239 results about "Focused ion beam" patented technology

The invention relates to the technical field of semiconductor manufacturing, in particular to a sample with a pore structure, and provides a thinning method for preparing a pore sample by using a focused ion beam. According to the method, the front face of a target sample is thinned through FIB, then the back face of the target sample is thinned, the problem that in the prior art, a TEM target sheet generated when the front face and the back face of the target sample are thinned alternately is not of a pore internal structure is solved, and the technical effects of the method are that the efficiency of preparing the pore sample can be improved; and the picture shooting quality of the pore structure sample is improved.

The invention provides a rock mass internal pore intelligent characterization and three-dimensional reconstruction method and system, and relates to the technical field of rock mass internal structure analysis, and the method comprises the steps: obtaining a two-dimensional image sequence of a rock core in a target rock mass through a focused ion beam scanning electron microscope slicing-imaging sequence working mode; performing pore segmentation on each two-dimensional image in the two-dimensional image sequence by using the pore segmentation network to obtain a plurality of pore two-dimensional segmentation maps; on the basis of the pore two-dimensional segmentation map, constructing three-dimensional binary volume data of the pores according to a slice sequence; according to the three-dimensional binary volume data, performing three-dimensional reconstruction and structural characterization on rock core pores; according to the method, an imaging-recognition-reconstruction-evaluation integrated workflow is constructed, and a full-chain closed loop from nanoscale real three-dimensional data acquisition to intelligent recognition, three-dimensional reconstruction and quantitative analysis is realized.

Provided is a focused ion beam device capable of exhausting gas remaining in a nozzle. A focused ion beam device (100) for processing a sample (S) by irradiating the sample (S) with an ion beam comprises: a nozzle (42) for blowing a gas (2) for forming a deposition film to the sample (S) from an outlet (422); and a tank for supplying the gas (2) into the nozzle (42), the nozzle (42) having an exhaust hole (426) for exhausting the gas (2) in the nozzle (42).

The invention belongs to the technical field of thermal expansion coefficient measurement, and relates to a micro-scale material thermal expansion coefficient measurement method and system based on in-situ video analysis, and the method comprises the following steps: 1, extracting a micron-sized sample from any position of a target material by using a focused ion beam; 2, recording a dynamic video of the heating deformation process of the sample by using an electron microscope; 3, performing frame-by-frame image processing on the dynamic video, and extracting pixel data of length, width and area of the sample; 4, converting the pixel data into an actual physical size, recording temperature-time data, and associating a video frame with a corresponding temperature value; 5, calculating the thermal expansion coefficient of the material based on the temperature-deformation curve; the problems that an existing thermal expansion coefficient measuring method is complex in operation and insufficient in accuracy and universality are solved, and particularly, higher thermal expansion coefficient measuring precision and reliability are achieved for micro-scale materials; the requirements on high-precision and high-throughput material testing in the fields of modern chips, micro-nano devices and the like can be met.

The dual focused ion beam and scanning electron beam system includes an electron source that generates an electron beam and an ion source that generates an ion beam. The electron beam column directs an electron beam at a normal angle relative to a top surface of the stage. An ion beam column directs the ion beam at the stage. The ion beam is at an angle relative to the electron beam. A detector receives the electron beam reflected from the wafer on the stage.

A focused ion beam lens column (17) of this charged particle beam device includes an ion source (41) and an ion optics (42). The ion optics (42) includes a diaphragm member (54b) provided with a plurality of through-holes that are switched in order to cause a portion of a beam of the ions (an ion beam) generated by the ion source (41) to pass therethrough. Switching is performed to select any of the plurality of through-holes while the optical conditions of the ion optics (42) are maintained in a predetermined projection mode (second projection mode). The plurality of through-holes includes fine round holes for observation that are positioned in the center of the ion beam, first rectangular holes for processing that are positioned off the center of the ion beam, and second rectangular holes for observation and processing that are positioned off the center of the ion beam.

The invention relates to a transmission electron microscope sample and a preparation method thereof. The method comprises the following steps: determining a target area on a sample under a scanning electron microscope; forming a mark in a target area of the sample by using electron beam induced deposition, and determining a front cutter stopping position and a back cutter stopping position; forming a protective layer on the surface of the target area; and thinning the sample and the protective layer from the front side to the front side cutter stop position based on the mark by using a focused ion beam, and thinning the sample and the protective layer from the back side to the back side cutter stop position based on the mark by using the focused ion beam, so as to obtain the transmission electron microscope sample. The safety and the success rate of the preparation process can be effectively improved when the sample wafer is prepared.

The utility model discloses an objective table structure for chip focused ion beam experiment detection, which relates to the technical field of chip experiment detection and comprises an objective table, the objective table is plate-shaped, one side of the objective table is provided with a mounting groove, and the mounting groove is in a square groove shape; the experiment table is in a disc shape, the experiment table is arranged on the objective table, the experiment table is detachably connected with the objective table, and the experiment table is used for performing section sample preparation and sheet preparation on an experiment chip; the accessory mounting assembly comprises an accessory mounting table and a mounting base; and a clamping piece. The molybdenum net is bent by the clamping pieces to abut against the clamping grooves, so that the molybdenum net is fixed and limited, the effect of limiting and fixing the position of the molybdenum net is guaranteed, meanwhile, the clamping pieces are used for elastically clamping the molybdenum net at the clamping grooves, and the position can be adjusted when the position needs to be adjusted; and the defect that in the prior art, the limiting and fixing effect on the molybdenum net is poor is effectively overcome.

The invention relates to a beam gate and centering unit integrated focused ion beam micro-nano machining system and an ion beam control method. The focused ion beam micro-nano machining system integrating the beam brake and the centering units comprises a first centering unit (3), a second centering unit (4), a Faraday cup (5) and a control unit, and the control unit is electrically connected with the first centering unit (3) and the second centering unit (4). The control unit is used for controlling the first centering unit (3) and the second centering unit (4) to form a deflection electric field. According to the focused ion beam micro-nano machining system integrating the beam gate and the centering units, the centering unit located on the lower portion is used as the beam gate by means of the superposing performance of electric signals, and integration of the beam gate and the centering units is achieved; rapid closing of the ion beam under high-voltage driving and high-precision centering and axis closing of the ion beam under low-voltage driving can be realized in the same unit, and the complexity of an ion optical system and circuit control is reduced.

The invention discloses a porous transmission layer and a preparation method and application thereof, and relates to the technical field of water electrolysis hydrogen production. The preparation method of the porous transmission layer comprises the following steps: S1, performing etching treatment on at least part of the surface of a base material by using a focused ion beam so as to form arrayed grooves, and obtaining a to-be-deposited base material; and S2, a non-noble metal layer and a noble metal layer are sequentially deposited on the surface of the to-be-deposited base material, and the porous transmission layer is obtained. The porous transmission layer can effectively transmit gas and moisture required by reaction, reduce interface contact resistance, improve conductivity and guarantee long-term stable operation and high-efficiency performance of the proton exchange membrane electrolytic cell.

The invention relates to the technical field of in-situ detection of electron microscopes, in particular to a one-stop four-dimensional transmission scanning focused ion beam double-beam electron microscope, which comprises a vacuum cavity provided with a vacuum cavity cover; a sample table is arranged on the inner side of the vacuum cavity cover; the electron beam, the ion beam, the manipulator, the sample holder and the gas injection system are mounted on the vacuum cavity through the multifunctional in-situ sealing flange; the system further comprises a 4D STEM detector. According to the invention, electron beam observation, ion beam processing, four-dimensional scanning transmission electron microscope imaging information acquisition and in-situ electric, optical, thermal, force and other external field loading functions are integrated, and scanning electron microscope imaging, transmission electron microscope sample preparation and in-situ 4D STEM diffraction information acquisition under multi-field combined application can be carried out on a sample in one device. One-stop full-scale multi-field combined application detection is realized, the test result is prevented from being influenced by contact with air, water and other external environments in the sample transfer process, and meanwhile, the test efficiency is remarkably improved.

The application provides a yttrium barium copper oxide photonic crystal and a preparation method thereof. 7‑x The photonic crystal structure is composed of periodic yttrium barium copper oxide (YBa2Cu3O 7‑x ) superconducting material circular crystal columns, the lattice constant is 2630nm, and the radius of the circular crystal column is 500nm. The photonic crystal can change the position and width of the band gap by changing the light incidence angle, so that the middle infrared band gap is realized. The photonic crystal is prepared by adopting a magnetron sputtering method to prepare a yttrium barium copper oxide film on a strontium titanate single crystal substrate, and then adopting a focused ion beam method to process the yttrium barium copper oxide film into a periodic nanostructure composed of yttrium barium copper oxide circular crystal columns, so that the yttrium barium copper oxide photonic crystal is obtained. The preparation method of the yttrium barium copper oxide photonic crystal is simple and easy to control.

The invention relates to a non-uniform D-shaped focused ion beam. The method includes: generating a charged particle beam with a charged particle beam source and directing the charged particle beam to a target along a beam axis of a charged particle beam column; directing the charged particle beam through an elongated aperture positioned offset relative to the beam axis; and focusing the beam to the target to produce an asymmetric intensity cross-section of the beam, wherein the cross-section has a sharp intensity edge at the target based on the offset elongated aperture.

The utility model provides a heat dissipation device for focused ion beam equipment and the focused ion beam equipment. The focused ion beam equipment comprises a machine table, a vacuum cavity and an ion beam system, the vacuum cavity and the ion beam system are located on the machine table, the ion beam system is located above the vacuum cavity, the heat dissipation device comprises an air cooling heat dissipation part and a water cooling heat dissipation part, the air cooling heat dissipation part is installed on the machine table and comprises an air channel and an exhaust fan, and the air channel is provided with an air inlet and an air outlet. The air outlet faces the ion beam system, the air inlet is far away from the ion beam system, and the exhaust fan is installed at the air inlet; the water-cooling heat dissipation part is installed on the machine table and comprises a heat exchange pipe, a circulating pipe, a water-cooling block and a circulating pump. The heat exchange tube is mounted between the vacuum chamber and the machine table; the heat exchange pipe is communicated with the circulating pipe; the circulating pump and the water cooling block are mounted on the circulating pipe; the circulating pump is used for providing power for cooling water to flow in the heat exchange pipe and the circulating pipe, and the water cooling block is used for cooling the cooling water flowing through the water cooling block.

Systems, components, methods, algorithms encoded in media, and techniques for localized hydrogen charging of a sample are described. A method of processing a workpiece in a focused ion beam system can include generating a plasma in an ion source gas comprising hydrogen. The method can include extracting a beam of hydrogen ions from the plasma. The method can include directing the beam toward a region of a workpiece, in accordance with a scan pattern. The method can include charging the region of the workpiece with hydrogen. In some embodiments, the method includes decomposing a hydrogen precursor using a charged particle beam, instead of directly irradiating the workpiece with a hydrogen focused ion beam.

The invention discloses an FIB sample preparation SEM image-oriented chip defect automatic detection method, which comprises the following steps: acquiring a scanning electron microscope image of a chip sample subjected to focused ion beam sample preparation, and carrying out manual labeling to construct a chip defect image data set; preprocessing the data set image to obtain a sample set for training; training a deep learning chip defect detection model based on the sample set to realize automatic identification and positioning of a defect target; inputting a to-be-detected SEM image into the trained detection model to obtain a candidate defect bounding box and a corresponding confidence coefficient and category probability; performing non-maximum suppression on the candidate results of the same defect category, and removing a redundant frame to obtain a final defect detection result; and carrying out statistics on defect targets according to categories based on the final detection result, and generating structured defect statistical data containing image identifiers, defect categories and number. And high-precision automatic detection and positioning of multiple types of defects in the SEM image of the FIB sample are realized.

The application discloses a method for analyzing the existence form of As elements in pyrite based on a combination of multiple methods, which comprises the following steps: S1, selecting pyrite particles containing multiple ring zones as the object to be detected; S2, performing electron probe analysis to circumscribe the further analysis area; S3, judging the substitution property of As to Fe or S to preliminarily determine the existence form of As elements; S4, performing focused ion beam processing and spherical aberration transmission electron microscope analysis to shoot HAADF and ABF images; and S5, analyzing the spherical aberration transmission electron microscope images by using DigitalMicrograph data processing software to analyze the intensity difference of Z contrast microscopic images of different atomic sites and the abnormal atomic space occupation of heavy elements and light elements in the ABF images. The application is based on the combination of electron probe and spherical aberration transmission electron microscope, can finely analyze the existence form of As elements in pyrite from the micron to nanometer scale, and has high reliability and sufficient substantial evidence.

The invention discloses a special electron microscope imaging and focused ion beam processing sample table for optical fibers, and solves the problems that in the prior art, optical fiber electron microscope observation and focused ion beam processing often utilize a traditional electron microscope plane sample table to be matched with conductive adhesive to fix the optical fibers, the conductive adhesive pollutes the surfaces of the optical fibers, optical experiments are inconvenient after cutting off, and the optical fibers are prone to charge accumulation. The device comprises a base, an optical fiber bearing table and optical fiber fixing devices, a V-shaped groove is formed in the top of the optical fiber bearing table and can bear common optical fibers, the cylindrical optical fiber fixing devices are fixed to the two ends of the base, two sets of through fixing holes are symmetrically formed in the lower portion, and the optical fibers penetrate through the fixing holes and are fixed through friction force. The distance from the optical fiber to the top end of the fixing device is 3mm. The optical fiber can be firmly fixed without a conductive adhesive, surface pollution is avoided, redundant optical fibers can be wound and fixed, the length of several meters is reserved, subsequent optical experiments are facilitated, the fixing device can be independently detached, coating treatment is facilitated, use is convenient, and FIB machining whole-process operation is facilitated.

Disclosed are system and method for metrology of 3D structural elements of a wafer by projecting, on a subset of the 3D structural elements, a focused ion beam (FIB) at a predefined diagonal angle, thereby generating a diagonal cut in each of the subset of sites, scanning each of the diagonal cuts using a scanning electron microscope (SEM), generating a reconstruction of the one or more 3D structural elements or a component thereof based on the SEM image and performing metrology measurements on the reconstruction.

The invention provides a solid material surface processing method which comprises the following steps: S1, arranging a conductive film layer on the surface of a solid material to obtain a semi-finished product A; s2, a groove is formed in the surface of the semi-finished product A with the ion beam current of 0.05-0.5 [mu] A through the focused ion beam technology, and a semi-finished product B is prepared; and S3, removing the conductive film layer on the surface of the semi-finished product B. According to the processing method for the surface of the solid material, the current of the ion beam can be accurately regulated and controlled, so that grooves with different depths are accurately formed in the surface of the solid material, and the bottoms of the grooves protrude towards the notch direction of the grooves. The surface of the finished product prepared by the processing method provided by the invention is provided with nanoscale grooves with different depths, the bottoms of the grooves protrude towards the notch direction of the grooves, and the protrusions at the bottoms of the grooves enable design patterns formed by the grooves to present higher definition and contrast through enhanced optical contrast characteristics, so that the product quality is improved. Good mechanical stability and damage resistance are realized.

This application discloses an ion focusing system, including a process chamber, and a beam ion source, an electro-lens assembly, and a support platform arranged sequentially from top to bottom within the process chamber; the process chamber is grounded; the electro-lens assembly includes multiple micro-electro-lenses, which are spliced ​​together to form an electro-lens array; the electro-lens array is a downwardly curved surface and is rotationally symmetrical; the electro-lens assembly is connected to a first negative pressure V1; the support platform is connected to a second negative pressure V2 to form an electric field between the platform and the electro-lens assembly, where V2 < V1 < 0; after the plasma generated by the beam ion source passes through the electro-lens assembly, the positive ions in it are focused towards the central region of the electro-lens assembly under the action of the electric field, and the central region is a circular region centered on the rotation axis and located on the support platform. This ion focusing system, based on the principles of calculus, can improve the focusing effect of ions, and the diameter of the focused ion beam can reach within 10 mm.

The present application relates to the field of transmission electron microscopy characterization of two-dimensional material structure, and particularly to a method for efficiently obtaining cross-section characteristic crystal orientation of two-dimensional material, which is suitable for two-dimensional van der Waals layered material and two-dimensional non-layered material. A focused ion beam microscope (FIB) is used to sample in the direction perpendicular to (or parallel to) the long straight edge of the two-dimensional material edge, and the two-dimensional material sampling direction is parallel to the half-moon-shaped carrier net string length direction for welding, so as to prepare a cross-section sample capable of reflecting atomic layer stacking sequence; the half-moon-shaped carrier net string length direction is placed perpendicular to the TEM sample rod axial direction, and then small-angle tilting is performed to quickly realize sample crystallographic orientation. The present application lays a foundation for efficiently analyzing crystallographic information such as crystal structure, stacking defects and surface reconstruction of the material by observing the cross-section sample of the two-dimensional material.

The present invention discloses an integrated and efficient device and method for generating nonlinear Airy beams, which relate to the fields of light field control and nonlinear optical technology. The nonlinear crystal of the present invention is polished and cut at a specific angle to meet phase matching conditions to achieve efficient nonlinear frequency conversion, and then a focused ion beam (FIB) is used to process a depth-gradient microstructure on its surface. When fundamental frequency Gaussian light is incident on the interior of the crystal from a non-modulated surface, efficient frequency conversion occurs, and the generated nonlinear harmonics are subjected to cubic phase modulation after passing through the depth-gradient microstructure, and then Fourier transformed through an objective lens, generating a nonlinear Airy beam in the Fourier plane of the objective lens. The structure is simple, compact, highly integrated, and has high nonlinear conversion efficiency. By designing the parameters of the cubic phase structure, any nonlinear Airy beam can be generated.

The invention provides a method for transferring an in-situ transmission sample to a grid for post characterization, and belongs to the technical field of transmission sample processing, and the method comprises the following steps: preparing a metal target sample with a step structure and a deep groove through a focused ion beam micro-nano processing technology, meanwhile, a reusable metal protective cover formed by seamlessly welding a concave cover body and a cover cap with a connecting structure is machined; a metal protective cover is picked up by a transfer tool and covers a metal target sample after an in-situ experiment, an integrated assembly of the metal protective cover and the metal target sample is transferred to a target grid after being fixed, the sample and the protective cover are separated through ion beam excision along the deep groove position, the separated sample is used for post characterization, and the protective cover can be reused after being recycled and trimmed. By designing the reusable protective cover and optimizing the transfer process, the problems that a special carrier for an in-situ experiment is incompatible with a double-tilt transmission electron microscope grid, the surface of a sample is polluted due to Pt welding in the FIB transfer process, and then high-quality characterization after an event is restricted are solved.

The utility model discloses a focused ion beam microscope ion source, which comprises an installation frame, two ion source pins are fixedly connected on the installation frame through openings, one side of each ion source pin is fixedly connected with an emission part, one end among a plurality of emission parts is fixedly connected with a Taylor cone, and the other end among the emission parts is fixedly connected with a focusing lens. A sliding shaft is slidably inserted into the bottom of the mounting frame, a rotating disc is fixedly connected to the bottom end of the sliding shaft, a sealing cover is clamped to the outer side of the rotating disc, a storage pipe sleeves the bottom end of the sealing cover in a threaded mode, a heating wire sleeves the outer wall of the circumference of the storage pipe, a gallium source body is stored in the storage pipe, and a discharging port is formed in the bottom end of the storage pipe. The top end of the Taylor cone penetrates through the discharging opening and is inserted into the storage pipe. The storage tube is stably mounted through the sliding shaft and the sealing cover, so that the storage tube is prevented from falling off, and the stability of the ion source is improved.

The invention provides a method for preparing an electron energy loss spectrum sample, and the method comprises the steps: positioning a defect region in a device through an electron beam absorption current method, and making a first positioning mark adjacent to the defect region, a focused ion beam is used for thinning in the first direction to obtain a first sample containing the first positioning mark and the defect area, the distance between the first positioning mark and the defect area in the second direction is obtained, the second direction is perpendicular to the first direction, and on the basis of the distance and the size of the defect area, the defect area is obtained. And making a second positioning mark, and thinning the first sample in a second direction by using a focused ion beam by taking the second positioning mark as a reference to obtain a second sample containing the defect area. The method can be used for accurately preparing the electron energy loss spectrum thin sample with tiny defects.

The invention provides a packaging method of an enhanced gallium nitride power semiconductor device, which belongs to the technical field of chip manufacturing, and comprises the following steps of: firstly, simulating and optimizing an electrode distance and a dielectric layer parameter through three-dimensional electric field distribution, and then realizing efficient thermal connection between a chip and a heat dissipation substrate by using a silver sintering process; and a multi-layer field plate structure is designed to disperse a high electric field region. Then a high-dielectric-constant resin layer and low-ion-content epoxy molding compound are applied for insulation and packaging, and then a siloxane modified polyimide protection layer is coated. The reliability is verified through an electric field tolerance test, a highly accelerated life test and a thermal cycle test, a micro-nano channel structure is formed by using a focused ion beam technology to relieve a local high electric field area, and finally the performance and life of the device are evaluated based on an electric field distribution and reliability prediction model of a deep learning framework. The reliability problem of the gallium nitride power semiconductor device in a high-voltage working environment is solved.

An electron microscope system including a sample holder, a shared camera, a correlative light electron microscope (CLEM), a focused ion beam scanning electron microscope (FIB-SEM), and a transmission electron microscope (TEM). The CLEM includes a CLEM electron source to generate a first electron beam towards a sample and cause a first scattered beam for capture by the shared camera, and a light source configured to cause at least a portion of the sample to fluoresce for capture by the shared camera. The FIB-SEM includes a SEM electron source and a plasma source, the plasma source configured to generate an ion beam to mill the sample while supported by the sample holder. The TEM includes a TEM electron source to generate an electron beam towards the sample on the sample holder and cause a scattered beam for capture by the shared camera as a diffraction pattern.

The application provides a zirconium oxide nanostructure realizing structural color and a preparation method and application thereof. The preparation method of the zirconium oxide nanostructure realizing structural color comprises the following steps: coating a zirconium oxide photoresist solution on a substrate surface to form a film, and obtaining an inorganic zirconium oxide film through calcination; sputtering a conductive layer on the surface of the inorganic zirconium oxide film, and then performing focused ion beam etching to obtain the zirconium oxide nanostructure. The preparation method is simple, the structural color of the obtained nanostructure in a visible light band exhibits a wide color gamut, high resolution, high saturation and brightness, and has wide application value.

The invention provides an ion beam generation system based on a gallium ion filament, which comprises an ion source assembly, an emission gun assembly, an ion acceleration assembly, a focusing assembly and a deflection assembly, and is characterized in that the gallium ion filament forms a liquid film through current heating, gallium ions are ionized under a high-voltage electric field, and a primary ion beam is formed; the ion beam is further focused through an accelerating electrode and a multi-pole electrostatic lens in the system, biaxial scanning is achieved through an electrostatic deflection electrode set, and nanoscale beam spot control can be achieved in cooperation with a modular cavity, an anti-interference shielding structure and a vacuum compatible design. The device supports a 10 <-6 > Pa vacuum environment and a gas-assisted process, has the advantages of modular maintenance, high and low voltage signal isolation and the like, and is suitable for micro-nano processing scenes such as semiconductor repair, sample preparation, ion imaging and the like.