5 results about "Silver telluride" patented technology

This invention belongs to the field of thermoelectric thin film technology, specifically relating to the preparation of a high-density domain-structured flexible silver telluride thin film and its reversible thermoelectric performance control method. The film possesses a high-density strip-like domain structure with numerous twins and stacking faults. The high-density domain boundaries provide a large number of ultra-highly active sites, allowing for wide-range reversible control of thermoelectric performance through simple post-processing methods, such as oxidation annealing, chemical and physical deposition of nano-metal particles. The high-density domain-structured silver telluride thin film prepared by this invention uses a silver film prepared by magnetron sputtering as a precursor, reacting it with tellurium vapor in a tube furnace to generate a dense thin film. The preparation method is simple, low-cost, highly reproducible, and operates at a low reaction temperature, making it suitable for large-scale preparation and compatible with flexible substrates such as polyimide. The high thermoelectric performance and reversible control characteristics of this film are of great significance for applications in high-performance flexible thermoelectric generators and multifunctional sensors.

The invention relates to the technical field of thermoelectric materials, in particular to a high-flexibility silver telluride thermoelectric thin film with a pearl scallop structure and a preparation method and application of the high-flexibility silver telluride thermoelectric thin film. The non-stoichiometric silver telluride thermoelectric film with a pearl scallop structure is rapidly prepared through an intermittent co-sputtering process under the conditions of room temperature and fixed working air pressure; the pearl scallop structure obviously improves the mechanical property and the thermoelectric property of the silver telluride thermoelectric thin film; after the silver telluride thermoelectric thin film is bent and circulated for 5000 times, the surface has no crack, the resistance is only increased by 20%, and excellent flexibility is shown; and meanwhile, the power factor can reach 51.92 mu W m <-1 > K <-2 > under the room temperature condition, and the material has good thermoelectric performance, meets the requirements of flexible wearable thermoelectric devices, and has potential commercial application prospects.

The invention relates to a rapid and stable infrared photodiode detector, which adopts a silver telluride quantum dot (Ag2Te QDs) / lead sulfide quantum dot (PbS QDs) / stannic oxide (SnO2) / gold electrode (Au) structure, and provides a solution method for preparation. The Ag2Te quantum dots are used as the light absorption layer and the hole transport layer, and surface defects of the PbS quantum dot light absorption layer are passivated at the same time, so that the transport rate and the stability of photocarriers are remarkably improved. Under the irradiation of near-infrared light of 940 nm, the photocurrent attenuation rate of the device is greatly reduced from 40% to 5% after a continuous dynamic illumination test for 1200 seconds. In addition, the device exhibits excellent performance, including a responsivity of up to 150 A / W and a detectivity of 4.8 * 10 < 13 > Jones. The excellent performance indexes show that the infrared photodiode detector has a wide application prospect and an important practical value in the field of photoelectric detection.

The invention provides a method for growing a silver telluride single crystal by CVD (Chemical Vapor Deposition) by taking silicon-silicon dioxide as a substrate, which is used for preparing single crystal Ag2Te, and relates to the technical field of two-dimensional material preparation, and the method comprises the following steps: synthesizing a polycrystalline Ag2Te precursor by a solid-phase sintering method: mixing Ag powder and Te powder according to a stoichiometric ratio, and carrying out a sealed reaction in a muffle furnace to generate polycrystalline Ag2Te; the method comprises the following steps: grinding polycrystalline Ag2Te into powder, taking the powder as a CVD (Chemical Vapor Deposition) growth source, and growing single crystal Ag2Te by taking silicon-silicon oxide as a substrate; in the growth process, argon is adopted as protective gas, and gas washing is completed through vacuumizing and argon filling circulation. The method has the advantages that high risk caused by direct use of hydrogen is avoided, the problem of difficulty in silver telluride separation operation caused by a complex mixed system is also avoided, meanwhile, silicon-silicon oxide is used as a substrate for growth, selectivity of the substrate for Ag2Te growth is increased, portability of a transfer material is improved, and the method is suitable for industrial production. The prepared single crystal Ag2Te has the advantages of large quantity, high quality, large size and the like.

The application provides a kind of silver telluride quantum dots and its preparation method, belongs to the field of nanometer materials.The preparation method of silver telluride quantum dots provided by the application includes the following steps: under the protection of inert gas, silver source, mercaptan, halogenated alkane, tellurium precursor and solvent are mixed, the synthesis of quantum dots is regulated by nucleophilic substitution reaction, and silver telluride colloidal quantum dots are obtained.The results of examples show that the preparation method provided by the application enhances the colloidal stability of quantum dots, and the fluorescence emission peak of silver telluride colloidal quantum dots is 1176-2023nm, with a wide fluorescence emission window.