280 results about "Faraday cup" patented technology

The invention discloses a near-field plume mass-spectroscopic diagnostic E*B probe based on the Faraday cup and belongs to the technical field of plasma mass-spectroscopic diagnosis. The probe mainly applied to measuring near-field plumes of an ion thruster and of a Hall thruster comprises a central frame, ferrite permanent magnets, a flat electrode plate, an electrode plate holder, a collimator tube, a drift tube, a Faraday cup, six carbon steel shells and an anti-sputtering heat-insulating layer. According to the connectional relation, the central frame is used as a core part, the ferrite permanent magnets are distributed on upper and lower surfaces of the central frame, the electrode plate is fixed in the central frame, and an orthogonal electromagnetic field area is formed. The six carbon steel shells are used for packaging, and the front ends of the shells are coated with an anti-sputtering heat-insulating layer. The collimator tube of stainless steel and the drift tube are fitly fixed to the centers of two ends of the central frame through shaft holes. Ions different in valence are screened by adjusting voltage among the electrode plates, univalent and bivalent ion currents are acquired with the Faraday cup of aluminum, and the ratio of near-field plum bivalent ions is acquired by analytical computing.

A charged particle beam detection system that includes a Faraday cup detector array (FCDA) for position-sensitive charged particle beam detection is described. The FCDA is combined with an electronic multiplexing unit (MUX) that allows collecting and integrating the charge deposited in the array, and simultaneously reading out the same. The duty cycle for collecting the ions is greater than 98%. This multiplexing is achieved by collecting the charge with a large number of small and electronically decoupled Faraday cups. Because Faraday cups collect the charge independent of their charge state, each cup is both a collector and an integrator. The ability of the Faraday cup to integrate the charge, in combination with the electronic multiplexing unit, which reads out and empties the cups quickly compared to the charge integration time, provides the almost perfect duty cycle for this position-sensitive charged particle detector. The device measures further absolute ion currents, has a wide dynamic range from 1.7 pA to 1.2 μA with a crosstalk of less than 750:1. The integration of the electronic multiplexing unit with the FCDA further allows reducing the number of feedthroughs that are needed to operate the detector.

The invention discloses a method for testing conductivity of medium material, wherein the method comprises the following steps of: positioning an electric potential probe at a zero electric potential position above a sample after the preparation before testing is finished; confirming the placing position of the sample, confirming the position coordinate of an electric potential measuring point bya probe driving mechanism, then closing a vacuum jar, turning on the power of an electric gun, and performing electronic irradiation to the sample via a Faraday cut test; quickly descending an electric potential meter probe to the front surface of the sample every 10 minutes to perform inducted non-contact measurement, wherein the data measured by a micro galvanometer and the electric potential probe is waved between negative 0.5% and positive 0.5%, then the charge of the sample is regarded as saturation; turning off the electric gun, attenuating the similar process via a tapping index form in the sample interior electric charge Q and measuring the electric potential decay process of the sample; in a word, the attenuation relationship of the surface electric potential of the sample along time is measured by a surface electric potential probe, and the conductivity of the sample can be calculated according to the sample surface attenuated electric potential at different time. The conductivity testing equipment in the invention can be applied to hazard assessment of deep charging, and also can provide valuable engineering data for the protection of deep charging or discharging.

The invention discloses a measurement system and a measurement method of a secondary electron emission yield of dielectric material. The measurement system comprises a Faraday cup and a pulse electron gun, wherein an incident beam generated by the pulse electron gun outside the Faraday cup irradiates on a sample through an electronic entrance port on a tube, and an automatic voltage regulator circuit is electrically connected between a sample back electrode and an earth wire, so that the level on the sample surface is kept constant relative to a potential difference between the electron guns. The voltage regulating range of the voltage adjustor circuit is controlled by a feedback control circuit in real time, so as to ensure that charging potential of the sample is compensated in real time, and current probes for measuring net collection current and secondary electron current are respectively connected between the sample and a voltage controlled power source of the voltage regulator circuit, and connected with the Faraday cup. According to the measurement system and the method disclosed by the invention, are simple extra consumer power equipment such as an ion source and the like and related experimental links are not needed, the measurement efficiency is high, and the measurement is continuous without stopping to carry out work such as energy dissipation, surface level measurement and the like after each irradiation pulse, and the measurement error is small.

The invention discloses a method and a device for accurately detecting and correcting parallelism of an ion beam, relates to an ion implantation machine, and belongs to the field of semiconductor integrated circuit device manufacturing. The device for detecting and correcting the parallelism comprises a parallelism correcting magnet, a correcting magnet power supply, a moving Faraday cup, a sampling Faraday cup, a dosage detector, a digital scanning generator, a motor motion controller, and a control computer. The parallelism correcting magnet is arranged at a proper position behind an electrostatic scanning plate, and a magnet exciting coil of the parallelism correcting magnet is connected with the correcting magnet power supply. The output of the sampling Faraday cup is connected with the dosage detector; the output of the digital scanning generator is connected with a scanning amplifier and the scanning amplifier is connected with the electrostatic scanning plate. The output of the motor motion controller is connected with a drive motor of the moving Faraday cup. The moving Faraday cup is driven by the drive motor and is capable of moving along the X horizontal direction in a target chamber. The correcting magnet power supply, the moving Faraday cup, the sampling Faraday cup, the dosage detector, the digital scanning generator, the motor motion controller are connected with the control computer, and are coordinated and controlled by the computer. The method for detecting and correcting the parallelism of the ion beam comprises the following steps of data detection, data processing, parameter adjustment, and the like. Error data of the parallelism of the ion beam is detected by moving the Faraday cup back and forth, and the parallelism of the scanning ion beam reaches an error range by adjusting the setting current of the magnet power supply repeatedly. The method and the device can automatically realize accurate detection and correction of the parallelism.

The invention discloses a Faraday cup sensing device used in an electron beam processing beam quality test. The Faraday cup sensing device comprises: a Faraday cup, an aluminum shell and a signal switching and amplification circuit. The Faraday cup and the signal switching and amplification circuit are arranged in the aluminum shell. The signal switching and amplification circuit is connected with an acquisition card of an industrial personal computer which is out of a vacuum chamber of an electron beam quality test system. Electron beam of the electron beam quality test system is collected by the Faraday cup and is flowed into the signal switching and amplification circuit through a cable. A weak current signal is processed by the signal switching and amplification circuit, then is converted into a digital signal by the acquisition card and is stored in the industrial personal computer. The Faraday cup comprises two electron beam aperture collection electrodes and one electron beam seam collection electrode. The aluminum shell comprises: an aluminum alloy shell and an aluminum alloy cover. By using the device, collection efficiency of the electron beam can be raised; multiple vacuum-pumping processes can be avoided. Amplifying the signal can obviously raise a signal to noise ratio.

A charged particle beam detection system that includes a Faraday cup detector array (FCDA) for position-sensitive charged particle beam detection is described. The FCDA is combined with an electronic multiplexing unit (MUX) that allows collecting and integrating the charge deposited in the array, and simultaneously reading out the same. The duty cycle for collecting the ions is greater than 98%. This multiplexing is achieved by collecting the charge with a large number of small and electronically decoupled Faraday cups. Because Faraday cups collect the charge independent of their charge state, each cup is both a collector and an integrator. The ability of the Faraday cup to integrate the charge, in combination with the electronic multiplexing unit, which reads out and empties the cups quickly compared to the charge integration time, provides the almost perfect duty cycle for this position-sensitive charged particle detector. The device measures further absolute ion currents, has a wide dynamic range from 1.7 pA to 1.2 μA with a crosstalk of less than 750:1. The integration of the electronic multiplexing unit with the FCDA further allows reducing the number of feedthroughs that are needed to operate the detector.

A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.

A technique for using an improved shield ring in plasma-based ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for plasma-based ion implantation, such as radio frequency plasma doping (RF-PLAD). The apparatus and method may comprise a shield ring positioned on a same plane as and around a periphery of a target wafer, wherein the shield ring comprises an aperture-defining device for defining an area of at least one aperture, a Faraday cup positioned under the at least one aperture, and dose count electronics connected the Faraday cup for calculating ion dose rate. The at least one aperture may comprise at least one of a circular, arc-shaped, slit-shaped, ring-shaped, rectangular, triangular, and elliptical shape. The aperture-defining device may comprise at least one of silicon, silicon carbide, carbon, and graphite.