21 results about "Floating potential" patented technology

A semiconductor device according to the present disclosure includes a dummy active trench including an upper electrode and a lower electrode. The upper electrode is connected to the gate electrode or to the emitter electrode, or at a floating potential. The lower electrode is connected to the gate electrode or to the emitter electrode, or at a floating potential. The dummy active trench includes an upper insulating film formed on a side surface of the upper electrode, a lower insulating film formed on a side surface of the lower electrode, and a boundary insulating film formed between the upper electrode and the lower electrode. The thickness of the upper insulating film in a right-left direction is larger than the thickness of the lower insulating film in the right-left direction. In a sectional view, the area of the upper electrode is smaller than the area of the lower electrode.

An input / output device includes a first sensor electrode and a second sensor electrode. In addition, the input / output device includes a first electrode and a second electrode which are electrodes for a display element, and a substrate sandwiched between the first sensor electrode and the second sensor electrode. The second sensor electrode is formed concurrently with the first electrode using the same material. The input / output device sensors a change in capacitance of a capacitor formed between the first sensor electrode and the second sensor electrode. Furthermore, a third sensor electrode to which a floating potential is applied may be provided to overlap with the first electrode. In the input / output device, either a liquid crystal element or a light-emitting element may be used, or both the liquid crystal element and the light-emitting element may be used.

Plasma Jet Device The invention relates to a cold plasma jet device (1) comprising: - at least one gas supply inlet (2); - at least one tube (4) fluidically connected to the gas supply inlet and comprising at least one plasma outlet (5), the gas supply inlet and the plasma outlet defining a direction of gas and plasma flow; - at least one high-voltage electrode (6) outside the tube configured to generate an electric field in the tube; and - at least one electrically conductive element (7) having a floating electrical potential and extending axially inside the tube at least partially between the high-voltage electrode and the plasma outlet. Figure for the abstract: Fig. 3

Systems and methods for controlling a processing rate at an edge region of a plasma chamber are described. One of the systems includes a first radio frequency (RF) generator that generates a first RF signal. A first matching circuit outputs a first modified RF signal upon receiving the first RF signal. The system includes a plasma chamber having a substrate support and an upper electrode extension. The first impedance matching circuit provides the first modified RF signal to the substrate support. The upper electrode is coupled to a ground potential or to a floating potential. The system includes a second RF generator that generates a second RF signal. A second impedance matching circuit outputs a second modified RF signal upon receiving the second RF signal. The second impedance matching circuit provides the second modified RF signal to the upper electrode extension.

The application belongs to the technical field of high-voltage power supply sampling monitoring, and provides an ultrahigh-voltage electron gun power supply photoelectric isolation sampling circuit and a sampling method. In view of the problems of low sampling accuracy, poor surge resistance and difficult maintenance of the existing electron gun power supply under a 150kV floating high-voltage environment, the application adopts three groups of signal processing and isolation channels with the same structure, which correspond to the output of the main high-voltage, the auxiliary high-voltage and the filament in a floating cascade structure. Each channel independently completes sampling and isolation under the corresponding floating potential. The circuit includes a power supply circuit, a sampling connection circuit, a current and voltage sampling base plate with an integrated multi-stage overvoltage clamping network, and a detachable and plug-in sampling processing circuit board, a photoelectric conversion circuit board and an optocoupler signal transmission plugboard. Through photoelectric isolation and modular design, the circuit effectively suppresses the spark surge interference, realizes high-precision and high-reliability sampling, supports plug-and-play, and significantly improves the system maintenance convenience and operation stability.

The invention relates to a housing-grounded high-voltage circuit breaker (1) having a housing (2) and at least one bushing (3) on the housing (2) for an electrical conductor (4) and at least one electrode (5) for shielding the electrical conductor (4) from the housing (2). The at least one electrode (5) is at a floating potential and is configured to measure a voltage on a high-voltage connection of the housing-grounded high-voltage circuit breaker (1). The invention further relates to a method for measuring a voltage using the electrode (5).

The aim is to provide a technology that can improve the insulation reliability of a semiconductor device. The semiconductor device includes a terminal well region surrounding an active region when viewed from above, and an FLR region surrounding the terminal well region when viewed from above. The FLR region includes multiple floating wells with floating potentials that surround the terminal well region when viewed from above and are arranged in a nested manner, each having a floating potential. The number of floating wells is VR / 100 or more relative to the rated voltage VR[V] of the semiconductor device.

This invention discloses a high-voltage capacitor isolator and its manufacturing method, belonging to the field of microelectronic device technology. The manufacturing method of the high-voltage capacitor isolator includes growing a lower electrode on a substrate surface and depositing a first dielectric layer on top of the lower electrode; depositing a second metal layer on the first dielectric layer and etching the second metal layer to form a floating conductor ring; sequentially depositing a second dielectric layer and a third metal layer on the floating conductor ring and etching the third metal layer to form an upper electrode. The floating conductor ring has a freely floating potential, and its projection on the substrate at least partially overlaps with the projection of the upper or lower electrode on the substrate, thus counteracting the electric field divergence at the electrode edge; a passivation layer and a protective layer are sequentially formed on top of the upper electrode. By inserting a freely floating conductor ring between the electrodes inside the capacitor, the electric field divergence at the original electrode edge is counteracted, thereby optimizing the edge electric field distribution and improving the premature failure point problem.

The invention provides a semiconductor process cavity and semiconductor process equipment, and relates to the technical field of semiconductor preparation, and the semiconductor process cavity comprises a cavity body; the inner lining assembly is arranged in the cavity body, the inner lining assembly and the cavity body are connected through at least two first insulating parts, and the at least two first insulating parts are distributed in the circumferential direction of the cavity body in a scattered mode. The lining assembly and the cavity body are connected through the at least two first insulating parts, and the first insulating parts can realize insulating connection between the lining assembly and the cavity body, so that the lining assembly is at a suspension potential, the lining assembly is gradually electrified when bearing bombardment of plasma, and the potential difference between the lining assembly and a target material is reduced; the sparking probability can be reduced, so that the process quality is ensured; in addition, the at least two first insulating parts which are arranged in a scattered mode can reduce the circumferential occupied space, meanwhile, the using amount of insulating materials is reduced, and the cost can be reduced while the weight is reduced.

To provide a new input and output device which is excellent in convenience or reliability.SOLUTION: An input and output device according to the present invention has a first sensor electrode and a second sensor electrode. The device further has a first electrode and a second electrode both of which are electrodes of a display device. The device has a substrate deposed between the first sensor electrode and the second sensor electrode. The second sensor electrode is formed of the same material as that of the first electrode and simultaneously with the first electrode. The input and output device detects change in capacity generated between the first sensor electrode and the second sensor electrode. A third sensor electrode given a stray potential may be provided so as to be overlapped with the first electrode. The input and output device may be used so as to be overlapped with either or both of a liquid crystal device and a light emitting device.SELECTED DRAWING: Figure 1

The application discloses a double-break self-voltage-sharing structure and a vacuum circuit breaker, and belongs to the technical field of high-voltage switch devices. The double-break self-voltage-sharing structure comprises a first vacuum arc-extinguishing chamber and a second vacuum arc-extinguishing chamber, each vacuum arc-extinguishing chamber comprising a static end, a dynamic end and a middle main shielding cylinder with a floating potential in the middle part. Further comprising a first large-curvature circular annular voltage-sharing device, a second large-curvature circular annular voltage-sharing device and a third large-curvature circular annular voltage-sharing device corresponding to the first vacuum arc-extinguishing chamber, and a fourth large-curvature circular annular voltage-sharing device, a fifth large-curvature circular annular voltage-sharing device and a sixth large-curvature circular annular voltage-sharing device corresponding to the second vacuum arc-extinguishing chamber. The application forms a compensation capacitor between adjacent voltage-sharing devices and connects the compensation capacitor in parallel with an internal insulation gap, can effectively weaken the influence of the floating potential component on the ground stray capacitance, realizes uniform distribution of voltage between two breaks and in the internal insulation gap of the break, and significantly improves the insulation performance and stability of the vacuum circuit breaker.

The application provides a MEMS device with electromagnetic shielding function and a manufacturing method thereof. A movable flexible component is arranged on a device layer, the support substrate is coupled to a cover wafer through the movable flexible component, the floating potential of the support substrate is released, the electromagnetic interference of the substrate potential floating on the device layer is inhibited, and the stability of the micro-electro-mechanical system in a complex electromagnetic environment is improved. The manufacturing method comprises the following steps: aligning and bonding one side of the cover wafer with a patterned metal layer to the device layer to define a gas-tight cavity between the cover wafer and the MEMS device, and coupling the support substrate to the cover wafer through the movable flexible component to release the floating potential of the substrate, which is easy to implement.

This invention discloses a floating rail circuit, a half-bridge driving circuit, and a driving method. The floating rail circuit is used to power a gate driver and includes: a first MOSFET, the drain and source of which are connected to a first potential and a floating potential, respectively, and the gate connected to a clamping node; a third resistor R3, electrically connected between the floating potential and the second potential; and a current source, electrically connected between the first potential and the clamping node, wherein the voltage across the current source is a reference voltage V. REF The internal resistance is a first resistor R1; a second resistor R2 and a second MOS transistor are electrically connected between the clamping node and the second node; wherein, the first MOS transistor and the second MOS transistor are both PMOS transistors or NMOS transistors, and the floating rail voltage between the second potential and the floating potential is the power supply voltage of the gate driver. The floating rail circuit of the present invention can provide a constant floating rail voltage that does not change with variations in process, voltage, and temperature.

An output driver includes a first output signal generator that generates based on a first input signal a first output signal to feed it to the control terminal of a first protection element; a second output signal generator that generates based on a second input signal a second output signal to feed it to the control terminal of a second protection element; and a PN junction structure connected between an output terminal and a power terminal. In normal operation, the first output signal is at low level and the second output signal is at low or high level. When the second input signal is at a floating potential, the first input signal can be at a floating potential regardless of the potential at the power terminal.

The invention relates to a cold plasma jet device (1) comprising: - at least one gas supply inlet (2); - at least one tube (4) fluidically connected to the gas supply inlet and comprising at least one plasma outlet (5), the gas supply inlet and the plasma outlet defining a direction of flow of the gas and of the plasma; - at least one high-voltage electrode (6) outside the tube configured to create an electric field in the tube; and - at least one electrically conductive element (7) having a floating electric potential and extending axially inside the tube at least partially between the high-voltage electrode and the plasma outlet.

The present application provides a display panel and a display apparatus. The display panel comprises a substrate, a first metal layer, a light-sensing unit, and a second metal layer. The first metal layer is arranged on the substrate, and comprises a first light shielding part. By means of configuring the first light shielding part to be connected to a constant voltage source, it is ensured that the potential of the first light shielding part is always in a stable state, preventing the potential of the first light shielding part from floating, and avoiding the problem of electrical noise caused by the floating potential of the first light shielding part.

An apparatus is disclosed for a surface-acoustic-wave filter with an electrical conductor having a floating potential. In an example aspect, the apparatus includes a surface-acoustic-wave filter with a piezoelectric layer and an electrode structure disposed on a surface of the piezoelectric layer. The electrode structure includes a first comb-shaped structure and a second comb-shaped structure. The electrode structure also includes at least one electrical conductor positioned between the first comb-shaped structure and the second comb-shaped structure such that a gap separates the at least one electrical conductor from the first comb-shaped structure and the second comb-shaped structure.

To provide a semiconductor device capable of improving reliability of an insulator film and suppressing chip warpage in a compatible manner.SOLUTION: A semiconductor device comprises an emitter electrode, a gate electrode, a drift layer, a source layer, a base layer, a collector electrode and a dummy active trench including on an upper stage an upper-stage electrode which is connected to the gate electrode or the emitter electrode or has a floating potential and on a lower stage a lower-stage electrode which is connected to the gate electrode or the emitter electrode or has a floating potential inside of a trench of a semiconductor substrate. The dummy active trench includes an upper-stage insulator film which is formed on a side face of the upper-stage electrode, a lower-stage insulator film which is formed on a side face of the lower-stage electrode, and a boundary insulator film which is formed between the upper-stage electrode and the lower-stage electrode. A film thickness of the upper-stage insulator film in a lateral direction is larger than a film thickness of the lower-stage insulator film in the lateral direction, and an area of the upper-stage electrode is smaller than an area of the lower-stage electrode in a cross-sectional view.SELECTED DRAWING: Figure 1

The present disclosure provides a display panel and a display device. The display panel includes a substrate, a first metal layer, a photosensitive unit, and a second metal layer. The first metal layer is disposed on the substrate. The first metal layer includes a first light-shielding part. By connecting the first light-shielding part to a constant voltage source, a potential of the first light-shielding part is ensured to be always in a stable state, preventing the potential of the first light-shielding part from floating, and then avoiding an electrical noise problem caused by a floating potential of the first light-shielding part.