26 results about "Charged particle detectors" patented technology

Methods and apparatus are disclosed for concurrent digital autoradiography of alpha-particle events and positron events using a spatially resolving charged particle detector and a gamma-ray detector. Alpha particles and positrons are detected by the charged particle detector. Positrons are identified based on coincidence with gamma-ray events. A positron-emission autoradiograph is formed based on positron positions. Alpha particles, both coincident and anticoincident with positrons, are identified based on energy deposition patterns. An alpha-emission autoradiograph is formed based on alpha-particle positions and energies. Separation of coincident alpha and positron events recorded by the charged particle detector improves position detection accuracy. Validation of positron imaging for alpha-emitter distribution or dosage, based on correlation of respective autoradiographs, is described. Variations for particle identification based on isotropy, energy, coincidence, or anticoincidence are presented. Disclosed techniques are applicable to alpha-emitting radionuclides with complex decay chains.

The invention belongs to the technical field of semiconductor device preparation, and discloses a depletion type nickel-zinc-oxygen charged particle detector and a preparation method thereof. The depletion type nickel-zinc-oxygen charged particle detector comprises an aluminum oxide single crystal, a nickel-zinc-oxygen region, a low-resistance zinc oxide region, an insulating layer and a metal electrode. The depletion type nickel-zinc-oxygen charged particle detector is designed, the concentration of a carrier at the back bottom of a detection sensitive region is controlled, the suppression of leakage circuit noise is realized by using a depletion region, meanwhile, the control of a conductive channel is realized, and an effective and simple process manufacturing technology is provided. The preparation problem of an oxide alpha particle detector with a high signal-to-noise ratio characteristic is solved, and the development of a novel depletion type nickel-zinc-oxygen charged particle detector is realized.

And electron counting and energy-enhanced diffraction analysis. A method for identifying phase characteristics of a sample is described. The method includes acquiring backscattered electron data of the sample using a direct charged particle detector. The direct charged particle detector includes an array of pixels and is configured to count the number of backscattered electrons detected by each pixel of the array or measure the energy of each backscattered electron detected by each pixel of the array when an electron beam is incident on the sample. The backscattered electron data includes data sets, each data set containing a number of backscattered electrons or measurement energy detected by each pixel of the array when the electron beam is incident on a respective region of the sample. The method further includes determining a respective statistical electronic characteristic or a respective electron spectrum for each data set, and identifying a respective phase characteristic for at least some regions of the sample based on the determined statistical electronic characteristic or the determined electron spectrum. A system for identifying phase characteristics of a sample is also described.

The invention relates to a method of manufacturing a charged particle detector comprising the steps of providing a sensor device, such as an active pixel sensor (APS). The sensor device comprises at least a substrate layer and a sensitive layer. The method further comprises the steps of providing a mechanical support layer and connecting the mechanical support layer to the sensor device. After the connection, the sensitive layer is located between the substrate layer and the mechanical support layer. By connecting the mechanical support layer, it is possible to thin the substrate layer for forming the charged particle detector. The mechanical support layer forms part of the manufactured detector. The detector can be used for charged particle microscopy, such as a transmission electron microscope for direct electron detection.

This charged particle detector comprises: a channel-type first multiplication unit having a channel unit that emits electrons in response to incidence of charged particles, multiplies the emitted electrons, and emits the multiplied electrons; a discrete-type second multiplication unit that is disposed to face the first multiplication unit in a prescribed direction, and multiplies the electrons emitted from the channel unit of the first multiplication unit; and an anode that collects the multiplied electrons. The second multiplication unit includes a reduction unit formed such that, on at least one cross section along the prescribed direction, the width decreases toward the first multiplication unit in a direction orthogonal to the prescribed direction. The reduction unit has a pair of surfaces formed to approach each other closer toward the first multiplication unit on the cross section. The second multiplication unit multiplies the electrons that are emitted from the channel unit of the first multiplication unit and are incident on the pair of surfaces.

To provide a charged particle detector that can improve spatial resolution while avoiding a decrease in electron utilization efficiency. [Solution] The charged particle detector 1 comprises a microchannel plate 10 having an input surface 10a into which photoelectrons Pe are incident, multiplication units 11 and 12 that perform electron multiplication based on the input of photoelectrons Pe while maintaining positional information of the photoelectrons Pe with respect to the input surface 10a, and an output surface 10b that outputs electrons e1 multiplied by the multiplication units 11 and 12; a resistive anode 20 that receives the incident electrons e1 output from the output surface 10b and outputs a charge signal corresponding to the incident position of the electrons e1; and a mesh anode 30 arranged in the spatial region between the output surface 10b and the resistive anode 20, having an opening 32 that allows the electrons e1 output from the output surface 10b to pass through, and for collecting electrons e2 output from the resistive anode 20.

A method for determining parameters of a thickness function to estimate a thickness of a sample is provided. The thickness function defines a relationship between the sample thickness and statistical electronic characteristics. The method includes acquiring backscattered electron data of the sample using a direct charged particle detector, where the direct charged particle detector includes an array of pixels and is configured to count a number of backscattered electrons detected by each pixel of the array when an electron beam is incident on the sample. The backscattered electronic data includes a data set. The data set includes a number of backscattered electrons detected by each pixel of the array when the electron beam is incident on a respective region of the sample. The method further includes determining a respective statistical electronic feature for each data set, and fitting a known thickness and the determined statistical electronic features to the thickness function to determine a parameter of the thickness function. Wherein the thickness of each corresponding area of the sample is known. A system for determining parameters of a thickness function to estimate the thickness of a sample is also described.

An electron detector according to the present invention comprises an electron detection unit that includes a first electrode, a resin sheet that is provided on one side in the Z direction relative to the first electrode, a second electrode that is opposite the first electrode with the resin sheet therebetween, an insulating substrate that is provided on the one side in the Z direction relative to the second electrode and supports the electron detection unit, the resin sheet, and the second electrode, an output unit that is provided on the one side in the Z direction relative to the insulating substrate, is electrically connected to the second electrode, and outputs an electrical signal, and a support part that supports the output unit such that the output unit and the second electrode are opposite with the insulating substrate therebetween and a space is formed between the output unit and the insulating substrate.

Systems, components, and methods for protecting charged particle detectors from damage are described. The filter may include a frame and a carbon material membrane. The film may define a first surface, a second surface opposite the first surface, and a diaphragm extending through the film from the first surface to the second surface. The frame may be configured to couple with a charged particle detector disposed in a charged particle beam column, the charged particle detector defining an absorption surface oriented toward the first surface. The filter may be configured to shield the absorbent surface from particles incident on the second surface. The particles may include electrons, ions, and photons.

To provide a processed liquid evaluation method with which it is possible to quickly manage whether a non-volatile impurity is included in a processed liquid processed by a filter device.SOLUTION: A processed liquid evaluation method includes a step of measuring, with a charged particle detector 16, a non-volatile impurity in a filter-processed liquid obtained by passing liquid to be processed through a filter device 10, and managing the non-volatile impurity in the filter-processed liquid.SELECTED DRAWING: Figure 1

A detector can be provided with an array of sensing elements. The detector can include a semiconductor substrate including the array, and circuitry configured to count a number of charged particles incident on the detector. The circuitry of the detector can be configured to process output from the plurality of sensing elements, and to increase a counter in response to a charged particle arrival event on a sensing element in the array. Various counting modes can be used. Counting can be based on an energy range. A number of charged particles in a certain energy range can be counted, and an overflow flag can be set when an overflow is encountered in a sensing element. The circuitry can be configured to determine a timestamp of a respective charged particle arrival event occurring at each sensing element. A size of the sensing elements can be determined based on a standard for implementing charged particle counting.

Systems and methods of observing a sample using a charged-particle beam apparatus in voltage contrast mode are disclosed. The charged-particle beam apparatus comprises a charged-particle source, an optical source, a charged-particle detector configured to detect charged particles, and a controller having circuitry configured to apply a first signal to cause the optical source to generate the optical pulse, apply a second signal to the charged-particle detector to detect the second plurality of charged particles, and adjust a time delay between the first and the second signals. In some embodiments, the controller having circuitry may be further configured to acquire a plurality of images of a structure, to determine an electrical characteristic of the structure based on the rate of gray level variation of the plurality of images of the structure, and to simulate, using a model, a physical characteristic of the structure based on the determined electrical characteristic.

This charged particle detector comprises: a microchannel plate having an input surface through which charged particles enter, a multiplication unit that performs electron multiplication on the basis of input of the charged particles while maintaining positional information of the charged particles with respect to the input surface, and an output surface through which electrons multiplied by the multiplication unit are outputted; a resistive anode that, when electrons outputted through the output surface enters therein, outputs a charge signal corresponding to the entering position of the electrons; and an anode that is disposed in a spatial region between the output surface and the resistive anode, has an electron passage unit through which the electrons outputted through the output surface are allowed to pass, and is for collecting the electrons outputted from the resistive anode.

The embodiment of the invention provides a detection device, system and method, relates to the technical field of integrated circuits, and is used for improving the detection precision and detection efficiency of detection equipment. The detection device comprises a machine table; a controller, an optical detector and a charged particle detector are arranged on the machine table; the controller receives detection data generated when the optical detector performs optical detection on the semiconductor sample, wherein the detection data comprises position information of at least one defect on the semiconductor sample; the controller outputs the first position information to the charged particle detector, and controls the charged particle detector to detect the defect indicated by the first position information on the semiconductor sample through charged particle beam detection; wherein the defect indicated by the first position information comprises at least one defect in the detection data.

An improved readout circuit for a charged particle detector and a method for operating the readout circuit are disclosed. An improved circuit comprises an amplifier configured to receive a signal representing an output of a sensor layer and comprising a first input terminal and an output terminal, a capacitor connected between the first input terminal and the output terminal, and a resistor connected in parallel with the capacitor between the first input terminal and the output terminal. The circuit can be configured to operate in a first mode and a second mode. The capacitor can be adjustable using a capacitance value of the capacitor to enable control of a gain of the circuit operating in the first mode and control of a bandwidth of the circuit operating in the second mode.

A charged particle beam apparatus includes a charged particle beam source, a charged particle optical system, a charged particle detector, and a controller. The charged particle beam source generates a beam of primary charged particles. The charged particle optical system directs the beam of primary charged particles at a sample surface. The charged particle detector detects secondary charged particles associated with interaction of the primary charged particles with the sample surface. The controller determines an image of the sample surface based on the detected secondary charged particles. The image includes an array of pixels. The controller also determines an autocorrelation function between a signal represented by a line of the pixels and delayed copies of the signal. The controller also determines a bandwidth of the charged particle detector based on the autocorrelation function.

Systems, components, and methods are described for protecting a charged particle detector against damage. A filter can include a frame and a membrane of carbon material. The membrane can define a first surface, a second surface opposing the first surface, and an aperture extending through the membrane from the first surface to the second surface. The frame can be configured to couple with a charged particle detector disposed in a charged particle beam column, the charged particle detector defining an absorption surface oriented toward the first surface. The filter can be configured to shield the absorption surface from particles incident on the second surface. The particles can include electrons, ions, or photons.

A charged particle detector (1) is provided with: a semiconductor detector (3) that includes an anode (3a) and a cathode (3b), supplies a first voltage to the cathode (3b), and supplies a second voltage lower than the first voltage to the anode (3a); a conductor part (8) connected to a reference potential GND, the reference potential GND being a potential lower than the second voltage; and a protection part (6) which is disposed between the anode (3a) and the conductor part (8) and to which a low potential, which is a potential having an absolute value lower than that of the second voltage, is applied. The protection section (6) has a resistor (62).

A method comprises determining parameters of a thickness function for estimating a thickness of a sample. The thickness function defines a relationship between the thickness of the sample and a statistical electron characteristic. The method comprises obtaining backscattered electron data of the sample using a direct charged particle detector comprising an array of pixels and configured to count the number of backscattered electrons detected by each pixel of the array when an electron beam is incident upon the sample. Backscattered electron data sets can include the number of backscattered electrons detected by each pixel of the array when the electron beam is incident upon a respective region of the sample. The method further comprises determining, for each data set, a respective statistical electron characteristic, and then fitting the known thicknesses and the determined statistical electron characteristic to the thickness function to determine the parameters of the thickness function.

Methods identify phase characteristics of a sample. Methods comprise obtaining backscattered electron data of the sample using a direct charged particle detector. Direct charged particle detectors comprise an array of pixels and is configured to count the number of backscattered electrons, or to measure the energy of each backscattered electron, detected by each pixel of the array when an electron beam is incident upon the sample. Backscattered electron data sets comprise the number of, or the measured energies of, the backscattered electrons detected by each pixel of the array when the electron beam is incident upon a respective region of the sample. Methods further comprise determining, for each data set, a respective statistical electron characteristic or a respective electron energy spectrum, and identifying a respective phase characteristic for at least some of the regions of the sample, based on the determined statistical electron characteristics or the determined electron energy spectra.

This electron detector comprises: an electron detecting unit that includes a first electrode; a resin sheet; a second electrode that faces the first electrode with the resin sheet interposed therebetween; a third electrode that is separated from the first electrode in the X direction; a fourth electrode that faces the third electrode with the resin sheet interposed therebetween; an insulating substrate that supports the electron detecting unit, the resin sheet, the second electrode, the third electrode, and the fourth electrode; and an output unit that outputs an electrical signal. The output unit includes an internal conductor that is electrically connected to the second electrode, and an external conductor that is electrically connected to the fourth electrode, and when viewed from the Z direction, the area where the external conductor overlaps the fourth electrode is larger than the area where the external conductor overlaps the second electrode.

Disclosed are systems and methods for imaging a sample using a charged particle beam device. The charged particle beam device may include a charged particle source configured to generate primary charged particles, the primary charged particles forming a primary charged particle beam along a primary optical axis, and a charged particle detector including a plurality of concentric segments of a charged particle sensitive material configured to detect charged particles emitted from the sample after interaction of the primary charged particle beam with the sample, each segment of the plurality of concentric segments configured to collect emitted charged particles having an energy level range and a predominant energy level.

This light emitting body (10) converts incident charged particles into light, and is provided with a multiple quantum well structure (14C) that emits light by the incidence of charged particles. The well layer (141) constituting the multiple quantum well structure (14C) has a thickness of 0.2 nm or more and less than 1.5 nm. The concentration of an additive added to a barrier layer (142) and a well layer (141) constituting the multiple quantum well structure (14C) is greater than 4 * 1018 cm <-3 > and 1 * 1020 cm <-3 > or less.

A charged particle beam apparatus includes a charged particle beam source, a charged particle optical system, a charged particle detector, and a controller. The charged particle optical directs a beam of primary charged particles at a sample surface. The controller determines a contour of a target feature disposed at the sample surface based on detected charged particles at the detector. A first layer structure and a second layer structure of the target feature are based on a design pattern that includes a first layer design pattern and a second layer design pattern. The controller determines an alignment position of the first layer structure, via an inverse die-to-database (iD2DB) alignment that includes a search for at least a portion of the first layer design pattern in a search area defined by the determined contour of the target feature, an alignment position of the second layer structure, and a difference thereof.

The invention discloses a radioactive substance monitoring module and a monitoring method, and belongs to the technical field of radiation monitoring, the monitoring module comprises a sampling cover and a casing, and a sampling assembly, a charged particle detector and a signal processor which are arranged in the casing, the sampling assembly is used for collecting radioactive particles; the charged particle detector is used for sensing charged particles emitted by the radioactive particles, and the signal processing assembly is electrically connected with the charged particle detector and used for receiving signals output by the charged particle detector. The monitoring method comprises the steps of starting the transmission mechanism; the air suction fan is started, so that air enters the shell through the sampling cover and is captured by the filter material; and acquiring radioactive energy spectrum analysis data output by the signal processing assembly. The vertical stacking design of the signal processing assembly, the charged particle detector and the suction fan is innovatively adopted, the axial size of the product is greatly reduced, internal gas circuit connection is omitted, the design requirements for light weight and miniaturization are met, and the device is suitable for being carried by a small unmanned aerial vehicle for radioactive substance monitoring.

A charged particle beam system may include a detector. A package for a detector may have a package body that includes two sets of pins, each of the sets of pins including two pins. Each pin of the sets of pins may be configured to be connected to one of two terminals of a sensing element. Pins of different sets may be configured to be connected to a different one of the two terminals of the diode. The sets of pins may be arranged with a symmetry such that magnetic fields generated when current passes through the sets of pins is reduced due to the symmetry.