The invention discloses a method for preparing high-quality thick film AlN based on a nano-pattern silicon substrate, the lamellar superimposed AlN materials obtained by the method, from the bottom up, include: a nano-patterned silicon substrate, a nano-pattern AlN nucleation layer, a high-temperature AlN transverse growth layer and a high-temperature AlN longitudinal growth layer, and a periodically arranged air gap is arranged in the nano-pattern silicon substrate, the nano-pattern AlN nucleation layer and the high-temperature AlN lateral growth layer, wherein the air gap has a depth of 10 nm to 1 mum in the Si substrate, a maximum cross-sectional width of 50 nm to 1 mum, and a period of 100 nm to 2 mum. Compared with the existing method for growing thick film AlN, the method of the invention has low cost, can be applied in large-scale industrialization, greatly reduces the defect density of AlN on the silicon substrate, improves the crystal quality of the subsequent device structurematerial, and has the advantages of low cost, low cost, low cost, and low cost, and can be used in large-scale industrialization. LED devices, MEMS, LEDs, RF filters, SAW devices and high-frequency broadband communication have broad application prospects.