This invention discloses an
electroplating solution and method for
copper conductive grid lines with arched cross-sections in photovoltaic
silicon panels, belonging to the field of photovoltaic
electroplating technology. Each
liter of the
electroplating solution contains: 150-250 g of
copper sulfate pentahydrate, 40-70 g of concentrated
sulfuric acid, 10-100 mg of soluble
chloride, 30-300 mg of
polyethylene glycol, 1-20 mg of
sodium polydithiopropane
sulfonate, 1-30 mg of
methylene violet, and the balance being
distilled water. A
silicon wafer with patterned
mask trenches is immersed in the electroplating solution at a
current density of 1-5 A / dm³. 2
Electroplating for 5–90 minutes allows
copper to be deposited in a raised pattern within the trench. After removing the
mask, an arched cross-section of copper conductive grid lines is obtained. This invention utilizes the synergistic effect of
chloride ions,
polyethylene glycol,
sodium polydisulfide dipropane
sulfonate, and
methylene violet to preferentially promote
longitudinal growth of copper within the
mask trench, forming smooth, dense, and minimally shadowed arched grid lines under oblique light. Simultaneously, pure copper exhibits low resistivity and significantly lower cost than
silver paste, thus comprehensively improving the light utilization efficiency and economic viability of photovoltaic cells.