188 results about "Telluride" patented technology

The invention relates to the technical field of analysis and detection, in particular to a fluorescent switch sensor based on quantum dot-nano porphyrin and application. The specific technical scheme is as follows: the fluorescent switch sensor is constructed by utilizing cadmium telluride quantum dots modified by mercaptosuccinic acid and a 5, 10, 15, 20-tetra (4-nitrophenyl) porphyrin nano material modified by a cationic surfactant hexadecyl trimethyl ammonium bromide. And the method has a good enrichment effect on zearalenone. The sensor has high sensitivity, high selectivity and anti-interference performance, can accurately analyze trace zearalenone in actual grain samples (corn, rice, soybean and the like), and has the advantages of simplicity in operation, low detection limit, high sensitivity, low cost and the like.

The invention belongs to the technical field of seedling cultivation, and discloses a cadmium telluride power generation glass three-dimensional multilayer seedling raising greenhouse and an illumination regulation and control system. Comprising a layered illumination sensing module which constructs an interlayer illumination distribution map and an interlayer illumination profile map based on the photosynthetically active radiation density of each seedling raising layer; the light-requiring threshold generation module is used for generating a target illumination intensity upper and lower limit curve of each seedling raising layer based on seedling raising crop types, growth stages and environmental parameters; the illumination comprehensive judgment module is used for identifying seedling raising layers with insufficient illumination or excessive illumination based on the interlayer illumination distribution map and a target illumination intensity upper and lower limit curve, and generating a dimming priority sequence in combination with the interlayer illumination profile map; the illumination intelligent control module is used for generating and executing a distributed dimming instruction set by combining the dimming priority sequence based on the output power of the cadmium telluride power generation glass and the consumed power of the seedling raising greenhouse; according to the invention, distributed self-adaptive light supplement is realized in the seedling raising process in the cadmium telluride power generation glass seedling raising greenhouse.

The invention discloses a laser etching dust extraction flight following system and a control method, and relates to the technical field of thin film solar cell manufacturing. The following system comprises a focusing dust extraction module, a following driving module, a cooperative control unit and a negative pressure dynamic adjusting module. The cooperative control unit comprises a following PLC controller and a motion control card, the following PLC controller synchronously obtains path planning information from a galvanometer flight system of a laser beam and generates a displacement instruction, and the displacement instruction is sent to a following driving module through the motion control card; and the following driving module and a galvanometer scanning module of the galvanometer flight system are synchronously triggered, and the following driving module moves according to the displacement instruction and controls the center of the dust extraction cover body and the etching point of the laser beam to coaxially move in a following manner. The method is low in dust removal efficiency and series resistance, good in parameter stability, low in equipment maintenance cost and suitable for processing large-size thin film batteries such as perovskite and cadmium telluride.

The invention discloses a combined cadmium telluride photoelectric curtain wall structure and a construction method thereof, relates to the technical field of wastewater treatment, and aims to solve the technical problem that a current combined cadmium telluride photoelectric curtain wall is easily influenced by the natural environment. Comprising a plurality of mounting parts, a mounting frame mechanism fixed on the mounting parts and a same-color frame arranged on the front surface of the mounting frame mechanism; the mounting frame mechanism comprises a side vertical beam, a middle vertical beam, a first cross beam and a second cross beam, the first cross beam and the second cross beam are mounted between the side vertical beam and the middle vertical beam, and the same-color frame comprises a side barrier strip, an upper barrier strip, a lower barrier strip and a middle barrier strip which are used for shielding the mounting frame mechanism. The photovoltaic module has the advantages that dust adhesion is reduced through the design of the air cavity and the air port, the arc-shaped barrier strip and the water tank rapidly drain water, the rectangular-ambulatory-plane sealing groove is matched with the sealant for multiple protection, the Sudoku structure is stably installed, the same-color frame gives consideration to decoration and circuit protection, the influence of the natural environment is effectively resisted, the photoelectric conversion efficiency is maintained, the waterproofness is improved, and the service life is prolonged.

The invention discloses an assembly type cadmium telluride solar module and a solar curtain wall, and belongs to the technical field of curtain walls, the assembly type cadmium telluride solar module comprises a cadmium telluride solar curtain wall body and an assembly outer frame arranged on one side of the cadmium telluride solar curtain wall body, and one side of the cadmium telluride solar curtain wall body is bonded with a connecting frame through glue; an assembly inner frame is arranged on one side of the assembly outer frame, and the assembly outer frame is rotationally connected with the assembly inner frame through a hinge; an outer transverse plate and an inner transverse plate are fixedly connected to the inner walls of the outer assembling frame and the inner assembling frame correspondingly, an auxiliary electric push rod is embedded in the side face of the outer transverse plate, a moving part of the auxiliary electric push rod is connected with a pulley used for pushing the inner transverse plate to move, a winch is installed on the inner wall of the outer assembling frame, and a steel wire rope of the winch is fixedly connected with the inner assembling frame. And a plurality of safety ropes are connected between the outer transverse plate and the inner transverse plate. According to the assembly type cadmium telluride solar module and the solar curtain wall, the inclination angle can be adjusted, and the stability can be guaranteed.

The invention relates to a silicon-based tellurium-cadmium-mercury material, an infrared focal plane detector and a preparation method of the silicon-based tellurium-cadmium-mercury material. The silicon-based tellurium-cadmium-mercury material comprises a silicon substrate, a cadmium telluride buffer layer and a tellurium-cadmium-mercury layer, wherein the cadmium telluride buffer layer and the tellurium-cadmium-mercury layer grow on the front surface of the silicon substrate; the back surface of the silicon substrate is provided with an optical metasurface structure, and the optical metasurface structure is composed of microstructure units which are periodically arranged; the size of the maximum cross section of each microstructure unit ranges from 100 nm to 150 nm, the distance between the centers of the maximum cross sections of the adjacent microstructure units ranges from 800 nm to 1000 nm, and the size of each microstructure unit in the direction perpendicular to the surface of the silicon substrate ranges from 400 nm to 600 nm. Experimental results show that when incident light is vertically incident, the infrared transmittance of the material in a medium-wave infrared band of 3-5 microns is greater than or equal to 90%; and when the incident angle of incident light is 0-30 degrees, the infrared transmittance of the material in a medium-wave infrared band of 3-5 microns is still greater than or equal to 90%.

The application relates to the field of building energy saving, and particularly discloses a photovoltaic-electrochromic integrated toughened vacuum insulating glass intelligent outer facade component which comprises, from outside to inside, a first toughened glass substrate, a first PVB film, a cadmium telluride battery piece, a second PVB film, a second toughened glass substrate, a hollow layer, an EC electrochromic layer, a third toughened glass substrate, a vacuum cavity, a support column, an inner layer toughened glass substrate and a wiring module. The cadmium telluride battery piece is used for providing driving electric energy for the EC electrochromic layer, the vacuum cavity and the hollow layer form a double heat insulation structure, and the wiring module is used for realizing electric energy transmission and control signal access. The application realizes integrated integration of photovoltaic power generation, electrochromic light control and vacuum insulation functions, has the characteristics of good energy saving effect, high structural strength, excellent sealing performance and high intelligent degree, and is suitable for the field of building outer facades.

The application provides an infrared absorption material based on doping regulation, a preparation method and an infrared detector. By introducing selenium atoms to replace tellurium atoms in a sodium gallium telluride material, the material is doped according to a doping ratio of 1:4 to 1:2 of atomic weight, the energy band structure and optical properties of the material are regulated, a new infrared absorption material is obtained, and the light absorption performance of the material in the infrared wave band is significantly improved. According to the component characteristics of the infrared absorption material, a specific preparation scheme is provided, the preparation is completed by grinding, secondary melting and annealing treatment of the set principle mass of sodium single substance, gallium single substance, tellurium single substance and selenium single substance, and the band gap and absorption intensity are accurately adjusted, and the symmetry and crystal stability of the material are also considered.

The invention belongs to the technical field of solar cells, and particularly relates to a preparation method and application of a copper-doped cadmium telluride thin-film solar cell. The preparation method of the copper-doped cadmium telluride thin-film solar cell comprises the following steps: preparing a transparent conductive layer, a window layer, an absorption layer and a back contact layer on a transparent substrate in sequence, then soaking the transparent substrate in a copper salt solution, then preparing a back electrode layer on the side of the back contact layer, and carrying out annealing treatment. According to the invention, copper doping is realized based on a soaking method, and hole transport efficiency can be improved, energy band matching can be optimized and interface recombination loss can be reduced by controlling the concentration, the type and the soaking time of the copper salt solution, so that the solar cell has good open-circuit voltage, short-circuit current and filling factors, relatively high conversion efficiency can be realized, and the conversion efficiency can reach 19.62%. Meanwhile, the preparation process is simple and can be completed in the atmospheric environment, and compared with a traditional process, the annealing temperature is low, so that the preparation cost is low.

The invention belongs to the technical field of sodium-ion batteries, and particularly relates to an iron-manganese-based sodium-ion battery positive electrode material as well as a preparation method and application thereof. The preparation method of the iron-manganese-based sodium ion battery positive electrode material comprises the following steps: adding ferric nitrate and manganese nitrate into water for dissolving, performing spray pyrolysis to obtain an iron-manganese oxide precursor, performing ball-milling mixing on sodium carbonate, the iron-manganese oxide precursor and lanthanum telluride, and calcining in an inert gas atmosphere to obtain a composite material; and adding Ni4O4 cubic alkane modified carbazole, the composite material and manganese dioxide into dilute sulphuric acid for ultrasonic dispersion, stirring for reaction, centrifuging, washing and drying to obtain the iron-manganese-based sodium ion positive electrode material. The iron-manganese-based sodium ion battery positive electrode material provided by the invention has the advantages of stable rate cycle, high specific capacity and excellent capacity retention rate.

The invention belongs to the technical field of energy conservation and environmental protection, and discloses a cadmium telluride power generation glass and photovoltaic energy storage integrated agricultural greenhouse system. The assembly design module is used for dividing cadmium telluride power generation glass into N subunits, and a pi-type thermocouple is integrated on a back plate of each subunit; the crop detection module is used for acquiring and analyzing crop states through subunits and generating crop labels according to the crop states; according to the dynamic shading module, each subunit is connected with a thermoelectric module, the thermoelectric modules are directly connected with an electrochromic glass shading plate, and the fog state light transmittance of the shading plate is dynamically adjusted according to crop labels; according to the intelligent energy storage module, each subunit integrates a cadmium telluride power generation layer, a thermoelectric conversion layer and a super capacitor, and an intelligent charging and discharging strategy is generated according to the illumination intensity. The energy utilization module is used for obtaining a composite adjustment strategy according to the crop label and the energy storage level corresponding to the intelligent charging and discharging strategy; through the integrated design, collaborative optimization of the power generation efficiency, the energy utilization rate and the crop stress damage rate is achieved.

The application relates to the technical field of photovoltaic cells and discloses a tellurium cadmium selenide film near-space sublimation deposition method and equipment, wherein the tellurium cadmium selenide film near-space sublimation deposition method comprises the following steps: a cadmium selenide heating chamber is used to heat cadmium selenide raw materials, a first gaseous reaction precursor is obtained, the heating temperature is T1, a cadmium telluride heating chamber is used to heat cadmium telluride raw materials, a second gaseous reaction precursor is obtained, the heating temperature is T2, T1>T2 is met, the first gaseous reaction precursor is introduced into a mixing chamber through a first gas outlet pipe, the second gaseous reaction precursor is introduced into the mixing chamber through a second gas outlet pipe, mixed gas is obtained in the mixing chamber, the mixed gas is transported to a nozzle through a connecting pipe, and the nozzle is sprayed towards a substrate, so that a tellurium cadmium selenide film is formed on the surface of the substrate. The cadmium selenide and the cadmium telluride binary alloy are used for near-space sublimation deposition, the stability of the tellurium cadmium selenide film can be remarkably improved, and the photoelectric conversion efficiency of the cell is improved.

The invention discloses a cadmium telluride solar cell and a preparation method thereof. The cadmium telluride solar cell comprises a substrate, a TCO layer, a window layer, a cadmium telluride layer, an aluminum oxide passivation layer, a back contact layer and a back electrode layer which are arranged in sequence. The surface, rich in oxygen atoms, of the aluminum oxide passivation layer can effectively passivate dangling bonds and defect states on the surface of CdTe, so that the open-circuit voltage (Voc) and the fill factor (FF) of the cell are improved; the aluminum oxide passivation layer forms a high conduction band bottom barrier for electrons, so that the electrons can be effectively prevented from moving from CdTe to the back contact direction to improve Voc; and meanwhile, the interface state pinning effect can be reduced, so that better energy band bending can be formed.

Detectors for computed tomography scanners may include a cathode, a cadmium telluride material, a cadmium zinc telluride material, or a silicon material adjacent to the cathode, and an array of anodes located on a side of the cadmium telluride material, the cadmium zinc telluride material, or the silicon material opposite the cathode, A substrate may be located proximate to the array of anodes, anodes of the array of anodes electrically connected to the substrate. A microelectronic device may be located on a side of the substrate opposite the cadmium telluride material, the cadmium zinc telluride material or the silicon material. The microelectronic device may be electrically connected to the substrate with the microelectronic device mounted to the substrate in a flip-chip orientation. Electrically conductive elements may be located adjacent to the microelectronic device and electrically connected to the substrate.

The invention provides a mercury-cadmium-telluride material, a surface passivation heat treatment method thereof and an infrared detector, the surface passivation heat treatment method of the mercury-cadmium-telluride material comprises the following steps: S1, pretreating the surface of a mercury-cadmium-telluride substrate; s2, depositing and growing a high-component HgCdTe film layer on the surface of the tellurium-cadmium-mercury substrate; s3, depositing and growing a CdTe passive film layer on the surface of the high-component HgCdTe film layer; s4, depositing and growing a ZnS passive film layer on the surface of the CdTe passive film layer; and S5, carrying out passive heat treatment on the tellurium-cadmium-mercury substrate treated in the step S4 under the protection of an inert atmosphere. The three composite passivation film layers are adopted, and the high-component HgCdTe film layer and the HgCdTe substrate material are basically consistent in component, crystal structure and lattice constant, so that the problems that the CdTe film layer preparation process is high in requirement, CdTe / HgCdTe generates stress and dislocation and the like when the traditional CdTe passivation film layer is adopted as the first passivation material layer are solved; the process requirement of preparation of the CdTe passive film layer is reduced, the complexity of a heat treatment process is reduced, and the process window of HgCdTe device processing is widened.

The invention relates to the technical field of cadmium telluride power generation glass, in particular to a copper-doped back contact layer, a preparation method of the copper-doped back contact layer and cadmium telluride power generation glass. The preparation method of the copper-doped back contact layer comprises the following steps: firstly preparing the back contact layer, then preparing a copper paste dot matrix on the back contact layer, and finally carrying out two-stage heat treatment, the first-stage heat treatment temperature of the two-stage heat treatment is 180-220 DEG C, and the second-stage heat treatment temperature of the two-stage heat treatment is 250-300 DEG C. According to the preparation method, an intrinsic zinc telluride (i-ZnTe) buffer layer is introduced and combined with a dot-matrix copper doping technology, and a super-stable back contact structure which is gently transited in energy band, extremely low in interface recombination and strictly limited in Cu ions is constructed between the CdTe absorption layer and the metal back electrode, so that the cadmium telluride power generation glass which is higher in efficiency and longer in service life is prepared.

The invention discloses a preparation method and application of a cerium-doped CoTeO3 nano-cluster catalyst, and belongs to the technical field of chemical energy materials. The preparation process comprises the following steps: firstly preparing a metal salt solution and a NaHTe solution, dropwise adding the NaHTe solution into the metal salt solution, stirring, centrifuging, cleaning and drying to obtain the cerium-doped CoTeO3 nano-cluster catalyst. The cerium-doped CoTeO3 nano-cluster catalyst prepared by the invention is constructed by a chemical reduction method, the conductivity of the catalyst is remarkably enhanced by introducing transition metal telluride, and the electronic structure of active sites is further optimized by doping rare earth cerium. In an electrocatalytic oxygen evolution reaction (OER), the catalyst breaks through the energy barrier limitation of a catalytic reaction intermediate by introducing a lattice oxygen oxidation mechanism (LOM), shows excellent catalytic activity and stability, and shows a good industrial application prospect.

This invention discloses a cadmium telluride thin-film solar cell with a cadmium oxide passivation layer and its preparation method, including the following steps: (1) Pretreatment: The cadmium telluride thin film covered by the cadmium oxide layer formed by CdCl2 annealing is placed in a vacuum tube furnace, and the vacuum is drawn to a negative pressure state to remove residual O2; (2) Reduction treatment: The vacuum pump is turned off, an inert gas is introduced, the temperature is raised to the reduction reaction temperature and kept at the temperature, and then a mixture of reducing gas and inert gas is introduced under positive pressure to carry out the reduction reaction; the reduction reaction temperature is 200~400℃; the ratio of reducing gas to inert gas mixture is 1-20%; the reaction time is 5-30min; (3) Posttreatment: The heating is turned off, an inert gas is introduced to cool to room temperature to form a cadmium oxide layer covered by a metal Cd layer.

The application discloses a silver-free high-temperature lubricating coating and a preparation method and application thereof, and comprises the following steps: S1: stirring and mixing an aluminum source, a magnesium source, a chromium source and a phosphoric acid aqueous solution to obtain a mixed solution; S2: mixing the mixed solution with a tellurium source, a molybdenum source and a cobalt source, and obtaining a silver-free high-temperature lubricating coating after ball milling; and coating the silver-free high-temperature lubricating coating on a base material, and obtaining a silver-free high-temperature lubricating coating after solidification. The application provides the high-temperature lubricating coating which is applied to high-temperature alloy fasteners and adopts a telluride to replace silver as a high-temperature lubricating material, and the high-temperature lubricating coating has better high-temperature resistance and stronger stability compared with other coatings; the telluride can maintain the original structure and performance under 600-800 DEG C.

The invention relates to the technical field of preparation of high-purity inorganic nano materials, and discloses a controllable preparation method of a high-purity cadmium telluride nanocrystal, which comprises the following steps: pre-dissolving a conjugated acid salt in a water-phase reaction system, and reacting a cadmium salt precursor with a tellurium source precursor when ammonia gas is introduced as an inorganic gaseous ligand; a pH buffer system is constructed by ammonia gas and conjugated acid salt, and transient stability is provided for the generated cadmium telluride nanocrystals within the pH range for inhibiting the cadmium hydroxide impure phase; according to the method disclosed by the invention, an in-situ pH buffer system is constructed, so that a ligand stabilization function of the ammonia gas is decoupled from an alkaline side reaction phase of the ammonia gas, agglomeration is prevented while an impure phase is inhibited, the ligand and the salt are thoroughly removed after the reaction, and the technical problem that controllability and high purity cannot be obtained at the same time in an inorganic aqueous phase method is solved.

Three-dimensional and quick radiation detection via cadmium-zinc-telluride (CZT) detectors enable intraoperative / intrasurgical imaging and guidance with respect to radioactive objects detected within a patient body. Multiple CZT detectors are located around the patient body. An image reconstruction can be performed based on 3D-sensitive detections by the multiple CZT detectors to detect (e.g., and triangulate) a radioactive object within the patient body. Using a detected location of the radioactive object, a virtual representation of the radioactive object is provided in an extended reality (XR) experience that captures the patient body. A user wearing an XR headset may be provided with the XR experience while interacting with the patient body, for example, during a surgery.

The utility model discloses a novel photovoltaic support system which comprises a bottom support fixed on a horizontal plane, an inclined support is arranged on a bottom support frame, the inclined support frame is fixedly installed on the bottom support frame, a photovoltaic assembly is fixedly connected on the inclined support frame, and concrete blocks are arranged on the bottom support frame. According to the novel photovoltaic support system provided by the utility model, fixed installation is carried out by using the gravity of the photovoltaic assembly and the wind pressure effect, so that installation materials are saved and the system is more economical; the waterproof performance of the house is not damaged, and the attractiveness is improved through the combination of the photovoltaic module and the cadmium telluride film; the adjustable steel structure enables the inclined support to convert wind pressure into downward pressure so that the inclined support can be firmly fixed to the roof, use is guaranteed, and the disaster resistance performance is good. The support system not only can be applied to roofs, but also can be applied to the ground, and is widely used.

The invention relates to the technical field of power generation glass, and discloses VO2 cadmium telluride composite intelligent power generation glass and a preparation method thereof. The power generation glass comprises a transparent glass substrate; the FTO front electrode layer is deposited on the glass substrate; the VO2 nano dot array is formed on the FTO front electrode layer; the CdSe window layer is deposited on the VO2 nano dot array; the CdTe absorption layer is deposited on the CdSe window layer, and the CdTe absorption layer is etched to form a suede structure; the ZnTe: Ag: Cu back contact layer is deposited on the CdTe absorption layer; the ITO or metal back electrode layer is deposited on the back contact layer; the VO2 cadmium telluride composite intelligent power generation glass is divided into sub-cell units through laser etching. Based on the working principle of a CdTe solar cell and the application of a VO2 material, the technical bottleneck of the photovoltaic glass in the fields of dynamic dimming and high-temperature efficiency maintenance is solved through the intelligent phase change of the VO2 nanodot array and CdTe energy band engineering, and a standardized solution is provided for a next-generation intelligent photovoltaic device.

This invention provides a near-space sublimation method for preparing cadmium telluride thin films containing a cadmium zinc telluride (CdZnTe) buffer layer. This method addresses the quality issues of existing cadmium telluride epitaxial films by using CdZnTe polycrystalline material as the growth source for the buffer layer, followed by the growth of the cadmium telluride epitaxial film on the buffer layer. First, the near-space sublimation furnace growth process parameters are set, and the pretreated CdZnTe polycrystalline growth source and GaAs substrate are placed into the near-space sublimation furnace to grow a 5-15 μm CdZnTe buffer layer on the GaAs substrate. Second, the CdZnTe polycrystalline growth source and the GaAs substrate with the grown buffer layer are removed from the near-space sublimation furnace cavity, and the growth process is repeated using a cadmium telluride growth source to prepare a cadmium telluride epitaxial film with a thickness of 300-400 μm.

The application discloses a kind of dimming cadmium telluride power generation glass and preparation method thereof, belong to adjustable light photovoltaic module production technical field.The preparation method includes: on FTO conductive substrate, CdSe / CdTe power generation layer and ZnTe doped composite back contact / complex back electrode layer are prepared in sequence, single time perforating is carried out using laser, the discrete micropore array with aperture 1 μm~5 μm, hole spacing 5 μm~15 μm, optical opening rate 10%~60% is formed, then solid-state electrolyte layer, electrochromic layer and transparent top electrode are deposited, and the product is obtained by laser scribing electrode isolation and glass packaging.Product is divided into high efficiency HP, balanced type ST and high light HT three series according to opening rate.The application realizes the effect of light path self-alignment, process simplification and no moire interference, and the power generation efficiency loss is small, the light transmittance and power generation efficiency matching can be flexibly customized, suitable for building photovoltaic integrated scene, with high efficiency power generation, dynamic dimming and excellent visual effect.

The invention provides a radiation detection element, a radiation detector, and a method for manufacturing the radiation detection element capable of performing energy measurement of radiation with good precision. A radiation detection element includes: a compound semiconductor crystal substrate formed of zinc cadmium telluride to which indium is added as an impurity; and a metal electrode that is provided on the surface of the compound semiconductor crystal substrate. The energy resolution of the metal electrode with respect to 122 keV gamma rays emitted from 57 Co is 7% or less.

The application provides a kind of heteroatom doped honeycomb carbon covalent coupling cobalt / cobalt telluride heterojunction nanocomposite, preparation method and application, with such characteristics, preparation method includes the following steps: step S1, citrate and nitrogen-containing small molecule are dissolved and mixed, through evaporation, carbonization, etching, obtain heteroatom doped honeycomb carbon;Step S2, heteroatom doped honeycomb carbon is dissolved in mixed solvent and stirred evenly, then the above-mentioned solution stirred evenly is added with organic ligand to react, after reaction, metal organic framework / heteroatom doped honeycomb carbon nanocomposite is obtained;Step S3, metal organic framework / heteroatom doped honeycomb carbon nanocomposite is placed into porcelain boat, is transferred to the downstream of tubular furnace, and tellurium powder is placed in the upstream of tubular furnace, calcination is carried out under inert gas atmosphere, and heteroatom doped honeycomb carbon covalent coupling cobalt / cobalt telluride heterojunction nanocomposite is obtained.

The utility model relates to the technical field of cadmium telluride assembly testing, and discloses a cadmium telluride assembly automatic accurate positioning testing tool which comprises a linear sliding rail, the top end of the linear sliding rail is connected with a moving plate in a sliding mode, one end of the moving plate is fixedly connected with a manual fixing handle, and a side sliding rail, a side sliding plate and an L-shaped supporting plate are arranged, so that the moving plate is fixed to the linear sliding rail in a sliding mode. The L-shaped supporting plate is moved according to the size of a to-be-detected object, the to-be-detected object can be conveniently placed at the upper end of the L-shaped supporting plate for subsequent clamping and fixing, the testing environment is more stable, the detection precision is higher, a linear sliding rail, a movable sliding plate and a manual fixing handle are arranged, the movable sliding plate can be moved to the middle through the manual fixing handle, and the detection efficiency is improved. By arranging the air cylinder, the push plate, the clamping plate, the buffer pad and the detection copper pole piece, when the tested assembly needs to be tested, the air cylinder is utilized to drive the test tool to enable the push plate to drive the clamping plate to perform accurate detection, the buffer pad can prevent impact force from damaging a to-be-tested object, and test data are more stable.

The invention relates to the technical field of scattered metal recovery, in particular to a method for separating and recovering tellurium dioxide in cuprous telluride compound waste, which comprises the following steps: step 1, pretreatment and oxidizing roasting: crushing and grinding the cuprous telluride compound waste, and sieving with a 200-mesh sieve to obtain waste powder; the waste powder is placed in a roasting furnace, oxidizing roasting is carried out in the air atmosphere, the roasting temperature is controlled to be 550-650 DEG C, the roasting time is 2-3 h, and a roasted product is obtained.According to the method, according to the characteristics of the cuprous telluride compound waste, cuprous telluride is converted into tellurium dioxide and copper oxide which are easy to leach out through oxidizing roasting; and then primary separation of tellurium and heavy metal impurities is achieved through normal-pressure alkaline leaching, a high-quality tellurium dioxide product is obtained through acidification tellurium precipitation and refining purification subsequently, and the problem that in the prior art, the separation difficulty of tellurium and impurities is large is effectively solved.

The application provides a dual-gate regulated two-dimensional heterostructure telluride infrared detector, which is characterized in that: a silicon photonic crystal cavity and a first air groove are arranged on an SOI substrate, and are separated into a first mesa and a second mesa arranged along a width direction; a dielectric layer is arranged above the silicon photonic crystal cavity, a first two-dimensional bipolar material layer is arranged above the dielectric layer of the first mesa, and a second two-dimensional bipolar material layer is arranged above the dielectric layer of the second mesa; the first two-dimensional bipolar material layer and the second two-dimensional bipolar material layer are stacked above the first air groove to form a Van der Waals heterojunction region; a drain electrode is prepared on the first two-dimensional bipolar material layer, and a source electrode is prepared on the second two-dimensional bipolar material layer; a first gate electrode is further prepared on the first mesa, and a second gate electrode is further prepared on the second mesa; the Van der Waals heterojunction region can be reversibly switched between a PN junction and an NP junction by respectively adjusting gate voltages of the first gate electrode and the second gate electrode.