforming during polishing, it can be guaranteed that polishing pressure is evenly transmitted, the size stability and the compression permanent deformation resistance of the mechanical polishing pad can be improved, and the mechanical polishing effect can be effectively improved.

The embodiment of the utility model provides a polishing head and polishing equipment. The polishing head comprises a base, a polishing head and a driving device, the retaining ring is arranged below the base; the polishing head gas film is arranged on the base, is arranged on the inner side of the retaining ring and is used for fixedly holding the wafer; the retaining ring gas film is arranged on the inner side of the retaining ring and is arranged between the retaining ring and the polishing head gas film, the retaining ring gas film is in contact with the edge of the wafer when the retaining ring gas film is pressurized and expanded so as to apply acting force to the edge of the wafer, and the acting force forms radial clamping force and axial downward pressure on the edge of the wafer. Radial clamping force and axial downward pressure are applied to the edge of the wafer through the retaining ring gas film, the wafer can be clamped through the radial clamping force, the wafer is prevented from moving in the polishing process, and the risk of wafer sliding is reduced; the axial downward pressure can apply pressing force to the edge of the wafer in the wafer polishing process, the polishing effect of the edge of the wafer can be controlled more accurately, and the polishing consistency of the surface of the whole wafer is guaranteed.

A method comprises planarizing a substrate material with a functionalized chemical planarization pad. The functionalized chemical planarization pad includes a plurality of functional groups bonded to a material of the pad. The functional groups are configured to chemically react with the substrate material such that a portion of substrate material bonds to the functional groups. The pad is regenerated by applying a regeneration solution configured to break bonds between the functional groups and substrate material bonded to the functional groups to form removed material. The removed material is complexed in a dissolved complexing agent to form dissolved material in an effluent phase.

The invention relates to the technical field of three-step fine polishing methods for 19nm wafer regeneration, discloses a fine polishing method named'three-step fine polishing method for 19nm wafer regeneration ', and aims to solve the technical contradiction between macroscopic planarization and microscopic surface integrity of regenerated wafers in advanced process nodes. The method is characterized by comprising a first fine polishing step, a second fine polishing step and a third fine polishing step, and in each step, gradient decreasing polishing pad hardness, abrasive particle size and concentration, polishing pressure and pH value are adopted; and an on-line process monitoring and self-adaptive feedback control subsystem is used for assistance. By adopting the technical scheme, defects can be efficiently removed, damage can be repaired step by step, the wafer surface with ultralow defect density and excellent chemical stability is obtained, the requirements of the manufacturing process of 19nm and more advanced semiconductors are met, and the yield is increased.

An example polishing system, such as an electrochemical mechanical polishing (ECMP) system, includes a polishing pad assembly having a polishing pad. The example polishing system includes a bias source. The example polishing system includes a workpiece carrier operable to bring the semiconductor workpiece into contact with the polishing pad. In some implementations, the polishing pad assembly is operable to provide an electrically conductive path for one or more charge carriers to the bias source.

The invention provides a system and method for inhibiting wafer scratching in double-sided polishing and double-sided polishing equipment. The system comprises: a shunt manifold valve group, which shunts a polishing liquid main flow path into at least three independent branches respectively corresponding to the inner, middle and outer areas of a polishing pad; the at least three online heating units are respectively arranged on each branch to independently heat the polishing solution; the temperature monitoring device comprises at least three temperature sensors which are arranged in different areas and is used for monitoring the temperature of the three areas in real time; and the control system independently regulates and controls the power of each heating unit based on temperature feedback, a preset non-uniform radial temperature gradient is established and maintained on the polishing pad, and the gradient is configured that the temperature of the middle area is not lower than that of the inner area, and the temperature of the inner area is higher than that of the outer area. Thermal deformation of the polishing pad is optimized through partitioned independent temperature control, and wafer scratching is effectively restrained.

The invention relates to the technical field of semiconductors, and discloses a preparation method of a heat-conducting polyurethane polishing pad, which comprises the following steps: coupling a silane coupling agent with a hydroxylated inorganic heat-conducting material, and carrying out condensation reaction on silanol groups in the silane coupling agent and hydroxyl groups in the hydroxylated inorganic heat-conducting material to form Si-O-Si covalent bonds; bridging a hydroxylated inorganic heat-conducting material at one end of a silane coupling agent to obtain an intermediate; the intermediate is an inorganic heat-conducting material modified by a silane coupling agent; mixing the polyurethane prepolymer with the intermediate to form a mixed prepolymer, and curing the mixed prepolymer at a first temperature to obtain heat-conducting polyurethane; or curing the polyurethane prepolymer to obtain polyurethane, carrying out melt blending on the polyurethane and the intermediate at a second temperature, and curing at a first temperature to obtain heat-conducting polyurethane, in the heat-conducting polyurethane, polyurethane is bridged at the other end of the silane coupling agent. Compared with the prior art, the heat transfer and heat conduction performance of the polishing pad is effectively improved.

Systems and methods for polishing semiconductor workpieces are provided. In one example, the polishing system includes a platen operable to rotate about an axis. The polishing system further includes a polishing pad on the platen. The polishing system further includes a workpiece carrier operable to bring a semiconductor workpiece into contact with the polishing pad. The polishing pad includes a first zone and a second zone.

Grinding systems and methods for semiconductor workpieces are provided. In one example, a grinding system includes a workpiece support operable to support a semiconductor workpiece and rotate the semiconductor workpiece about a first axis. The grinding system further includes a grind wheel operable to rotate about a second axis. The grind wheel has a plurality of grinding teeth arranged in a grinding ring on the grind wheel. A radius of the grinding ring is less than or equal to a radius of the semiconductor workpiece (e.g., such that an effective gap ratio between grinding teeth on the grind wheel are reduced).

The invention relates to the technical field of semiconductors, in particular to a device and a method for automatically adjusting the depth of a groove of a 12-inch wafer polishing pan head, and aims to solve the problem that in the prior art, due to fluctuation of the initial thickness of a to-be-processed wafer, the thickness of the to-be-processed wafer is influenced. The polishing process adaptability is poor; the production efficiency is low; and the consistency of the polishing quality is difficult to control. The device comprises an online thickness measuring module, an adjustable groove polishing head module and a system control unit. The polishing head module is internally provided with a flexible hinge coupling type annular segmented array, a micro-drive actuator, a displacement sensing feedback network and a magnetorheological fluid damping locking system. According to the method, the initial thickness of a wafer is measured in a high-precision mode, the depth of a groove is calculated and adjusted in a feedforward mode, accurate execution and locking are achieved, and collaborative polishing and process dynamic compensation are carried out. According to the invention, accurate, rapid and spatially distinguished automatic adjustment of the groove depth of each wafer can be realized, and the automation level, the processing efficiency and the product quality of the polishing process are remarkably improved.

The invention belongs to the technical field of wafer polishing, and discloses a silicon carbide wafer electrochemical mechanical polishing device and a silicon carbide wafer electrochemical mechanical polishing process. The polishing head is provided with an electric brush, a metal ring, a copper spring and a copper column and is connected with a power supply anode through a wire; through holes are punched in the surface of the polishing pad, and the silicon carbide wafer adheres to the surface of the copper cylinder through conductive glue. In the rough polishing stage, hard abrasive particles are used for polishing under high potential, and surface scratches and deep damage are rapidly removed; and in the fine polishing stage, soft abrasive particles are used, potential is gradually reduced for polishing, shallow layer damage is removed, and the smooth and defect-free silicon carbide wafer is obtained. According to the electrochemical mechanical polishing device and process for the silicon carbide wafer, the silicon carbide slice can be rapidly machined into a smooth and defect-free surface within a short time, the polishing process of the silicon carbide is simplified, meanwhile, edge breakage and serious scratches generated by grinding are avoided, and the machining time and cost needed in the manufacturing process of the silicon carbide wafer are reduced.

The invention relates to a polishing performance evaluation method and device and a polishing system for improving the polishing performance. The polishing performance evaluation method comprises the steps that the track lengths of all abrasive particles of a polishing disc are obtained; based on the track lengths of all the abrasive particles, calculating to obtain a track average value and a variance; and based on the trajectory average value and the variance, trajectory distribution uniformity is obtained through calculation. The wafer polishing device has the advantages that the rotating motion of the polishing disc unit and the linear motion of the polishing pad unit are combined, so that the wafer polishing uniformity can be improved, the polishing time is shortened, and the polishing efficiency is improved; the rotating motion of the polishing disc unit and the linear motion of the polishing pad unit are combined, so that uneven abrasion of the polishing pad unit can be avoided, the service life of the polishing pad unit is prolonged, and the cost is reduced.

The invention relates to a photoetching ordered microcosmic fixed abrasive polishing pad and a preparation method thereof. Compared with the prior art, the method has the advantages that the to-be-photoetched surface of the substrate is photoetched according to the photoetched pattern, so that the plurality of microscopic grinding columns are orderly distributed and formed on the grinding material base according to the preset distribution and arrangement mode, the distribution shape, direction and position of the microscopic grinding columns on the grinding material base are kept unchanged, and regular distribution and uniform distribution can be presented; the distribution and the size of the micro grinding columns can be adjusted according to the photoetching pattern to meet different polishing requirements, then the micro grinding columns of the substrate are compositely filled with the filling body to keep the stability of the micro grinding columns, and the polishing pad can be suitable for the micro level to meet the requirement of the manufacturing procedure below 5nm, so that the production efficiency is improved, and the production cost is reduced. The microcosmic grinding columns are formed through photoetching to replace traditional grinding particles, the chemical stability of the polishing pad during polishing is improved, the removal rate is increased, the surface roughness is reduced, and the polishing effect of the polishing pad on a polishing product is improved.

The invention discloses adjustable machining grinding equipment, and relates to the technical field of machining. According to the equipment, a multi-dimensional adjusting mechanism is innovatively integrated, a sliding block is driven through a rotatable double-thread lead screw, stepless adjustment of the grinding radius is achieved, and the equipment is suitable for machining of the inner diameters of workpieces of different sizes; and in combination with a dynamic balance weight system, vibration in high-speed grinding is effectively inhibited, and the stability is improved. Meanwhile, a pneumatic-servo cooperative control system is adopted, stepless switching of the grinding pressure in the four stages of light pressure, medium pressure, heavy pressure and fine grinding is supported, the revolution-rotation speed ratio of the grinding disc to the workpiece is synchronously regulated and controlled, and the uniformity of the grinding track is optimized. In addition, the equipment is provided with a PLC program control module and a touch screen interface, 30 sets of technological parameters can be preset and stored, one-key calling is achieved, and the machining efficiency and consistency of complex parts are remarkably improved. According to the design, the adaptability of the equipment to sapphire substrates, gears and hard alloy special-shaped high-hardness workpieces is greatly expanded.

The invention discloses a surface consistency processing method and system for semiconductor parts, and relates to the technical field of semiconductor manufacturing. The method comprises the steps that the thickness of a polishing pad, the depth of a groove, the pH value of grinding liquid and the concentration of grinding materials are uploaded, part surface features are synchronously collected, and a polishing state map is set; generating a compensation vector based on the map in combination with a precision demand; dynamically adjusting a standard polishing path according to the compensation vector, and determining M targets and N adjacent coordinates to form a region unit; and deploying a digital twinborn simulation rehearsal compensation scene, establishing a parameter adaptive mechanism in combination with reinforcement learning, and optimizing regional resource allocation. The technical problems that in the precise polishing process of semiconductor parts, due to traditional fixed path polishing, local polishing is uneven, and the surface consistency is poor are solved, self-adaptive adjustment and surface consistency optimization of area machining precision are achieved through dynamic polishing compensation based on digital twinning and reinforcement learning, and the precision of the semiconductor parts is improved. And the surface appearance uniformity and the polishing efficiency of the part are improved.

The utility model provides a photoelectrocatalysis assisted chemical mechanical polishing device which comprises a platform, a polishing disc, a transparent polishing pad, a polishing head, a photosensitive polishing solution swing arm and an ultraviolet lamp bead, the polishing disc is rotationally connected to the upper portion of the platform, and the transparent polishing pad is arranged on the polishing disc in a stacked mode. The photosensitive polishing liquid swing arm is connected to the platform and used for spraying polishing liquid to the transparent polishing pad layer, a liquid passing hole is formed in the transparent polishing pad layer in a penetrating mode, the polishing head is connected with the positive electrode of the power source, the polishing disc is connected with the negative electrode of the power source, and the ultraviolet lamp beads are embedded in the polishing disc. According to the photoelectrocatalysis-assisted chemical mechanical polishing device provided by the utility model, the photosensitive polishing solution swing arm is used for spraying the photosensitive polishing solution, and the ultraviolet lamp beads are arranged on the polishing disc, so that ultraviolet light irradiates the photosensitive polishing solution or a wafer below the polishing head through the transparent polishing pad, and strong-oxidation active groups are synchronously generated; the oxidation rate of silicon carbide on the surface of the wafer is improved, and the polishing efficiency of the wafer is improved.

The invention provides a three-axis three-phase variable-speed ultraprecise microsphere grinding and polishing device and a grinding and polishing method, and belongs to the technical field of high-precision spherical part machining. By adjusting three sets of servo grinding head assemblies, output shafts (a first shaft, a second shaft and a third shaft) of the three sets of servo grinding head assemblies intersect at the sphere center of a machined sphere; the alignment precision of the three servo grinding head assemblies relative to the center of the ultra-precision microsphere is improved; meanwhile, output shafts of the three servo grinding head assemblies are controlled to rotate at a variable speed according to the sine rule, it is guaranteed that the motion trails formed by the three servo grinding head assemblies are evenly distributed on the surface of the machined ball and can completely wrap the surface of the machined ball, and sliding of the ultra-precise microspheres in the machining process is avoided; and the stability in the ultra-precision microsphere processing process can be ensured.

A body is brought into contact with a polishing pad of a polishing system, a polishing liquid is supplied to the polishing pad, relative motion between the body and the polishing pad is generated while the body contacts the polishing pad, a signal from an in-situ eddy current monitoring system during the relative motion while the body contacts the polishing pad, generating, and mechanical vibrations in the polishing system are detected based on a signal from the in-situ eddy current monitoring system.

The invention relates to the technical field of semiconductor manufacturing, in particular to a photo-assisted catalytic diamond chemical mechanical polishing device, which solves the problems of low photocatalytic efficiency and low processing efficiency in the prior art, and comprises a bracket, a rotating platform and a working turntable for loading diamond wafers are arranged on the bracket, and an annular baffle plate is arranged on the outer side of the rotating platform. The rotating platform and the annular baffle are matched to form a containing groove, an annular polishing pad and a middle ultraviolet light source are arranged on the rotating platform, the middle ultraviolet light source is located in the center of the annular polishing pad, a side edge ultraviolet light source is arranged on the inner side of the annular baffle, and the annular polishing pad and the middle ultraviolet light source both correspond to the working rotary table in position; the containing groove is filled with polishing liquid, and the annular polishing pad, the side edge ultraviolet light sources and the middle ultraviolet light source are all immersed in the polishing liquid. The device has the beneficial effects that the design that the middle ultraviolet light source and the side ultraviolet light sources cooperatively irradiate is adopted, and the promoting effect of photocatalysis on the chemical reaction on the surface of the diamond is enhanced.

The utility model discloses a diamond grinding brush applied to glass and ceramics, and relates to the technical field of diamond grinding brushes, the diamond grinding brush comprises a mounting disc and a diamond brush head, the front surface of the mounting disc is provided with a front positioning groove, the back surface of the mounting disc is provided with a back positioning groove, and the back surface of the diamond brush head is fixedly provided with a connecting plate; a connecting block is fixedly installed on the side, away from the diamond brush head, of the connecting plate, an inserting hole is formed in the inner side of the connecting block, and the side, close to the connecting block, of the diamond brush head is inserted into the inner side of the front positioning groove. By the adoption of the structure, after the clamping spring and one fixing bolt are taken down, the limiting frame is pulled out, and at the moment, the spring in the mounting cavity resets to push the limiting plate to move and drive the insertion block to be separated from the insertion hole of the connecting block, so that the diamond brush head can be conveniently and rapidly disassembled, assembled and replaced.

A pad-surface determination method that can appropriately determine a surface property of a polishing pad including a condition of protrusions formed on a polishing surface of the polishing pad is disclosed. The pad-surface determination method includes: irradiating a target area in the polishing surface with a plurality of lights from a plurality of light emitters at different incident angles; receiving a plurality of reflected lights from the target area by an imaging device; generating a plurality of images corresponding to the different incident angles by the imaging device; and determining the surface property of the polishing pad based on at least one of the plurality of images. A protrusion is formed on the polishing surface in the target area.

An object 102 to be polished is resin-sealed in a resin-sealed sample 105. The resin-sealed sample 105 is gripped by a holder 721 of a robot arm, and the bottom surface of the resin-sealed sample 105 is pressed against a polishing table 107 to polish a target surface 602. A cleaning liquid is applied to the polishing table 107 from a cleaning liquid supply nozzle 207. The target surface 602 is covered with the cleaning liquid. Light from a light emitter 201 passes through a polarizing plate 202a, and the target surface 602 is irradiated with polarized light 205a. Reflected light, which is the polarized light 205a reflected off the target surface 602, passes through a polarizing plate 202b, and the reflected light 205b enters a camera 206.

The present application relates to a kind of ball mill, comprising: driven rotation lower grinding disc, the upper surface of the lower grinding disc is equipped with spiral groove for placing ball, the spiral groove has the inlet in the center and the outlet at the edge;Driven lifting upper grinding disc, set in the upper of the lower grinding disc, for the ball on the spiral groove is applied pressure;Circulation channel, inside the lower grinding disc is equipped, the circulation channel is communicated the inlet and the outlet;Wherein, the upper grinding disc is opened with the center area of the inlet corresponding avoiding hole, the spiral groove includes the guide section corresponding the avoiding hole and the working section corresponding the upper grinding disc.Ball is polished by the ball mill, in the whole processing, the moving track of all balls, processing times, grinding time is close to complete coincidence, so that smaller ball batch diameter variation can be obtained, eliminate or reduce the original existence screening or again processing.

Examples of planarizing a substrate without using an abrasive are disclosed. One example provides a method of chemically planarizing a substrate, the method comprising: introducing an abrasive-free planarization solution onto a porous pad; contacting the substrate with the porous pad while moving the porous pad and the substrate relative to each other such that a higher portion of the substrate is in contact with the porous pad and a lower portion of the substrate is not in contact with the porous pad; and removing material from the higher portion of the substrate by contact with the porous pad to reduce the height of the higher portion of the substrate relative to the lower portion of the substrate.

The invention discloses a chemical mechanical polishing pad with an improved service life and a machining method and application thereof.The chemical mechanical polishing pad comprises a polishing layer, the polishing layer is provided with a rotation center, a polishing track area and radial grooves, the polishing track area and the radial grooves are concentric with the rotation center, and annular micro grooves are formed in the polishing track area; the orientation of the annular micro-groove is based on a vortex and source flow function of the movement of a polishing medium during polishing, and a vertical function of the function is taken. According to the design of the annular micro grooves, the optimal attack angle and the proper depth can be derived according to the boundary conditions of vortex and source flow, the same angular pitch is repeated, the polishing layer is divided into different areas through the adjacent radial grooves, and therefore the effects of area oscillation and pulse generation are achieved, the use area of the polishing layer is enlarged, and the service life of the polishing layer is indirectly prolonged; and the in-chip and inter-chip uniformity can be improved.

The invention discloses an electrochemical mechanical polishing head, a polishing device and a polishing method, and belongs to the technical field of wafer manufacturing. The electrochemical mechanical polishing head comprises a coupling disc and a polishing head, wherein a positioning hole is formed in the center of the coupling disc; the bearing disc is provided with a shaft part in a matched mode, and the shaft part is connected into the positioning hole in a sliding mode, so that the bearing disc rotates along with the coupling disc and / or moves in the vertical direction; the conductive elastic film is arranged below the bearing disc and is used for loading a wafer to be processed; the retaining ring is arranged below the bearing disc and is positioned on the peripheral side of the elastic film; the electric connection assembly is vertically arranged in a mounting hole configured along the shaft part, one end of the electric connection assembly is connected with a power supply, and the other end of the electric connection assembly is connected with a central cavity of the elastic film, so that a wafer to be processed is located in an electric field formed between the elastic film and the polishing solution; at least part of the electric connection assembly is a flexible part and stretches out and draws back in the vertical direction to adapt to deformation of the elastic film, and then a stable electric field is formed between the elastic film and the polishing solution.

A method includes depositing a slurry onto a polishing pad of a chemical mechanical polishing (CMP) station. A workpiece is polished and polishing by-products and slurry are removed from the polishing pad by a vacuum head. A CMP apparatus includes a polishing pad configured to rotate during a CMP process. The apparatus also includes a slurry dispenser configured to deposit a slurry onto a polishing surface of the polishing pad. The apparatus further includes a momentum vacuum assembly including a slotted opening facing the polishing surface of the polishing pad. The apparatus also includes a first suction line coupled to an upper portion of the momentum vacuum assembly and leading to a first vacuum source, the first suction line configured to transport polishing products which have been removed from the polishing pad through the slotted opening.

An integrated cleaning and liquid supply device and online cleaning method for polyurethane polishing pads are disclosed. The device includes a base, a rotating seat, a swing arm, an independent liquid supply pipeline system and cleaning pipeline, a high-pressure nozzle array, and a positioning sensor assembly. During the polishing stage, polishing liquid is dripped through the liquid supply outlet. During the cleaning stage, the swing arm moves centripetally to a preset position aligned with the center of the polishing pad. The positioning sensor triggers a high-pressure pump, causing pure water to be sprayed as an atomized jet along the diameter of the pad surface through the high-pressure nozzle array. Simultaneously, the polishing pad rotates at a low speed, utilizing the synergistic effect of centrifugal force and high-pressure water flow to thoroughly remove residual contaminants within the micropores of the polyurethane. This invention integrates liquid supply and deep cleaning functions into the same motion mechanism, eliminating the need for machine shutdown or manual intervention. It offers advantages such as non-contact, non-destructive, thorough cleaning, and high automation, extending the life of the polishing pad and improving the stability of the CMP process.

The invention provides a polyurethane polishing pad and a preparation method thereof, the polyurethane polishing pad comprises a polyurethane mixture, the polyurethane mixture comprises a polyurethane prepolymer, a curing agent and a heat dissipation filler; in the polyurethane mixture, the mass percent of the polyurethane prepolymer is 50%-90%, the mass percent of the curing agent is 10%-30%, and the mass percent of the modified filler is 1%-10%; the water-soluble polymer compound system comprises polyvinylpyrrolidone, carboxymethyl cellulose and polyethylene glycol, the water-soluble polymer compound system is characterized in that the polyvinylpyrrolidone and the carboxymethyl cellulose are grafted to form a grafted copolymer, the grafted copolymer is compounded with the polyethylene glycol, and the mass ratio of the polyvinylpyrrolidone to the carboxymethyl cellulose in the grafted copolymer is 10: (1-2). The heat dissipation filler is added into the polyurethane, so that an effective heat dissipation effect can be achieved, the polishing uniformity is prevented from being affected by overheating of the polishing pad and the wafer, and the surface temperature of the polished wafer is moderate.

A polishing pad for chemical mechanical polishing of a substrate (e.g., a semiconductor wafer) comprises a polishing layer, a subpad layer, a top window portion, bottom window portion, and a support. The support extends from the polishing layer toward and is adjacent to a top window peripheral surface. The bottom window portion has a larger cross-section than the top window portion. The pad includes a gap between the bottom window peripheral surface and the subpad material. The pad can be used for endpoint using optical detection, acoustic detection, or both.