39 results about "Telluride" patented technology

This invention discloses a cadmium telluride thin-film solar cell with a cadmium oxide passivation layer and its preparation method, including the following steps: (1) Pretreatment: The cadmium telluride thin film covered by the cadmium oxide layer formed by CdCl2 annealing is placed in a vacuum tube furnace, and the vacuum is drawn to a negative pressure state to remove residual O2; (2) Reduction treatment: The vacuum pump is turned off, an inert gas is introduced, the temperature is raised to the reduction reaction temperature and kept at the temperature, and then a mixture of reducing gas and inert gas is introduced under positive pressure to carry out the reduction reaction; the reduction reaction temperature is 200~400℃; the ratio of reducing gas to inert gas mixture is 1-20%; the reaction time is 5-30min; (3) Posttreatment: The heating is turned off, an inert gas is introduced to cool to room temperature to form a cadmium oxide layer covered by a metal Cd layer.

The application discloses a silver-free high-temperature lubricating coating and a preparation method and application thereof, and comprises the following steps: S1: stirring and mixing an aluminum source, a magnesium source, a chromium source and a phosphoric acid aqueous solution to obtain a mixed solution; S2: mixing the mixed solution with a tellurium source, a molybdenum source and a cobalt source, and obtaining a silver-free high-temperature lubricating coating after ball milling; and coating the silver-free high-temperature lubricating coating on a base material, and obtaining a silver-free high-temperature lubricating coating after solidification. The application provides the high-temperature lubricating coating which is applied to high-temperature alloy fasteners and adopts a telluride to replace silver as a high-temperature lubricating material, and the high-temperature lubricating coating has better high-temperature resistance and stronger stability compared with other coatings; the telluride can maintain the original structure and performance under 600-800 DEG C.

This invention provides a near-space sublimation method for preparing cadmium telluride thin films containing a cadmium zinc telluride (CdZnTe) buffer layer. This method addresses the quality issues of existing cadmium telluride epitaxial films by using CdZnTe polycrystalline material as the growth source for the buffer layer, followed by the growth of the cadmium telluride epitaxial film on the buffer layer. First, the near-space sublimation furnace growth process parameters are set, and the pretreated CdZnTe polycrystalline growth source and GaAs substrate are placed into the near-space sublimation furnace to grow a 5-15 μm CdZnTe buffer layer on the GaAs substrate. Second, the CdZnTe polycrystalline growth source and the GaAs substrate with the grown buffer layer are removed from the near-space sublimation furnace cavity, and the growth process is repeated using a cadmium telluride growth source to prepare a cadmium telluride epitaxial film with a thickness of 300-400 μm.

The application discloses a kind of dimming cadmium telluride power generation glass and preparation method thereof, belong to adjustable light photovoltaic module production technical field.The preparation method includes: on FTO conductive substrate, CdSe / CdTe power generation layer and ZnTe doped composite back contact / complex back electrode layer are prepared in sequence, single time perforating is carried out using laser, the discrete micropore array with aperture 1 μm~5 μm, hole spacing 5 μm~15 μm, optical opening rate 10%~60% is formed, then solid-state electrolyte layer, electrochromic layer and transparent top electrode are deposited, and the product is obtained by laser scribing electrode isolation and glass packaging.Product is divided into high efficiency HP, balanced type ST and high light HT three series according to opening rate.The application realizes the effect of light path self-alignment, process simplification and no moire interference, and the power generation efficiency loss is small, the light transmittance and power generation efficiency matching can be flexibly customized, suitable for building photovoltaic integrated scene, with high efficiency power generation, dynamic dimming and excellent visual effect.

The application provides a dual-gate regulated two-dimensional heterostructure telluride infrared detector, which is characterized in that: a silicon photonic crystal cavity and a first air groove are arranged on an SOI substrate, and are separated into a first mesa and a second mesa arranged along a width direction; a dielectric layer is arranged above the silicon photonic crystal cavity, a first two-dimensional bipolar material layer is arranged above the dielectric layer of the first mesa, and a second two-dimensional bipolar material layer is arranged above the dielectric layer of the second mesa; the first two-dimensional bipolar material layer and the second two-dimensional bipolar material layer are stacked above the first air groove to form a Van der Waals heterojunction region; a drain electrode is prepared on the first two-dimensional bipolar material layer, and a source electrode is prepared on the second two-dimensional bipolar material layer; a first gate electrode is further prepared on the first mesa, and a second gate electrode is further prepared on the second mesa; the Van der Waals heterojunction region can be reversibly switched between a PN junction and an NP junction by respectively adjusting gate voltages of the first gate electrode and the second gate electrode.

This invention provides a cadmium telluride thin-film solar cell, a manufacturing method, and a coating apparatus. The coating apparatus includes a coating chamber, a feeding assembly, and a storage assembly, a heating assembly, and a transport assembly located within the coating chamber. The storage assembly stores a material source and includes at least one crucible with an opening on its bottom surface. At least a portion of the feeding assembly is located within the coating chamber, with its portion extending into the crucible to replenish the material source. The heating assembly heats the crucible to sublimate and decompose the material source into material source vapor. The transport assembly is located below the storage assembly and supports the substrate, moving it so that the material source vapor is deposited onto the substrate from top to bottom through the opening to form a thin film. This coating apparatus enables top-down diffusion deposition of material source vapor, effectively increasing the power generation area and production efficiency of the cadmium telluride thin-film solar cell. It also enables continuous online feeding, further improving production capacity.

This invention belongs to the field of solar cell technology and discloses a tandem solar cell of zinc-cadmium telluride (CdTe) and perovskite. It employs a CdTe solar cell as the top cell and a narrow-bandgap perovskite solar cell as the bottom cell, improving device stability while maintaining high efficiency. By stacking two solar cells with different optical bandgapes, they exhibit different spectral responses to light absorption, fully utilizing light energy and improving photoelectric conversion efficiency. Using stable wide-bandgap CdTe as the absorber layer material of the top cell replaces the unstable wide-bandgap perovskite material, thereby improving the overall stability of the solar cell, achieving higher efficiency, and extending cell lifespan.

The present application discloses implementations relating to a tandem solar cell, a manufacturing method of a tandem solar cell, and a photovoltaic module. In an implementation, a tandem solar cell includes a bottom solar cell, a cadmium telluride top solar cell, an N-type transparent conductive layer, and a P-type transparent conductive layer. The cadmium telluride top solar cell is connected in series with the bottom solar cell, and a material of a back contact layer included in the cadmium telluride top solar cell includes at least one of copper-doped zinc telluride, copper-doped magnesium telluride, or copper-doped zinc nitride. The N-type transparent conductive layer and the P-type transparent conductive layer are sequentially stacked between the bottom solar cell and the cadmium telluride top solar cell along a direction from the bottom solar cell to the cadmium telluride top solar cell.

This utility model belongs to the field of cadmium telluride BIPV technology, specifically relating to a cadmium telluride insulated photovoltaic glass for back-connected junction boxes. It includes an outer encapsulation glass layer, with a cadmium telluride power generation chip adhered to one side of the outer encapsulation glass layer, and an inner encapsulation glass layer adhered to the side of the cadmium telluride power generation chip away from the outer encapsulation glass layer. A sealing ring and sealant are used to maintain a seal at the circular hole between the sealing ring and the inner and outer encapsulation glass layers, thus sealing the hollow cavity layer. The positive and negative electrodes of the cadmium telluride power generation chip on the side closest to the inner encapsulation glass layer converge at the circular hole via conductive adhesive strips, and then connect to the junction box through the center of the sealing ring. This allows the back-connected cadmium telluride laminated monolithic product to be combined with the insulated glass product, enabling the cadmium telluride laminated monolithic product to be connected to the junction box while retaining the sound insulation, heat insulation, and thermal insulation functions of the insulated glass product.

This invention belongs to the field of semiconductor material surface metallization technology, specifically relating to a method for depositing pure platinum electrodes on the surface of cadmium telluride (CdT) and a semiconductor functional device. The invention first polishes and cleans the CdT crystal, then prepares a patterned mask layer by spin-coating a negative photoresist followed by baking, exposure, and development. A chemical plating solution is prepared using a mixed solvent of methanol and N,N-dimethylformamide. The masked crystal is immersed in the plating solution to perform a chemical plating reaction, depositing a pure platinum coating in a predetermined area of ​​the crystal. Finally, the mask layer is peeled off to obtain a CdT crystal with patterned pure platinum electrodes. This method requires no vacuum environment, is simple to operate, and is low in cost. The resulting pure platinum coating is continuous and dense, exhibiting high bonding strength with the crystal substrate and forming good ohmic contact. It is also compatible with photolithography for fine processing, and has significant application value in semiconductor devices such as solar cells, infrared detectors, radiation detectors, and photon counting sensors.

This invention discloses the construction and application of a multifunctional ratiometric fluorescence sensing platform based on aggregation-induced emission nanozymes, belonging to the field of nanocomposite materials technology. This invention involves the stepwise synthesis of a zirconium-based aggregation-induced emission metal-organic framework (Zr-TCPE) and cadmium telluride quantum dots (CdTe QDs), followed by the preparation of a Zr-TCPE / CdTe ratiometric fluorescent nanozyme using an electrostatic self-assembly method. In this composite material, Zr-TCPE exhibits organophosphorus hydrolase-like activity, specifically catalyzing the hydrolysis of para-oxygen and phosphorus, resulting in specific quenching of its fluorescence at 475 nm. Meanwhile, the fluorescence of CdTe QDs remains stable at 585 nm, enabling self-calibrated detection through the ratio of the two fluorescence signals. This invention features mild synthesis conditions and simple operation. The constructed sensing platform has a detection range spanning four orders of magnitude, a low detection limit, strong anti-interference ability, and excellent long-term stability over 24 days. It can be effectively used for rapid and highly sensitive detection of para-oxygen and phosphorus in complex samples of organophosphorus pesticides.

This invention relates to a method for preparing tritelluride microsheets, comprising the following steps: Step 1, M... 2+ and / or M 3+ A precursor solution is obtained by dissolving the precursor solution in an organic solvent. Tri-n-octylphosphine and Te are then mixed to obtain a mixed solution; M is at least one of Cr, V, and Gd. Step two: The precursor solution and the mixed solution are stirred and reacted to obtain MTe3 seed crystals. Step two: The MTe3 seed crystals are added to the precursor solution and then to the mixed solution for further reaction to obtain tritelluride microsheets. This method allows for balanced and controllable crystal growth, significantly improving the lateral dimensions and crystal integrity of the CrTe3 microsheets. The CrTe3 microsheets prepared using this method exhibit excellent structural integrity, with lateral dimensions ranging from 2 to 200 μm, and demonstrate intrinsic ferromagnetic behavior at high Curie temperatures, providing a new technical approach for the large-scale fabrication of high-performance two-dimensional magnetic materials and spintronic devices.

The application discloses a cadmium telluride photovoltaic and photo-thermal component and a preparation method thereof. A front electrode layer, a light absorption layer and a metal back electrode layer of a cadmium telluride cell are sequentially deposited on a glass substrate, a boron nitride heat-conducting insulation layer is deposited on the metal back electrode layer, the metal back electrode layer is bonded with positive and negative electrode lead terminals, the positive and negative electrode lead terminals lead out electric energy generated during the operation of the component and are guided out of the component to be electrically connected with the outside, capillary pipes are arranged on the heat-conducting insulation layer, a heat-conducting insulation layer is deposited on the outside of the capillary pipes, heat generated during the operation of the component is transmitted to the capillary pipes through the heat-conducting insulation layer, cooling working media flowing in the capillary pipes absorb the heat, the cooling working media are collected to the capillary pipes and are transported to a waste heat utilization client through the capillary pipes. The cadmium telluride cell panel disclosed by the application can not only maintain the power generation capacity and output power of the original cadmium telluride cell panel, but also is durable, does not need to be maintained in the whole life cycle of the component, simplifies the structure of the component, greatly reduces the quality of the component, is good in appearance and is beneficial to popularization and application.

The application discloses a kind of cadmium telluride power generation glass curtain wall frame structure and construction method, belong to curtain wall installation technical field, including by horizontal keel and vertical keel fixed connection formed curtain wall frame, fixed installation in the inside of curtain wall frame aluminium alloy additional frame, for fixing cadmium telluride power generation glass fixed component, cover in additional frame and the horizontal sealing strip and side edge sealing strip of keel junction.The front of horizontal sealing strip is inclined and is provided with flow guide groove, and the side edge sealing strip side is provided with drainage groove communicated with flow guide groove;The horizontal frame of additional frame is provided with boss, and the boss is bolted with pressing block and is provided with elastic gasket;Vertical frame is provided with the installation positioning groove of cadmium telluride power generation glass.The application forms sealing waterproof mechanism by multiple sealing systems cooperation, avoids glass breakage caused by rigid connection by the design of pressing block and rubber pad, improves the waterproof reliability and structural stability of curtain wall.

This invention discloses a cadmium telluride thin-film solar cell based on a p-type copper oxide back contact layer and its fabrication method, belonging to the field of solar cell technology. The cadmium telluride thin-film solar cell comprises, from bottom to top, a transparent conductive oxide thin film layer, a high-resistivity buffer layer, an n-type cell window layer, a p-type cell absorber layer, a back contact layer, and a back electrode layer; the back contact layer is made of CuMO2 material; wherein M is one or more of Al, Ga, In, Sc, and Y. This invention uses a p-type copper oxide thin film as the back contact layer, which can reflect photogenerated electrons at the cadmium telluride back surface to the PN junction, greatly reducing electron recombination at the cadmium telluride back surface, improving hole transport capability, and avoiding complex copper doping post-processing, thereby improving the open-circuit voltage and conversion efficiency of the cell.

The application belongs to the technical field of compound semiconductor material crystal protection, and discloses a back surface protection method for a CdZnTe / CdTe wafer. The method aims to solve the problem that the back surface of the brittle semiconductor wafer is easily in contact with equipment during the front surface pixelization process, which causes scratches and further affects the performance of the detector. The method comprises the following steps: pasting a layer of debondable protective adhesive film on the back surface of the wafer; then performing processes such as front surface photoetching and electrode deposition; after the processes are completed, the debonding property of the adhesive film is activated by heating, ultraviolet irradiation or energization, so that the adhesive force of the adhesive film is greatly reduced or disappears; finally, the adhesive film is peeled off, and the back surface of the wafer is cleaned. The protective adhesive film can be pyrolytic, UV debondable or electrochemical, can stably adhere and provide physical isolation during the process, and can be removed cleanly and with low stress after the process. The method can effectively prevent the back surface of the wafer from being scratched, avoid the residual of the adhesive, and help improve the production yield and electrical performance consistency of the final device.

This invention provides an activation solution for activating cadmium telluride thin films and its application in the preparation of cadmium telluride thin-film solar cells. The activation solution uses tellurium tetrachloride and cadmium perchlorate hydrate as additives added to an aqueous solution of cadmium chloride. Tellurium tetrachloride generates tellurium dioxide and further tellsurium, which remains on the surface of the cadmium telluride, forming a tellurium-rich layer. Cadmium perchlorate or its hydrate acts as a dispersant, preventing the aggregation of tellurium dioxide and tellurium generated by tellurium tetrachloride, thus promoting the formation of a uniform tellurium-rich layer. Furthermore, cadmium perchlorate hydrate can decompose into cadmium chloride, which can also be used as an activation material. When this activation solution is used in the preparation of cadmium telluride thin-film solar cells, no residual chlorine atoms are detected in the activated cadmium telluride film, and acid etching is unnecessary. A tellurium-rich layer is formed on the crystal surface, and the resulting cadmium telluride solar cell chip achieves a power generation efficiency of 18.5%.

This application provides a large-grain cadmium telluride thin film and its preparation method, relating to the field of solar cell device technology. The invention employs a three-step growth method: first, a two-step process is used to generate a template for large-grain cadmium telluride growth; then, a secondary epitaxial deposition of cadmium telluride is performed to obtain the large-grain cadmium telluride thin film. The resulting large-grain cadmium telluride has a grain size of 50-200 μm, an average grain size of 95-155 μm, and a grain size variation coefficient of less than 15%. This method solves the problems of slow growth rate and high cost in large-scale production of epitaxial cadmium telluride thin films. Simultaneously, it addresses the problem in existing cadmium telluride thin-film solar cell technology where polycrystalline cadmium telluride thin films have small, uneven grains and cannot regenerate, resulting in a low minority carrier lifetime.

This invention discloses a method for preparing dimethyl tellurium. The method includes the following steps: slowly adding a dimethyl ether solution dropwise into a boron triiodide solution; washing and drying the reaction mixture to obtain an organic phase; adding the organic phase dropwise into a mixture of disodium telluride and an alcohol reagent; separating the reaction product by distillation; and purifying the reaction product to obtain dimethyl tellurium. This invention uses low-toxicity, inexpensive dimethyl ether instead of highly toxic dimethyl sulfate or expensive iodomethane, fundamentally solving the raw material safety bottleneck and significantly reducing production costs. The synthetic route using dimethyl ether, boron triiodide, and disodium telluride as the main raw materials significantly reduces byproducts and impurities in the direct product, simplifies subsequent purification steps, and allows for the acquisition of high-purity dimethyl tellurium through simple distillation, effectively improving the yield and purity of the final product and showing good prospects for industrial application.

Nanocrystal heterostructures having a core / shell structure that emit light at wavelengths longer than the bulk bandgap would typically allow for. In some disclosed embodiments, there are two shell layers, and the three materials are selected from sulfide, selenide, and telluride semiconductors. Also, a solar module having an encapsulation layer including type II nanocrystal heterostructures, exhibiting sub-bandgap emission are incorporated into the encapsulation layer for improved photovoltaic performance is disclosed.

The application provides a cadmium telluride power generation glass building outer wall mounting structure, and belongs to the technical field of new energy, which comprises a frame, power generation glass, a detection assembly, a clamping assembly and a driving assembly, the frame is fixedly installed on the wall body of a building outer wall, the clamping assembly is movably arranged on the inner side of the frame and is used for clamping the power generation glass, the driving assembly is installed on the inner side of the frame, and the detection assembly is arranged on the side wall of the frame and is used for detecting external wind power; when the detection assembly detects that the external wind power reaches a predetermined size, the driving assembly is used for driving the clamping assembly to move away from the building outer wall. Compared with the prior art, the embodiment of the application can automatically adjust the position of the power generation glass according to the size of external wind power, so that the internal and external pressure difference of the power generation glass is maintained at a small degree, thereby preventing the power generation glass from being broken and damaged due to strong wind, and improving the safety of the power generation glass in strong wind weather.

This invention relates to the field of photovoltaic module technology and discloses a cadmium telluride thin-film photovoltaic module and its preparation method, comprising: providing a cadmium telluride cell layer, including at least a glass substrate, a front electrode layer, and an absorber layer stacked together; forming a contact layer on the side of the cadmium telluride cell layer near the absorber layer to form a first intermediate; stacking two first intermediates with the contact layers facing each other, and forming a sealant layer at the edge between the two glass substrates, the sealant layer being located on the side of the front electrode, cell layer, and contact layer to obtain a second intermediate; chemically thinning the two glass substrates in the second intermediate, the thinned glass substrates serving as the front glass; removing the area corresponding to the sealant layer to separate the second intermediate from the two contact layers to obtain two third intermediates; and forming a cadmium telluride thin-film photovoltaic module. This invention can improve the efficiency and yield of the chemical thinning process and improve the reliability of the cadmium telluride thin-film photovoltaic module.

The application discloses a kind of composite fluorescent visualization sensor and its preparation method and application, it is related to analytical detection technical field;Composite fluorescent visualization sensor is prepared by the following method: first, synthesis of sulfhydryl succinic acid modified cadmium telluride quantum dots and N-acetyl-L-cysteine modified cadmium telluride quantum dots, then porphyrin stock solution is mixed with N-acetyl-L-cysteine modified cadmium telluride quantum dots, namely the chiral nano porphyrin solution can be obtained, finally it is mixed with the sulfhydryl succinic acid modified cadmium telluride quantum dots synthesized in advance, and composite fluorescent visualization sensor can be prepared;The composite fluorescent visualization sensor of quantum dot-nano porphyrin prepared by the application has good selectivity to L / D- theanine and has high sensitivity and anti-interference performance, and can be used for visualizing precise analysis of L / D- theanine content, with the advantages of simple operation, high sensitivity, low cost and the like.

This invention discloses an epitaxial growth method for iron telluride thin films with controllable crystal phase structure and magnetic properties, belonging to the field of iron chalcogenide thin film preparation technology. This invention achieves the directional selective preparation of tetragonal and hexagonal FeTe thin films by precisely matching the substrate crystal symmetry with the growth temperature window. Compared to the limitations of existing CVD methods, which rely on specific precursors, generate harmful gases, and are difficult to prepare large-area epitaxial films, this invention features a simple process, requires no special precursors, has a highly controllable growth process, good repeatability, and produces thin films with high crystallinity, uniform composition, and controllable thickness. The two crystal phases have significantly different magnetic properties, providing a material selection for antiferromagnetic pinning layers and ferromagnetic storage media in spintronic devices, effectively promoting the research and application in low-dimensional magnetic devices, high-density magnetic storage, and spin valves.

This invention discloses a method for in-situ growth of cadmium telluride on the surface of tungsten trioxide (TTO) and the resulting heterocomposite material. The method first prepares blue TTO rich in oxygen vacancies by irradiating TTO in formaldehyde solution with ultraviolet light. Then, utilizing the reducing properties of this blue TTO, it reacts with tellurium dioxide and a cadmium source in an alkaline aqueous solution, thereby growing cadmium telluride in situ on the surface of the blue TTO, forming a WO3 / CdTe heterocomposite material. This invention eliminates the need for an external reducing agent, utilizing the inherent properties of the carrier to drive the reaction, achieving in-situ chemical bonding between the two semiconductors and forming a tightly bonded heterojunction interface. The synthesis method of this invention effectively promotes the separation of photogenerated electrons and holes, significantly improves the photocurrent response and photocatalytic activity of the resulting heterocomposite material, and simultaneously enhances the composite material's resistance to photocorrosion, solving the problems of low charge separation efficiency of single WO3 and poor stability of single CdTe.

The application discloses a preparation method of a vanadium-doped carbon composite back contact layer and application of the vanadium-doped carbon composite back contact layer in preparation of a cadmium telluride solar cell. The method comprises the following steps: firstly, performing a coordination reaction on a vanadium source compound and a carbazole monomer to prepare a vanadium-doped carbazole polymer; secondly, dissolving and coating the polymer on a surface of a cadmium telluride light absorption layer; and thirdly, performing gradient annealing treatment on the polymer to convert the polymer into the vanadium-doped carbon composite back contact layer in situ. During the gradient annealing process, selective rupture of coordination bonds of the polymer is caused, and vanadium ions released from the polymer preferentially diffuse along cadmium telluride grain boundaries to form a local P + Doped region; At the same time, the polymer main chain is carbonized to form a dense conductive network similar to graphene. The prepared back contact layer has high conductivity and high efficient hole transport function, can effectively control the contact potential barrier between the cadmium telluride light absorption layer and the back electrode, and improves the injection and collection efficiency of holes.

The application provides a preparation method of a phase change storage material titanium-antimony-tellurium target material, and belongs to the field of microelectronic technology. The application adopts a segmented heat treatment process of high first and low later, ensures that titanium and antimony and titanium and tellurium are synthesized into titanium antimonide and titanium telluride respectively, and titanium antimonide and titanium telluride have better compatibility compared with metal titanium and antimony telluride, long time insulation during synthesis ensures complete reaction, titanium can be uniformly distributed in the grain boundary of antimony telluride after the target material is prepared, and then low-temperature vacuum hot-pressing sintering is adopted to prevent target material grain growth caused by high temperature, and long time pressure keeping is adopted to ensure that the phase is more uniform, the phase change storage material titanium-antimony-tellurium target material with high purity, low oxygen content and relative density greater than or equal to 95% is obtained, the quality index is better, and therefore the thin film deposition efficiency and performance can be improved.

The application discloses a preparation method of a vanadium-doped carbon composite back contact layer and application of the vanadium-doped carbon composite back contact layer in preparation of a cadmium telluride solar cell. The method comprises the following steps: firstly, performing a coordination reaction on a vanadium source compound and a carbazole monomer to obtain a vanadium-doped carbazole polymer; secondly, dissolving and coating the polymer on a surface of a cadmium telluride light absorption layer; and thirdly, performing gradient annealing treatment on the polymer to convert the polymer into the vanadium-doped carbon composite back contact layer in situ. During the gradient annealing process, selective rupture of coordination bonds of the polymer is caused, and vanadium ions released from the polymer preferentially diffuse along cadmium telluride grain boundaries to form a local P + Doped region; At the same time, the polymer main chain is carbonized to form a dense conductive network similar to graphene. The prepared back contact layer has high conductivity and high efficient hole transport function, can effectively control the contact potential barrier between the cadmium telluride light absorption layer and the back electrode, and improves the injection and collection efficiency of holes.