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366 results about "Telluride" patented technology

The telluride ion is the anion Te²⁻ and its derivatives. It is analogous to the other chalcogenide anions, the lighter O²⁻, S²⁻, and Se²⁻, and the heavier Po²⁻. The telluride anion is formed from the reduction of tellurium (Te) metalloid. The redox potential of pure Te metal is fairly negative, −1.14 V.

Preparation method of active radical with surface-enhanced Raman scattering (SERS) effect

The invention provides a preparation method of an active radical with a surface-enhanced Raman scattering (SERS) effect, belongs to the technical field of spectrum detection, and relates to the preparation technology of the SERS active radical, which is rapid, has high sensitivity and performs a low trace detection function. The preparation method is characterized in that firstly, a nano porous silicon columnar array with a large specific surface area is prepared by utilizing a hydrothermal etching technology; afterwards, a nanowire structure of an II-VI group compound semiconductor (such as zinc oxide, titanium dioxide, cadmium sulfide, cadmium selenide, cadmium telluride, and the like) by utilizing a chemical vapor deposition method; and finally, nano particles of precious metal (such as gold, silver, copper and the like) are finally prepared on the nanowire structure by using a chemical reduction method, so as to obtain an active radical material. The preparation method has a wide application prospect in the aspects of clinical biomolecular fast recognition, trace chemical substance detection, biological sample analysis, and the like. The preparation method has the advantages that the preparation process of each material is simple, the condition is mild and the repetition rate reaches 100 percent.
Owner:BEIJING UNIV OF CHEM TECH

Method for preparing nanometer copper-sulfur compounds with controllable morphologies based on chemical vapor deposition method

The invention belongs to the technical field of the preparation of the semiconductor material and particularly discloses a method for preparing copper-sulfur compound nano-crystals with controllable morphology based on a chemical vapor deposition method. The method adopts the chemical vapor deposition method, the temperature and pressure of the reaction system and the product collection area are controlled to prepare different morphologies of copper-sulfur compounds such as copper sulfide nano-crystals, copper sulfide nano-rods, copper sulfide nano-sheets and copper sulfide nano-flower-cluster. The method comprises the following specific steps: (1) injecting a solid precursor; (2) controlling the pressure and temperature of the system and injecting a gaseous precursor; and (3) collecting the product. The copper-sulfur compounds prepared by the method are characterized by good monodispersity, high sample purity and the like. The method can also be used to prepare other metal semiconductors such as sulfides, selenides and tellurides; and by changing the reaction conditions of the system, the morphology of the product is regulated and then applied in fields such as the preparation of functional semiconductor elements, photoelectric conversion and catalysis.
Owner:FUDAN UNIV

Method for electrochemical preparation of cadmium telluride semiconductor film under alkaline water phase condition

The invention relates to the technical field of cadmium telluride semiconductor film preparation, and relates to a method for electrochemical preparation of a cadmium telluride semiconductor film under an alkaline water phase condition; a three-electrode electrochemical deposition system is adopted; a CdTe film is electrochemically deposited on a deposition substrate from an alkaline precursor deposition solution at a temperature of 20 DEG C-80 DEG C and a cathodic deposition potential of from -1.0 V to -2.0 V; and the crystallization quality of the film is improved by performing annealing treatment of the deposited CdTe film. A high cathodic potential is adopted to avoid the problem of cracking caused by film polycondensation of amorphous CdTe during later thermal crystallisation treatment, wherein the amorphous CdTe is formed at a low cathodic potential; a weak alkaline solution is adopted to reduce the corrosion of the deposition substrate by the electrolyte solution; the H+ ion concentration of the weak alkaline solution is low, and thus less H2 gas is generated during the electrodeposition process, which avoids the problem of acicular pores caused by hydrogen generation during the deposition process, and greatly improves the film density and photoelectric properties.
Owner:UNIV OF JINAN

Platinum telluride two-dimensional material as well as preparation thereof and application thereof in electrical devices

The invention belongs to the field of nano material preparation, and in particular discloses a platinum telluride two-dimensional material, i.e., platinum telluride nanosheets. The invention also provides a preparation method of the platinum telluride two-dimensional material; the method comprises the steps of enabling tellurium powder and platinum powder to be volatilized at a temperature not lower than 410 DEG C and a temperature of 1000-1170 DEG C respectively, and enabling the volatilized tellurium and platinum to be deposited on the surface of a substrate by means of chemical vapor deposition under the conditions that the carrier gas flow is 50-400sccm and the temperature is 350-720 DEG C so as to obtain the platinum telluride nanosheets. The invention also relates to the platinum telluride two-dimensional material prepared by the method, optical devices prepared from the platinum telluride two-dimensional material, and especially comprises application of the platinum telluride two-dimensional material in PtTe2 field effect transistors. The platinum telluride nanosheets are good in morphology and are hexagonal and triangular, have thicknesses of 2-40nm and sizes of 1.5-52mu m,and are good in crystallinity; the preparation method is simple and easy to implement.
Owner:HUNAN UNIV

Universal preparation method for synthesizing carbon-coated nickel metal compound with various morphologies

The invention relates to a universal preparation method for synthesizing a carbon-coated nickel metal compound with various morphologies as a sodium ion battery negative electrode material by utilizing a metal organic framework design. The method comprises the following steps: dissolving an organic ligand, a nickel source and a surface dispersant into a mixed solvent according to a certain ratio,and controlling hydrothermal reaction time to generate nickel-containing metal organic frameworks with different morphologies (solid spheres, core-shell spheres and hollow spheres); the carbon-coatednickel-containing compounds (nickel oxide, nickel phosphide, nickel sulfide, nickel selenide and nickel telluride) with the shape similar to that of a template are synthesized by taking the frameworksas the template and adjusting an anionic ligand and utilizing an ion exchange strategy. The preparation method has the advantages that the morphology is adjustable; the components are rich; conditions are easy to control; the operation is simple; the conversion efficiency is high; the synthesis method has universality and can be expanded to synthesis of other types of carbon-coated metal compounds; and the product has high specific capacity and good rate capability.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY

Method for detecting content of chlortoluron in farmland water by using fluorescence carbon point and cadmium telluride quantum dot energy transferring technology

InactiveCN103901007AAccurate, convenient and fast detectionSimple methodFluorescence/phosphorescenceFluorescent lightFluorescent quenching
The invention discloses a method for detecting the content of chlortoluron in farmland water by using a fluorescence carbon point and cadmium telluride quantum dot energy transferring technology. According to the method, a fluorescence carbon point is used as an energy transferring donor and a cadmium telluride quantum dot is used as an acceptor to form an energy transferring system with stable performance; the fluorescence carbon point is used for transferring energy to the cadmium telluride quantum dot so as to cause fluorescence enhancement of the cadmium telluride quantum dot. The chlortoluron is added and electrons on the surface of the cadmium telluride quantum dot are transferred to the chlortoluron to be in non-radiation combination with the chlortoluron, so that the fluorescent light of the cadmium telluride quantum dot is regularly quenched. The concentration of the chlortoluron has a good linear relation with a fluorescence quenching degree (F0 / F) in a range of 0.05-12.0 micrograms / liter; a linear regression equation is F0 / F=1.0+0.138c and the linearly dependent coefficient r is equal to 0.9979; the detection limit of the method is 0.017 microgram / liter. The method disclosed by the invention is simple, high in sensitivity and good in selectivity; the detection of the chlortoluron in a farmland water sample is very convenient and rapid.
Owner:GUILIN UNIVERSITY OF TECHNOLOGY

Method for preparing bifluorescence emission nano-probes in post-encoding mode

The invention discloses a method for preparing bifluorescence emission nano-probes in a post-encoding mode. A fluorescent probe precursor which can be used for post-encoding is synthesized by taking cadmium telluride quantum dots and gold nanoclusters as fluorescence encoding elements and silicon balls as a carrier of the encoding elements according to the fluorescent characteristics of the quantum dots and the gold nanoclusters; and then an optical regulator is added into the precursor in a post-encoding mode to prepare the bifluorescence emission nano-probes. The fluorescence intensity ratio of two encoding elements in the obtained bifluorescence emission nano-probes is relatively large, so that the observation on the change of a fluorescent signal at relatively high resolution is facilitated. The method for preparing the bifluorescence emission nano-probes comprises the following steps of: preparing the quantum dots, wrapping silicon on the quantum dots, synthesizing the gold nanoclusters, synthesizing fluorescent probe precursor microspheres, and preparing the bifluorescence emission nano-probes. The invention has the advantages that the synthetic method is simple; the encoded probes have the irreversibility; the reproducibility of different batches of probes is high; and an effective method for preparing a large number of bifluorescence emission nano-probes which can be used for fluorescent imaging is provided.
Owner:NANKAI UNIV

Cadmium telluride quantum dot grafted graphene-carbon nanotube composite thin film optical switch material and preparation thereof

The invention discloses a cadmium telluride quantum dot grafted graphene-carbon nanotube composite thin film optical switch material and a preparation method thereof. The optical switch material consists of a graphene-carbon nanotube composite thin film with negative charges, diallyldimethylammonium chloride with positive charges and cadmium telluride quantum dots with negative charges, wherein the graphene-carbon nanotube composite thin film is used as a substrate; the diallyldimethylammonium chloride is electrostatically self-assembled on the substrate; and the diameters of the cadmium telluride quantum dots are in the range of 4 to 6nm. The preparation method disclosed by the invention has a simple process. The quantum dots of the obtained cadmium telluride quantum dot grafted graphene-carbon nanotube composite thin film optical switch material are uniformly dispersed on the film. The obtained cadmium telluride quantum dot grafted graphene-carbon nanotube composite thin film optical switch material has good environmental suitability and stable performance, has the advantages of optical and electric performances capable of being regulated and controlled by changing the type of the quantum dots and the amount of the quantum dots of a load, high photoelectric conversion rate, and the like, and is expected to be used for preparing a photoelectric conversion device with rapid photoresponse performance.
Owner:TIANJIN UNIV

Efficient cadmium telluride nanocrystalline Schottky junction solar cell with modified anode interface and preparing method thereof

The invention discloses an efficient cadmium telluride nanocrystalline Schottky junction solar cell with a modified anode interface and a preparing method of the solar cell. The solar cell is formed by stacking a glass substrate, an anode, an anode interface layer, an optical activity layer and a cathode in sequence. The anode interface layer is added between the anode and the active layer so that anode work function control can be performed, and the anode interface layer is made from Au or MoOX or C60. Anode interface material has high work function. The anode interface material is deposited on an anode substrate in a vacuum evaporation mode or dissolved in organic solvent to prepare solution, and finally, the anode interface layer is formed on the anode substrate. The energy conversion efficiency of the cadmium telluride nanocrystalline Schottky junction solar cell can be obviously improved, the curling phenomenon of an I-V curve is avoided to some extent, the characteristic of a diode is enhanced, and the service life of devices is prolonged. According to the efficient cadmium telluride nanocrystalline Schottky junction solar cell with the modified anode interface and the preparing method of the solar cell, the preparing technology is simple, the main preparing process can be completed in a common fume hood through solution, and the manufacturing cost is greatly reduced.
Owner:SOUTH CHINA UNIV OF TECH

Preparation method of high-purity cadmium telluride

The invention provides a preparation method of cadmium telluride. The preparation method comprises the following steps: mixing tellurium and cadmium according to a specified molar ratio, wherein tellurium is excessive relative to cadmium; putting the mixed mixture of tellurium and cadmium into a crucible boat; putting the crucible boat into a quartz tube, vacuumizing, and sealing the quartz tube;putting the sealed quartz tube into a horizontal directional solidification furnace, and carrying out heating and heat preservation in a multi-section heating mode to enable tellurium and cadmium to react; after the reaction is finished, cooling the crucible boat, the quartz tube and the material in the tube to normal temperature, cutting the quartz tube open, taking cadmium telluride obtained through the synthetic reaction out, wherein the purity of the obtained cadmium telluride is 6N. According to the preparation method of cadmium telluride provided by the invention, firstly, the metal cadmium and tellurium are independently treated, so that no large vapor pressure is generated in the production process, and the possibility of pipe explosion in the production process is effectively prevented. Meanwhile, horizontal synthesis and horizontal directional solidification are combined to form one-step preparation of 6N and above high-purity cadmium telluride.
Owner:XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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