The invention relates to the technical field of
single crystal impurity detection, and particularly discloses a method for detecting superhigh-purity
germanium single crystal shallow-energy-level impurities. The method comprises the following steps: pretreating a
germanium single crystal sample, sequentially carrying out photoetching,
electron beam
evaporation, annealing treatment and
ohmic contact treatment to obtain a to-be-detected sample, putting the to-be-detected sample into a photothermal
ionization spectrometer to obtain a photothermal
ionization spectrum of the to-be-detected sample, comparing
spectral line positions and intensities of elements, and calculating the concentration of the to-be-detected sample according to the
spectral line positions and intensities of the elements. The
impurity types and the concentration of the ultra-high-purity
germanium single
crystal shallow-energy-level impurities are obtained. According to the method, the
metal indium film grows on the upper surface of the germanium single
crystal, and shallow-energy-level impurities of the germanium single
crystal can be detected in the photo-
thermal ionization spectrometer without adding a conductive substance to the lower surface of the germanium single crystal. Meanwhile, the germanium single crystal is subjected to acid
pickling treatment by utilizing an acid
pickling solution with high
nitric acid content, so that the germanium single crystal subjected to acid
pickling can be tightly combined with the
indium film evaporated by the
electron beam, and the prepared sample with the
indium film loaded on the upper surface has good
ohmic contact characteristics.