Bolometric detector, infrared detecting device using it and associated production process

Abstract

A bolometric detector for electromagnetic radiation comprising a sensitive part or membrane comprising one or more layers of a sensitive material, the resistivity of which varies with temperature; first electric conductor elements in electrical continuity with a readout circuit; second electric conductor elements at a floating potential acting; at least one support area for the sensitive part fulfilling the function of positioning the sensitive part and electric conductor in relation to the readout circuit; at least one thermal isolation structure electrically and mechanically linking each support area to the sensitive part. The conductor elements are distributed as two crossed, superimposed networks of conductive tracks, the first of the two networks comprising all the first conductor elements.

Description

technical field [0001] The invention relates to a bolometric detector and to a device for detecting infrared radiation using the detector. The invention also relates to a method of manufacturing the detector. The invention is particularly applicable to the field of infrared imaging. Background technique [0002] In the field of infrared detectors, devices are known which are arranged in arrays and are able to operate at ambient temperature, ie do not require cooling to extremely low temperatures, in contrast to detection devices called "quantum detectors" Can only work at very low temperatures, typically at the temperature of liquid nitrogen. [0003] These uncooled detectors traditionally use the change in the physical unit of the appropriate material as a function of temperature around 300K. In the case of bolometric detectors, the physical unit is resistivity. [0004] Such uncooled detectors typically include: [0005] - devices that absorb infrared radiation and co...

AI Technical Summary

Problems solved by technology

So its implementation is extremely complex

[0061] Furthermore, the technique defined in this document naturally optimizes the current and thus the low-frequency noise level, since on the one hand the electrodes are placed far apart on two opposite edges of the elementary detector and on the other hand, This particular layout is only applicable to materials with very low resistivity, typically vanadium oxide, otherwise the resistance of the film is too high to obtain a correct drive of the readout circuit, and in practice it cannot be applied to amorphous Silicon and similar materials

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