The invention relates to the field of
microwave vacuum electronic amplification devices, and particularly provides a double-staggered coupled cavity expansion interaction
klystron with a trapezoidal sub-
wavelength hole high-frequency structure, which comprises an input cavity, a plurality of middle cavities, an output cavity, a rectangular
electron beam channel and a
drift tube, and is characterized in that the input cavity, the plurality of middle cavities and the output cavity are sequentially connected through the
drift tube; the input cavity, the middle cavity and the output cavity all adopt a double-staggered coupled cavity structure; on the basis, in the input cavity, the middle cavity and the output cavity, the resonant cavities are connected with the upper
coupling cavity and the lower
coupling cavity through the
isosceles trapezoid sub-
wavelength holes, and the long bottom edges of the
isosceles trapezoid sub-
wavelength holes and the wide edges of the resonant cavities are arranged in equal proportion, so that the
electric field energy is more gathered in an
electron beam channel, the
characteristic impedance is increased, and the interaction efficiency is improved; meanwhile, the quality factor is reduced, and
parasitic oscillation is avoided. Compared with an existing structure, the expansion interaction
klystron has obvious advantages in the aspects of high power, high
gain, high efficiency and wide bandwidth.