1989results about "Lapping tools" patented technology

The invention discloses a mechanical polishing pad with a CMP composite groove and a preparation method of the mechanical polishing pad, and belongs to the technical field of polishing pads. The mechanical polishing pad comprises a polishing layer, a bonding layer and a substrate layer, and the polishing layer is bonded to the surface of the substrate layer through the bonding layer; the bonding layer is prepared from the following raw materials in parts by mass: 47 to 50 parts of EVA resin, 35 to 36 parts of tackifier, 8 to 12 parts of paraffin, 3 to 7 parts of filler and 0.5 to 2 parts of antioxidant. The mechanical polishing pad solves the problem that when an existing mechanical polishing pad is used, a groove of the mechanical polishing pad cannot well convey polishing liquid, the mechanical polishing pad cannot be well supported, and the mechanical polishing effect is poor. The polishing liquid conveying performance of the mechanical polishing pad can be improved, the mechanical polishing pad is prevented from deforming during polishing, it can be guaranteed that polishing pressure is evenly transmitted, the size stability and the compression permanent deformation resistance of the mechanical polishing pad can be improved, and the mechanical polishing effect can be effectively improved.

The embodiment of the utility model provides a polishing head and polishing equipment. The polishing head comprises a base, a polishing head and a driving device, the retaining ring is arranged below the base; the polishing head gas film is arranged on the base, is arranged on the inner side of the retaining ring and is used for fixedly holding the wafer; the retaining ring gas film is arranged on the inner side of the retaining ring and is arranged between the retaining ring and the polishing head gas film, the retaining ring gas film is in contact with the edge of the wafer when the retaining ring gas film is pressurized and expanded so as to apply acting force to the edge of the wafer, and the acting force forms radial clamping force and axial downward pressure on the edge of the wafer. Radial clamping force and axial downward pressure are applied to the edge of the wafer through the retaining ring gas film, the wafer can be clamped through the radial clamping force, the wafer is prevented from moving in the polishing process, and the risk of wafer sliding is reduced; the axial downward pressure can apply pressing force to the edge of the wafer in the wafer polishing process, the polishing effect of the edge of the wafer can be controlled more accurately, and the polishing consistency of the surface of the whole wafer is guaranteed.

A method comprises planarizing a substrate material with a functionalized chemical planarization pad. The functionalized chemical planarization pad includes a plurality of functional groups bonded to a material of the pad. The functional groups are configured to chemically react with the substrate material such that a portion of substrate material bonds to the functional groups. The pad is regenerated by applying a regeneration solution configured to break bonds between the functional groups and substrate material bonded to the functional groups to form removed material. The removed material is complexed in a dissolved complexing agent to form dissolved material in an effluent phase.

The utility model discloses a polishing head structure and polishing head drive device, wherein the polishing head structure includes bearing piece, flexible film and N pressure adjustment subassembly, N > = 2, the bearing piece includes side plate and transverse plate, side plate encloses to form the hollow cavity, transverse plate cover is provided the hollow cavity one side, flexible film and side plate inner side wall fixed connection, and the pressure adjustment subassembly is provided with the pressure adjustment subassembly. The flexible film is provided with a first surface and a second surface which are oppositely arranged, and the first surface is suitable for being attached to a to-be-polished part; any pressure adjusting assembly comprises at least one piezoelectric actuator and at least one pressure detection piece, the piezoelectric actuators are distributed on the second surface, the pressure detection pieces are located between the piezoelectric actuators and the flexible film, and the pressure detection pieces are used for obtaining pressure information generated by the corresponding piezoelectric actuators on the flexible film. Through cooperative use of the piezoelectric actuator and the pressure detection piece, the accuracy of the value of the pressure applied to the flexible film is improved, so that the planarization effect of the wafer is improved.

A polishing pad and a chemical mechanical polishing apparatus are provided. The polishing pad includes: a central portion, designed with a central recess; and a peripheral portion surrounding the central portion, and designed with at least one peripheral recess. The at least one peripheral recess is disposed along an annulus contour. A lower part of the peripheral recess is greater than an upper part of the peripheral recess in terms of diameter area, and is different from the upper part in shape.

The invention relates to the technical field of three-step fine polishing methods for 19nm wafer regeneration, discloses a fine polishing method named'three-step fine polishing method for 19nm wafer regeneration ', and aims to solve the technical contradiction between macroscopic planarization and microscopic surface integrity of regenerated wafers in advanced process nodes. The method is characterized by comprising a first fine polishing step, a second fine polishing step and a third fine polishing step, and in each step, gradient decreasing polishing pad hardness, abrasive particle size and concentration, polishing pressure and pH value are adopted; and an on-line process monitoring and self-adaptive feedback control subsystem is used for assistance. By adopting the technical scheme, defects can be efficiently removed, damage can be repaired step by step, the wafer surface with ultralow defect density and excellent chemical stability is obtained, the requirements of the manufacturing process of 19nm and more advanced semiconductors are met, and the yield is increased.

The invention relates to a chemical mechanical grinding system and method for a hard and brittle semiconductor wafer, and the chemical mechanical grinding method comprises the following steps: preparing an oil-based thermal activity-optical activity composite grinding fluid by adopting an organic thermal decomposition type oxidizing agent, an organic optical decomposition oxidizing agent, polyethylene glycol, glycerol and vegetable oil; building an ultraviolet light-diamond abrasive grinding wheel chemical mechanical grinding platform which has an ultraviolet light irradiation function and is adjustable and controllable in irradiation intensity and ultraviolet light wavelength; the chemical mechanical grinding platform and the minimal quantity lubrication liquid supply device are started, and the wafer to be machined and the diamond abrasive grinding wheel are controlled to rotate relative to each other for opposite grinding; turning on an ultraviolet light generator to accurately irradiate the thermal activity-optical activity composite grinding liquid drops on the surface of the wafer, inducing a thermal decomposition type oxidizing agent and an optical decomposition type oxidizing agent to generate active free radicals by utilizing grinding heat energy and ultraviolet light irradiation energy, and initiating a free radical oxidation reaction of a wafer surface layer material to form an oxidation layer with low interface bonding force; the oxide layer on the surface of the wafer is removed through small-load micro-cutting of the diamond abrasive, and the semiconductor wafer with the subsurface almost free of mechanical damage is efficiently obtained.

An example polishing system, such as an electrochemical mechanical polishing (ECMP) system, includes a polishing pad assembly having a polishing pad. The example polishing system includes a bias source. The example polishing system includes a workpiece carrier operable to bring the semiconductor workpiece into contact with the polishing pad. In some implementations, the polishing pad assembly is operable to provide an electrically conductive path for one or more charge carriers to the bias source.

The invention provides a chemical mechanical polishing film thickness real-time control method, device and equipment, and relates to the technical field of chemical mechanical polishing equipment. According to the invention, the optical sensing module is arranged in the vertical hole of the polishing disk, so that the reflected light intensity of the wafer can be monitored in real time in the CMP process. By adopting the optical sensing module, the corresponding relationship between the film thickness of samples with different thicknesses and the reflected light intensity is obtained. Therefore, the real-time film thickness can be determined in the CMP process according to the corresponding relation and the reflected light intensity monitored in real time, and chemical mechanical polishing film thickness real-time control is carried out on the target wafer. Time waste caused by multiple times of shutdown for film thickness detection in a traditional method is avoided, and the chemical mechanical polishing efficiency is improved.

Provided is an adhesive sheet for fixing a polishing pad for high-precision CMP processing, which is easy to adjust the reattachment position, has excellent air permeability, and also has excellent adhesive physical properties, and is a double-sided adhesive sheet for fixing the polishing pad to a surface plate. 【Solution means】 An adhesive sheet for fixing a polishing pad to a surface plate, comprising an adhesive layer A on one surface of a sheet-shaped base material, and an adhesive layer B on the other surface of the sheet-shaped base material, the surface of the adhesive layer A that is not in contact with the sheet-shaped base material has irregularities, and in the Bekk smoothness test, the smoothness of the said surface calculated | required on the following condition 1 is 1-100 second, the smoothness of the said surface calculated | required on the following condition 2 is 15-1125 second, An adhesive sheet for fixing a polishing pad, characterized by the above. Condition 1: The time until the pressure changes from -50.7 kPa to -48.0 kPa. Condition 2: The time until the pressure changes from -50.7 kPa to -29.3 kPa.

The invention provides a system and method for inhibiting wafer scratching in double-sided polishing and double-sided polishing equipment. The system comprises: a shunt manifold valve group, which shunts a polishing liquid main flow path into at least three independent branches respectively corresponding to the inner, middle and outer areas of a polishing pad; the at least three online heating units are respectively arranged on each branch to independently heat the polishing solution; the temperature monitoring device comprises at least three temperature sensors which are arranged in different areas and is used for monitoring the temperature of the three areas in real time; and the control system independently regulates and controls the power of each heating unit based on temperature feedback, a preset non-uniform radial temperature gradient is established and maintained on the polishing pad, and the gradient is configured that the temperature of the middle area is not lower than that of the inner area, and the temperature of the inner area is higher than that of the outer area. Thermal deformation of the polishing pad is optimized through partitioned independent temperature control, and wafer scratching is effectively restrained.

The invention belongs to the technical field of ball valve machining equipment, and particularly relates to double-station ball valve ball body grinding equipment which comprises a rack, a grinding device, a grinding device and a grinding device. The fixing device is arranged on the machining fixed table and used for fixing a ball to be ground; the grinding device is arranged on the mounting seat and is used for grinding the fixed ball body; the spraying devices are arranged on the two sides of the machining table and used for spraying auxiliary media for grinding on the balls; the number of the fixing devices, the number of the polishing devices and the number of the spraying devices are all two. The double-station ball grinding machine has the beneficial effects that the double-station design is adopted to achieve an alternate operation mode, when grinding is conducted on one station, the other station can synchronously complete ball clamping or other work, the window waiting period of traditional single-station equipment is effectively eliminated, the utilization rate of the equipment is increased, and the machining efficiency is improved.

The invention relates to the technical field of semiconductors, and discloses a preparation method of a heat-conducting polyurethane polishing pad, which comprises the following steps: coupling a silane coupling agent with a hydroxylated inorganic heat-conducting material, and carrying out condensation reaction on silanol groups in the silane coupling agent and hydroxyl groups in the hydroxylated inorganic heat-conducting material to form Si-O-Si covalent bonds; bridging a hydroxylated inorganic heat-conducting material at one end of a silane coupling agent to obtain an intermediate; the intermediate is an inorganic heat-conducting material modified by a silane coupling agent; mixing the polyurethane prepolymer with the intermediate to form a mixed prepolymer, and curing the mixed prepolymer at a first temperature to obtain heat-conducting polyurethane; or curing the polyurethane prepolymer to obtain polyurethane, carrying out melt blending on the polyurethane and the intermediate at a second temperature, and curing at a first temperature to obtain heat-conducting polyurethane, in the heat-conducting polyurethane, polyurethane is bridged at the other end of the silane coupling agent. Compared with the prior art, the heat transfer and heat conduction performance of the polishing pad is effectively improved.

The utility model provides a wafer cleaning brush device and chemical mechanical polishing equipment. The wafer cleaning brush device comprises a cleaning brush body; the brush bars are arranged on the surface of the cleaning brush body at intervals, and the ends, away from the cleaning brush body, of the brush bars are brush heads; the limiting part is arranged on the brush head and partially covers the brush head, and the limiting part is used for limiting particles on the surface of the wafer. According to the cleaning brush, the limiting part is arranged on the brush head of the brush rod, particles on the surface of the wafer are limited through the limiting part, when the cleaning brush body rotates, the limiting part plays a role in pushing the particles limited by the limiting part, and the limiting part can easily strip the particles from the surface of the wafer under the cooperation of the chemical solution. The cleaning effect on the surface of the wafer is improved, and the product yield is prevented from being affected by particle residues.

The invention relates to the field of polyurethane polishing materials, and discloses a polyurethane polishing pad and a preparation method thereof. The polyurethane polishing pad is prepared from the following raw materials in parts by weight: 35-45 parts of diisocyanate, 15-20 parts of polycarbonate polyol, 8-14 parts of polyether polyol, 50-60 parts of a modified abrasive, 4-8 parts of a chain extender, 2-4 parts of a catalyst, 0.5-1.5 parts of a foaming agent and 1-3 parts of an antioxidant, the modified abrasive material is prepared from an abrasive material, a silane coupling agent, dimer acid diglycidyl ester and 4-hydroxybutyl vinyl ether; the grinding material is a combination of at least two of cerium oxide, zirconium oxide and / or aluminum oxide. The polyurethane polishing pad is suitable for fine grinding and polishing of sapphire optics, silicon carbide wafer metal and glass materials, the mirror surface effect can be achieved, good polishing stability and polishing smoothness are achieved, and the problems of scratching and uneven polishing are not prone to occurring after long-term polishing.

According to the polishing pad provided by the embodiment of the invention, in addition to the first grooves in the concentric form, the second grooves in the radial form, which are specially designed, are adopted, so that the flowability of slurry can be improved, and the wafer curve and the polishing rate can be changed.

To provide a top ring or a substrate polishing apparatus capable of making a polishing profile more uniform on the central side of a square substrate and the outer edge side of the substrate.SOLUTION: A top ring for holding a polygonal substrate includes: a base member which is connected to a rotation shaft; a substrate suction member which includes a substrate suction body that has a substrate suction surface for suctioning the substrate and communicates with a decompression module, a shielding member that is configured to cover the side of the substrate suction body opposite to the substrate suction surface, and a frame member that is connected to the shielding member so as to surround at least a portion of the periphery of the base member; and a biasing mechanism which has a first end in contact with the base member and a second end in contact with the frame member, and applies a biasing force in a direction that brings the base member and the frame member close to each other or separates them from each other.SELECTED DRAWING: Figure 3

An object of the present invention is to provide a polishing pad that uses a polyol different from conventionally used polyols such as PTMG as a high molecular weight polyol of an isocyanate-terminated urethane prepolymer that forms a polishing layer, a method for producing the polishing pad, and a method for polishing the surface of an optical material or a semiconductor material using the polishing pad.A polishing pad having a polishing layer comprising a polyurethane resin,wherein the polyurethane resin is a cured product of a curable resin composition comprising an isocyanate-terminated urethane prepolymer and a curing agent, and the isocyanate-terminated urethane prepolymer is a reaction product of a polyol component and a polyisocyanate component, andthe polyol component comprises a polyol having a carbonate group in a molecule.

Systems and methods for polishing semiconductor workpieces are provided. In one example, the polishing system includes a platen operable to rotate about an axis. The polishing system further includes a polishing pad on the platen. The polishing system further includes a workpiece carrier operable to bring a semiconductor workpiece into contact with the polishing pad. The polishing pad includes a first zone and a second zone.

The utility model discloses a polishing pad positioning device. The polishing pad positioning device comprises a positioning rod and a first positioning piece. The positioning rod is provided with a first end and a second end; the first positioning piece is arranged at the first end, and a first positioning surface is formed on the peripheral wall of the first positioning piece; the first positioning piece is made of an elastic material, and the first positioning piece is used for abutting against the inner circumferential wall of a liquid supply hole of the upper polishing disc through the first positioning face so that the positioning rod and the liquid supply hole can be coaxially positioned; the second end of the positioning rod is used for being coaxially positioned with a liquid passing hole of the polishing pad. When the positioning device is applied, the positioning precision of the polishing pad can be improved, the operation is simple, and the positioning efficiency of the polishing pad can be improved.

Grinding systems and methods for semiconductor workpieces are provided. In one example, a grinding system includes a workpiece support operable to support a semiconductor workpiece and rotate the semiconductor workpiece about a first axis. The grinding system further includes a grind wheel operable to rotate about a second axis. The grind wheel has a plurality of grinding teeth arranged in a grinding ring on the grind wheel. A radius of the grinding ring is less than or equal to a radius of the semiconductor workpiece (e.g., such that an effective gap ratio between grinding teeth on the grind wheel are reduced).

The invention relates to the field of chemical mechanical polishing, in particular to a polishing pad material and a preparation method and application thereof. The method is mainly characterized in that an N, N-dimethylformamide solution with a proper concentration is utilized to promote ordered arrangement of polyurethane chains during solidification and forming, and the proper water content of the impregnated cloth can ensure uniform solidification and forming of polyurethane. By controlling the water content of the impregnated cloth and the concentration of the N, N-dimethylformamide solution during solidification forming, the polishing pad material can form a stable and uniform microporous structure, so that the surface defects of a wafer silicon wafer polished by the soft polishing pad material are reduced, and the quality of the wafer silicon wafer is improved. The technical problem that many defects exist on the surface of a silicon wafer after an existing polishing pad material is ground is solved.

The invention relates to the technical field of semiconductors, in particular to a device and a method for automatically adjusting the depth of a groove of a 12-inch wafer polishing pan head, and aims to solve the problem that in the prior art, due to fluctuation of the initial thickness of a to-be-processed wafer, the thickness of the to-be-processed wafer is influenced. The polishing process adaptability is poor; the production efficiency is low; and the consistency of the polishing quality is difficult to control. The device comprises an online thickness measuring module, an adjustable groove polishing head module and a system control unit. The polishing head module is internally provided with a flexible hinge coupling type annular segmented array, a micro-drive actuator, a displacement sensing feedback network and a magnetorheological fluid damping locking system. According to the method, the initial thickness of a wafer is measured in a high-precision mode, the depth of a groove is calculated and adjusted in a feedforward mode, accurate execution and locking are achieved, and collaborative polishing and process dynamic compensation are carried out. According to the invention, accurate, rapid and spatially distinguished automatic adjustment of the groove depth of each wafer can be realized, and the automation level, the processing efficiency and the product quality of the polishing process are remarkably improved.

The invention relates to the technical field of polishing, and particularly discloses a gallium nitride polishing method. The gallium nitride polishing method provided by the invention comprises the following steps: sequentially carrying out first-time polishing treatment and second-time polishing treatment on gallium nitride by using a first polishing solution, a first polishing pad, a second polishing solution and a second polishing pad to obtain polished gallium nitride. According to the method, the GaN surface is polished twice, the grinding material of the polishing solution and the type hardness trend of the polishing pad during the first polishing and the second polishing are limited, on the premise that the polishing rate is increased and the roughness of the GaN surface is reduced, the problem that micro cracks and internal cracks appear on the GaN surface after the GaN surface is treated through an existing polishing process is solved, and the quality of the GaN surface is improved. And the surface quality and the product percent of pass of GaN are greatly improved.

The invention belongs to the technical field of wafer polishing, and discloses a silicon carbide wafer electrochemical mechanical polishing device and a silicon carbide wafer electrochemical mechanical polishing process. The polishing head is provided with an electric brush, a metal ring, a copper spring and a copper column and is connected with a power supply anode through a wire; through holes are punched in the surface of the polishing pad, and the silicon carbide wafer adheres to the surface of the copper cylinder through conductive glue. In the rough polishing stage, hard abrasive particles are used for polishing under high potential, and surface scratches and deep damage are rapidly removed; and in the fine polishing stage, soft abrasive particles are used, potential is gradually reduced for polishing, shallow layer damage is removed, and the smooth and defect-free silicon carbide wafer is obtained. According to the electrochemical mechanical polishing device and process for the silicon carbide wafer, the silicon carbide slice can be rapidly machined into a smooth and defect-free surface within a short time, the polishing process of the silicon carbide is simplified, meanwhile, edge breakage and serious scratches generated by grinding are avoided, and the machining time and cost needed in the manufacturing process of the silicon carbide wafer are reduced.

The invention relates to a polishing performance evaluation method and device and a polishing system for improving the polishing performance. The polishing performance evaluation method comprises the steps that the track lengths of all abrasive particles of a polishing disc are obtained; based on the track lengths of all the abrasive particles, calculating to obtain a track average value and a variance; and based on the trajectory average value and the variance, trajectory distribution uniformity is obtained through calculation. The wafer polishing device has the advantages that the rotating motion of the polishing disc unit and the linear motion of the polishing pad unit are combined, so that the wafer polishing uniformity can be improved, the polishing time is shortened, and the polishing efficiency is improved; the rotating motion of the polishing disc unit and the linear motion of the polishing pad unit are combined, so that uneven abrasion of the polishing pad unit can be avoided, the service life of the polishing pad unit is prolonged, and the cost is reduced.

The invention relates to a photoetching ordered microcosmic fixed abrasive polishing pad and a preparation method thereof. Compared with the prior art, the method has the advantages that the to-be-photoetched surface of the substrate is photoetched according to the photoetched pattern, so that the plurality of microscopic grinding columns are orderly distributed and formed on the grinding material base according to the preset distribution and arrangement mode, the distribution shape, direction and position of the microscopic grinding columns on the grinding material base are kept unchanged, and regular distribution and uniform distribution can be presented; the distribution and the size of the micro grinding columns can be adjusted according to the photoetching pattern to meet different polishing requirements, then the micro grinding columns of the substrate are compositely filled with the filling body to keep the stability of the micro grinding columns, and the polishing pad can be suitable for the micro level to meet the requirement of the manufacturing procedure below 5nm, so that the production efficiency is improved, and the production cost is reduced. The microcosmic grinding columns are formed through photoetching to replace traditional grinding particles, the chemical stability of the polishing pad during polishing is improved, the removal rate is increased, the surface roughness is reduced, and the polishing effect of the polishing pad on a polishing product is improved.

The utility model discloses a linkage type double-sided grinding machine, which belongs to the technical field of grinding machines and comprises a base, a lower grinding disc horizontally fixed at the top of the base, an upper grinding disc positioned at the top of the lower grinding disc, parallel to the lower grinding disc and coaxially arranged with the lower grinding disc, and a sun gear rotationally mounted in the middle of the lower grinding disc. The sliding holes are evenly formed in the outer side of the lower grinding disc in the circumferential direction, the outer tooth columns vertically slide in the sliding holes, the positions of the bottom ends of the outer tooth columns are limited through a tray and an arc-shaped plate, and in addition, through a lifting assembly composed of a limiting plate, a spring and a sliding rod at the bottom of the taking and placing table, the taking and placing efficiency is improved. An outer tooth column at the top of an arc-shaped plate can be controlled to ascend and descend in the using process, so that horizontal installation can be conducted in the feeding and discharging process and the planet wheel replacing process, using is more convenient, in addition, the arc-shaped plate can rotate around a lower grinding disc along with a lantern ring, the position of a taking and placing table can be adjusted at will, and practicability is higher.

A chemical mechanical polishing apparatus includes a platen, a carrier, a dispenser, and a temperature control system. The platen holds a polishing pad. The carrier holds a substrate against a polishing surface of the polishing pad during a polishing process. The dispenser supplies a polishing liquid to the polishing surface. The temperature control system includes a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned on the polishing pad.

The invention discloses adjustable machining grinding equipment, and relates to the technical field of machining. According to the equipment, a multi-dimensional adjusting mechanism is innovatively integrated, a sliding block is driven through a rotatable double-thread lead screw, stepless adjustment of the grinding radius is achieved, and the equipment is suitable for machining of the inner diameters of workpieces of different sizes; and in combination with a dynamic balance weight system, vibration in high-speed grinding is effectively inhibited, and the stability is improved. Meanwhile, a pneumatic-servo cooperative control system is adopted, stepless switching of the grinding pressure in the four stages of light pressure, medium pressure, heavy pressure and fine grinding is supported, the revolution-rotation speed ratio of the grinding disc to the workpiece is synchronously regulated and controlled, and the uniformity of the grinding track is optimized. In addition, the equipment is provided with a PLC program control module and a touch screen interface, 30 sets of technological parameters can be preset and stored, one-key calling is achieved, and the machining efficiency and consistency of complex parts are remarkably improved. According to the design, the adaptability of the equipment to sapphire substrates, gears and hard alloy special-shaped high-hardness workpieces is greatly expanded.