The invention discloses a method and a device for accurately detecting and correcting parallelism of an
ion beam, relates to an
ion implantation
machine, and belongs to the field of
semiconductor integrated circuit device manufacturing. The device for detecting and correcting the parallelism comprises a parallelism correcting
magnet, a correcting
magnet power supply, a moving
Faraday cup, a sampling
Faraday cup, a dosage
detector, a digital scanning generator, a motor
motion controller, and a control computer. The parallelism correcting
magnet is arranged at a proper position behind an electrostatic scanning plate, and a magnet exciting coil of the parallelism correcting magnet is connected with the correcting magnet power supply. The output of the sampling
Faraday cup is connected with the dosage
detector; the output of the digital scanning generator is connected with a scanning
amplifier and the scanning
amplifier is connected with the electrostatic scanning plate. The output of the motor
motion controller is connected with a
drive motor of the moving Faraday cup. The moving Faraday cup is driven by the
drive motor and is capable of moving along the X horizontal direction in a target chamber. The correcting magnet power supply, the moving Faraday cup, the sampling Faraday cup, the dosage
detector, the digital scanning generator, the motor
motion controller are connected with the control computer, and are coordinated and controlled by the computer. The method for detecting and correcting the parallelism of the
ion beam comprises the following steps of
data detection,
data processing, parameter adjustment, and the like. Error data of the parallelism of the
ion beam is detected by moving the Faraday cup back and forth, and the parallelism of the scanning
ion beam reaches an error range by adjusting the setting current of the magnet power supply repeatedly. The method and the device can automatically realize accurate detection and correction of the parallelism.