191results about "Lapping tools" patented technology

An integrated cleaning and liquid supply device and online cleaning method for polyurethane polishing pads are disclosed. The device includes a base, a rotating seat, a swing arm, an independent liquid supply pipeline system and cleaning pipeline, a high-pressure nozzle array, and a positioning sensor assembly. During the polishing stage, polishing liquid is dripped through the liquid supply outlet. During the cleaning stage, the swing arm moves centripetally to a preset position aligned with the center of the polishing pad. The positioning sensor triggers a high-pressure pump, causing pure water to be sprayed as an atomized jet along the diameter of the pad surface through the high-pressure nozzle array. Simultaneously, the polishing pad rotates at a low speed, utilizing the synergistic effect of centrifugal force and high-pressure water flow to thoroughly remove residual contaminants within the micropores of the polyurethane. This invention integrates liquid supply and deep cleaning functions into the same motion mechanism, eliminating the need for machine shutdown or manual intervention. It offers advantages such as non-contact, non-destructive, thorough cleaning, and high automation, extending the life of the polishing pad and improving the stability of the CMP process.

This invention discloses a grinding tool for a high-rigidity precision mold guide post, relating to the field of guide post grinding technology. It includes a grinding assembly for grinding the guide post and checking its dimensional accuracy. The grinding assembly comprises a grinding component, a support switching component, and an inspection component. The grinding component grinds the guide post, the support switching component clamps and switches the positions of the two guide posts, and the inspection component checks the grinding status of the guide post. The grinding component includes a fixed stage and a moving stage. The support switching component is mounted on the moving stage, and the inspection component is mounted on the fixed stage. Through the operation of the grinding assembly, two guide posts can operate in parallel with station switching, allowing grinding and inspection of the guide posts to be performed simultaneously. A single guide post can quickly switch between grinding and inspection positions, ensuring that one guide post is always being ground while another is being inspected. This utilizes the idle time of existing grinding processes, improving the production efficiency of guide post grinding.

A wafer processing apparatus according to an embodiment of the present application can include a turntable rotating about a rotation axis to position a grinding area for grinding a wafer and a polishing area for polishing the wafer, a plurality of chuck tables disposed on the turntable for the wafer to be placed thereon, a grinding device for grinding the wafer positioned at the grinding area, a polishing device for polishing the wafer ground by the grinding device, a frame dividing the grinding area and the polishing area on the turntable, and a moisture removing portion disposed on the frame for removing moisture of the wafer moved from the grinding area to the polishing area by rotation of the turntable.

According to one embodiment, a polishing pad includes a polishing layer comprising a urethane-based prepolymer and a curing agent, wherein the spin-lattice relaxation time (T1) and spin-spin relaxation time (T2) measured using TD-NMR for the polishing layer satisfy Equations 1 and 2, respectively, and thus can improve the performance of the polishing pad.

Wafer grinding device (100, C1), wherein: - the wafer grinding device (100, C1) is set up to perform a grinding operation for grinding a semiconductor wafer (W1) with a grinding stone (4, 4N, 4S), - the wafer grinding device (100, C1) is set up such that during the grinding operation, when: - a grinding amount is expressed as kW, - a wear amount of the grinding wheel (4, 4N, 4S) is expressed as Kt, - the grinding amount (kW) is an amount for grinding the semiconductor wafer (W1) with the grinding stone (4, 4N, 4S) and - the wear amount (Kt) is generated by performing the grinding operation, The grinding stone (4, 4N, 4S) exhibits a wear rate as a characteristic that can be described by a formula Kt / Kw is expressed - the wear rate is 5% or more and less than 200%, - the wafer grinding device (100, C1) has a determining part (9) which performs a determining process to determine whether a grinding condition with respect to the semiconductor wafer (W1) is anomalous or normal, based on a load current of a motor (Mt1) to rotate the grinding stone (4, 4N, 4S) during the grinding operation, and - the wafer grinding device (100, C1) is set up, in a period in which the grinding operation is being carried out, if a change in the load current in a time unit for determining the anomaly is equal to or greater than a threshold value for determining the anomaly, the determining part (9) is to determine that the grinding condition is anomalous.

The embodiment relates to a polishing pad that comprises a polishing layer. When pyrolysis oil obtained from the polishing pad is analyzed according to the KS M 2457 standard, the content of chlorine components is 13,000 mg / kg or more. The pyrolysis oil can be used as a high-quality heat source through a refining process. Accordingly, the embodiment can contribute to improving environmental problems while increasing the recycling rate of polishing pads.

To provide a polishing pad that can improve a fault of profiling an edge part such as sagging and rebounding of an end part, without changing a physical property / bubble structure of a polishing layer.SOLUTION: A polishing pad 3 comprises a polishing layer 4 having a polishing surface for polishing an object to be polished and a cushion layer 6 arranged at the opposite side of the polishing surface of the polishing layer 4. The polishing layer has Shore D-hardness of 40 degrees-70 degrees and has hollow microscopic spheres 4A dispersed thereon. The cushion layer 6 has compressive elasticity modulus of 90% or more.SELECTED DRAWING: Figure 3

silicon wafer (10) wherein the 50% threshold of a nanotopography within a 2 mm square spot having a size with a length in at least one direction of 2 mm and an area of ​​4 mm 2 exhibits 1.0 nm or less, and wherein the 50% nanotopography threshold is less than or equal to 0.4 times the 99.5% nanotopography threshold.

This invention discloses a swashplate-based lapping device for lapping a swashplate and a swashplate base. The bottom surface of the swashplate has a first arc-shaped curved surface, and the top surface of the swashplate base has a second arc-shaped curved surface that mates with the first arc-shaped curved surface. The device includes: a drive component for driving the swashplate to reciprocate on the swashplate base; a support assembly for supporting the drive component; and a base assembly for fixing the swashplate base. This invention ensures close contact between the swashplate and the swashplate base, resulting in more uniform pressure contact on the arc surface. It solves the problem of uneven force distribution and difficulty in ensuring contour accuracy caused by manual operation, greatly improving machining accuracy and efficiency. Furthermore, this structure converts rotary motion into reciprocating linear motion, making operation more convenient.

The utility model discloses a kind of grinding devices of electrostatic contact, belong to grinding processing equipment technical field, the grinding device includes the clamping assembly for clamping electrostatic contact, first station is equipped on clamping assembly, hot shrink tube is placed on first station, hot shrink tube is inserted for the clamping part of electrostatic contact, air gun assembly is equipped on clamping assembly, air gun assembly can spray high-temperature hot gas, when clamping assembly moves to the clamping part of electrostatic contact, air gun assembly is spirally rotated with hot shrink tube as center, so that hot shrink tube is heat-shrunk and tightened and the clamping part of electrostatic contact is connected, to when clamping assembly clamps the clamping part of electrostatic contact, clamping assembly is clamped on heat-shrunk and tightened hot shrink tube.The utility model makes grinding fluid permeability zero by heat shrink tube sealing, radically cure intergranular corrosion, simultaneously, realize micro-newton level flexible clamping by heat shrink tube buffer, avoid clamping damage, and pass through the heating mode of spiral heating and end portion reinforcement to guarantee sealing property.

This invention discloses a valve core ball grinding processing device for ball valves, specifically relating to the field of grinding technology. It includes a support platform, a housing disposed on the upper part of the support platform, a material handling structure on the top wall of the inner cavity of the housing, and a valve core grinding structure on the bottom wall of the inner cavity. This invention utilizes the driving action of a material handling drive to grip a material handling follower and feed it into a grinding component. A rack drives the grinding component to rotate repeatedly, during which the valve core ball is fixed by a valve core limiting component, thereby achieving the grinding of the valve core ball. After grinding, the material handling drive and follower remove the valve core ball from the grinding component and feed it into a discharge hopper on the rear side. Simultaneously, a new valve core ball is fed from the material handling tray into the grinding component, achieving continuous processing, reducing contact between operators and the valve core ball, grinding fluid, and grinding equipment, and reducing the occurrence of safety accidents.

This invention belongs to the field of polyurethane materials technology, and relates to an organic piezoelectric polyurethane polishing pad and its preparation method. Preparation method: In the preparation of the polyurethane polishing pad, before the reaction of polyether polyol and isocyanate, PVDF fibers are added to the polyether polyol in batches, and stirred until the PVDF fibers are uniformly dispersed in the polyether polyol. The resulting polyurethane polishing pad is the organic piezoelectric polyurethane polishing pad. The prepared organic piezoelectric polyurethane polishing pad includes a polyurethane matrix and PVDF fibers. The polyurethane matrix has a porous structure, and the PVDF fibers are distributed in the polyurethane matrix in a network structure. The method of this invention is simple, and the obtained organic piezoelectric polyurethane polishing pad has good polishing effect and polishing efficiency.

The utility model discloses a non - filled end face grinding wheel of anti - unthreaded block, including base body and grinding wheel piece, the base body surface is equipped with the groove, the groove is equipped with the first adhesive layer in addition to the base body surface, the grinding wheel piece is located the first adhesive layer surface, be equipped with the second adhesive layer between the grinding wheel piece and the first adhesive layer. The utility model discloses a non - filled end face grinding wheel of anti - unthreaded block simple structure, practicality is strong, through the improvement base body surface structure and the setting adhesive layer, the adhesion between the grinding wheel piece and the base body has been improved significantly, and can realize the discharge of waste grinding fluid, avoids the scratch workpiece surface.

A connection assembly for connecting a tool head and a further machine module of a hand-guided machine tool wherein the connection assembly includes at least two connection parts following one another along a longitudinal axis and each having a connection section via which the connection parts are connectable to one another.

The present application belongs to the field of precision grinding, and discloses a wafer grinding method, which can obtain extremely high wafer surface quality and maintain extremely high wafer grinding efficiency without changing the grinding platform. The wafer is placed on a rotating predetermined grinding surface, a grinding liquid film is injected between the predetermined grinding surface and the wafer, the wafer and the predetermined grinding surface are separated by the grinding liquid film, and the two are made to rotate relatively. A concave mirror surface recessed towards the predetermined grinding surface is arranged directly below the predetermined grinding surface, and an upwardly emitting laser beam is arranged directly below the concave mirror surface, the laser beam is diffused through the concave mirror surface to form an auxiliary heating light spot covering the grinding liquid film, so that the auxiliary heating light spot heats the grinding liquid film, and the predetermined grinding surface grinds the wafer. The present application also discloses a wafer grinding device for implementing the above grinding method, and the device has a simple structure.

The utility model discloses a kind of pneumatic grinding appliances of external hanging installation on CNC lathe tool turret seat, it is related to numerical control lathe field, including base, the base is installed on the rodless cylinder of tool turret seat, ladder hole is provided in the base, the end of the base is provided with air inlet hole, pneumatic connector is installed in the air inlet hole, the ladder hole is communicated with air inlet hole, clamp main body, bearing and limit ring are provided in the ladder hole, the clamp main body is used to clamp grinding tool bit, the end of the clamp main body is provided with driving blade, the clamp main body is rotatably installed in ladder hole by bearing, the limit ring is rotatably sleeved on clamp main body, and is installed in ladder hole together with clamp main body. The utility model is grinded by grinding tool bit by pneumatic mode, without taking down workpiece, improve the precision and processing efficiency of workpiece processing.

A device for cleaning substrates. The device comprises a polymeric pad, a frame body, and a coupling member. The polymeric pad has a top surface and a bottom surface. At least a portion of the frame body extends between the top surface and the bottom surface of the polymeric paid. A coupling member extends upwards from at least a portion of the frame body.

The application provides a device for detecting uniformity of a flexible film of a polishing head, a CMP equipment and a detection method, comprising: a light beam emitter arranged in the CMP equipment and capable of displacement adjustment in the vertical direction; a light beam detection member arranged in the CMP equipment and used for detecting the light beam emitted by the light beam emitter; during detection, the polishing head performs rotational movement, the light beam emitter emits horizontal light beams to ring sub-zones of the flexible film after pressure is applied, and the uniformity of the flexible film is judged according to the light beam detection condition of the light beam detection member, wherein the flexible film is divided into a plurality of ring sub-zones in the radial direction of the flexible film and in the shape of a ring. In the present application, if the light beam detection member detects intermittent light beams during one rotation of the polishing head, it is judged that the uniformity of the flexible film is abnormal. By arranging the light beam emitter and the light beam detection member in the CMP equipment, the flexible film can be detected in time during the process, and the flexible film with problems can be found in time and measures can be taken.

The utility model discloses a grinding machine handrail adjusting device which comprises a support base, a power device and a linkage support. The support base comprises a first connecting plate and a second connecting plate. One end of the power device is rotationally connected with a first shaft hole formed in the second connecting plate through a first connecting shaft; one end of the linkage support is rotationally connected with a first pin hole formed in the second connecting plate, and the other end of the linkage support is rotationally connected with the positioning base. The position of the handrail of the grinding machine can be adjusted, specifically, through stretching out and drawing back of the power device, the two ends of the power device can also rotate, the linkage support can be driven to rotate, the linkage support drives the support base to move when rotating, and if the handrail is fixed to the support base, movement of the handrail can be controlled; therefore, the operation of operators with different heights is adapted, and the operation comfort of the operators is kept.

A polishing apparatus for a substrate, includes: a polishing pad having at least one region formed of a light-transmitting material; a platen on which the polishing pad is disposed on an upper surface thereof, having a groove portion in a region overlapping the polishing pad, and rotatably installed in one direction; a light source unit accommodated in the groove portion of the platen, and emitting light of a predetermined wavelength band to the one region of the polishing pad; a slurry supply unit supplying a slurry containing photocatalyst particles excited by the light of the predetermined wavelength band to the polishing pad; and a polishing head installed on the polishing pad to be spaced apart from the slurry supply unit in the one direction, and rotating a semiconductor substrate in close contact with the polishing pad.

A substrate polishing apparatus includes a polishing pad, a first light source that radiates first light to the polishing pad, a second light source that radiates second light to the polishing pad, and a lubricant supply device that supplies a lubricant to the polishing pad. The polishing pad includes a binder and photocatalytic particles in the binder.

Disclosed are a window-mounted polishing pad in which since a thermal fusion method and a vibration fusion method are not applied while the window is inserted into and attached to the polishing pad, the polishing pad is not deformed and polishing slurry does not leak through a gap between the window and the polishing pad, and a method of manufacturing the same. The window-mounted polishing pad includes: a polishing layer in which a first punched hole is formed in a thickness direction; a window that is inserted into and fixed to the first punched hole of the polishing layer; a lower support layer that is positioned below the polishing layer and the window and has a second punched hole for irradiating an optical beam formed at a lower end side of the window and having a narrower width than the first punched hole or the window; an adhesive layer that mediates bonding of the polishing layer and the lower support layer, has the same area as the lower support layer, and partially overlaps but does not contact an edge portion of the window; and a sealing adhesive member positioned between the window and the adhesive layer.

This invention relates to the field of polishing technology, and in particular to a composite abrasive polishing pad containing a shear-thickening fluid, its preparation method, and its application. The composite abrasive polishing pad containing a shear-thickening fluid is composed of a polyurethane soft microporous framework, a shear-thickening fluid, and composite abrasives; wherein the density of the polyurethane soft microporous framework is 0.12 ± 0.02 g / cm³. 3 The thickness is 2.50±0.05mm, and the average pore size is 192.6±20μm. The composite abrasive is composed of silica aqueous solution and single-crystal diamond. In this invention, diamond and silica particles of different sizes are combined as the dispersed phase to prepare a shear-thickening fluid, which is then molded in a soft polyurethane microporous framework. The prepared composite polishing pad has the characteristics of both bonded and semi-bonded abrasive polishing pads, mainly relying on the rheological properties of the shear-thickening fluid, as the dispersion system exhibits good fluidity under equilibrium conditions.

The present invention provides a double-sided adhesive tape for adhering a polishing pad, the double-sided adhesive tape including an upper release film layer, a first adhesive layer, an adhesive tape substrate laminated on a lower surface of the first adhesive layer, a second adhesive layer laminated on a lower surface of the adhesive tape substrate, and an air bubble discharge pattern shaped sheet layer laminated on the lower surface of the second adhesive layer, the air bubble discharge pattern being formed on the laminated surface with protruding lines, and a chemical mechanical polishing device to which the adhesive tape is applied.

A method for processing a substrate includes polishing the front surface of the substrate on a first pad connected to a first platen. The method further includes transferring the substrate from the first pad to a second pad connected to a second platen using a carrier head. The method further includes moving the carrier head to a scanning position to position the edge of the substrate on an orientation sensor located at the rotation center of the second pad. The method further includes scanning the edge of the substrate using the orientation sensor to generate a signal. The method further includes analyzing the signal to locate a reference mark on the substrate and to determine the rotational orientation of the substrate relative to the carrier head.

A chemical mechanical polishing (CMP) polishing pad is provided. The CMP polishing pad includes a pad body characterized by a top surface and a bottom surface and comprising a plurality of voxels. The plurality of voxels comprises: a first portion of the plurality of voxels occupied by a first material; and a second portion of the plurality of voxels occupied by a second material.

This invention relates to the field of chemical mechanical polishing (CMP) technology and discloses an edge-protecting CMP polishing device for silicon wafer processing, comprising a polishing module, wherein the polishing module includes a base, and a polishing disc is rotatably connected inside the base. This edge-protecting CMP polishing device for silicon wafer processing effectively solves the problem in existing CMP equipment where the limiting ring adopts an integrated fixed design. The inner diameter of the limiting ring is usually slightly larger than the diameter of the silicon wafer. However, due to the brittle nature and poor impact resistance of the silicon wafer itself, the edge of the silicon wafer is easily squeezed and rubbed against the inner wall of the limiting ring during loading, which easily leads to silicon wafer breakage and edge chipping. If the inner diameter of the limiting ring is designed to be too large than the diameter of the silicon wafer to avoid breakage during loading, although the risk of collision during loading can be reduced, the silicon wafer will shift and wobble within the limiting ring during polishing, affecting the surface smoothness and processing accuracy of the silicon wafer.