338 results about "Telluride" patented technology

The invention discloses a far-infrared band optical thin film, a preparation method thereof and an optical element, and relates to a far-infrared band optical thin film technology, the far-infrared band optical thin film comprises a substrate, a front band-pass film system and a back cut-off film system; wherein the front band-pass film system is located on one side of the substrate, and the back cut-off film system is located on the other side of the substrate; the far infrared band optical thin film is prepared by alternately depositing lead telluride serving as a high-refractive-index thin film material and cadmium telluride serving as a low-refractive-index thin film material. The far infrared band optical thin film can cut off the band with the wavelength smaller than 4 microns, and the average transmittance is 0.23%; anti-reflection is carried out at the wave band of 5-50 microns; the moisture-resistant performance is excellent.

The tellurium-cadmium-mercury double-layer component heterogeneous planar junction detector comprises a substrate material layer, an n-type absorption layer, a surface n-type wide band gap heterogeneous layer, a passivation layer and a contact electrode layer which are arranged in a stacked mode. The surface n-type wide band gap heterogeneous layer is a wide band gap heterogeneous layer prepared on the surface of the n-type absorption layer based on a mercury-rich vertical liquid phase epitaxy technology, and the residual impurities are n-type; the passivation layer covers at least partial areas of the isolation region and the p-type injection region in the orthographic projection direction, and the part, not covering the p-type injection region, of the passivation layer is a contact hole; the contact electrode layer is in contact with the p-type injection region, and the orthographic projection area of a contact electrode is larger than and covers the contact hole. According to the invention, interface mutual diffusion is realized in the growth process of the n-type wide bandgap heterogeneous layer, and the mercury cadmium telluride p-on-n planar heterojunction device is realized through As ion implantation. Tunneling current and surface electric leakage can be effectively suppressed, dark current can be reduced, and device performance can be improved.

A method of manufacturing a CdTe-based thin film solar cell device having a graded refractive index profile within a CdTe (cadmium telluride)-based absorber layer, comprising the steps of: a) providing a transparent substrate comprising a front electrode, b) forming a doped CdTe-based absorber layer on the substrate, c) performing an activation treatment after step b). The doped CdTe-based absorber layer in step b) is a doped CdTe-based absorber layer stack comprising a first layer and a second layer. The first layer is a first doping element-containing layer including vanadium as a first doping element, which is formed by depositing a first doping element-enriched layer followed by depositing a CdSe (cadmium selenide) layer or a CdSeTe (cadmium selenium telluride) layer, or by depositing a CdSe layer or a CdSeTe layer each doped with a first doping element. The second layer is formed by depositing a CdTe layer. The invention also relates to a CdTe-based thin-film solar cell device with gradient refractive index distribution.

The invention belongs to the technical field of biosensors, and provides a cadmium telluride quantum dot-based fluorescent biosensor for detecting tetracycline, which comprises a CdTe quantum dot, an Apt-T composite probe, M-2P, a C chain and an Ag-HP chain, the Apt-T composite probe is obtained by hybridizing Apt and a T chain; the M-2P is obtained by hybridizing an M chain and a P chain according to a molar ratio of 1: 2; the nucleotide sequences of Apt, T, M, P, C and HP are as shown in SEQ ID NO: 1-6. The sensor disclosed by the invention has the advantages of high detection speed, simplicity in operation, low price, low detection limit, high specificity and the like, can make up for the defects and deficiencies of the existing tetracycline detection method, and realizes rapid and accurate quantitative detection of tetracycline.

The invention relates to the technical field of analysis and detection, in particular to a fluorescent switch sensor based on quantum dot-nano porphyrin and application. The specific technical scheme is as follows: the fluorescent switch sensor is constructed by utilizing cadmium telluride quantum dots modified by mercaptosuccinic acid and a 5, 10, 15, 20-tetra (4-nitrophenyl) porphyrin nano material modified by a cationic surfactant hexadecyl trimethyl ammonium bromide. And the method has a good enrichment effect on zearalenone. The sensor has high sensitivity, high selectivity and anti-interference performance, can accurately analyze trace zearalenone in actual grain samples (corn, rice, soybean and the like), and has the advantages of simplicity in operation, low detection limit, high sensitivity, low cost and the like.

The invention discloses a group III chloride ex-situ doped cadmium telluride thin film solar cell and a preparation method thereof, and the cadmium telluride thin film solar cell comprises a substrate layer, a transparent conductive oxide thin film layer, a high-resistance buffer layer, a cell window layer, a cell layer, a back contact layer and a back electrode layer which are sequentially arranged from bottom to top. The cell layer comprises an absorption layer and a IIICl3 layer coated on the upper surface of the cell window layer, and IIICl3 is chloride of the III main group element. According to the III-group chloride ex-situ doping method provided by the invention, the III-group chloride can be dissolved in an organic solution, room-temperature solution deposition is allowed, III-group cations are easy to diffuse at a relatively low annealing temperature, and a complex annealing process is not needed to activate a dopant; through a simple solution process and low-temperature activation, efficient doping of the CdTe absorption layer is effectively realized, and the open-circuit voltage and the overall photoelectric conversion efficiency of the cell are remarkably improved.

The invention relates to a cadmium telluride solar cell and a preparation method thereof, the cadmium telluride solar cell comprises a TCO layer, a buffer layer, a window layer, a light absorption layer, a back electrode layer and a back contact layer, the back contact layer is located between the light absorption layer and the back electrode layer, and the back contact layer is made of boron or carbon doped transition metal nitride. The back contact layer made of boron or carbon doped transition metal nitride is introduced between the light absorption layer and the back electrode layer, and transition gold elements in the back contact layer can be compatible with the cadmium telluride absorption layer, so that the obstruction of a contact barrier to hole transport is reduced, the interface characteristic between the CdTe absorption layer and the back contact layer is optimized, and the light emitting efficiency is improved. According to the present invention, the cadmium telluride absorption layer can form the good ohmic contact with the cadmium telluride absorption layer, such that the effect of the back field buffer layer can be provided so as to reflect the photo-induced electrons on the back surface in the cadmium telluride to the PN junction, such that the recombination of the electrons on the back surface can be substantially reduced, and the carrier collection efficiency of the cell can be improved so as to improve the open-circuit voltage and the conversion efficiency of the cell;

The invention relates to the technical field of cadmium telluride power generation glass manufacturing, in particular to a surface treatment method of a cadmium telluride absorption layer, cadmium telluride power generation glass and a manufacturing method. An oxide layer on the surface of a cadmium telluride absorption layer is etched by laser, so that the cadmium telluride absorption layer forms a pyramid-shaped suede structure, and the height of the suede structure is 5-80 nm. The oxide layer on the surface of the cadmium telluride absorption layer is etched by laser, a light trapping structure is formed, light absorption is improved, high-quality ohmic contact between the light absorption layer and the back contact layer is improved, series resistance is reduced, short-circuit current is improved, and therefore the performance of the cadmium telluride power generation glass is improved.

The invention relates to the field of thermoelectric semiconductor materials, and provides a method for improving the thermoelectric performance of a P-type extruded bismuth telluride-based material in order to solve the problems that the performance of a P-type material prepared through an optimized extrusion method is complex and the requirement for a device is high, the method comprises the following steps that (1) the bismuth telluride-based material is smashed into powder, and the particle size range of the powder is D50gt; 150 [mu] m, D90lt; 2000 [mu] m; and (2) carrying out compression molding, sintering, hot extrusion and annealing on the powder to obtain the P-type extruded bismuth telluride-based material. According to the method, the particle size of the powder before extrusion is controlled within a reasonable range, and the comprehensive performance of lattice thermal conductivity and mobility of the bismuth telluride-based material after extrusion is optimal, so that the thermoelectric performance of the extruded material is improved.

The invention belongs to the technical field of seedling cultivation, and discloses a cadmium telluride power generation glass three-dimensional multilayer seedling raising greenhouse and an illumination regulation and control system. Comprising a layered illumination sensing module which constructs an interlayer illumination distribution map and an interlayer illumination profile map based on the photosynthetically active radiation density of each seedling raising layer; the light-requiring threshold generation module is used for generating a target illumination intensity upper and lower limit curve of each seedling raising layer based on seedling raising crop types, growth stages and environmental parameters; the illumination comprehensive judgment module is used for identifying seedling raising layers with insufficient illumination or excessive illumination based on the interlayer illumination distribution map and a target illumination intensity upper and lower limit curve, and generating a dimming priority sequence in combination with the interlayer illumination profile map; the illumination intelligent control module is used for generating and executing a distributed dimming instruction set by combining the dimming priority sequence based on the output power of the cadmium telluride power generation glass and the consumed power of the seedling raising greenhouse; according to the invention, distributed self-adaptive light supplement is realized in the seedling raising process in the cadmium telluride power generation glass seedling raising greenhouse.

The invention discloses a laser etching dust extraction flight following system and a control method, and relates to the technical field of thin film solar cell manufacturing. The following system comprises a focusing dust extraction module, a following driving module, a cooperative control unit and a negative pressure dynamic adjusting module. The cooperative control unit comprises a following PLC controller and a motion control card, the following PLC controller synchronously obtains path planning information from a galvanometer flight system of a laser beam and generates a displacement instruction, and the displacement instruction is sent to a following driving module through the motion control card; and the following driving module and a galvanometer scanning module of the galvanometer flight system are synchronously triggered, and the following driving module moves according to the displacement instruction and controls the center of the dust extraction cover body and the etching point of the laser beam to coaxially move in a following manner. The method is low in dust removal efficiency and series resistance, good in parameter stability, low in equipment maintenance cost and suitable for processing large-size thin film batteries such as perovskite and cadmium telluride.

The invention relates to a niobium telluride terahertz photoelectric detector based on logarithmic composite antenna integration and a preparation method thereof, which are characterized in that a niobium telluride material obtained by mechanical stripping is transferred to an intrinsic high-resistance silicon substrate through a dry method, and a source electrode, a drain electrode and a corresponding antenna structure are manufactured by using an ultraviolet lithography technology. And the logarithmic composite antenna niobium telluride terahertz photoelectric detector is prepared by using processes such as electron beam evaporation and the like. Compared with a traditional logarithmic antenna, the logarithmic composite antenna structure has higher field intensity gain on terahertz waves, so that the logarithmic composite antenna niobium telluride terahertz photoelectric detector has higher sensitivity on the terahertz waves.

The invention discloses a combined cadmium telluride photoelectric curtain wall structure and a construction method thereof, relates to the technical field of wastewater treatment, and aims to solve the technical problem that a current combined cadmium telluride photoelectric curtain wall is easily influenced by the natural environment. Comprising a plurality of mounting parts, a mounting frame mechanism fixed on the mounting parts and a same-color frame arranged on the front surface of the mounting frame mechanism; the mounting frame mechanism comprises a side vertical beam, a middle vertical beam, a first cross beam and a second cross beam, the first cross beam and the second cross beam are mounted between the side vertical beam and the middle vertical beam, and the same-color frame comprises a side barrier strip, an upper barrier strip, a lower barrier strip and a middle barrier strip which are used for shielding the mounting frame mechanism. The photovoltaic module has the advantages that dust adhesion is reduced through the design of the air cavity and the air port, the arc-shaped barrier strip and the water tank rapidly drain water, the rectangular-ambulatory-plane sealing groove is matched with the sealant for multiple protection, the Sudoku structure is stably installed, the same-color frame gives consideration to decoration and circuit protection, the influence of the natural environment is effectively resisted, the photoelectric conversion efficiency is maintained, the waterproofness is improved, and the service life is prolonged.

The invention discloses medium-entropy metal telluride and a preparation method and application thereof.The preparation method comprises the specific steps that metal salt and fumaric acid are in an N, N-dimethylformamide solvent environment, metal ions and carboxyl are made to make full contact and coordinate, and a metal-organic complex precursor solution is constructed; reacting the precursor solution at a specific temperature to form an ordered crystal structure, namely Fe2 (CoNi)-MOF, in molecules and among the molecules of the metal-organic complex through a complex chemical rearrangement and bonding process; fe2 (CoNi)-MOF and tellurium powder are subjected to a series of synergistic reactions under high-temperature calcination of H2 / Ar mixed gas, and the medium-entropy metal telluride is generated. The medium-entropy metal telluride prepared by the invention has efficient catalytic hydrogen evolution and oxygen evolution potential in a water electrolysis hydrogen production reaction, can greatly improve catalytic efficiency and reaction dynamic characteristics, and is used for preparing a water electrolysis hydrogen production catalyst.

The invention relates to a preparation process of nano bismuth telluride, and belongs to the technical field of preparation of nano bismuth telluride, and the preparation process comprises the following steps: preparing a bismuth-based metal organic framework; carrying out coordination conversion on tellurate; calcining to remove organic conversion; and synthesizing bismuth telluride by a solvothermal method. The hexagonal flaky bismuth telluride with the average particle size of 200-300nm and reasonable particle size step-by-step is prepared through metal organic framework templating synthesis, the thermoelectric performance of the hexagonal flaky bismuth telluride is far better than that of a common bismuth telluride material, and the morphology and the particle size of the bismuth telluride are accurately controlled through metal organic framework templating accurate control so as to improve the thermoelectric performance of the bismuth telluride.

The invention discloses a tellurium-doped carbon quantum dot and a preparation method and application thereof, the tellurium-doped carbon quantum dot is obtained by using 2, 2 '-diaminodiphenyl telluride as a precursor, the average particle size is 1.9 nm, the thickness is about 2.1 nm, and the surface is rich in amino groups. And fixing (4-carboxybutyl) triphenylphosphonium bromide, 3-morpholinopropionic acid or 3-((4-methylphenyl) sulfonamide) propionic acid on the surfaces of the tellurium-doped carbon quantum dots to prepare Mito-Te-CDs, Lyso-Te-CDs and ER-Te-CDs with an organelle targeting function. The Mito-Te-CDs, the Lyso-Te-CDs and the ER-Te-CDs are good in biocompatibility, can be used as fluorescent probes for targeted imaging of organelles, can be used for recognition and removal of superoxide anions in specific organelles, have a protection effect on cells and can be used for effectively treating acute kidney injury.

The invention provides a preparation method of a tellurium-selenium-cadmium alloy film, which comprises the following steps: A) mixing cadmium selenide powder and cadmium telluride powder, and performing compression molding to obtain a powder source; b) pre-oxidizing the powder source in an oxygen-containing atmosphere to obtain a pre-oxidized powder source; in the oxygen-containing atmosphere, the molar percentage of oxygen is 1-40%; and C) preparing the tellurium-selenium-cadmium alloy film from the pre-oxidized powder source through a near-space sublimation method. The preparation method solves the problem that the selenium content in the tellurium-selenium-cadmium film obtained by the preparation method of pre-oxidation is low in the past. Moreover, in the preparation process of the tellurium-selenium-cadmium alloy thin film, regulation and control of the selenium content are more accurate, controllability is higher, when the tellurium-selenium-cadmium alloy thin film is applied to large-scale production, quality stability of products is better, and the tellurium-selenium-cadmium alloy thin film is of great significance to large-scale industrial production.

The invention discloses an assembly type cadmium telluride solar module and a solar curtain wall, and belongs to the technical field of curtain walls, the assembly type cadmium telluride solar module comprises a cadmium telluride solar curtain wall body and an assembly outer frame arranged on one side of the cadmium telluride solar curtain wall body, and one side of the cadmium telluride solar curtain wall body is bonded with a connecting frame through glue; an assembly inner frame is arranged on one side of the assembly outer frame, and the assembly outer frame is rotationally connected with the assembly inner frame through a hinge; an outer transverse plate and an inner transverse plate are fixedly connected to the inner walls of the outer assembling frame and the inner assembling frame correspondingly, an auxiliary electric push rod is embedded in the side face of the outer transverse plate, a moving part of the auxiliary electric push rod is connected with a pulley used for pushing the inner transverse plate to move, a winch is installed on the inner wall of the outer assembling frame, and a steel wire rope of the winch is fixedly connected with the inner assembling frame. And a plurality of safety ropes are connected between the outer transverse plate and the inner transverse plate. According to the assembly type cadmium telluride solar module and the solar curtain wall, the inclination angle can be adjusted, and the stability can be guaranteed.

The utility model provides a cadmium telluride series semiconductor crystal annealing device and a cadmium telluride series semiconductor crystal. The annealing device comprises: a crucible having a first zone and a second zone, the first zone being used for accommodating cadmium-containing chloride and / or indium-containing chloride, and the second zone being used for accommodating cadmium telluride series semiconductor crystals; the heating furnace comprises a furnace body and a heating device, the furnace body is used for containing the crucible, and the heating device is used for heating the crucible, so that the chloride containing cadmium and / or the chloride containing indium are / is molten into an annealing agent in a molten state; and the position adjusting device is connected with the heating furnace and is used for adjusting the position of the crucible accommodated in the furnace body, so that the cadmium telluride series semiconductor crystals are soaked in the annealing agent in the molten state, and the annealing agent in the molten state is used for annealing the cadmium telluride series semiconductor crystals. The annealing device can be used for preparing crystals with very good performance.

The invention relates to a preparation method of a tellurium-cadmium-mercury double-layer component heterostructure. The preparation method comprises the following steps: forming a doped region on the surface of a tellurium-cadmium-mercury material through ion implantation; impurity distribution is adjusted through impurity distribution regulation and control annealing; growing a cadmium telluride film on the surface of the mercury cadmium telluride; performing diffusion annealing to cause mutual diffusion between cadmium telluride and mercury cadmium telluride, and removing the cadmium telluride film to form a mercury cadmium telluride material with a double-layer component heterostructure; the preparation difficulty of the HgCdTe double-layer component heterostructure is reduced, a good passivation structure can be formed on the HgCdTe surface, the matching of the component heterostructure and the PN junction relative position is easy to realize, and the dark current of the HgCdTe infrared detector is inhibited.

The utility model discloses a cadmium telluride power generation glass sound barrier which comprises a base frame, the base frame is of a U-shaped structure, movable grooves are formed in the inner walls of the two sides of the base frame, a lower sound insulation plate is arranged at the lower end in the base frame, a plurality of upper sound insulation plates are installed on the inner side of the base frame above the lower sound insulation plate, and movable blocks are arranged on the outer walls of the two sides of the upper sound insulation plates. A plurality of locking bolts are installed on the outer surfaces of the two sides of the base frame, one ends of the locking bolts penetrate through the base frame and are in threaded connection with the surfaces of the movable blocks, bottom frames are arranged on the two sides of the bottom end of the base frame, two L-shaped positioning bases are arranged on the outer walls of the bottom frames, and first cadmium telluride power generation glass is installed on the outer wall of one side of the lower sound insulation plate. Second cadmium telluride power generation glass is installed on the outer wall of the side, away from the first cadmium telluride power generation glass, of the lower sound insulation plate. According to the utility model, the purpose that the sound barrier is easy to replace and maintain is achieved, the energy utilization efficiency is improved, and the stability of the sound barrier in use is improved.

The invention relates to a silicon-based tellurium-cadmium-mercury material, an infrared focal plane detector and a preparation method of the silicon-based tellurium-cadmium-mercury material. The silicon-based tellurium-cadmium-mercury material comprises a silicon substrate, a cadmium telluride buffer layer and a tellurium-cadmium-mercury layer, wherein the cadmium telluride buffer layer and the tellurium-cadmium-mercury layer grow on the front surface of the silicon substrate; the back surface of the silicon substrate is provided with an optical metasurface structure, and the optical metasurface structure is composed of microstructure units which are periodically arranged; the size of the maximum cross section of each microstructure unit ranges from 100 nm to 150 nm, the distance between the centers of the maximum cross sections of the adjacent microstructure units ranges from 800 nm to 1000 nm, and the size of each microstructure unit in the direction perpendicular to the surface of the silicon substrate ranges from 400 nm to 600 nm. Experimental results show that when incident light is vertically incident, the infrared transmittance of the material in a medium-wave infrared band of 3-5 microns is greater than or equal to 90%; and when the incident angle of incident light is 0-30 degrees, the infrared transmittance of the material in a medium-wave infrared band of 3-5 microns is still greater than or equal to 90%.

The invention discloses a cadmium telluride crystal preparation cooling device and a using method thereof.The cadmium telluride crystal preparation cooling device comprises a mounting supporting plate, a feeding mechanism is arranged on the front surface of the mounting supporting plate, a cooling mechanism is arranged at one end of the front side of the mounting supporting plate, the feeding mechanism comprises a moving rail, the moving rail is arranged on the front surface of the mounting supporting plate, and the moving rail is arranged on the front side of the mounting supporting plate. A limiting cavity is formed in the middle of the inner side of the moving track, a moving gear rolls on the inner side of the moving track, a moving plate is rotationally connected to one side of the moving gear, a fixing disc is arranged in the middle of the other side of the moving gear, and four guide column blocks are evenly fixed to the outer surface of one side of the fixing disc. The cadmium telluride crystal cooling device has the beneficial effects that cadmium telluride crystals can be conveniently and vertically pushed into the cooling cabin in a circulating mode, the feeding effect can be improved, the cadmium telluride crystals can be conveniently cooled in a stepped mode, large structural defects of the rapid cooling surfaces of the cadmium telluride crystals can be prevented, and the cooling effect of the cadmium telluride crystals is improved.

The present invention provides a cadmium telluride crystal annealing device, which belongs to the technical field of annealing devices, and includes an annealing furnace and a feeding assembly arranged in the annealing furnace, and the inner walls of the openings at both ends of the annealing furnace are installed with outer sealing rings. In the invention, during the cadmium telluride annealing process, argon gas is used to reduce the biochemical dynamics of cadmium, inhibit the formation of new vacancy defects, and enable the crystal structure to maintain relatively better integrity. At the same time, the added chromium chloride, indium and aluminum are vaporized during the heating process to interact with the relevant elements in the crystal, so that the distribution of the elements inside the crystal is more uniform. Two groups of mounting seats are set to feed the crystals after annealing and the crystals to be annealed at the same time, so as to improve the continuity of the annealing process and thus improve the efficiency of annealing. In addition, the set limit frame limits and fixes the crystals entering the furnace body during the feeding process, and releases the fixation of the crystals after unloading, so as to abandon manual work to achieve rapid fixation of the cadmium telluride crystals.

The application relates to the field of building energy saving, and particularly discloses a photovoltaic-electrochromic integrated toughened vacuum insulating glass intelligent outer facade component which comprises, from outside to inside, a first toughened glass substrate, a first PVB film, a cadmium telluride battery piece, a second PVB film, a second toughened glass substrate, a hollow layer, an EC electrochromic layer, a third toughened glass substrate, a vacuum cavity, a support column, an inner layer toughened glass substrate and a wiring module. The cadmium telluride battery piece is used for providing driving electric energy for the EC electrochromic layer, the vacuum cavity and the hollow layer form a double heat insulation structure, and the wiring module is used for realizing electric energy transmission and control signal access. The application realizes integrated integration of photovoltaic power generation, electrochromic light control and vacuum insulation functions, has the characteristics of good energy saving effect, high structural strength, excellent sealing performance and high intelligent degree, and is suitable for the field of building outer facades.

The invention discloses a fluorescent nanosensor based on the Strecker-like method for synthesizing isoindole and combining cadmium telluride quantum dots and its application, which is a composite system composed of 2,3-naphthalene dicarboxaldehyde and potassium sulfite as probe solutions and combined with cadmium telluride quantum dots. Cadmium telluride quantum dots are used as a fluorescence source to emit bright red fluorescence, 2,3-naphthalene dicarboxaldehyde and potassium sulfite are open-type probe solutions, and the addition of carbamate pesticides interacts with 2,3-naphthalene dicarboxaldehyde and potassium sulfite to synthesize an isoindole derivative to emit green fluorescence, thereby realizing the detection of carbamate pesticides based on the ratio fluorescence principle. The nanosensor relies on the fluorescence open-type response detection signal, presenting a significant change from bright red to green fluorescence, having a good visualization effect, and having high sensitivity, good selectivity, strong anti-interference ability, and low detection limit.

The application provides an infrared absorption material based on doping regulation, a preparation method and an infrared detector. By introducing selenium atoms to replace tellurium atoms in a sodium gallium telluride material, the material is doped according to a doping ratio of 1:4 to 1:2 of atomic weight, the energy band structure and optical properties of the material are regulated, a new infrared absorption material is obtained, and the light absorption performance of the material in the infrared wave band is significantly improved. According to the component characteristics of the infrared absorption material, a specific preparation scheme is provided, the preparation is completed by grinding, secondary melting and annealing treatment of the set principle mass of sodium single substance, gallium single substance, tellurium single substance and selenium single substance, and the band gap and absorption intensity are accurately adjusted, and the symmetry and crystal stability of the material are also considered.

The invention belongs to the technical field of solar cells, and particularly relates to a preparation method and application of a copper-doped cadmium telluride thin-film solar cell. The preparation method of the copper-doped cadmium telluride thin-film solar cell comprises the following steps: preparing a transparent conductive layer, a window layer, an absorption layer and a back contact layer on a transparent substrate in sequence, then soaking the transparent substrate in a copper salt solution, then preparing a back electrode layer on the side of the back contact layer, and carrying out annealing treatment. According to the invention, copper doping is realized based on a soaking method, and hole transport efficiency can be improved, energy band matching can be optimized and interface recombination loss can be reduced by controlling the concentration, the type and the soaking time of the copper salt solution, so that the solar cell has good open-circuit voltage, short-circuit current and filling factors, relatively high conversion efficiency can be realized, and the conversion efficiency can reach 19.62%. Meanwhile, the preparation process is simple and can be completed in the atmospheric environment, and compared with a traditional process, the annealing temperature is low, so that the preparation cost is low.

The invention belongs to the technical field of sodium-ion batteries, and particularly relates to an iron-manganese-based sodium-ion battery positive electrode material as well as a preparation method and application thereof. The preparation method of the iron-manganese-based sodium ion battery positive electrode material comprises the following steps: adding ferric nitrate and manganese nitrate into water for dissolving, performing spray pyrolysis to obtain an iron-manganese oxide precursor, performing ball-milling mixing on sodium carbonate, the iron-manganese oxide precursor and lanthanum telluride, and calcining in an inert gas atmosphere to obtain a composite material; and adding Ni4O4 cubic alkane modified carbazole, the composite material and manganese dioxide into dilute sulphuric acid for ultrasonic dispersion, stirring for reaction, centrifuging, washing and drying to obtain the iron-manganese-based sodium ion positive electrode material. The iron-manganese-based sodium ion battery positive electrode material provided by the invention has the advantages of stable rate cycle, high specific capacity and excellent capacity retention rate.

The invention belongs to the technical field of semiconductor material detection, and particularly relates to a method for identifying a polar surface of a tellurium-cadmium compound crystal (111). The method comprises the steps that S1, cutting is conducted along the face of a tellurium-cadmium compound crystal ingot (111), and the cut face is ground and polished to be flat; s2, cleaning the surface of the sample; s3, putting the cleaned sample into a KOH aqueous solution for treatment, then taking out the sample, and washing off KOH residual liquid; s4, the sample washed in the step S3 is put into a 10%-15% H2O2-NH4F solution to stand for 5-10 min, and then residual liquid is washed away; d5, the color of the surface of the sample washed in the step S4 is observed, and if it is observed that the surface of the sample is black, it is judged that the surface is the (111) A face of the cadmium telluride or cadmium zinc telluride sample; and if the surface of the sample is observed to be colored, judging that the surface is a (111) B surface of the cadmium telluride or cadmium zinc telluride sample. According to the method disclosed by the invention, the (111) A surface and the B surface of the tellurium-cadmium compound crystal can be distinguished in a relatively short time, and are easy to observe.