166 results about "Focused ion beam" patented technology

The invention provides a rock mass internal pore intelligent characterization and three-dimensional reconstruction method and system, and relates to the technical field of rock mass internal structure analysis, and the method comprises the steps: obtaining a two-dimensional image sequence of a rock core in a target rock mass through a focused ion beam scanning electron microscope slicing-imaging sequence working mode; performing pore segmentation on each two-dimensional image in the two-dimensional image sequence by using the pore segmentation network to obtain a plurality of pore two-dimensional segmentation maps; on the basis of the pore two-dimensional segmentation map, constructing three-dimensional binary volume data of the pores according to a slice sequence; according to the three-dimensional binary volume data, performing three-dimensional reconstruction and structural characterization on rock core pores; according to the method, an imaging-recognition-reconstruction-evaluation integrated workflow is constructed, and a full-chain closed loop from nanoscale real three-dimensional data acquisition to intelligent recognition, three-dimensional reconstruction and quantitative analysis is realized.

The invention relates to a transmission electron microscope sample and a preparation method thereof. The method comprises the following steps: determining a target area on a sample under a scanning electron microscope; forming a mark in a target area of the sample by using electron beam induced deposition, and determining a front cutter stopping position and a back cutter stopping position; forming a protective layer on the surface of the target area; and thinning the sample and the protective layer from the front side to the front side cutter stop position based on the mark by using a focused ion beam, and thinning the sample and the protective layer from the back side to the back side cutter stop position based on the mark by using the focused ion beam, so as to obtain the transmission electron microscope sample. The safety and the success rate of the preparation process can be effectively improved when the sample wafer is prepared.

The invention discloses a porous transmission layer and a preparation method and application thereof, and relates to the technical field of water electrolysis hydrogen production. The preparation method of the porous transmission layer comprises the following steps: S1, performing etching treatment on at least part of the surface of a base material by using a focused ion beam so as to form arrayed grooves, and obtaining a to-be-deposited base material; and S2, a non-noble metal layer and a noble metal layer are sequentially deposited on the surface of the to-be-deposited base material, and the porous transmission layer is obtained. The porous transmission layer can effectively transmit gas and moisture required by reaction, reduce interface contact resistance, improve conductivity and guarantee long-term stable operation and high-efficiency performance of the proton exchange membrane electrolytic cell.

The invention relates to the technical field of in-situ detection of electron microscopes, in particular to a one-stop four-dimensional transmission scanning focused ion beam double-beam electron microscope, which comprises a vacuum cavity provided with a vacuum cavity cover; a sample table is arranged on the inner side of the vacuum cavity cover; the electron beam, the ion beam, the manipulator, the sample holder and the gas injection system are mounted on the vacuum cavity through the multifunctional in-situ sealing flange; the system further comprises a 4D STEM detector. According to the invention, electron beam observation, ion beam processing, four-dimensional scanning transmission electron microscope imaging information acquisition and in-situ electric, optical, thermal, force and other external field loading functions are integrated, and scanning electron microscope imaging, transmission electron microscope sample preparation and in-situ 4D STEM diffraction information acquisition under multi-field combined application can be carried out on a sample in one device. One-stop full-scale multi-field combined application detection is realized, the test result is prevented from being influenced by contact with air, water and other external environments in the sample transfer process, and meanwhile, the test efficiency is remarkably improved.

The application provides a yttrium barium copper oxide photonic crystal and a preparation method thereof. 7‑x The photonic crystal structure is composed of periodic yttrium barium copper oxide (YBa2Cu3O 7‑x ) superconducting material circular crystal columns, the lattice constant is 2630nm, and the radius of the circular crystal column is 500nm. The photonic crystal can change the position and width of the band gap by changing the light incidence angle, so that the middle infrared band gap is realized. The photonic crystal is prepared by adopting a magnetron sputtering method to prepare a yttrium barium copper oxide film on a strontium titanate single crystal substrate, and then adopting a focused ion beam method to process the yttrium barium copper oxide film into a periodic nanostructure composed of yttrium barium copper oxide circular crystal columns, so that the yttrium barium copper oxide photonic crystal is obtained. The preparation method of the yttrium barium copper oxide photonic crystal is simple and easy to control.

The invention relates to a non-uniform D-shaped focused ion beam. The method includes: generating a charged particle beam with a charged particle beam source and directing the charged particle beam to a target along a beam axis of a charged particle beam column; directing the charged particle beam through an elongated aperture positioned offset relative to the beam axis; and focusing the beam to the target to produce an asymmetric intensity cross-section of the beam, wherein the cross-section has a sharp intensity edge at the target based on the offset elongated aperture.

Systems, components, methods, algorithms encoded in media, and techniques for localized hydrogen charging of a sample are described. A method of processing a workpiece in a focused ion beam system can include generating a plasma in an ion source gas comprising hydrogen. The method can include extracting a beam of hydrogen ions from the plasma. The method can include directing the beam toward a region of a workpiece, in accordance with a scan pattern. The method can include charging the region of the workpiece with hydrogen. In some embodiments, the method includes decomposing a hydrogen precursor using a charged particle beam, instead of directly irradiating the workpiece with a hydrogen focused ion beam.

The invention discloses an FIB sample preparation SEM image-oriented chip defect automatic detection method, which comprises the following steps: acquiring a scanning electron microscope image of a chip sample subjected to focused ion beam sample preparation, and carrying out manual labeling to construct a chip defect image data set; preprocessing the data set image to obtain a sample set for training; training a deep learning chip defect detection model based on the sample set to realize automatic identification and positioning of a defect target; inputting a to-be-detected SEM image into the trained detection model to obtain a candidate defect bounding box and a corresponding confidence coefficient and category probability; performing non-maximum suppression on the candidate results of the same defect category, and removing a redundant frame to obtain a final defect detection result; and carrying out statistics on defect targets according to categories based on the final detection result, and generating structured defect statistical data containing image identifiers, defect categories and number. And high-precision automatic detection and positioning of multiple types of defects in the SEM image of the FIB sample are realized.

The invention discloses a special electron microscope imaging and focused ion beam processing sample table for optical fibers, and solves the problems that in the prior art, optical fiber electron microscope observation and focused ion beam processing often utilize a traditional electron microscope plane sample table to be matched with conductive adhesive to fix the optical fibers, the conductive adhesive pollutes the surfaces of the optical fibers, optical experiments are inconvenient after cutting off, and the optical fibers are prone to charge accumulation. The device comprises a base, an optical fiber bearing table and optical fiber fixing devices, a V-shaped groove is formed in the top of the optical fiber bearing table and can bear common optical fibers, the cylindrical optical fiber fixing devices are fixed to the two ends of the base, two sets of through fixing holes are symmetrically formed in the lower portion, and the optical fibers penetrate through the fixing holes and are fixed through friction force. The distance from the optical fiber to the top end of the fixing device is 3mm. The optical fiber can be firmly fixed without a conductive adhesive, surface pollution is avoided, redundant optical fibers can be wound and fixed, the length of several meters is reserved, subsequent optical experiments are facilitated, the fixing device can be independently detached, coating treatment is facilitated, use is convenient, and FIB machining whole-process operation is facilitated.

Disclosed are system and method for metrology of 3D structural elements of a wafer by projecting, on a subset of the 3D structural elements, a focused ion beam (FIB) at a predefined diagonal angle, thereby generating a diagonal cut in each of the subset of sites, scanning each of the diagonal cuts using a scanning electron microscope (SEM), generating a reconstruction of the one or more 3D structural elements or a component thereof based on the SEM image and performing metrology measurements on the reconstruction.

The invention provides a solid material surface processing method which comprises the following steps: S1, arranging a conductive film layer on the surface of a solid material to obtain a semi-finished product A; s2, a groove is formed in the surface of the semi-finished product A with the ion beam current of 0.05-0.5 [mu] A through the focused ion beam technology, and a semi-finished product B is prepared; and S3, removing the conductive film layer on the surface of the semi-finished product B. According to the processing method for the surface of the solid material, the current of the ion beam can be accurately regulated and controlled, so that grooves with different depths are accurately formed in the surface of the solid material, and the bottoms of the grooves protrude towards the notch direction of the grooves. The surface of the finished product prepared by the processing method provided by the invention is provided with nanoscale grooves with different depths, the bottoms of the grooves protrude towards the notch direction of the grooves, and the protrusions at the bottoms of the grooves enable design patterns formed by the grooves to present higher definition and contrast through enhanced optical contrast characteristics, so that the product quality is improved. Good mechanical stability and damage resistance are realized.

The present application relates to the field of transmission electron microscopy characterization of two-dimensional material structure, and particularly to a method for efficiently obtaining cross-section characteristic crystal orientation of two-dimensional material, which is suitable for two-dimensional van der Waals layered material and two-dimensional non-layered material. A focused ion beam microscope (FIB) is used to sample in the direction perpendicular to (or parallel to) the long straight edge of the two-dimensional material edge, and the two-dimensional material sampling direction is parallel to the half-moon-shaped carrier net string length direction for welding, so as to prepare a cross-section sample capable of reflecting atomic layer stacking sequence; the half-moon-shaped carrier net string length direction is placed perpendicular to the TEM sample rod axial direction, and then small-angle tilting is performed to quickly realize sample crystallographic orientation. The present application lays a foundation for efficiently analyzing crystallographic information such as crystal structure, stacking defects and surface reconstruction of the material by observing the cross-section sample of the two-dimensional material.

The invention provides a method for transferring an in-situ transmission sample to a grid for post characterization, and belongs to the technical field of transmission sample processing, and the method comprises the following steps: preparing a metal target sample with a step structure and a deep groove through a focused ion beam micro-nano processing technology, meanwhile, a reusable metal protective cover formed by seamlessly welding a concave cover body and a cover cap with a connecting structure is machined; a metal protective cover is picked up by a transfer tool and covers a metal target sample after an in-situ experiment, an integrated assembly of the metal protective cover and the metal target sample is transferred to a target grid after being fixed, the sample and the protective cover are separated through ion beam excision along the deep groove position, the separated sample is used for post characterization, and the protective cover can be reused after being recycled and trimmed. By designing the reusable protective cover and optimizing the transfer process, the problems that a special carrier for an in-situ experiment is incompatible with a double-tilt transmission electron microscope grid, the surface of a sample is polluted due to Pt welding in the FIB transfer process, and then high-quality characterization after an event is restricted are solved.

The utility model discloses a focused ion beam microscope ion source, which comprises an installation frame, two ion source pins are fixedly connected on the installation frame through openings, one side of each ion source pin is fixedly connected with an emission part, one end among a plurality of emission parts is fixedly connected with a Taylor cone, and the other end among the emission parts is fixedly connected with a focusing lens. A sliding shaft is slidably inserted into the bottom of the mounting frame, a rotating disc is fixedly connected to the bottom end of the sliding shaft, a sealing cover is clamped to the outer side of the rotating disc, a storage pipe sleeves the bottom end of the sealing cover in a threaded mode, a heating wire sleeves the outer wall of the circumference of the storage pipe, a gallium source body is stored in the storage pipe, and a discharging port is formed in the bottom end of the storage pipe. The top end of the Taylor cone penetrates through the discharging opening and is inserted into the storage pipe. The storage tube is stably mounted through the sliding shaft and the sealing cover, so that the storage tube is prevented from falling off, and the stability of the ion source is improved.

An electron microscope system including a sample holder, a shared camera, a correlative light electron microscope (CLEM), a focused ion beam scanning electron microscope (FIB-SEM), and a transmission electron microscope (TEM). The CLEM includes a CLEM electron source to generate a first electron beam towards a sample and cause a first scattered beam for capture by the shared camera, and a light source configured to cause at least a portion of the sample to fluoresce for capture by the shared camera. The FIB-SEM includes a SEM electron source and a plasma source, the plasma source configured to generate an ion beam to mill the sample while supported by the sample holder. The TEM includes a TEM electron source to generate an electron beam towards the sample on the sample holder and cause a scattered beam for capture by the shared camera as a diffraction pattern.

To reduce charging artifacts in electron microscopy, a notched ring of sputterable material can be situated about a sample surface. An ion beam can be directed through a notch at to sputter the sputterable material onto the sample surface. Sputtering can be performed after low-angle focused ion beam (FIB) milling at the same sample tilts. The sample can be rotated about an axis and sputtering performed at multiple rotation angles. Upon sputtering of the conductive coating, the sample can be reoriented and imaged. These steps can be repeated to produce a 2D image stack for 3D image reconstruction.

The invention relates to the technical field of sample preparation, and discloses a sample preparation method for microscopic characterization of a sample profile. The method comprises the steps of sample pretreatment, specific position positioning, profile preparation, sample separation, carrier transfer and fixation and the like, cutting parameters are accurately controlled through a focused ion beam (FIB), and a silicon wafer carrier and Pt / C / W welding and fixing technology is combined. The problems that in an existing sample preparation method, sample preparation precision is low, conductivity is poor, fixation is unstable, and multi-characterization combination adaptability is insufficient are solved. Nondestructive preparation of a small-size micro-area profile at a specific position is realized, the sample stability is high, various characterization means such as nano infrared and nano SIMS are compatible, the accuracy and relevance of analysis data are ensured, and the method is suitable for microscopic characterization requirements in the fields of semiconductor integrated circuits, nano coatings, biomedical materials and the like.

The invention relates to a special-shaped mold modeling method and a micro-nano machining method for a coronal bionic adhesion array, and the method comprises the steps: carrying out the parametric modeling of a special-shaped micro-nano structure through three-dimensional digital scanning and curvature analysis, and achieving the high-precision molding of the spatial distribution special-shaped micro-nano structure of a mold through a focused ion beam or ultrafast laser or other micro-nano machining technologies; in combination with plasma-assisted multi-step deposition, in-situ growth of graded nano textures such as nano spikes and nanotube arrays in different space areas of the mold is realized, and precise regulation and control of nano structure space distribution and surface energy state are realized; according to the technology, the surface anti-pollution and coining consistency of the mold is effectively improved.

The invention relates to a system and method for controlling a slice thickness when obtaining a 3D tomographic image of an inspection volume in a semiconductor wafer, the method comprising: depositing a marker structure (66) on the wafer surface (32), alternatingly: exposing a cross-section surface (48) in the inspection volume by milling into the inspection volume and the marker structure (66) with a focused ion beam (34) in a focused ion beam system (24), wherein a current position of the focused ion beam (34) is repeatedly derived from a cross-section of the marker structure (66), wherein the cross-section of the marker structure (66) is determined by measuring numbers and / or types of secondary particles released during milling, and wherein the milling is stopped when the current position reaches a desired position; and imaging the cross-section surface (48).

A method of evaluating a region of interest of a sample with a sample evaluation tool that includes a focused ion beam (FIB) column, a scanning electron microscope (SEM) column, and an atomic force microscope (AFM) instrument, the method comprising: transferring the sample into in a vacuum chamber of the sample evaluation tool; acquiring a plurality of two-dimensional images of the region of interest over a plurality of iterations of a delayering process by: (a) positioning the region of interest under a field of view of the FIB column; (b) milling a layer of material from the region of interest with the FIB column; (c) moving the region of interest under a field of view of the SEM column; (d) imaging the region of interest with the SEM column and measuring a depth of the milled layer in the region of interest with the AFM instrument; and repeating steps (a)-(d) a plurality of times without removing the sample from the vacuum chamber.

A method for measuring an atomic scale microscopic thermal conductivity, said method being based on a focused ion beam-based sample preparation method and scanning transmission electron microscopy-electron energy loss spectroscopy. A temperature gradient is generated by locally heating a sample in a scanning transmission electron microscope; the temperature is measured in the electron microscope by means of electron energy loss spectrums; local heating in a nano-scale region of a sample is realized, and a stable temperature field having a large temperature gradient is constructed; and atomically resolved phonon spectrum detection and temperature measurement are realized in space. Local temperature information and a relative value of a microscopic thermal conductivity can be measured at an atomic scale, so that the quantitative analysis of the microscopic thermal conductivities of structures at different positions inside the sample can be performed; and the present invention has the advantages of accurate measurement, high spatial resolution, capability of studying nano-scale thermal transport and micro-zone thermal conductivity, etc., and is suitable for samples having complex structures and a plurality of material systems.

A method obtains measurements of semiconductor structures from a single wedge cut of an inspection volume. The method comprises obtaining the wedge cut by exposing a cross-section surface in the inspection volume by milling into the inspection volume with a FIB column arranged under a slant angle, and imaging the cross-section surface with a charged particle beam imaging system. The method also comprises determining positions of cross-section features of semiconductor structures in the wedge cut, and determining reference positions of the cross-section features from at least one reference image of the semiconductor structures. The method further comprises obtaining the one or more measurements of the semiconductor structures using lateral displacements between the positions of the cross-section features and the reference positions.

Provided is an ion milling device capable of forming a processed surface in which an amorphous layer is suppressed. This ion milling device comprises: a sample chamber provided with a gas introduction port; a sample stage installed in the sample chamber; an ion gun that is attached to the sample chamber and emits an unfocused ion beam; an electrode that can be disposed so as to face a sample placement surface of the sample stage; and a power supply that applies a voltage between the electrode and the sample stage. The sample stage is provided with a magnetic circuit.

A process apparatus includes a differential pumping device having a head which has a plurality of annular grooves in a surface which faces a substrate to be processed. An orifice is formed inside an innermost one of the annular grooves and defines a processing space for processing the substrate. A vacuum pump is connected to at least one of the annular grooves to suck gas therefrom, with the surface of the head facing the substrate processing surface to create a high-level vacuum in the processing space. A focused ion beam column is equipped with a cylindrical chamber leading to the orifice. The chamber has disposed therein a focused ion beam optical system which emits a focused ion beam through the orifice. A precursor gas supply connects to the innermost annular groove to eject a precursor gas to flow into the processing space along the process surface.

The application provides a preparation method of a transmission electron microscope sample, which comprises the following steps: forming at least two layers of stacked ion beam protective layers on a target layer, each layer of the ion beam protective layers comprising a first protective layer and a second protective layer made of different materials; etching at least one layer of the ion beam protective layers by using a focused ion beam; and judging whether the etching angle of the focused ion beam is a preset etching angle according to the etching image of the surface of the etched ion beam protective layer. Since the contrast of the images of the first protective layer and the second protective layer is also different, the etching angle of the focused ion beam can be judged according to the contrast of the etching image, and when the etching angle does not conform to the preset etching angle, the etching angle of the focused ion beam can be adjusted according to the judgment result in time, so that the observation target unit is prevented from being damaged or deformed, the information integrity of the transmission electron microscope sample is ensured, and the success rate of the sample preparation of the transmission electron microscope sample is improved.

Systems, components, methods, and algorithms encoded as executable instructions for processing a sample using focused ion beams are described. A method includes processing a sample 125 by extracting a beam of ions 310 from a mixture of a first gas and a second gas. The beam can include a composition of relatively heavy ions and relatively light ions. The method can include deflecting 330 the beam of ions in accordance with a deflection pattern and directing the beam through an electromagnetic field 305 that is oblique relative to an axis of the beam. The electromagnetic field can be configured to at least partially disperse 315 the beam in space such that the deflection pattern causes the beam of ions to process a first portion of a sample surface by the relatively light ions and a second portion of the sample surface by the relatively heavy ions.

The application discloses a wedge-shaped wedge tool machining method and a clamp for machining the wedge tool. The wedge-shaped wedge tool machining method comprises the steps of preparing a blank, grinding bed machining, tool tip processing and wedge tool body processing. The wedge tool blank is prepared by adopting an ultra-fine grain tungsten carbide extrusion forming process. A vertical hole is formed in one step during the blank preparation. The blank is clamped and fixed by using a clamp. A precision grinding bed is used to machine a tool handle, a tool body and a tool tip. Other parts of the blank form a wedge tool body. The wedge tool body is clamped and fixed by using a clamp. A focused ion beam is used to cut and etch from the tool tip part to form a first inclined hole, a second inclined hole and an arc-shaped groove. The wedge tool body is clamped and fixed by using a clamp. A focused ion beam is used to cut and etch from the upper part of the wedge tool body to form a guide hole. In the application, the vertical hole is formed in one step. The process of EDM machining, polishing and polishing of the vertical hole is omitted. The efficiency is higher. The machining precision and stability are more easily guaranteed. Mass production is facilitated.

Provided is a charged particle beam device with which work time can be reduced. A charged particle beam device 100 comprises: a charged particle beam column 1 that radiates an electron beam; a focused ion beam column 2 that radiates a focused ion beam; a first sample stage 5 that can be tilted; a second sample stage 6 that is disposed on the first sample stage 5 and can be tilted independently of the first sample stage 5; an EBSD detector 3; and a sample transfer unit 13. The second sample stage 6 has bulk sample holders 65, 66 on which bulk samples 7, 9 are placed, and a sample piece holder 67 on which sample pieces 7a, 9a extracted from the bulk sample 9 are placed, and a sample placement surface 67S of the sample piece holder 67 has an inclination angle that is set with respect to a bulk sample placement surface 66S of the bulk sample holder 66.

This application relates to the field of battery material characterization technology, and particularly to a method for characterizing the carbon coating layer of a carbon-coated cathode material and its application. The method includes: preparing a sample to be tested: processing the carbon-coated cathode material using a focused ion beam method to prepare a sample to be tested; the thickness of the sample to be tested is less than 50 nm; characterizing and analyzing the sample to be tested: performing characterization and analysis on the sample to be tested using a transmission electron microscope (TEM) to determine the thickness and uniformity of the carbon coating layer of the carbon-coated cathode material. This application employs FIB-TEM combined technology to achieve effective characterization of complex structural materials; by using a focused ion beam method to process the carbon-coated cathode material to prepare a sample to be tested with a thickness of less than 50 nm, the limitations of thickness and region selection in traditional TEM sample preparation are overcome while ensuring the integrity of the sample to be tested, providing a testing basis for subsequent characterization and analysis.

The invention discloses a focused ion beam sample preparation method for reducing a curtain effect of a porous transmission sample, and relates to the technical field of material analysis. According to the method, for a porous oxide film sample, the problem of a curtain effect of a porous structure in focused ion beam thinning is solved by executing sample table rotation-tilting angle regulation and directional platinum protection layer deposition on Helios 5CX equipment; the method specifically comprises the steps of sample pretreatment, preliminary thinning, porous structure identification, rotation-tilting-selective coating, recovery angle thinning and sample purging. Compared with a traditional method, the method has the advantages that the curtain effect degree is obviously reduced, the preparation success rate reaches 80% or above, the integrity rate of the pore structure is kept to be higher than 95%, and the method is suitable for transmission electron microscope sample preparation of high-temperature oxidation porous samples such as nuclear material cladding and aero-engine blade coatings and has important engineering application value.