Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same

Abstract

A fixed abrasive polishing pad includes a base and a plurality of polishing layers on the base, wherein each polishing layer includes abrasive particles and apertures in a polishing surface of the polishing layer.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to an apparatus for manufacturing a semiconductor device. More particularly, the present invention relates to a fixed abrasive polishing pad, a method of preparing the same, and chemical mechanical polishing (CMP) apparatus including the same. [0003] 2. Description of the Related Art [0004] CMP is a process for planarizing a surface of a substrate, e.g., a semiconductor wafer, which may include a variety of structures, films, etc. formed thereon. CMP effects planarization by combining a mechanical polishing effect with a chemical reaction effect. The mechanical polishing typically involves the application of an abrasive to the wafer surface. The chemical reaction typically involves the application of a reactant solution, e.g., an acidic or basic solution, to the wafer. CMP is a planarization process frequently employed for removing protrusions from a wafer surface, and is very important...

AI Technical Summary

Benefits of technology

[0013] It is therefore another feature of an embodiment of the present invention to provide a polishing pad having polishing layers with apertures formed therein, which may enhance the ability of a slurry to infiltrate a contact area between the polishing layers and a target substrate.

Problems solved by technology

As a result, the oxide film overlying the nitride film at the center of the wafer is not effectively removed.

However, it may be difficult to increase the contact pressure between the polishing pad and the wafer only at the center of the wafer because of the characteristics of the polishing pad, and thus the oxide film etch rate may increase across the wafer.

Besides being difficult to apply more pressure to only the center of the wafer in an actual practice, there is a risk that the wafer will be scratched.

In fact, the increased pressure may prevent the surface of the layer being polishing from being chemically polished, because the increased pressure may impede the delivery of slurry, which contains the reactant solution, to the contact area between the wafer and the polishing layers PL.

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