268 results about "Telluride" patented technology

The invention discloses a far-infrared band optical thin film, a preparation method thereof and an optical element, and relates to a far-infrared band optical thin film technology, the far-infrared band optical thin film comprises a substrate, a front band-pass film system and a back cut-off film system; wherein the front band-pass film system is located on one side of the substrate, and the back cut-off film system is located on the other side of the substrate; the far infrared band optical thin film is prepared by alternately depositing lead telluride serving as a high-refractive-index thin film material and cadmium telluride serving as a low-refractive-index thin film material. The far infrared band optical thin film can cut off the band with the wavelength smaller than 4 microns, and the average transmittance is 0.23%; anti-reflection is carried out at the wave band of 5-50 microns; the moisture-resistant performance is excellent.

A method of manufacturing a CdTe-based thin film solar cell device having a graded refractive index profile within a CdTe (cadmium telluride)-based absorber layer, comprising the steps of: a) providing a transparent substrate comprising a front electrode, b) forming a doped CdTe-based absorber layer on the substrate, c) performing an activation treatment after step b). The doped CdTe-based absorber layer in step b) is a doped CdTe-based absorber layer stack comprising a first layer and a second layer. The first layer is a first doping element-containing layer including vanadium as a first doping element, which is formed by depositing a first doping element-enriched layer followed by depositing a CdSe (cadmium selenide) layer or a CdSeTe (cadmium selenium telluride) layer, or by depositing a CdSe layer or a CdSeTe layer each doped with a first doping element. The second layer is formed by depositing a CdTe layer. The invention also relates to a CdTe-based thin-film solar cell device with gradient refractive index distribution.

The invention belongs to the technical field of biosensors, and provides a cadmium telluride quantum dot-based fluorescent biosensor for detecting tetracycline, which comprises a CdTe quantum dot, an Apt-T composite probe, M-2P, a C chain and an Ag-HP chain, the Apt-T composite probe is obtained by hybridizing Apt and a T chain; the M-2P is obtained by hybridizing an M chain and a P chain according to a molar ratio of 1: 2; the nucleotide sequences of Apt, T, M, P, C and HP are as shown in SEQ ID NO: 1-6. The sensor disclosed by the invention has the advantages of high detection speed, simplicity in operation, low price, low detection limit, high specificity and the like, can make up for the defects and deficiencies of the existing tetracycline detection method, and realizes rapid and accurate quantitative detection of tetracycline.

The invention relates to the technical field of analysis and detection, in particular to a fluorescent switch sensor based on quantum dot-nano porphyrin and application. The specific technical scheme is as follows: the fluorescent switch sensor is constructed by utilizing cadmium telluride quantum dots modified by mercaptosuccinic acid and a 5, 10, 15, 20-tetra (4-nitrophenyl) porphyrin nano material modified by a cationic surfactant hexadecyl trimethyl ammonium bromide. And the method has a good enrichment effect on zearalenone. The sensor has high sensitivity, high selectivity and anti-interference performance, can accurately analyze trace zearalenone in actual grain samples (corn, rice, soybean and the like), and has the advantages of simplicity in operation, low detection limit, high sensitivity, low cost and the like.

The invention discloses a group III chloride ex-situ doped cadmium telluride thin film solar cell and a preparation method thereof, and the cadmium telluride thin film solar cell comprises a substrate layer, a transparent conductive oxide thin film layer, a high-resistance buffer layer, a cell window layer, a cell layer, a back contact layer and a back electrode layer which are sequentially arranged from bottom to top. The cell layer comprises an absorption layer and a IIICl3 layer coated on the upper surface of the cell window layer, and IIICl3 is chloride of the III main group element. According to the III-group chloride ex-situ doping method provided by the invention, the III-group chloride can be dissolved in an organic solution, room-temperature solution deposition is allowed, III-group cations are easy to diffuse at a relatively low annealing temperature, and a complex annealing process is not needed to activate a dopant; through a simple solution process and low-temperature activation, efficient doping of the CdTe absorption layer is effectively realized, and the open-circuit voltage and the overall photoelectric conversion efficiency of the cell are remarkably improved.

The invention belongs to the technical field of seedling cultivation, and discloses a cadmium telluride power generation glass three-dimensional multilayer seedling raising greenhouse and an illumination regulation and control system. Comprising a layered illumination sensing module which constructs an interlayer illumination distribution map and an interlayer illumination profile map based on the photosynthetically active radiation density of each seedling raising layer; the light-requiring threshold generation module is used for generating a target illumination intensity upper and lower limit curve of each seedling raising layer based on seedling raising crop types, growth stages and environmental parameters; the illumination comprehensive judgment module is used for identifying seedling raising layers with insufficient illumination or excessive illumination based on the interlayer illumination distribution map and a target illumination intensity upper and lower limit curve, and generating a dimming priority sequence in combination with the interlayer illumination profile map; the illumination intelligent control module is used for generating and executing a distributed dimming instruction set by combining the dimming priority sequence based on the output power of the cadmium telluride power generation glass and the consumed power of the seedling raising greenhouse; according to the invention, distributed self-adaptive light supplement is realized in the seedling raising process in the cadmium telluride power generation glass seedling raising greenhouse.

The invention discloses a laser etching dust extraction flight following system and a control method, and relates to the technical field of thin film solar cell manufacturing. The following system comprises a focusing dust extraction module, a following driving module, a cooperative control unit and a negative pressure dynamic adjusting module. The cooperative control unit comprises a following PLC controller and a motion control card, the following PLC controller synchronously obtains path planning information from a galvanometer flight system of a laser beam and generates a displacement instruction, and the displacement instruction is sent to a following driving module through the motion control card; and the following driving module and a galvanometer scanning module of the galvanometer flight system are synchronously triggered, and the following driving module moves according to the displacement instruction and controls the center of the dust extraction cover body and the etching point of the laser beam to coaxially move in a following manner. The method is low in dust removal efficiency and series resistance, good in parameter stability, low in equipment maintenance cost and suitable for processing large-size thin film batteries such as perovskite and cadmium telluride.

The invention discloses a combined cadmium telluride photoelectric curtain wall structure and a construction method thereof, relates to the technical field of wastewater treatment, and aims to solve the technical problem that a current combined cadmium telluride photoelectric curtain wall is easily influenced by the natural environment. Comprising a plurality of mounting parts, a mounting frame mechanism fixed on the mounting parts and a same-color frame arranged on the front surface of the mounting frame mechanism; the mounting frame mechanism comprises a side vertical beam, a middle vertical beam, a first cross beam and a second cross beam, the first cross beam and the second cross beam are mounted between the side vertical beam and the middle vertical beam, and the same-color frame comprises a side barrier strip, an upper barrier strip, a lower barrier strip and a middle barrier strip which are used for shielding the mounting frame mechanism. The photovoltaic module has the advantages that dust adhesion is reduced through the design of the air cavity and the air port, the arc-shaped barrier strip and the water tank rapidly drain water, the rectangular-ambulatory-plane sealing groove is matched with the sealant for multiple protection, the Sudoku structure is stably installed, the same-color frame gives consideration to decoration and circuit protection, the influence of the natural environment is effectively resisted, the photoelectric conversion efficiency is maintained, the waterproofness is improved, and the service life is prolonged.

The invention discloses a tellurium-doped carbon quantum dot and a preparation method and application thereof, the tellurium-doped carbon quantum dot is obtained by using 2, 2 '-diaminodiphenyl telluride as a precursor, the average particle size is 1.9 nm, the thickness is about 2.1 nm, and the surface is rich in amino groups. And fixing (4-carboxybutyl) triphenylphosphonium bromide, 3-morpholinopropionic acid or 3-((4-methylphenyl) sulfonamide) propionic acid on the surfaces of the tellurium-doped carbon quantum dots to prepare Mito-Te-CDs, Lyso-Te-CDs and ER-Te-CDs with an organelle targeting function. The Mito-Te-CDs, the Lyso-Te-CDs and the ER-Te-CDs are good in biocompatibility, can be used as fluorescent probes for targeted imaging of organelles, can be used for recognition and removal of superoxide anions in specific organelles, have a protection effect on cells and can be used for effectively treating acute kidney injury.

The invention discloses an assembly type cadmium telluride solar module and a solar curtain wall, and belongs to the technical field of curtain walls, the assembly type cadmium telluride solar module comprises a cadmium telluride solar curtain wall body and an assembly outer frame arranged on one side of the cadmium telluride solar curtain wall body, and one side of the cadmium telluride solar curtain wall body is bonded with a connecting frame through glue; an assembly inner frame is arranged on one side of the assembly outer frame, and the assembly outer frame is rotationally connected with the assembly inner frame through a hinge; an outer transverse plate and an inner transverse plate are fixedly connected to the inner walls of the outer assembling frame and the inner assembling frame correspondingly, an auxiliary electric push rod is embedded in the side face of the outer transverse plate, a moving part of the auxiliary electric push rod is connected with a pulley used for pushing the inner transverse plate to move, a winch is installed on the inner wall of the outer assembling frame, and a steel wire rope of the winch is fixedly connected with the inner assembling frame. And a plurality of safety ropes are connected between the outer transverse plate and the inner transverse plate. According to the assembly type cadmium telluride solar module and the solar curtain wall, the inclination angle can be adjusted, and the stability can be guaranteed.

The invention relates to a preparation method of a tellurium-cadmium-mercury double-layer component heterostructure. The preparation method comprises the following steps: forming a doped region on the surface of a tellurium-cadmium-mercury material through ion implantation; impurity distribution is adjusted through impurity distribution regulation and control annealing; growing a cadmium telluride film on the surface of the mercury cadmium telluride; performing diffusion annealing to cause mutual diffusion between cadmium telluride and mercury cadmium telluride, and removing the cadmium telluride film to form a mercury cadmium telluride material with a double-layer component heterostructure; the preparation difficulty of the HgCdTe double-layer component heterostructure is reduced, a good passivation structure can be formed on the HgCdTe surface, the matching of the component heterostructure and the PN junction relative position is easy to realize, and the dark current of the HgCdTe infrared detector is inhibited.

The utility model discloses a cadmium telluride power generation glass sound barrier which comprises a base frame, the base frame is of a U-shaped structure, movable grooves are formed in the inner walls of the two sides of the base frame, a lower sound insulation plate is arranged at the lower end in the base frame, a plurality of upper sound insulation plates are installed on the inner side of the base frame above the lower sound insulation plate, and movable blocks are arranged on the outer walls of the two sides of the upper sound insulation plates. A plurality of locking bolts are installed on the outer surfaces of the two sides of the base frame, one ends of the locking bolts penetrate through the base frame and are in threaded connection with the surfaces of the movable blocks, bottom frames are arranged on the two sides of the bottom end of the base frame, two L-shaped positioning bases are arranged on the outer walls of the bottom frames, and first cadmium telluride power generation glass is installed on the outer wall of one side of the lower sound insulation plate. Second cadmium telluride power generation glass is installed on the outer wall of the side, away from the first cadmium telluride power generation glass, of the lower sound insulation plate. According to the utility model, the purpose that the sound barrier is easy to replace and maintain is achieved, the energy utilization efficiency is improved, and the stability of the sound barrier in use is improved.

The invention relates to a silicon-based tellurium-cadmium-mercury material, an infrared focal plane detector and a preparation method of the silicon-based tellurium-cadmium-mercury material. The silicon-based tellurium-cadmium-mercury material comprises a silicon substrate, a cadmium telluride buffer layer and a tellurium-cadmium-mercury layer, wherein the cadmium telluride buffer layer and the tellurium-cadmium-mercury layer grow on the front surface of the silicon substrate; the back surface of the silicon substrate is provided with an optical metasurface structure, and the optical metasurface structure is composed of microstructure units which are periodically arranged; the size of the maximum cross section of each microstructure unit ranges from 100 nm to 150 nm, the distance between the centers of the maximum cross sections of the adjacent microstructure units ranges from 800 nm to 1000 nm, and the size of each microstructure unit in the direction perpendicular to the surface of the silicon substrate ranges from 400 nm to 600 nm. Experimental results show that when incident light is vertically incident, the infrared transmittance of the material in a medium-wave infrared band of 3-5 microns is greater than or equal to 90%; and when the incident angle of incident light is 0-30 degrees, the infrared transmittance of the material in a medium-wave infrared band of 3-5 microns is still greater than or equal to 90%.

The application relates to the field of building energy saving, and particularly discloses a photovoltaic-electrochromic integrated toughened vacuum insulating glass intelligent outer facade component which comprises, from outside to inside, a first toughened glass substrate, a first PVB film, a cadmium telluride battery piece, a second PVB film, a second toughened glass substrate, a hollow layer, an EC electrochromic layer, a third toughened glass substrate, a vacuum cavity, a support column, an inner layer toughened glass substrate and a wiring module. The cadmium telluride battery piece is used for providing driving electric energy for the EC electrochromic layer, the vacuum cavity and the hollow layer form a double heat insulation structure, and the wiring module is used for realizing electric energy transmission and control signal access. The application realizes integrated integration of photovoltaic power generation, electrochromic light control and vacuum insulation functions, has the characteristics of good energy saving effect, high structural strength, excellent sealing performance and high intelligent degree, and is suitable for the field of building outer facades.

The application provides an infrared absorption material based on doping regulation, a preparation method and an infrared detector. By introducing selenium atoms to replace tellurium atoms in a sodium gallium telluride material, the material is doped according to a doping ratio of 1:4 to 1:2 of atomic weight, the energy band structure and optical properties of the material are regulated, a new infrared absorption material is obtained, and the light absorption performance of the material in the infrared wave band is significantly improved. According to the component characteristics of the infrared absorption material, a specific preparation scheme is provided, the preparation is completed by grinding, secondary melting and annealing treatment of the set principle mass of sodium single substance, gallium single substance, tellurium single substance and selenium single substance, and the band gap and absorption intensity are accurately adjusted, and the symmetry and crystal stability of the material are also considered.

The invention belongs to the technical field of solar cells, and particularly relates to a preparation method and application of a copper-doped cadmium telluride thin-film solar cell. The preparation method of the copper-doped cadmium telluride thin-film solar cell comprises the following steps: preparing a transparent conductive layer, a window layer, an absorption layer and a back contact layer on a transparent substrate in sequence, then soaking the transparent substrate in a copper salt solution, then preparing a back electrode layer on the side of the back contact layer, and carrying out annealing treatment. According to the invention, copper doping is realized based on a soaking method, and hole transport efficiency can be improved, energy band matching can be optimized and interface recombination loss can be reduced by controlling the concentration, the type and the soaking time of the copper salt solution, so that the solar cell has good open-circuit voltage, short-circuit current and filling factors, relatively high conversion efficiency can be realized, and the conversion efficiency can reach 19.62%. Meanwhile, the preparation process is simple and can be completed in the atmospheric environment, and compared with a traditional process, the annealing temperature is low, so that the preparation cost is low.

The invention belongs to the technical field of sodium-ion batteries, and particularly relates to an iron-manganese-based sodium-ion battery positive electrode material as well as a preparation method and application thereof. The preparation method of the iron-manganese-based sodium ion battery positive electrode material comprises the following steps: adding ferric nitrate and manganese nitrate into water for dissolving, performing spray pyrolysis to obtain an iron-manganese oxide precursor, performing ball-milling mixing on sodium carbonate, the iron-manganese oxide precursor and lanthanum telluride, and calcining in an inert gas atmosphere to obtain a composite material; and adding Ni4O4 cubic alkane modified carbazole, the composite material and manganese dioxide into dilute sulphuric acid for ultrasonic dispersion, stirring for reaction, centrifuging, washing and drying to obtain the iron-manganese-based sodium ion positive electrode material. The iron-manganese-based sodium ion battery positive electrode material provided by the invention has the advantages of stable rate cycle, high specific capacity and excellent capacity retention rate.

The invention discloses a method for surface reconstruction of a ligand-regulated oxygen evolution catalyst, the catalyst and application of the catalyst. The methods involve ligand tuned surface reconstruction capable of simultaneous incorporation of doped cations and oxygen vacancies to improve the catalytic activity of the OER. Surface engineered heterointerface structures consisting of nickel-based precatalysts and (oxy) hydroxides have been developed based on the ligand-induced delayed doping effect using ammonia complexes in alkaline electrolytes by using nickel telluride, nickel oxide, nickel sulfide or nickel selenide as the precatalyst. The method is simple in process, easy to operate and capable of being industrially popularized; and the prepared oxygen evolution catalyst has the characteristics of abundant active sites and oxygen vacancies, large chemical active surface area, good stability, controllability and low cost.

The invention belongs to the technical field of energy conservation and environmental protection, and discloses a cadmium telluride power generation glass and photovoltaic energy storage integrated agricultural greenhouse system. The assembly design module is used for dividing cadmium telluride power generation glass into N subunits, and a pi-type thermocouple is integrated on a back plate of each subunit; the crop detection module is used for acquiring and analyzing crop states through subunits and generating crop labels according to the crop states; according to the dynamic shading module, each subunit is connected with a thermoelectric module, the thermoelectric modules are directly connected with an electrochromic glass shading plate, and the fog state light transmittance of the shading plate is dynamically adjusted according to crop labels; according to the intelligent energy storage module, each subunit integrates a cadmium telluride power generation layer, a thermoelectric conversion layer and a super capacitor, and an intelligent charging and discharging strategy is generated according to the illumination intensity. The energy utilization module is used for obtaining a composite adjustment strategy according to the crop label and the energy storage level corresponding to the intelligent charging and discharging strategy; through the integrated design, collaborative optimization of the power generation efficiency, the energy utilization rate and the crop stress damage rate is achieved.

The invention discloses a cadmium telluride crystal cutting device and a cutting method thereof, and belongs to the technical field of cadmium telluride machining. A protective cover is pressed downwards, an upper pressing wheel is stressed to drive a rotating shaft to rotate through a deflection plate, and the rotating shaft drives a side pressing wheel to rotate synchronously through a deflection frame; the side pressing wheels limit the top and the side face of the cadmium telluride crystal, the cadmium telluride crystal is positioned, the protective cover is supported by the first spring, the protective cover can cover the cadmium telluride crystal, pressure is applied to the upper pressing wheel and the side pressing wheels, then the cadmium telluride crystal is always kept at the cutting center position after being clamped, and the cutting efficiency is improved. The cutting machine moves downwards in cooperation to cut cadmium telluride crystals, the protective cover separates a cutting area from the outside, impurities cannot be introduced into the protective cover, the dust suction cover is matched to adsorb dust in the protective cover, and dust particles can be filtered when the dust enters the filter box; and dust generated by cutting is prevented from splashing everywhere to influence the machining environment and damage personnel.

The application relates to the technical field of photovoltaic cells and discloses a tellurium cadmium selenide film near-space sublimation deposition method and equipment, wherein the tellurium cadmium selenide film near-space sublimation deposition method comprises the following steps: a cadmium selenide heating chamber is used to heat cadmium selenide raw materials, a first gaseous reaction precursor is obtained, the heating temperature is T1, a cadmium telluride heating chamber is used to heat cadmium telluride raw materials, a second gaseous reaction precursor is obtained, the heating temperature is T2, T1>T2 is met, the first gaseous reaction precursor is introduced into a mixing chamber through a first gas outlet pipe, the second gaseous reaction precursor is introduced into the mixing chamber through a second gas outlet pipe, mixed gas is obtained in the mixing chamber, the mixed gas is transported to a nozzle through a connecting pipe, and the nozzle is sprayed towards a substrate, so that a tellurium cadmium selenide film is formed on the surface of the substrate. The cadmium selenide and the cadmium telluride binary alloy are used for near-space sublimation deposition, the stability of the tellurium cadmium selenide film can be remarkably improved, and the photoelectric conversion efficiency of the cell is improved.

The invention discloses a cadmium telluride solar cell and a preparation method thereof. The cadmium telluride solar cell comprises a substrate, a TCO layer, a window layer, a cadmium telluride layer, an aluminum oxide passivation layer, a back contact layer and a back electrode layer which are arranged in sequence. The surface, rich in oxygen atoms, of the aluminum oxide passivation layer can effectively passivate dangling bonds and defect states on the surface of CdTe, so that the open-circuit voltage (Voc) and the fill factor (FF) of the cell are improved; the aluminum oxide passivation layer forms a high conduction band bottom barrier for electrons, so that the electrons can be effectively prevented from moving from CdTe to the back contact direction to improve Voc; and meanwhile, the interface state pinning effect can be reduced, so that better energy band bending can be formed.

Detectors for computed tomography scanners may include a cathode, a cadmium telluride material, a cadmium zinc telluride material, or a silicon material adjacent to the cathode, and an array of anodes located on a side of the cadmium telluride material, the cadmium zinc telluride material, or the silicon material opposite the cathode, A substrate may be located proximate to the array of anodes, anodes of the array of anodes electrically connected to the substrate. A microelectronic device may be located on a side of the substrate opposite the cadmium telluride material, the cadmium zinc telluride material or the silicon material. The microelectronic device may be electrically connected to the substrate with the microelectronic device mounted to the substrate in a flip-chip orientation. Electrically conductive elements may be located adjacent to the microelectronic device and electrically connected to the substrate.

The invention provides a mercury-cadmium-telluride material, a surface passivation heat treatment method thereof and an infrared detector, the surface passivation heat treatment method of the mercury-cadmium-telluride material comprises the following steps: S1, pretreating the surface of a mercury-cadmium-telluride substrate; s2, depositing and growing a high-component HgCdTe film layer on the surface of the tellurium-cadmium-mercury substrate; s3, depositing and growing a CdTe passive film layer on the surface of the high-component HgCdTe film layer; s4, depositing and growing a ZnS passive film layer on the surface of the CdTe passive film layer; and S5, carrying out passive heat treatment on the tellurium-cadmium-mercury substrate treated in the step S4 under the protection of an inert atmosphere. The three composite passivation film layers are adopted, and the high-component HgCdTe film layer and the HgCdTe substrate material are basically consistent in component, crystal structure and lattice constant, so that the problems that the CdTe film layer preparation process is high in requirement, CdTe / HgCdTe generates stress and dislocation and the like when the traditional CdTe passivation film layer is adopted as the first passivation material layer are solved; the process requirement of preparation of the CdTe passive film layer is reduced, the complexity of a heat treatment process is reduced, and the process window of HgCdTe device processing is widened.

The invention relates to the technical field of cadmium telluride power generation glass, in particular to a copper-doped back contact layer, a preparation method of the copper-doped back contact layer and cadmium telluride power generation glass. The preparation method of the copper-doped back contact layer comprises the following steps: firstly preparing the back contact layer, then preparing a copper paste dot matrix on the back contact layer, and finally carrying out two-stage heat treatment, the first-stage heat treatment temperature of the two-stage heat treatment is 180-220 DEG C, and the second-stage heat treatment temperature of the two-stage heat treatment is 250-300 DEG C. According to the preparation method, an intrinsic zinc telluride (i-ZnTe) buffer layer is introduced and combined with a dot-matrix copper doping technology, and a super-stable back contact structure which is gently transited in energy band, extremely low in interface recombination and strictly limited in Cu ions is constructed between the CdTe absorption layer and the metal back electrode, so that the cadmium telluride power generation glass which is higher in efficiency and longer in service life is prepared.

The invention discloses a preparation method and application of a cerium-doped CoTeO3 nano-cluster catalyst, and belongs to the technical field of chemical energy materials. The preparation process comprises the following steps: firstly preparing a metal salt solution and a NaHTe solution, dropwise adding the NaHTe solution into the metal salt solution, stirring, centrifuging, cleaning and drying to obtain the cerium-doped CoTeO3 nano-cluster catalyst. The cerium-doped CoTeO3 nano-cluster catalyst prepared by the invention is constructed by a chemical reduction method, the conductivity of the catalyst is remarkably enhanced by introducing transition metal telluride, and the electronic structure of active sites is further optimized by doping rare earth cerium. In an electrocatalytic oxygen evolution reaction (OER), the catalyst breaks through the energy barrier limitation of a catalytic reaction intermediate by introducing a lattice oxygen oxidation mechanism (LOM), shows excellent catalytic activity and stability, and shows a good industrial application prospect.

The present invention discloses a method and application for detecting rabies virus by an optoelectrochemical aptasensor. The aptasensor is prepared through the following steps: CdTe QDs are assembled on the surface of a carbon-doped TiO2 nanoparticle electrode by electrostatic adsorption; NH2-RNA-SH / Au NPs are immobilized on the TiO2:C-NP / CdTe electrode through a classical EDC coupling reaction between the carbonyl group on CdTe QDs and the amino group of the probe, thereby constructing the aptasensor TiO2:C-NP / CdTe / AuNPs / PRNA; then, monoethanolamine is used to block the unbound sites on the electrode surface to avoid false positives caused by non-specific binding. The present invention utilizes the efficient exciton energy transfer between cadmium telluride quantum dots and gold nanoparticles, and can quickly and reliably diagnose rabies virus, with the lowest detection concentration limit being approximately 2.6 ffu / mL.

This invention discloses a cadmium telluride thin-film solar cell with a cadmium oxide passivation layer and its preparation method, including the following steps: (1) Pretreatment: The cadmium telluride thin film covered by the cadmium oxide layer formed by CdCl2 annealing is placed in a vacuum tube furnace, and the vacuum is drawn to a negative pressure state to remove residual O2; (2) Reduction treatment: The vacuum pump is turned off, an inert gas is introduced, the temperature is raised to the reduction reaction temperature and kept at the temperature, and then a mixture of reducing gas and inert gas is introduced under positive pressure to carry out the reduction reaction; the reduction reaction temperature is 200~400℃; the ratio of reducing gas to inert gas mixture is 1-20%; the reaction time is 5-30min; (3) Posttreatment: The heating is turned off, an inert gas is introduced to cool to room temperature to form a cadmium oxide layer covered by a metal Cd layer.

The application discloses a silver-free high-temperature lubricating coating and a preparation method and application thereof, and comprises the following steps: S1: stirring and mixing an aluminum source, a magnesium source, a chromium source and a phosphoric acid aqueous solution to obtain a mixed solution; S2: mixing the mixed solution with a tellurium source, a molybdenum source and a cobalt source, and obtaining a silver-free high-temperature lubricating coating after ball milling; and coating the silver-free high-temperature lubricating coating on a base material, and obtaining a silver-free high-temperature lubricating coating after solidification. The application provides the high-temperature lubricating coating which is applied to high-temperature alloy fasteners and adopts a telluride to replace silver as a high-temperature lubricating material, and the high-temperature lubricating coating has better high-temperature resistance and stronger stability compared with other coatings; the telluride can maintain the original structure and performance under 600-800 DEG C.

The invention provides a preparation method of a Schottky contact for radiation detection based on a cadmium telluride single crystal, and solves the problems of Fermi level pinning and uncontrollable interface morphology of the cadmium telluride Schottky contact prepared by the existing method. The Schottky contact is successfully prepared by adopting a transfer method, the metal electrode and the substrate are separated by utilizing polydimethylsiloxane and a tungsten steel gold-plated probe through a mechanical stripping method, then the metal electrode is directly lapped on the clean cadmium telluride surface, and the adhesion between the polydimethylsilane and the metal electrode is reduced through heating, so that the Schottky contact is prepared. Finally, separation of the polydimethylsilane and the metal electrode and preparation of the cadmium telluride surface metal electrode are achieved.