123 results about "Radiofrequency generator" patented technology

The invention relates to the technical field of radio frequency generator circuits, and provides a phase-locking frequency-stabilizing multi-core control radio frequency system, which processes I / Q signals and constructs a multi-core task allocation and cooperation mechanism through a digital baseband processing module, and performs pre-distortion processing and system scheduling. The double-closed-loop control module is used for stabilizing fundamental frequency, correcting temperature drift and compensating and adjusting frequency swing amplitude; the hybrid power amplification module is used for performing multi-stage hybrid power amplification signal processing and temperature monitoring through a driving stage and output stage combined topology; and the feedback sampling network module collects output signals in real time through a directional coupler and feeds back, adjusts and precisely controls the frequency stability according to the output signals.

The invention provides an intelligent vein closing system and a control method thereof, and belongs to the technical field of medical instruments.The intelligent vein closing system comprises a radio frequency generator host and a closing catheter, and the radio frequency generator host is used for generating and controlling output of radio frequency energy; the closed catheter comprises a handle, a catheter body and a heating working end which are connected in sequence, and the handle is detachably connected with the radio frequency generator host; wherein an infusion pump is integrated on the radio frequency generator host, and the infusion pump is used for infusing swelling liquid to a surgical site and is controlled by a control unit in the radio frequency generator host; a pressure sensor array is arranged outside the heating working end of the closed catheter and used for detecting the attaching pressure between the heating working end and the blood vessel wall in real time. The device is high in integration, and vein closing effectiveness, stability and treatment consistency are improved.

Embodiments of the present disclosure provide a system for fast impedance tuning. The system includes a radio frequency (RF) generator to generate power, a plasma chamber to receive the power from the RF generator and a RF matching network inserted between the RF generator and the plasma chamber configured to match a plasma load impedance to a RF generator impedance using a solid state based variable capacitor. The RF matching network includes a bias circuit that applies a reverse bias to the solid state based variable capacitor to control a capacitance value of the solid state based variable capacitor. The plasma load impedance is matched with the RF generator impedance when pulsed voltage, multi-level pulsing, or RF match ignition tuning is applied.

Some embodiments are directed to a method of processing a substrate in a plasma processing system. The method generally includes tuning a first capacitor and a second capacitor of a tuning circuit to match a first impedance corresponding to a first stage of a waveform, while a frequency of a radio frequency (RF) generator is preset to a first frequency; tuning a third capacitor of the tuning circuit and the frequency of the RF generator to match a second impedance corresponding to a second stage of the waveform, wherein the frequency of the RF generator is tuned to a second frequency; recording setting values of the first frequency and the second frequency that match different impedances at different stages of the waveform; and switching between the first frequency and the second frequency to match the different impedances at the different stages of the waveform.

Embodiments of the present disclosure provide a system for fast impedance tuning. The system includes a radio frequency (RF) generator to generate power, a plasma chamber to receive the power from the RF generator and a RF matching network inserted between the RF generator and the plasma chamber configured to match a plasma load impedance to a RF generator impedance using a solid state based variable capacitor. The RF matching network includes a bias circuit that applies a reverse bias to the solid state based variable capacitor to control a capacitance value of the solid state based variable capacitor. The plasma load impedance is matched with the RF generator impedance when pulsed voltage, multi-level pulsing, or RF match ignition tuning is applied.

An electrosurgical unit configured to regulate a RF input signal applied to an electrosurgical device, the electrosurgical unit including a PWM circuit to produce a DC voltage responsive to a control signal; an RF waveform generator configured to generate an RF waveform based at least in part on the DC voltage; a transformer configured to transform the RF waveform to the RF input signal in a forward direction across the isolation barrier and transform a leakage current to a feedback current in a reverse direction across the isolation barrier; and a control circuit configured to generate the control signal based at least in part on the first input signal and the second input signal, the control signal controlling a pulse width modulation of the PWM circuit to produce the RF input signal.

The skin treatment device of the present invention comprises: a radio frequency (RF) generator for generating RF energy; an electrode for transmitting the RF energy to a skin tissue of a user; a measurement unit for measuring a forward RF voltage caused by the RF energy and a reverse RF voltage caused by the RF energy reflected to the RF generator; and a controller for calculating a skin impedance and an RF energy efficiency of the user based on the measured forward RF voltage and the reverse RF voltage, and controlling an output of the RF generator based on the calculated skin impedance and the RF energy efficiency.

A radiofrequency, RF, generator, in particular for a plasma application, including at least one cooling element having an upper surface and a lower surface; at least one DC power supply; at least one power stage to amplify an RF signal and connected to the upper surface of the at least one cooling element, wherein the power stage include one or more power amplifiers; a driver to supply the power amplifier of the at least one power stage and connected to the upper surface of the at least one cooling element; wherein the at least one DC power supply is connected by a busbar with the power amplifier and the driver, wherein a DC voltage Vbusbar is supplied to the power amplifier and the driver via the busbar; and wherein the busbar comprises a damping network including a plurality of capacitors connected between ground and the busbar and configured to shape transients on Vbusbar.

Systems and methods for synchronization of radio frequency (RF) generators are described. One of the methods includes receiving, by a first RF generator, a first recipe set, which includes information regarding a first plurality of pulse blocks for operating the first RF generator. The method further includes receiving, by a second RF generator, a second recipe set, which includes information regarding a second plurality of pulse blocks for operating a second RF generator. Upon receiving a digital pulsed signal, the method includes executing the first recipe set and executing the second recipe set. The method further includes outputting a first one of the pulse blocks of the first plurality based on the first recipe set in synchronization with a synchronization signal. The method includes outputting a first one of the pulse blocks of the second plurality based on the second recipe set in synchronization with the synchronization signal.

The invention discloses an impedance matching network, an impedance matching control system and an impedance matching method. An impedance matching network for a plasma process is described. The impedance matching network includes an input port connectable to the radio frequency generator module. The impedance matching network includes an output port connectable to a load. The impedance matching network includes a transmission circuit, wherein the transmission circuit connects the output port to the input port. The transmission circuit includes a first transmission line and a second transmission line, where the first transmission line is electrically connected to the input port, and where the second transmission line is electrically connected to the output port. The impedance matching network includes a first impedance matching module, wherein the first impedance matching module is configured to connect at least one reactance to the transmission circuit. The impedance matching network comprises a coupling element through which the first transmission line and the second transmission line are coupled to each other, and wherein the coupling element provides an inductive coupling between the first transmission line and the second transmission line.

An impedance matching network for plasma processes includes an input port being connectable to a radio frequency (RF) generator circuit, an output port being connectable to a load, and a transmission circuit. The transmission circuit connects the output port to the input port. The transmission circuit includes a first transmission line and a second transmission line, wherein the first transmission line is electrically connected to the input port, and wherein the second transmission line is electrically connected to the output port. The impedance matching network further includes a first impedance matching circuit configured to connect at least one reactance to the transmission circuit. The impedance matching network further includes a coupling element, wherein the first transmission line and the second transmission line are coupled to each other by the coupling element, and wherein the coupling element provides an inductive coupling between the first transmission line and the second transmission line.

A method and apparatus for processing a substrate are provided. For example, a matching network comprises a first sensor operably connected to the input of the matching network and an RF generator capable of operating at a first frequency, and a second sensor operably connected to the output of the matching network and a plasma processing chamber. The first and second sensors are configured to measure impedance during the pulse-on time of the RF generator. A variable capacitor is connected to the first and second sensors. A controller is configured to adjust at least one variable capacitor of the matching network during the pulse-on time of the RF generator based on an impedance value measured during at least one of the pulse-on or pulse-off states of a pulse voltage waveform generator connected to the matching network, or an RF signal from another RF generator capable of operating at a second frequency different from the first frequency.

According to an aspect. there is provided an electric shaver (100, 900, 1000, 1100, 1400, 1600) that comprises: a skin-contacting area (200, 910, 1110, 1410, 1610) arranged to contact skin of a user during use of the shaver (100, 900, 1000, 1100, 1400, 1600); at least two hair-cutting units (150, 160, 170, 1480, 1680) arranged in the skin-contacting area (200, 910, 1110, 1410, 1610) and each having an external cutting member (152, 162, 172, 1482, 1682) with a plurality of hair-entry openings and an internal cutting member covered by and moveable relative to the external cutting member (152, 162, 172, 1482, 1682); N electrodes (180a-d) arranged in the skin-contacting area (200, 910, 1110, 1410, 1610) to contact the skin during use, wherein N is at least 3; a radio-frequency (RF) generator (320) configured to generate RF energy having a basic frequency fRF and a basic period TRF=1 / fRF; an RF energy modulator (310) configured to transform the RF energy generated by the RF generator into N periodic amplitude-modulated RF energy signals and to provide each of the N periodic amplitude-modulated RF energy signals (SI, S2, S3) to a respective one of the N electrodes (180a-d); wherein: seen perpendicularly to the skin-contacting area (200, 910, 1110, 1410, 1610), the external cutting member (152, 162, 172, 1482, 1682) of each hair-cutting unit (150, 160, 170, 1480, 1680) has a geometric center point (156, 166, 176, 1486, 1686), a first pitch distance (202) being a distance between the geometric center points (156, 166, 176, 1486, 1686) of a pair of the hair-cutting units (150, 160, 170, 1480, 1680), and a first minimum pitch distance being a minimum of the first pitch distances of all pairs of the hair-cutting units (150, 160, 170, 1480, 1680); seen perpendicular to the skin-contacting area (200, 910, 1110, 1410, 1610), each of the N electrodes (180a-d) has a geometric center point (182a-c), a second pitch distance (204) being a distance between the geometric center points (182a-c) of a pair of the N electrodes (180a-d), and a second minimum pitch distance being a minimum of the second pitch distances (204) of all pairs of the N electrodes (180a-d); a ratio between the second minimum pitch distance and the first minimum pitch distance is at least 0.8; a basic period TMOD of the N periodic amplitude-modulated RF energy signals (S1, S2, S3) is larger than the basic period TRF; and an nth of the N periodic amplitude-modulated RF energy signals (S1, S2, S3) has a phase difference of TMOD*(U−1) / N relative to a first of the N periodic amplitude-modulated RF energy signals (S1, S2, S3), wherein 2≤n≤N.

The application discloses a structure for improving plasma stability, which comprises a radio frequency generator, a matcher, a discharge adjusting resistor and a plasma load structure. The output end of the radio frequency generator is connected with the input end of the matcher, the output end of the matcher is connected with the first end of the discharge adjusting resistor, and the second end of the discharge adjusting resistor is connected with the plasma load structure. The discharge adjusting resistor is used for providing a discharge adjusting voltage which is proportional to the discharge current when the discharge current is generated in the plasma load structure, so that the discharge voltage on the plasma load structure is reduced, and thus the plasma stability is improved. The application also discloses a method for improving plasma stability. The application can control the discharge voltage of the plasma, so that the plasma discharge is stable, the probability of arc generation is reduced, and thus the product process can be improved and the production capacity can be improved.

This disclosure discloses a Class E amplifier symmetrical amplifier topology circuit for an RF generator and relates to the field of RF power amplifiers to address the problems of low efficiency and poor stability of current symmetrical amplifier topology circuits for RF generators. In the Class E amplifier symmetrical amplifier topology circuit, one input of the first power divider is connected to an output of a power supply; one output of the first power divider is sequentially connected in series with the 90-degree phase shifter, the second power divider, the first Class E matching network, and the first power combiner; the other output of the first power divider is sequentially connected in series with the third power divider, the second Class E matching network, and the second power combiner.The outputs of the first and second power combiners are each connected to a coupling terminal and an input terminal of the quadrature coupler; a co-source terminal of the quadrature coupler is connected to a load; the first Class E matching circuit and the second Class E matching circuit each have N Class E reference matching circuits; the Class E reference matching circuit has an input matching circuit, a Class E RF power amplifier, and an output matching circuit connected in series.

This invention discloses a hydrogen isotope permeation research device based on radio frequency plasma, belonging to the field of hydrogen isotope permeation research technology. The device includes a quartz tube, one end of which is connected to an inlet unit, and the other end has a fixed flange with a gas venting channel. A permeation tube is detachably and sealed to the fixed flange, and the inner cavity of the permeation tube is connected to a permeation flux detection unit. A tubular furnace corresponding to the permeation tube and a coupling coil electrically connected to a radio frequency generator are fitted around the quartz tube. The device also includes an in-situ reverse cleaning unit that can replace the permeation flux detection unit and a plasma diagnostic unit that can replace the permeation tube. This invention uses a radio frequency plasma source, which has high plasma density and a wide parameter adjustment range, effectively processing combined hydrogen isotopes. The in-situ reverse cleaning unit improves the permeation flux and operational stability. The modular structure provides strong engineering scalability and can support the systematic research and engineering development of ultrapermeation pumps.

A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; a source RF generator configured to generate a source RF signal to generate a plasma, and a bias RF generator coupled to the substrate support and configured to generate a bias RF signal. The source RF signal having a first source power level during a first period, a second source power level during a second period, a third source power level during a third period, a zero power level during a fourth period, a zero power level during a fifth period. The bias RF signal having a first bias power level during the first period, a second bias power level during the second period, a third bias power level during the third period, a zero power level during the fourth period, a fourth bias power level during the fifth period.

Systems and methods for controlling a processing rate at an edge region of a plasma chamber are described. One of the systems includes a first radio frequency (RF) generator that generates a first RF signal. A first matching circuit outputs a first modified RF signal upon receiving the first RF signal. The system includes a plasma chamber having a substrate support and an upper electrode extension. The first impedance matching circuit provides the first modified RF signal to the substrate support. The upper electrode is coupled to a ground potential or to a floating potential. The system includes a second RF generator that generates a second RF signal. A second impedance matching circuit outputs a second modified RF signal upon receiving the second RF signal. The second impedance matching circuit provides the second modified RF signal to the upper electrode extension.

Devices, systems, and methods are claimed for the treatment of premature ejaculation using neuromodulation, e.g., via radio frequency (RF) or ultrasound (US) energy to disrupt neural function at the dorsal penile nerves or pelvic floor. In one embodiment, a device for the non-invasive prevention or treatment of premature ejaculation is disclosed, the device being applicable externally to a penis of an individual, the device comprising: at least one radiofrequency (RF) generator configured to generate RF energy; at least one RF electrode suitable for placement on a target penile surface of the penis proximate to at least one dorsal penile nerve; and at least one control circuit connected to the RF generator, wherein the at least one control circuit is operable to cause the RF energy to selectively affect the at least one dorsal penile nerve to prolong ejaculation time.

Method for verifying a power consumption of an RF generator for controlling at least one electrosurgical instrument, wherein the RF generator has an inverter for generating an RF signal, and the inverter is supplied with electrical current via an inverter input and outputs an RF signal with a voltage and a current value for controlling an electrosurgical instrument via an inverter output, comprising the steps of recording an output power emitted via the RF signal by directly measuring the RF signal by means of an RF power recording device as a directly recorded output power, recording a comparison power based on a power measured on the input side of the inverter and verifying the functionality of the RF power recording device by comparing the recorded comparison power with the directly recorded output power.

This application discloses an etching apparatus for an MRAM memory, comprising: an ion source, a neutralizer, and a stage. The neutralizer is disposed at the exit port of the ion source, and the stage is disposed on one side of the ion source for receiving plasma emitted from the ion source. The stage includes a pressure ring and at least one electrode on its incident surface. Both the pressure ring and the at least one electrode are disposed at the edge of the stage, and the at least one electrode is embedded inside or around the pressure ring. The at least one electrode is connected to a radio frequency generator via a wire. By adjusting the stage angle within the IBE etching chamber, etching of the MRAM memory cell and sidewall cleaning can be completed within the same chamber, facilitating multiple switching operations. By embedding at least one electrode at the edge of the stage and applying power control to each electrode, the plasma distribution on the stage can be adjusted in zones, improving etching uniformity.

The invention provides metal gate high dielectric constant layer material DPN equipment and process, the equipment comprises a cavity and a resonance coil arranged on the cavity, the cavity is provided with an air inlet, the resonance coil is connected with an RF radio frequency generator, and the RF radio frequency generator outputs radio frequency power with duty ratio. Nitrogen atoms can be prevented from penetrating through the high-dielectric-constant layer to enter the lower-layer device area as much as possible.

The present invention provides a substrate processing apparatus capable of independently controlling plasma density and ion collision energy. To this end, a substrate processing apparatus, according to one embodiment of the present invention, may comprise: a chamber providing a reaction space in which a substrate is processed; a first electrode disposed inside the chamber; a second electrode provided inside the chamber and arranged to face the first electrode; a first RF generator connected to the first electrode; a second RF generator connected to the second electrode; and an electrode plate disposed between the first electrode and the second electrode.

A system for pulsing a top low frequency (LF) radio frequency (RF) generator is described. The system includes a main LF RF generator that generates a first RF signal and is coupled to a lower electrode of a plasma chamber. The top LF RF generator generates a second RF signal and is coupled to a top electrode of the plasma chamber. The system includes a waveform controller coupled to the main LF RF generator and the top LF RF generator. The waveform controller receives a pulse repetition rate and a first duty cycle of the first RF signal, controls the top LF RF generator to apply the pulse repetition rate to the second RF signal, and controls the top LF RF generator to have a second duty cycle that is greater than the first duty cycle.

A substrate processing system includes a vacuum transfer module and a plurality of process modules defining respective processing chambers. The plurality of process modules includes a first row of the process modules arranged on a first side of the vacuum transfer module and a second row of the process modules arranged on a second side of the vacuum transfer module opposite the first side. Each of the plurality of process modules includes a gas box arranged above the process module and configured to selectively supply at least one gas and / or gas mixture into the processing chamber of the process module and a radio frequency (RF) generator configured to generate RF power to create plasma within the processing chamber. The RF generator is arranged above the process module and the gas box and the RF generator are arranged side-by-side above the process module.

A wireless power system includes a magnetic resonance wireless power supply with a plurality of coupled LC resonators, each LC resonator being driven by a separate radio frequency (RF) generator. The system is modular, allowing the resonator to be added, removed, or repositioned. Each RF generator is configured to sense the phases of the other RF generators and adjust their phases to maintain a constant phase difference. Each RF generator includes a class E amplifier driven by an injection locked oscillator and a low pass filter that outputs a current sine wave. The RF generator senses the phase of the RF current of the other RF generators through the induced voltage and adjusts its phase based on a sum voltage derived from the voltage signal and the current signal. The system maintains frequency locking by adjusting a variable capacitor in the presence of environmental detuning.

The utility model discloses an auxiliary device for groove-type concentrating photovoltaic sun-alignment accurate orientation, which belongs to the technical field of photovoltaic power generation and comprises photosensitive battery components fixed at two ends of a secondary concentrating receiver. Each photosensitive battery assembly comprises a first photosensitive battery, a second photosensitive battery, a power supply battery and a radio frequency generator. The radio frequency generator comprises an amplifier, a first comparator, a second comparator and a transmitting module; the positive electrode of the first photosensitive battery and the negative electrode of the second photosensitive battery are connected with one input terminal of the amplifier. The negative electrode of the first photosensitive battery and the positive electrode of the second photosensitive battery are connected with the other input terminal of the amplifier. The output terminal of the amplifier is respectively connected with the positive terminal of the first comparator and the negative terminal of the second comparator; the output terminal of the first comparator and the output terminal of the second comparator are connected with the function terminal of the transmitting module; the power supply battery is connected with a power supply terminal of the transmitting module; the transmitting module is in wireless communication with a rotating mechanism of the photovoltaic support.

The invention discloses a radio frequency assisted freezing system which comprises a radio frequency generation module, a radio frequency processing module, a low-temperature freezing module and an optical fiber temperature measurement module, the radio frequency generation module can provide stable pulse radio frequency signals and comprises a radio frequency generator, a relay pulse generator and an impedance matcher, and the relay pulse generator and the impedance matcher are electrically connected with the radio frequency generator. The radio frequency processing module is used for providing a radio frequency action space for food and comprises a radio frequency processing device, the low-temperature freezing module can provide freezing cooling capacity for the system and comprises a low-temperature refrigerator, the impedance matcher and the radio frequency processing device are arranged in the low-temperature refrigerator, and the optical fiber temperature measuring module is arranged on the outer side of the low-temperature refrigerator; and the optical fiber temperature measurement module is used for accurately monitoring the food temperature. Through the synergistic effect of the radio frequency field and low-temperature freezing, the crystallization process of water molecules in the food can be effectively interfered, the food is promoted to generate an obvious supercooling phenomenon, a large number of ice nucleuses are formed at the temperature lower than the freezing point in an explosive mode finally, and the final quality of the frozen food is greatly improved.

A radio frequency ablation device (300) comprising a balloon blocking catheter. The radio frequency ablation device (300) comprises a double or multi-lumen balloon blocking catheter (310) and a radio frequency ablation catheter (320). a stent (321) is arranged at the far end of the radio frequency ablation catheter (320). Two or more electrodes (322, 325, 326) are arranged on the stent (321), and are connected to a radio frequency generator respectively by means of the corresponding guide wires arranged in the radio frequency ablation catheter (320). When the radio frequency ablation device (300) is used for ablating blood vessel peripheral nerves, inflating a blocking balloon (311) arranged at the far end of the guide catheter (310) to block local blood flow in a blood vessel. The invention has ideal nerve ablation effect.