Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Distributed feedback laser containing silver telluride quantum dots and preparation method thereof

A technology of distributed feedback and quantum dots, which is applied in the direction of lasers, phonon exciters, semiconductor lasers, etc., can solve the problems of poor photothermal stability of organic polymers, affecting the stability and life of lasers, and achieve high stability.

Inactive Publication Date: 2019-01-29
NANJING UNIV OF POSTS & TELECOMM
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Organic polymers have poor photothermal stability, which affects laser stability and lifetime

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Distributed feedback laser containing silver telluride quantum dots and preparation method thereof
  • Distributed feedback laser containing silver telluride quantum dots and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The present invention will be further explained below in conjunction with the accompanying drawings.

[0022] Such as figure 2 As shown, the distributed feedback laser containing silver telluride quantum dots of the present invention includes a quartz substrate 2 arranged upwards in sequence, and a silicon dioxide periodic grating 3 containing silver telluride quantum dots.

[0023] The silicon dioxide periodic grating 3 containing silver telluride quantum dots is composed of a silicon dioxide periodic grating and silver telluride quantum dots 1 embedded in the silicon dioxide periodic grating. The silver telluride quantum dots 1 are uniformly distributed in the silicon dioxide periodic grating. Silver telluride quantum dots 1 as figure 1 shown. The silver telluride quantum dot 1 is an optical gain medium, and the silver telluride quantum dot 1 with only double spin degeneracy in the lowest quantum state with low toxicity can realize near-infrared optical gain with ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a distributed feedback laser containing silver telluride quantum dots and a preparation method thereof. The distributed feedback laser comprises a quartz substrate and silicondioxide periodic gratings containing silver telluride quantum dots, wherein the quartz substrates and the silicon dioxide periodic gratings are sequentially arranged upwards. According to the distributed feedback laser, the low-toxicity silver telluride quantum dots with the lowest quantum state being 2-fold degeneracy are used to replace lead salt quantum dots with the lowest quantum state being8-fold degeneracy so as to achieve near-infrared optical gain with a low threshold. The photothermal stability of silicon dioxide is far higher than that of an organic polymer. The periodic gratings are prepared by using a silicon dioxide film containing the silver telluride quantum dots, and finally an environment-friendly distributed feedback near-infrared quantum dot laser with a low thresholdand high stability can be obtained.

Description

technical field [0001] The invention relates to a distributed feedback laser containing silver telluride quantum dots and a preparation method thereof, belonging to the technical field of semiconductor optoelectronic devices. Background technique [0002] Near-infrared lasers can be widely used in fields such as optical communication, remote sensing, and coherent plasma generation. Benefiting from the quantum confinement effect, semiconductor quantum dots exhibit a variety of superior properties as optical gain materials, such as tunable emission wavelength with size, potentially low laser threshold and temperature-insensitive laser performance. At present, near-infrared quantum dot lasers prepared by molecular beam epitaxy have begun commercial applications. Compared with epitaxially grown quantum dots, colloidal quantum dots have a smaller size and a more uniform size distribution, so they have stronger quantum confinement effects and narrower emission peaks. The most co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/12
CPCH01S5/12H01S5/1231
Inventor 廖晨
Owner NANJING UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com