The invention discloses a parameter optimization method for
photoresist, which comprises the following steps: collecting process multi-
source data, preprocessing to construct a
data set, and generating environment and equipment disturbance vectors;
photoresist material data are extracted, multiple features are fused in a
dimensionality reduction mode, and
photoresist dynamic vectors are generated; acquiring
process time sequence data, inputting the
process time sequence data into the improved CycleNet network, and extracting process dynamic characteristics; constructing a
tensor input solving unit, calculating the
acid concentration and the developing thickness, and predicting the
imaging quality; the photoresist dynamic vector is evolved, and a complete disturbance set is generated in combination with the multiple disturbance vectors; and constructing a
robust optimization target, evaluating a parameter imaging effect, and obtaining optimal process parameter output. According to the method,
robust optimization and stable control of key parameters of the photoetching process are realized by constructing a parameter optimization process fusing photoresist dynamic evolution,
process time sequence disturbance and multi-source disturbance
perception.