74 results about "Charged particle detectors" patented technology

To provide: a substrate-holding apparatus with a sensor device, the sensor device having a substrate layer and a sensitive layer; and a manufacturing method thereof.SOLUTION: A sensor device 120 at least comprises a substrate layer 180 and a sensitive layer 140. A manufacturing method comprises providing a mechanical supporting layer 160, and connecting the mechanical supporting layer 160 to the sensor device 120. After the connection, the sensitive layer 140 is situated between the substrate layer 180 and the mechanical supporting layer 160. By connecting the mechanical supporting layer 160, it is possible to thin the substrate layer 180 for forming a charged particle detector. The mechanical supporting layer 160 forms part of the manufactured detector. The detector can be used in a charged particle microscope, such as a transmission electron microscope for direct electron detection.SELECTED DRAWING: Figure 4b

A charged particle detector includes a plurality of sensing elements, with each sensing element being further divided into sub-sensing elements. The sub-sensing elements may be individually addressed during high-resolution image acquisition in a picture mode, and may be grouped together during high speed detection in a beam mode. The arrangement allows a selectable tradeoff between speed and resolution without introducing significant parasitic parameters.

Photolithography system, comprising: a plasma generation chamber (101); a droplet generator (108) configured to deliver a stream of droplets (142) into the plasma generation chamber; a laser (102) configured to generate a plasma from the droplets by irradiating the droplets in the plasma generation chamber; one or more first charged particle detectors configured to detect the speed, intensity, and / or energy of the charged particles ejected from the plasma and to output first sensor signals indicative of the charged particles; and a control system (114) configured to receive the first sensor signals, analyze the first sensor signals, and adjust plasma generation parameters based at least in part on the first sensor signals.

Systems and methods for imaging a sample using a charged particle beam device are disclosed. The charged particle beam apparatus may include: a charged particle source configured to generate primary charged particles, the primary charged particles forming a primary charged particle beam along a primary optical axis; and a charged particle detector comprising a plurality of concentric segments of charged particle sensitive material, the plurality of concentric segments configured to detect charged particles emitted from the sample after the primary charged particle beam interacts with the sample, wherein each segment of the plurality of concentric segments is configured to collect the emitted charged particles having a range of energy levels and a primary energy level.

Systems and methods for charged particle detection using a charged particle detector in a charged particle beam apparatus are disclosed. The apparatus may include a charged particle detector including a substrate. The substrate may include a plurality of sensing elements configured to receive a plurality of charged particles generated from a sample. Each sensing element of the plurality of sensing elements includes a first device configured to detect a charged particle of the plurality of charged particles having an energy equal to or lower than a first threshold value, and to allow a charged particle of the plurality of charged particles having an energy greater than the first threshold value to pass therethrough. The sensing element also includes a second device configured to detect charged particles allowed to pass through the first device.

Methods and apparatus are disclosed for concurrent digital autoradiography of alpha-particle events and positron events using a spatially resolving charged particle detector and a gamma-ray detector. Alpha particles and positrons are detected by the charged particle detector. Positrons are identified based on coincidence with gamma-ray events. A positron-emission autoradiograph is formed based on positron positions. Alpha particles, both coincident and anticoincident with positrons, are identified based on energy deposition patterns. An alpha-emission autoradiograph is formed based on alpha-particle positions and energies. Separation of coincident alpha and positron events recorded by the charged particle detector improves position detection accuracy. Validation of positron imaging for alpha-emitter distribution or dosage, based on correlation of respective autoradiographs, is described. Variations for particle identification based on isotropy, energy, coincidence, or anticoincidence are presented. Disclosed techniques are applicable to alpha-emitting radionuclides with complex decay chains.

Provided is a method that allows quantification of non-volatile impurities in a liquid.　This method for quantifying non-volatile impurities is characterized by comprising: a first step for producing a calibration curve on the basis of measurement values obtained by measuring standard liquids each containing a standard substance at a known concentration by a charged particle detector; and a second step for quantifying non-volatile impurities using the calibration curve and a measurement value obtained by measuring a sample liquid containing non-volatile impurities by the charged particle detector. The method is characterized in that the standard substance is a substance in which the ratio (H / W) of the height (H) to the width (W) of a peak in a spectrum obtained by measuring a solution of the standard substance at a concentration of 1 mg / L by the charged particle detector is at least three.

To provide a method for quantitatively determining nonvolatile impurities in a liquid.SOLUTION: A quantitative determination method for nonvolatile impurities includes: a first step of creating a calibration curve based on a measured value obtained by measuring a standard solution with a known concentration of a standard substance using a charged-particle detector; and a second step of quantitatively determining the non-volatile impurities using a measured value obtained by measuring a sample solution containing the non-volatile impurities using the charged-particle detector and the calibration curve, where the standard substance is a substance in which a ratio (H / W) of a peak height (H) to width (W) is 3 or more, in a spectrum obtained by measuring a solution of the standard substance at a concentration of 1 mg / L using the charged-particle detector.SELECTED DRAWING: None

Provided are a charged particle detector and a radiation detector capable of obtaining an observation image with correct contrast without saturation even when the number of signal electrons incident on a detector is increased due to an increase in the current of a primary electron beam. The charged particle detector is characterized by having a scintillator (109) having a signal electron detection surface (109a) for detecting signal electrons emitted when a specimen is irradiated with primary electrons and converting the signal electrons into light, a light detector (111) having a light detection surface (111a) for detecting the light emitted from the scintillator (109), and a light guide (110) disposed between the scintillator (109) and the light detector (111), wherein the area of the light detection surface (111a) is larger than the area of the signal electron detection surface (109a).

The invention belongs to the technical field of semiconductor device preparation, and discloses a depletion type nickel-zinc-oxygen charged particle detector and a preparation method thereof. The depletion type nickel-zinc-oxygen charged particle detector comprises an aluminum oxide single crystal, a nickel-zinc-oxygen region, a low-resistance zinc oxide region, an insulating layer and a metal electrode. The depletion type nickel-zinc-oxygen charged particle detector is designed, the concentration of a carrier at the back bottom of a detection sensitive region is controlled, the suppression of leakage circuit noise is realized by using a depletion region, meanwhile, the control of a conductive channel is realized, and an effective and simple process manufacturing technology is provided. The preparation problem of an oxide alpha particle detector with a high signal-to-noise ratio characteristic is solved, and the development of a novel depletion type nickel-zinc-oxygen charged particle detector is realized.

Disclosed are systems and methods for enhancing imaging resolution by reducing crosstalk between detection elements of a secondary charged particle detector in a multi-beam device. The multi-beam device includes an electro-optical system for projecting multiple secondary charged particle beams from a sample onto a charged particle detector (140). The electro-optical system includes a first pre-limiting aperture plate (155P) and a beam limiting aperture array (155), wherein the first pre-limiting aperture plate (155P) includes a first aperture configured to block peripheral charged particles of the multiple secondary charged particle beams; and the beam limiting aperture array (155) includes a second aperture configured to trim the multiple secondary charged particle beams. The charged particle detector may include multiple detection elements (140_1, 140_2, 140_3), wherein one of the multiple detection elements is associated with a corresponding trimmed beam of the multiple secondary charged particle beams.

And electron counting and energy-enhanced diffraction analysis. A method for identifying phase characteristics of a sample is described. The method includes acquiring backscattered electron data of the sample using a direct charged particle detector. The direct charged particle detector includes an array of pixels and is configured to count the number of backscattered electrons detected by each pixel of the array or measure the energy of each backscattered electron detected by each pixel of the array when an electron beam is incident on the sample. The backscattered electron data includes data sets, each data set containing a number of backscattered electrons or measurement energy detected by each pixel of the array when the electron beam is incident on a respective region of the sample. The method further includes determining a respective statistical electronic characteristic or a respective electron spectrum for each data set, and identifying a respective phase characteristic for at least some regions of the sample based on the determined statistical electronic characteristic or the determined electron spectrum. A system for identifying phase characteristics of a sample is also described.

The invention relates to a method of manufacturing a charged particle detector comprising the steps of providing a sensor device, such as an active pixel sensor (APS). The sensor device comprises at least a substrate layer and a sensitive layer. The method further comprises the steps of providing a mechanical support layer and connecting the mechanical support layer to the sensor device. After the connection, the sensitive layer is located between the substrate layer and the mechanical support layer. By connecting the mechanical support layer, it is possible to thin the substrate layer for forming the charged particle detector. The mechanical support layer forms part of the manufactured detector. The detector can be used for charged particle microscopy, such as a transmission electron microscope for direct electron detection.

1. A charged particle detector comprising: an array of sensing elements arranged in a column configured to generate an electrical signal in response to a charged particle; an array of optical modulators each connected to a respective one of the sensing elements, the optical modulators configured to modulate a sensing light beam in response to the electrical signal; a plurality of waveguides configured to direct each of a plurality of sensing light beams through the column of optical modulators; a beam combiner configured to combine the plurality of sensing light beams that have passed through each column of optical modulators into a combined beam; and a readout unit configured to measure the modulation of the combined beam to detect charged particles incident on the sensing elements.

This charged particle detector comprises: a channel-type first multiplication unit having a channel unit that emits electrons in response to incidence of charged particles, multiplies the emitted electrons, and emits the multiplied electrons; a discrete-type second multiplication unit that is disposed to face the first multiplication unit in a prescribed direction, and multiplies the electrons emitted from the channel unit of the first multiplication unit; and an anode that collects the multiplied electrons. The second multiplication unit includes a reduction unit formed such that, on at least one cross section along the prescribed direction, the width decreases toward the first multiplication unit in a direction orthogonal to the prescribed direction. The reduction unit has a pair of surfaces formed to approach each other closer toward the first multiplication unit on the cross section. The second multiplication unit multiplies the electrons that are emitted from the channel unit of the first multiplication unit and are incident on the pair of surfaces.

Charged-particle detectors using scintillators are situated in a vacuum chamber and include a photomultiplier tube (PMT) that is situated at or near a pole piece of a magnetic objective lens. To maintain satisfactory PMT operation, the PMT is situated within a PMT shield constructed of a high saturation value magnetic material. With the disclosed shields, PMT operation in strong magnetic fields is satisfactory, even for magnetic field magnitudes of at least 0.5 T.

A charged particle detector includes an array of sensing elements that are selectively grouped from one another by a switching matrix. The sensing elements may be grouped in a shape and position corresponding to an expected shape and position of the beam spot to be detected. In the detection process, the sensing element group can be updated in real time. The updating may include adding a peripheral sensing element to the group and removing the peripheral sensing element from the group. If it is determined that the sensing element receives sufficient radiation from the beam spot, the sensing element may be added. If it is determined that the sensing element receives insufficient radiation from the beam spot, the sensing element may be removed. The determination may be made by a threshold circuit located within each sensing element.

A detector may be provided with a sensing element or an array of sensing elements, each of the sensing elements may have a corresponding gain element. A substrate may be provided having a sensing element and a gain element integrated together. The gain element may include a section in which, along a direction perpendicular to an incidence direction of an electron beam, a region of first conductivity is provided adjacent to a region of second conductivity, and a region of third conductivity may be provided adjacent to the region of second conductivity. The sensing element may include a section in which, along the incidence direction, a region of fourth conductivity is provided adjacent to an intrinsic region of the substrate, and the region of second conductivity may be provided adjacent to the intrinsic region.

To provide a charged particle detector that can improve spatial resolution while avoiding a decrease in electron utilization efficiency. [Solution] The charged particle detector 1 comprises a microchannel plate 10 having an input surface 10a into which photoelectrons Pe are incident, multiplication units 11 and 12 that perform electron multiplication based on the input of photoelectrons Pe while maintaining positional information of the photoelectrons Pe with respect to the input surface 10a, and an output surface 10b that outputs electrons e1 multiplied by the multiplication units 11 and 12; a resistive anode 20 that receives the incident electrons e1 output from the output surface 10b and outputs a charge signal corresponding to the incident position of the electrons e1; and a mesh anode 30 arranged in the spatial region between the output surface 10b and the resistive anode 20, having an opening 32 that allows the electrons e1 output from the output surface 10b to pass through, and for collecting electrons e2 output from the resistive anode 20.

A method for determining parameters of a thickness function to estimate a thickness of a sample is provided. The thickness function defines a relationship between the sample thickness and statistical electronic characteristics. The method includes acquiring backscattered electron data of the sample using a direct charged particle detector, where the direct charged particle detector includes an array of pixels and is configured to count a number of backscattered electrons detected by each pixel of the array when an electron beam is incident on the sample. The backscattered electronic data includes a data set. The data set includes a number of backscattered electrons detected by each pixel of the array when the electron beam is incident on a respective region of the sample. The method further includes determining a respective statistical electronic feature for each data set, and fitting a known thickness and the determined statistical electronic features to the thickness function to determine a parameter of the thickness function. Wherein the thickness of each corresponding area of the sample is known. A system for determining parameters of a thickness function to estimate the thickness of a sample is also described.

Components of scientific analytical equipment and to complete items of analytic equipment. An apparatus and methods useful for detecting an ion in mass spectrometry applications are provided. The apparatus may include an electron multiplier having a high sensitivity and low sensitivity sections, or the combination of an electron multiplier with a separately powered conversion dynode (and particularly a high energy conversion dynode), or the combination of a conversion dynode that is physically incorporated within or about an electron multiplier.

Systems and methods for fabricating a substrate for a charged particle detector in a charged particle beam apparatus are disclosed. The substrate may include a charge sensing element formed on a first surface of the substrate and configured to detect charged particles derived from a sample; and a plurality of transistors formed in a first region of a second surface of the substrate, the second surface being opposite the first surface, where a top surface of each transistor of the plurality of transistors is coplanar with a top surface of the first region and the second surface of the substrate.

An electron detector according to the present invention comprises an electron detection unit that includes a first electrode, a resin sheet that is provided on one side in the Z direction relative to the first electrode, a second electrode that is opposite the first electrode with the resin sheet therebetween, an insulating substrate that is provided on the one side in the Z direction relative to the second electrode and supports the electron detection unit, the resin sheet, and the second electrode, an output unit that is provided on the one side in the Z direction relative to the insulating substrate, is electrically connected to the second electrode, and outputs an electrical signal, and a support part that supports the output unit such that the output unit and the second electrode are opposite with the insulating substrate therebetween and a space is formed between the output unit and the insulating substrate.

A charged particle detector (1) comprises: a semiconductor detector (3) which includes an anode (3a) and a cathode (3b), and in which a first voltage is supplied to the cathode (3b) and a second voltage lower than the first voltage is supplied to the anode (3a); a conductor part (8) connected to a reference potential GND which is at a potential lower than the second voltage; and a protection part (6) which is disposed between the anode (3a) and the conductor part (8) and has applied thereto a low potential which is a potential having an absolute value lower than the absolute value of the second voltage. The protection part (6) has a resistor (62).

The invention relates to magnetic shielding of photomultipliers in magnetic immersion fields. A charged particle detector using a scintillator is disposed in a vacuum chamber and includes a photomultiplier tube (PMT) disposed at or near a pole piece of a magnetic objective. To maintain satisfactory PMT operation, the PMT is disposed within a PMT shield constructed from a high saturation value magnetic material. With the disclosed shield, PMT operation in strong magnetic fields is satisfactory even for magnetic field amplitudes of at least 0.5 T.

The present invention discloses a low-capacitance silicon pixel detector array chip and a manufacturing method thereof, belonging to the technical field of silicon detectors. The technical problem to be solved is how to improve the energy and position resolution of a soft X-ray or high-energy charged particle detector array chip. It is composed of a pixel unit array. Each pixel unit includes: a substrate, which is a silicon wafer substrate. One side of the substrate serves as a readout surface, and the side opposite to the readout surface serves as a receiving surface; an oxide layer, formed on the readout surface of the substrate and etched with a groove region, and the groove region includes a circular groove region; a cathode electrode, located within the groove region and embedded in the readout surface of the substrate, for serving as a collection electrode; a protection electrode, in a circular ring shape, embedded in the readout surface of the substrate and surrounding the outer periphery of the cathode electrode, for spacing the cathode electrodes between adjacent pixel units; and an anode electrode, embedded in the incident surface of the substrate and covering the entire incident surface of the substrate.

A charged particle microscope that incorporates dual data stream output interfaces within its imaging system. These interfaces enable the microscope to capture and process data from the charged particle camera in two distinct ways, leading to enhanced imaging capabilities and improved flexibility. This invention has the potential to significantly advance the field of charged particle microscopy and find applications in various scientific and industrial settings.

Systems, components, and methods for protecting charged particle detectors from damage are described. The filter may include a frame and a carbon material membrane. The film may define a first surface, a second surface opposite the first surface, and a diaphragm extending through the film from the first surface to the second surface. The frame may be configured to couple with a charged particle detector disposed in a charged particle beam column, the charged particle detector defining an absorption surface oriented toward the first surface. The filter may be configured to shield the absorbent surface from particles incident on the second surface. The particles may include electrons, ions, and photons.

To provide a processed liquid evaluation method with which it is possible to quickly manage whether a non-volatile impurity is included in a processed liquid processed by a filter device.SOLUTION: A processed liquid evaluation method includes a step of measuring, with a charged particle detector 16, a non-volatile impurity in a filter-processed liquid obtained by passing liquid to be processed through a filter device 10, and managing the non-volatile impurity in the filter-processed liquid.SELECTED DRAWING: Figure 1

A detector can be provided with an array of sensing elements. The detector can include a semiconductor substrate including the array, and circuitry configured to count a number of charged particles incident on the detector. The circuitry of the detector can be configured to process output from the plurality of sensing elements, and to increase a counter in response to a charged particle arrival event on a sensing element in the array. Various counting modes can be used. Counting can be based on an energy range. A number of charged particles in a certain energy range can be counted, and an overflow flag can be set when an overflow is encountered in a sensing element. The circuitry can be configured to determine a timestamp of a respective charged particle arrival event occurring at each sensing element. A size of the sensing elements can be determined based on a standard for implementing charged particle counting.