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Cadmium telluride thin-film battery and manufacturing method thereof

A thin-film battery and cadmium telluride technology, which is applied in the manufacture of circuits, electrical components, and final products, etc., to achieve the effects of reducing optical distance, improving light absorption capacity, and good light trapping effect

Active Publication Date: 2012-11-14
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, CIGS batteries have more than 20 phases, so the preparation of a single chalcopyrite phase poses a severe challenge. It requires precise and harsh on-line detection and subsequent heat treatment processes, which directly leads to the slow progress in the large-scale production of the battery.

Method used

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  • Cadmium telluride thin-film battery and manufacturing method thereof
  • Cadmium telluride thin-film battery and manufacturing method thereof
  • Cadmium telluride thin-film battery and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0034] Such as figure 1 As shown, a cadmium telluride thin film battery includes: a substrate 1 and an epitaxial stack grown on the substrate 1 . The epitaxial stack is sequentially composed of a conductive layer 2 , a window layer 3 , a light absorbing layer 4 , a back barrier layer 5 and a back electrode 6 from bottom to top. The window layer 3 is a textured cadmium sulfide thin film layer, the light absorbing layer 4 is a cadmium telluride thin film layer, and the back barrier layer 5 is zinc telluride, copper-doped zinc telluride composite layer, mercury telluride and / or copper-doped mercury telluride Composite film layer. The back electrode 6 is one or more of graphite slurry or graphene slurry thin film layer or copper thin film layer, nickel thin film layer, copper-nickel alloy thin film layer, molybdenum thin film layer. A barrier layer can be selected between the substrate 1 and the conductive layer 2, the barrier layer is an indium oxide, aluminum oxide, tin oxide...

Embodiment 2

[0043] This embodiment is the same as Embodiment 1 except for the following features: the preparation process of the cadmium telluride thin film battery is as follows:

[0044] 1) Preparation of transparent conductive layer : Low-pressure chemical vapor deposition (LPCVD) is used to deposit fluorine-doped tin oxide (FTO) conductive glass. Among them, the substrate temperature is 400 o C, the reaction pressure is 3kPa, the reaction precursor is Tetramethyltin (TMT), Bromotrifluoromethane (CBrF 3 ) gas provides the source of F, and at the same time feeds oxygen (O 2 ) and nitrogen (N2), wherein nitrogen (N2) is used as a carrier gas; conductive layer The deposition thickness is about 500nm.

[0045] ) window layer preparation: Adopt chemical water bath method to prepare cadmium sulfide (CdS) layer, reactant is ammonium acetate, cadmium acetate, ammoniacal liquor and thiourea; Add deionized water in the airtight container again, heat to 80 o C, add cadmium acetate, ammon...

Embodiment 3

[0051] This embodiment is the same as Embodiment 1 except for the following features: the preparation process of the cadmium telluride thin film battery is as follows:

[0052] 1) Preparation of transparent conductive layer : Low-pressure chemical vapor deposition (LPCVD) is used to deposit fluorine-doped tin oxide (FTO); the substrate temperature is 400 o C, the reaction pressure is 3kPa, the reaction precursor is Tetramethyltin (TMT), Bromotrifluoromethane (CBrF 3 ) gas provides the source of F, and at the same time feeds oxygen (O 2 ) and nitrogen (N2), wherein nitrogen (N2) is used as a carrier gas; conductive layer The deposition thickness is about 500nm.

[0053] ) window layer preparation: Adopt chemical water bath method to prepare cadmium sulfide (CdS) layer, reactant is ammonium acetate, cadmium acetate, ammoniacal liquor and thiourea; Add deionized water in the airtight container again, heat to 80 o C, add cadmium acetate, ammonium acetate, and ammonia water...

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Abstract

The invention discloses a perform-optimized cadmium telluride thin-film battery and a manufacturing method for the cadmium telluride thin-film battery, wherein the cadmium telluride thin-film battery comprises a substrate and an epitaxy lamination layer; the epitaxy layer lamination sequentially consists of a conducting layer, a window layer, a light-absorbing layer, a back barrier layer and a back electrode from the bottom up; the window layer is of a textured cadmium sulfide thin-film layer; the light-absorbing layer is of a cadmium telluride thin-film layer, the back barrier layer is of a zinc telluride / copper-doped zinc telluride composite layer or a mercury telluride / copper-doped mercury telluride composite thin-film layer, and the back electrode is of one or more of graphite slurry or graphene slurry thin-film layer or copper thin-film layer, nickel thin-film layer, copper-nickel alloy thin-film layer and molybdenum thin-film layer. According to the cadmium telluride thin-film battery provided by the invention, the window area is textured and an optical path of a light-transmitting area is reduced, and thus a light-absorbing capacity is further improved and the better light-trapping effect is realized.

Description

technical field [0001] The invention relates to the technical field of cadmium telluride thin film batteries, in particular to a cadmium telluride thin film battery and a preparation method thereof. Background technique [0002] Now, the world is facing the dual pressure of energy shortage and environmental protection. The inexhaustible clean energy solar energy is getting more and more attention. The energy emitted by the sun to the earth every second is as high as 8×10 10 Megawatt, equivalent to 6×10 9 tons of standard coal. At present, how to effectively use solar energy resources and the new technology revolution that may be triggered by this has made countries focus on solar cells. [0003] CdTe solar cells are a new generation of high-efficiency, low-cost, and large-scale industrially produced thin-film solar cells, and are known as one of the most promising solar cells. The thickness of the absorption layer of CdTe solar cells is only 1% of that of commercial sili...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/18
CPCY02P70/50
Inventor 裴艳丽梁军裴宇波汤美茹梁湘平
Owner SUN YAT SEN UNIV
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