311 results about "Focused ion beam" patented technology

The invention provides a self-adaptive error compensation method and system for focused ion beam equipment, and the method comprises the steps: obtaining a real-time error signal set generated by the focused ion beam equipment in a machining process, training a self-adaptive error compensation model according to the real-time error signal set, and generating an error compensation parameter set; inputting the error compensation parameter set into a control unit of the focused ion beam equipment, and generating a real-time compensation control instruction set; adjusting an ion source parameter and a deflection electrode voltage parameter of the focused ion beam equipment according to the real-time compensation control instruction set, and outputting an adjusted ion beam path parameter set; and performing ion beam processing on the target processing area according to the adjusted ion beam path parameter set, and monitoring morphology feature data of the processed area in real time to verify an error compensation effect. According to the invention, harmful effects caused by thermal effects, electric fields or magnetic fields can be eliminated, and the self-adaptability and long-term reliability of a compensation strategy are ensured.

The invention provides a preparation method of a transmission electron microscope ultrathin sample with a cross section of an electron beam sensitive material, which comprises the following steps: selecting a specific region as a to-be-extracted sample region for the electron beam sensitive material by adopting an electron beam imaging technology; depositing a protective layer on the surface of the to-be-extracted sample area by adopting an electron beam and / or an ion beam; bombarding a to-be-extracted sample area by utilizing a high-energy ion beam, extracting an electron beam sensitive material cross section sample from the to-be-extracted sample area, and fixing the extracted sample to a metal bracket; performing pre-thinning treatment on the extracted sample by using a focused ion beam to obtain a first thinned sample of which the thickness is reduced to be less than a first thickness; and transferring the first thinned sample into a micro-beam fixed-point ion thinning system, and carrying out multi-time stepped low-energy ion beam fine thinning treatment on the first thinned sample by using inert gas ion micro-beams to obtain a second thinned sample which is clean in surface and free of a surface ion damage layer and has the thickness reduced to be less than a second thickness, and taking the second thinned sample as a transmission electron microscope ultrathin sample.

The invention relates to the technical field of semiconductor manufacturing, in particular to a sample with a pore structure, and provides a thinning method for preparing a pore sample by using a focused ion beam. According to the method, the front face of a target sample is thinned through FIB, then the back face of the target sample is thinned, the problem that in the prior art, a TEM target sheet generated when the front face and the back face of the target sample are thinned alternately is not of a pore internal structure is solved, and the technical effects of the method are that the efficiency of preparing the pore sample can be improved; and the picture shooting quality of the pore structure sample is improved.

The invention discloses a method for measuring residual stress of a microstructure with a large slenderness ratio, which comprises the following steps of: etching a rectangular grating on the surface of a sample by adopting a focused ion beam technology, and synchronously marking an X-ray detection point; the integrated white light interferometer generates a curvature change curve in real time along a spiral track scanning path, and processes data by applying an empirical mode decomposition algorithm; a six-axis robot control system is used for compensating the position offset of the mark point, the incident angle of the X-ray is adjusted to adapt to the warping surface geometry, and multi-angle stress detection is carried out; establishing a mapping relation through grating-X-ray joint calibration, and generating a two-dimensional stress distribution diagram by using an interpolation algorithm; according to the grating curvature stability and the X-ray diffraction peak signal-to-noise ratio, the weight is dynamically distributed, a three-dimensional residual stress cloud picture is output, and a high-risk area is marked, so that the residual stress analysis capability of a material with a complex shape is effectively improved, more accurate and comprehensive stress distribution information is provided, and the potential material failure problem can be identified and prevented.

The invention provides a rock mass internal pore intelligent characterization and three-dimensional reconstruction method and system, and relates to the technical field of rock mass internal structure analysis, and the method comprises the steps: obtaining a two-dimensional image sequence of a rock core in a target rock mass through a focused ion beam scanning electron microscope slicing-imaging sequence working mode; performing pore segmentation on each two-dimensional image in the two-dimensional image sequence by using the pore segmentation network to obtain a plurality of pore two-dimensional segmentation maps; on the basis of the pore two-dimensional segmentation map, constructing three-dimensional binary volume data of the pores according to a slice sequence; according to the three-dimensional binary volume data, performing three-dimensional reconstruction and structural characterization on rock core pores; according to the method, an imaging-recognition-reconstruction-evaluation integrated workflow is constructed, and a full-chain closed loop from nanoscale real three-dimensional data acquisition to intelligent recognition, three-dimensional reconstruction and quantitative analysis is realized.

Provided is a focused ion beam device capable of exhausting gas remaining in a nozzle. A focused ion beam device (100) for processing a sample (S) by irradiating the sample (S) with an ion beam comprises: a nozzle (42) for blowing a gas (2) for forming a deposition film to the sample (S) from an outlet (422); and a tank for supplying the gas (2) into the nozzle (42), the nozzle (42) having an exhaust hole (426) for exhausting the gas (2) in the nozzle (42).

A carbon material and a preparation method therefor and a use thereof. The carbon material has pores, and the pore volume of micropores among the pores is greater than or equal to 0.05 cm3 / g. The carbon material contains a doping element, and the doping element includes at least one of nitrogen, phosphorus, arsenic, oxygen, sulfur, selenium, and tellurium. The internal doping concentration of the doping element in the carbon material is Q1 wt%, wherein Q1<8. The surface doping concentration of the doping element in the carbon material is Q2 wt%, wherein 10≤Q2≤25. Q1 wt% and Q2 wt% are obtained by means of the following test method: taking a sample of m1 g from the carbon material, wherein m1≥10; using a scanning electron microscope-energy dispersive spectrometer to test the sample to obtain Q2 wt%; and using a focused ion beam instrument to perform cross-section treatment on the sample, and using the scanning electron microscope-energy dispersive spectrometer to test the cross-section of the sample to obtain Q1 wt%.

The invention belongs to the technical field of thermal expansion coefficient measurement, and relates to a micro-scale material thermal expansion coefficient measurement method and system based on in-situ video analysis, and the method comprises the following steps: 1, extracting a micron-sized sample from any position of a target material by using a focused ion beam; 2, recording a dynamic video of the heating deformation process of the sample by using an electron microscope; 3, performing frame-by-frame image processing on the dynamic video, and extracting pixel data of length, width and area of the sample; 4, converting the pixel data into an actual physical size, recording temperature-time data, and associating a video frame with a corresponding temperature value; 5, calculating the thermal expansion coefficient of the material based on the temperature-deformation curve; the problems that an existing thermal expansion coefficient measuring method is complex in operation and insufficient in accuracy and universality are solved, and particularly, higher thermal expansion coefficient measuring precision and reliability are achieved for micro-scale materials; the requirements on high-precision and high-throughput material testing in the fields of modern chips, micro-nano devices and the like can be met.

The invention belongs to the technical field of ultra-precision machining, and discloses a preparation method of a transmission electron microscope (TEM) sample of a cutting edge of a single-point diamond cutter, a Pt protective layer is deposited at the worn part of the cutting edge, the damage of a focused ion beam to the surface morphology of a notch when the sample is cut is reduced, and the TEM sample capable of observing the surface morphology and internal defects of the cutting edge at the same time is prepared. The method comprises the steps of pretreating a sample, placing the sample, covering a protective layer, etching the sample, transferring the sample, thinning the sample and the like. According to the TEM sample, the Pt protection layer is introduced in the focused ion beam machining process, damage to the surface morphology of the notch when the sample is cut by the focused ion beam is reduced, and the TEM sample with the cutting edge surface morphology and internal defects capable of being observed at the same time is prepared. According to the method, the surface morphology of the sample can be effectively protected, meanwhile, characterization of the internal defects of the cutting edge is achieved, and the method has important application value.

The invention discloses a preparation method of a heterostructure transmission sample, and the method comprises the steps: fixing a heterostructure on a supporting column, the heterostructure comprises a substrate, a conductive column and a plurality of device layers, the substrate comprises a first surface and a second surface which are opposite to each other, and the conductive column extends into the substrate from the first surface; the plurality of device layers are sequentially stacked on the first surface; the extension direction of the conductive column is perpendicular to the length direction of the supporting column. And a focused ion beam is adopted to etch the heterostructure so as to reduce the thickness of the heterostructure, and the included angle between the incident direction of the focused ion beam and the extension direction of the conductive column is an obtuse angle. According to the technical scheme, the curtain effect generated by thinning of the heterostructure is weakened.

The invention provides a three-dimensional porous medium generation method based on a random generation method, and belongs to the technical field of three-dimensional structure generation. The method comprises the following steps of: firstly, specifying porous medium parameters needing to be generated by a user; secondly, placing a growth core in the porous medium domain, and growing until the required porosity is met; and thirdly, smoothing the edge of the porous medium by using a filter. And finally, modeling the porous medium data. Compared with a computed tomography technology and a focused ion beam scanning electron microscope technology, the method has the advantages that the three-dimensional porous medium structures with similar quality can be obtained without professional instruments, and the three-dimensional porous medium structures meeting requirements can be generated in a very short time; a user can obtain a required three-dimensional porous medium structure by adjusting different parameters.

The dual focused ion beam and scanning electron beam system includes an electron source that generates an electron beam and an ion source that generates an ion beam. The electron beam column directs an electron beam at a normal angle relative to a top surface of the stage. An ion beam column directs the ion beam at the stage. The ion beam is at an angle relative to the electron beam. A detector receives the electron beam reflected from the wafer on the stage.

A focused ion beam lens column (17) of this charged particle beam device includes an ion source (41) and an ion optics (42). The ion optics (42) includes a diaphragm member (54b) provided with a plurality of through-holes that are switched in order to cause a portion of a beam of the ions (an ion beam) generated by the ion source (41) to pass therethrough. Switching is performed to select any of the plurality of through-holes while the optical conditions of the ion optics (42) are maintained in a predetermined projection mode (second projection mode). The plurality of through-holes includes fine round holes for observation that are positioned in the center of the ion beam, first rectangular holes for processing that are positioned off the center of the ion beam, and second rectangular holes for observation and processing that are positioned off the center of the ion beam.

The invention relates to a transmission electron microscope sample and a preparation method thereof. The method comprises the following steps: determining a target area on a sample under a scanning electron microscope; forming a mark in a target area of the sample by using electron beam induced deposition, and determining a front cutter stopping position and a back cutter stopping position; forming a protective layer on the surface of the target area; and thinning the sample and the protective layer from the front side to the front side cutter stop position based on the mark by using a focused ion beam, and thinning the sample and the protective layer from the back side to the back side cutter stop position based on the mark by using the focused ion beam, so as to obtain the transmission electron microscope sample. The safety and the success rate of the preparation process can be effectively improved when the sample wafer is prepared.

The utility model discloses an objective table structure for chip focused ion beam experiment detection, which relates to the technical field of chip experiment detection and comprises an objective table, the objective table is plate-shaped, one side of the objective table is provided with a mounting groove, and the mounting groove is in a square groove shape; the experiment table is in a disc shape, the experiment table is arranged on the objective table, the experiment table is detachably connected with the objective table, and the experiment table is used for performing section sample preparation and sheet preparation on an experiment chip; the accessory mounting assembly comprises an accessory mounting table and a mounting base; and a clamping piece. The molybdenum net is bent by the clamping pieces to abut against the clamping grooves, so that the molybdenum net is fixed and limited, the effect of limiting and fixing the position of the molybdenum net is guaranteed, meanwhile, the clamping pieces are used for elastically clamping the molybdenum net at the clamping grooves, and the position can be adjusted when the position needs to be adjusted; and the defect that in the prior art, the limiting and fixing effect on the molybdenum net is poor is effectively overcome.

The invention relates to a beam gate and centering unit integrated focused ion beam micro-nano machining system and an ion beam control method. The focused ion beam micro-nano machining system integrating the beam brake and the centering units comprises a first centering unit (3), a second centering unit (4), a Faraday cup (5) and a control unit, and the control unit is electrically connected with the first centering unit (3) and the second centering unit (4). The control unit is used for controlling the first centering unit (3) and the second centering unit (4) to form a deflection electric field. According to the focused ion beam micro-nano machining system integrating the beam gate and the centering units, the centering unit located on the lower portion is used as the beam gate by means of the superposing performance of electric signals, and integration of the beam gate and the centering units is achieved; rapid closing of the ion beam under high-voltage driving and high-precision centering and axis closing of the ion beam under low-voltage driving can be realized in the same unit, and the complexity of an ion optical system and circuit control is reduced.

The invention relates to an analysis method for accurately positioning a coated plate surface plaque defect substrate, and belongs to the technical field of coated plate surface quality defect analysis. The method comprises the steps that a focused ion beam method is used for conducting multi-point positioning cutting on the spot defect position of a pretreated coated plate sample, the number of cutting points for multi-point positioning cutting is not less than 3, and the cutting depth of each cutting point is larger than the coating thickness of the coated plate sample; connecting the cutting points to form a multi-point connecting area, so as to obtain a to-be-analyzed coated plate sample; carrying out microstructure analysis on the multi-point connection line area to obtain a first image; carrying out micro-topography analysis on a multi-point connecting line area corresponding to the substrate sample after the surface plating layer of the to-be-analyzed plating plate sample is removed, so as to obtain a second image; and according to the first image and the second image, analyzing the cause of the plaque defect on the surface of the plating layer of the plating plate sample. The method can accurately position the position of the substrate corresponding to the plaque defect, so that the reason of the plaque defect on the surface of the coating can be accurately analyzed.

The invention discloses a porous transmission layer and a preparation method and application thereof, and relates to the technical field of water electrolysis hydrogen production. The preparation method of the porous transmission layer comprises the following steps: S1, performing etching treatment on at least part of the surface of a base material by using a focused ion beam so as to form arrayed grooves, and obtaining a to-be-deposited base material; and S2, a non-noble metal layer and a noble metal layer are sequentially deposited on the surface of the to-be-deposited base material, and the porous transmission layer is obtained. The porous transmission layer can effectively transmit gas and moisture required by reaction, reduce interface contact resistance, improve conductivity and guarantee long-term stable operation and high-efficiency performance of the proton exchange membrane electrolytic cell.

The invention relates to the technical field of in-situ detection of electron microscopes, in particular to a one-stop four-dimensional transmission scanning focused ion beam double-beam electron microscope, which comprises a vacuum cavity provided with a vacuum cavity cover; a sample table is arranged on the inner side of the vacuum cavity cover; the electron beam, the ion beam, the manipulator, the sample holder and the gas injection system are mounted on the vacuum cavity through the multifunctional in-situ sealing flange; the system further comprises a 4D STEM detector. According to the invention, electron beam observation, ion beam processing, four-dimensional scanning transmission electron microscope imaging information acquisition and in-situ electric, optical, thermal, force and other external field loading functions are integrated, and scanning electron microscope imaging, transmission electron microscope sample preparation and in-situ 4D STEM diffraction information acquisition under multi-field combined application can be carried out on a sample in one device. One-stop full-scale multi-field combined application detection is realized, the test result is prevented from being influenced by contact with air, water and other external environments in the sample transfer process, and meanwhile, the test efficiency is remarkably improved.

The application provides a yttrium barium copper oxide photonic crystal and a preparation method thereof. 7‑x The photonic crystal structure is composed of periodic yttrium barium copper oxide (YBa2Cu3O 7‑x ) superconducting material circular crystal columns, the lattice constant is 2630nm, and the radius of the circular crystal column is 500nm. The photonic crystal can change the position and width of the band gap by changing the light incidence angle, so that the middle infrared band gap is realized. The photonic crystal is prepared by adopting a magnetron sputtering method to prepare a yttrium barium copper oxide film on a strontium titanate single crystal substrate, and then adopting a focused ion beam method to process the yttrium barium copper oxide film into a periodic nanostructure composed of yttrium barium copper oxide circular crystal columns, so that the yttrium barium copper oxide photonic crystal is obtained. The preparation method of the yttrium barium copper oxide photonic crystal is simple and easy to control.

The invention relates to a non-uniform D-shaped focused ion beam. The method includes: generating a charged particle beam with a charged particle beam source and directing the charged particle beam to a target along a beam axis of a charged particle beam column; directing the charged particle beam through an elongated aperture positioned offset relative to the beam axis; and focusing the beam to the target to produce an asymmetric intensity cross-section of the beam, wherein the cross-section has a sharp intensity edge at the target based on the offset elongated aperture.

The invention discloses a preparation method of an extremely-low-activation neutron irradiation micro-nano sample, which comprises the following steps: S1, according to activation characteristics of a selected material, calculating a micro-nano sample volume critical value which can be reduced to a low level without surface radioactivity of the selected material; s2, selecting a low-activation single crystal material as a single crystal substrate; s3, performing pit digging treatment on the single crystal substrate by using a focused ion beam technology to form one or more pits of which the volume is smaller than the volume critical value of the micro-nano sample; and S4, preparing one or more micro-nano samples matched with the pits by using a focused ion beam technology, and welding the micro-nano samples into the pits. The preparation method has the advantages that the activation level is reduced, the efficiency is high, the experiment safety is enhanced, and the application range is wide.

The invention discloses a transmission electron microscope sample preparation method for in-situ measurement of reliability of a three-terminal device, and mainly solves the problems of difficult electrode connection and heavy ion beam damage in the prior art. According to the implementation scheme, a to-be-tested device is placed in a focused ion beam scanning electron microscope; adjusting the image to determine a sampling position; beveling the to-be-tested device by using an ion beam to expose an electrode section; depositing a Pt layer between the source electrode and the grid electrode of the device, and leading out the grid electrode; the SiO2 layer is deposited on the Pt layer, so that the damage of ion beams to a sample is reduced; transferring the sample sheet from the device to a micro electro mechanical system chip; depositing a Pt layer at the contact part of the sample sheet and the micro electro mechanical system chip again, and connecting the sample sheet with the chip; carrying out selective etching on the sample sheet and the chip so as to enable three-terminal electrodes of the sample sheet to be disconnected mutually; the sample sheet is thinned to be electronically transparent by ions. The method has the characteristics of high efficiency and visualization, is low in cost and high in timeliness, and can be used for observing the microstructure change in real time when the three-terminal device of the transistor degenerates and fails.

The utility model provides a heat dissipation device for focused ion beam equipment and the focused ion beam equipment. The focused ion beam equipment comprises a machine table, a vacuum cavity and an ion beam system, the vacuum cavity and the ion beam system are located on the machine table, the ion beam system is located above the vacuum cavity, the heat dissipation device comprises an air cooling heat dissipation part and a water cooling heat dissipation part, the air cooling heat dissipation part is installed on the machine table and comprises an air channel and an exhaust fan, and the air channel is provided with an air inlet and an air outlet. The air outlet faces the ion beam system, the air inlet is far away from the ion beam system, and the exhaust fan is installed at the air inlet; the water-cooling heat dissipation part is installed on the machine table and comprises a heat exchange pipe, a circulating pipe, a water-cooling block and a circulating pump. The heat exchange tube is mounted between the vacuum chamber and the machine table; the heat exchange pipe is communicated with the circulating pipe; the circulating pump and the water cooling block are mounted on the circulating pipe; the circulating pump is used for providing power for cooling water to flow in the heat exchange pipe and the circulating pipe, and the water cooling block is used for cooling the cooling water flowing through the water cooling block.

Systems, components, methods, algorithms encoded in media, and techniques for localized hydrogen charging of a sample are described. A method of processing a workpiece in a focused ion beam system can include generating a plasma in an ion source gas comprising hydrogen. The method can include extracting a beam of hydrogen ions from the plasma. The method can include directing the beam toward a region of a workpiece, in accordance with a scan pattern. The method can include charging the region of the workpiece with hydrogen. In some embodiments, the method includes decomposing a hydrogen precursor using a charged particle beam, instead of directly irradiating the workpiece with a hydrogen focused ion beam.

The invention discloses an FIB sample preparation SEM image-oriented chip defect automatic detection method, which comprises the following steps: acquiring a scanning electron microscope image of a chip sample subjected to focused ion beam sample preparation, and carrying out manual labeling to construct a chip defect image data set; preprocessing the data set image to obtain a sample set for training; training a deep learning chip defect detection model based on the sample set to realize automatic identification and positioning of a defect target; inputting a to-be-detected SEM image into the trained detection model to obtain a candidate defect bounding box and a corresponding confidence coefficient and category probability; performing non-maximum suppression on the candidate results of the same defect category, and removing a redundant frame to obtain a final defect detection result; and carrying out statistics on defect targets according to categories based on the final detection result, and generating structured defect statistical data containing image identifiers, defect categories and number. And high-precision automatic detection and positioning of multiple types of defects in the SEM image of the FIB sample are realized.

The application discloses a method for analyzing the existence form of As elements in pyrite based on a combination of multiple methods, which comprises the following steps: S1, selecting pyrite particles containing multiple ring zones as the object to be detected; S2, performing electron probe analysis to circumscribe the further analysis area; S3, judging the substitution property of As to Fe or S to preliminarily determine the existence form of As elements; S4, performing focused ion beam processing and spherical aberration transmission electron microscope analysis to shoot HAADF and ABF images; and S5, analyzing the spherical aberration transmission electron microscope images by using DigitalMicrograph data processing software to analyze the intensity difference of Z contrast microscopic images of different atomic sites and the abnormal atomic space occupation of heavy elements and light elements in the ABF images. The application is based on the combination of electron probe and spherical aberration transmission electron microscope, can finely analyze the existence form of As elements in pyrite from the micron to nanometer scale, and has high reliability and sufficient substantial evidence.

The invention discloses a special electron microscope imaging and focused ion beam processing sample table for optical fibers, and solves the problems that in the prior art, optical fiber electron microscope observation and focused ion beam processing often utilize a traditional electron microscope plane sample table to be matched with conductive adhesive to fix the optical fibers, the conductive adhesive pollutes the surfaces of the optical fibers, optical experiments are inconvenient after cutting off, and the optical fibers are prone to charge accumulation. The device comprises a base, an optical fiber bearing table and optical fiber fixing devices, a V-shaped groove is formed in the top of the optical fiber bearing table and can bear common optical fibers, the cylindrical optical fiber fixing devices are fixed to the two ends of the base, two sets of through fixing holes are symmetrically formed in the lower portion, and the optical fibers penetrate through the fixing holes and are fixed through friction force. The distance from the optical fiber to the top end of the fixing device is 3mm. The optical fiber can be firmly fixed without a conductive adhesive, surface pollution is avoided, redundant optical fibers can be wound and fixed, the length of several meters is reserved, subsequent optical experiments are facilitated, the fixing device can be independently detached, coating treatment is facilitated, use is convenient, and FIB machining whole-process operation is facilitated.

Disclosed are system and method for metrology of 3D structural elements of a wafer by projecting, on a subset of the 3D structural elements, a focused ion beam (FIB) at a predefined diagonal angle, thereby generating a diagonal cut in each of the subset of sites, scanning each of the diagonal cuts using a scanning electron microscope (SEM), generating a reconstruction of the one or more 3D structural elements or a component thereof based on the SEM image and performing metrology measurements on the reconstruction.

Charged-particle beam (CPB) optical systems can include a beam acceptance aperture plate defining a first acceptance aperture and at least one second acceptance aperture, situated with respect to a CPB source so that a first CPB is transmitted by the first acceptance aperture and a second CPB is transmitted by a second acceptance aperture. A CPB lens is situated to receive the first and second CPBs from the beam acceptance aperture plate and direct the first and second CPBs towards a filter aperture plate to transmit selected spectral portion of the second CPB. The selected spectral component of the first CPB can be selectively directed to a workpiece by a beam steering deflector along the same axis. In some examples, the first and second CPBs have different beam currents and only one is directed to a workpiece.