The invention discloses a preparation method of a Ni-In2Se3-SnSe2
heterojunction photocatalyst. The preparation method comprises the following steps: synthesizing a Ni-In2Se3-SnSe2 precursor by adopting a one-step solvothermal method; and then, the precursor is subjected to
calcination treatment under the protection of
inert gas, and finally, the Ni-In2Se3-SnSe2
heterojunction photocatalyst is obtained. The core of the In2Se3-SnSe2
heterojunction is that dual regulation and control of an
electronic structure and an interface of the In2Se3-SnSe2 heterojunction are synchronously realized through Ni
doping. On one hand, Ni atoms replace part of In sites to form an
electron trap, photo-induced electrons are effectively captured, and
electron-hole recombination is inhibited; and on the other hand,
lattice mismatch caused by Ni
doping promotes formation of a stable In-Se-Sn interface
chemical bond between In2Se3 and SnSe2, an efficient cross-interface charge transfer channel is constructed, and a carrier migration barrier is greatly reduced, so that synergistic improvement of the
photon-generated carrier separation efficiency is realized. The method is simple in preparation process, mild and controllable in reaction condition and environment-friendly, and has a good industrial application prospect.