189 results about "Radiofrequency generator" patented technology

Embodiments of the disclosure include apparatus (e.g., plasma processing systems) and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a method for waveform generation, which generally includes delivering a radio frequency (RF) waveform at a frequency for a first period of time using a RF generator and then halting the delivery of the RF waveform for a second period of time, and delivering a pulsed voltage waveform at a first voltage for at least a portion of a third period of time using a pulser, wherein the delivery of the pulsed voltage waveform overlaps with the delivery of the RF waveform during a portion of the second period of time.

A system having the low frequency RF generator is described. The low frequency RF has an operating frequency range between 10 kilohertz (kHz) and 330 kHz. The low frequency RF generator generates an RF signal. The system further includes an impedance matching circuit coupled to the low frequency RF generator for receiving the RF signal. The impedance matching circuit modifies an impedance of the RF signal to output a modified RF signal. The system includes a plasma chamber coupled to the RF generator for receiving the modified RF signal. The plasma chamber includes a chuck having a dielectric layer and a base metal layer. The dielectric layer is located on top of the base metal layer. The dielectric layer has a bottom surface, and the base metal layer has a top surface. The base metal layer has a porous plug and the bottom surface of the dielectric layer has a portion that is in contact with the porous plug.

The invention relates to the technical field of radio frequency generator circuits, and provides a phase-locking frequency-stabilizing multi-core control radio frequency system, which processes I / Q signals and constructs a multi-core task allocation and cooperation mechanism through a digital baseband processing module, and performs pre-distortion processing and system scheduling. The double-closed-loop control module is used for stabilizing fundamental frequency, correcting temperature drift and compensating and adjusting frequency swing amplitude; the hybrid power amplification module is used for performing multi-stage hybrid power amplification signal processing and temperature monitoring through a driving stage and output stage combined topology; and the feedback sampling network module collects output signals in real time through a directional coupler and feeds back, adjusts and precisely controls the frequency stability according to the output signals.

The invention provides an intelligent vein closing system and a control method thereof, and belongs to the technical field of medical instruments.The intelligent vein closing system comprises a radio frequency generator host and a closing catheter, and the radio frequency generator host is used for generating and controlling output of radio frequency energy; the closed catheter comprises a handle, a catheter body and a heating working end which are connected in sequence, and the handle is detachably connected with the radio frequency generator host; wherein an infusion pump is integrated on the radio frequency generator host, and the infusion pump is used for infusing swelling liquid to a surgical site and is controlled by a control unit in the radio frequency generator host; a pressure sensor array is arranged outside the heating working end of the closed catheter and used for detecting the attaching pressure between the heating working end and the blood vessel wall in real time. The device is high in integration, and vein closing effectiveness, stability and treatment consistency are improved.

Methods, systems, and media for feedback control systems for impedance matching are described. A computer program product for an impedance matching and power distribution network is disclosed. The computer program product may comprise computer-executable instructions which may cause obtaining, at a present time, present values of variable reactances associated with a station of a process chamber, wherein the variable reactances are associated with a first feedback control system for performing impedance matching for the process chamber, and wherein frequency tuning is being performed on an RF generator of the process chamber in association with a second feedback control system for performing impedance matching for the process chamber. The instructions may cause determining updated values of the variable reactances for the station to be utilized in connection with the first feedback control system based at least in part on an error associated with the second feedback control system.

Embodiments of the present disclosure provide a system for fast impedance tuning. The system includes a radio frequency (RF) generator to generate power, a plasma chamber to receive the power from the RF generator and a RF matching network inserted between the RF generator and the plasma chamber configured to match a plasma load impedance to a RF generator impedance using a solid state based variable capacitor. The RF matching network includes a bias circuit that applies a reverse bias to the solid state based variable capacitor to control a capacitance value of the solid state based variable capacitor. The plasma load impedance is matched with the RF generator impedance when pulsed voltage, multi-level pulsing, or RF match ignition tuning is applied.

Some embodiments are directed to a method of processing a substrate in a plasma processing system. The method generally includes tuning a first capacitor and a second capacitor of a tuning circuit to match a first impedance corresponding to a first stage of a waveform, while a frequency of a radio frequency (RF) generator is preset to a first frequency; tuning a third capacitor of the tuning circuit and the frequency of the RF generator to match a second impedance corresponding to a second stage of the waveform, wherein the frequency of the RF generator is tuned to a second frequency; recording setting values of the first frequency and the second frequency that match different impedances at different stages of the waveform; and switching between the first frequency and the second frequency to match the different impedances at the different stages of the waveform.

A surgical hub is for use with a surgical instrument configured to deliver therapeutic energy to tissue at a surgical site of a surgical procedure. The surgical hub comprises: a hub enclosure, comprising a docking station including a docking port comprising data and power contacts; and a combo generator module removably retainable in the docking station. The combo generator module comprises: an ultrasonic energy generator component; a radio frequency (RF) energy generator component; a smoke evacuation component; and a connection port. At least one of the ultrasonic energy generator component and the radio frequency (RF) generator component are couplable to the surgical instrument through the connection port. The combo generator module further comprises at least one smoke evacuation component, configured to evacuate smoke generated by an application of therapeutic energy to the tissue by the surgical instrument.

Systems and methods for multi-level pulsing are described. The systems and methods include generating four or more states. During each of the four or more states, a radio frequency (RF) generator generates an RF signal. The RF signal has four or more power levels, and each of the four or more power levels corresponds to the four or more states. The multi-level pulsing facilitates a finer control in processing a substrate.

The invention provides a gain control method, a storage medium and a radio frequency generator, and the method is applied to the technical field of radio frequency, and comprises the steps: determining a target analog gain control parameter and a target digital gain control parameter according to a target power proportion in a radio frequency output instruction when the radio frequency output instruction is received; and performing digital domain gain modulation based on the target digital gain control parameter and a radio frequency signal parameter in the radio frequency output instruction to obtain a digital radio frequency waveform, converting the digital radio frequency waveform into an analog radio frequency waveform, and performing analog domain gain modulation on the analog radio frequency waveform based on the target analog gain control parameter to obtain a target radio frequency signal.

Embodiments of the present disclosure provide a system for fast impedance tuning. The system includes a radio frequency (RF) generator to generate power, a plasma chamber to receive the power from the RF generator and a RF matching network inserted between the RF generator and the plasma chamber configured to match a plasma load impedance to a RF generator impedance using a solid state based variable capacitor. The RF matching network includes a bias circuit that applies a reverse bias to the solid state based variable capacitor to control a capacitance value of the solid state based variable capacitor. The plasma load impedance is matched with the RF generator impedance when pulsed voltage, multi-level pulsing, or RF match ignition tuning is applied.

An electrosurgical unit configured to regulate a RF input signal applied to an electrosurgical device, the electrosurgical unit including a PWM circuit to produce a DC voltage responsive to a control signal; an RF waveform generator configured to generate an RF waveform based at least in part on the DC voltage; a transformer configured to transform the RF waveform to the RF input signal in a forward direction across the isolation barrier and transform a leakage current to a feedback current in a reverse direction across the isolation barrier; and a control circuit configured to generate the control signal based at least in part on the first input signal and the second input signal, the control signal controlling a pulse width modulation of the PWM circuit to produce the RF input signal.

The skin treatment device of the present invention comprises: a radio frequency (RF) generator for generating RF energy; an electrode for transmitting the RF energy to a skin tissue of a user; a measurement unit for measuring a forward RF voltage caused by the RF energy and a reverse RF voltage caused by the RF energy reflected to the RF generator; and a controller for calculating a skin impedance and an RF energy efficiency of the user based on the measured forward RF voltage and the reverse RF voltage, and controlling an output of the RF generator based on the calculated skin impedance and the RF energy efficiency.

A radiofrequency, RF, generator, in particular for a plasma application, including at least one cooling element having an upper surface and a lower surface; at least one DC power supply; at least one power stage to amplify an RF signal and connected to the upper surface of the at least one cooling element, wherein the power stage include one or more power amplifiers; a driver to supply the power amplifier of the at least one power stage and connected to the upper surface of the at least one cooling element; wherein the at least one DC power supply is connected by a busbar with the power amplifier and the driver, wherein a DC voltage Vbusbar is supplied to the power amplifier and the driver via the busbar; and wherein the busbar comprises a damping network including a plurality of capacitors connected between ground and the busbar and configured to shape transients on Vbusbar.

Systems and methods for synchronization of radio frequency (RF) generators are described. One of the methods includes receiving, by a first RF generator, a first recipe set, which includes information regarding a first plurality of pulse blocks for operating the first RF generator. The method further includes receiving, by a second RF generator, a second recipe set, which includes information regarding a second plurality of pulse blocks for operating a second RF generator. Upon receiving a digital pulsed signal, the method includes executing the first recipe set and executing the second recipe set. The method further includes outputting a first one of the pulse blocks of the first plurality based on the first recipe set in synchronization with a synchronization signal. The method includes outputting a first one of the pulse blocks of the second plurality based on the second recipe set in synchronization with the synchronization signal.

Surgical equipment including controllers, RF generators, and surgical devices for use with ablating tissue. More specifically, surgical equipment that includes a plurality of segmented electrode pairs operatively coupled to a controller, where the controller is configured to determine, based upon impedance calculations, for each of the segmented electrode pairs whether to power the segmented electrode pairs individually or power at least some of the segmented electrode pairs as a group.

1. The name of this design product: Radiofrequency trocar. 2. Purpose of the product with this design: Connect to a temperature-controlled radio frequency generator to perform radio frequency coagulation or stimulation on the patient's analgesic area through high-frequency current, loosen compressed nerve tissue and block the transmission of pain signals, so as to achieve the purpose of treating or relieving the patient's pain. 3. The key point of the design of this product lies in its shape. 4. The picture or photo that best illustrates the design points: Stereoscopic drawing 2. 5. As can be seen from the stereograms 1 and 2, the right view and bottom view are omitted.

The invention discloses an impedance matching network, an impedance matching control system and an impedance matching method. An impedance matching network for a plasma process is described. The impedance matching network includes an input port connectable to the radio frequency generator module. The impedance matching network includes an output port connectable to a load. The impedance matching network includes a transmission circuit, wherein the transmission circuit connects the output port to the input port. The transmission circuit includes a first transmission line and a second transmission line, where the first transmission line is electrically connected to the input port, and where the second transmission line is electrically connected to the output port. The impedance matching network includes a first impedance matching module, wherein the first impedance matching module is configured to connect at least one reactance to the transmission circuit. The impedance matching network comprises a coupling element through which the first transmission line and the second transmission line are coupled to each other, and wherein the coupling element provides an inductive coupling between the first transmission line and the second transmission line.

The present disclosure relates to a plasma generation system, particularly applicable to a system for semiconductor processing using plasma. The plasma generation system according to the present disclosure includes an arc suppression device coupled to an RF generator. The arc device includes a switch that is engaged based on a trigger signal. Additionally, the arc device includes a power dissipator that is engaged by the set of switches to dissipate stored and delivered energy when the set of switches is engaged. The arc suppression device further includes an impedance transformer coupled to the power dissipator to perform impedance transformation, which reduces the reflection coefficient at the input end of the device when the switch is engaged with the power dissipator. The plasma generation system also includes a matching network coupled to the radio frequency generator and a plasma chamber coupled to the matching network.

A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; a source RF generator coupled to the plasma processing chamber, and configured to generate a pulse source RF signal including a plurality of source cycles; and a bias RF generator coupled to the substrate support, and configured to generate a pulse bias RF signal. A transition timing to the bias operating state in each bias cycle is delayed with respect to a transition timing to the source operating state in a corresponding source cycle, the source non-operating period overlaps with the bias non-operating period, and the bias operating period in each bias cycle overlaps with the source operating period in the next source cycle.

The utility model discloses a radio frequency generator, and relates to the technical field of radio frequency. Comprising a generator shell, a front baffle is installed on one side of the generator shell, a rear cover plate is fixedly connected to the side, opposite to the front baffle, of the generator shell, a water cooling plate is jointly and fixedly connected between the front baffle and the rear cover plate, and two symmetrically-distributed water connectors are arranged on the surface of the rear cover plate. As the basis of a direct current part and a radio frequency part of the radio frequency generator, the water-cooling pipe is arranged in the water-cooling plate and is communicated with the outside through the water joints, and cooling water is injected into the water-cooling plate through one water joint in the operation process of the radio frequency generator, so that the water-cooling plate is cooled. And the cooling water absorbing heat flows out from the other water joint, so that the working environment in the radio frequency generator is kept at a relatively stable working temperature, and the service life of precise components in the radio frequency generator is prolonged.

An impedance matching network for plasma processes includes an input port being connectable to a radio frequency (RF) generator circuit, an output port being connectable to a load, and a transmission circuit. The transmission circuit connects the output port to the input port. The transmission circuit includes a first transmission line and a second transmission line, wherein the first transmission line is electrically connected to the input port, and wherein the second transmission line is electrically connected to the output port. The impedance matching network further includes a first impedance matching circuit configured to connect at least one reactance to the transmission circuit. The impedance matching network further includes a coupling element, wherein the first transmission line and the second transmission line are coupled to each other by the coupling element, and wherein the coupling element provides an inductive coupling between the first transmission line and the second transmission line.

A method and apparatus for processing a substrate are provided. For example, a matching network comprises a first sensor operably connected to the input of the matching network and an RF generator capable of operating at a first frequency, and a second sensor operably connected to the output of the matching network and a plasma processing chamber. The first and second sensors are configured to measure impedance during the pulse-on time of the RF generator. A variable capacitor is connected to the first and second sensors. A controller is configured to adjust at least one variable capacitor of the matching network during the pulse-on time of the RF generator based on an impedance value measured during at least one of the pulse-on or pulse-off states of a pulse voltage waveform generator connected to the matching network, or an RF signal from another RF generator capable of operating at a second frequency different from the first frequency.

According to an aspect. there is provided an electric shaver (100, 900, 1000, 1100, 1400, 1600) that comprises: a skin-contacting area (200, 910, 1110, 1410, 1610) arranged to contact skin of a user during use of the shaver (100, 900, 1000, 1100, 1400, 1600); at least two hair-cutting units (150, 160, 170, 1480, 1680) arranged in the skin-contacting area (200, 910, 1110, 1410, 1610) and each having an external cutting member (152, 162, 172, 1482, 1682) with a plurality of hair-entry openings and an internal cutting member covered by and moveable relative to the external cutting member (152, 162, 172, 1482, 1682); N electrodes (180a-d) arranged in the skin-contacting area (200, 910, 1110, 1410, 1610) to contact the skin during use, wherein N is at least 3; a radio-frequency (RF) generator (320) configured to generate RF energy having a basic frequency fRF and a basic period TRF=1 / fRF; an RF energy modulator (310) configured to transform the RF energy generated by the RF generator into N periodic amplitude-modulated RF energy signals and to provide each of the N periodic amplitude-modulated RF energy signals (SI, S2, S3) to a respective one of the N electrodes (180a-d); wherein: seen perpendicularly to the skin-contacting area (200, 910, 1110, 1410, 1610), the external cutting member (152, 162, 172, 1482, 1682) of each hair-cutting unit (150, 160, 170, 1480, 1680) has a geometric center point (156, 166, 176, 1486, 1686), a first pitch distance (202) being a distance between the geometric center points (156, 166, 176, 1486, 1686) of a pair of the hair-cutting units (150, 160, 170, 1480, 1680), and a first minimum pitch distance being a minimum of the first pitch distances of all pairs of the hair-cutting units (150, 160, 170, 1480, 1680); seen perpendicular to the skin-contacting area (200, 910, 1110, 1410, 1610), each of the N electrodes (180a-d) has a geometric center point (182a-c), a second pitch distance (204) being a distance between the geometric center points (182a-c) of a pair of the N electrodes (180a-d), and a second minimum pitch distance being a minimum of the second pitch distances (204) of all pairs of the N electrodes (180a-d); a ratio between the second minimum pitch distance and the first minimum pitch distance is at least 0.8; a basic period TMOD of the N periodic amplitude-modulated RF energy signals (S1, S2, S3) is larger than the basic period TRF; and an nth of the N periodic amplitude-modulated RF energy signals (S1, S2, S3) has a phase difference of TMOD*(U−1) / N relative to a first of the N periodic amplitude-modulated RF energy signals (S1, S2, S3), wherein 2≤n≤N.

A plasma etching device includes: a dual radio frequency (RF) generator configured to generate a second power signal having a second frequency and a first power signal having a first frequency, which is at least 12 MHz higher than the second frequency, a match circuit configured to perform impedance matching based on an impedance of the dual RF generator, a chamber including a wafer support, and an antenna inductively couplable to an interior of the chamber by an inner coil configured to receive the first power signal, and an outer coil configured to receive the second power signal.

The utility model belongs to the technical field of fruit and vegetable processing equipment, and provides a fruit and vegetable juice radio frequency sterilization device, which comprises a radio frequency generator, an output terminal and a power supply, a cathode plate, an anode plate and a feed liquid pipeline are arranged in the radio frequency sterilization box, and the feed liquid pipeline is located between the cathode plate and the anode plate; wherein the radio frequency sterilization box is further provided with an input terminal electrically connected with the cathode plate and the anode plate, and the input terminal is detachably connected with the output terminal. The radio frequency sterilization device for the fruit and vegetable juice can efficiently and quickly sterilize the fruit and vegetable juice, is good in sterilization effect, can retain the original flavor and nutritional ingredients of the fruit and vegetable juice to the maximum extent, is convenient and quick to use, effectively reduces occupation of use space and transportation space due to the detachable modular design, and is wide in application range.

The application discloses a structure for improving plasma stability, which comprises a radio frequency generator, a matcher, a discharge adjusting resistor and a plasma load structure. The output end of the radio frequency generator is connected with the input end of the matcher, the output end of the matcher is connected with the first end of the discharge adjusting resistor, and the second end of the discharge adjusting resistor is connected with the plasma load structure. The discharge adjusting resistor is used for providing a discharge adjusting voltage which is proportional to the discharge current when the discharge current is generated in the plasma load structure, so that the discharge voltage on the plasma load structure is reduced, and thus the plasma stability is improved. The application also discloses a method for improving plasma stability. The application can control the discharge voltage of the plasma, so that the plasma discharge is stable, the probability of arc generation is reduced, and thus the product process can be improved and the production capacity can be improved.

This disclosure discloses a Class E amplifier symmetrical amplifier topology circuit for an RF generator and relates to the field of RF power amplifiers to address the problems of low efficiency and poor stability of current symmetrical amplifier topology circuits for RF generators. In the Class E amplifier symmetrical amplifier topology circuit, one input of the first power divider is connected to an output of a power supply; one output of the first power divider is sequentially connected in series with the 90-degree phase shifter, the second power divider, the first Class E matching network, and the first power combiner; the other output of the first power divider is sequentially connected in series with the third power divider, the second Class E matching network, and the second power combiner.The outputs of the first and second power combiners are each connected to a coupling terminal and an input terminal of the quadrature coupler; a co-source terminal of the quadrature coupler is connected to a load; the first Class E matching circuit and the second Class E matching circuit each have N Class E reference matching circuits; the Class E reference matching circuit has an input matching circuit, a Class E RF power amplifier, and an output matching circuit connected in series.

This invention discloses a hydrogen isotope permeation research device based on radio frequency plasma, belonging to the field of hydrogen isotope permeation research technology. The device includes a quartz tube, one end of which is connected to an inlet unit, and the other end has a fixed flange with a gas venting channel. A permeation tube is detachably and sealed to the fixed flange, and the inner cavity of the permeation tube is connected to a permeation flux detection unit. A tubular furnace corresponding to the permeation tube and a coupling coil electrically connected to a radio frequency generator are fitted around the quartz tube. The device also includes an in-situ reverse cleaning unit that can replace the permeation flux detection unit and a plasma diagnostic unit that can replace the permeation tube. This invention uses a radio frequency plasma source, which has high plasma density and a wide parameter adjustment range, effectively processing combined hydrogen isotopes. The in-situ reverse cleaning unit improves the permeation flux and operational stability. The modular structure provides strong engineering scalability and can support the systematic research and engineering development of ultrapermeation pumps.

A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; a source RF generator configured to generate a source RF signal to generate a plasma, and a bias RF generator coupled to the substrate support and configured to generate a bias RF signal. The source RF signal having a first source power level during a first period, a second source power level during a second period, a third source power level during a third period, a zero power level during a fourth period, a zero power level during a fifth period. The bias RF signal having a first bias power level during the first period, a second bias power level during the second period, a third bias power level during the third period, a zero power level during the fourth period, a fourth bias power level during the fifth period.