95 results about "Zinc telluride" patented technology

The invention discloses a perform-optimized cadmium telluride thin-film battery and a manufacturing method for the cadmium telluride thin-film battery, wherein the cadmium telluride thin-film battery comprises a substrate and an epitaxy lamination layer; the epitaxy layer lamination sequentially consists of a conducting layer, a window layer, a light-absorbing layer, a back barrier layer and a back electrode from the bottom up; the window layer is of a textured cadmium sulfide thin-film layer; the light-absorbing layer is of a cadmium telluride thin-film layer, the back barrier layer is of a zinc telluride / copper-doped zinc telluride composite layer or a mercury telluride / copper-doped mercury telluride composite thin-film layer, and the back electrode is of one or more of graphite slurry or graphene slurry thin-film layer or copper thin-film layer, nickel thin-film layer, copper-nickel alloy thin-film layer and molybdenum thin-film layer. According to the cadmium telluride thin-film battery provided by the invention, the window area is textured and an optical path of a light-transmitting area is reduced, and thus a light-absorbing capacity is further improved and the better light-trapping effect is realized.

A buffer layer of zinc telluride (ZnTe) or titanium dioxide (TiO2) is formed directly on a silicon substrate. Optionally, a layer of AlN is then formed as a second layer of the buffer layer. A template layer of GaN is then formed over the buffer layer. An epitaxial LED structure for a GaN-based blue LED is formed over the template layer, thereby forming a first multilayer structure. A conductive carrier is then bonded to the first multilayer structure. The silicon substrate and the buffer layer are then removed, thereby forming a second multilayer structure. Electrodes are formed on the second multilayer structure, and the structure is singulated to form blue LED devices.

A photonic crystal fiber polarization splitter is composed of a fiber core and a wrapping layer, wherein the refractive index of the wrapping layer is smaller than that of the fiber core, the background material of the wrapping layer is tellurate, four round air holes a and four round air holes b in the center of the wrapping layer jointly form a fiber core area, the round air holes a are arranged in two rows, the two round air holes a in each row are tangential, the fiber core is encircled by the wrapping layer, the wrapping layer is formed by round air holes b which have the same diameters and are arranged periodically in a regular hexagon mode, the total number of the layers of the round air holes b which are periodically arranged is five, and a small round air hole c and a small round air hole d are formed in the outer side of the wrapping layer and located at the positions symmetrical about the fiber core. The photonic crystal fiber polarization splitter has the advantages that zinc telluride serves as the background material of the polarization splitter, the polarization splitter is simple in structure, good in beam splitting effect and easy to manufacture; the small air holes are formed in the outer side of the wrapping layer to form defects, a defect mode is generated so that the defect mode is coupled to a fiber core mode, and the purpose that light is propagated in the orthogonal direction to be split is achieved.

The invention discloses a nanowire intermediate band solar cell structure based on a butterfly-shaped plasmon enhancement antenna. A flat oxygen doped zinc telluride / zinc oxide core shell structure nanowire is arranged on a silicon dioxide or quartz substrate. The zinc oxide is arranged on an outer layer. A nanowire length of the oxygen doped zinc telluride / zinc oxide core shell structure is 1-10 micron. A diameter of the core shell structure nanowire is 200-400 nm. A thickness of the zinc oxide is 5-40 nm. Two sides of the core shell structure nanowire are provided with several pairs of metal-aluminum butterfly-shaped antennas. Each pair of the metal-aluminum butterfly-shaped antennas is a tip-to-tip triangular pyramid structure. In each pair of the butterfly-shaped antennas, the two tip-to-tip triangular pyramids can be centrosymmetric relative to the nanowire and can be non-centrosymmetrical. Problems that a state density of an intermediate band of an intermediate band solar cell absorption layer is small and absorption efficiency is low are mainly solved, sunlight full spectrum absorption is enhanced and overall photoelectric conversion efficiency of a device is increased.

A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.

The invention provides a method for preparing water-phase non-toxic quantum dot zinc telluride. The preparation method comprises the following steps: a, NaHTe preparation: sodium borohydride is dissolved in deionized water, tellurium powder is quickly added into the solution, and a reactor is sealed by a rubber plug which is provided with a pin hole to be communicated with the outside for releasing hydrogen generated in reaction; in the reacting process, the system is cooled by ice-water bath, after several hours, the black tellurium powder disappears, white sodium borate is generated, and upper clear NaHTe solution is light purple; b, preparation of Zn+TGA thioglycolic acid precursor: Zn(NO3)2 is added to a conical flask, a certain amount of TGA is added to the solution by a miniature pipetting gun, pH of the mixed solution of the Zn(NO3)2 and the TGA is adjusted by NaOH after sufficient stirring, the solution is kept for later use after sufficient stirring; and c, preparation of water phase ZnTe quantum dot: the mixed solution prepared in the step b is deoxidized by N2 gas, and the NaHTe in the step 1 is quantitatively taken by a particle injection needle, and is injected into the mixed solution, and the solution is continuously stirred to obtain ZnTe nanometer crystal.

Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

The invention discloses a production process of a zinc telluride-doping cuprous telluride target material, and particularly provides a production method of a zinc telluride-doping cuprous telluride material and a production method of the target material made therefrom. The particularly include: crushing simple substances of Zn, Te and Cu into uniform chips or powders, accurately weighing the raw materials, and uniformly placing the three simple substances into a quartz tube according to theoretical amount; vacuumizing the tube, and performing sealed in-tube synthesis; and ball-milling a synthesized ZnTe(99+x)Cu2Te(1-x) at% material to obtain dried ZnTe(99+x)Cu2Te(1-x) at% powder; performing hot pressed sintering with the powder being a raw material to obtain a ZnTe(99+x)Cu2Te(1-x) at% target green body; and performing mechanical processing on the target green body to prepare the target material. By means of the sealed in-tube synthesis, the ZnTe(99+x)Cu2Te(1-x) at%, which is less in impurity phase and is uniform in component, is synthesized according to a time-temperature program researched by the company, purity of the synthetic product being higher than 99.995%. The zinc telluride-doping cuprous telluride target material, produced by the original hot pressed sintering process of our company, is high in relative density, is uniform in components and crystalline grain, is smallin size of the crystalline grain and has great film-forming property.