457 results about "Focused ion beam" patented technology

The invention provides a self-adaptive error compensation method and system for focused ion beam equipment, and the method comprises the steps: obtaining a real-time error signal set generated by the focused ion beam equipment in a machining process, training a self-adaptive error compensation model according to the real-time error signal set, and generating an error compensation parameter set; inputting the error compensation parameter set into a control unit of the focused ion beam equipment, and generating a real-time compensation control instruction set; adjusting an ion source parameter and a deflection electrode voltage parameter of the focused ion beam equipment according to the real-time compensation control instruction set, and outputting an adjusted ion beam path parameter set; and performing ion beam processing on the target processing area according to the adjusted ion beam path parameter set, and monitoring morphology feature data of the processed area in real time to verify an error compensation effect. According to the invention, harmful effects caused by thermal effects, electric fields or magnetic fields can be eliminated, and the self-adaptability and long-term reliability of a compensation strategy are ensured.

The invention provides a preparation method of a transmission electron microscope ultrathin sample with a cross section of an electron beam sensitive material, which comprises the following steps: selecting a specific region as a to-be-extracted sample region for the electron beam sensitive material by adopting an electron beam imaging technology; depositing a protective layer on the surface of the to-be-extracted sample area by adopting an electron beam and / or an ion beam; bombarding a to-be-extracted sample area by utilizing a high-energy ion beam, extracting an electron beam sensitive material cross section sample from the to-be-extracted sample area, and fixing the extracted sample to a metal bracket; performing pre-thinning treatment on the extracted sample by using a focused ion beam to obtain a first thinned sample of which the thickness is reduced to be less than a first thickness; and transferring the first thinned sample into a micro-beam fixed-point ion thinning system, and carrying out multi-time stepped low-energy ion beam fine thinning treatment on the first thinned sample by using inert gas ion micro-beams to obtain a second thinned sample which is clean in surface and free of a surface ion damage layer and has the thickness reduced to be less than a second thickness, and taking the second thinned sample as a transmission electron microscope ultrathin sample.

The invention relates to a TEM (Transmission Electron Microscope) detection method for a damaged layer of a silicon wafer, which belongs to the technical field of surface defect analysis of semiconductor silicon wafers and comprises the following steps of: depositing a protective layer on the surface of a wafer, and protecting the surface structure of the wafer during ion beam cutting by using a focused ion beam machine; therefore, the influence of the deformation of the surface structure of the TEM sample on the detection result of the TEM sample is avoided. A relatively flat area is selected in a deposition protection layer, a Pt layer protection layer is uniformly deposited on the surface of the area, and a focused ion beam is used for etching and marking in a target area. A thinning technology is utilized, so that the thickness meets the requirement of TEM observation; the copper net is used as the metal conductive net, so that the basic conductive performance can be met, the stable physical property is achieved, and the effect of supporting and fixing the sample is achieved. And the morphology of the damaged layer is clearly observed by utilizing the high-resolution characteristic of the TEM, so that the quality and success rate of surface damaged layer analysis are improved.

A method comprises: providing FIB and CPB columns with FIB and CPB optical axes coinciding at a wafer surface; in the coincidence arrangement, removing a cross section surface layer of a measurement site of a wafer using the FIB column to make a new cross section accessible for imaging; reducing a working distance between the CPB imaging column and the wafer surface in a direction along the axis of the CPB imaging column; imaging the new cross section at the measurement site of the wafer with the CPB imaging column at the reduced working distance and thus not in the coincidence arrangement; and increasing the working distance between the CPB imaging column and the wafer surface in the direction along the axis of the CPB imaging column until the coincidence arrangement is reached.

The invention provides a hemispherical resonator full spherical surface quality-rigidity combined trimming method and system, and belongs to the field of solid-state vibrating gyroscopes. The invention aims to solve the problem of low trimming efficiency caused by mass and rigidity coupling in the trimming frequency splitting process because etching is not carried out on a full-hemispherical shell in the existing trimming process of the hemispherical harmonic oscillator. A laser Doppler vibration meter is used for obtaining the low-frequency axis, high-frequency axis orientation and frequency splitting decomposition value of a hemispherical resonator, a focused ion beam is controlled to conduct rigidity fine adjustment on the positions of the four high-frequency axes in a high-latitude area, and quality-rigidity coupling fine adjustment is conducted on the positions of the four low-frequency axes in a low-latitude area. Etching on the full-hemispherical shell is realized, the quality and rigidity of the hemispherical harmonic oscillator can be decoupled, and the trimming efficiency of the hemispherical harmonic oscillator is improved; the mass and the rigidity are decoupled through mass-rigidity combined trimming, and the uniformity of the mass and the rigidity of the hemispherical resonator gyroscope is improved; the method has certain universality and can be popularized and used for mass rigidity trimming of harmonic oscillators in different shapes.

The invention discloses an in-situ identification analysis method for superfine non-metallic inclusions in steel, and mainly solves the technical problems that the superfine non-metallic inclusions in the existing steel are difficult to identify and extract and the microstructure and phase composition of the inclusions are difficult to characterize. According to the technical scheme, the method for detecting and analyzing the small-size non-metallic inclusions in the steel by using the scanning electron microscope comprises the following steps: (1) preparing a metallographic sample; 2) preparing a transmission electron microscope sample, and determining an area where the inclusion of the metallographic sample is located by using a scanning electron microscope; carrying out accurate positioning and in-situ micro-nano thinning and cutting on the area where the inclusion of the metallographic sample is located by using a focused ion beam double-beam electron microscope system, and extracting the superfine non-metallic inclusion; and 3) analyzing the ultrafine non-metallic inclusions in the transmission electron microscope sample, and detecting the grain orientation of the ultrafine inclusions by using a transmission-type electron back scattering diffractometer. The method provided by the invention can accurately identify and extract the superfine non-metallic inclusions and the phase composition, components and grain orientation thereof in situ.

The invention relates to a focused ion beam ultrathin section sample preparation pretreatment method for a wafer sample, and belongs to the technical field of wafer material microscopic experiments. The wafer sample preparation pretreatment method provided by the invention comprises the following steps: (1) depositing a metal oxide on the surface of a wafer sample by adopting an atomic layer deposition technology to obtain an ALD layer; (2) coating a curing glue solution on the surface of the ALD layer, and curing to obtain a curing glue layer; and (3) plating a conductive protection layer on the surface of the cured adhesive layer to finish sample preparation pretreatment. The sample preparation pretreatment method disclosed by the invention can well solve the problems of irradiation damage and deformation of a fine structure which is not resistant to electron beam irradiation, curtain effect in a cutting process, unobvious structural boundary in a shooting process and the like in focused ion beam ultrathin section sample preparation, and has good application prospects in the technical field of wafer material microscopic experiments. And the practical value is very high.

In an example, a method includes producing a set of projected sample characterization values associated with each of a plurality of processing axes and identifying a preferred processing axis based on the projected sample characterization values. In another representative example, a method includes extracting a sample specimen, producing a sample image of the sample specimen, identifying a preferred sample tilt angle, and rotating the sample specimen to an orientation corresponding to a preferred sample tilt angle. The method further includes processing the sample specimen to produce a lamella. In another representative example, a system includes a focused ion beam (FIB) system, a sample holder, a stage, and a controller operable to cause the stage to rotate the sample specimen relative to the ion beam axis such that the ion beam approaches the sample specimen along a preferred processing axis.

A magnetic tunnel junction device includes a pillar structure including, from bottom to top, a bottom electrode and a magnetic tunnel junction structure, a top electrode overlying the magnetic tunnel junction structure, and a dielectric metal oxide layer extending from a sidewall of the pillar structure to a sidewall of the top electrode. The magnetic tunnel junction structure contains a reference magnetization layer including a first ferromagnetic material, a tunnel barrier layer, and a free magnetization layer including a second ferromagnetic material. The top electrode includes a metallic material containing a nonmagnetic metal element. The dielectric metal oxide layer may be formed by performing an oxidation process that oxidizes a residual metal film after a focused ion beam etch process, and eliminates conductive paths from surfaces of the pillar structure.

The invention belongs to the technical field of plasmas, and particularly relates to a magnetic lens constraint focusing reaction ion beam source which can obtain a focusing ion beam with ion energy in normal distribution and introduce reaction gas to realize rapid removal of a damaged layer on the surface of an optical element. According to the technical scheme, the ion source comprises an anode, an outer cathode arranged above the anode and a center cathode arranged in the middle of the ion source, the anode, the outer cathode and the center cathode are special-shaped circular rings, an ion beam leading-out gap is formed between the outer cathode and the center cathode, an ionization area is arranged among the anode, the outer cathode and the center cathode, and the ionization area is arranged between the anode and the center cathode. An ionization magnetic coil is arranged on the outer side of the anode, a working gas leading-in device is arranged below the center cathode, a magnetic lens center magnetic pole is arranged above the center cathode, a reaction gas leading-out hole is formed in the middle of the magnetic lens center magnetic pole, and reaction gas is led into the magnetic lens center magnetic pole through the center cathode by a gas guide pipe. A magnetic lens coil is arranged on the periphery of the magnetic lens center magnetic pole, and a magnetic lens outer magnetic pole is arranged above the magnetic lens coil.

The invention relates to the technical field of semiconductor manufacturing, in particular to a sample with a pore structure, and provides a thinning method for preparing a pore sample by using a focused ion beam. According to the method, the front face of a target sample is thinned through FIB, then the back face of the target sample is thinned, the problem that in the prior art, a TEM target sheet generated when the front face and the back face of the target sample are thinned alternately is not of a pore internal structure is solved, and the technical effects of the method are that the efficiency of preparing the pore sample can be improved; and the picture shooting quality of the pore structure sample is improved.

The invention provides a wafer-level layering failure analysis and sample preparation method of a chip, which comprises the following steps of: preprocessing a chip sample, positioning crystal grains, grinding and thinning according to the plane projection of the crystal grains to carry out primary processing, cutting a target sample, continuously carrying out plane grinding to remove a ball grid array (BGA) solder ball, and preparing the wafer-level layering failure analysis and sample preparation method of the wafer-level layering failure analysis and sample preparation method of the chip. The method comprises the following steps of: adding the raw materials into a first chemical reagent, a second chemical reagent and a third chemical reagent in sequence to react so as to release the residual stress of the packaging structure to the greatest extent, reduce the damage to failure morphology in a sample preparation process and obtain separated bare crystal grains, and finally scanning and analyzing the bare crystal grains by using an ultrasonic acoustic microscope. The method is used for determining whether the advanced technology chip has potential poor layering of the low-dielectric-constant insulating layer and determining the specific position of the poor layering. According to the invention, the technical problem of sample damage caused by external stress in the analysis process can be effectively improved, and subsequent accurate focused ion beam FIB and other physical destructive analysis can be conveniently carried out on the failure position.

An apparatus comprises: a focused ion beam (FIB) column within a vacuum chamber configured to direct ions comprising a mixture of protons and non-hydrogen ions onto a sample, wherein the kinetic energy of ions of the mixture is not greater than 50 kilo-electron-Volts (keV); and an X-ray detector configured to detect and measure X-rays that are emitted from the sample in response to the impingement of the protons and non-hydrogen ions onto the sample. The apparatus may further comprise an electron microscope column within the vacuum chamber configured to direct and focus a beam of electrons onto the sample and to detect secondary electrons or backscattered electrons that are emitted from the sample in response to the impingement of the beam of electrons onto the sample. The electron microscope may generate an image of a sample area that is milled by the FIB column.

The invention discloses a method for measuring residual stress of a microstructure with a large slenderness ratio, which comprises the following steps of: etching a rectangular grating on the surface of a sample by adopting a focused ion beam technology, and synchronously marking an X-ray detection point; the integrated white light interferometer generates a curvature change curve in real time along a spiral track scanning path, and processes data by applying an empirical mode decomposition algorithm; a six-axis robot control system is used for compensating the position offset of the mark point, the incident angle of the X-ray is adjusted to adapt to the warping surface geometry, and multi-angle stress detection is carried out; establishing a mapping relation through grating-X-ray joint calibration, and generating a two-dimensional stress distribution diagram by using an interpolation algorithm; according to the grating curvature stability and the X-ray diffraction peak signal-to-noise ratio, the weight is dynamically distributed, a three-dimensional residual stress cloud picture is output, and a high-risk area is marked, so that the residual stress analysis capability of a material with a complex shape is effectively improved, more accurate and comprehensive stress distribution information is provided, and the potential material failure problem can be identified and prevented.

The invention provides a rock mass internal pore intelligent characterization and three-dimensional reconstruction method and system, and relates to the technical field of rock mass internal structure analysis, and the method comprises the steps: obtaining a two-dimensional image sequence of a rock core in a target rock mass through a focused ion beam scanning electron microscope slicing-imaging sequence working mode; performing pore segmentation on each two-dimensional image in the two-dimensional image sequence by using the pore segmentation network to obtain a plurality of pore two-dimensional segmentation maps; on the basis of the pore two-dimensional segmentation map, constructing three-dimensional binary volume data of the pores according to a slice sequence; according to the three-dimensional binary volume data, performing three-dimensional reconstruction and structural characterization on rock core pores; according to the method, an imaging-recognition-reconstruction-evaluation integrated workflow is constructed, and a full-chain closed loop from nanoscale real three-dimensional data acquisition to intelligent recognition, three-dimensional reconstruction and quantitative analysis is realized.

Various examples of the disclosure relate to the measurement of the tilt and / or height of a sample to be examined in the case of particle microscope systems, especially electron beam microscopes having an additional column for creating a focused ion beam. Optical detection systems are used, for example according to the autocollimation principle.

Provided is a focused ion beam device capable of exhausting gas remaining in a nozzle. A focused ion beam device (100) for processing a sample (S) by irradiating the sample (S) with an ion beam comprises: a nozzle (42) for blowing a gas (2) for forming a deposition film to the sample (S) from an outlet (422); and a tank for supplying the gas (2) into the nozzle (42), the nozzle (42) having an exhaust hole (426) for exhausting the gas (2) in the nozzle (42).

A carbon material and a preparation method therefor and a use thereof. The carbon material has pores, and the pore volume of micropores among the pores is greater than or equal to 0.05 cm3 / g. The carbon material contains a doping element, and the doping element includes at least one of nitrogen, phosphorus, arsenic, oxygen, sulfur, selenium, and tellurium. The internal doping concentration of the doping element in the carbon material is Q1 wt%, wherein Q1<8. The surface doping concentration of the doping element in the carbon material is Q2 wt%, wherein 10≤Q2≤25. Q1 wt% and Q2 wt% are obtained by means of the following test method: taking a sample of m1 g from the carbon material, wherein m1≥10; using a scanning electron microscope-energy dispersive spectrometer to test the sample to obtain Q2 wt%; and using a focused ion beam instrument to perform cross-section treatment on the sample, and using the scanning electron microscope-energy dispersive spectrometer to test the cross-section of the sample to obtain Q1 wt%.

The invention belongs to the technical field of thermal expansion coefficient measurement, and relates to a micro-scale material thermal expansion coefficient measurement method and system based on in-situ video analysis, and the method comprises the following steps: 1, extracting a micron-sized sample from any position of a target material by using a focused ion beam; 2, recording a dynamic video of the heating deformation process of the sample by using an electron microscope; 3, performing frame-by-frame image processing on the dynamic video, and extracting pixel data of length, width and area of the sample; 4, converting the pixel data into an actual physical size, recording temperature-time data, and associating a video frame with a corresponding temperature value; 5, calculating the thermal expansion coefficient of the material based on the temperature-deformation curve; the problems that an existing thermal expansion coefficient measuring method is complex in operation and insufficient in accuracy and universality are solved, and particularly, higher thermal expansion coefficient measuring precision and reliability are achieved for micro-scale materials; the requirements on high-precision and high-throughput material testing in the fields of modern chips, micro-nano devices and the like can be met.

The invention belongs to the technical field of ultra-precision machining, and discloses a preparation method of a transmission electron microscope (TEM) sample of a cutting edge of a single-point diamond cutter, a Pt protective layer is deposited at the worn part of the cutting edge, the damage of a focused ion beam to the surface morphology of a notch when the sample is cut is reduced, and the TEM sample capable of observing the surface morphology and internal defects of the cutting edge at the same time is prepared. The method comprises the steps of pretreating a sample, placing the sample, covering a protective layer, etching the sample, transferring the sample, thinning the sample and the like. According to the TEM sample, the Pt protection layer is introduced in the focused ion beam machining process, damage to the surface morphology of the notch when the sample is cut by the focused ion beam is reduced, and the TEM sample with the cutting edge surface morphology and internal defects capable of being observed at the same time is prepared. According to the method, the surface morphology of the sample can be effectively protected, meanwhile, characterization of the internal defects of the cutting edge is achieved, and the method has important application value.

The invention relates to a nanometer photoetching method based on a focused ion beam-scanning electron microscope double-beam system, and relates to the technical field of etching processes, and the method comprises the following steps: providing a substrate; forming a glue layer on the substrate; forming a conductor layer on the adhesive layer; placing the substrate in a focused ion beam-scanning electron microscope double-beam system, determining a graphic window setting area through a scanning electron microscope, and etching the conductor layer in the graphic window setting area through a focused ion beam to form a graphic window; and performing an etching process by taking the conductor layer as a mask, and etching the adhesive layer through the pattern window until the substrate is exposed so as to form a first etching opening. Therefore, the accuracy of the graph is improved.

The invention discloses a method for testing the thickness of a surface oxide layer of micron-sized boron particles, which comprises the following steps of: (1) preparing the micron-sized boron particles, and selecting boron powder particles with the particle size of 100nm-50mu m; (2) preparing a transmission sample of micron-sized boron particles, depositing a Pt protective layer on the surfaces of the particles by using a focused ion beam system before preparing a boron powder transmission sample, protecting an oxidation shell layer on the surfaces of the boron particles, and thinning in a selected area when thinning a slice to ensure the mechanical strength of the slice; and (3) transmission characterization of the micron-sized boron particles: the thickness and measurement error of the oxide layer of the boron particles are calculated by combining transmission images and energy spectrum comprehensive analysis, and the method has the advantages of high sample preparation success rate, high characterization accuracy, high characterization precision and the like.

The invention relates to the technical field of semiconductor manufacturing, in particular to a pore sample with large depth, and provides a method for observing a bottom structure by preparing the pore sample through a focused ion beam (FIB). According to the method, by means of filling special resin for ion thinning into pores, introducing an improved back-cutting technology and the like, the problems of pore structure deformation and large damage of focused ion beams to the interiors of the pores during sample preparation in the prior art are solved; the method has the technical effects that the stability of the bottom structure of the pore sample can be improved, and damage to the pore structure in the thinning process is avoided.

The invention discloses a method for analyzing an existence form of an As element in pyrite based on multi-method combination. The method comprises the following steps: S1, selecting pyrite particles containing multi-stage annular bands as a to-be-detected object; s2, carrying out electron probe analysis, and delineating a further analysis area; s3, the substitution property of As to Fe or S is judged, and the existence form of the As element is preliminarily judged; s4, performing focused ion beam processing and spherical aberration transmission electron microscope analysis, and shooting HAADF and ABF images; and S5, analyzing the spherical aberration transmission electron microscope image by using DigilMicrograph data processing software, and analyzing the intensity difference of Z-contrast microscopic images of different atomic sites and the atomic space occupation abnormal conditions of heavy elements and light elements in the ABF image. Based on the combination of the electron probe and the spherical aberration transmission electron microscope, the existence form of the As element in the pyrite is finely analyzed from the micron scale to the nanometer scale, the credibility is high, and the substantive evidence is sufficient.

The invention discloses a preparation method of a heterostructure transmission sample, and the method comprises the steps: fixing a heterostructure on a supporting column, the heterostructure comprises a substrate, a conductive column and a plurality of device layers, the substrate comprises a first surface and a second surface which are opposite to each other, and the conductive column extends into the substrate from the first surface; the plurality of device layers are sequentially stacked on the first surface; the extension direction of the conductive column is perpendicular to the length direction of the supporting column. And a focused ion beam is adopted to etch the heterostructure so as to reduce the thickness of the heterostructure, and the included angle between the incident direction of the focused ion beam and the extension direction of the conductive column is an obtuse angle. According to the technical scheme, the curtain effect generated by thinning of the heterostructure is weakened.

The invention provides a three-dimensional porous medium generation method based on a random generation method, and belongs to the technical field of three-dimensional structure generation. The method comprises the following steps of: firstly, specifying porous medium parameters needing to be generated by a user; secondly, placing a growth core in the porous medium domain, and growing until the required porosity is met; and thirdly, smoothing the edge of the porous medium by using a filter. And finally, modeling the porous medium data. Compared with a computed tomography technology and a focused ion beam scanning electron microscope technology, the method has the advantages that the three-dimensional porous medium structures with similar quality can be obtained without professional instruments, and the three-dimensional porous medium structures meeting requirements can be generated in a very short time; a user can obtain a required three-dimensional porous medium structure by adjusting different parameters.

The dual focused ion beam and scanning electron beam system includes an electron source that generates an electron beam and an ion source that generates an ion beam. The electron beam column directs an electron beam at a normal angle relative to a top surface of the stage. An ion beam column directs the ion beam at the stage. The ion beam is at an angle relative to the electron beam. A detector receives the electron beam reflected from the wafer on the stage.

A focused ion beam lens column (17) of this charged particle beam device includes an ion source (41) and an ion optics (42). The ion optics (42) includes a diaphragm member (54b) provided with a plurality of through-holes that are switched in order to cause a portion of a beam of the ions (an ion beam) generated by the ion source (41) to pass therethrough. Switching is performed to select any of the plurality of through-holes while the optical conditions of the ion optics (42) are maintained in a predetermined projection mode (second projection mode). The plurality of through-holes includes fine round holes for observation that are positioned in the center of the ion beam, first rectangular holes for processing that are positioned off the center of the ion beam, and second rectangular holes for observation and processing that are positioned off the center of the ion beam.

The invention relates to a transmission electron microscope sample and a preparation method thereof. The method comprises the following steps: determining a target area on a sample under a scanning electron microscope; forming a mark in a target area of the sample by using electron beam induced deposition, and determining a front cutter stopping position and a back cutter stopping position; forming a protective layer on the surface of the target area; and thinning the sample and the protective layer from the front side to the front side cutter stop position based on the mark by using a focused ion beam, and thinning the sample and the protective layer from the back side to the back side cutter stop position based on the mark by using the focused ion beam, so as to obtain the transmission electron microscope sample. The safety and the success rate of the preparation process can be effectively improved when the sample wafer is prepared.

The utility model discloses an objective table structure for chip focused ion beam experiment detection, which relates to the technical field of chip experiment detection and comprises an objective table, the objective table is plate-shaped, one side of the objective table is provided with a mounting groove, and the mounting groove is in a square groove shape; the experiment table is in a disc shape, the experiment table is arranged on the objective table, the experiment table is detachably connected with the objective table, and the experiment table is used for performing section sample preparation and sheet preparation on an experiment chip; the accessory mounting assembly comprises an accessory mounting table and a mounting base; and a clamping piece. The molybdenum net is bent by the clamping pieces to abut against the clamping grooves, so that the molybdenum net is fixed and limited, the effect of limiting and fixing the position of the molybdenum net is guaranteed, meanwhile, the clamping pieces are used for elastically clamping the molybdenum net at the clamping grooves, and the position can be adjusted when the position needs to be adjusted; and the defect that in the prior art, the limiting and fixing effect on the molybdenum net is poor is effectively overcome.