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Micro-disk cavity laser containing silver sulfide quantum dots and preparation method thereof

A technology of quantum dots and silver sulfide, which is applied in the field of semiconductor optoelectronic devices, can solve the problems of reducing the quality factor of the microdisk cavity, and the coupling between colloidal quantum dots and the microdisk cavity cannot be well realized, and achieves the effect of high quality factor.

Inactive Publication Date: 2019-01-29
NANJING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

However, the coupling of colloidal quantum dots and microdisk cavities has not been well realized
At present, the most commonly used method is to coat quantum dots on the prepared silica microdisk cavity, which will significantly reduce the quality factor of the microdisk cavity

Method used

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  • Micro-disk cavity laser containing silver sulfide quantum dots and preparation method thereof
  • Micro-disk cavity laser containing silver sulfide quantum dots and preparation method thereof

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Embodiment Construction

[0023] The present invention will be further explained below in conjunction with the accompanying drawings.

[0024] like figure 1 As shown, the microdisk cavity laser containing silver sulfide quantum dots of the present invention includes a silicon substrate 2, a silicon cylinder 3 and a silicon dioxide disk 4 containing silver sulfide quantum dots arranged upwards in sequence.

[0025] The silicon dioxide disk 4 containing silver sulfide quantum dots is composed of a silicon dioxide disk and silver sulfide quantum dots 1 embedded in the silicon dioxide disk. The silver sulfide quantum dots 1 are evenly distributed in the silica disc. Silver sulfide quantum dots 1 as figure 1 shown. The silver sulfide quantum dot 1 is an optical gain medium, and the silver sulfide quantum dot 1 with only double spin degeneracy in the lowest quantum state with low toxicity can realize near-infrared light gain with a low threshold. Embedding the silver sulfide quantum dots 1 into silicon d...

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Abstract

The invention discloses a micro-disk cavity laser containing silver sulfide quantum dots and a preparation method thereof. The micro-disk cavity laser comprises a silicon substrate, a silicon cylinderand a silicon dioxide disk containing silver sulfide quantum dots. According to the micro-disk cavity laser, the low-toxicity silver sulfide quantum dots with the lowest quantum state being 2-fold degeneracy are used to replace lead salt quantum dots with the lowest quantum state being 8-fold degeneracy so as to achieve near-infrared optical gain with a low threshold. The quantum dots are embedded into silicon dioxide, thereby being capable of avoiding quality factor degradation caused by coating the micro-disk cavity with quantum dots. The micro-disk cavity is prepared by using a silicon dioxide film containing the silver sulfide quantum dots, and finally an environment-friendly micro-disk cavity near-infrared quantum dot laser with a low threshold and a high quality factor can be obtained.

Description

technical field [0001] The invention relates to a microdisk cavity laser containing silver sulfide quantum dots and a preparation method thereof, belonging to the technical field of semiconductor optoelectronic devices. Background technique [0002] Near-infrared lasers can be widely used in fields such as optical communication, remote sensing, and coherent plasma generation. Benefiting from the quantum confinement effect, semiconductor quantum dots exhibit a variety of superior properties as optical gain materials, such as tunable emission wavelength with size, potentially low laser threshold and temperature-insensitive laser performance. At present, near-infrared quantum dot lasers prepared by molecular beam epitaxy have begun commercial applications. Compared with epitaxially grown quantum dots, colloidal quantum dots have a smaller size and a more uniform size distribution, so they have stronger quantum confinement effects and narrower emission peaks. The most common n...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/10
CPCH01S5/10
Inventor 廖晨
Owner NANJING UNIV OF POSTS & TELECOMM
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