13 results about "Silver telluride" patented technology

This invention belongs to the field of thermoelectric thin film technology, specifically relating to the preparation of a high-density domain-structured flexible silver telluride thin film and its reversible thermoelectric performance control method. The film possesses a high-density strip-like domain structure with numerous twins and stacking faults. The high-density domain boundaries provide a large number of ultra-highly active sites, allowing for wide-range reversible control of thermoelectric performance through simple post-processing methods, such as oxidation annealing, chemical and physical deposition of nano-metal particles. The high-density domain-structured silver telluride thin film prepared by this invention uses a silver film prepared by magnetron sputtering as a precursor, reacting it with tellurium vapor in a tube furnace to generate a dense thin film. The preparation method is simple, low-cost, highly reproducible, and operates at a low reaction temperature, making it suitable for large-scale preparation and compatible with flexible substrates such as polyimide. The high thermoelectric performance and reversible control characteristics of this film are of great significance for applications in high-performance flexible thermoelectric generators and multifunctional sensors.

The invention discloses a preparation and liquid-phase ligand exchange method of a sulfydryl-free silver telluride colloidal quantum dot, and the sulfydryl-free silver telluride colloidal quantum dot is prepared by adopting oleylamine as a solvent and a ligand for quantum dot synthesis, silver halide as a cationic precursor and organic lithium modified TOP-Te as an anionic precursor through a thermal injection method. The size and the absorption spectrum of the silver telluride quantum dots are adjusted by accurately regulating and controlling the reaction time, the temperature, the halogen type and the organic lithium content. The method is simple to operate and good in repeatability, and the prepared silver telluride quantum dots have excellent size distribution and adjustable absorption wavelength (856-1589 nm). On the basis of oleylamine coordinated silver telluride quantum dots, conductive ink dispersed in polar solvent colloid is obtained by adopting a liquid-phase ligand exchange method which is simple to operate, a flat, compact, crack-free and few-defect high-quality thin film is prepared through a single spin-coating process, and the thin film has application potential in the field of short-wave infrared detectors.

The invention provides a quantum dot phototransistor capable of realizing high-performance infrared detection and a preparation process of the quantum dot phototransistor, and belongs to the field of photoelectric components. Comprising a substrate, a metal electrode pair, a ZnO film and Ag2Te quantum dots which are arranged in sequence, and a high-speed center spin-coating method is adopted. The high-performance photoelectric detector based on the Ag2Te colloidal quantum dots is prepared by adopting a high-speed center spin-coating method technology, the detector has a simple transistor structure of Ag2Te / ZnO, carrier transport is accelerated through regulation and control of grid voltage and channel voltage, the performance of the device is further improved, the device has excellent performance from visible light to near infrared light, and the photoelectric detector has good application prospects. And under the incident light of 660 nm, the response rate (2050 A / W) and the detection rate (4.8 * 10 < 13 > Jones) are ultrahigh, and under the incident light of 940 nm, the response rate (2450 A / W) and the detection rate (6.8 * 10 < 13 > Jones) are ultrahigh.

The invention relates to a method for increasing the room-temperature thermoelectric figure of merit of silver telluride, and belongs to the technical field of thermoelectric materials. When the silver telluride is used as a thermoelectric material, a magnetic field perpendicular to the heat flow direction is applied to the silver telluride; the composition of the silver telluride is Ag < 2 + x > Te, wherein 0 lt; x is less than or equal to 0.1; the heat flow direction is the direction in which heat flows from the high-temperature end to the low-temperature end. The method is easy and convenient to implement, miscellaneous element doping modification does not need to be carried out on the material, and the mechanical strength of the material is reserved; according to the method, the room-temperature thermoelectric figure of merit of the silver telluride material can be remarkably improved.

The preparation method comprises the following steps: (1) dissolving glutathione and organic amine hydrochloride double ligands in water, adding a silver nitrate solution, stirring and mixing, adjusting the pH value to be greater than 7, and introducing gas to remove oxygen, so as to obtain a cationic silver source; (2) tellurium powder and sodium borohydride are added into water, protective gas is introduced for stirring reaction, the solution gradually becomes amaranth, and an anion tellurium source is obtained; (3) rapidly injecting the anion tellurium source into the cation silver source, and carrying out water bath heating reaction to obtain a brown yellow solution; and (4) purifying the brown yellow solution to obtain the double-ligand silver telluride quantum dot solution. The quantum dot is good in fluorescence performance, the fluorescence quantum yield reaches up to 22.19%, good light stability and biocompatibility are achieved, the quantum dot is applied to kidney injury fluorescence imaging, kidney injury can be rapidly diagnosed and recognized, and the quantum dot is superior to a clinical blood biochemical index detection method.

The invention relates to the technical field of thermoelectric materials, in particular to a high-flexibility silver telluride thermoelectric thin film with a pearl scallop structure and a preparation method and application of the high-flexibility silver telluride thermoelectric thin film. The non-stoichiometric silver telluride thermoelectric film with a pearl scallop structure is rapidly prepared through an intermittent co-sputtering process under the conditions of room temperature and fixed working air pressure; the pearl scallop structure obviously improves the mechanical property and the thermoelectric property of the silver telluride thermoelectric thin film; after the silver telluride thermoelectric thin film is bent and circulated for 5000 times, the surface has no crack, the resistance is only increased by 20%, and excellent flexibility is shown; and meanwhile, the power factor can reach 51.92 mu W m <-1 > K <-2 > under the room temperature condition, and the material has good thermoelectric performance, meets the requirements of flexible wearable thermoelectric devices, and has potential commercial application prospects.

The present invention belongs to the technical field of high-purity alloys, and discloses silver telluride and a preparation method thereof. In this preparation method, tellurium and silver are heated to 500-600 °C at a heating rate of ≤10 °C / min in an inert gas atmosphere, held for 30-60 min, then heated to 800-900 °C, held for 1-3 h, and then heated to 1000-1150 °C, held for 3-5 h to obtain silver telluride. By means of three-stage heating and holding, the present invention ensures complete reaction of silver telluride while reducing the loss of tellurium.

The invention relates to a rapid and stable infrared photodiode detector, which adopts a silver telluride quantum dot (Ag2Te QDs) / lead sulfide quantum dot (PbS QDs) / stannic oxide (SnO2) / gold electrode (Au) structure, and provides a solution method for preparation. The Ag2Te quantum dots are used as the light absorption layer and the hole transport layer, and surface defects of the PbS quantum dot light absorption layer are passivated at the same time, so that the transport rate and the stability of photocarriers are remarkably improved. Under the irradiation of near-infrared light of 940 nm, the photocurrent attenuation rate of the device is greatly reduced from 40% to 5% after a continuous dynamic illumination test for 1200 seconds. In addition, the device exhibits excellent performance, including a responsivity of up to 150 A / W and a detectivity of 4.8 * 10 < 13 > Jones. The excellent performance indexes show that the infrared photodiode detector has a wide application prospect and an important practical value in the field of photoelectric detection.

The present invention relates to an infrared optical device and a manufacturing method therefor, the infrared optical device comprising: a substrate; an electron transport layer; a first silver telluride quantum dot nanocrystalline layer having halogen atom ligands bonded thereto; a second silver telluride quantum dot nanocrystalline layer having thiol-based organic ligands bonded thereto; a hole transport layer; and a metal electrode, wherein these elements are sequentially stacked.

The invention provides a method for growing a silver telluride single crystal by CVD (Chemical Vapor Deposition) by taking silicon-silicon dioxide as a substrate, which is used for preparing single crystal Ag2Te, and relates to the technical field of two-dimensional material preparation, and the method comprises the following steps: synthesizing a polycrystalline Ag2Te precursor by a solid-phase sintering method: mixing Ag powder and Te powder according to a stoichiometric ratio, and carrying out a sealed reaction in a muffle furnace to generate polycrystalline Ag2Te; the method comprises the following steps: grinding polycrystalline Ag2Te into powder, taking the powder as a CVD (Chemical Vapor Deposition) growth source, and growing single crystal Ag2Te by taking silicon-silicon oxide as a substrate; in the growth process, argon is adopted as protective gas, and gas washing is completed through vacuumizing and argon filling circulation. The method has the advantages that high risk caused by direct use of hydrogen is avoided, the problem of difficulty in silver telluride separation operation caused by a complex mixed system is also avoided, meanwhile, silicon-silicon oxide is used as a substrate for growth, selectivity of the substrate for Ag2Te growth is increased, portability of a transfer material is improved, and the method is suitable for industrial production. The prepared single crystal Ag2Te has the advantages of large quantity, high quality, large size and the like.

The present invention relates to the technical field of quantum dots in the near-infrared region, and specifically relates to a Pt x Te y :Ag2Te quantum dot, its synthesis method and application. The quantum dot has a multi-layer structure, with Ag2Te quantum dots inside and a Pt x Te y outer layer structure, where x is any integer from 1 to 3 and y is any integer from 1 to 4. Compared with traditional silver telluride quantum dots, it has a longer fluorescence emission wavelength, up to 2200 nm, and improves the upper limit of the wavelength regulation range compared with existing technical methods. It is an NIR-II silver-based quantum dot, with the characteristics of low toxicity, silver-based, and near-infrared region quantum dots. The synthesis method of the present invention is to continuously grow Pt x Te y on the surface of Ag2Te quantum dots to obtain Pt x Te y :Ag2Te quantum dots with different particle sizes and different fluorescence emission wavelengths.

The application provides a kind of silver telluride quantum dots and its preparation method, belongs to the field of nanometer materials.The preparation method of silver telluride quantum dots provided by the application includes the following steps: under the protection of inert gas, silver source, mercaptan, halogenated alkane, tellurium precursor and solvent are mixed, the synthesis of quantum dots is regulated by nucleophilic substitution reaction, and silver telluride colloidal quantum dots are obtained.The results of examples show that the preparation method provided by the application enhances the colloidal stability of quantum dots, and the fluorescence emission peak of silver telluride colloidal quantum dots is 1176-2023nm, with a wide fluorescence emission window.

The invention relates to a preparation method of a one-dimensional silver telluride nanowire, and belongs to the technical field of surface synthesis. According to the method, the strategy that high-coverage tellurium powder generates stress on the surface of a silver substrate is utilized, the deposition amount of the tellurium powder on the surface of the silver substrate is accurately controlled through the molecular beam epitaxy technology, a sample is heated to the growth temperature and then subjected to heat preservation for a certain time, then the sample is cooled to the room temperature, and the one-dimensional silver telluride nanowire is obtained.